Transformation module for RF amplifier arrangement, RF amplifier arrangement comprising such transformation module, and arrangement for accelerating particles comprising at least one such RF amplifier arrangement
By using a multi-layer chip structure and an overlapping outer conductor layer design, the transformation module solves the manufacturing complexity and cost problems of mid-frequency range impedance transformers, achieving compact and efficient impedance transformation that meets the reliability and power requirements of applications such as particle accelerators.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-29
- Publication Date
- 2026-04-07
AI Technical Summary
In the existing technology, impedance transformers in the mid-frequency range (40 MHz to 200 MHz) are complex to manufacture, costly, and require a large amount of space, making it difficult to meet the reliability and power requirements of applications such as particle accelerators.
The conversion module adopts a multi-layer chip structure, which utilizes the overlapping design of multi-layer chip planar substrate and outer conductor layer to achieve electromagnetic coupling and magnetic coupling. An RF-sealed outer conductor shell is formed through an outer conductor connection device, which simplifies the manufacturing process and improves reliability.
It enables efficient impedance transformation in a compact design, reducing manufacturing complexity and cost while meeting the reliability and power requirements of applications such as particle accelerators.
Smart Images
Figure CN121816699A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a conversion module for an RF amplifier device, an RF amplifier device having such a conversion module, and a device for accelerating particles, having at least one such RF amplifier device, particularly a particle accelerator. Background Technology
[0002] In high-frequency applications, inductive transformers are frequently used to match input impedance. This allows for wider bandwidth matching, for example, using amplifiers. Inductive transformers change the input impedance by a factor derived from their number of turns. Typical factors are, for example, 1:4 or 1:9. Ferrite is used for low frequencies, particularly below 100 MHz or below 40 MHz. Microstrip structures are typically used in transformers for higher frequencies, particularly above 200 MHz or above 400 MHz.
[0003] The intermediate frequency range poses a challenge for such impedance transformers. This intermediate frequency range specifically includes frequencies between 40 MHz and 400 MHz, and more specifically, frequencies between 100 MHz and 200 MHz. Ferrites cannot perform optimally in these frequency ranges, while pure microstrip structures are too large.
[0004] Currently, impedance transformers in the aforementioned frequency ranges are typically implemented as bent coaxial cables with electrically connected outer conductors. Such inductive impedance transformers are costly to manufacture and complex to assemble. Furthermore, the high manufacturing tolerances of bent coaxial cables can lead to parasitic effects. Typically, such inductive impedance transformers require manual adjustment after manufacturing, which is a significant engineering task. Additionally, inductive impedance transformers implemented using coaxial cables occupy a large amount of space. Particularly in applications for particle acceleration, extremely high reliability requirements are imposed. Moreover, the very high power demands often necessitate a large number of RF amplifier units that must reproducibly perform the same function. In this respect, components requiring significant manual labor in their manufacture are disadvantageous.
[0005] Purpose of the invention Therefore, the object of this invention is to create an impedance transformer that can be manufactured inexpensively and repeatedly and has a compact design. At the same time, the assembly process in production should be as simple as possible. Summary of the Invention
[0006] This objective is achieved by the conversion module according to independent claim 1. Claim 20 describes an RF amplifier device including such a conversion module. Claim 24 describes a device for accelerating charged particles, the device having at least one such RF amplifier device. Claims 2 to 19 specifically describe advantageous further improvements to the conversion module. Claims 21 to 23 specifically describe advantageous further improvements to the RF amplifier circuit. Claim 25 describes advantageous further improvements to the device for accelerating charged particles.
[0007] The conversion module described herein is used to convert a first input impedance at a terminal of a first conversion module into a second input impedance at a terminal of a second conversion module.
[0008] The conversion module is suitable for use, for example, in RF amplifier devices, particularly in push-pull amplifier devices.
[0009] Such RF amplifier devices can be used, for example, in devices used to accelerate charged particles. Here, "charged particles" refers to particles of atomic or molecular size.
[0010] Devices used to accelerate charged particles can refer to: - A plasma processing apparatus for coating, etching or other material treatment, in which ions are accelerated to achieve the processing result, and in particular, gas laser excitation is also achieved; - Particle accelerators, such as linear particle accelerators (LINAC), cyclotrons, or similar charged particle accelerators.
[0011] To significantly simplify manufacturing and processing operations, the conversion module has a multilayer sheet structure. For this purpose, a multilayer sheet planar substrate is provided, particularly a multilayer sheet planar substrate in the form of a circuit board.
[0012] The multilayer substrate has a first outer layer, a second outer layer, and a first intermediate layer, wherein the first intermediate layer is disposed between the first outer layer and the second outer layer.
[0013] An outer conductor is arranged on or in a substrate, the outer conductor having a first outer conductor layer and a second outer conductor layer, wherein the first outer conductor layer is arranged on or in a first outer layer in the form of a first planar outer conductor winding having a first end and a second end, and wherein the second outer conductor layer is arranged on or in a second outer layer in the form of a second planar outer conductor winding having a first end and a second end.
[0014] The first outer conductor layer and the second outer conductor layer are electrically connected to each other. The first end of each of the first outer conductor layer and the second outer conductor layer forms the first outer conductor terminal of the first conversion module terminal, and the second end of each of the first outer conductor layer and the second outer conductor layer forms the second outer conductor terminal of the first conversion module terminal.
[0015] An inner conductor with an inner conductor track is disposed on or in a substrate. The inner conductor track extends as a planar inner conductor winding, and at least a first portion of the planar inner conductor winding is disposed in a first intermediate layer, and the inner conductor track is covered by a first outer conductor layer in the direction of a first outer layer and by a second outer conductor layer in the direction of a second outer layer.
[0016] The inner conductor trace includes a first inner conductor end and a second inner conductor end, wherein the two inner conductor ends form the second conversion module terminal.
[0017] The first and second out-of-plane conductor windings, as well as the in-plane conductor winding, are arranged in a planar configuration that primarily overlaps with each other. This allows for the establishment of predetermined electrical and magnetic couplings between the first and second out-of-plane conductor windings and the in-plane conductor winding.
