High-density three-dimensional packaging structure of anti-radiation thick-film power supply and method thereof

Abstract

The invention discloses a high-density three-dimensional packaging structure of an anti-radiation thick film power supply and a method thereof, and relates to the technical field of high-density three-dimensional packaging. The multi-layer substrate is arranged in the shell and comprises a first substrate used for bearing the power circuit and a second substrate used for bearing the signal circuit; wherein the first substrate forms a base of the shell, and the second substrate is vertically arranged and fixed on the first substrate and is connected with the side wall of the shell, so that the power circuit and the signal circuit are separated in space; the first substrate is provided with a first interconnection area, the second substrate is correspondingly provided with a second interconnection area, and the first interconnection area and the second interconnection area are electrically connected through a conductive structure, so that the power circuit and the signal circuit are electrically interconnected. The space utilization rate of the packaging cavity is greatly improved, complex wiring of inductive devices and the like is simplified, and the process robustness of overall assembly and the reliability of long-term work in a space radiation environment are improved.

Description

Technical Field

[0001] This invention relates to the field of high-density three-dimensional packaging technology, and in particular to a high-density three-dimensional packaging structure and method for a radiation-resistant thick-film power supply. Background Technology

[0002] With the increasing demand for high performance, high reliability, miniaturization and lightweight in space electronic equipment such as spaceborne and airborne systems, radiation-resistant thick-film power supplies, as the core power supply modules, also need to achieve higher power density and stronger environmental adaptability within a limited volume.

[0003] Currently, traditional radiation-hardened thick-film power supplies mostly employ planar hybrid integrated packaging technology based on ceramic film-forming substrates such as Al2O3. This involves simultaneously assembling power devices, inductive devices, and signal control devices on a single planar substrate, and achieving electrical interconnection through bonding and soldering. However, this planar packaging structure has the following drawbacks: First, the planar layout means that the vertical space of the packaging cavity cannot be effectively utilized, and the devices can only be placed in a single layer or a limited number of layers. Under the condition of strict volume constraints, it is difficult to further increase the output power, which cannot meet the urgent needs of modern equipment for miniaturization and lightweight power modules.

[0004] Furthermore, since the power circuit and signal circuit are located on the same plane, the high-frequency noise, switching surges, and electromagnetic radiation generated when the power devices are working can easily couple to nearby signal traces and sensitive chips, causing control signal distortion and false triggering. This problem is particularly prominent in complex space radiation environments, directly affecting the stability and reliability of the power supply.

[0005] In addition, inductive devices are large in size and have special pin distributions, which often require long-distance traces for connection in planar layouts. This not only occupies valuable substrate area, but also introduces additional parasitic parameters and impedance discontinuities, increasing layout complexity and manufacturing difficulty, and affecting the overall circuit performance and reliability.

[0006] To address this, the industry has attempted to improve integration through multi-layer wiring and three-dimensional device stacking, but these methods are still largely limited to small-scale three-dimensional integration of signal circuits and have failed to systematically solve key issues such as power and signal partitioning and isolation, efficient space utilization, and highly reliable three-dimensional interconnection. Summary of the Invention

[0007] In a first aspect, to solve the above-mentioned technical problems, this invention provides a high-density three-dimensional packaging structure for a radiation-resistant thick-film power supply, comprising: shell; The multilayer substrate built into the housing includes a first substrate for carrying power circuits and a second substrate for carrying signal circuits. in: The first substrate forms the base of the housing, and the second substrate is erected and fixed on the first substrate and connected to the side wall of the housing, so that the power circuit and the signal circuit are arranged separately in space. The first substrate has a first interconnect region, and the second substrate has a corresponding second interconnect region. The first interconnect region and the second interconnect region are electrically connected through a conductive structure, so that the power circuit and the signal circuit are electrically interconnected.

[0008] Further: The first substrate carries and is electrically connected to power devices and inductive devices; Signal circuit devices are disposed on at least one surface of the second substrate.

[0009] Further: The surface of the first substrate is divided into a power device mounting area, an inductive device mounting area, and the first interconnect area; The surface of the second substrate is divided into a bare chip mounting area, a resistor-capacitor component mounting area, and a second interconnect area.

