Method for adjusting cavity pressure of semiconductor equipment

Abstract

The invention provides a method for adjusting the cavity pressure of semiconductor equipment, and the method comprises the steps: obtaining and storing standard pressure time sequence data corresponding to a plurality of technological formulas in advance, and forming a standard pressure time sequence database; selecting corresponding standard pressure time sequence data from a standard pressure time sequence database according to the currently executed process formula; acquiring an actually measured pressure value of the process chamber in the process of executing the current process formula; and comparing the actually measured pressure value with a target pressure value of the standard pressure time sequence data at a corresponding time node, and if the actually measured pressure value deviates from a pressure tolerance range set based on the target pressure value of the corresponding time node, opening an exhaust valve of the process chamber, and adjusting gas higher than the atmospheric pressure is introduced into the process chamber through a gas supply pipeline. The problems that in the prior art, due to a fixed threshold value judgment mode and a passive gas path isolation mechanism, the sensitivity of abnormal cavity pressure recognition is insufficient, and the active pressure adjusting capacity is lacked are solved.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor devices, and in particular to a method for adjusting the cavity pressure of a semiconductor device. Background Technology

[0002] In semiconductor equipment, the regulation of cavity pressure during wafer fabrication significantly impacts the stability and safety of the equipment. Abnormal cavity pressure can be caused by various factors, such as gas supply imbalances resulting from mass flow controller malfunctions. Abnormal cavity pressure directly affects the cavity structure; excessively high or low pressures can subject the cavity to mechanical stresses exceeding design limits, leading to localized deformation or seal failure. Prolonged pressure runaway can also cause fatigue damage to the cavity, and in extreme cases, even trigger cracks or ruptures, seriously threatening equipment lifespan and production safety.

[0003] In existing technologies, the mainstream cavity pressure anomaly control strategies for semiconductor devices are pressure monitoring mechanisms based on fixed thresholds and threshold-triggered gas path isolation mechanisms. For example, when the cavity pressure is detected to exceed a preset fixed threshold range, passive protection mechanisms such as gas path isolation and valve group shutdown are used to prevent the cavity pressure from deviating further. However, these methods have significant limitations: First, they lack active pressure regulation capabilities. Especially when the cavity pressure is abnormal, simply shutting off the gas path is insufficient to effectively restore the cavity pressure balance and cannot reverse the already formed cavity pressure imbalance. Second, the fixed threshold judgment method is difficult to adapt to complex and variable process environments. Different process formulations and different time points within the same process formulation have different requirements for cavity pressure tolerance. The fixed threshold cannot be dynamically adjusted, which can easily lead to insufficient sensitivity or increased false positive rate in cavity pressure anomaly identification. Summary of the Invention

[0004] The purpose of this invention is to provide a method for regulating the cavity pressure of a semiconductor device, which solves the problems of insufficient sensitivity in identifying abnormal cavity pressure and lack of active pressure regulation capability caused by fixed threshold judgment methods and passive gas path isolation mechanisms in the prior art, thereby improving the dynamic adaptability of cavity pressure regulation and device safety.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution: A method for regulating cavity pressure in a semiconductor device, the semiconductor device including a process chamber configured to process a wafer based on a process recipe, the regulation method comprising: Pre-acquire and store standard pressure time series data corresponding to multiple process formulations to form a standard pressure time series database. The standard pressure time series data includes multiple target pressure values ​​corresponding to time nodes. Based on the currently executed process formulation, select the corresponding standard pressure time series data from the standard pressure time series database; Obtain the measured pressure value of the process chamber during the execution of the current process formula; The measured pressure value is compared with the target pressure value of the standard pressure time series data at the corresponding time node. If the measured pressure value deviates from the pressure tolerance range set based on the target pressure value at the corresponding time node, it is determined that there is a pressure anomaly. If an abnormal pressure is detected, the exhaust valve of the process chamber is opened, and regulating gas is introduced into the process chamber through the gas supply pipeline at a predetermined pressure value, wherein the predetermined pressure value is higher than atmospheric pressure.