[0018] An outer conductor connection device is arranged on or in a substrate, and the outer conductor connection device electrically connects the first outer conductor layer and the second outer conductor layer to each other, such that the outer conductor connection device together with the first outer conductor layer and the second outer conductor layer forms an outer conductor shell, which mainly surrounds the planar inner conductor winding of the inner conductor trace in an RF sealing manner.
[0019] In one aspect, the outer conductor connection device is arranged at least partially, and preferably primarily, on the outer region of at least one of the following: - Planar substrate, - First outer conductor layer or - Second outer conductor layer.
[0020] The outer region refers to the area at the outer edge of the device. This outer region can be the outer margin. It can also be the area located within but very close to the outer margin.
[0021] In one aspect, the transformation module includes a multi-layer planar structure. Such a multi-layer planar structure can be manufactured particularly easily and repeatedly.
[0022] In one aspect, the inner conductor includes a planar inner conductor winding and is disposed between a first outer conductor layer and a second outer conductor layer, the first and second outer conductor layers also being constructed as a first planar outer conductor winding and a second planar outer conductor winding, respectively. This allows for the very ingenious setting of the conversion ratio between the first conversion module terminals and their first and second outer conductor terminals and the second conversion module terminals and their first and second inner conductor terminals.
[0023] For example, if the first and second out-of-plane conductor windings each consist of exactly one turn extending around the center, and the in-plane conductor winding consists of two turns extending around the center, then the transformation ratio is 1:4. On the other hand, if the in-plane conductor winding consists of three turns extending around the center, then the transformation ratio is 1:9.
[0024] To further improve electrical performance, the substrate also includes external conductor connection devices in another aspect. Particularly advantageously, these external conductor connection devices electrically connect the first and second external conductor layers to each other, such that the in-plane conductor winding is surrounded by this electrical connection. The in-plane conductor winding acts like an RF cage, thereby preventing or severely limiting electromagnetic waves from coupling into the in-plane conductor winding from the outside, and thus preventing or severely limiting RF signals from escaping outward from the in-plane conductor winding.
[0025] The phrase “the outer conductor shell is RF sealed” according to the wording that it “primarily” surrounds the planar inner conductor winding of the inner conductor trace should be understood to mean that more than 50%, 60%, 70%, 80% or more than 90% of the area between the first outer conductor layer and the second outer conductor layer is laterally shielded by the outer conductor connection device.
[0026] The conversion module can operate in two directions. An RF signal can be applied to the first inner conductor terminal and / or the second inner conductor terminal, and thus to the second conversion module terminal. Alternatively, an RF signal can be applied to the first outer conductor terminal and / or the second outer conductor terminal, and thus to the first conversion module terminal. The RF signal is then converted and output at the other conversion module terminal. The RF signal is an electrical signal, specifically a voltage relative to a fixed potential, such as a reference ground.
[0027] The term "RF-sealed" means that RF fields cannot penetrate or escape, or can only penetrate or escape with a significant reduction. Therefore, the field is concentrated inside the converter module and does not diffuse widely.
[0028] "Input impedance" should be specifically understood as the impedance measured at a terminal relative to a fixed potential, such as ground, for an RF signal. Impedance can have a real part and an imaginary part.
[0029] In one respect, a circuit board is a PCB (printed circuit board).
[0030] In one aspect, the first outer conductor layer is a predetermined conductive conductor trace structure in the first outer sheet. Alternatively or concurrently, the second outer conductor layer is a predetermined conductive conductor trace structure in the second outer sheet.
[0031] In one aspect, the inner conductor trace is a predetermined conductive conductor trace structure in the first intermediate layer.
[0032] In one aspect, the in-plane conductor winding extends around the center in the first intermediate layer.
[0033] In one aspect, the in-plane conductor winding extends at least one, 1.5, 2, 2.5, or 3 turns around the center of the first intermediate layer.
[0034] In one respect, the conversion module is capable of operating in a frequency range from 40 MHz to 400 MHz, and particularly in a frequency range from 100 MHz to 200 MHz. This in particular makes it possible to solve frequency ranges that are difficult or impossible to achieve using ferrite or microstrip structures.
[0035] In one aspect, the width of the inner conductor trace is smaller than the width of the first and second outer conductor layers. This ensures that the inner conductor trace is particularly well surrounded by the first and second outer conductor layers in an RF-sealed manner. Specifically, the width of the inner conductor trace over its entire length, or over its main length, or over at least a first portion of the planar inner conductor winding, is smaller than the width of the first and second outer conductor layers.
[0036] In one aspect, the first outer layer is an outer layer on the substrate, particularly on the circuit board. Alternatively or concurrently, the second outer layer is an outer layer on the substrate, particularly on the circuit board.
[0037] In one aspect, the first outer layer is partially or completely covered by a dielectric insulating material. In this case, the first outer conductor layer is completely or partially covered by such a dielectric insulating material. Additional layers may also be applied to the first outer layer. Alternatively, the first outer layer has no or substantially no such dielectric insulating material. In this case, the first outer conductor layer is not or substantially not covered by such a dielectric insulating material.
[0038] In one aspect, the second outer layer is partially or completely covered by a dielectric insulating material. In this case, the second outer conductor layer is completely or partially covered by such a dielectric insulating material. Additional layers may also be applied to the second outer layer. Alternatively, the second outer layer has no or substantially no such dielectric insulating material. In this case, the second outer conductor layer is not or substantially not covered by such a dielectric insulating material.
[0039] In one aspect, the first outer conductor layer is designed as a planar metallization layer, and has no or substantially no cutouts in the metallization layer. Alternatively, the first outer conductor layer is designed as a metallization layer with such cutouts that the metallization layer has a linear and / or mesh structure.
[0040] In one aspect, the second outer conductor layer is designed as a planar metallization layer with no or substantially no cutouts. Alternatively, the second outer conductor layer is designed as a metallization layer with such cutouts that the metallization layer has a linear and / or mesh structure.
[0041] In one aspect, the first outer conductor layer is rectangular, square, elliptical, or circular in the plan view. Alternatively or concurrently, the second outer conductor layer is rectangular, square, elliptical, or circular in the plan view.
