Method of coating substrate and vapor deposition source arrangement

Abstract

A method of coating a substrate (10) in a vacuum chamber is described. The substrate has a structure formed thereon, the structure comprising a first sidewall (11) adjacent to the pixel region (13) and a first overhang (12) partially projecting from the first sidewall (11) over the pixel region (13). The method comprises: arranging a first vapor deposition source (101) in a first deposition location, the first vapor deposition source having a first vapor distribution conduit (110) having a first row of nozzles (111) having a first main vapor deposition direction (M1); and transporting the substrate (10) through the first vapor deposition source (101) while directing a first material from the first row of nozzles (111) towards the substrate. In the first deposition position, the first main vapor deposition direction (M1) is inclined by a first inclination angle ([alpha] 1) with respect to a surface normal (SN) of the substrate to increase or decrease deposition of the first material below the first overhang (12). A material layer of the OLED layer stack may be deposited on the substrate.

Description

Technical Field

[0001] Embodiments of this disclosure relate to methods and apparatus for coating a substrate with stacked layers. More specifically, embodiments of this disclosure relate to evaporation source arrangements and vacuum deposition systems for depositing materials for OLED layer stacks on a substrate, particularly without using a fine metal mask (FMM) with pixel holes. One or more metal layers and / or one or more organic layers of the OLED layer stack may be subsequently and / or simultaneously deposited on the substrate, for example, by co-deposition. Embodiments of this disclosure specifically relate to evaporation source arrangements and vacuum deposition systems, as well as methods for manufacturing OLED displays by thermal evaporation. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are light-emitting diodes in which the electroluminescent layer is an organic compound film that emits light in response to an electric current. Because OLEDs emit light directly without the need for backlighting or color filters, OLED displays offer a wider color gamut and viewing angle than conventional LCD displays. Furthermore, OLEDs can be fabricated on flexible substrates, making them suitable for a wide variety of applications. OLEDs are used to manufacture television screens, computer monitors, mobile phones, and other handheld devices for displaying information. OLEDs can also be used for general spatial lighting. OLED displays may, for example, include an organic material layer deposited on a substrate between two electrodes in a manner that facilitates the formation of a matrix display panel with individually excitable pixels.

[0003] Organic and metallic materials are deposited on a substrate in a vacuum processing chamber for OLED manufacturing. Metallic materials are used as, for example, electrode materials or electron injection layer (EIL) materials. The materials to be deposited are arranged using a evaporation source, and the evaporated material is deposited onto the substrate through a nozzle. Metallic materials are typically deposited in the evaporation source at temperatures of 1,000°C or higher, or 1,500°C or higher. Organic materials are typically deposited in the evaporation source arrangement at temperatures between 250°C and 500°C.

[0004] Metal and organic vapor depositors can be used to produce organic light-emitting diodes (OLEDs). Other applications utilize vapor depositors to deposit metal or organic layers onto, for example, large-area substrates. For instance, co-deposition of two or more metals or metal alloys can be provided. OLED displays may, for example, include multiple layers of organic material located between two electrodes deposited on a substrate. One of the electrodes may include a transparent conductive layer, such as ITO or other transparent conductive oxide (TCO) materials. The second electrode may include a metal or metal alloy.

[0005] OLED pixels can be deposited onto a substrate using a fine metal mask (IMM), also known as a pixel mask, which has multiple small pixel holes defining individual pixel regions on the substrate. Precise alignment between the IMM and the substrate is necessary for pixel deposition, which is challenging because each of the small pixels includes multiple organic layers that need to be deposited stacked on top of each other on a corresponding anode.

[0006] Another technique for forming OLED pixels on a substrate uses photolithography to pattern the pixels instead of a fine metal mask (IMM). Here, the structure used as a masking layer is formed directly on the substrate before the actual pixel deposition. Alignment issues are reduced. However, rapidly and reliably coating substrates using OLED layer stacking without an IMM requires complex equipment and is also challenging.

[0007] In light of the foregoing, it would be beneficial to provide a method for rapidly and reliably coating substrates with OLED layer stacking, particularly without using fine metal masks (IMMs). Furthermore, improved evaporation source arrangements, vacuum deposition systems, and device fabrication methods suitable for OLED manufacturing would be advantageous. Summary of the Invention

[0008] In view of the foregoing, a method for coating a substrate in a vacuum chamber according to the independent claims is provided, as well as an arrangement of evaporation sources for depositing two or more materials onto the substrate. Other aspects, benefits, and features of this disclosure will be apparent from the claims, description, and drawings.

[0009] According to one embodiment, a method for coating a substrate in a vacuum chamber is provided. The substrate has a structure formed thereon, the structure including a first sidewall adjacent to a pixel region and a first overhang extending from the first sidewall. Coating is performed by an arrangement of vapor deposition sources having a first vapor deposition source, the first vapor deposition source including a first vapor distribution conduit having a first row of nozzles having a first principal vapor deposition direction. The vapor deposition source may optionally have additional vapor distribution conduits, wherein each vapor distribution conduit has a corresponding row of nozzles having a corresponding principal vapor deposition direction. The first vapor deposition conduit, and particularly all vapor deposition conduits of the vapor deposition source, may have a single row of nozzles.

[0010] The method includes: arranging a first vapor deposition source at a first deposition location, and transporting a substrate through the first vapor deposition source arranged at the first deposition location while guiding a first material from a first row of nozzles toward the substrate. At the first deposition location, a first primary vapor deposition direction is tilted at a first tilt angle relative to the surface normal of the substrate to increase or decrease the deposition of the first material below the first overhang.

[0011] In one embodiment, the first primary vapor deposition direction is tilted at a first tilt angle of 10° or greater, particularly 30° or greater, relative to the surface normal of the substrate, to increase material deposition below the first overhang. In other words, the first row of nozzles is tilted "towards" the region below the first overhang to increase deposition below the first overhang, and in particular to coat the substrate with a material layer that contacts the first sidewall.

[0012] In another embodiment, the first primary vapor deposition direction is tilted at a first tilt angle of 10° or greater, particularly 30° or greater, relative to the surface normal of the substrate, to reduce material deposition below the first overhang. In other words, the first row of nozzles is tilted "away" from the area below the first overhang to reduce deposition below the first overhang, and specifically to coat the substrate with a material layer while ensuring that the material layer does not contact the first sidewall.

[0013] The first distribution conduit may include a single row of nozzles, and the single row of nozzles may be tilted relative to the surface normal of the substrate, such that more vapor material enters the region below the overhang compared to a position in the first distribution conduit where the first primary vapor deposition direction is perpendicular to the substrate surface. The first vapor distribution conduit may be substantially vertical, and the first row of nozzles may extend along the length of the first vapor distribution conduit, i.e., in a substantially vertical direction, to provide a vertical source.

[0014] The structure formed on the substrate may include an adjacent pixel defining layer (PDL) structure defining a (sub)pixel region of a device. Sidewalls and inorganic overhangs extending at least partially from the sidewalls over the (sub)pixel region may be disposed on the upper surface of the PDL structure and may serve as a "mask" formed directly on the substrate.

[0015] The first vapor deposition source may optionally be rotatable, for example using a rotary driver, such that the first vapor deposition source can be rotated to a first deposition position in which the nozzle is tilted.

[0016] According to another aspect described herein, a vapor deposition source arrangement for depositing two or more materials onto a substrate having a structure having overhangs formed thereon is provided. The vapor deposition source arrangement includes a first vapor deposition source comprising: a first vapor distribution conduit having a first row of nozzles having a first principal vapor deposition direction for depositing a first material onto the substrate; and a second vapor distribution conduit having a second row of nozzles having a second principal vapor deposition direction for depositing a second material onto the substrate. The vapor deposition source arrangement further includes: a rotary driver for rotating the first vapor deposition source about a rotation axis; and a controller configured to rotate the first vapor deposition source to a first deposition position before transporting the substrate past the first vapor deposition source. At the first deposition position, the first principal vapor deposition direction is tilted at a first tilt angle relative to the surface normal of the substrate to increase or decrease the deposition of the first material below the overhang.

[0017] According to another aspect described herein, a vapor deposition source arrangement for depositing two or more materials onto a substrate is provided. The vapor deposition source arrangement includes a first vapor deposition source having two or more vapor distribution channels, the two or more vapor distribution channels including a first vapor distribution channel having a first row of nozzles for depositing a first material onto the substrate. The two or more vapor distribution channels define a front side of the first vapor deposition source, the front side being directed toward a substrate transport path and arranged opposite a rear side of the first vapor deposition source. At a first deposition position of the first vapor deposition source, the front side of the first vapor deposition source is inclined at a first sub-angle relative to the substrate transport path, and the front surface of the first vapor distribution channel, where the first row of nozzles is disposed, is inclined at a second sub-angle relative to the front side of the first vapor deposition source, wherein the sum of the first sub-angle and the second sub-angle defines a first tilt angle of a first principal vapor deposition direction relative to the surface normal of the substrate.

