Light-emitting diode packaging body and light-emitting device

Abstract

The invention provides a light-emitting diode packaging body and a light-emitting device, a through hole structure penetrating through a packaging substrate in the thickness direction is formed in the packaging substrate in the light-emitting diode packaging body, the through hole structure has different apertures on the front face and the back face of the packaging substrate, and further, the through hole structure has different apertures on the front face and the back face of the packaging substrate. The aperture of the first opening in the front surface is smaller than the aperture of the second opening in the back surface, and the arrangement of different apertures can ensure the line sleeving precision of the front surface and the back surface of the packaging substrate and the reliability of electrical connection, and ensure the electrical yield and the overall reliability of the light-emitting diode packaging body. Meanwhile, the size of the through hole structure is reduced, further, the size of the packaging body is reduced, and the adaptability of the packaging body is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, and more specifically, to a light-emitting diode package and a light-emitting device. Background Technology

[0002] Light-emitting diodes (LEDs) are widely used in various fields such as display devices, vehicle lighting, and general lighting due to their high reliability, long lifespan, and low power consumption. For example, LEDs can be used as backlight sources for various display devices. To provide effective mechanical protection for LEDs, they are often packaged, which enhances heat dissipation, improves light extraction efficiency, and optimizes beam distribution.

[0003] In existing technologies, glass is used as the packaging substrate, and through-holes are fabricated within it to create conductive pillars for electrical connection of the light-emitting unit. Since the diameter of the through-holes fabricated in the glass is usually the same on both the top and bottom surfaces, the design size of the product is typically large due to limitations in the precision of the wiring on the top and bottom surfaces of the glass. This hinders product size reduction and thus limits product adaptability. Summary of the Invention

[0004] In view of the defects and shortcomings of the existing chip packaging products described above, the purpose of this invention is to provide a light-emitting diode package and a light-emitting device. By fabricating through-holes with different diameters at both ends in the packaging substrate, the product size is gradually reduced, improving the product's adaptability.

[0005] To achieve the above and other related objectives, the present invention provides a light-emitting diode package, comprising:

[0006] A packaging substrate has a front side and a back side disposed opposite to each other. The packaging substrate has a plurality of conductive vias penetrating the packaging substrate along the thickness direction. The conductive vias have a first opening diameter at one end on the front side and a second opening diameter at one end on the back side. The first opening diameter is smaller than the second opening diameter.

[0007] The wiring layer, located on the front side of the packaging substrate, includes a first part and a second part that are insulated from each other, and the conductive vias correspond one-to-one with the first part and the second part;

[0008] Multiple light-emitting units are spaced apart on one side of the front surface. Each light-emitting unit includes a first electrode and a second electrode, which are electrically connected to the first part and the second part, respectively.

[0009] A second aspect of the present invention provides a light-emitting device, which includes a circuit board and a plurality of light-emitting elements fixed to the circuit board, the light-emitting elements including the light-emitting diode package provided in this application.

[0010] As described above, the light-emitting diode package and light-emitting device provided by the present invention have at least the following beneficial technical effects:

[0011] The light-emitting diode package of the present invention has a through-hole structure formed in the packaging substrate along the thickness direction. The through-hole structure has different apertures on the front and back sides of the packaging substrate. Furthermore, the first opening aperture on the front side is smaller than the second opening aperture on the back side. By setting different apertures, the wiring fitting accuracy and electrical connection reliability of the front and back sides of the packaging substrate can be guaranteed, thus ensuring the electrical yield and overall reliability of the light-emitting diode package. At the same time, it is beneficial to reduce the size of the through-hole structure, which in turn helps to reduce the size of the package and improve the adaptability of the package. Attached Figure Description

[0012] Figure 1 The diagram shown is a structural schematic of a light-emitting element package in the prior art.

[0013] Figure 2 The diagram shown is a structural schematic of the light-emitting diode package provided in Embodiment 1 of this application.

[0014] Figure 3 Displayed as self Figure 2 A top view of the back of the packaging substrate.

[0015] Figure 4 Displayed as Figure 2 A schematic diagram of the structure of the first light-emitting unit.

[0016] Figure 5 The diagram shown is a planar structural schematic of the light-emitting device provided in Embodiment 3 of the present invention.

[0017] Figure 6 Displayed as along Figure 5 A schematic diagram of the cross-sectional structure of AA.

[0018] Figure Labels

[0019] 11. Substrate; 12. Through hole; 13. Light-emitting element.