[0042] In one aspect, the first outer conductor layer and the second outer conductor layer surround the respective centers on the first outer layer and the second outer layer, thereby forming the first planar outer conductor winding and the second planar outer conductor winding.
[0043] In one aspect, the first outer conductor layer and the second outer conductor layer have the same shape in the plan view, or their shapes differ from each other by less than 10%. In particular, the overlap deviation in the plan view is less than 10% of the area of the first outer conductor layer or the second outer conductor layer.
[0044] In one aspect, a first off-plane conductor winding is separated by a gap, thereby forming a first end and a second end. Furthermore, a second off-plane conductor winding is separated by a gap, thereby forming a first end and a second end.
[0045] In one respect, the gap extends along a straight line and has no angles or curves.
[0046] In one aspect, the gaps between the first outer conductor layer and the second outer conductor layer are arranged in a plan view to overlap or primarily overlap each other.
[0047] In one aspect, in a plan view, a first portion of the in-plane conductor winding crosses the gap between the first outer conductor layer or the second outer conductor layer at a right angle on the first intermediate layer in one aspect.
[0048] In one respect, the first outer conductor layer is axisymmetric with respect to the longitudinal axis passing through the gap in the first outer conductor layer. Alternatively or additionally, the second outer conductor layer is axisymmetric with respect to the longitudinal axis passing through the gap in the second outer conductor layer.
[0049] In one aspect, the conversion module includes power supply terminals, particularly DC voltage terminals.
[0050] The power supply terminals may be specifically connected to the first outer conductor layer and / or the second outer conductor layer at the feed point. The feed point may be arranged specifically opposite the gap. In particular, a straight line passing through the gap may also pass through the feed point.
[0051] In the case of an axisymmetric structure with a first outer conductor layer and / or a second outer conductor layer, the longitudinal axis can pass through the corresponding feed point. This results in a symmetrical feed. DC voltage can then be used to power the RF amplifier device.
[0052] In one aspect, the substrate includes a second intermediate layer, wherein the first intermediate layer and the second intermediate layer are disposed between the first outer layer and the second outer layer.
[0053] The inner conductor traces can also be arranged on the second intermediate layer. The first and second intermediate layers can be specifically arranged so that one is on top of the other. The advantage of the second intermediate layer and therefore the total of four layers, which are preferably arranged so that one is on top of the other, is that the circuit board with four layers can be symmetrically pressed, and the production of such a printed circuit board is cheaper than that using only three layers.
[0054] In one aspect, the inner conductor trace is a predetermined conductive conductor trace structure in the second intermediate layer.
[0055] In one aspect, a dielectric material is introduced between the first intermediate layer and the second intermediate layer.
[0056] In one aspect, the substrate includes vias through which internal conductor traces transition from a first intermediate layer to a second intermediate layer. The vias may penetrate the entire substrate or only a portion of the substrate, such as the first and second intermediate layers.
[0057] In one aspect, at least a second portion of the in-plane conductor winding is arranged in the second intermediate layer. Specifically, the inner conductor trace, particularly the second portion of the in-plane conductor winding, is covered by a first outer conductor layer in the direction of the first outer layer and by a second outer conductor layer in the direction of the second outer layer. By using such a second intermediate layer, a higher conversion ratio can be achieved while maintaining the compact structure of the conversion module.
[0058] In one aspect, the first portion of the in-plane conductor winding has the same number of turns as the second portion of the in-plane conductor winding. For example, the first portion of the in-plane conductor winding may include one turn, and the second portion of the in-plane conductor winding may also include one turn. This results in a total of two turns. Assuming that the first and second out-of-plane conductor windings each also include one turn, a transformation ratio of 1:4 is obtained. Preferably, the first portion of the in-plane conductor winding has 1.5 turns, and the second portion of the in-plane conductor winding also has 1.5 turns. This results in a total of three turns, thus producing a transformation ratio of 1:9.
[0059] In one aspect, a first portion of the in-plane conductor winding on the first intermediate layer extends in the same direction as a second portion of the in-plane conductor winding on the second intermediate layer, the first portion of the in-plane conductor winding on the first intermediate layer extending specifically around a center on the first intermediate layer, and the second portion of the in-plane conductor winding on the second intermediate layer extending around a center on the second intermediate layer. For example, the first and second portions extend clockwise or counterclockwise.
[0060] In one aspect, the first portion of the in-plane conductor winding on the first intermediate layer overlaps only partially with the second portion of the in-plane conductor winding on the second intermediate layer in the planar view. This reduces the capacitive coupling between the first and second portions, which has a positive impact on the electrical performance of the converter module.
[0061] In one aspect, the substrate includes vias through which inner conductor traces transition from a first intermediate layer to a first outer layer or a second outer layer. In this case, preferably, a second intermediate layer is not required.
[0062] In one aspect, the second portion of the in-plane conductor winding partially or completely passes through the gap between the first outer conductor layer or the second outer conductor layer on the first outer sheet or the second outer sheet.
[0063] In one aspect, in the first alternative, the second portion of the in-plane conductor winding extends further on the first or second outer sheet.
[0064] In one aspect, or in a second alternative, a second portion of the planar inner conductor winding transitions back to the first intermediate layer from the first outer layer or the second outer layer via an additional via. There, the second portion can extend further from the center of the first intermediate layer than it was before transitioning into the first or second outer layer, or as it was before transitioning into the first or second outer layer. This allows the inner conductor to be guided back out of the intermediate layer, making both the first and second inner conductor ends usable as terminals. In principle, the inner conductor should remain in the intermediate layer for as long as possible, since it is shielded by the first and second outer conductor layers within the intermediate layer.
[0065] In one aspect, the first and second inner conductor ends of the inner conductor traces are arranged on the same side of the substrate. This makes connection particularly easy.
[0066] In one aspect, in the plan view of the first outer conductor layer and / or the second outer conductor layer, the first inner conductor end and / or the second inner conductor end extend laterally through the first outer conductor layer and / or the second outer conductor layer, thereby achieving easy connection.
[0067] In one aspect, the edges of the substrate on which the first inner conductor end and / or the second inner conductor end are disposed are metallized, and in particular electroplated, so that the first inner conductor end and / or the second inner conductor end can be soldered to another circuit board of the RF amplifier device in the SMD process.