[0018] Optionally, the vapor deposition source arrangement may further include: a rotary driver for rotating the first vapor deposition source about a rotation axis; and a controller configured to rotate the first vapor deposition source to a first deposition position before transporting the substrate past the first vapor deposition source.

[0019] According to another embodiment, a vacuum deposition system is provided. The vacuum deposition system includes: a vacuum chamber; an arrangement of vapor deposition sources within the vacuum chamber according to any of the embodiments described herein; and a substrate transport system for transporting a substrate along a substrate transport path past a first vapor deposition source for coating the substrate with one or more layers.

[0020] According to another aspect described herein, a vapor deposition source arrangement for depositing two or more materials onto a substrate having a structure having overhangs formed thereon is provided. The vapor deposition source arrangement includes a first vapor deposition source comprising: a first vapor distribution conduit having a first row of nozzles having a first principal vapor deposition direction for depositing a first material onto the substrate; and a second vapor distribution conduit having a second row of nozzles having a second principal vapor deposition direction for depositing a second material onto the substrate. The vapor deposition source arrangement structure includes a shaper shield disposed in front of the first row of nozzles to limit the opening angle of a vapor plume ejected from the first row of nozzles. The shaper shield is configured to shape the vapor plume ejected from the first row of nozzles into an asymmetric shape relative to the first principal vapor deposition direction. Specifically, the shaper shield shapes the vapor plume asymmetrically with respect to the first primary vapor deposition direction, such that, with a horizontal cross-sectional plane, the first half-angle of the vapor plume on the first side of the primary vapor deposition direction facing the first overhang is greater than the second half-angle of the vapor plume on the second side of the primary vapor deposition direction away from the first overhang. Material deposition on the second side of the first primary vapor deposition direction away from the first overhang (i.e., material deposition on the uncovered substrate area) can be reduced relative to material deposition on the first side of the first primary vapor deposition direction (i.e., material deposition in the region below the overhang). The aspect of "asymmetrical shaping of the vapor plume" can be combined with any of the other aspects described herein, particularly with the inclination of the first primary vapor deposition direction relative to the surface normal. Specifically, the substrate can be coated with an inclination and / or asymmetrically shaped vapor plume to increase deposition in the region below the overhang relative to the uncovered surface area.

[0021] The embodiments also relate to apparatus for performing the disclosed methods, and include apparatus parts for performing each described method aspect. The method aspects can be performed by hardware components, a computer programmed with suitable software, by any combination of both, or in any other manner. Furthermore, the embodiments also relate to methods for operating the described apparatus. Methods for operating the described apparatus include method aspects for performing each function of the apparatus. The embodiments also relate to methods for manufacturing processed substrates (particularly coated substrates) in the vacuum deposition system described herein, and substrates manufactured according to the methods described herein and / or using the systems described herein, such as OLED substrates, particularly OLED displays. It is also possible to manufacture other devices besides OLED displays using the apparatus and methods described herein. Attached Figure Description

[0022] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments. The accompanying drawings relate to embodiments of this disclosure and are described below:

[0023] Figure 1 A schematic diagram of a vacuum deposition system with an arrangement of vapor deposition sources according to an embodiment of the present disclosure is shown;

[0024] Figure 2 A schematic diagram of the vapor deposition source arrangement according to an embodiment of the present disclosure is shown in a vertical cross-sectional plane;

[0025] Figure 3 A schematic diagram of the vapor deposition source arrangement according to an embodiment of the present disclosure is shown in a horizontal cross-sectional plane;

[0026] Figure 4A and Figure 4B Two subsequent stages of the method for coating a substrate according to an embodiment are shown;

[0027] Figure 5A and Figure 5B Two subsequent stages of the method for coating a substrate according to an embodiment are shown;

[0028] Figure 6A and Figure 6B Two subsequent stages of the method for coating a substrate according to an embodiment are shown;

[0029] Figure 7 The arrangement of vapor deposition sources in the idle position is shown; and

[0030] Figure 8 A schematic cross-sectional view of a substrate with OLED layer stacks manufactured according to the method of this disclosure is shown. Detailed Implementation

[0031] Reference will now be made in detail to various embodiments, one or more examples of which are shown in each figure. Each example is provided in an illustrative manner and is not intended to be limiting. For example, features shown or described as part of an embodiment may be used on or in combination with any other embodiment to produce yet another embodiment. This disclosure is intended to include such modifications and variations.

[0032] In the following description of the accompanying drawings, the same reference numerals denote the same or similar parts. Generally, only differences with respect to individual embodiments are described. Unless otherwise indicated, the description of parts or aspects of one embodiment may also be applied to corresponding parts or aspects of another embodiment.

[0033] OLED pixels can be formed on a substrate using photolithography and patterning, especially without a fine metal mask (IMM). An IMM has multiple pixel holes and is positioned in front of and aligned relative to the substrate before material deposition. OLED pixel patterning without an IMM is based on a structure formed directly on the substrate, acting as a "mask," before the substrate is coated with multiple materials in a vacuum deposition system. The structure formed on the substrate can include sidewalls adjacent to the pixel region, particularly sidewalls surrounding the pixel region, and overhanging structures that extend at least partially from the sidewalls over the pixel region, such as… Figure 8 As illustrated.

[0034] Figure 8 This is a schematic cross-sectional view showing a portion of an OLED layer stack 760 on a substrate 10 manufactured using OLED pixel patterning technology. An adjacent pixel defining layer (PDL) structure 715 is formed on the upper surface of the substrate 10 defining a pixel region, and an overhang structure 720 is disposed on the upper surface of the PDL structure 715. The overhang structure 720 includes a lower portion 720b having sidewalls and an upper portion 720a having an overhang portion that partially protrudes from the lower portion 720b over the pixel region 13. Figure 8 In the diagram, a first sidewall 11 adjacent to the pixel region 13 is schematically depicted, and a first overhang 12 protrudes partially from the first sidewall 11 above the pixel region 13. As will be understood, the pixel region 13 may be surrounded by two or more sidewalls, and the overhang may be formed on two or more sidewalls and protrude from different sides above the pixel region.

[0035] Individually switchable pixels can be formed on a substrate by depositing various materials onto a defined location beneath the overhang in the pixel region, followed by subsequent etching / patterning. Depositing metal and organic layers in the designated area, particularly beneath the overhang, is challenging.

[0036] The lower portion 720b having the first sidewall 11 may be made of a conductive material intended to contact the cathode layer 711 of the OLED layer stack 760 and allow the cathode layer 711 to be connected to a cathode potential. Alternatively or additionally, at least a portion of the first sidewall 11 may include an auxiliary cathode 716 intended to contact the cathode layer 711 of the OLED layer stack. The upper portion 720a having the overhang 12 may be made of a non-conductive inorganic material, or alternatively, a conductive inorganic material.

[0037] The OLED layer stack 760 typically includes an anode layer 714, an optional hole injection layer HIL 718, at least one organic layer 713 (made of one or more optically active organic materials), an optional electron injection layer EIL 712, a cathode layer 711, and at least one encapsulation layer 710.

[0038] like Figure 8 As shown, at least one organic layer 713 does not contact the first sidewall 11, but the cathode layer 711 contacts the first sidewall 11 below the first overhang 12. To ensure that at least one organic layer 713 substantially does not contact the first sidewall 11 below the first overhang, at least one organic layer 713 may be deposited with an organic vapor plume 732 having a small opening angle. To ensure that the cathode layer 711 reliably contacts the first sidewall 11 below the overhang, the cathode layer may be deposited with a metal vapor plume 731 having a large opening angle. However, a vapor plume with a large opening angle may not always be beneficial, for example, because a vapor plume with a large opening angle causes a significant shading effect, which leads to stray coating in areas of the deposition system and areas of the substrate that should not be coated.

[0039] In view of the above, methods and apparatus are described herein, based on embodiments, to allow OLED layer stacks to be reliably deposited on a substrate, particularly on a substrate having overhang structures thereon. For example, the methods described herein can ensure or improve electrical contact between the cathode layer and the conductive sidewall below the overhang, and / or reduce or prevent contact between the organic layer and the conductive sidewall below the overhang. Contact between the organic layer and the conductive sidewall reduces contact and increases the contact resistance between the cathode layer (deposited above the organic layer) and the conductive sidewall. Low contact resistance between the cathode layer and the conductive sidewall is advantageous, for example, to reduce or prevent the impact on the IV curve of the manufactured OLED device.