[0006] In some embodiments, comparing the measured pressure value with the target pressure value of the standard pressure time series data at the corresponding time node includes: Obtain the measured pressure value at the current time point; Obtain the target pressure value corresponding to the current time point from the standard pressure time series data; Based on the target pressure value at the current time point, multiply it by the first preset ratio and the second preset ratio respectively to calculate the upper and lower threshold values ​​of the corresponding pressure tolerance range. Determine whether the measured pressure value at the current time point is within the pressure tolerance range formed by the upper limit threshold and the lower limit threshold; If the measured pressure value exceeds the pressure tolerance range, then a pressure anomaly is determined to exist.

[0007] In some embodiments, obtaining the target pressure value corresponding to the current time point from standard pressure time-series data includes: If a target pressure value corresponding to the current time point exists in the standard pressure time series data, then the target pressure value corresponding to the current time point is directly obtained. If it is determined that there is no target pressure value corresponding to the current time node in the standard pressure time series data, the target pressure value corresponding to the current time node is obtained by linear interpolation based on the target pressure values ​​of adjacent time nodes.

[0008] In some embodiments, the first preset ratio is greater than 1 and less than or equal to 1.1, and the second preset ratio is greater than or equal to 0.9 and less than 1.

[0009] In some embodiments, the predetermined pressure value ranges from 806.5 torr to 868.8 torr.

[0010] In some embodiments, the semiconductor device further includes a first pressure gauge and a second pressure gauge for acquiring pressure measurements of the process chamber, wherein the step of acquiring the measured pressure values ​​of the process chamber includes: Obtain the first and second pressure measurement values ​​at the current time point, and determine whether the first and second pressure measurement values ​​deviate from the pressure tolerance range set based on the target pressure value at the corresponding time point. If both the first pressure measurement value and the second pressure measurement value deviate from the pressure tolerance range, then the first pressure measurement value or the second pressure measurement value is selected as the measured pressure value. If only one of the first pressure measurement value and the second pressure measurement value is within the pressure tolerance range, then the pressure measurement value within the pressure tolerance range shall be taken as the measured pressure value. If both the first pressure measurement value and the second pressure measurement value are determined to be within the pressure tolerance range, then the first pressure measurement value or the second pressure measurement value is selected as the measured pressure value.

[0011] In some embodiments, a flow limiting valve is provided on the gas supply line, the inlet working pressure of which is in the range of 0.9 psig to 2.1 psig.

[0012] In some embodiments, the step of introducing conditioning gas into the process chamber through a gas supply line includes: The current measured pressure value of the process chamber is continuously acquired, and it is determined whether the current measured pressure value has entered the preset safe pressure range. If the current measured pressure value is determined to be within the preset safe pressure range, then the exhaust valve is closed and the supply of regulating gas is stopped.

[0013] In some embodiments, the conditioning gas entering the process chamber through the gas supply line is an inert gas.

[0014] In some embodiments, the semiconductor device further includes a heating assembly configured to heat the process chamber; the chamber pressure regulation method further includes shutting down the heating assembly when an abnormal pressure is detected.

[0015] Compared with the prior art, the present invention has the following advantages: After determining that the cavity pressure is abnormal, the present invention actively adjusts the overpressure or underpressure abnormality by opening the exhaust valve and simultaneously introducing regulating gas at a predetermined pressure value higher than atmospheric pressure. This coordinated operation can quickly adjust the cavity pressure to near atmospheric pressure, avoiding the accumulation of mechanical stress in the process cavity due to prolonged abnormal pressure, and reducing the risk of cavity structure deformation or breakage.

[0016] This invention achieves dynamic setting and real-time matching of pressure tolerance range by establishing standard pressure time series data with different time nodes for each process formulation. This method can accurately identify abnormal trends in the early stage of pressure deviation without waiting for the cavity pressure to approach the mechanical strength limit of the cavity before triggering protection, thereby significantly extending the response time that can be used for regulation and improving the initiative and safety of pressure anomaly management. Attached Figure Description

[0017] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort: Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of the present invention; Figure 2 A flowchart of a cavity pressure regulation method provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the gas supply pipeline design provided in an embodiment of the present invention. Detailed Implementation

[0018] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0019] The semiconductor device of the present invention is a semiconductor device with cavity pressure regulation function, which can be used to regulate the pressure of the process chamber during semiconductor manufacturing. The semiconductor device includes, but is not limited to, epitaxial equipment, etching equipment or pre-cleaning equipment. The epitaxial equipment includes, but is not limited to, atmospheric pressure epitaxial equipment or depressurized pressure epitaxial equipment. The etching equipment includes, but is not limited to, inductively coupled plasma etching equipment or capacitively coupled plasma etching equipment.

