Preparation method of resistive random access memory based on sapphire substrate Mn-doped gallium oxide heteroepitaxy
By growing Mn-doped β-Ga2O3 thin films and fabricating top electrodes on sapphire substrates using LPCVD technology, the problems of low on/off ratio and insufficient stability of existing resistive switching memories are solved, realizing a high-performance resistive switching memory suitable for the fabrication of high-performance memory devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-10
- Publication Date
- 2026-04-10
AI Technical Summary
Existing resistive switching memories suffer from low on/off ratios, poor process controllability, and insufficient thin film quality and uniformity, resulting in poor batch-to-batch and batch-to-batch repeatability of device performance, making it difficult to meet the stability requirements of high-density storage and high-temperature, high-field environments.
Mn-doped β-Ga2O3 films were grown on sapphire substrates using low-pressure chemical vapor deposition (LPCVD) technology. Top electrodes were fabricated by radio frequency magnetron sputtering. By precisely controlling the Mn doping concentration and thermodynamic parameters, high-quality, highly crystalline films were formed, and the morphology and stability of conductive filaments were optimized.
This invention achieves a high switching ratio and low power consumption resistive switching memory, improving device yield and reliability, and is suitable for stable operation in high temperature and high field environments.
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Figure CN121843129A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor technology, specifically relating to a method for fabricating resistive switching memory based on Mn-doped gallium oxide heteroepitaxial growth on a sapphire substrate. Background Technology
[0002] With the rapid development of the information age and the explosive growth of data, existing storage technologies face bottlenecks in capacity, speed, and energy consumption. To meet the demands of large-scale data storage, emerging storage technologies such as magnetic storage, phase-change memory, ferroelectric tunnel junctions, and resistive random access memory (RRAM) have emerged. Among them, resistive random access memory (memristors) has attracted much attention due to its advantages such as small size, non-volatility of data, and simple structure and ease of manufacturing. Of these emerging devices, resistive-resistive memory, proposed by Chua in 1971 and known as memristor, has been extensively studied. Resistive random access memory, also called memristor, is, as the name suggests, a device that remembers resistance, representing the relationship between magnetic flux and charge in a circuit. Based on this, memristor-based memory has advantages such as small size, non-volatility of data, and random access capability, and its structure is simple and easy to manufacture. Furthermore, the generation of information depends on experience or repeated stimulation, similar to the stress response in the human brain. The human brain contains approximately 10¹¹ neurons and 10¹⁵ synapses, consuming less than 20W of energy while occupying only a very small space. The working mechanism of resistive random access memory (RRAM) is similar to that of neural synapses, making it a promising candidate for applications in neuromorphic computing, artificial intelligence, sensors, and robotics. The human brain is considered the most intelligent and fastest operating system available, and neuromorphic computing, which simulates the human brain, is seen as a promising next-generation computing system. Since the natural working mechanism of RRAM is very similar to that of human brain synapses, related research has progressed rapidly and has been significantly applied in artificial intelligence, sensors, robotics, and storage devices.
[0003] β-Ga₂O₃ materials have attracted much attention due to their excellent physical properties. They possess significant advantages such as an ultra-wide bandgap of approximately 4.9 eV, high-temperature chemical stability, a high Baliga figure of merit (~3444), and low preparation costs and simple fabrication processes. These properties make them highly promising for applications in high-power high-frequency power electronic devices, solar-blind photodetectors, and gas sensors. In memory applications, β-Ga₂O₃ also shows unique advantages. Its exciton binding energy at room temperature, much higher than the thermal ionization energy (approximately 40~50 mV), ensures the stability of devices under harsh environments. Recent studies have shown that by controlling the oxygen content during the fabrication process, the conductivity of β-Ga₂O₃ can be significantly altered, resulting in good resistive switching characteristics. Furthermore, doping with the transition metal Mn provides a new dimension for controlling the resistive switching characteristics of β-Ga₂O₃. As a deep-level acceptor, Mn can not only effectively reduce the n-type background carrier concentration and achieve semi-insulation, but its multiple valence states (Mn²⁺, Mn²⁺, and Mn⁻²⁺) can also be used to control the resistive switching characteristics of β-Ga₂O₃.+ / Mn³ + The transformation of β-Ga₂O₃ provides abundant ion migration mechanisms for the formation and breakage of conductive filaments, thus significantly optimizing the performance of resistive switching memory (RSM). Combining the inherent excellent properties of the aforementioned materials with the tunability brought by Mn doping, β-Ga₂O₃ shows promise as a novel memory material, particularly suitable for RSM applications in harsh environments such as high temperature and high field. For example, Xiang Gang et al. from Sichuan University proposed a RSM structure based on Mn-doped gallium oxide, and Lin Zhenhua et al. from the Wuhu Research Institute of Xi'an University of Electronic Science and Technology proposed a single- and bipolar coexisting RSM with controllable defects in a monolayer amorphous gallium oxide, along with its fabrication method.
[0004] However, the fabrication of existing resistive random access memory (RRAM) relies on physical vapor deposition (PVD) methods such as magnetron sputtering, and achieves resistance conversion by controlling the concentration of oxygen vacancies. This method has significant technical bottlenecks: 1. Limited on / off ratio: Resistive random access memory based on oxygen vacancy migration generally has a low on / off ratio between the high resistance state (HRS) and the low resistance state (LRS), which makes it difficult to meet the requirements of high-density storage for large read margin.
