Large warping wafer processing method

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and discloses a large warping wafer processing method. According to the large-warpage wafer processing method, a large-warpage wafer processing device is adopted to process a large-warpage wafer, the large-warpage wafer processing device comprises an adsorption unit and a pressing unit, the adsorption unit comprises a first connecting piece, a first suction cup and a second suction cup, the upper end face of the first suction cup is sequentially divided into a first adsorption area and a second adsorption area from inside to outside, and the pressing unit is arranged on the first adsorption area. The pressing unit comprises a second connecting piece, a first pressing and abutting piece and a second pressing and abutting piece. According to the large-warpage wafer processing method, the large-warpage wafer is pressed and flattened in a regional stepped manner through the large-warpage wafer processing device, so that local stress concentration or incomplete pressing of the wafer by a single edge pressing unit when the edge of the large-warpage wafer is pressed by the single edge pressing unit can be effectively avoided; and therefore, the flat-absorbing effect on the large-warping wafer is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a large warping wafer processing method. BACKGROUND

[0002] In the field of advanced packaging, in order to realize high-density integration, wafers usually need to be ground to an ultra-thin thickness (for example, below 20 μm). Such ultra-thin wafers often warp due to mechanical stress and material properties. In the process of adsorption and transfer, a gap is formed between the wafer and the adsorption platform, resulting in uneven adsorption force, transmission instability, and even wafer breakage. This not only reduces production yield, but also increases manufacturing cost.

[0003] Wafers with slight warping are usually pressed flat before being adsorbed and transferred. However, when the wafer warping is large (commonly known as "large warping wafer"), the deformation gradient of the wafer is also large, which easily causes local stress concentration, resulting in wafer cracking or breaking, or incomplete wafer pressing, which leads to poor flatness of the large warping wafer. SUMMARY

[0004] The purpose of the present application is to provide a large warping wafer processing method to solve the technical problem that the existing wafer flattening and fixing device easily causes large warping wafers to crack and break or have poor flatness.

[0005] To achieve this purpose, the present application adopts the following technical solutions:

[0006] A large warping wafer processing method, wherein a large warping wafer processing device is used to process a large warping wafer, the large warping wafer processing device includes an adsorption unit and a pressing unit, the adsorption unit includes a first connecting piece, a first suction cup and a second suction cup, the first suction cup is connected to the first connecting piece, a through hole is formed in the center of the first suction cup, the second suction cup is movably arranged in the through hole and the axial position of the second suction cup along the through hole is adjustable, the upper end surface of the first suction cup is divided into a first adsorption area and a second adsorption area from inside to outside; the pressing unit can be located above the adsorption unit and includes a second connecting piece, a first pressing piece and a second pressing piece, the first pressing piece is connected to the second connecting piece in a lifting manner, and the second pressing piece is connected to the second connecting piece in a lifting manner.

[0007] The large warping wafer processing method includes the following steps:

[0008] S1, control the pressing unit to move from the upper side of the adsorption unit to avoid the adsorption unit;

[0009] S2. Control the second suction cup to rise along the axial direction of the through hole. After the second suction cup adsorbs the large warped wafer from the external device, control the second suction cup to descend along the axial direction of the through hole until it is flush with the upper end face of the first suction cup.

[0010] S3. Control the pressing unit to move above the adsorption unit and control the pressing unit to descend to a preset position;

[0011] S4. Control the first pressing member to descend and press against the portion of the large warped wafer located above the first adsorption area, while controlling the first adsorption area to adsorb the bottom of the portion of the large warped wafer located above the first adsorption area.

[0012] S5. Control the second pressing member to descend and press against the portion of the large warped wafer located above the second adsorption region, while simultaneously controlling the second adsorption region to adsorb the bottom of the portion of the large warped wafer located above the second adsorption region.

[0013] Optionally, the large warpage wafer processing apparatus further includes a detection unit connected to the first external rack, the detection unit being configured to detect the flatness of the wafer;

[0014] The method for processing large warpage wafers also includes the following steps:

[0015] S6. Use the detection unit to detect the flatness of the large warp wafer.

[0016] Optionally, step S6 includes:

[0017] S61. The detection unit detects whether the flatness of the large warp wafer is up to standard;

[0018] If so, the wafer is deemed a qualified product;

[0019] If not, proceed to step S7, the warp adjustment procedure.