[0040] Figure 1 A schematic top view illustrates a vacuum deposition system 1000 having an evaporation source arrangement 100 according to an embodiment described herein. The vacuum deposition system 1000 includes a first vacuum chamber 1001 housing a first evaporation source 101, and one or more additional vacuum chambers optionally housing one or more additional evaporation sources (e.g., a second evaporation source 102 and / or a third evaporation source 103). The evaporation sources may be configured to coat a vertically or substantially vertically oriented substrate transported via a substrate transport track 1013. Multiple materials, including one or more metals and one or more organic materials, may be sequentially deposited onto the substrate to provide layer stacks, such as OLED layer stacks. For example, the vacuum deposition system 1000 may include 10 or more evaporation sources for coating the substrate in multiple layers.

[0041] In this disclosure, "vacuum deposition system" should be understood as a system or arrangement configured for vacuum deposition of material on a substrate. A vacuum chamber or "vacuum processing chamber" should be understood as a chamber configured for vacuum deposition. The term "vacuum" as used herein can be understood as a technical vacuum with a vacuum pressure less than, for example, 10 mbar. Typically, the pressure in a vacuum chamber as described herein can be 10 mbar. -5 millibars and about 10 -8 Between millibars, especially at 10 -5 millibars and 10 -7 Between milligrams.

[0042] The vacuum deposition system 1000 may include a substrate transport track 1013 configured to move a substrate 10 along a substrate transport path T past a first vapor deposition source 101 and optionally past another vapor deposition source. The substrate transport track 1013 may extend at least partially through the first vacuum chamber 1001 and through an optional additional vacuum chamber, and may include a substrate transport system configured for substrate transport, such as a roller transport system, one or more linear motors, and / or a magnetic levitation system adapted to move the substrate relative to and past the vapor deposition sources. During transport and / or deposition, the substrate may be carried by a substrate carrier 1020.

[0043] The vacuum deposition system 1000 may further include a shielding transport track 1012 extending between a substrate transport track 1013 and a first evaporation source 101 in a first vacuum chamber 1001. The shielding transport track 1012 is configured to move a movable shield 1030 in front of the substrate 10 to shield one or more edge regions of the substrate 10 and / or to shield at least a portion of the substrate carrier 1020 supporting the substrate 10. The movable shield 1030 may be a movable edge exclusion shield having a shielding frame for covering one or more edge regions of the substrate. The shielding transport track 1012 may be located between the substrate transport track 1013 and the first evaporation source 101 in the first vacuum chamber 1001 and may include a shielding transport system, such as a roller transport system, one or more linear motors and / or a magnetic levitation system, adapted to move the movable shield 1030 in front of the substrate 10 such that one or more edge regions of the substrate are covered during coating with the first evaporation source 101. Figure 1 As shown schematically in the diagram.

[0044] The movable shielding component 1030 can move back and forth on the shielding component transport track 1012, such as... Figure 1The corresponding arrows schematically indicate that during coating with the first vapor deposition source 101, subsequent substrates moving along the substrate transport path T can be shielded by the movable shield 1030. Each vapor deposition source may have an associated movable shield that can move back and forth on a corresponding shield transport track to prevent edge regions of the substrate from being coated as the substrate moves past the corresponding vapor deposition source.

[0045] Therefore, an online system is provided that allows for the continuous deposition of multiple layers on a substrate while the substrate moves through multiple evaporation sources via a vacuum deposition system 1000.

[0046] The embodiments described herein specifically relate to material deposition, such as for display fabrication on large-area substrates. According to some embodiments, the large-area substrate or substrate carrier supporting one or more substrates may have a diameter of 0.5 m. 2 Or larger sizes, especially 1m 2 Or even larger sizes. For example, the deposition system can be adapted to process large-area substrates, such as 4.5 generation substrates, which correspond to approximately 0.67 μm. 2 The substrate (0.73m × 0.92m), a fifth-generation substrate, corresponds to approximately 1.4m. 2 (1.1m × 1.3m), 6th generation substrate, which corresponds to approximately 2.7m. 2 (1.5m × approx. 1.8m), 7.5th generation substrate, corresponding to approximately 4.29m. 2 (1.95m × 2.2m), Generation 8.5 substrate, corresponding to approximately 5.7m. 2 (2.2m × 2.5m), or even a 10th generation substrate. This corresponds to approximately 8.7m. 2 (2.85m × 3.05m). Even larger generations (such as 11th and 12th generations) and corresponding substrate areas can be achieved. According to a further embodiment, half the size of the aforementioned substrate generations can be processed. Alternatively or additionally, semiconductor wafers can be processed and coated in a deposition system according to this disclosure.

[0047] Figure 2A vapor deposition source arrangement 100 according to an embodiment described herein is shown in more detail with a vertical cross-sectional plane. In this disclosure, "vapor deposition source apparatus" should be understood as an arrangement configured for material deposition by vapor deposition on a substrate. The vapor deposition source arrangement 100 may have one or more crucibles 112 and one or more vapor distribution conduits 110 configured to vapor deposit a source material, and the one or more vapor distribution conduits 110 configured to guide the vapor-deposited material toward the substrate through a plurality of nozzles. For example, a vapor distribution conduit or vapor distribution conduit may provide a line source with a plurality of nozzles arranged in a row (or "line array") one above the other along the longitudinal direction of the vapor distribution conduit. The nozzle rows may be arranged along the longitudinal direction of the vapor distribution conduit (generally a substantially vertical direction) to provide a substantially vertical line source. Each vapor distribution conduit typically has a single row of nozzles, particularly a single vertical nozzle row adapted to coat the substrate in a substantially vertical orientation. As used herein, "substantially vertical direction" refers to a direction corresponding to or deviating from the direction of gravity by less than 10°.

[0048] For example, the source material to be deposited can be an inorganic material, especially a metallic material used as an electrode material or an electron transport layer material in OLED layer stacking, or the source material can be an organic material used in the production of organic light-emitting diodes (OLEDs).

[0049] like Figure 2 As schematically shown, the vapor deposition source arrangement 100 includes a first vapor deposition source 101 having at least a first vapor distribution conduit 110. Further vapor distribution conduits for the first vapor deposition source are not included. Figure 2 As shown, but may exist (see example). Figure 3 The diagram illustrates a vapor deposition source having three vapor distribution channels. The first vapor distribution channel 110 has a row of nozzles 111 arranged along the longitudinal direction of the first vapor distribution channel 110, for example, in a substantially vertical linear array above each other. The first vapor deposition source can be, for example, a line source for coating a substrate in a substantially vertical orientation. The first vapor deposition source 101 can be configured to deposit one or more materials onto a substrate using one or more vapor distribution channels arranged adjacent to each other, and other vapor deposition sources can be configured to deposit one or more materials onto a substrate.

[0050] The first row of nozzles 111 includes multiple nozzles, particularly twenty or more. Each nozzle has a primary vapor deposition direction. The "primary vapor deposition direction" of a nozzle can be understood as the direction defined by the nozzle channel and the nozzle opening (typically corresponding to the longitudinal direction of the nozzle channel). Typically, the generally conical vapor plume emitted by the nozzle is centered on the primary vapor deposition direction of the nozzle; for example, the most vapor particles in the plume propagate along the primary vapor deposition direction. Specifically, the vapor plume emitted by the nozzle is defined by the primary vapor deposition direction and the opening angle of the plume.

[0051] The vapor plume can be rotationally symmetrical relative to the primary vapor deposition direction, and / or the vapor plume can be shaped by one or more shaper shields 201 to be symmetrical or asymmetrical relative to the primary vapor deposition direction (=relative to the nozzle axis). Figure 3 The diagram schematically illustrates the shaping of a vapor plume ejected by the first row of nozzles 111, wherein the shaper shield 201 is asymmetrical relative to the first primary vapor deposition direction (in the horizontal cross-sectional plane).

[0052] If the nozzle channels of the nozzles in the first row are substantially parallel to each other, then the nozzles in the first row have a corresponding first principal vapor deposition direction relative to the substrate surface. Figure 2 The diagram schematically depicts a parallel vapor plume propagating in the first primary vapor deposition direction M1. Therefore, the first row of nozzles is characterized by the (common) primary vapor deposition direction of the nozzles. For example, Figure 2 The first row of nozzles 111 has a first primary vapor deposition direction M1. The other rows of nozzles described herein are defined by corresponding primary vapor deposition directions, which are common among the respective rows of nozzles. Each vapor deposition pipe typically has one row of nozzles.