[0020] 100. Light-emitting diode package; 110. Package substrate; 1011. Front side; 1012. Back side; 120. Through-hole structure; 121. First segment; 122. Second segment; 123. Connection point; 124. Conductive post; 130. Wiring layer; 1301. First wiring layer; 1302. Second wiring layer; 131. First part; 132. Second part; 1321. First sub-block; 1322. Second sub-block; 1323. Third sub-block; 140. Light-emitting unit; 1041. First light-emitting unit; 1042. Second light-emitting unit; 1043. Third light-emitting unit; 141. First electrode; 142. Second electrode; 106. Insulating layer; 170. Solder pad; 171. Solder pad protection layer;

[0021] 1401, First conductivity type semiconductor layer; 1042, Active layer; 1043, Second conductivity type semiconductor layer; 1044, Transparent conductive layer; 1045, Insulating protective layer; 1046, Reflective layer; 1410, Mesa structure;

[0022] 200, Light-emitting device; 201, Circuit board; 202, Light-emitting body; 203, Circuit layer; 204, Housing; 205, Solder pad. Detailed Implementation

[0023] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0024] like Figure 1 As shown, a conventional light-emitting element package includes a substrate 11 and a light-emitting element 13 located above the substrate 11. To achieve electrical connection with the light-emitting element 13, a through-hole 12 is formed in the substrate 11. In the prior art, the substrate 11 is typically glass, and the through-hole 12 is typically etched from the top and bottom surfaces of the substrate 11 to form a through-hole 12. The apertures of the through-holes on the top and bottom surfaces are usually the same; however, due to limitations in the wiring precision of the top and bottom surfaces of the substrate 11, the product design size is usually large, which is not conducive to product size reduction and thus limits product adaptability. To address this problem, this application provides a light-emitting diode package and a light-emitting device, which will now be described in detail through the following embodiments.

[0025] In one aspect, the present invention provides a light-emitting diode package, comprising:

[0026] A packaging substrate has a front side and a back side disposed opposite to each other. The packaging substrate has a plurality of conductive vias penetrating the packaging substrate along the thickness direction. The conductive vias have a first opening diameter at one end on the front side and a second opening diameter at one end on the back side. The first opening diameter is smaller than the second opening diameter.

[0027] The wiring layer, located on the front side of the packaging substrate, includes a first part and a second part that are insulated from each other, and the conductive vias correspond one-to-one with the first part and the second part;

[0028] Multiple light-emitting units are spaced apart on one side of the front surface. Each light-emitting unit includes a first electrode and a second electrode, which are electrically connected to the first part and the second part, respectively.

[0029] As described above, a through-hole structure is formed in the packaging substrate of the light-emitting diode package, extending through the packaging substrate along the thickness direction. The through-hole structure has different apertures on the front and back sides of the packaging substrate. Furthermore, the first opening aperture on the front side is smaller than the second opening aperture on the back side. By setting different apertures, the wiring fitting accuracy and electrical connection reliability of the front and back sides of the packaging substrate can be guaranteed, thus ensuring the electrical yield and overall reliability of the light-emitting diode package. At the same time, it is beneficial to reduce the size of the through-hole structure, which in turn helps to reduce the size of the package and improve the adaptability of the package.

[0030] Optionally, along the thickness direction of the packaging substrate, the through-hole structure includes a first segment extending from the front side to the back side, and a second segment extending from the back side to the front side. The aperture of the first segment gradually decreases from the first opening aperture, and the aperture of the second segment gradually decreases from the second opening aperture. The first segment and the second segment have the same aperture at the connection point.

[0031] Optionally, along the thickness direction of the packaging substrate, the via structure includes a first segment extending from the front side to the back side, and a second segment extending from the back side to the front side, wherein the via has a minimum aperture at the junction of the first segment and the second segment.

[0032] Setting the through-hole to have the minimum aperture at the connection between the first and second segments, i.e., the minimum aperture of the through-hole is located inside the substrate, allows for more flexible setting of the aperture of the first and second segments of the through-hole, especially the first opening aperture on the front and the second opening aperture on the back. This is beneficial for making different aperture designs according to the actual product size and specific application scenarios.

[0033] Optionally, the depth of the first segment is D1, and the depth of the second segment is D2, where D1 < D2.

[0034] The through-hole structure is configured with two parts having different apertures, and the first part with the smaller aperture is close to the wiring layer. This makes it easier to control the aperture of the second part, which is aligned with it. This helps to reduce the aperture of the opening portion of the second part, i.e., the second opening aperture, and thus reduces the size of the product.