[0020] Optionally, step S7 includes the following steps:

[0021] S71. Check whether the location of the wafer flatness defect is relatively close to the center of the wafer;

[0022] If so, proceed to step S72;

[0023] If not, proceed to step S73;

[0024] S72. Adjust the adsorption force of the first adsorption zone; and / or, adjust the pressing force of the first pressing member;

[0025] S73. Adjust the adsorption force of the second adsorption zone; and / or, adjust the pressure of the second pressing member.

[0026] Optionally, the adsorption unit further includes a vacuum path, which includes a first branch gas path and a second branch gas path. The upper end face of the first adsorption area is provided with a first adsorption groove communicating with the first branch gas path, and the upper end face of the second adsorption area is provided with a second adsorption groove communicating with the second branch gas path. The gas pressure of the first branch gas path and the second branch gas path can be adjusted independently.

[0027] In step S4, the first branch gas path is activated, causing the first adsorption region to adsorb the bottom of the portion of the large warped wafer located above the first adsorption region.

[0028] In step S5, the second branch gas path is activated, causing the second adsorption region to adsorb the bottom of the portion of the large warped wafer located above the second adsorption region.

[0029] Optionally, the vacuum path further includes a third branch air path, and the upper end face of the second suction cup is provided with an adsorption hole communicating with the third branch air path;

[0030] In step S2, after the second suction cup rises along the axial direction of the through hole, the third branch air path is activated, causing the second suction cup to adsorb the large warped wafer from the external device.

[0031] Optionally, the pressing unit further includes a first driving member, which is connected to the second connecting member and its output end is connected to the first pressing member;

[0032] In step S4, the first pressing member is lowered by the first driving member.

[0033] Optionally, the pressing unit further includes a second driving member, which is connected to the second connecting member and its output end is connected to the second pressing member;

[0034] In step S5, the second pressing member is controlled to descend by the second driving member.

[0035] Optionally, the adsorption unit further includes a third driving member, which is connected to the first connecting member and has its output end connected to the second suction cup;

[0036] In step S2, the second suction cup is controlled to move up and down along the axial direction of the through hole by the third driving member.

[0037] Optionally, the second connector can be connected to a second external frame, and the second external frame can drive the second connector to move in the horizontal and vertical directions;

[0038] In steps S1 and S3, the second connecting member is moved by the second external frame.

[0039] The beneficial effects of this invention are:

[0040] This invention provides a method for processing large warpage wafers, employing a large warpage wafer processing device. The device includes an adsorption unit and a pressing unit. The adsorption unit comprises a first connector, a first suction cup, and a second suction cup. The upper surface of the first suction cup is divided into a first adsorption area and a second adsorption area from the inside out. The pressing unit includes a second connector, a first pressing component, and a second pressing component. This method uses the large warpage wafer processing device to perform stepped pressing and flattening of the large warpage wafer in different regions. This effectively avoids localized stress concentration or incomplete pressing of the wafer by a single pressing unit when pressing the edge of the large warpage wafer, thus improving the flattening effect. Attached Figure Description

[0041] Figure 1 This is a flowchart of the large warpage wafer processing method described in the embodiments of the present invention;

[0042] Figure 2 This is a detailed flowchart of step S6 in the large warpage wafer processing method described in this embodiment of the invention;

[0043] Figure 3 This is a detailed flowchart of step S7 of the large warpage wafer processing method described in this embodiment of the invention;

[0044] Figure 4 This is the operation flow of the large warpage wafer processing device described in the embodiments of the present invention. Figure 1 ;

[0045] Figure 5 This is the operation flow of the large warpage wafer processing device described in the embodiments of the present invention. Figure 2 ;

[0046] Figure 6 This is the operation flow of the large warpage wafer processing device described in the embodiments of the present invention. Figure 3 ;

[0047] Figure 7 This is the operation flow of the large warpage wafer processing device described in the embodiments of the present invention. Figure 4 ;

[0048] Figure 8This is a schematic diagram of the structure of the large warpage wafer processing device according to an embodiment of the present invention;

[0049] Figure 9 This is a side view of the large warpage wafer processing apparatus described in an embodiment of the present invention;

[0050] Figure 10 This is a schematic diagram of the adsorption unit described in an embodiment of the present invention;

[0051] Figure 11 This is a top view of the adsorption unit described in an embodiment of the present invention;

[0052] Figure 12 This is a schematic diagram of the pressing unit described in an embodiment of the present invention.