[0053] Depending on the opening angle of the emitted vapor plume, some vapor material propagates into the area below the overhang. However, depending on the size of the overhang, it can be difficult to provide reliable contact between the vapor-deposited material and the first sidewall below the overhang. Furthermore, vapor plumes with large opening angles can be difficult to handle due to their lack of directionality and shading effects in all directions.

[0054] The vapor deposition source arrangement 100 may further include a rotary driver 113 for rotating the first vapor deposition source 101 about a rotation axis, and a controller 114 for controlling the rotational motion of the first vapor deposition source 101.

[0055] Figure 3A schematic diagram of a vapor deposition source arrangement 100 having a first vapor deposition source 101 according to an embodiment described herein is shown in a horizontal cross-sectional plane. The first vapor deposition source 101 includes a first vapor distribution conduit 110 having a first row of nozzles 111 having a first primary vapor deposition direction M1. The vapor plumes of the first row of nozzles may be substantially parallel to each other, for example, one above the other.

[0056] A first vapor deposition source 101 is arranged at a first deposition position, specifically by rotating the first vapor deposition source 101 about a rotation axis R1 to the first deposition position using a rotary driver. At the first deposition position, the first principal vapor deposition direction M1 of the nozzles of the first row of nozzles 111 is inclined at a first tilt angle α1 relative to the surface normal Sn of the substrate, to increase or decrease the deposition of the first material below the first overhang 12. In some embodiments, the nozzle channels of the first row are not perpendicular to the substrate surface. The substrate 10 is transported past the first vapor deposition source 101 at the first deposition position, while the first material is guided from the first row of nozzles 111 toward the substrate.

[0057] In some embodiments, the first tilt angle α1 is 15° or greater relative to the surface normal, particularly 30° or greater, or even 45° or greater.

[0058] In some embodiments, a first primary evaporation direction M1 is tilted "towards" the first overhang 12 compared to a primary evaporation direction perpendicular to the substrate surface, to increase the deposition of the first material in the region below the first overhang 12. Specifically, the first material may be a metal, particularly silver, and at the first deposition location, the first primary evaporation direction M1 is tilted to increase the contact area between the metal and the first sidewall below the first overhang. Using the first vapor distribution conduit 110, a cathode layer having improved electrical contact with the first sidewall 11 can be deposited.

[0059] In some embodiments, the first opening angle (α) of the first vapor plume ejected by the first row of nozzles may be 40° or greater and 120° or less. The combination of the large opening angle (α) of the vapor plume and the first tilt angle (α1) results in increased material deposition below the overhang and reliably ensures electrical contact between the deposited first material and the first sidewall 11. Given the first tilt angle (α1) of the first primary vapor deposition direction relative to the surface normal as described herein, a large first opening angle (α) that results in a substantial shading effect in all directions may not be necessary. For example, in some embodiments, the first tilt angle (α1) may be 25° or greater, and the first opening angle (α) may be between 40° and 80°, thereby ensuring that the material deposition below the overhang has a tilt angle of, for example, 65° relative to the surface normal for the outermost vapor particles of the vapor plume.

[0060] In the various embodiments described herein, which can be combined with other embodiments described herein, the shaper shield 201 is arranged in front of the first row of nozzles 111 to limit the opening angle of the vapor plume ejected by the first row of nozzles. The shaper shield 201 may limit the opening angle of the vapor plume on (only) one side of the first primary evaporation direction M1 or on both opposite sides of the first primary evaporation direction M1, such as... Figure 3 The diagram is schematically depicted. For example, the shaper shield 201 may include a substantially vertical slit opening adapted to restrict vapor plumes on two opposing horizontal sides of a first principal vapor deposition direction M1.

[0061] In some embodiments, the shaper shield 201 is configured to shape the vapor plume asymmetrically relative to the first primary evaporation direction M1. In other words, the first sub-angle of the vapor plume on the first side of the primary evaporation direction M1 may be greater than the second sub-angle of the vapor plume on the second side of the primary evaporation direction M1, such as... Figure 3 The following is schematically depicted. Thus, the deposition below the first overhang can be increased relative to the deposition in the uncovered area of ​​the substrate. More specifically, the ratio between the first deposition amount in the region below the first overhang and the second deposition amount on the uncovered area of ​​the substrate can be increased. Or, to express it differently: the thickness of the deposited material below the first overhang can be increased relative to the thickness of the deposited material on the uncovered substrate area by asymmetrically shaping the vapor plume with a shaper shield. Furthermore, a vapor plume with better focus and / or better directionality can be provided. In particular, the shaper shield 201 described herein ensures that the opening angle of the vapor plume emitted by the first row of nozzles is adapted to provide a suitable ratio between the thickness of the deposited layer in the region below the first overhang and in the uncovered area of ​​the substrate. Optionally, the shaper shield described herein with respect to the first row of nozzles can also be arranged in front of the second row of nozzles and / or the third row of nozzles.

[0062] In some embodiments, the first principal evaporation direction M1 is tilted "away" from the first overhang 12 compared to the principal evaporation direction perpendicular to the surface normal SN, in order to reduce the deposition of the first material below the first overhang 12 (see [link]). Figure 6ASpecifically, the first material may be an organic material, and at the first deposition location, the first primary vapor deposition direction M1 is inclined to reduce or prevent contact between the organic material and the first sidewall below the first overhang. Alternatively or additionally, a shaper shield 201 may be arranged in front of the first row of nozzles and may be configured to restrict the vapor plume ejected by the first row of nozzles to reduce or limit the deposition of organic material below the first overhang. In particular, the organic vapor plume may be symmetrically or asymmetrically shaped by the shaper shield 201 to limit the deposition of organic material below the first overhang to a first degree. The first range may be smaller than the second range reached by the subsequently deposited metal layer below the first overhang. Using the first vapor distribution conduit 110, an organic layer can be deposited in the region that hardly reaches below the overhang. A thin organic layer in the region below the overhang can promote electrical contact between the overlying cathode layer and the sidewall because if the underlying organic layer is thin or not present below the overhang, there is more space below the overhang for the vaporized metal to reach the sidewall.

[0063] As described herein, the vapor deposition source arrangement 100 includes a first vapor deposition source 101 having two or more vapor distribution channels. The first vapor distribution channel 110 has a first row of nozzles 111 having a first principal vapor deposition direction M1 for depositing a first material on a substrate, and the second vapor distribution channel 120 has a second row of nozzles 121 having a second principal vapor deposition direction for depositing a second material on a substrate.

[0064] The vapor deposition source arrangement 100 may further include a rotary driver 113 and a controller 114. The rotary driver is used to rotate the first vapor deposition source about a rotation axis R1, and the controller is configured to rotate the first vapor deposition source to a first deposition position before transporting the substrate 10 past the first vapor deposition source. At the first deposition position, the first primary vapor deposition direction is tilted by a first tilt angle (α1) relative to the surface normal of the substrate to increase or decrease the deposition of the first material below the overhang.

[0065] The controller 114 can be configured to position the first evaporation source at a first deposition location and maintain the first evaporation source at the first deposition location during transport of the substrate 10 past the first evaporation source to deposit one or more layers on the substrate. After transporting the substrate past the first evaporation source, the controller can cause the first evaporation source to move (e.g., rotate) to another location, such as to... Figure 7 The empty space shown.

[0066] When the first vapor deposition source is positioned at the first deposition location, angled deposition of one or more materials on the substrate ensures increased or decreased material deposition in the region below the overhang, which can be beneficial for the deposition of OLED layer stacks. Specifically, the cathode layer can be deposited via angled deposition below the overhang, thereby ensuring good electrical contact between the cathode material and the first sidewall 11. Furthermore, an organic layer can be deposited via angled deposition to reduce or prevent contact between the organic layer and the first sidewall 11 below the overhang.

[0067] like Figure 3 As shown, two or more vapor distribution channels of the first vapor deposition source define a front side 60 of the first vapor deposition source. The front side of the vapor deposition source refers to the side of the vapor deposition source that includes multiple rows of nozzles and is arranged opposite to the rear side 61 of the vapor deposition source. During material deposition on the substrate, the front side 60 faces the substrate. If the vapor deposition source is rotatable (see...), Figure 3 If the front side 60 of the first vapor deposition source is defined, for example, as a line intersecting the first row of nozzles 111 and extending tangentially along the rotation trajectory of the first row of nozzles 111. Alternatively, the front side 60 of the vapor deposition source may be defined as extending along a connecting line that connects the geometric centers of two or more vapor distribution channels of the vapor deposition source in a horizontal cross-sectional plane.