[0020] like Figure 1As shown, in one embodiment, the semiconductor device may be an epitaxial device; the epitaxial device includes a process chamber 100 for processing one or more wafers W, including depositing material on the upper surface of the wafers W. The process chamber 100 has an upper chamber wall 101 at the top, a lower chamber wall 102 at the bottom, and sidewalls extending between the upper chamber wall 101 and the lower chamber wall 102. Optionally, the upper chamber wall 101 and the lower chamber wall 102 are made of an optically transparent or translucent material that is transparent to thermal energy (such as quartz material that is transparent to a specific infrared band).

[0021] The process chamber 100 includes an air inlet 103 at one end and an exhaust 104 at the other end. The interior of the process chamber 100 includes an air inlet region corresponding to the air inlet 103, an exhaust region corresponding to the exhaust 104, and a reaction region located between the air inlet region and the exhaust region. The wafer W is located within the reaction region, such as... Figure 1 As indicated by the middle arrow, the reaction gas used for deposition flows into the interior space of the cavity from the inlet opening 103, performs the chemical vapor deposition process in the reaction area, and exits the cavity from the exhaust opening 104.

[0022] Please continue reading. Figure 1 The lower cavity wall 102 is provided with a downwardly extending extension tube, which is used to accommodate the rotating shaft 105 extending into the internal space of the process chamber 100. The top of the rotating shaft 105 includes multiple support arms 108 for supporting the base 109 and the wafer W on the base 109, so as to drive the base 109 and the wafer W supported by the base 109 to rotate in the reaction region, thereby ensuring the uniformity of thin film deposition on the wafer W. The semiconductor device also includes a driver (not shown in the figure), which is connected to the rotating shaft 105 and configured to drive the rotating shaft 105 to rotate. The two ends of the support arms 108 are respectively connected to the base 109 and the rotating shaft 105, so that the rotating shaft 105 can drive the base 109 to rotate through the support arms 108. Optionally, the rotating shaft 105 may be made of quartz to reduce the risk of particle contamination.

[0023] Furthermore, the semiconductor device also includes multiple heating components 106 that provide thermal radiation to the process chamber 100 and the wafer W. Each of the heating components 106 is disposed outside the process chamber 100 to heat the process chamber 100 and the wafer W inside. To facilitate understanding of temperature changes within the process chamber 100, the semiconductor device also includes several thermometers. These thermometers are disposed at the top and bottom of the process chamber 100 to collect temperature data at a preset sampling period. The thermometer at the top of the process chamber 100 is a first thermometer 107, used to measure the top surface temperature of the substrate or wafer. The thermometer at the bottom of the process chamber 100 is a second thermometer 110, used to measure the bottom surface temperature of the substrate. The heating assembly 106 includes a first heating assembly and a second heating assembly. The first heating assembly and the second heating assembly are respectively disposed at the top and bottom of the process chamber 100. The first heating assembly located at the top heats the wafer supported on the front side of the base 109, and the second heating assembly located at the bottom heats the back side of the base 109.

[0024] Specifically, heating components 106 are provided above and below the process chamber 100. These heating components 106 provide thermal radiation to the process chamber 100 and its wafer W, raising the required process temperature so that the reactive gases in the process chamber 100 undergo thermal decomposition, thereby depositing a thin film material on the upper surface of the wafer W. Simultaneously, a thermometer is used to measure the temperature inside the process chamber 100 in real time to control the process progress. Optionally, the thin film material deposited on the upper surface of the wafer W can be a semiconductor material such as silicon and germanium, or it can include other doped materials such as group III, group IV, and / or group V materials.

