Semiconductor module integrating super junction MOSFET and driving circuit
By integrating superjunction MOSFETs and driving circuits into a semiconductor module, the problems of excessive parasitic parameters and susceptibility to interference-induced false turn-on in discrete designs are solved, achieving efficient and reliable high power density operation and meeting the development needs of high-power power electronic equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-29
- Publication Date
- 2026-04-07
AI Technical Summary
In the existing technology, discrete superjunction MOSFETs and drive circuit designs have problems such as excessive parasitic parameters and susceptibility to interference-induced false turn-on, making it difficult to meet the high efficiency and high power density requirements of the next generation of high-power power electronic equipment.
The semiconductor module, which integrates superjunction MOSFETs and driving circuits, reduces parasitic parameters and improves overall system efficiency and reliability through the integrated structure within the package housing, including electrical processing components and shielding components. It uses superjunction MOSFETs as PFC control switches to achieve high-voltage, high-frequency, and high-efficiency operation.
It effectively reduces the difficulty of drive control, improves the overall system efficiency, reliability and power density, and meets the development needs of the new generation of high-power power electronic equipment.
Smart Images
Figure CN121814074A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of power semiconductor technology, and more specifically, to a semiconductor module integrating a superjunction MOSFET and a driving circuit. Background Technology
[0002] Superjunction MOSFETs are high-voltage power semiconductor devices based on the charge balance principle. Through their alternating P-pillar and N-pillar structure, they achieve low on-resistance and switching losses when blocking high voltage, significantly improving power conversion efficiency and power density. These devices are widely used in medium-to-high power applications such as industrial power supplies, new energy charging modules, and frequency converters, and are key components for improving system performance.
[0003] In current high-power power electronic devices, such as three-phase wireless Vienna PFC rectifiers and high-density charging modules, discrete superjunction MOSFETs and independent driver chips are commonly used. However, this discrete layout has the following obvious limitations: First, the parasitic inductance between the power circuit and the drive circuit is relatively large, which can easily cause voltage overshoot and oscillation during the switching process, increasing device stress and electromagnetic interference; second, the drive signal path is relatively long, and inconsistent delays may affect the dynamic current sharing of multiple transistors in parallel or bridge arm synchronous operation; furthermore, the discrete design occupies a large space, which is not conducive to the miniaturization and integration of the system.
[0004] While some existing power modules co-package MOSFETs and simple driving components, their driving sections are mostly external or only integrate basic functions. Under frequent switching conditions, traditional modules are prone to false turn-on due to gate voltage interference, leading to bridge arm shoot-through risks. As charging modules and other devices develop towards higher power levels, more stringent requirements are placed on the switching frequency, efficiency, and power density of power devices. Summary of the Invention
[0005] The purpose of this invention is to solve the problems of excessive parasitic parameters and susceptibility to interference-induced false turn-on caused by the separate design of MOSFET and driving circuit in the prior art.
[0006] The purpose of this invention is to provide a semiconductor module that integrates a superjunction MOSFET and a driving circuit. By integrating the superjunction MOSFET and the driving circuit, the overall system efficiency, reliability and power density are improved, thereby meeting the development needs of the next generation of high-power power electronic equipment.
[0007] To achieve the above objectives, the present invention aims to provide a semiconductor module integrating a superjunction MOSFET and a driving circuit, including a package housing and an integrated structure located within the package housing; The encapsulation housing includes a first housing and a second housing, which are joined together to form a complete enclosed housing. The integrated structure includes an electrical processing component and a shielding processing component. The electrical processing component includes multiple pin connectors and multiple integrated circuit boards electrically connected to the pin connectors. A driving circuit is provided on the integrated circuit board. The driving circuit includes a peripheral input element, a pre-filter, a PFC processing element, and a peripheral output element connected in sequence. The PFC processing element includes a three-phase rectifier bridge and a driving control device connected to the three-phase rectifier bridge. The pre-filter is connected to the three-phase rectifier bridge, and the driving control device is connected to the peripheral output element. The shielding assembly includes a first metal plate, a second metal plate, and a third metal plate. The first metal plate, the second metal plate, and the third metal plate are assembled to form a complete shielding shell. The shielding shell is located inside the closed shell. The integrated circuit board is located inside the shielding shell. One end of the pin connector passes through the shielding shell and the closed shell.