[0068] In one aspect, the outer conductor connection device includes a plurality of vias that electrically connect a first outer conductor layer to a second outer conductor layer. These vias then form an outer conductor housing. Alternatively or additionally, the outer conductor connection device includes a conductive connection, particularly an electroplated part, disposed at the edge of a substrate and electrically connecting the first outer conductor layer to the second outer conductor layer. This conductive connection then forms the outer conductor housing.
[0069] In one respect, the conductive connection along the edge is essentially closed.
[0070] In one aspect, vias are smaller than the distance between vias. or The distance arrangement, among which, It is the wavelength of the center frequency of the RF signal transmitted via the conversion module.
[0071] In one aspect, multiple vias are arranged along the inner and outer boundary lines, with the inner conductor extending between the inner and outer boundary lines to provide electromagnetic shielding for the inner conductor traces in this region. The inner boundary line is positioned closer to the center of the substrate than the outer boundary line.
[0072] In one respect, the outer boundary line may extend along the edge region of the substrate or be spaced apart from the edge region of the substrate.
[0073] In one respect, vias can only be introduced into the regions where the first outer conductor layer and the second outer conductor layer are located in the first outer layer and the second outer layer.
[0074] In another respect, multiple vias can be along the inner boundary line.
[0075] In one aspect, conductive connections, particularly electroplated parts, can be provided at the edges of the substrate, wherein inner conductor traces extend between the inner boundary line and the conductive connections, thereby providing electromagnetic shielding for the inner conductor traces in this area. In this case, both vias and electrical connections, particularly electroplated parts, are used.
[0076] In another aspect, the substrate includes a cut in its center, thereby forming an inner edge.
[0077] In one aspect, the outer conductor connection device may have an internal conductive connection formed at the inner edge, particularly an internal conductive connection in the form of an electroplated part.
[0078] In one aspect, the inner conductor trace can extend between the internal conductive connection at the inner edge and the conductive connection at the outer edge, thereby providing electromagnetic shielding for the inner conductor trace in this region.
[0079] In one aspect, the outer conductor connection device includes at least one gap.
[0080] In one aspect, the inner conductor trace can extend from at least one gap to transition from a first intermediate layer to another layer, such as a second intermediate layer, a first outer layer, or a second outer layer. Therefore, the gap in the outer layer can be used to guide a portion of the inner conductor trace. This advantage can be used to reduce the number of layers and to route the crossings of the inner conductor trace only in the outer layer. Alternatively or additionally, the inner conductor trace extends from at least one gap using its first inner conductor end and its second inner conductor end. Essentially, there can be two spaced-apart gaps, wherein the inner conductor trace extends from a first gap using its first inner conductor end and from a second gap using its second inner conductor end.
[0081] In one aspect, the substrate includes a plurality of additional vias, wherein the additional vias electrically connect the first outer conductor layer to the second outer conductor layer. The additional vias extend between two turns of the in-plane conductor winding of the inner conductor trace. This results in improved decoupling between the two turns of the inner conductor trace. The two turns can be arranged on the same lamination or on different laminations. The laminations can also be intermediate laminations. In addition to the additional vias, or as an alternative to the additional vias, additional conductive connections, particularly electroplated parts, can be used. To introduce these additional conductive connections, the substrate must be milled accordingly.
[0082] In one aspect, an RF signal can be supplied or output at the first inner conductor terminal. Preferably, the second inner conductor terminal can be connected to a fixed potential, particularly a reference ground. In this context, the second conversion module terminal of the conversion module is preferably a single-ended terminal.
[0083] In one aspect, the first conversion module terminal of the conversion module is a differential terminal, wherein the first RF signal of the differential RF signal can be output or supplied at the first end of the first outer conductor layer and the second outer conductor layer, and wherein the second RF signal of the differential RF signal can be output or supplied at the second end of the first outer conductor layer and the second outer conductor layer.
[0084] The second converter terminal of the converter module can also be a differential terminal. In this context, the first converter terminal of the converter module can be a single-ended terminal.
[0085] In one aspect, the first and second outer-plane conductor windings are electrically isolated from the inner-plane conductor windings.
[0086] In one aspect, the first and second outer-plane conductor windings are each integrated as a single unit.
[0087] The RF amplifier device described herein is specifically designed as a push-pull amplifier device. In one aspect, the RF amplifier device includes a first transistor, a second transistor, and a conversion module already described.
[0088] In another aspect, the RF amplifier device may have a signal input to which the RF signal to be amplified can be applied, wherein the signal input is connected to a first inner conductor end of the inner conductor trace.
[0089] In another aspect, the second inner conductor end of the inner conductor trace is connected to the reference ground.
[0090] In another aspect, the first ends of the first outer conductor layer and the second outer conductor layer are connected to the gate terminal of the first transistor via a first connection.
[0091] In one aspect, the second ends of the first and second outer conductor layers are connected to the gate terminal of the second transistor via a second connection. In this use case, the single-ended terminal can be converted to a differential terminal.
[0092] In another aspect, the conversion module can be designed for high power, particularly power greater than or equal to 200 W, and is specifically designed to connect to the output of the aforementioned RF amplifier device. In this way, the differential output of the RF amplifier device can be configured as an asymmetrical output, with one terminal connected to a reference ground and the other terminal connected to the load as an RF signal.
[0093] In one aspect, the RF amplifier device includes a power supply input connected to power supply terminals on a first outer conductor layer and / or a second outer conductor layer of a conversion module. A first transistor and a second transistor can be powered via this power supply input.
[0094] In one aspect, the conversion module is disposed on the circuit board of the RF amplifier device and is specifically soldered to the circuit board via a soldering process, such as reflow soldering. Bonding processes and / or conductive adhesives may also be used for the electrical connection between the conversion module and the circuit board of the RF amplifier device. Alternatively, the conversion module may be directly part of the circuit board of the RF amplifier device.
[0095] In one aspect, a first impedance matching circuit is arranged in the first connection to transform the input impedance at the first outer conductor terminal of the first conversion module terminal to the input impedance of the first transistor. Furthermore, a second impedance matching circuit is arranged in the second connection to transform the input impedance at the second outer conductor terminal of the first conversion module terminal to the input impedance of the second transistor.