[0025] Optionally, the heating element 106 is a high-intensity tungsten filament lamp with a transparent quartz shell and containing a halogen gas such as iodine. Only a small portion of the radiant heat energy generated by this high-intensity tungsten filament lamp is absorbed by the upper cavity wall 101 and lower cavity wall 102 of the process chamber 100, ensuring that the heat energy generated by each heating element 106 is maximized and transferred to the wafer W and reaction gas within the process chamber 100. Of course, the heating element 106 can also be other devices capable of thermal radiation, and the present invention does not limit this.

[0026] In existing technologies, cavity pressure anomaly protection strategies for semiconductor devices generally lack proactive pressure regulation capabilities. The commonly used protection mechanism isolates the gas path by sealing the inlet opening 103 and the exhaust opening 104 when the pressure within the process chamber 100 exceeds a preset fixed threshold range. While this method can suppress further deviations in cavity pressure to some extent, it cannot actively restore the cavity pressure to the normal range, resulting in the process chamber 100 remaining in an abnormal pressure state for an extended period. This passive handling strategy increases the risk of abnormal mechanical stress on the cavity structure (such as the upper cavity wall 101, lower cavity wall 102, and sidewalls), potentially leading to serious accidents such as cavity deformation or even breakage in extreme cases. Furthermore, existing technologies typically use a fixed threshold range based on the cavity's mechanical strength limit to determine whether the cavity pressure is abnormal. Such fixed threshold ranges are often quite lenient, requiring the actual cavity pressure to approach the cavity's tolerance limit before triggering protection, resulting in a delayed response. Once a cavity pressure anomaly occurs, the system must complete pressure adjustment within a very short time; otherwise, the cavity faces the risk of rupture.

[0027] like Figure 2 As shown, to solve the above problems, the present invention proposes a method for adjusting the cavity pressure of a semiconductor device, the semiconductor device including a process chamber 100 configured to process a wafer W based on a process recipe, the adjustment method comprising: S1. Pre-acquire and store standard pressure time series data corresponding to multiple process formulations to form a standard pressure time series database. The standard pressure time series data includes multiple target pressure values ​​corresponding to time nodes. Here, a process recipe refers to a set of pre-defined, repeatable process parameters for performing specific process steps (such as thin film deposition, etching, and cleaning) on ​​a semiconductor device; the process parameters included in the process parameter set can be set by those skilled in the art, for example, process gas flow rate parameters, chamber temperature parameters, chamber pressure parameters, etc. Specifically, for each process formulation, denoted as R x (where x is the formula number, for example R1, R2, R3, …, R n When the semiconductor device is in a normal and stable operating state, the process formula R is executed. x And throughout its complete process cycle, a series of time points (t1, t2, t3, ..., t) are collected at preset sampling intervals. m The actual pressure measurement values ​​(P1, P2, P3, ..., P) of the corresponding process chamber 100 m ); The collected multiple data points (t) i , P iThe process formulation R is formed by fitting the data or directly using it as a discrete sequence. x The corresponding standard pressure-time relationship curve, i.e., the standard pressure time series data; this set of standard pressure time series data is then stored in the storage unit of the control system of the semiconductor device; by summarizing all process recipes R1 to R... n The standard pressure time series data is used to construct the standard pressure time series database; the standard pressure time series database supports access via recipe number R x It serves as an index for real-time querying and data retrieval, providing a precise pressure control benchmark for subsequent process execution; S2. Based on the currently executed process formula, select the corresponding standard pressure time series data from the standard pressure time series database; Specifically, the standard pressure time series database pre-stores multiple process formulations, such as process formulations R1, R2, R3, …, R n Each process recipe is associated with a set of standard pressure timing data established under its process parameters; when the semiconductor device runs a specific process recipe, such as process recipe R3, the control system retrieves and calls the corresponding standard pressure timing data in the standard pressure timing database as the benchmark for subsequent real-time pressure monitoring. S3. Obtain the measured pressure value P of the process chamber 100 during the execution of the current process formula. a ; This step involves using a pressure sensor to collect the actual pressure inside the process chamber 100 at preset sampling intervals, and transmitting the measured pressure value to the control system in real time. S4. The measured pressure value P a Compared with the target pressure value at the corresponding time node of the standard pressure time series data, if the measured pressure value P a If the pressure deviates from the pressure tolerance range set based on the target pressure value at the corresponding time point, it is determined that there is a pressure anomaly; Specifically, let the current time be t. i Get the current time t i The measured pressure value P a Time t is obtained by querying the standard pressure time series data. i The corresponding target pressure value P i Based on the target pressure value P i Set a pressure tolerance range, if the measured pressure value P a If the pressure is not within the stated pressure tolerance range, then the time t is determined to be... i An abnormal pressure is present; S5. If an abnormal pressure is detected, the exhaust valve of the process chamber 100 is opened, and regulating gas is introduced into the process chamber 100 through the gas supply pipeline at a predetermined pressure value, wherein the predetermined pressure value is higher than atmospheric pressure; setting a gas supply pressure higher than atmospheric pressure can ensure that the regulating gas can continuously and stably flow into the process chamber 100 under the pressure difference drive.