[0008] As a further improvement to this technical solution, the three-phase rectifier bridge includes diodes D1, D2, D3, D4, D5, and D6, wherein: The positive terminal of diode D1 and the negative terminal of diode D4 are both connected to inductor L1, and inductor L1 is connected to terminal a. The positive terminal of diode D2 and the negative terminal of diode D5 are both connected to inductor L2, and inductor L2 is connected to terminal b. The positive terminal of diode D3 and the negative terminal of diode D6 are both connected to inductor L3, and inductor L3 is connected to terminal c. The negative terminals of diodes D1, D2, and D3 are all connected to terminal P. The positive terminals of diodes D4, D5, and D6 are all connected to the N terminal.
[0009] As a further improvement to this technical solution, the diodes D1, D2, D3, D4, D5, and D6 are all silicon carbide diodes.
[0010] As a further improvement to this technical solution, the drive control device includes bidirectional control switches Sa, Sb, and Sc and capacitors C1 and C2, wherein: One end of the bidirectional control switch Sa is connected to one end of the inductor L1, and the other end of the bidirectional control switch Sa is connected to the O terminal. One end of the bidirectional control switch Sb is connected to one end of the inductor L2, and the other end of the bidirectional control switch Sb is connected to the O terminal. One end of the bidirectional control switch Sc is connected to one end of the inductor L3, and the other end of the bidirectional control switch Sc is connected to the O terminal; One end of capacitor C1 is connected to terminal P, and the other end of capacitor C1 is connected to terminal O. One end of capacitor C2 is connected to the N terminal, and the other end of capacitor C2 is connected to the O terminal.
[0011] As a further improvement to this technical solution, the bidirectional control switch Sa is a MOS transistor Q1 and Q4 with their sources connected, and the drain of the MOS transistor Q1 is connected to one end of the inductor L1, and the drain of the MOS transistor Q4 is connected to the O terminal. The bidirectional control switch Sb consists of MOS transistors Q2 and Q5 connected at their sources, with the drain of MOS transistor Q2 connected to one end of the inductor L2 and the drain of MOS transistor Q5 connected to the O terminal. The bidirectional control switch Sc consists of MOS transistors Q3 and Q6 connected at their sources, with the drain of MOS transistor Q3 connected to one end of the inductor L3 and the drain of MOS transistor Q6 connected to the O terminal.
[0012] As a further improvement to this technical solution, the MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are all superjunction MOSFETs.
[0013] As a further improvement to this technical solution, the pre-filter is a CRC π third-order filter circuit.
[0014] As a further improvement to this technical solution, the first metal plate has a corresponding number of integrated slots on its upper surface, and the integrated circuit board is installed in the integrated slots; the third metal plate has a number of bayonets corresponding to the number of pin connectors, one end of the pin connector is engaged with the bayonet, and the contact area between the pin connector and the bayonet is coated with an insulating coating; the surface of the first housing has a mounting groove for accommodating and fixing the shielding housing.
[0015] As a further improvement to this technical solution, the surface of the first metal plate is provided with a first slot and a second slot, and the bottom corners of the second metal plate are fixedly connected with plate feet, the plate feet away from the third metal plate engaging with the second slot; the two ends of the third metal plate are fixedly connected with end plates, one end of the end plate protruding and engaging with the first slot, and the plate feet near the third metal plate engaging with the top of the end plate.