[0096] In one aspect, the input impedance at the first outer conductor terminal of the first conversion module is higher than the input impedance of the first transistor. Furthermore, the input impedance at the second outer conductor terminal of the first conversion module is greater than the input impedance of the second transistor.
[0097] In one respect, the input impedance of the first and second transistors is only a few ohms, particularly less than 10 ohms.
[0098] In one aspect, the first impedance matching circuit includes at least one inductor, such as a coil, and at least one capacitor.
[0099] In one aspect, the second impedance matching circuit includes at least one inductor, such as a coil, and at least one capacitor.
[0100] In one aspect, the transformation ratio of the first impedance matching circuit and the second impedance matching circuit remains constant during operation. Alternatively, the transformation ratio of the first impedance matching circuit and the second impedance matching circuit can be changed during operation by turning on and off reactances such as inductors or capacitors.
[0101] In one aspect, the switching on and off is performed via a semiconductor switch, which also includes a PIN diode.
[0102] In another aspect, devices for accelerating charged particles, particularly those in the form of particle accelerators, include at least one RF amplifier device as already described. Accelerating charged particles is necessary not only in particle accelerators but also in plasma processing. In plasma processing, charged atoms are accelerated. This enables, for example, the performance of industrial plasma coating processes, etching processes, or gas laser excitation.
[0103] In one aspect, the device for accelerating charged particles includes at least one RF resonator. At least one RF amplifier device is connected to at least one RF resonator to transmit an amplified RF signal. Attached Figure Description
[0104] The improved solution is described below by way of example only, with reference to the accompanying drawings. In the drawings: Figure 1 An exemplary implementation of the transformation module is illustrated in an exploded view. Figure 2A An exemplary embodiment of the first outer layer sheet is shown; Figure 2B An exemplary implementation of the first intermediate layer sheet is shown; Figure 2C An exemplary implementation of the second intermediate layer sheet is shown; Figure 2D An exemplary embodiment of the second outer layer sheet is shown; Figure 3A : This illustrates another exemplary embodiment of the first intermediate layer sheet; Figure 3B : This illustrates another exemplary embodiment of the first outer layer sheet; Figure 4A : This illustrates another exemplary embodiment of the first outer layer sheet or the second outer layer sheet; Figure 4B : This illustrates another exemplary embodiment of the first intermediate layer sheet; Figure 5 An exemplary embodiment of an RF amplifier device with a conversion module is shown; and Figure 6An exemplary embodiment of a device for accelerating charged particles with at least one RF amplifier device is shown. Detailed Implementation
[0105] Figure 1 An exemplary embodiment of the conversion module 1 is shown. The conversion module 1 is used in an RF amplifier device 50, particularly a push-pull amplifier device, and preferably in an RF amplifier device 100 for accelerating charged particles. The conversion module is used to convert a first input impedance at a first conversion module terminal 2a to a second input impedance at a second conversion module terminal 2b. The conversion module 1 has a multilayer chip structure.
[0106] The transformation module 1 includes a multilayer planar substrate 3. The substrate 3 has a first outer layer 4, a second outer layer 5, a first intermediate layer 6, and in this case, a second intermediate layer 7. The dielectric layer of the substrate 3 is not shown.
[0107] An outer conductor 8 is disposed on or within a substrate 3. This outer conductor has a first outer conductor layer 9 and a second outer conductor layer 10. The first outer conductor layer 9 is disposed on or within a first outer layer 4 in the form of a first planar outer conductor winding having a first end 9a and a second end 9b. The second outer conductor layer 10 is disposed on or within a second outer layer 5 in the form of a second planar outer conductor winding having a first end 10a and a second end 10b. The first outer conductor layer 9 and the second outer conductor layer 10 are arranged in parallel but spaced apart from each other. Both the first outer conductor layer 9 and the second outer conductor layer 10 are conductive.
[0108] The first outer conductor layer 9 and the second outer conductor layer 10 are electrically connected to each other. The first ends 9a and 10a of the first outer conductor layer 9 and the second outer conductor layer 10 respectively form the first outer conductor terminal 11a of the first conversion module terminal 2a, and the second ends 9b and 10b of the first outer conductor layer 9 and the second outer conductor layer 10 respectively form the second outer conductor terminal 11b of the first conversion module terminal 2a.
[0109] Furthermore, an inner conductor 12 having an inner conductor trace 13 is arranged on or within the substrate. The inner conductor trace 13 extends as a planar inner conductor winding, at least a first portion 14a of which is arranged in the first intermediate layer 6, and the inner conductor trace 13 is covered by a first outer conductor layer 9 in the direction of the first outer layer 4 and by a second outer conductor layer 10 in the direction of the second outer layer 5. A second portion 14b of the planar inner conductor winding is arranged in the second intermediate layer 7. The inner conductor 12 and its inner conductor trace 13 are conductive.
[0110] The inner conductor trace 13 includes a first inner conductor end 13a and a second inner conductor end 13b, wherein the two inner conductor ends 13a and 13b form a second conversion module terminal 2b. The first inner conductor end 13a is disposed on the first intermediate layer 6, and the second inner conductor end 13b is disposed on the second intermediate layer 7.
[0111] The first and second out-of-plane conductor windings and the in-plane conductor winding are arranged in a plan view to overlap each other in a pre-defined manner, such that a predetermined electrical and magnetic coupling is established between the first and second out-of-plane conductor windings and the in-plane conductor winding.
[0112] An outer conductor connection device 15 is arranged on or in the substrate 3, and the outer conductor connection device electrically connects the first outer conductor layer 9 and the second outer conductor layer 10 to each other, such that the outer conductor connection device 15 together with the first outer conductor layer 9 and the second outer conductor layer 10 forms an outer conductor shell, which mainly surrounds the planar inner conductor winding of the inner conductor trace 13 of the inner conductor 12 in an RF sealing manner.