[0010] Further: The first interconnect region includes pads and gold conductive strips formed on the surface of the first substrate; The second interconnect region includes pads formed on the surface of the second substrate near the first substrate.

[0011] Furthermore, the second substrate is welded and fixed to the first interconnection area on the first substrate through the welding portion at its bottom, and is bonded and fixed to the side wall of the housing through the adhesive portion on its side.

[0012] Furthermore, the first substrate and / or the second substrate are provided with through conductive vias to vertically interconnect different conductive layers or to interconnect with the lead-out ends of the housing.

[0013] Preferably, the outer shell is an integrated ceramic tube shell.

[0014] Furthermore, the integrated ceramic housing is an HTCC ceramic housing or an LTCC ceramic housing.

[0015] Furthermore, the top of the housing is provided with a metal cover plate to form an airtight seal.

[0016] In a second aspect, the present invention provides a high-density stereolithography method for realizing the radiation-resistant thick-film power supply with the aforementioned structure, comprising the following steps: A ceramic integrated housing is provided, the base portion of which serves as the first substrate for carrying the power circuit, and the power circuit is fabricated on the first substrate and power devices and inductive devices are mounted thereon. A second substrate for carrying signal circuits is prepared. The second substrate has a multilayer wiring structure, and signal circuits are fabricated and signal circuit components are mounted on at least one of its main surfaces. The second substrate is fixed to the first substrate in an upright manner, and the second substrate is connected to the side wall of the outer casing; The power circuit and the signal circuit are electrically connected through the first interconnection area on the first substrate and the second interconnection area on the second substrate. The outer casing is hermetically sealed.

[0017] Further: The step of fixing the second substrate to the first substrate in an upright manner specifically includes: soldering the pads on the bottom of the second substrate to the corresponding pads on the first substrate using solder. The connection between the second substrate and the side wall of the housing specifically includes: using insulating adhesive to bond the side of the second substrate to the corresponding side wall of the housing.

[0018] Further: The electrical connection between the power circuit and the lead-out terminal of the housing is achieved through multilayer wiring and conductive vias inside the first substrate. The electrical connections between the layers of the signal circuit are achieved through multilayer wiring and conductive vias inside the second substrate.

[0019] Furthermore, both the first substrate and the second substrate are manufactured using a high-temperature co-fired ceramic process or a low-temperature co-fired ceramic process.

[0020] Compared with the prior art, the embodiments of the present invention have the following beneficial effects: This invention utilizes a base with an integrated ceramic housing as the power circuit substrate and erects a multi-layered signal circuit substrate, forming a high-density three-dimensional packaging structure. This significantly improves the space utilization of the packaging cavity, resulting in a substantial reduction in product size. It also successfully achieves physical separation and partitioning of the power circuit and signal circuit in three-dimensional space, effectively suppressing electromagnetic interference from power switching noise and spatial radiation to sensitive signal circuits. Simultaneously, this structure centrally arranges large-size inductive devices and heat-generating power devices on the base substrate, optimizing the heat dissipation path and ensuring the safe spacing required for high-voltage insulation, resolving the contradiction between heat dissipation and high-voltage isolation in traditional planar packaging. Furthermore, a dedicated interconnection area between the base substrate and the erected substrate enables highly reliable electrical connections, simplifying complex wiring for inductive devices and improving the overall assembly process robustness and long-term reliability under spatial radiation environments. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply disclosed in an embodiment of the present invention; Figure 2 This is a schematic diagram of the partitioning of the power circuit board disclosed in an embodiment of the present invention; Figure 3a This is a schematic diagram of the A-side of the signal circuit substrate disclosed in an embodiment of the present invention; Figure 3b This is a schematic diagram of the bottom section of the signal circuit substrate disclosed in an embodiment of the present invention; Figure 3c This is a schematic diagram of side B of the signal circuit substrate disclosed in an embodiment of the present invention.