[0016] Compared with the prior art, the beneficial effects of the present invention are as follows: In this semiconductor module integrating superjunction MOSFETs and drive circuits, the drive control device operates by controlling the on / off state of bidirectional control switches Sa, Sb, and Sc to control the charging and discharging of the PFC inductor. Compared with existing PFC circuits, fewer electronic components flow through the circuit during operation. Furthermore, the use of two MOSFETs with their inherent anti-parallel body diodes sharing the drive signal reduces the difficulty of control and drive, thereby improving the overall system efficiency, reliability, and power density. Using superjunction MOSFETs as PFC control switches overcomes the limitations of traditional silicon-based devices, achieving high-voltage, high-frequency, and high-efficiency operation with lower conduction and switching losses, thus increasing power density and reducing system heat dissipation and cost. Attached Figure Description
[0017] Figure 1 This is a traditional bridged Boost PFC circuit diagram; Figure 2 This is a circuit diagram of an interleaved parallel Boost PFC circuit. Figure 3 This is a circuit diagram of a bridgeless Boost PFC circuit. Figure 4 This is a circuit diagram of a dual bridgeless Boost PFC circuit. Figure 5 This is a circuit diagram for a totem pole Boost PFC circuit. Figure 6 This is a schematic diagram of the overall structure of the semiconductor module of the present invention; Figure 7 This is a schematic cross-sectional view of the semiconductor module of the present invention; Figure 8 This is a schematic diagram showing the overall structure of the semiconductor module of the present invention. Figure 9 This is a schematic diagram showing the structural assembly and shielding assembly of the present invention. Figure 10 This is a schematic diagram of the PFC processing element circuit of the present invention; Figure 11 This is a schematic diagram of the current path of the PFC processing element circuit of the present invention. Figure 1 ; Figure 12 This is a schematic diagram of the current path of the PFC processing element circuit of the present invention. Figure 2 .
[0018] The meanings of the labels in the diagram are as follows: 1. Encapsulation housing; 11. First housing; 111. Receiving groove; 12. Second housing; 2. Integrated structure; 21. Electrical processing component; 211. Pin connector; 212. Integrated circuit board; 22. Shielding processing component; 221. First metal plate; 2211. Integrated slot; 2212. First card slot; 2213. Second card slot; 222. Second metal plate; 2221. Board foot; 223. Third metal plate; 2231. End plate. Detailed Implementation
[0019] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0020] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0022] Superjunction MOSFETs are high-voltage power semiconductor devices based on the charge-balance principle. Through their alternating P-pillar and N-pillar structure, they achieve low on-resistance and switching losses when blocking high voltages, significantly improving power conversion efficiency and power density. These devices are widely used in medium-to-high power applications such as industrial power supplies, new energy charging modules, and frequency converters, and are key components for improving system performance. The associated gate drive circuitry is responsible for providing precise timing, sufficient drive capability, and necessary protection functions, directly affecting the MOSFET's switching characteristics, reliability, and the overall system's electromagnetic compatibility performance.
[0023] In current high-power power electronic devices, such as three-phase wireless Vienna PFC rectifiers and high-density charging modules, discrete superjunction MOSFETs and independent driver chips are commonly used. However, this discrete layout has obvious limitations: First, the parasitic inductance between the power circuit and the drive circuit is relatively large, which can easily cause voltage overshoot and oscillation during switching, increasing device stress and electromagnetic interference; second, the drive signal path is relatively long, and inconsistent delays may affect the dynamic current sharing of multiple transistors in parallel or bridge arm synchronous operation; third, the discrete design occupies a large space, which is not conducive to the miniaturization and integration of the system.