[0035] Optionally, it further includes a filling layer located on one side of the front side of the packaging substrate, covering the wiring layer and filling between the light-emitting units and between the first electrode and the second electrode, exposing the light-emitting side of the light-emitting unit, wherein the side of the light-emitting unit where the first electrode and the second electrode are located is the electrode side, and the side of the light-emitting unit opposite to the electrode side is the light-emitting side.

[0036] The filling layer prevents light crosstalk between adjacent light-emitting units and improves the light emission effect of the LED package. Optionally, it also includes a solder pad, wherein the conductive via is filled with conductive layer material to form a conductive pillar electrically connected to the wiring layer, the solder pad is located above the conductive pillar on the back side of the package substrate, and is projected onto the plane where the back side of the package substrate is located, and the projected outline of the conductive pillar is located within the projected outline of the solder pad.

[0037] The formation of solder pads can increase the conductive area on the one hand, and on the other hand, it is beneficial to the stability and reliability of subsequent welding.

[0038] Optionally, the spacing between adjacent solder pads is not less than 30 μm.

[0039] Controlling the spacing between adjacent solder pads ensures that the conductive pillars are completely covered by the solder pads, guaranteeing the reliability of the electrical connection between them and thus ensuring the electrical performance of the package. It also helps control the product size. On the other hand, it ensures that there is sufficient spacing between adjacent solder pads to prevent short circuits and other phenomena, thus ensuring the reliability of the LED package.

[0040] Optionally, the arrangement direction of the plurality of light-emitting units is defined as a first direction. The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit arranged sequentially along the first direction. The first electrode and the second electrode of each light-emitting unit are distributed at intervals in the second direction. The first part is electrically connected to the second electrode of the first light-emitting unit, the second light-emitting unit, and the second electrode of the third light-emitting unit. The first direction and the second direction intersect.

[0041] Optionally, the second part includes a first sub-block, a second sub-block, and a third sub-block, wherein the first sub-block is electrically connected to the first electrode of the first light-emitting unit, the second sub-block is electrically connected to the first electrode of the second light-emitting unit, and the third sub-block is electrically connected to the first electrode of the third light-emitting unit.

[0042] Optionally, the conductive vias are configured in a one-to-one correspondence with the first sub-block, the second sub-block, and the third sub-block of the first portion and the second portion.

[0043] The first electrode of each light-emitting unit is connected in series in the first part of the wiring layer, so that the first part serves as a common electrode; each of the individual blocks in the second part is electrically connected to the second electrode of each light-emitting unit. The above configuration enables individual control of each light-emitting diode and also helps to reduce the size of the package.

[0044] Optionally, a solder pad protective layer is formed on the surface of the solder pad.

[0045] Optionally, the solder pad protective layer is a metallic Au layer or an organic protective layer.

[0046] The aforementioned protective layer of the solder pads has good environmental stability and is not easily damaged, thus ensuring the integrity of the solder pads and electrical yield, which is beneficial to improving the overall yield and reliability of the package.

[0047] Optionally, the packaging substrate is an insulating substrate.

[0048] Optionally, the packaging substrate is a glass substrate or a ceramic substrate.

[0049] The aforementioned substrate can provide sufficient support for the package, making it more stable and facilitating the transportation, welding, and other processes of the package.

[0050] Optionally, the light-emitting diode package further includes a transparent layer located above the light-emitting unit and the filling layer.

[0051] Optionally, the light-emitting unit includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. The side of the second conductivity type semiconductor layer away from the active layer is the light-emitting side of the light-emitting unit, and the light-emitting unit is fixed to the transparent layer from the light-emitting side. A reflective layer is provided on the side of the first conductivity type semiconductor layer away from the active layer.

[0052] The aforementioned transparent layer can be an adhesive layer with good light transmission, a lens-like structure with light-concentrating effect, or an adhesive layer doped with color-converting particles (phosphors or quantum dots). Therefore, the transparent layer is beneficial for adjusting the light emission effect of the encapsulation.

[0053] A second aspect of the present invention provides a light-emitting device, which includes a circuit board and a plurality of light-emitting elements fixed to the circuit board, the light-emitting elements including the light-emitting diode package provided in this application.

[0054] The light-emitting device of the present invention includes the light-emitting diode package provided in this application, and therefore the light-emitting device has good electrical yield and reliability.

[0055] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this invention, and the layout of the components may also be more complex.