[0028] Compared with the prior art, the semiconductor device cavity pressure regulation method provided by the present invention has at least the following technical effects: To address the problem that existing technologies cannot restore chamber pressure by relying solely on gas path isolation, this invention, upon determining an abnormal pressure, opens the exhaust valve and simultaneously introduces regulating gas at a pressure higher than atmospheric pressure to actively regulate overpressure or underpressure abnormalities. This coordinated operation can quickly and reliably regulate the chamber pressure to near atmospheric pressure, preventing the process chamber 100 from accumulating mechanical stress due to prolonged abnormal pressure conditions, and reducing the risk of deformation or breakage of the chamber structure. To address the response lag problem caused by preset fixed pressure limit thresholds in existing technologies, this invention establishes standard pressure time-series data containing different time points for each process formulation, thereby achieving dynamic setting and real-time matching of pressure tolerance range. This method can accurately identify abnormal trends in the early stages of pressure deviation without waiting for the cavity pressure to approach the mechanical strength limit of the cavity before triggering protection, thus significantly extending the response time available for regulation and improving the initiative and safety of pressure anomaly management.

[0029] Preferably, in step S5, the exhaust valve is fully open; abnormal chamber pressure includes two situations: overpressure and underpressure, and the pressure regulation mechanisms for the two situations are as follows: 1. If it is an overpressure anomaly (i.e., the measured pressure value P) a (above the upper limit of the pressure tolerance range) When the exhaust valve is fully opened, high-speed pressure relief can be achieved, and the overpressured gas in the chamber is quickly discharged; at the same time, the introduced regulating gas helps to dilute and replace the process gas, and the synergistic effect of exhaust makes the chamber pressure drop rapidly and approach atmospheric pressure; 2. If it is an underpressure abnormality (i.e., the measured pressure value P) a (below the lower limit of the pressure tolerance range) Although the exhaust valve is fully open, the pressure of the incoming regulating gas is higher than the atmospheric pressure and the current cavity pressure. The gas is continuously injected into the cavity under the positive pressure difference, thereby gradually increasing the internal pressure of the process cavity 100, causing the cavity pressure to gradually rise and approach the atmospheric pressure. In other words, regardless of overpressure or underpressure, through the coordinated operation of opening the exhaust valve and introducing regulating gas, the internal pressure of the process chamber 100 will eventually stabilize to near atmospheric pressure, thereby protecting the safety of the chamber.

[0030] Preferably, the predetermined pressure value ranges from 806.5 torr to 868.8 torr; this pressure range has been optimized and verified, and can adjust the internal pressure of the process chamber 100 to near atmospheric pressure in a short time.

[0031] Optionally, in step S4, the measured pressure value P is... a The comparison with the target pressure value at the corresponding time point of the standard pressure time series data includes: S41. Obtain the current time node t i The measured pressure value P a ; S42. Obtain the value relative to the current time node t from the standard pressure time series data. i The corresponding target pressure value P i ; S43, Based on the current time node t i Target pressure value P i The upper and lower threshold values ​​of the corresponding pressure tolerance range are calculated by multiplying the values ​​by the first preset ratio and the second preset ratio, respectively; wherein the first preset ratio is greater than 1 and less than or equal to 1.1, and the second preset ratio is greater than or equal to 0.9 and less than 1. S44. Determine the current time node t i The measured pressure value P a Whether it is within the pressure tolerance range formed by the upper threshold and the lower threshold; S45. If the measured pressure value P a If the pressure exceeds the specified pressure tolerance range, an abnormal pressure is determined to exist.