[0024] The most common topology in PFC circuits is the Boost topology, which includes traditional bridged Boost PFC, interleaved parallel Boost PFC, bridgeless Boost PFC, dual bridgeless Boost PFC, totem pole Boost PFC, etc. Traditional bridged Boost PFC circuits, such as Figure 1 As shown, when MOSFET Q1 is on, the conduction path during the positive half-cycle is diode D1, inductor L1, MOSFET Q1, and diode D4; the conduction path during the negative half-cycle is diode D2, inductor L1, MOSFET Q1, and diode D3. When MOSFET Q1 is off, the conduction path during the positive half-cycle is diode D1, inductor L1, diode D5, resistor Rd, and diode D4; the conduction path during the negative half-cycle is diode D2, inductor L1, diode D5, resistor Rd, and diode D3.
[0025] In each state, there are 3 conducting switching devices. Its advantage is that the circuit topology is easy to control and simple. However, there is only one MOSFET Q1 switching device, which has very high voltage and current stress, making it difficult to use in high-power applications. Interleaved parallel Boost PFC circuits, such as Figure 2 As shown, this topology consists of two identical Boost PFC converters connected in parallel, which reduces the inductance of the PFC. By controlling the currents of the two power inductors to be interleaved by 180°, the input and output current ripple can be reduced, and the size of the EMI filter can be reduced. This topology is the same as the conventional bridged converter in other control and power routing directions, except that the number of switching devices is increased. Bridgeless Boost PFC circuit, such as Figure 3 As shown, removing the rectifier bridge of the bridged PFC reduces the number of switching devices.
[0026] During the positive half-cycle, when MOSFET Q1 is off, the power path consists of inductor L1, diode D1, resistor Rd, MOSFET Q2, and inductor L2; when MOSFET Q1 is on, the power path consists of inductor L1, MOSFET Q1, MOSFET Q2, and inductor L2.
[0027] During the negative half-cycle, when MOSFET Q2 is off, the power path consists of inductor L2, diode D2, resistor Rd, MOSFET Q1, and inductor L1; when MOSFET Q2 is on, the power path consists of inductor L2, MOSFET Q2, MOSFET Q1, and inductor L1. Compared to traditional bridged PFC, the number of switching devices in the conduction path is reduced, which helps improve system efficiency. For switching devices with built-in anti-parallel diodes, MOSFETs Q1 and Q2 can share a single drive signal. This topology is simple to control, but current sampling is difficult. Furthermore, the output DC voltage terminals are floating, and common-mode interference is isolated, resulting in severe EMI problems in the circuit. Dual bridgeless Boost PFC circuit, such as Figure 4 As shown, compared to the bridgeless PFC circuit, the dual bridgeless PFC circuit improves EMI performance.
[0028] During the positive half-cycle, when MOSFET Q1 is off, the power path consists of inductor L1, diode D1, resistor Rd, and diode D4; when MOSFET Q1 is on, the power path consists of inductor L1, MOSFET Q1, and diode D4.
[0029] During the negative half-cycle, when MOSFET Q2 is off, the power path consists of inductor L2, diode D2, resistor Rd, and diode D3; when MOSFET Q2 is on, the power path consists of inductor L2, MOSFET Q2, and diode D3. Its control method is similar to that of a basic bridgeless PFC. The added diode significantly reduces circuit interference, but increases system cost. Totem pole Boost PFC circuit, such as Figure 5 As shown, this can solve the EMI problem of bridgeless PFC.
[0030] During the positive half-cycle, when MOSFET Q1 is off and MOSFET Q2 is on, the power path consists of inductor L, MOSFET Q2, and diode D2; when MOSFET Q2 is off and MOSFET Q1 is on, the power path consists of inductor L, MOSFET Q1, resistor Rd, and diode D2.
[0031] During the negative half-cycle, when MOSFET Q1 is off and MOSFET Q2 is on, the power path consists of diode D1, resistor Rd, MOSFET Q2, and inductor L. When MOSFET Q1 is on and MOSFET Q2 is off, the power path consists of diode D1, MOSFET Q1, and inductor L. This topology is complex to control; the upper MOSFET requires floating ground, increasing design difficulty and cost. Furthermore, MOSFETs Q1 and Q2 exhibit reverse recovery issues, which can easily increase circuit losses.