[0113] The outer conductor connection device 15 is disposed here on the outer region of the first outer conductor layer 9 and the second outer conductor layer 10. The substrate 3 can be conceived here to have the same size as the first outer conductor layer 9 or the second outer conductor layer 10. This would mean that the outer conductor connection device 15 would also be disposed on the outer region of the substrate 3.
[0114] The outer conductor connection device 15 is shown here such that it is arranged only partially on the outer regions of the first outer conductor layer 9 and the second outer conductor layer 10. This description is intended to provide clarity. It is conceivable that the outer conductor connection device 15 is arranged around most of the outer regions of the first outer conductor layer 9 and the second outer conductor layer 10, or most of the outer region of the substrate 3, or almost completely on the outer regions of the first outer conductor layer and the second outer conductor layer, or on the outer region of the substrate.
[0115] In this case, the width of the inner conductor trace 13 of the inner conductor 12 is smaller than the width of the first outer conductor layer 9 and the second outer conductor layer 10.
[0116] The first outer conductor layer 9 surrounds the center 16 of the first outer layer 4 with its first out-of-plane conductor winding. The first outer conductor layer 9 extends one turn around the center 16 of the first outer layer 4 with its first out-of-plane conductor winding. The second outer conductor layer 10 surrounds the center 16 of the second outer layer 5 with its second out-of-plane conductor winding. The second outer conductor layer 10 extends one turn around the center 16 of the second outer layer 5 with its second out-of-plane conductor winding. The first portion 14a of the inner conductor trace 13 surrounds the center 17 of the first intermediate layer 6. The first portion 14a of the inner conductor trace 13 extends 1.5 turns around the center 17 of the first intermediate layer 6. The second portion 14b of the inner conductor trace 13 surrounds the center 17 of the second intermediate layer 7. The second portion 14b of the inner conductor trace 13 extends 1.5 turns around the center 17 of the second intermediate layer 7. This produces an overall transformation ratio of 1:9. In this case, the first portion 14a of the planar inner conductor winding of the inner conductor trace 13 has the same number of turns as the second portion 14b of the planar inner conductor winding of the inner conductor trace 13.
[0117] The first outer-plane conductor winding of the first outer conductor layer 9 is separated by a gap 18, thereby forming a first end 9a and a second end 9b. The second outer-plane conductor winding of the second outer conductor layer 10 is separated by a gap 18, thereby forming a first end 10a and a second end 10b. In this case, the gap 18 between the first outer conductor layer 9 and the second outer conductor layer 10 is arranged to overlap each other in the plan view.
[0118] In the plan view of the gap 18 between the first outer conductor layer 9 and the second outer conductor layer 10, the first portion 14a and / or the second portion 14b of the in-plane conductor winding of the inner conductor 13 crosses the gap 18 between the first outer conductor layer 9 and the second outer conductor layer 10 at a right angle on the first intermediate layer sheet 6 or the second intermediate layer sheet 7. The angle is a right angle here, but of course, it does not necessarily have to be a right angle. Angles in the range of 45° to 90° are also possible, with 90° being the most suitable.
[0119] The first portion 14a of the planar inner conductor winding of the inner conductor 13 on the first intermediate layer 6 extends in the same direction as the second portion 14b of the planar inner conductor winding of the inner conductor 13 on the second intermediate layer 7. In this case, both the first portion 14a and the second portion extend clockwise around the center 17.
[0120] The substrate 3 includes a via 19 through which the inner conductor trace 13 transitions from the first intermediate layer 6 to the second intermediate layer 7. Then, the transition from the first portion 14a to the second portion 14b of the planar inner conductor winding of the inner conductor 13 occurs in the region of the via 19 or the region of the via.
[0121] Figure 2A It shows Figure 1The diagram shows a plan view of the first outer layer 4, which has an outer conductor 8 and a first outer conductor layer 9. In the plan view, the first outer conductor layer 9 is rectangular. The conversion module 1 also includes a power supply terminal 20, specifically a power supply terminal in the form of a DC voltage terminal. The power supply terminal 20 is connected to the first outer conductor layer 9 at a feed point 21, which is arranged opposite to the gap 18, so that a straight line 22 passing through the gap 18 also passes through the feed point 21.
[0122] Figure 2B It shows Figure 1 A plan view of the first portion 14a of the planar inner conductor winding of the inner conductor 12 and the inner conductor trace 13. The first portion 14a extends 1.5 turns around the center 17 of the first intermediate layer 6.
[0123] Figure 2C It shows Figure 1 Plan view of the second part 14b of the inner conductor winding of the inner conductor 12 and the inner conductor trace 13. The second part 14b extends 1.5 turns around the center 17 of the second intermediate layer 7.
[0124] Figure 2D It shows Figure 1 The diagram shows a plan view of the second outer layer 5, which has an outer conductor 8 and a second outer conductor layer 10. In the plan view, the second outer conductor layer 10 is rectangular. The conversion module 1 also includes a power supply terminal 20, specifically a power supply terminal in the form of a DC voltage terminal. The power supply terminal 20 is connected to the second outer conductor layer 10 at a feed point 21, which is arranged opposite to the gap 18, so that a straight line 22 passing through the gap 18 also passes through the feed point 21.
[0125] Figure 3A and Figure 3BAn exemplary embodiment of the transformation module 1 is shown, wherein the substrate 3 comprises only a first intermediate layer 6 and a first outer layer 4 and a second outer layer 5. The substrate 3 includes a via 19 through which the inner conductor trace 13 transitions from the first intermediate layer 6 to the first outer layer 4. The inner conductor trace may also transition to the second outer layer 5. A second portion 14b of the planar inner conductor winding of the inner conductor trace 13 extends partially or completely through the gap 18 of the first outer conductor layer 9 on the first outer layer 4, and the second portion 14b of the planar inner conductor winding of the inner conductor trace 13 transitions back from the first outer layer 4 to the first intermediate layer 6 via an additional via 23, but preferably, extends further from the center 17 of the first intermediate layer 6 than the second portion before transitioning into the first outer layer 4 or the first portion 14a of the planar inner conductor winding of the inner conductor trace 13 before transitioning into the first outer layer 4. In this way, the inner conductor 12 is also guided out from the first intermediate layer 6 again. In this configuration, both the first inner conductor end 13a and the second inner conductor end 13b of the inner conductor 12 abut against the first intermediate layer 6. Furthermore, the first inner conductor end 13a and the second inner conductor end 13b of the inner conductor trace 13 are arranged on the same side of the substrate 3. In this configuration, the first portion 14a comprises 1.5 turns, and the second portion comprises 0.5 turns, thereby extending the inner conductor 12 a total of 2 turns around the center 17 of the first intermediate layer 6 and the second intermediate layer 7. Therefore, a transformation ratio of 1:4 is achieved.