[0032] Optionally, in step S42, the step of obtaining the data from the standard pressure time series data relative to the current time node t... i The corresponding target pressure values ​​include: If a target pressure value corresponding to the current time point exists in the standard pressure time series data, then the target pressure value corresponding to the current time point is directly obtained. If it is determined that there is no target pressure value corresponding to the current time node in the standard pressure time series data, the target pressure value corresponding to the current time node is obtained by linear interpolation based on the target pressure values ​​of adjacent time nodes.

[0033] Optionally, the semiconductor device further includes a first pressure gauge and a second pressure gauge for acquiring pressure measurements of the process chamber, wherein the step of acquiring the measured pressure values ​​of the process chamber includes: Obtain the first and second pressure measurement values ​​at the current time point, and determine whether the first and second pressure measurement values ​​deviate from the pressure tolerance range set based on the target pressure value at the corresponding time point. If both the first pressure measurement value and the second pressure measurement value deviate from the pressure tolerance range, then the first pressure measurement value or the second pressure measurement value is selected as the measured pressure value. If only one of the first pressure measurement value and the second pressure measurement value is within the pressure tolerance range, then the pressure measurement value within the pressure tolerance range shall be taken as the measured pressure value. If both the first pressure measurement value and the second pressure measurement value are determined to be within the pressure tolerance range, then the first pressure measurement value or the second pressure measurement value is selected as the measured pressure value.

[0034] By employing a redundant design with dual pressure gauges, reliable pressure data can be provided by the other normally functioning pressure gauge when one pressure gauge drifts, is damaged, or has an abnormal reading. This avoids erroneous triggering of the chamber pressure protection or failure to detect abnormal chamber pressure in a timely manner due to a single pressure gauge failure. By comparing the pressure measurements of the two pressure gauges with the pressure tolerance range, the pressure gauge with abnormal readings can be identified. When only one pressure gauge has abnormal data, the system can automatically adopt the data from the normal pressure gauge, achieving soft isolation of the faulty pressure gauge.

[0035] Optionally, the step of introducing conditioning gas into the process chamber 100 through the gas supply pipeline includes: The current measured pressure value of the process chamber 100 is continuously acquired, and it is determined whether the current measured pressure value has entered the preset safe pressure range. If the current measured pressure value is determined to be within the preset safe pressure range, then the exhaust valve is closed and the supply of regulating gas is stopped.

[0036] Optionally, the regulating gas entering the process chamber 100 through the gas supply pipeline is an inert gas, including but not limited to nitrogen, argon and other inert gases; inert gases have extremely high chemical stability and are not prone to chemical reactions with other substances in the process chamber 100, thus avoiding process contamination or equipment damage caused by gas reactions.

[0037] Optionally, the cavity pressure regulation method further includes shutting off the heating component 106 when an abnormal pressure is detected. Although the regulating gas introduced into the process chamber 100 in this invention is an inert gas, some of the regulating gas will still react with the process chamber 100 at high temperatures. For example, nitrogen will corrode the cavity at high temperatures. Therefore, shutting off the heating component 106 and introducing the regulating gas can reduce the cavity temperature and prevent the regulating gas from reacting with the process chamber 100 at high temperatures.