[0032] In summary, while some existing power modules co-package MOSFETs and simple drive components, their drive sections are mostly external or only integrate basic functions, still exhibiting shortcomings in key performance areas such as drive interference immunity under high-speed switching, active Miller clamping, and rapid fault protection. For example, under frequent switching and high di / dt conditions, traditional modules are prone to false turn-on due to gate voltage interference, leading to bridge arm shoot-through risk. Furthermore, insufficient thermal coupling design between the drive and power sections may cause drive parameter drift due to temperature increases, affecting long-term reliability.
[0033] In particular, as charging modules and other devices develop towards higher power levels (such as 15kW, 20kW and above), more stringent requirements are placed on the switching frequency, efficiency and power density of power devices.
[0034] There is an urgent need for a semiconductor module that can achieve deep integration of superjunction MOSFETs and high-performance drive circuits, thereby improving the overall system efficiency, reliability and power density by reducing parasitic parameters, and meeting the development needs of the next generation of high-power power electronic equipment.
[0035] Therefore, please refer to Figures 6-10 As shown, the purpose of this embodiment is to provide a semiconductor module integrating a superjunction MOSFET and a driving circuit, including a package housing 1 and an integrated structure 2 located within the package housing 1; The encapsulation housing 1 includes a first housing 11 and a second housing 12, which are joined together to form a complete enclosed housing. The integrated structure 2 includes an electrical processing component 21 and a shielding processing component 22. The electrical processing component 21 includes multiple pin connectors 211 and multiple integrated circuit boards 212 electrically connected to the pin connectors 211. The integrated circuit board 212 is provided with a driving circuit. The driving circuit includes peripheral input components, a pre-filter, a PFC processing component, and a peripheral output component connected in sequence. The PFC processing component includes a three-phase rectifier bridge and a driving control device connected to the three-phase rectifier bridge. The pre-filter is connected to the three-phase rectifier bridge, and the driving control device is connected to the peripheral output component. The shielding assembly 22 includes a first metal plate 221, a second metal plate 222 and a third metal plate 223. The first metal plate 221, the second metal plate 222 and the third metal plate 223 are assembled to form a complete shielding shell. The shielding shell is located inside the closed shell. The integrated circuit board 212 is located inside the shielding shell. One end of the pin connector 211 passes through the shielding shell and the closed shell. The integrated circuit board 212 uses a drive circuit to efficiently and stably convert the three-phase AC power from the power grid into controllable DC power. Specifically, the three-phase AC power is input by external input components, and then passes through a pre-filter to filter out noise, a three-phase rectifier bridge to convert AC to DC power, and then the drive control device switches to control the voltage to obtain a stable pulsating DC voltage. Finally, the voltage is output by external output components. Meanwhile, by installing multiple electrical processing components 21 inside the shielded housing, multiple drive circuits are integrated, effectively reducing the overall size. Furthermore, due to the closed structure and metal material of the shielded housing, interference shielding and heat dissipation of the drive circuits are also achieved, thereby improving the overall system efficiency, reliability, and power density, and meeting the development needs of the next generation of high-power power electronic equipment.
[0036] The above structure is disclosed below: The primary objective of this application is to efficiently, stably, and with high quality convert three-phase alternating current from the power grid into controllable direct current, providing an ideal "coarse" DC bus voltage for subsequent DC-DC conversion, ultimately charging the battery. The entire energy flow and signal control path is as follows: Three-phase AC power from the power grid → external input components → pre-filter → three-phase rectifier bridge → drive control device → external output components → stable DC bus output.
[0037] The three-phase AC power is input through external input components and then "purified" by a pre-filter. There are various types of pre-filters, such as three-phase inductors and safety capacitors. In this application, a CRC π third-order filter circuit is preferred as the pre-filter. Setting a CRC π third-order filter circuit at the input end of the high-power charging module can effectively suppress electromagnetic interference, thereby providing a relatively "clean" input for the three-phase rectifier bridge and improving the subsequent PFC correction effect.