[0056] Example 1

[0057] This embodiment provides a light-emitting diode package, such as Figure 2 and Figure 3 As shown, the LED package 100 of this embodiment includes a package substrate 110, a wiring layer 130, a plurality of light-emitting units 140, and a fill layer 150. The package substrate 110 has a front side 1101 and a back side 1102 disposed opposite to each other. The wiring layer 130 is located on one side of the front side 1101. The plurality of light-emitting units 104 are fixedly arranged on one side of the front side 1011 of the package substrate 110 and are electrically connected to the wiring layer 130.

[0058] In optional embodiments, the packaging substrate 110 can be selected from inorganic insulating substrates with a certain strength, such as glass, ceramic, or sapphire. To facilitate use by the client while ensuring good stability of the light-emitting diode package 100, the packaging substrate 110 is preferably glass, and its thickness is preferably greater than 10 μm, specifically 30 μm to 50 μm, 50 μm to 100 μm, or 100 μm to 300 μm.

[0059] In an optional embodiment, the light-emitting unit 140 mainly refers to a micron-sized light-emitting diode, with a width and length ranging from 2μm to 5μm, 5μm to 10μm, 10μm to 20μm, 20μm to 50μm, or 50μm to 100μm, and a thickness ranging from 2μm to 15μm, preferably 5μm to 10μm. In this embodiment, the light-emitting diode package 100 includes a first direction (i.e., Figure 3A first light-emitting unit 1401, a second light-emitting unit 1402, and a third light-emitting unit 1403 are spaced apart along the Y-direction. The first light-emitting unit 1401 can be a red light chip, the second light-emitting unit 1402 can be a green light chip, and the third light-emitting unit 1403 can be a blue light chip. The light-emitting units 140 are formed as RGB three-element pixels. Optionally, the thickness difference between the light-emitting units 140 is less than or equal to 5 μm, which can effectively improve the transfer yield of the light-emitting units 140 onto the packaging substrate 110, thereby improving the light emission effect of the package.

[0060] Each of the above-mentioned light-emitting units 140 includes a light-emitting epitaxial layer. Taking the first light-emitting unit 1401 as an example, refer to... Figure 4 An insulating protective layer 1405 located above the epitaxial layer, and an electrode structure formed above the insulating protective layer 1405.

[0061] like Figure 4 As shown, the light-emitting epitaxial layer includes a first conductivity type semiconductor layer 1401, an active layer 1402, and a second conductivity type semiconductor layer 1403 stacked sequentially. The first conductivity type semiconductor layer 1401, the active layer 1402, and the second conductivity type semiconductor layer 1403 may include Ш-V nitride semiconductors, such as nitride semiconductors like Al, Ga, and In. The first conductivity type semiconductor layer 1401 may include p-type impurities (e.g., Mg, Sr, Ba), and the second conductivity type semiconductor layer 1403 may include n-type impurities (e.g., Si, Ge, Sn). It is understood that the dopants in the first conductivity type semiconductor layer 1401 and the second conductivity type semiconductor layer 1403 may also be the opposite of those described above. The active layer 1402 may include a multiple quantum well (MQW) structure, and the desired wavelength can be emitted from the active layer 1402 by adjusting the composition ratio of the nitride semiconductors. The electrodes formed on the insulating protective layer 1405 include a first electrode 141 and a second electrode 142. The first electrode 141 is electrically connected to the first conductivity type semiconductor layer 1401, and the second electrode 142 is electrically connected to the second conductivity type semiconductor layer 1403. Optionally, the light-emitting unit 104 may include structures with other optimized functions. The side of the light-emitting epitaxial layer opposite to the first electrode 141 and the second electrode 142 is the light-emitting side of the light-emitting unit 104.

[0062] Still refer to Figure 4The first light-emitting unit 1411 has a mesa structure 1410 formed on its light-emitting epitaxial layer. This mesa structure 1410 is formed at the edge region or a corner of the light-emitting epitaxial layer, and is formed by sequentially etching a first conductive semiconductor layer 1401 and an active layer 1402 to expose a second conductive semiconductor layer 1403, or by further etching a portion of the second conductive semiconductor layer 1403. An insulating protective layer 1405 covers the exposed sidewalls of the light-emitting epitaxial layer, the surface of the exposed first conductive semiconductor layer 1401, and the surface of the second conductive semiconductor layer 1403 exposed at the mesa structure 1410. To enable the first light-emitting unit 1041 to emit light from the light-emitting side, a reflective layer 1406 is also formed above the insulating protective layer 1405. This reflective layer 1406 can be, for example, a DBR structure formed by alternating layers of two materials with different refractive indices, such as a DBR structure formed by alternating stacks of SiO2 / TiO2 (or Ti3O5). To enhance the reflective effect, the thickness of the reflective layer 1406 is typically between 0.1 μm and 10 μm.