[0038] like Figure 3 As shown, for the gas supply pipeline design, Figure 3 One implementation method is shown; The gas supply pipeline includes a main process gas pipeline, a main regulating gas pipeline, a secondary process gas pipeline, and a secondary regulating gas pipeline; the main process gas pipeline is connected to the secondary process gas pipeline, and the main regulating gas pipeline is connected to both the secondary process gas pipeline and the secondary regulating gas pipeline; several gas flow regulators are installed on the main process gas pipeline, the main regulating gas pipeline, the secondary process gas pipeline, and the secondary regulating gas pipeline. The main process gas pipeline includes a gas supply source (not shown), a first gas path regulator 160, and a first mass flow meter 161 connected in sequence; the first gas path regulator 160 is used to control the flow rate of the process gas, and the first mass flow meter 161 is used to measure the mass flow rate of the process gas. The regulating gas main pipeline includes a gas source (not shown), a regulating gas main inlet gas path 114, a first regulating gas distribution path, and a second regulating gas distribution path. The gas source is connected to one end of the regulating gas main inlet gas path 114, and the other end of the regulating gas main inlet gas path 114 is connected to the first regulating gas distribution path and the second regulating gas distribution path, respectively. A flow limiting valve 115 and a second gas path regulator 111 are provided on the first regulating gas distribution path. The inlet working pressure range of the flow limiting valve is 0.9 psig to 2.1 psig to control the gas supply pressure of the gas supply pipeline within a reasonable range. A gas path selector 112 and a third gas path regulator 113 are provided on the second regulating gas distribution path. The flow capacity of the third gas path regulator 113 is configured to be greater than that of the second gas path regulator 111. The two respectively enable the second regulating gas distribution path and the first regulating gas distribution path to form a high-flow-rate and a low-flow-rate regulating gas regulating branch. The gas path selector 112 is used to control the on / off state of the second regulating gas distribution path. The process gas sub-pipeline includes a process gas connecting gas path, a first process gas branch gas path, a second process gas branch gas path, and a third process gas branch gas path. The process gas connecting gas path is connected to the first process gas branch gas path, the second process gas branch gas path, and the third process gas branch gas path, respectively. A second mass flow meter 122 and a fourth gas path regulator 123 are installed on the process gas connecting gas path. A first flow meter 130 and a fifth gas path regulator 131 are installed on the first process gas branch gas path. A second flow meter 132 and a sixth gas path regulator 133 are installed on the second process gas branch gas path. A third flow meter 134 and a seventh gas path regulator 135 are installed on the third process gas branch gas path. The process gas sub-pipeline is connected to the process chamber 100. The connection position of the process gas sub-pipeline to the process chamber 100 can be selected by those skilled in the art according to production needs. For example, the process gas sub-pipeline can introduce gas into the process chamber 100 through the gas inlet 103. The regulating gas sub-pipe is equipped with a third mass flow meter 120 and an eighth gas path regulator 121. The regulating gas sub-pipe is connected to the process chamber 100. The connection position between the regulating gas sub-pipe and the process chamber 100 can be selected by those skilled in the art according to production needs. For example, the regulating gas can be introduced from the liner. When the pressure gauge detects an abnormal pressure in the process chamber 100, the main process gas pipeline is closed, and the first regulating gas branch line in the main regulating gas pipeline is opened, allowing the regulating gas to reach the process gas secondary pipeline and the inlet of the secondary regulating gas pipeline through the main regulating gas pipeline. At this time, the ability of the regulating gas to pass through the first process gas branch line, the second process gas branch line, and the third process gas branch line can be controlled by adjusting the fourth gas path regulator 123; the ability of the regulating gas to pass through the secondary regulating gas pipeline can also be controlled by adjusting the eighth gas path regulator 121. Those skilled in the art can select to introduce regulating gas into the process chamber 100 from the secondary process gas pipeline and / or the secondary regulating gas pipeline according to production needs. An exhaust valve 150 is provided on the exhaust pipe, and the exhaust valve 150 is connected to an exhaust treatment assembly 151 for treating exhaust gas through an exhaust pipe.

[0039] It should be noted that, Figure 3 The gas supply pipeline arrangement shown is only one of the preferred embodiments of the present invention, and the present invention does not specifically limit it. Those skilled in the art can, without creative effort, make adaptive adjustments to the number, direction, connection method of the pipelines, and the type, number, and installation position of the control valves according to factors such as system pressure level, flow requirements, and spatial layout. Such equivalent modifications all fall within the scope of the technical concept of the present invention.

[0040] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, the term "connection" in this document indicates a direct connection between A and B, or an indirect connection between A and B, such as an indirect connection between A and B via C, or even via C and D, or more components. The connection between A and B can be integral or separate, detachable or fixed. The term "optional" in this document indicates that the technical feature can be combined with or not combined with any feature in the document.