[0053] In the picture:

[0054] 1. Adsorption unit; 11. First connector; 12. First suction cup; 121. First adsorption area; 122. Second adsorption area; 123. First adsorption groove; 1231. First concentric groove; 1232. First connecting groove; 124. Second adsorption groove; 1241. Second concentric groove; 1242. Second connecting groove; 13. Second suction cup; 131. Adsorption hole; 14. Third driving component; 2. Pressing unit; 21. Second connector; 22. First pressing component; 23. Second pressing component; 24. First driving component; 25. Second driving component; 3. Vacuum circuit; 100. Wafer. Detailed Implementation

[0055] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0056] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection or a detachable connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0057] In the description of this invention, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0058] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0059] like Figures 1 to 12 As shown, this invention provides a method for processing large warpage wafers, employing a large warpage wafer processing device to process the large warpage wafer. The large warpage wafer processing device includes an adsorption unit 1 and a pressing unit 2. The adsorption unit 1 includes a first connector 11, a first suction cup 12, and a second suction cup 13. The first suction cup 12 is connected to the first connector 11, and a through hole is formed at the center of the first suction cup 12. The second suction cup 13 is movably disposed within the through hole and its position is adjustable along the axial direction of the through hole. The upper surface of the first suction cup 12 is divided into a first adsorption area 121 and a second adsorption area 122 from the inside out. The pressing unit 2, located above the adsorption unit 1, includes a second connector 21, a first pressing member 22, and a second pressing member 23. The first pressing member 22 is vertically and vertically connected to the second connector 21, and the second pressing member 23 is vertically and vertically connected to the second connector 21.

[0060] like Figure 1 As shown, the method for processing large warpage wafers includes the following steps:

[0061] S1. Control the pressing unit 2 to move laterally from above the adsorption unit 1 to avoid the adsorption unit 1; specifically, as follows: Figure 4 and Figure 12 As shown, the second connector 21 is tunably connected to the second external frame. By adjusting the position of the second connector 21 relative to the second external frame, the pressing unit 2 is moved laterally from above the adsorption unit 1.

[0062] S2. Control the second suction cup 13 to rise along the axial direction of the through hole. After the second suction cup 13 adsorbs the large warped wafer 100 from the external device, control the second suction cup 13 to descend along the axial direction of the through hole until it is flush with the upper end face of the first suction cup 12; specifically, as shown... Figure 4 As shown, step S2 completes the handover of the large warp wafer 100 from the external device by the large warp wafer processing device.

[0063] S3. Control the pressing unit 2 to move above the adsorption unit 1 and control the pressing unit 2 to descend to a preset position; specifically, as shown in the figure. Figure 5 As shown, the pressing unit 2 is adjusted to a preset position to press the large warped wafer 100.

[0064] S4. Control the first pressing member 22 to descend and press against the portion of the large warp wafer 100 located above the first adsorption region 121, while simultaneously controlling the first adsorption region 121 to adsorb the bottom of the portion of the large warp wafer 100 located above the first adsorption region 121; specifically, as shown... Figure 6 As shown, through the pressing action of the first pressing member 22 and the adsorption action of the first adsorption region 121, the portion of the large warp wafer 100 located above the first adsorption region 121 is flattened, thereby reducing the warp degree of the large warp wafer 100.

[0065] S5. Control the second pressing member 23 to descend and press against the portion of the large warp wafer 100 located above the second adsorption region 122, while simultaneously controlling the second adsorption region 122 to adsorb the bottom of the portion of the large warp wafer 100 located above the second adsorption region 122. Specifically, as... Figure 7 As shown, through the pressing action of the second pressing member 23 and the adsorption action of the second adsorption region 122, the portion of the large warp wafer 100 located above the second adsorption region 122 is flattened, further reducing the warp degree of the large warp wafer 100.

[0066] The first adsorption region 121 and the second adsorption region 122 are arranged from the inside out to achieve regional step-by-step pressing and flattening of the large warp wafer 100. This can effectively avoid local stress concentration or incomplete pressing of the wafer 100 by a single pressing unit when pressing the edge of the large warp wafer 100, thus improving the flattening effect of the large warp wafer processing device on the large warp wafer 100.