[0063] An electrode structure is formed above the reflective layer 1406. Specifically, a first electrode 141 is formed above the first conductive semiconductor layer 1401. Through-holes are formed in the insulating protective layer 1405 and the reflective layer 1406 above the first conductive semiconductor layer 1401, and the first electrode 141 fills the through-holes to electrically connect with the first conductive semiconductor layer 1401. A second electrode 142 is formed above the mesa structure 1410 and electrically connected with the second conductive semiconductor layer 1403. To increase the lateral current spread on one side of the first conductive semiconductor layer 1401, a transparent conductive layer 1404 (e.g., an ITO layer) is formed above the first conductive semiconductor layer 1401, and the first electrode 141 is connected to the transparent conductive layer 1404 to achieve electrical connection with the first conductive semiconductor layer 1401.

[0064] Refer to this Figure 2 and Figure 3 A wiring layer 130 is formed on one side of the front surface 1101 of the packaging substrate 110. The wiring layer 130 includes a first portion 131 and a second portion 132 that are insulated from each other. The electrode structure side of the light-emitting unit 140 is connected to the wiring layer 130. Specifically, the first electrode 141 is electrically connected to the first portion 131, and the second electrode 142 is electrically connected to the second portion 132. A plurality of through-hole structures 120 are provided in the packaging substrate 110, for example, there can be 2, 4, or any desired number. The through-hole structure 120 penetrates the packaging substrate 110 along the thickness direction, and the through-hole structure 120 is filled with conductive material to form a conductive pillar 124, which is electrically connected to the wiring layer 130.

[0065] In one optional example, the same can be referred to Figure 2The through-hole structure 120 includes a first segment 121 extending along the thickness direction from one side of the front side 1101, and a second segment 122 extending along the thickness direction from one side of the back side 1102. The first segment 121 and the second segment 122 are connected at a connection 123, and the first segment 121 and the second segment 123 have the same aperture at the connection 123. Furthermore, the connection 123 has a minimum aperture. The aperture of the first segment 121 on the front side 1101 of the packaging substrate 110 and the aperture of the second segment on the back side 1102 can be the same or different. For example, the aperture of the first segment 121 can gradually increase from the connection 123 to the front side 1101 of the packaging substrate, while the aperture of the second segment 122 from the connection 123 to the back side 1102 of the packaging substrate 100 remains unchanged; or the aperture of the first segment 121 can remain unchanged from the connection 123 to the front side 1101 of the packaging substrate, while the aperture of the second segment 122 gradually increases from the connection 123 to the back side 1102 of the packaging substrate 100; or the aperture of the first segment 121 can gradually increase from the connection 123 to the front side 1101 of the packaging substrate, and the aperture of the second segment 122 also gradually increases from the connection 123 to the back side 1102 of the packaging substrate 100. By setting the connection 123 of the through-hole structure 120 to have a minimum aperture, that is, the minimum aperture of the through-hole structure 120 is located inside the packaging substrate 110, the aperture of the first segment 121 and the second segment 122 of the through-hole structure 120 can be set more flexibly, especially the aperture of the opening on the front side of the packaging substrate 110 and the aperture of the opening on the back side of the packaging substrate 110. This is beneficial to make different aperture designs according to the size of the actual product and the specific application scenario.

[0066] In further examples, such as Figure 2 As shown, the via structure 120 in the packaging substrate 110 has a first opening diameter R1 on the front side 1101 and a second opening diameter R2 on the back side 1102, where R1 < R2. Further, the via structure 120 includes a first segment 121 extending from the front side 1101 along the thickness direction and a second segment 122 extending from the back side 1102 along the thickness direction. The first segment 121 and the second segment 122 are connected at a connection point 123, and the first segment 121 and the second segment 123 have the same aperture at the connection point 123, or the difference in aperture between them at that point is less than 100 nm. The depth of the first segment 121 is D1, the depth of the second segment 122 is D2, and D1 < D2. In an optional example, the thickness of the packaging substrate 110 (i.e., the overall depth of the via structure 120) is further set to D0, where... D0≤D1≤ D0, D0≤D2≤ D0, further, D0≤D1≤ D0, D0≤D2≤ D0. As described above, the aperture and depth settings of the first segment 121 and the second segment 122 of the through-hole structure 120 are beneficial for effectively controlling the aperture of the through-hole structure 120. Specifically, when forming the through-hole structure 120, a step-by-step method is adopted, for example, the first segment 121 is formed from the front side 1101, and the second segment 122 is formed from the back side 1102, as follows. Figure 2 As shown, the aperture of the first segment 121 gradually decreases along the depth direction from the first aperture R1, and the aperture of the second segment 122 gradually decreases along the depth direction from the second aperture R2. Therefore, by controlling their respective depths, their apertures can be optimized, especially the first aperture R1 and the second aperture R2. This is beneficial for controlling the size of the packaging substrate 110, and further, it is beneficial for reducing the size of the package.