[0068] According to the aspects described herein, at the first deposition location, the front side 60 of the first vapor deposition source is inclined at a first sub-angle x1 relative to the substrate transport path T, and the front surface of the first vapor distribution pipe 110, which is provided with the first row of nozzles 111, is inclined at a second sub-angle x2 relative to the front side 60 of the first vapor deposition source. The sum of the first sub-angle x1 and the second sub-angle x2 defines a first tilt angle α1 of the first primary vapor deposition direction M1 relative to the surface normal SN of the substrate.

[0069] Specifically, the first sub-angle x1 can be 10° or greater, particularly 15° or greater, and the second sub-angle x2 can be 15° or greater, particularly 25° or greater. Therefore, the first tilt angle α1 of the first principal vapor deposition direction M1 relative to the surface normal can be 25° or greater, particularly 40° or greater.

[0070] In other words, the first tilt angle α1 of the first primary vapor deposition direction M1 relative to the surface normal can be based on two contributing factors: (1) the tilt of the first row of nozzles 111 relative to the front side 60 (i.e., the nozzle channel is not perpendicular to the front side 60), and (2) the tilt of the front side 60 of the entire vapor deposition source relative to the previous deposition position, wherein the front side 60 is parallel to the substrate transport path T. The first contributing factor can be obtained and adjusted by rotating the first vapor deposition source about the axis of rotation to the tilted position, and the first contributing factor can be obtained and adjusted, for example, by the specific geometry and / or arrangement of the front surface of the first vapor distribution pipe and / or the first row of nozzles, such that the nozzle channel of the first row of nozzles is tilted relative to the front side 60 (i.e., not perpendicular).

[0071] The two factors mentioned above that affect the first tilt angle α1 can increase the total tilt of the first primary evaporation direction M1 relative to the surface normal SN, thereby further increasing or decreasing deposition below the overhang, depending on the material or layer to be deposited. Furthermore, the primary evaporation directions of several nozzle rows can be tilted uniformly (e.g., via source rotation) and tilted relative to each other (e.g., by tilting the nozzle rows 60 degrees relative to the front side of the evaporation source), which increases flexibility and allows for the deposition of a specific layer onto the substrate using a single evaporation source. This improves deposition rate and deposition flexibility.

[0072] In some embodiments that can be combined with other embodiments described herein, the first vapor deposition source 101 has a second vapor distribution conduit 120, the second vapor distribution conduit having a second row of nozzles 121, the second row of nozzles having a second principal vapor deposition direction M2. The second principal vapor deposition direction M2 and the first principal vapor deposition direction M1 may be inclined toward each other to achieve co-deposition of a mixed material layer on the substrate at the first deposition location. In particular, the first row of nozzles 111 and the second row of nozzles 121 may be mounted such that the first principal vapor deposition direction and the second principal vapor deposition direction are close to each other, such as... Figure 3 As shown. Specifically, the first vapor plume ejected by the first row of nozzles and the second vapor plume ejected by the second row of nozzles can overlap during propagation to achieve co-deposition of the two materials for forming a hybrid material layer on the substrate.

[0073] In some embodiments, during the passage of the transport substrate 10 through the first vapor deposition source 101, a mixed material layer (particularly a mixed metal layer or another mixed inorganic layer) is co-deposited onto the substrate using a first vapor distribution channel and a second vapor distribution channel. Alternatively, a mixed organic layer comprising at least two different organic materials is co-deposited onto the substrate, wherein the first row of nozzles and the second row of nozzles are inclined toward each other.

[0074] The hybrid metal layer can be the cathode layer of the OLED layer stack, especially a cathode layer containing co-deposited silver and magnesium.

[0075] At the first deposition location, the second primary evaporation direction M2 may be tilted relative to the surface normal of the substrate by a second tilt angle, which has a smaller (absolute) value than the first tilt angle α1. The first and second tilt angles have the same sign relative to the surface normal to increase material deposition below the first overhang. Specifically, both the first and second primary evaporation directions may be tilted "towards" the first overhang 12, so that the second material is also deposited below the first overhang 12 via tilted deposition. The first primary evaporation direction M1 may be tilted more strongly than the second evaporation direction (see [reference needed] for this). Figure 4A Therefore, by using two rows of nozzles inclined relative to each other and relative to the substrate normal, the deposition and co-deposition of the mixed material layer below the first overhang 12 can be simultaneously increased. In some embodiments, the first material may be silver and / or the second material may be another metal, such as magnesium, which is co-deposited to provide a mixed cathode layer. Good electrical contact between the silver material of the cathode layer and the first sidewall 11 is particularly beneficial.

[0076] In some embodiments that can be combined with other embodiments described herein, the first vapor deposition source 101 has a third vapor distribution conduit 130 having a third row of nozzles having a third principal vapor deposition direction. Optionally, the third principal vapor deposition direction and the first principal vapor deposition direction are inclined away from each other so as to enable the sequential deposition of two layers stacked on top of each other on the substrate at the first deposition location. In other words, the first row of nozzles and the third row of nozzles can be configured such that the first vapor plume ejected by the first row of nozzles and the third vapor plume ejected by the third row of nozzles do not overlap during propagation toward the substrate, such that individual layers can be deposited on top of each other using the first (and optionally second) and third vapor distribution conduits.

[0077] Specifically, during substrate transport through the first vapor deposition source, the electron injection layer (EIL) can be deposited onto the substrate using the third vapor distribution channel 130, and the cathode layer can be deposited above the electron injection layer via co-deposition using at least the first vapor distribution channel 110 (particularly using the first and second vapor distribution channels). Specifically, the co-deposited cathode layer can be deposited on top of the electron injection layer, wherein the co-deposited cathode layer is deposited using the first and second vapor distribution channels, and the electron injection layer is deposited using the third vapor distribution channel.

[0078] In another embodiment, the third primary evaporation direction of the third row of nozzles may be tilted toward the first and second primary evaporation directions to achieve co-deposition of a mixed layer comprising at least three different materials (e.g., Figure 6A (As shown).

[0079] In some embodiments that can be combined with other embodiments described herein, the first vapor deposition source can be rotated to an idle position, in which the first row of nozzles in the first vapor distribution conduit is directed toward the idle shield 202. In the idle position, optional second and third rows of nozzles also point toward the idle shield 202. The first vapor deposition source 101 can be positioned on the idle shield 202 (… Figure 7 (as shown) and the first deposition location ( Figure 3 The first evaporation source 101 can rotate between the two locations shown in the diagram. When no substrate is being transported along the substrate transport path T past the first evaporation source, the first evaporation source 101 can be positioned in an idle position. When the substrate is being transported past the first evaporation source, the first evaporation source can rotate from the idle position to the deposition position, for example, rotate to... Figure 3 The first deposition location shown or rotated to Figure 5B The second deposition location is shown in the diagram.

[0080] In some embodiments, the idle shield 202 partially surrounds the first vapor deposition source, for example at an angle of 90° or greater and 270° or less, such as in a cylindrical manner. In the idle position (e.g. Figure 7 As shown), the front side 60 of the vapor deposition source faces the idle shield 202.

[0081] Figure 4A and Figure 4B Two subsequent stages of a method for arranging a coated substrate using a vapor deposition source according to embodiments described herein are shown. Figure 4A This illustrates the first deposition location during material deposition onto substrate 10. Figure 3 The first vapor deposition source 101. The first main vapor deposition M1 is tilted at a first tilt angle relative to the surface normal SN of the substrate to increase the deposition of the first material below the first overhang 12. A metal layer (especially a cathode layer) can be deposited onto the pixel region 13, ensuring good electrical contact between the metal layer and the first sidewall 11 below the first overhang 12. Figure 4A The first vapor deposition source may include Figure 3 Some or all of the characteristics of the first vapor deposition source are described above and will not be repeated here.

[0082] In some embodiments, the structure formed on the substrate 10 further includes a second sidewall 11' adjacent to the pixel region 13 on the side opposite to the first sidewall 11, and a second overhang 12' extending partially above the pixel region 13 from the second sidewall 11'. The first overhang 12 and the second overhang 12' may protrude partially above the pixel region 13 from opposite directions.

[0083] In some embodiments, it is sufficient to ensure reliable electrical contact between the cathode layer and the first sidewall 11 on at least one side of the pixel region 13. Therefore, the cathode layer can be deposited via angled deposition, as described herein, thereby ensuring an improved contact area between the cathode layer and the first sidewall 11 on at least one side of the pixel region 13. Contact between the cathode layer and the second sidewall 11' on the opposite side of the pixel region 13 may be worse, or even nonexistent, because during material deposition, the first principal evaporation direction M1 is tilted "away" from the area below the second overhang 12' when the first principal evaporation direction M1 is tilted "towards" the area below the second overhang 12' (see [link to other documentation]). Figure 4A However, good cathode contact on the first side of the pixel area may be acceptable for some applications.