[0038] The three-phase rectifier bridge includes diodes D1, D2, D3, D4, D5, and D6, where: The positive terminal of diode D1 and the negative terminal of diode D4 are both connected to inductor L1, and inductor L1 is connected to terminal a. The positive terminal of diode D2 and the negative terminal of diode D5 are both connected to inductor L2, and inductor L2 is connected to terminal b. The positive terminal of diode D3 and the negative terminal of diode D6 are both connected to inductor L3, and inductor L3 is connected to terminal c. The negative terminals of diodes D1, D2, and D3 are all connected to terminal P. The positive terminals of diodes D4, D5, and D6 are all connected to the N terminal. The three-phase rectifier bridge converts three-phase AC voltage into pulsating DC voltage through six diodes. The diodes D1, D2, D3, D4, D5, and D6 mentioned above are all silicon carbide diodes, which can improve the switching frequency and efficiency of the three-phase rectifier bridge, significantly reduce losses and heat dissipation requirements, and enhance system reliability and power density.
[0039] The pulsating DC voltage is then subjected to active power factor correction by a drive control device. In this application, the drive control device includes bidirectional control switches Sa, Sb, and Sc, and capacitors C1 and C2, wherein: One end of the bidirectional control switch Sa is connected to one end of the inductor L1, and the other end of the bidirectional control switch Sa is connected to the O terminal. One end of the bidirectional control switch Sb is connected to one end of the inductor L2, and the other end of the bidirectional control switch Sb is connected to the O terminal. One end of the bidirectional control switch Sc is connected to one end of the inductor L3, and the other end of the bidirectional control switch Sc is connected to the O terminal. One end of capacitor C1 is connected to terminal P, and the other end of capacitor C1 is connected to terminal O. One end of capacitor C2 is connected to the N terminal, and the other end of capacitor C2 is connected to the O terminal.
[0040] The drive control unit uses switch control to force the current waveform of the input pulsating DC voltage to "follow" the input voltage waveform, achieving a power factor close to 1. This stabilizes the rectified pulsating DC voltage to a set value. This stable DC bus voltage is a prerequisite for the stable operation of the subsequent DC-DC stage.
[0041] Furthermore, the bidirectional control switches Sa, Sb, and Sc are each composed of two MOSFETs. Utilizing the inherent anti-parallel body diodes of these MOSFETs, they share a common drive signal, reducing the complexity of control and actuation. Specifically, The bidirectional control switch Sa consists of MOSFETs Q1 and Q4 connected at their sources, with the drain of MOSFET Q1 connected to one end of inductor L1 and the drain of MOSFET Q4 connected to terminal O. The bidirectional control switch Sb consists of MOSFETs Q2 and Q5 connected at their sources, with the drain of MOSFET Q2 connected to one end of inductor L2 and the drain of MOSFET Q5 connected to terminal O. The bidirectional control switch Sc consists of MOSFETs Q3 and Q6 connected at their sources, with the drain of MOSFET Q3 connected to one end of inductor L3 and the drain of MOSFET Q6 connected to terminal O. Taking phase a as an example, when the bidirectional control switch Sa is turned on, current flows through MOSFETs Q1 and Q4, euo=0, and the midpoint of the bridge arm is clamped to the midpoint of the PFC bus capacitor, as shown below. Figure 11 As shown; when the bidirectional control switch Sa is turned off, current flows through diode D1. When iu > 0, euo is positive; when iu < 0, euo is negative. The midpoint of the bridge arm is clamped to the positive or negative busbar of the PFC, as shown. Figure 12As shown.