[0067] like Figure 2 and Figure 3 As shown, the first portion 131 of the wiring layer 130 is electrically connected to the first electrode 141 of each light-emitting unit 140, serving as the common electrode of the first electrodes 141 of the multiple light-emitting units 140; the second portion 132 is electrically connected to the second electrodes 142 of the multiple light-emitting units 104. Specifically, the second portion 132 includes a first sub-block 1321, a second sub-block 1322, and a third sub-block 1323 that are spaced apart from each other and insulated from each other. The first sub-block 1321 is in contact with the second electrode 142 of the first light-emitting unit 1401, the second sub-block 1322 is in contact with the second electrode 142 of the second light-emitting unit 1402, and the third sub-block 1323 is in contact with the second electrode 142 of the third light-emitting unit 1043. This arrangement enables individual control of each light-emitting diode and also helps to reduce the size of the package.

[0068] like Figure 2 As shown, the first light-emitting unit 1401, the second light-emitting unit 1402, and the third light-emitting unit 1403 are along the first direction (i.e., Figure 2 The first electrode 141 and the second electrode 142 of each light-emitting unit 140 are arranged sequentially at intervals along the second direction (i.e., the Y direction shown). Figure 2 The components are arranged in an insulated manner (as shown in the X direction). With the centerline of the package in the first direction as the boundary, the first electrodes 141 of the first light-emitting unit 1401 and the third light-emitting unit 1403 are located on the same side along the second direction, while the first electrode 141 of the second light-emitting unit 1402 is located on the opposite side along the second direction. A first portion 131 of the wiring layer 130 is electrically connected to the first electrodes 141 of each light-emitting unit and maintains a certain distance from the second electrodes 142 of each light-emitting unit to ensure mutual insulation.

[0069] Refer again Figure 3 The packaging substrate 110 has a plurality of through-hole structures 120 that correspond one-to-one with the first sub-block 1321, the second sub-block 1322, and the third sub-block 1323 of the first portion 131 and the second portion 132, respectively. For example... Figure 2 and Figure 3 As shown, a solder pad 170 is formed above the conductive pillars 124 on the back side 1102 of the packaging substrate 110. To protect the solder pad 170, a solder pad protection layer 171 is formed on the surface of the solder pad 170 to prevent defects such as oxidation and damage to the metal layer of the solder pad 170. This solder pad protection layer 171 is preferably a material layer that is oxidation-resistant and has stable performance. For example, it can be an Au layer or an OSP (organic solderability protectant). This solder pad protection layer 171 effectively protects the integrity and electrical reliability of the solder pads 170 of the wiring layer 105, thereby improving the reliability and stability of the light-emitting diode package 100.

[0070] In a top view of one side of the back surface 1102 of the packaging substrate 110, each solder pad 170 has a projected outline, i.e. Figure 3 The projected contours S11, S12, S13, and S14 are shown in the figures. The projected contours of the conductive vias 120 (i.e., conductive pillars 124) corresponding to each of the aforementioned pads 170 fall within the aforementioned projected contours of each pad 170. Although Figure 3 The projected outline of each solder pad 17609 is a polygonal structure. It can be understood that the projected outline of solder pad 170 can also be a circular structure; that is, solder pad 170 can be formed into a circular structure. Furthermore, the geometric center of the projection of this circular solder pad 170 can coincide with the geometric center of the projection of the conductive post 140. Similarly... Figure 3 As shown, the aforementioned solder pads 170 are spaced apart, with a spacing D3 between adjacent solder pads 170, where D3 ≥ 30 μm. Further, 200 μm ≥ D3 ≥ 50 μm, for example, 50 μm, 80 μm, 100 μm, 150 μm, etc. The setting of the relationship between the projected contours of the solder pads 170 and the conductive vias 120, as well as the setting of the spacing between adjacent solder pads 170, ensures, on the one hand, that the conductive post 124 is completely covered by the solder pads 170, ensuring the reliability of the electrical connection between them, thereby ensuring the electrical performance of the package and facilitating product size control. On the other hand, it ensures that there is sufficient spacing between adjacent solder pads 170 to prevent short circuits and other phenomena, ensuring the reliability of the LED package.