[0023] In the picture: 100. Outer casing; 101. Outer casing lead-out end; 102. Cover plate; 110. Multilayer substrate for power circuit; 111. Power chip; 111a. Power input area; 111b. Power output area; 112. Inductive device; 112a. First inductive device placement area; 112b. Second inductive device placement area; 112c. Inductive device soldering area; 113. Interconnect soldering area; 120. Signal circuit multilayer substrate; 120a. Surface A; 120b. Bottom surface; 120c. Surface B; 121. Ring frame sidewall connector; 122. Bare chip; 123. Bonding wire. Detailed Implementation

[0024] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] This invention aims to provide a high-density three-dimensional packaging structure and method for radiation-resistant thick-film power supplies. Through structural innovation, it achieves three-dimensional partitioning, high-density integration, and high-reliability interconnection of power circuits and signal circuits.

[0026] Please see Figure 1 The packaging structure mainly includes a housing 100 and a multilayer substrate built into the housing 100. The multilayer substrate includes a first substrate for carrying power circuitry (i.e.,...). Figure 1 The power circuit multilayer substrate 110 and the second substrate for carrying signal circuits (i.e., Figure 1 (The signal circuit multilayer substrate 120 in the middle).

[0027] The outer casing 100 is an integrated ceramic casing, preferably an HTCC ceramic casing, but it can also be replaced with an LTCC ceramic casing. Both the power circuit multilayer substrate 110 and the signal circuit multilayer substrate 120 are manufactured using either a high-temperature co-fired ceramic process or a low-temperature co-fired ceramic process.

[0028] The multilayer substrate 110 of the power circuit forms the base of the housing 100. This integrated design eliminates the interface and additional mechanical connection between the power substrate and the housing base in the traditional structure, improving the mechanical strength and integrity of the structure. On the other hand, the integrated ceramic substrate provides an excellent heat conduction path for the power devices, and the heat can be directly and effectively dissipated through the base, solving the problem of concentrated heat dissipation of the power section.

[0029] The signal circuit multilayer substrate 120 is erected and fixed on the power circuit multilayer substrate 110 and connected to the side wall of the housing, so that the power circuit and the signal circuit are spatially separated. The power circuit multilayer substrate 110 carries and electrically connects the power chip 111 and the inductive device 112; the signal circuit multilayer substrate 120 has signal circuit devices disposed on at least one surface.

[0030] In a further embodiment, the power circuit multilayer substrate 110 has a first interconnection area, and the signal circuit multilayer substrate 120 has a corresponding second interconnection area. The first interconnection area and the second interconnection area are electrically connected through a conductive structure, thereby electrically interconnecting the power circuit and the signal circuit. The first interconnection area includes pads and gold conductive strips formed on the surface of the power circuit multilayer substrate 110; the second interconnection area includes pads formed on the surface of the signal circuit multilayer substrate 120 near the power circuit multilayer substrate 110. This direct soldering interconnection method offers high connection strength, low resistance, good consistency, and completely avoids the messiness and unreliability of traditional long-distance crossover wires.

[0031] In one specific embodiment, please refer to Figure 2 The surface of the power circuit multilayer substrate 110 is divided into a power input area 111a, a power output area 111b, a first inductive device placement area 112a, a second inductive device placement area 112b, an inductive device soldering area 112c, and a first interconnect area (i.e., Figure 2 The interconnect soldering area 113 is included. The power input area 111a and power output area 111b are used to house high-voltage filter capacitors, power switching transistors (such as power MOSFETs), etc., and the partitioned layout ensures safe isolation of high-voltage traces. The first inductive device placement area 112a, the second inductive device placement area 112b, and the inductive device soldering area 112c are provided with recessed or planar areas for mounting large-volume inductive devices 112 such as transformers and inductors. Transformers can be bonded to the recessed area using insulating thermally conductive adhesive to enhance heat dissipation and fixation, while inductors can be fixed using insulating adhesive film. All lead soldering points of the inductive devices 112 (interconnect soldering area 113) are carefully arranged and concentrated in a specific area on the surface of the substrate. This design completely solves the problems of difficult routing and large area occupation caused by the special size and lead positions of inductive devices, making subsequent connections to signal circuits simple and orderly.