[0042] The drive control device operates by controlling the on / off state of bidirectional control switches Sa, Sb, and Sc to control the charging and discharging of the PFC inductor. Since the PFC's power factor (PF) is close to 1, its working principle can be analyzed by assuming that the inductor current and input voltage are in phase, the three phases are balanced, and each phase differs by 120 degrees. (This is consistent with the above...) Figure 1-5 Compared with the existing PFC circuit shown, the number of electronic components through which current flows during operation is smaller, and the use of two MOS transistors with inherent anti-parallel body diodes sharing the drive signal reduces the difficulty of control and drive, thereby improving the overall system efficiency, reliability and power density.
[0043] It is worth noting that the MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 in this application are all superjunction MOSFETs. The core function of using superjunction MOSFETs as PFC control switches is to break through the limitations of traditional silicon-based devices and achieve high-voltage, high-frequency, and high-efficiency operation with lower conduction and switching losses, thereby improving power density and reducing system heat dissipation and cost.
[0044] Furthermore, to facilitate module assembly and installation, firstly, after completing the electrical connection between the multiple pin connectors 211 and multiple integrated circuit boards 212, the pin connectors 211 and integrated circuit boards 212 need to be fixedly installed. The upper surface of the first metal plate 221 has a corresponding number of integrated slots 2211, and the integrated circuit boards 212 are installed within the integrated slots 2211. The third metal plate 223 has a corresponding number of bayonets matching the number of pin connectors 211. One end of each pin connector 211 engages with one of the bayonets, and... An insulating coating is applied to the surface of the foot connector 211 where it contacts the bayonet. The surface of the first housing 11 is provided with a mounting groove 111 for accommodating and fixing the shielding housing. The integrated circuit board 212 is installed into the integrated groove 2211, and the pin connector 211 is snapped into the third metal plate 223. Then, the second metal plate 222 is covered, and the shielding housing formed by the combination of the first metal plate 221, the second metal plate 222 and the third metal plate 223 is installed into the mounting groove 111, so that the first housing 11 and the second housing 12 can be assembled vertically.
[0045] Meanwhile, in order to ensure the stability of the shielding shell when the first shell 11 and the second shell 12 are assembled, the surface of the first metal plate 221 is provided with a first slot 2212 and a second slot 2213. The bottom corners of the second metal plate 222 are fixedly connected with plate feet 2221, and the plate feet 2221 away from the third metal plate 223 engage with the second slot 2213. The two ends of the third metal plate 223 are fixedly connected with end plates 2231, one end of the end plate 2231 protruding into the first slot. The plate foot 2221 near the third metal plate 223 engages with the top of the end plate 2231. During installation, the end plate 2231 is first inserted into the first slot 2212, and then the second metal plate 222 is placed on top, so that the plate foot 2221 engages with the second slot 2213 and the end plate 2231. This ensures the stability of the shielding shell and prevents the shielding shell from breaking apart when the first shell 11 and the second shell 12 are assembled, which is beneficial for the combination and installation of the module.
[0046] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely preferred examples and are not intended to limit the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.
Claims
1. A semiconductor module integrating a superjunction MOSFET and a driving circuit, characterized in that: It includes a package housing (1) and an integrated structure (2) located within the package housing (1); The encapsulation housing (1) includes a first housing (11) and a second housing (12), which are joined together to form a complete enclosed housing. The integrated structure (2) includes an electrical processing component (21) and a shielding processing component (22). The electrical processing component (21) includes multiple pin connectors (211) and multiple integrated circuit boards (212) electrically connected to the pin connectors (211). The integrated circuit board (212) is provided with a driving circuit. The driving circuit includes a peripheral input element, a pre-filter, a PFC processing element, and a peripheral output element connected in sequence. The PFC processing element includes a three-phase rectifier bridge and a driving control device connected to the three-phase rectifier bridge. The pre-filter is connected to the three-phase rectifier bridge, and the driving control device is connected to the peripheral output element. The shielding assembly (22) includes a first metal plate (221), a second metal plate (222), and a third metal plate (223). The first metal plate (221), the second metal plate (222), and the third metal plate (223) are assembled to form a complete shielding shell. The shielding shell is located inside the closed shell. The integrated circuit board (212) is located inside the shielding shell. One end of the pin connector (211) passes through the shielding shell and the closed shell.
2. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 1, characterized in that: The three-phase rectifier bridge includes diodes D1, D2, D3, D4, D5, and D6, wherein: The positive terminal of diode D1 and the negative terminal of diode D4 are both connected to inductor L1, and inductor L1 is connected to terminal a. The positive terminal of diode D2 and the negative terminal of diode D5 are both connected to inductor L2, and inductor L2 is connected to terminal b. The positive terminal of diode D3 and the negative terminal of diode D6 are both connected to inductor L3, and inductor L3 is connected to terminal c. The negative terminals of diodes D1, D2, and D3 are all connected to terminal P. The positive terminals of diodes D4, D5, and D6 are all connected to the N terminal.
3. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 2, characterized in that: The diodes D1, D2, D3, D4, D5, and D6 are all silicon carbide diodes.
4. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 2, characterized in that: The drive control device includes bidirectional control switches Sa, Sb, and Sc, and capacitors C1 and C2, wherein: One end of the bidirectional control switch Sa is connected to one end of the inductor L1, and the other end of the bidirectional control switch Sa is connected to the O terminal. One end of the bidirectional control switch Sb is connected to one end of the inductor L2, and the other end of the bidirectional control switch Sb is connected to the O terminal. One end of the bidirectional control switch Sc is connected to one end of the inductor L3, and the other end of the bidirectional control switch Sc is connected to the O terminal; One end of capacitor C1 is connected to terminal P, and the other end of capacitor C1 is connected to terminal O. One end of capacitor C2 is connected to the N terminal, and the other end of capacitor C2 is connected to the O terminal.
5. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 4, characterized in that: The bidirectional control switch Sa consists of MOSFETs Q1 and Q4 connected at their sources, with the drain of MOSFET Q1 connected to one end of the inductor L1 and the drain of MOSFET Q4 connected to the O terminal. The bidirectional control switch Sb consists of MOS transistors Q2 and Q5 connected at their sources, with the drain of MOS transistor Q2 connected to one end of the inductor L2 and the drain of MOS transistor Q5 connected to the O terminal. The bidirectional control switch Sc consists of MOS transistors Q3 and Q6 connected at their sources, with the drain of MOS transistor Q3 connected to one end of the inductor L3 and the drain of MOS transistor Q6 connected to the O terminal.
6. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 5, characterized in that: The MOSFETs Q1, Q2, Q3, Q4, Q5, and Q6 are all superjunction MOSFETs.
7. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 1, characterized in that: The pre-filter is a CRC π third-order filter circuit.
8. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 1, characterized in that: The first metal plate (221) has a corresponding number of integrated slots (2211) on its upper surface, and the integrated circuit board (212) is installed in the integrated slots (2211); the third metal plate (223) has a number of bayonets that are the same as the number of pin connectors (211), one end of the pin connector (211) is engaged with the bayonet, and the surface of the pin connector (211) is coated with an insulating coating at the contact point with the bayonet; the surface of the first housing (11) has a mounting groove (111) for accommodating and fixing the shielding housing.
9. The semiconductor module integrating a superjunction MOSFET and a driving circuit according to claim 8, characterized in that: The surface of the first metal plate (221) is provided with a first slot (2212) and a second slot (2213). The bottom corners of the second metal plate (222) are fixedly connected with plate feet (2221). The plate feet (2221) away from the third metal plate (223) are engaged with the second slot (2213). The two ends of the third metal plate (223) are fixedly connected with end plates (2231). One end of the end plate (2231) protrudes and engages with the first slot (2212). The plate feet (2221) near the third metal plate (223) are engaged with the top of the end plate (2231).