[0126] Figure 4A Further exemplary embodiments of the first outer layer 4 and / or the second outer layer 5 are shown. The shaded area shows the outer conductor connection device 15. The outer conductor connection device 15 includes a plurality of vias that electrically connect the first outer conductor layer 9 to the second outer conductor layer 10. Alternatively or additionally, the outer conductor connection device 15 includes conductive connections, particularly electroplated parts, disposed at the edge of the substrate 3 and electrically connecting the first outer conductor layer 9 to the second outer conductor layer 10.
[0127] Preferably, the plurality of vias of the outer conductor connection device 15 are along the inner boundary line 24 and the outer boundary line 25, wherein the inner conductor trace 13 extends between the inner boundary line 24 and the outer boundary line 25, thereby providing electromagnetic shielding for the inner conductor trace 13 in this region. The outer conductor connection device 15 includes at least two gaps 26, which are spaced apart from each other at the edge of the substrate 3. The inner conductor trace 13 extends from these gaps 26 on the first intermediate layer 6 and optionally the second intermediate layer 7 via its first inner conductor end 13a and second inner conductor end 13b. There are no vias between the first outer layer 4 and the second outer layer 5 at the gaps 26.
[0128] Figure 4BA further exemplary embodiment of the first intermediate layer 6 with the first portion 14a of the inner conductor trace 13 having the inner conductor 12 is shown. In this case, the substrate 3 includes a plurality of additional vias 27, wherein the additional vias 27 electrically connect the first outer conductor layer 9 to the second outer conductor layer 10, and thus also pass through the first intermediate layer 6 and optionally the second intermediate layer 7. The additional vias 27 extend between two turns of the first portion 14a of the in-plane conductor winding of the inner conductor trace 13. This optimally decouples the two turns from each other.
[0129] Figure 5 An RF amplifier device 50, particularly a push-pull amplifier device, is shown, comprising a first transistor 51, a second transistor 52, and a conversion module 1. The RF amplifier device 50 includes a signal input 53 to which an RF signal to be amplified can be applied. The signal input 53 is connected to a first inner conductor terminal 13a of an inner conductor trace 13 of an inner conductor 12. A second inner conductor terminal 13b of the inner conductor trace 13 of the inner conductor 12 is connected to a reference ground 54. The respective first terminals 9a and 10a of a first outer conductor layer 9 and a second outer conductor layer 10 are connected to the gate terminal of the first transistor 51 via a first connection 55. The respective second terminals 9b and 10b of the first outer conductor layer 9 and the second outer conductor layer 10 are connected to the gate terminal of the second transistor 52 via a second connection 56.
[0130] The RF amplifier device 50 includes a power supply input 57 connected to a power supply terminal 20 on the first outer conductor layer 9 and / or the second outer conductor layer 10 of the conversion module 1. Preferably, a DC voltage is provided to the power supply input 57 to power the first transistor 51 and the second transistor 52.
[0131] The RF amplifier device 50 includes a first impedance matching circuit 58 to transform the input impedance at the first outer conductor terminal 11a of the first conversion module terminal 2a of the conversion module 1 to the input impedance of the first transistor 51. For this purpose, the first impedance matching circuit 58 includes a corresponding capacitor and an inductor. The first impedance matching circuit 58 is arranged in the first connection 55.
[0132] The RF amplifier device 50 also includes a second impedance matching circuit 59 to transform the input impedance at the second outer conductor terminal 11b of the first conversion module terminal 2a of the conversion module 1 to the input impedance of the second transistor 52. For this purpose, the second impedance matching circuit 59 includes a corresponding capacitor and an inductor. The second impedance matching circuit 59 is arranged in the second connection 56.
[0133] Furthermore, the emitter terminals of the first transistor 51 and the second transistor 52 are preferably connected to a reference ground. A first signal output 60 is connected to the collector terminal of the first transistor 51. A second signal output 61 is connected to the collector terminal of the second transistor 52.
[0134] The conversion module, not shown here, can also be designed for high power, particularly power greater than or equal to 200 W, and is specifically designed to be connected to the first signal output 60 and the second signal output 61 of the RF amplifier device 50 as described above.
[0135] Therefore, the differential signal outputs 60, 61 of the RF amplifier device 50 can be configured as asymmetrical outputs between RF power signals having the aforementioned high power, particularly greater than or equal to 200 W, wherein one terminal can be on the reference ground 54 and the other terminal can be connected to the load as an RF signal.
[0136] Specifically, it can be envisioned that the corresponding design of the transformation module 1 is connected to the first signal output 60 via its first terminals 9a and 10a, and connected to the second signal output 61 via its second terminals 9b and 10b.
[0137] In the same case, the power supply terminal 20 can preferably be used to provide DC power to the RF amplifier device 50.
[0138] The inner conductor 12 can be connected to the load via its first inner conductor end 13a, which serves as an RF signal.
[0139] The inner conductor 12 can be connected to the reference ground via its second inner conductor end 13b.
[0140] This allows the load to operate between the RF power signal and the reference ground, as is typically expected.
[0141] Figure 6 A device 100 for accelerating charged particles, particularly in the form of a particle accelerator, is shown. In this case, device 100 includes a plurality of RF amplifier devices 50 arranged in a rack system 101. Device 100 includes a plurality of RF resonators 102. The RF resonators 102 are preferably connected to a first signal output 60 and a second signal output 61 of the RF amplifier devices 50.
[0142] This invention is not limited to the exemplary embodiments described. During development, unless otherwise stated, all described and / or drawn features may be combined as needed.