[0041] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method for regulating the cavity pressure of a semiconductor device, the semiconductor device comprising a process chamber configured to process a wafer based on a process recipe, characterized in that, The adjustment method includes: Pre-acquire and store standard pressure time series data corresponding to multiple process formulations to form a standard pressure time series database. The standard pressure time series data includes multiple target pressure values ​​corresponding to time nodes. Based on the currently executed process formulation, select the corresponding standard pressure time series data from the standard pressure time series database; Obtain the measured pressure value of the process chamber during the execution of the current process formula; The measured pressure value is compared with the target pressure value of the standard pressure time series data at the corresponding time node. If the measured pressure value deviates from the pressure tolerance range set based on the target pressure value at the corresponding time node, it is determined that there is a pressure anomaly. If an abnormal pressure is detected, the exhaust valve of the process chamber is opened, and regulating gas is introduced into the process chamber through the gas supply pipeline at a predetermined pressure value, wherein the predetermined pressure value is higher than atmospheric pressure.

2. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, The step of comparing the measured pressure value with the target pressure value of the standard pressure time series data at the corresponding time node includes: Obtain the measured pressure value at the current time point; Obtain the target pressure value corresponding to the current time point from the standard pressure time series data; Based on the target pressure value at the current time point, multiply it by the first preset ratio and the second preset ratio respectively to calculate the upper and lower threshold values ​​of the corresponding pressure tolerance range. Determine whether the measured pressure value at the current time point is within the pressure tolerance range formed by the upper limit threshold and the lower limit threshold; If the measured pressure value exceeds the pressure tolerance range, then a pressure anomaly is determined to exist.

3. The method for adjusting the cavity pressure of a semiconductor device as described in claim 2, characterized in that, The step of obtaining the target pressure value corresponding to the current time point from standard pressure time series data includes: If a target pressure value corresponding to the current time point exists in the standard pressure time series data, then the target pressure value corresponding to the current time point is directly obtained. If it is determined that there is no target pressure value corresponding to the current time node in the standard pressure time series data, the target pressure value corresponding to the current time node is obtained by linear interpolation based on the target pressure values ​​of adjacent time nodes.

4. The method for adjusting the cavity pressure of a semiconductor device as described in claim 2, characterized in that, The first preset ratio is greater than 1 and less than or equal to 1.1, and the second preset ratio is greater than or equal to 0.9 and less than 1.

5. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, The predetermined pressure value ranges from 806.5 torr to 868.8 torr.

6. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, The semiconductor device further includes a first pressure gauge and a second pressure gauge for acquiring pressure measurements of the process chamber, wherein the step of acquiring the measured pressure values ​​of the process chamber includes: Obtain the first and second pressure measurement values ​​at the current time point, and determine whether the first and second pressure measurement values ​​deviate from the pressure tolerance range set based on the target pressure value at the corresponding time point. If both the first pressure measurement value and the second pressure measurement value deviate from the pressure tolerance range, then the first pressure measurement value or the second pressure measurement value is selected as the measured pressure value. If only one of the first pressure measurement value and the second pressure measurement value is within the pressure tolerance range, then the pressure measurement value within the pressure tolerance range shall be taken as the measured pressure value. If both the first pressure measurement value and the second pressure measurement value are determined to be within the pressure tolerance range, then the first pressure measurement value or the second pressure measurement value is selected as the measured pressure value.

7. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, A flow limiting valve is installed on the gas supply line, and the inlet working pressure range of the flow limiting valve is 0.9 psig to 2.1 psig.

8. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, The step of introducing conditioning gas into the process chamber through the gas supply pipeline includes: The current measured pressure value of the process chamber is continuously acquired, and it is determined whether the current measured pressure value has entered the preset safe pressure range. If the current measured pressure value is determined to be within the preset safe pressure range, then the exhaust valve is closed and the supply of regulating gas is stopped.

9. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, The regulating gas entering the process chamber through the gas supply pipeline is an inert gas.

10. The method for adjusting the cavity pressure of a semiconductor device as described in claim 1, characterized in that, The semiconductor device further includes a heating assembly configured to heat the process chamber; the chamber pressure regulation method further includes shutting down the heating assembly when an abnormal pressure is detected.

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