[0084] In other embodiments, reliable electrical contact is provided between the cathode layer and the sidewall below the overhang on different sides of the pixel region 13, particularly on two opposite sides. Specifically, during the transport of the substrate through the first evaporation source 101 ( Figure 4A After (as shown in the diagram), the substrate can be transported through the second evaporation source 102 ( Figure 4B As shown in the diagram, a second portion of the cathode layer is deposited on the substrate, which electrically contacts the second sidewall 11' below the second overhang 12'. For example, the second vapor deposition source 102 may be arranged downstream of the first vapor deposition source 101 along the substrate transport path T, such as... Figure 1 As shown.

[0085] A second vapor deposition source 102 is arranged at a second deposition position and has an additional first vapor distribution channel 110' with an additional first row of nozzles 111' having an additional first principal vapor deposition direction M1'. For example, before the substrate 10 is transported along the substrate transport path T past the second vapor deposition source 102, the second vapor deposition source 102 can be rotated about a rotation axis to the second deposition position using a rotary driver. During substrate transport past the second vapor deposition source 102, a first material (particularly the metal of the cathode layer, and more particularly silver) is guided from the additional first row of nozzles 111' toward the substrate. At the second deposition position, the additional first principal vapor deposition direction M1' of the additional first row of nozzles 111' is inclined at an additional first tilt angle α1' relative to the surface normal of the substrate, and the first tilt angle α1 and the additional first tilt angle α1' have opposite signs relative to the surface normal. In other words, the first principal vapor deposition direction and the additional first principal vapor deposition direction are inclined in opposite directions relative to the surface normal of the substrate. When the nozzle channel of the additional first row nozzle 111' is tilted relative to the surface normal of the substrate to increase deposition below the second overhang 12', good electrical contact between the deposited layer and the second sidewall 11' can also be ensured on the opposite side of the pixel region 13.

[0086] Therefore, the first tilt angle α1 of the first row of nozzles increases the deposition of the first material below the first overhang 12, and the additional first tilt angle α1' of the other first row of nozzles increases the deposition of the first material below the second overhang 12'. If the first material is a metal of the cathode layer, good electrical contact between the cathode layer and the sidewalls surrounding the pixel region can be ensured on both opposite sides of the pixel region 13. In particular, the first vapor deposition source 101 can coat the substrate with a first sublayer of the cathode layer, and the second vapor deposition source 102 can coat the substrate with a second sublayer of the cathode layer, wherein the first and second sublayers comprise corresponding materials, particularly metals.

[0087] In some embodiments, the absolute value of the first tilt angle α1 of the first row of nozzles 111 may substantially correspond to the absolute value of another first tilt angle α1' of the other first row of nozzles 111'. Therefore, equally large contact areas and / or equally good electrical contacts between the cathode layer and the sidewalls can be ensured on opposite sides of the pixel region 13. For example, tilt angles α1 and α1' may be 10° or greater, particularly 30° or greater, and the opening angle α of each vapor plume may be 40° or greater, particularly 60° or greater.

[0088] In some embodiments, the first vapor deposition source 101 coats the substrate with a co-deposition mixed material layer from the first and second vapor distribution channels, and / or the second vapor deposition source 102 coats the substrate with a co-deposition mixed material layer from another first vapor distribution channel 110' and another second vapor distribution channel 120' of the second vapor deposition source 102. The mixed material layer may be a mixed metal layer, particularly a mixed metal cathode layer of OLED layer stacks, and more particularly a mixed metal cathode layer comprising silver and magnesium. Compared to a nozzle for magnesium deposition, a nozzle for silver deposition may be more strongly tilted relative to the surface normal, thereby ensuring reliable contact between the silver material and the different sidewalls surrounding the pixel region 13.

[0089] The deposited material may include one or more organic materials or one or more inorganic materials, particularly one or more metals. For example, a first vapor deposition source as described herein may coat a substrate with one or more organic or inorganic materials, and a subsequent or prior vapor deposition source as described herein may coat a substrate with one or more inorganic materials (particularly metals).

[0090] Optionally, the first vapor deposition source 101 may include a third vapor distribution conduit 130 configured to deposit another layer on the substrate prior to depositing the cathode layer. The additional layer may be an electron injection layer and / or may include a metal, particularly ytterbium.

[0091] In some embodiments that can be combined with other embodiments described herein, a shaper shield 201 is provided for reducing or preventing overlap of a vapor plume ejected from the first row of nozzles 111 of the first vapor distribution conduit 110 with a vapor plume ejected from the third row of nozzles 131 of the third vapor distribution conduit 130 at a first deposition location. The shaper shield 201 may be mounted at the first vapor deposition source so that it can rotate with the first vapor deposition source. Alternatively, the shaper shield 201 may be configured as part of a (fixed) shielding arrangement including the shaper shield 201 and the idler shield 202. The shielding arrangement including the shaper shield 201 and the idler shield 202 partially surrounds the first vapor deposition source 101. The rotational movement of the shielding arrangement relative to the first vapor deposition source may be stationary. In other words, the vapor deposition source may be rotated about a rotation axis relative to the shielding arrangement using a rotary actuator (see...). Figure 7 ).

[0092] Figure 5A and Figure 5B Two subsequent stages of an alternative method for coating a substrate using an arrangement of vapor deposition sources, according to embodiments described herein, are shown. Figure 5A The first stage shown corresponds to Figure 4A The stages shown are described above and will not be repeated here. The area below the first overhang 12 is coated by angled deposition as described herein, particularly by coating with a cathode layer stacked with OLED layers, to improve the contact between the cathode layer and the sidewall below the overhang.

[0093] Replacement Figure 4B The second evaporation source 102 is used to deposit the second sub-layer of the cathode layer. The first evaporation source 101 can also be used to deposit the second sub-layer of the cathode layer, while ensuring good electrical contact between the cathode layer and the second sidewall 11' on the side of the pixel region 13 opposite to the first sidewall 11.

[0094] exist Figure 5B In the second stage shown, the first vapor deposition source 101 is rotated to a second deposition position, in which the first principal vapor deposition direction M1 of the first row of nozzles 111 is tilted relative to the surface normal of the substrate at a modified first tilt angle α1″ relative to the surface normal of the substrate, the first tilt angle and the modified first tilt angle having opposite signs relative to the surface normal of the substrate. The substrate moves again past the first vapor deposition source, particularly in the return direction R, while the first material is guided from the first row of nozzles toward the substrate. Specifically, the substrate may be transported past the first vapor deposition source twice, for example, in opposite directions, wherein the first row of nozzles is first tilted toward the region below the first overhang 12 and then toward the region below the second overhang 12'.

[0095] The first tilt angle α1 can be adapted to increase the deposition of the first material below the first overhang 12, and the modified first tilt angle α1” can be adapted to increase the deposition of the first material below the second overhang 12'. Specifically, the first tilt angle α1 and the modified first tilt angle α1” may have opposite signs relative to the surface normal of the substrate, but the absolute value of the first tilt angle α1 at the first deposition location may optionally substantially correspond to the absolute value of the modified first tilt angle α1” at the second deposition location. Therefore, equally large contact areas between the cathode layer and the sidewalls can be ensured on opposite sides of the pixel region 13. Similar to... Figure 4A and 4B The method shown deposits a layer, particularly a cathode layer, on the substrate by moving the substrate twice past a first evaporation source arranged at different deposition locations, which contacts the sidewalls on the opposite side of the pixel region.

[0096] In some embodiments, the first vapor deposition source 101 coats the substrate at a first deposition location with a first sublayer of the mixed material layer from the first and second vapor distribution channels, and / or the first vapor deposition source 101 coats the substrate at a second deposition location with a second sublayer of the mixed material layer from the first and second vapor distribution channels. The mixed material layer may be a mixed metal layer, particularly a mixed metal cathode layer of OLED layer stack, and more particularly a mixed metal cathode layer comprising silver and magnesium.

[0097] Figure 5A and 5B The coating method shown uses only one vapor deposition source to deposit a layer that reliably reaches the overhang on the opposite side of the pixel region. However, compared to Figure 4A and 4B Compared to the method shown, the substrate moving twice in opposite directions past the first evaporation source complicates the substrate transport sequence and reduces the deposition flexibility of the vacuum deposition system. On the other hand, Figure 4A and 4B The coating method shown uses two vapor deposition sources to deposit a layer that reliably reaches the overhang on opposite sides of the pixel region. The substrate can be moved continuously through the two vapor deposition sources, thereby facilitating a less complex substrate transport.