[0071] In optional embodiments, the wiring layer 130 can be a single-layer structure or a multi-layer structure. For example, it can be a single-layer structure formed by a single metal material or a multi-layer structure formed by multiple metal materials. The thickness of the wiring layer 130 is between 1 μm and 5 μm, for example, it can be 1.5 μm, 2 μm, 2.5 μm, etc. Further optionally, the wiring layer 130 is a double-layer structure formed by two metal materials, for example, including a first wiring layer 1301 and a second wiring layer 1302 stacked sequentially in the direction away from the light-emitting unit 140. The first wiring layer 1301, that is, the layer in contact with the first electrode 141 and the second electrode 142, includes at least a Ti layer; the second wiring layer 1302 located below the first wiring layer 1301 includes at least a Cu layer. The thickness of the first wiring layer 1301 is between 100 nm and 1000 nm, and the thickness of the second wiring layer 1302 is between 500 nm and 2000 nm. The Ti layer increases the adhesion between the wiring layer 130 and the first electrode 141 and the second electrode 142, improving the reliability and yield of the electrical connection. The Cu layer provides good electrical connection while saving costs.

[0072] like Figure 2 As shown, the filling layer 150 is located on the front side 1101 of the packaging substrate 110, covering the wiring layer 130 and filling between the light-emitting units 140 and between the first electrode 141 and the second electrode 142, exposing the light-emitting side of the light-emitting units 140. The filling layer 150 can be a light-absorbing material layer such as black glue to absorb the light radiated by each light-emitting unit 140 and prevent light crosstalk between adjacent light-emitting units 140 (e.g., color mixing or light interference). Optionally, the filling layer 150 can be a component formed by dispersing a black filler component with a particle size of no more than 1 μm in transparent or translucent materials such as silicone, epoxy resin, polyimide, low-temperature glass, polysiloxane, and polysilazane. The black filler component in the filling layer 150 includes, but is not limited to, carbon black, titanium nitride, iron oxide, magnetite, and iron powder.

[0073] The filling layer 150 covers at least 50% of the sidewall height of the light-emitting unit 140, preferably all sidewalls of the light-emitting unit 140, to prevent color mixing or light interference between adjacent light-emitting units 140, thereby improving the contrast of the light-emitting module. As an alternative embodiment, the thickness of the filling layer 150 can be greater than the thickness of the light-emitting unit 140, which can prevent light interference caused by light leakage from the bottom of the light-emitting unit 140. In optional embodiments, such as... Figure 2As shown, a transparent layer 160 may also be formed above the filler layer 150, which covers the filler layer 150 and each light-emitting unit 140. The transparent layer 160 is preferably an adhesive layer with good light transmission, or it may be a lens-like structure with light-concentrating effect, or it may be an adhesive layer doped with color-converting particles (phosphors or quantum dots), etc. Therefore, the transparent layer is beneficial to adjusting the light emission effect of the package.

[0074] Example 2

[0075] This embodiment provides a semiconductor light-emitting device, such as... Figure 5 and Figure 6 As shown, the light-emitting device 200 includes a circuit board 201 and a plurality of light-emitting elements 202 electrically connected to the circuit board 201. In this embodiment, the light-emitting elements 202 are semiconductor light-emitting elements provided in Embodiment 1. Similarly, as... Figure 6 As shown, the circuit board 210 has several sets of pads 205. The pad of each light-emitting element 202 is electrically connected to a set of pads 205. Additionally, a circuit layer 203 is provided in the circuit board 201, and the light-emitting element 202 is electrically connected to the circuit layer 203 via the pads 205. Figure 5 and Figure 6 As shown, the light-emitting device 200 may further include a housing 204 to protect the light-emitting element from external contamination or damage, while not affecting the light emission effect of the light-emitting element. The above-described configuration of the wiring layer and solder pads of the light-emitting diode package in this application increases the bonding force between the package and the solder pads, thereby improving the reliability of the device.