[0067] That is, the first adsorption region 121 cooperates with the first pressing member 22 to correct the warping of the inner ring of the wafer 100; the second adsorption region 122 cooperates with the second pressing member 23 to correct the warping of the outer ring of the wafer 100.

[0068] In this embodiment, as Figure 10 and Figure 11As shown, the adsorption unit 1 also includes a vacuum path 3, which includes a first branch gas path and a second branch gas path. The upper end face of the first adsorption region 121 is provided with a first adsorption groove 123 connected to the first branch gas path, and the upper end face of the second adsorption region 122 is provided with a second adsorption groove 124 connected to the second branch gas path. The gas pressure of the first branch gas path and the second branch gas path can be adjusted independently. In step S4, the first branch gas path is activated, so that the first adsorption region 121 adsorbs the bottom of the large warp wafer 100 located above the first adsorption region 121. In step S5, the second branch gas path is activated, so that the second adsorption region 122 adsorbs the bottom of the large warp wafer 100 located above the second adsorption region 122. By independently adjusting the gas pressure of the first adsorption region 121 and the second adsorption region 122 through the first branch gas path and the second branch gas path, the operator can independently adjust the adsorption force of the first adsorption region 121 and the second adsorption region 122 according to the different warpage of the wafer 100, thereby further improving the flattening effect on the wafer 100.

[0069] Specifically, such as Figure 10 As shown, the vacuum path 3 includes a rotary joint. The lower end of the rotary joint is rotatably connected to a bearing mounted on the third drive member 14, and the upper end of the rotary joint is fixedly connected to the lower part of the first suction cup 12 and the second suction cup 13. A vacuum chamber is formed inside the rotary joint, which is connected to the first adsorption groove 123, the second adsorption groove 124, and the adsorption hole 131. The vacuum chamber also has vents that connect to an external vacuum source, and the remaining parts of the vacuum chamber are kept sealed from the outside. For example, two vents can be provided, each connected to a different vacuum source, to form a first branch air path and a second branch air path, and to achieve independent adjustment of their air pressure. The number of vents can also be set to three or more according to different adsorption requirements, which is not specifically limited here. In this embodiment, the rotary joint is driven by a drive motor fixed below the first connector 11, which in turn drives the first suction cup 12 and the second suction cup 13 to rotate around their own axis, thereby driving the flattened wafer 100 to rotate around its own axis, so that after the adsorption unit 1 completes the large warp wafer processing process, it can also be used for the subsequent wafer thinning process.

[0070] Furthermore, such as Figure 11As shown, the first adsorption region 121 is annular, and the first adsorption tank 123 includes a plurality of first concentric circular tanks 1231 and a first connecting tank 1232 connecting the plurality of first concentric circular tanks 1231. The second adsorption region 122 is annular, and the second adsorption tank 124 includes a plurality of second concentric circular tanks 1241 and a second connecting tank 1242 connecting the plurality of second concentric circular tanks 1241. The plurality of first concentric circular tanks 1231 and the first connecting tank 1232 connecting the plurality of first concentric circular tanks 1231 can form uniform adsorption on the bottom of the wafer 100 located above the first adsorption region 121. The plurality of second concentric circular tanks 1241 and the second connecting tank 1242 connecting the plurality of second concentric circular tanks 1241 can form uniform adsorption on the bottom of the wafer 100 located above the second adsorption region 122.

[0071] Accordingly, the first pressing member 22 is an annular pressing member, and the area of ​​the lower end surface of the first pressing member 22 is equal to the area of ​​the upper end surface of the first adsorption region 121. The second pressing member 23 is an annular pressing member, and the area of ​​the lower end surface of the second pressing member 23 is equal to the area of ​​the second adsorption region 122. The above structural design improves the cooperation effect between the first pressing member 22 and the first adsorption region 121, as well as the cooperation effect between the second pressing member 23 and the second adsorption region 122, further improving the flattening effect on the large warp wafer 100. In other embodiments, one of the first pressing member 22 or the second pressing member 23 can be set as an annular pressing member, and the other can be set as another shape, which will not be described in detail here.

[0072] Optionally, the vacuum path may also include a third branch path, such as Figure 11 As shown, the upper end face of the second suction cup 13 has an adsorption hole 131 connected to the third branch gas path; in step S2, after the second suction cup 13 rises along the axial direction of the through hole, the third branch gas path is activated, causing the second suction cup 13 to adsorb the large warped wafer 100 from the external device. The third branch gas path provides vacuum pressure to the second suction cup 13, causing the adsorption hole 131 to form a vacuum adsorption area on the upper end face of the second suction cup 13.