[0098] Optionally, when the first vapor deposition source 101 is arranged in Figure 5A At the first deposition location shown, another material layer can be deposited on the substrate using the third vapor deposition tube 130 of the first vapor deposition source 101. The third vapor deposition tube 130 is located below the mixed material layer deposited using the first and second vapor distribution channels. The additional material layer can be an electron injection layer, and / or the mixed material layer can be a first sub-layer of the cathode layer. Figure 5BAt the second deposition location shown, the third row of nozzles in the third vapor distribution conduit 130 can be guided toward the shield, such that at the second deposition location, only the mixed material layer is deposited onto the substrate using the first and second vapor distribution conduits. The mixed material layer can be a second sublayer of the cathode layer. For example, as... Figure 5B As shown, the third row of nozzles of the third steam distribution pipe 130 can be guided toward the idle shield 202 at the second deposition position, so that the steam material ejected by the third row of nozzles impacts and accumulates on the idle shield 202, which acts as a shield.

[0099] In some embodiments that can be combined with other embodiments described herein, the vapor deposition pipes are fixedly mounted on the body of the vapor deposition source so that they can rotate in unison about a rotation axis when the vapor deposition source rotates. If the vapor deposition source includes three vapor distribution pipes, the first vapor distribution pipe may be arranged at the front side of the vapor deposition source between the second and third vapor distribution pipes.

[0100] Figure 6A and Figure 6B Two subsequent stages of another method for arranging a coated substrate using a vapor deposition source according to embodiments described herein are shown. Figure 6B The second stage shown corresponds to Figure 4A The stages shown are as described above and will not be repeated here. The area below the first overhang 12 is coated by angled deposition as described herein, specifically by a cathode layer stacked with OLED layers. This ensures reliable electrical contact and low contact resistance between the cathode layer and the first sidewall 11. Figure 6A In the first stage shown, a layer, particularly an organic layer, is deposited below the cathode layer.

[0101] Figure 6A It shows the deposition Figure 6B Before the cathode layer, an organic layer is deposited on the substrate using a third evaporation source 103 below the cathode layer. For example, the third evaporation source 103 may be an organic material source and / or may be arranged upstream of the first evaporation source 101 along the substrate transport path, such as... Figure 1 The diagram schematically depicts a vacuum deposition system. The first evaporation source 101 can be a metal source.

[0102] The third vapor deposition source 103 may have one, two, or more vapor distribution channels, such as a first vapor distribution channel 610 for depositing a first material, a second vapor distribution channel 620 for depositing a second material, and a third vapor distribution channel 630 for depositing a third material. Each vapor distribution channel may have a (single) row of nozzles. The first, second, and third materials may be organic materials, and the third vapor deposition source 103 may be an organic source, i.e., a vapor deposition source for coating a substrate with one or more organic layers. Two or more materials may be co-deposited to provide a mixed organic layer on the substrate. Alternatively or additionally, two organic layers may be deposited on top of each other.

[0103] A third evaporation source 103 is arranged at the first deposition position for depositing material onto the substrate. Specifically, the third evaporation source rotates about a rotation axis to the first deposition position. Figure 6A As shown in the first deposition location, the first primary vapor deposition direction of the first row of nozzles in the first vapor distribution conduit 610 is tilted at a first tilt angle relative to the surface normal of the substrate to reduce the deposition of the first material below the first overhang 12. Specifically, contact between the deposited layer and the first sidewall 11 can be reduced or prevented by tilting the first primary vapor deposition direction "away" from the area below the overhang. The second and third rows of nozzles in the second and third vapor distribution conduits can also be tilted relative to the surface normal to reduce material deposition below the first overhang 12.

[0104] In some embodiments, the first material is an organic material, and the first tilt angle is adapted to reduce the deposition of organic material below the first overhang. Specifically, the front side 60 of the third vapor deposition source 103 may be tilted relative to the substrate transport path T at an angle of, for example, 10° or greater, or 15° or greater, to reduce material deposition below the first overhang 12. Specifically, the nozzle channels of all nozzles of the third vapor deposition source 103 may be tilted relative to the surface normal of the substrate away from the region below the overhang 12.

[0105] Because the organic material is deposited only thinly below the first overhang or not at all below the first overhang, the contact between the subsequently deposited metal layer and the first sidewall 11 can be improved (see...). Figure 6B In particular, with a thinner lower layer deposited, metal vapor can more easily penetrate the area below the overhang in subsequent coating stages, and an improved contact area between the metal layer and the first sidewall 11 can be ensured.

[0106] exist Figure 6B The image shows the subsequent coating stage, in which a metal layer (particularly the cathode layer) is deposited. Figure 6AAbove the organic material deposited in the middle, the metal is deposited via an angled deposition below the first overhang as described herein, to provide improved contact between the metal layer and the first sidewall 11. Referring to the above embodiments (e.g., in...) Figure 4A (in +B and 5A+B).

[0107] In some embodiments that can be combined with other embodiments described herein, the first vapor deposition source includes a first vapor distribution conduit and at least one additional vapor distribution conduit, each vapor distribution conduit including a single row of nozzles arranged in a substantially vertical array above each other. In some embodiments, each row of nozzles has twenty or more nozzles, particularly 30 or more nozzles.

[0108] In some embodiments that can be combined with other embodiments described herein, the shaper shield 201 is arranged in front of the first row of nozzles to shape the vapor plume ejected by the first row of nozzles into an asymmetric shape relative to the first principal evaporation direction M1, for example, to reduce material deposition on the side of the first principal evaporation direction opposite to the first overhang compared to the opposite side of the first principal evaporation direction. Specifically, the shaper shield 201 is arranged to shape the vapor plume asymmetric relative to the first principal evaporation direction to increase the ratio between a first deposition amount of first material in the region below the first overhang and a second deposition amount of first material on the uncovered area of ​​the substrate, i.e., to increase the thickness of the first material deposited below the first overhang relative to the thickness of the first material deposited on the uncovered substrate area. The aspect of “asymmetric plume shaping” having the shaper shield 201 as described herein is considered a separate aspect, which can be used independently or in combination with the aspect of “tilted principal evaporation direction” described herein.

[0109] Specifically, the vapor deposition source may be characterized by a shaper shield disposed in front of (at least) the first row of nozzles and configured to asymmetrically limit the opening angle of the vapor plume ejected from the first row of nozzles. The shaper shield is configured to shape the vapor plume ejected from the first row of nozzles asymmetrically relative to the first primary vapor deposition direction, such that the opening angle of the vapor plume is different on opposite sides of the primary vapor deposition direction. Material deposition on the side of the primary vapor deposition direction away from the first overhang can be more strongly limited than material deposition on the side of the primary vapor deposition direction facing the first overhang. Specifically, the first half-angle of the vapor plume on the first side of the primary vapor deposition direction facing the region below the first overhang can be shaped to be larger than the second half-angle of the vapor plume on the second side of the primary vapor deposition direction away from the region below the first overhang. This can increase the ratio between the first thickness of the first material deposited below the first overhang and the second thickness of the first material deposited on the uncovered area of ​​the substrate. The shaper shield may include a shield body having a substantially vertically extending slit aligned with a first row of nozzles to asymmetrically shape the vapor plume ejected by the first row of nozzles.

[0110] Therefore, based on the embodiments described herein, improved vapor deposition source arrangements and improved coating methods are provided, particularly for “maskless” OLED pixel deposition using angled deposition under overhangs instead of fine metal masks. As used herein, “angled deposition” refers to the tilted main vapor deposition direction of one or more nozzle rows or the tilted nozzle channels relative to the surface normal of the substrate, used to increase (or decrease) deposition under overhangs.

[0111] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from the basic scope of this disclosure, the scope of which is defined by the appended claims.

[0112] In particular, this written description uses examples to disclose the contents of this disclosure, including best practices, and also enables any person skilled in the art to practice the described subject matter, including making and using any apparatus or system and performing any combined methods. While various specific embodiments have been disclosed for the foregoing, the mutually non-exclusive features of the above embodiments can be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if a claim has structural elements that are not different from the literal language of the claim, or if a claim includes equivalent structural elements that are not substantially different from the literal language of the claim.

Claims

1. A method for coating a substrate (10) in a vacuum chamber, the substrate having a structure formed thereon, the structure including a first sidewall (11) adjacent to a pixel region (13) and a first overhang (12) extending from the first sidewall (11), the method comprising: A first vapor deposition source (101) is arranged at a first deposition location. The first vapor deposition source has a first vapor distribution conduit (110), the first vapor distribution conduit has a first row of nozzles (111), and the first row of nozzles has a first main vapor deposition direction (M1). The substrate (10) is transported through the first vapor deposition source (101), while the first material is guided from the first row of nozzles (111) toward the substrate. In the first deposition location, the first main vapor deposition direction (M1) is tilted by a first tilt angle (α1) relative to the surface normal of the substrate to increase or decrease the deposition of the first material below the first overhang (12).