[0076] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A light-emitting diode package, characterized in that, include: A packaging substrate has a front side and a back side disposed opposite to each other. The packaging substrate has a plurality of conductive vias penetrating the packaging substrate along the thickness direction. The conductive vias have a first opening diameter at one end on the front side and a second opening diameter at one end on the back side. The first opening diameter is smaller than the second opening diameter. The wiring layer, located on the front side of the packaging substrate, includes a first part and a second part that are insulated from each other, and the conductive vias correspond one-to-one with the first part and the second part; Multiple light-emitting units are spaced apart on one side of the front surface. Each light-emitting unit includes a first electrode and a second electrode, which are electrically connected to the first part and the second part, respectively.

2. The light-emitting diode package according to claim 1, characterized in that, Along the thickness direction of the packaging substrate, the through-hole structure includes a first segment extending from the front side to the back side, and a second segment extending from the back side to the front side. The aperture of the first segment gradually decreases from the first opening aperture, and the aperture of the second segment gradually decreases from the second opening aperture. The first segment and the second segment have the same aperture at the connection point.

3. The light-emitting diode package according to claim 1, characterized in that, Along the thickness direction of the packaging substrate, the through-hole structure includes a first segment extending from the front side to the back side, and a second segment extending from the back side to the front side, wherein the through-hole has a minimum aperture at the junction of the first segment and the second segment.

4. The light-emitting diode package according to claim 2 or 3, characterized in that, The depth of the first segment is D1, and the depth of the second segment is D2, where D1 < D2.

5. The light-emitting diode package according to claim 2 or 3, characterized in that, It also includes a filling layer located on one side of the front side of the packaging substrate, covering the wiring layer and filling between the light-emitting units and between the first electrode and the second electrode, exposing the light-emitting side of the light-emitting unit, wherein the side of the light-emitting unit where the first electrode and the second electrode are located is the electrode side, and the side of the light-emitting unit opposite to the electrode side is the light-emitting side.

6. The light-emitting diode package according to claim 1, characterized in that, It also includes solder pads, and the conductive vias are filled with conductive layer material to form conductive pillars that are electrically connected to the wiring layer. The solder pads are located above the conductive pillars on the back side of the packaging substrate and are projected onto the plane on the back side of the packaging substrate. The projected outline of the conductive pillars is located within the projected outline of the solder pads.

7. The light-emitting diode package according to claim 6, characterized in that, The spacing between adjacent solder pads shall not be less than 30 μm.

8. The light-emitting diode package according to claim 1, characterized in that, The arrangement direction of the plurality of light-emitting units is defined as a first direction. The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit arranged sequentially along the first direction. The first electrode and the second electrode of each light-emitting unit are distributed at intervals in a second direction. The first part is electrically connected to the second electrode of the first light-emitting unit, the second light-emitting unit, and the second electrode of the third light-emitting unit. The first direction and the second direction intersect.

9. The light-emitting diode package according to claim 8, characterized in that, The second part includes a first sub-block, a second sub-block, and a third sub-block. The first sub-block is electrically connected to the first electrode of the first light-emitting unit, the second sub-block is electrically connected to the first electrode of the second light-emitting unit, and the third sub-block is electrically connected to the first electrode of the third light-emitting unit.

10. The light-emitting diode package according to claim 9, characterized in that, The conductive vias are configured in a one-to-one correspondence with the first sub-block, the second sub-block, and the third sub-block of the first part and the second part.

11. The light-emitting diode package according to claim 7, characterized in that, A protective layer is formed on the surface of the solder pad.

12. The light-emitting diode package according to claim 11, characterized in that, The protective layer of the solder pad is a metallic Au layer or an organic protective layer.

13. The light-emitting diode package according to claim 1, characterized in that, The packaging substrate is an insulating substrate.

14. The light-emitting diode package according to claim 1 or 13, characterized in that, The packaging substrate is a glass substrate or a ceramic substrate.

15. The light-emitting diode package according to claim 13, characterized in that, It also includes a transparent layer located above the light-emitting unit and the filling layer.

16. The light-emitting diode package according to claim 15, characterized in that, The light-emitting unit includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. The side of the second conductivity type semiconductor layer away from the active layer is the light-emitting side of the light-emitting unit, and the light-emitting unit is fixed to the transparent layer from the light-emitting side. A reflective layer is provided on the side of the first conductivity type semiconductor layer away from the active layer.

17. A light-emitting device, characterized in that, It includes a circuit board and a plurality of light-emitting elements fixed to the circuit board, wherein the light-emitting elements include the light-emitting diode package as described in any one of claims 1 to 16.

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