[0073] Furthermore, such as Figure 10 As shown, the adsorption unit 1 also includes a third driving member 14, which is connected to the first connecting member 11 and has its output end connected to the second suction cup 13. In step S2, the third driving member 14 controls the second suction cup 12 to move up and down along the axial direction of the through hole. The third driving member 14 can be a telescopic cylinder or an electric telescopic rod, etc., and is not specifically limited here.

[0074] Optionally, the large warpage wafer processing apparatus further includes a detection unit connected to the first external rack, configured to detect the flatness of wafer 100. The large warpage wafer processing method further includes the following step: S6, detecting the flatness of the large warpage wafer 100 using the detection unit. Adding the detection unit allows for precise quantification of the warpage of wafer 100, transforming the large warpage wafer processing from qualitative to quantitative analysis, effectively preventing defective wafers 100 from flowing into subsequent wafer thinning processes.

[0075] Specifically, such as Figure 2 As shown, step S6 includes: S61, the detection unit detects whether the flatness of the large warp wafer 100 is qualified; if yes, the wafer 100 is determined to be a qualified product; if no, step S7, the warp adjustment procedure, is executed. Specifically, step S61 makes a judgment on the quality of the large warp wafer 100 based on preset quality standards, and makes a decision on the next step based on the judgment result, so that the large warp wafer method has self-correction and repair capabilities, salvages potential defective products, effectively avoids misjudgments caused by human inspection fatigue or inconsistent standards, and significantly improves the pass rate of the large warp wafer 100 processing.

[0076] Furthermore, such as Figure 3 As shown, step S7 includes the following steps: S71, detecting whether the location of the non-flatness of wafer 100 is relatively close to the center of wafer 100; if yes, proceed to step S72; if no, proceed to step S73; S72, adjusting the adsorption force of the first adsorption region 121; and / or, adjusting the pressure of the first pressing member 22; S73, adjusting the adsorption force of the second adsorption region 122; and / or, adjusting the pressure of the second pressing member 23. Specifically, in step S72, the adsorption force of the first adsorption region 121 is adjusted by adjusting the gas pressure of the first branch gas path, and the pressure of the first pressing member 22 is adjusted by adjusting the downward pressing of the first pressing member 22 against the large warped wafer 100 in the vertical direction. Both can be adjusted together or one of them can be adjusted separately to flatten the non-flattened part near the center of wafer 100. In step S73, the adsorption force of the second adsorption zone 122 is adjusted by adjusting the gas pressure of the second branch gas path, and the pressure of the second pressing member 23 is adjusted by adjusting the downward pressing of the large warped wafer 100. The two can be adjusted together or one of them can be adjusted alone to flatten the defective part far from the center of the wafer 100.

[0077] For example, such as Figure 12As shown, the pressing unit 2 further includes a first driving member 24, which is connected to the second connecting member 21 and has its output end connected to the first pressing member 22. In step S4, the first driving member 24 controls the first pressing member 22 to descend. The pressing unit 2 also includes a second driving member 25, which is connected to the second connecting member 21 and has its output end connected to the second pressing member 23. In step S5, the second driving member 25 controls the second pressing member 23 to descend. The first driving member 24 and the second driving member 25 can be telescopic cylinders or electric telescopic rods, etc., and are not specifically limited here.

[0078] Optionally, the second connector 21 can be connected to the second external rack, which can drive the second connector 21 to move in both horizontal and vertical directions. In steps S1 and S3, the second external rack drives the second connector 21 to move. This allows the pressing unit 2 to avoid the second suction cup 13 when it adsorbs the wafer 100 transferred from the external device. When the pressing unit 2 presses the wafer 100, it can be adjusted to be above the adsorption unit 1, and the first pressing member 22 and the second pressing member 23 can be aligned with the first adsorption area 121 and the second adsorption area 122, respectively.