2. The method of claim 1, wherein the first tilt angle (α1) is 15° or greater, particularly 30° or greater.

3. The method of claim 1 or 2, wherein the first material is a metal, and at the first deposition location, the first primary vapor deposition direction (M1) is inclined to increase the contact area between the metal and the first sidewall below the first overhang.

4. The method of claim 3, wherein the shaper shield (201) is arranged in front of the first row of nozzles (111) for shaping the vapor plume ejected by the first row of nozzles into an asymmetric shape relative to the first primary vapor deposition direction (M1).

5. The method according to any one of claims 1 to 4, wherein the first vapor deposition source has a second vapor distribution conduit (120), the second vapor distribution conduit has a second row of nozzles (121), and the second row of nozzles has a second main vapor deposition direction (M). 2 ), wherein the second principal evaporation direction (M) 2 The first primary evaporation direction (M1) and the first primary evaporation direction (M1) are inclined to each other to achieve co-deposition of the mixed material layer on the substrate at the first deposition location.

6. The method of claim 5, wherein during the transport of the substrate (10) through the first vapor deposition source (101), the first vapor distribution pipe and the second vapor distribution pipe are used to co-deposit the mixed metal layer onto the substrate.

7. The method of claim 6, wherein the hybrid metal layer is a cathode layer of an OLED layer stack.

8. The method according to any one of claims 5 to 7, wherein, At the first deposition location, the second primary evaporation direction is tilted by a second tilt angle smaller than the first tilt angle (α1) relative to the surface normal of the substrate, the first tilt angle and the second tilt angle having the same sign relative to the surface normal, to increase material deposition below the first overhang.

9. The method of any one of claims 1 to 8, wherein the first vapor deposition source has a third vapor distribution conduit (130), the third vapor distribution conduit has a third row of nozzles, the third row of nozzles has a third principal vapor deposition direction, the first row of nozzles and the third row of nozzles are configured to deposit two layers stacked on top of each other onto the substrate at the first deposition location during transport of the substrate through the first vapor deposition source, in particular, wherein the third principal vapor deposition direction (M3) and the first principal vapor deposition direction (M1) are inclined away from each other to enable the two layers to be deposited stacked on top of each other.

10. The method of claim 9, wherein, During the transport of the substrate through the first vapor deposition source, an electron injection layer is deposited onto the substrate using the third vapor distribution pipe (130), and a cathode layer is deposited over the electron injection layer using at least the first vapor distribution pipe (110), or the cathode layer is co-deposited over the electron injection layer using the first vapor distribution pipe and the second vapor distribution pipe (120).

11. The method of claim 9 or 10, wherein a shaper shield (201) is provided to reduce or prevent overlap at the first deposition location of a vapor plume ejected from the first row of nozzles of the first vapor distribution conduit with a vapor plume ejected from the third row of nozzles of the third vapor distribution conduit.

12. The method of any one of claims 1 to 11, wherein the first vapor deposition source is rotatable to an idle position, wherein the first row of nozzles of the first vapor distribution conduit is guided toward the idle shield (202).

13. The method of any one of claims 1 to 12, further comprising: A second vapor deposition source (102) is arranged at a second deposition location. The second vapor deposition source has a further first vapor distribution conduit (110'), which has a further first row of nozzles (111') and a further first row of nozzles having a further first primary vapor deposition direction (M1'). The substrate (10) is transported through the second vapor deposition source (102), while the first material is guided toward the substrate from the other first row of nozzles (111'). In the second deposition position, the additional first primary evaporation direction (M1') of the additional first row of nozzles (111') is tilted by an additional first tilt angle (α1') relative to the surface normal of the substrate, and the first tilt angle (α1) and the additional first tilt angle (α1') have opposite signs relative to the surface normal.

14. The method of claim 13, wherein the structure formed on the substrate includes a second sidewall (11') adjacent to the pixel region (13) on the other side of the pixel region (13), like the first sidewall (11), and a second overhang (12') partially extending from the second sidewall (11') over the pixel region, and The first tilt angle (α1) of the first row of nozzles increases the deposition of the first material below the first overhang (12), and the additional first tilt angle (α1') of the other first row of nozzles increases the deposition of the first material below the second overhang (12').

15. The method of claim 13 or 14, wherein the first vapor deposition source (101) coats the substrate with a first sublayer of a cathode layer comprising a co-deposited metal, and the second vapor deposition source (102) coats the substrate with a second sublayer of the cathode layer comprising the co-deposited metal.

16. The method of any one of claims 1 to 12, further comprising: The first evaporation source (101) is rotated to a second deposition position, in which the first principal evaporation direction (M1) of the first row of nozzles (111) is tilted relative to the surface normal of the substrate by a modified first tilt angle relative to the surface normal of the substrate, the first tilt angle and the modified first tilt angle having opposite signs relative to the surface normal; and The substrate (10) is transported through the first vapor deposition source, while the first material is guided from the first row of nozzles toward the substrate.

17. The method of claim 16, wherein the structure formed on the substrate includes a second sidewall (11') adjacent to the pixel region (13) on the other side of the pixel region (13), like the first sidewall (11), and a second overhang (12') extending partially from the second sidewall over the pixel region, and The first tilt angle is adapted to increase the deposition of the first material below the first overhang, and the modified first tilt angle is adapted to increase the deposition of the first material below the second overhang.

18. The method of any one of claims 1 to 17, wherein the first material is an organic material, and the first tilt angle is adapted to reduce or avoid deposition of the organic material below the first overhang, particularly to reduce or prevent contact between the organic material and the first sidewall.

19. The method of claim 18, further comprising depositing metal over the organic material, wherein the metal is deposited below the first overhang via angled deposition to provide contact area between the metal and the first sidewall.

20. The method of any one of claims 1 to 19, wherein the first vapor deposition source (101) comprises the first vapor distribution conduit (110) and at least one additional vapor distribution conduit, each vapor distribution conduit comprising a single row of nozzles extending in a substantially vertical direction and having twenty or more nozzles.

21. The method of any one of claims 1 to 20, wherein the first vapor deposition source is rotatable about a rotation axis, and the first vapor deposition source is arranged at the first deposition position by rotating the first vapor deposition source about the rotation axis to the first deposition position.

22. A vapor deposition source arrangement (100) for depositing two or more materials on a substrate having a structure with overhangs formed thereon, the vapor deposition source arrangement comprising: The first vapor deposition source (101) includes: A first vapor distribution conduit (110) has a first row of nozzles (111) having a first main vapor deposition direction (M1) for depositing a first material on the substrate; and The second vapor distribution pipe (120) has a second row of nozzles (121), the second row of nozzles having a second main vapor deposition direction (M). 2 ), used to deposit a second material on the substrate; Rotary driver (113) for rotating the first vapor deposition source about a rotation axis; and The controller (114) is configured to rotate the first evaporation source to a first deposition position before transporting the substrate past the first evaporation source, wherein, at the first deposition position, the first primary evaporation direction (M1) is tilted by a first tilt angle (α1) relative to the surface normal (SN) of the substrate to increase or decrease the deposition of the first material below the overhang.

23. A vapor deposition source arrangement (100) for depositing two or more materials on a substrate, comprising: The first vapor deposition source (101) includes: Two or more vapor distribution channels, including a first vapor distribution channel (110) having a first row of nozzles (111) having a first main vapor deposition direction for depositing a first material on the substrate, wherein the two or more vapor distribution channels define a front side (60) of the first vapor deposition source, the front side being directed toward a substrate transport path (T) and being arranged opposite to a rear side (61) of the first vapor deposition source; The front side (60) of the first vapor deposition source is inclined at a first sub-angle (x1) relative to the substrate transport path (T), and the front surface of the first vapor distribution pipe (110) provided with the first row of nozzles (111) is inclined at a second sub-angle (x2) relative to the front side (60) of the first vapor deposition source, wherein the sum of the first sub-angle (x1) and the second sub-angle (x2) defines a first tilt angle (α1) of the first main vapor deposition direction (M1) relative to the surface normal (SN) of the substrate.

24. The vapor deposition source arrangement as described in claim 23, further comprising: A rotary driver (113) is used to rotate the first vapor deposition source about a rotation axis; as well as The controller (114) is configured to rotate the first vapor deposition source to a first deposition position before transporting the substrate past the first vapor deposition source, wherein, at the first deposition position, the front side (60) of the first vapor deposition source is tilted relative to the substrate transport path (T) by the first sub-angle (x1).

25. The vapor deposition source arrangement (100) as claimed in claim 23 or 24, wherein the first sub-angle (x1) is 10° or greater, and the second sub-angle (x2) is 15° or greater.

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