[0032] In one specific embodiment, please refer to Figure 3a , Figure 3b and Figure 3c The signal circuit multilayer substrate 120 is soldered and fixed to the first interconnection area on the power circuit multilayer substrate 110 via its bottom soldering portion, and is bonded and fixed to the side wall of the housing 100 via its side adhesive portion. Specifically, the bottom surface 120b of the signal circuit multilayer substrate 120 is provided with solder pads, which are soldered and fixed to the interconnection soldering area 113 of the power circuit multilayer substrate 110 via a reflow soldering process. At the same time, the connectors 121 on the side walls of the ring frame on both sides of the signal circuit multilayer substrate 120 are bonded to the inner side wall of the housing 100 with insulating adhesive. This dual fixing mechanism of "bottom soldering + side bonding" ensures the absolute stability of the vertically mounted signal circuit multilayer substrate 120 in spatial environments such as severe vibration and impact.

[0033] High-density assembly of the signal circuit multilayer substrate 120, which is double-fixed to the power circuit multilayer substrate 110 and the sidewall of the housing 100 by bottom welding and side bonding, is achieved. Its surface is also optimized with partitioning. The A-side (near the power circuit side) of the multilayer substrate 120 for signal circuits has a mounting area for resistive and capacitive components, where passive devices such as chip resistors and capacitors are soldered. This layout brings signal conditioning and filtering circuits closer to the power section, shortening the path for feedback and control signals.

[0034] A bare chip mounting area is provided on side B (near the casing ring frame) of the signal circuit multilayer substrate 120, where critical signal processing bare chips 122 are bonded using conductive adhesive. The electrode terminals of the chip are connected to the pads on the surface of the signal circuit multilayer substrate 120 via bonding wires 123.

[0035] Those skilled in the art will understand that by placing sensitive bare chips on the side of the multilayer substrate 120 away from high-interference power areas and utilizing the shielding effect of the substrate itself, the direct coupling interference from power switching noise and spatial radiation is greatly reduced. Simultaneously, double-sided assembly significantly reduces the projected area occupied by the signal circuits compared to traditional single-sided planar layouts, which is key to achieving high-density integration.

[0036] The bottom surface of the signal circuit multilayer substrate 120 is an interconnect bonding area. Through-hole conductive vias are provided in the power circuit multilayer substrate 110 and / or the signal circuit multilayer substrate 120 to vertically interconnect different conductive layers or to interconnect with the housing lead-out terminal 101. This built-in vertical interconnect method replaces lengthy bonding wires, reduces parasitic inductance and resistance, and improves power transmission efficiency and reliability.

[0037] After all circuit assembly, interconnection and bonding steps are completed, the top of the housing 100 is welded with a metal cover plate 102 to achieve hermetic encapsulation and ensure that the internal circuitry is protected from external atmosphere corrosion during the long lifespan of the space.

[0038] This invention also provides a high-density stereolithography method for radiation-resistant thick-film power supplies, comprising the following steps: Step 1: Provide an integrated ceramic housing 100, the base of which serves as a power circuit multilayer substrate 110 that carries the power circuit.

[0039] Step 2: Fabricate a power circuit on the power circuit multilayer substrate 110 and install power devices and inductive devices.

[0040] Step 3: Prepare a signal circuit multilayer substrate 120 for carrying signal circuits. The signal circuit multilayer substrate 120 has a multilayer wiring structure, and signal circuits are fabricated and signal circuit components are mounted on at least one of its main surfaces.

[0041] Step 4: First, fix the signal circuit multilayer substrate 120 onto the power circuit multilayer substrate 110 in an upright manner; then connect the signal circuit multilayer substrate 120 to the side wall of the housing 100.

[0042] Specifically, the pads on the bottom of the signal circuit multilayer substrate 120 are soldered and fixed to the corresponding pads on the power circuit multilayer substrate 110 using solder; and insulating adhesive is used to bond the side of the signal circuit multilayer substrate 120 to the corresponding side wall of the housing 100.

[0043] Step 5: Connect the power circuit and the signal circuit through the first interconnection area on the power circuit multilayer substrate 110 and the second interconnection area on the second substrate.