[0079] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A method for processing wafers with large warpage, characterized in that, A large warpage wafer processing device is used to process large warpage wafers. The large warpage wafer processing device includes an adsorption unit and a pressing unit. The adsorption unit includes a first connector, a first suction cup, and a second suction cup. The first suction cup is connected to the first connector, and a through hole is formed at the center of the first suction cup. The second suction cup is movably disposed within the through hole and its axial position is adjustable along the through hole. The upper end surface of the first suction cup is divided into a first adsorption area and a second adsorption area from the inside to the outside. The pressing unit can be located above the adsorption unit and includes a second connector, a first pressing member, and a second pressing member. The first pressing member is vertically and vertically connected to the second connector, and the second pressing member is vertically and vertically connected to the second connector. The method for processing large warpage wafers includes the following steps: S1. Control the pressing unit to move laterally from above the adsorption unit to avoid the adsorption unit; S2. Control the second suction cup to rise along the axial direction of the through hole. After the second suction cup adsorbs the large warped wafer from the external device, control the second suction cup to descend along the axial direction of the through hole until it is flush with the upper end face of the first suction cup. S3. Control the pressing unit to move above the adsorption unit and control the pressing unit to descend to a preset position; S4. Control the first pressing member to descend and press against the portion of the large warped wafer located above the first adsorption area, while controlling the first adsorption area to adsorb the bottom of the portion of the large warped wafer located above the first adsorption area. S5. Control the second pressing member to descend and press against the portion of the large warped wafer located above the second adsorption region, while simultaneously controlling the second adsorption region to adsorb the bottom of the portion of the large warped wafer located above the second adsorption region.

2. The method for processing large warpage wafers according to claim 1, characterized in that, The large warpage wafer processing apparatus further includes a detection unit connected to a first external rack, the detection unit being configured to detect the flatness of the wafer; The method for processing large warpage wafers also includes the following steps: S6. Use the detection unit to detect the flatness of the large warp wafer.

3. The method for processing large warpage wafers according to claim 2, characterized in that, Step S6 includes: S61. The detection unit detects whether the flatness of the large warp wafer is up to standard; If so, the wafer is deemed a qualified product; If not, proceed to step S7, the warp adjustment procedure.

4. The method for processing large warpage wafers according to claim 3, characterized in that, Step S7 includes the following steps: S71. Check whether the location of the wafer flatness defect is relatively close to the center of the wafer; If so, proceed to step S72; If not, proceed to step S73; S72. Adjust the adsorption force of the first adsorption zone; and / or, adjust the pressing force of the first pressing member; S73. Adjust the adsorption force of the second adsorption zone; and / or, adjust the pressure of the second pressing member.

5. The method for processing large warpage wafers according to claim 1, characterized in that, The adsorption unit further includes a vacuum path, which includes a first branch gas path and a second branch gas path. The upper end face of the first adsorption area is provided with a first adsorption groove connected to the first branch gas path, and the upper end face of the second adsorption area is provided with a second adsorption groove connected to the second branch gas path. The gas pressure of the first branch gas path and the second branch gas path can be adjusted independently. In step S4, the first branch gas path is activated, causing the first adsorption region to adsorb the bottom of the portion of the large warped wafer located above the first adsorption region. In step S5, the second branch gas path is activated, causing the second adsorption region to adsorb the bottom of the portion of the large warped wafer located above the second adsorption region.

6. The method for processing large warpage wafers according to claim 5, characterized in that, The vacuum path also includes a third branch air path, and the upper end face of the second suction cup is provided with an adsorption hole that communicates with the third branch air path; In step S2, after the second suction cup rises along the axial direction of the through hole, the third branch air path is activated, causing the second suction cup to adsorb the large warped wafer from the external device.

7. The method for processing large warpage wafers according to claim 1, characterized in that, The pressing unit further includes a first driving member, which is connected to the second connecting member and its output end is connected to the first pressing member; In step S4, the first pressing member is lowered by the first driving member.

8. The method for processing large warpage wafers according to claim 1, characterized in that, The pressing unit further includes a second driving member, which is connected to the second connecting member and its output end is connected to the second pressing member; In step S5, the second pressing member is controlled to descend by the second driving member.

9. The method for processing large warpage wafers according to claim 1, characterized in that, The adsorption unit further includes a third driving component, which is connected to the first connecting component and has its output end connected to the second suction cup; In step S2, the second suction cup is controlled to move up and down along the axial direction of the through hole by the third driving member.

10. The method for processing large warpage wafers according to claim 1, characterized in that, The second connector can be connected to the second external frame, and the second external frame can drive the second connector to move in the horizontal and vertical directions; In steps S1 and S3, the second connecting member is moved by the second external frame.

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