Claims
1. A conversion module (1) for converting a first input impedance at a first conversion module terminal (2a) to a second input impedance at a second conversion module terminal (2b), said conversion module being used in an RF amplifier device (50), particularly a push-pull amplifier device, preferably in a device (100) for accelerating charged particles, wherein, The transformation module (1) has a multi-layer chip structure and includes the following features: - A multilayer planar substrate (3), particularly a circuit board, is provided, the multilayer planar substrate having a first outer layer (4), a second outer layer (5) and a first intermediate layer (6) disposed between the first outer layer (4) and the second outer layer (5). - An outer conductor (8) is arranged on or in the substrate (3), the outer conductor having a first outer conductor layer (9) and a second outer conductor layer (10), wherein the first outer conductor layer (9) is arranged on or in the first outer sheet (4) in the form of a first planar outer conductor winding having a first end and a second end (9a, 9b), and wherein the second outer conductor layer (10) is arranged on or in the second outer sheet (5) in the form of a second planar outer conductor winding having a first end and a second end (10a, 10b); - The first outer conductor layer (9) and the second outer conductor layer (10) are electrically connected to each other. The first ends (9a, 10a) of the first outer conductor layer (9) and the second outer conductor layer (10) respectively form the first outer conductor terminal (11a) of the first conversion module terminal (2a), and the second ends (9b, 10b) of the first outer conductor layer (9) and the second outer conductor layer (10) respectively form the second outer conductor terminal (11b) of the first conversion module terminal (2a). - An inner conductor (12) is arranged on or in the substrate (3), the inner conductor having an inner conductor trace (13). - The inner conductor trace (13) extends as an in-plane conductor winding, at least a first portion (14a) of which is arranged in the first intermediate layer (6), and the inner conductor trace (13) is covered by the first outer conductor layer (9) in the direction of the first outer layer (4) and by the second outer conductor layer (10) in the direction of the second outer layer (5). - The inner conductor trace (13) includes a first inner conductor end (13a) and a second inner conductor end (13b), the two inner conductor ends (13a, 13b) forming the second conversion module terminal (2b). - The first out-of-plane conductor winding, the second out-of-plane conductor winding, and the in-plane conductor winding are arranged in a plan view to overlap each other substantially, such that a predetermined electrical and magnetic coupling is established between the first out-of-plane conductor winding and the second out-of-plane conductor winding and the in-plane conductor winding; - An outer conductor connection device (15) is arranged on or in the substrate (3), and the outer conductor connection device electrically connects the first outer conductor layer and the second outer conductor layer (9, 10) to each other, such that the outer conductor connection device (15) together with the first outer conductor layer (9) and the second outer conductor layer (10) forms an outer conductor shell, which mainly surrounds the planar conductor winding of the inner conductor trace (13) of the inner conductor (12) in an RF-sealed manner.
2. The transformation module (1) according to claim 1, characterized by the following features: - The outer conductor connection device (15) is arranged at least partially, preferably primarily, on the outer region of at least one of the following: ○ The planar substrate (3). ○ The first outer conductor layer (9) or ○ The second outer conductor layer (10).
3. The transformation module (1) according to any one of claims 1 to 2, characterized by the following features: - The conversion module (1) is capable of operating in a frequency range from 40 MHz to 400 MHz, and particularly in a frequency range from 100 MHz to 200 MHz.
4. The transformation module (1) according to any one of the preceding claims, characterized by the following features: - The width of the inner conductor trace (13) is smaller than the width of the first outer conductor layer and the second outer conductor layer (9, 10).
5. The transformation module (1) according to any one of the preceding claims, characterized by the following features: - The substrate (3) includes a second intermediate layer (7), wherein the first intermediate layer (6) and the second intermediate layer (7) are disposed between the first outer layer and the second outer layer (4, 5); - The inner conductor trace (13) is also arranged on the second intermediate layer (7).
6. The transformation module (1) according to claim 5, characterized by the following features: - The substrate (3) includes a via (19) through which the inner conductor trace (13) transitions from the first intermediate layer (6) to the second intermediate layer (7).
7. The transformation module (1) according to claim 5 or 6, characterized by the following features: - At least a second portion (14b) of the planar inner conductor winding of the inner conductor trace (13) is arranged in the second intermediate layer (7), the inner conductor trace (13) is covered by the first outer conductor layer (9) in the direction of the first outer layer (4) and by the second outer conductor layer (10) in the direction of the second outer layer (5).
8. The transformation module (1) according to any one of the preceding claims, characterized by the following features: - The first inner conductor end (13a) and the second inner conductor end (13b) of the inner conductor trace (13) are arranged on the same side of the substrate (3).
9. The transformation module (1) according to any one of the preceding claims, characterized by the following features: - The outer conductor connection device (15) includes a plurality of vias that electrically connect the first outer conductor layer (9) to the second outer conductor layer (10); and / or - The outer conductor connection device (15) includes a conductive connection portion, particularly an electroplated part, which is arranged at the edge of the substrate (3) and electrically connects the first outer conductor layer (9) to the second outer conductor layer (10).
10. An RF amplifier device (50), particularly an RF amplifier device in the form of a push-pull amplifier device, having a first transistor (51), a second transistor (52), and a conversion module (1) constructed according to any one of the preceding claims, the RF amplifier device having the following features: - A signal input (53) is provided, and the RF signal to be amplified can be applied to the signal input. The signal input (53) is connected to the first inner conductor end (13a) of the inner conductor trace (13). - The second inner conductor end (13b) of the inner conductor trace (13) is connected to the reference ground; - The first ends (9a, 10a) of the first outer conductor layer (9) and the second outer conductor layer (10) are connected to the gate terminal of the first transistor (51) via the first connection (55); - The second ends (9b, 10b) of the first outer conductor layer (9) and the second outer conductor layer (10) are connected to the gate terminal of the second transistor (52) via the second connection (56).
11. The RF amplifier device (50) according to claim 10, characterized by the following features: - A power input (57) is provided, which is connected to the power supply terminal (20) on the first outer conductor layer and / or the second outer conductor layer (9, 10) of the conversion module (1).
12. A device (100) for accelerating charged particles, particularly a device in the form of a particle accelerator, wherein, The device has at least one RF amplifier device (50) constructed according to any one of claims 10 to 11.