[0044] Specifically, the electrical connection between the power circuit and the housing lead-out terminal 101 is achieved through multi-layer wiring and conductive vias inside the power circuit multi-layer substrate 110; the electrical connection between the layers of the signal circuit is achieved through multi-layer wiring and conductive vias inside the signal circuit multi-layer substrate 120.

[0045] Step 6: Perform hermetic sealing on the outer casing 100.

[0046] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-density three-dimensional packaging structure for a radiation-resistant thick-film power supply, characterized in that, include: shell; The multilayer substrate built into the housing includes a first substrate for carrying power circuits and a second substrate for carrying signal circuits. in: The first substrate forms the base of the housing, and the second substrate is erected and fixed on the first substrate and connected to the side wall of the housing, so that the power circuit and the signal circuit are arranged separately in space. The first substrate has a first interconnect region, and the second substrate has a corresponding second interconnect region. The first interconnect region and the second interconnect region are electrically connected through a conductive structure, so that the power circuit and the signal circuit are electrically interconnected.

2. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1, characterized in that: The first substrate carries and is electrically connected to power devices and inductive devices; Signal circuit devices are disposed on at least one surface of the second substrate.

3. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1 or 2, characterized in that: The surface of the first substrate is divided into a power device mounting area, an inductive device mounting area, and the first interconnect area; The surface of the second substrate is divided into a bare chip mounting area, a resistor-capacitor component mounting area, and a second interconnect area.

4. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1, characterized in that: The first interconnect region includes pads and gold conductive strips formed on the surface of the first substrate; The second interconnect region includes pads formed on the surface of the second substrate near the first substrate.

5. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1, characterized in that, The second substrate is welded and fixed to the first interconnection area on the first substrate through the welding part at its bottom, and is bonded and fixed to the side wall of the housing through the adhesive part on its side.

6. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1, characterized in that, The first substrate and / or the second substrate are provided with through conductive vias to vertically interconnect different conductive layers or to interconnect with the lead-out ends of the housing.

7. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1, characterized in that, The outer shell is a ceramic integrated tube shell.

8. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 7, characterized in that, The integrated ceramic housing is either an HTCC ceramic housing or an LTCC ceramic housing.

9. The high-density three-dimensional packaging structure of the radiation-resistant thick-film power supply according to claim 1, characterized in that, The top of the housing is provided with a metal cover to form an airtight seal.

10. A method for high-density three-dimensional packaging of a radiation-resistant thick-film power supply implementing the packaging structure described in any one of claims 1-9, characterized in that, Includes the following steps: A ceramic integrated housing is provided, the base portion of which serves as the first substrate for carrying the power circuit, and the power circuit is fabricated on the first substrate and power devices and inductive devices are mounted thereon. A second substrate for carrying signal circuits is prepared. The second substrate has a multilayer wiring structure, and signal circuits are fabricated and signal circuit components are mounted on at least one of its main surfaces. The second substrate is fixed to the first substrate in an upright manner, and the second substrate is connected to the side wall of the outer casing; The power circuit and the signal circuit are electrically connected through the first interconnection area on the first substrate and the second interconnection area on the second substrate. The outer casing is hermetically sealed.

11. The high-density three-dimensional packaging method for radiation-resistant thick-film power supplies according to claim 10, characterized in that: The step of fixing the second substrate to the first substrate in an upright manner specifically includes: soldering the pads on the bottom of the second substrate to the corresponding pads on the first substrate using solder. The connection between the second substrate and the side wall of the housing specifically includes: using insulating adhesive to bond the side of the second substrate to the corresponding side wall of the housing.

12. The high-density three-dimensional packaging method for radiation-resistant thick-film power supplies according to claim 10, characterized in that: The electrical connection between the power circuit and the lead-out terminal of the housing is achieved through multilayer wiring and conductive vias inside the first substrate. The electrical connections between the layers of the signal circuit are achieved through multilayer wiring and conductive vias inside the second substrate.

13. The high-density three-dimensional packaging method for radiation-resistant thick-film power supplies according to claim 10, characterized in that, Both the first substrate and the second substrate are manufactured using a high-temperature co-fired ceramic process or a low-temperature co-fired ceramic process.

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