[0005] 2. Poor process controllability: Precise control of oxygen vacancy concentration is extremely difficult during the PVD process. Controlling the formation by simply adjusting the oxygen flow rate is highly unpredictable and has a narrow process window, resulting in poor batch-to-batch and batch-to-batch repeatability of device performance.
[0006] 3. Thin film quality and uniformity: Thin films prepared by PVD method usually have high defect density and poor crystal quality, which directly affects the durability, stability and reliability of resistive switching memory. Summary of the Invention
[0007] To address the aforementioned problems in the prior art, this invention provides a method for fabricating a resistive switching memory based on Mn-doped gallium oxide heteroepitaxial growth on a sapphire substrate.
[0008] The technical problem to be solved by this invention is achieved through the following technical solution: A method for fabricating a resistive switching memory based on Mn-doped gallium oxide heteroepitaxy on a sapphire substrate, comprising: Step 1: Clean the sapphire substrate; Step 2: Place the molten alloy of gallium and manganese in the deposition chamber, introduce argon as the carrier gas and oxygen as the reaction gas into the chamber, and grow a Mn-doped β-Ga2O3 thin film on the cleaned sapphire substrate using the LPCVD process. Step 3: The top electrode is fabricated on the Mn-doped β-Ga2O3 thin film using radio frequency magnetron sputtering. Step 4: Perform thermal annealing on the sample after the top electrode has been prepared to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film.
[0009] Optionally, in the molten alloy of gallium and manganese, the atomic percentage of manganese in the molten alloy of gallium and manganese is 0.5%.
[0010] Optionally, the thickness of the sapphire substrate is 300μm to 600μm.
[0011] Optionally, in step 2, the evaporation temperature of the molten alloy is 900℃~1000℃.
[0012] Optionally, during the process of growing Mn-doped β-Ga2O3 thin films on cleaned sapphire substrates using LPCVD technology, the temperature inside the deposition chamber is maintained at 700℃~800℃.
[0013] Optionally, the growth time of the Mn-doped β-Ga2O3 thin film is 1h to 3h.
[0014] Optionally, in step 2, the pressure inside the deposition chamber is 100 Pa to 150 Pa, and the flow rate ratio of oxygen to argon is 1:20.
[0015] Optionally, the flow rate of argon is 100 sccm to 300 sccm, and the flow rate of oxygen is 5 sccm to 15 sccm.
[0016] Optionally, step 4 specifically includes: annealing the prepared top electrode sample at 450°C~500°C for 1 min~2 min in a N2 atmosphere to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film.
[0017] Optionally, the top electrode has a Ti / Au stacked structure.
[0018] Compared to traditional magnetron sputtering methods, the resistive switching memory fabrication method based on Mn-doped gallium oxide heteroepitaxial growth on sapphire substrates provided in this invention uses low-pressure chemical vapor deposition (LPCVD) to prepare β-Ga2O3 thin films, which can obtain high-quality, highly crystalline films, significantly reducing inherent defects and grain boundary scattering, laying the foundation for high-performance devices. Furthermore, by precisely controlling thermodynamic parameters such as precursor flow rate, temperature, and pressure, highly repeatable and stable growth can be achieved, greatly improving device yield and reliability.
[0019] Furthermore, LPCVD provides a feasible path for controlling resistive switching characteristics through impurity metal concentration. This invention employs Mn doping to replace the difficult-to-control oxygen vacancy control mechanism. Its advantages are: the Mn doping concentration can be precisely and stably controlled through the proportion of manganese in the gallium-manganese alloy, avoiding the randomness of controlling oxygen vacancies through oxygen flow rate; simultaneously, Mn, as a deep-level acceptor, has… 2+ / Mn 3+ Multivalence transitions are the core mechanism for the formation and breakage of conductive filaments. By precisely controlling the preparation process (doping concentration, growth atmosphere, growth temperature, and post-annealing), the Mn concentration and valence ratio in the β-Ga2O3 film can be precisely controlled, optimizing the morphology and stability of the conductive filaments. This results in a higher on / off ratio (thanks to a more stable high-resistivity state) and lower power consumption (thanks to a lower set / reset voltage). Attached Figure Description
[0020] Figure 1 This is a flowchart of a method for fabricating a resistive switching memory based on Mn-doped gallium oxide heteroepitaxial growth on a sapphire substrate, according to an embodiment of the present invention. Figure 2 It shows in Figure 1 The state inside the tube furnace during the preparation of Mn-doped β-Ga2O3 epitaxial thin films on a sapphire substrate, as shown in the method described. Figure 3 This is a schematic diagram of the resistive switching memory based on Mn-doped gallium oxide heteroepitaxial growth on a sapphire substrate, prepared using the method of the present invention. Figure 4 The XRD image of the Mn-doped β-Ga2O3 epitaxial film prepared in this invention is shown schematically. Figure 5 The IV curve of a resistive switching memory prepared in this invention is schematically shown when it operates at room temperature; Figure 6 The schematic diagram illustrates the operating curve of a resistive switching memory prepared in this invention at room temperature. Figure 7 The diagram schematically illustrates the IV curve of a resistive switching memory prepared in this invention operating at varying temperatures. Detailed Implementation
[0021] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.
[0022] To address the problems of low on / off ratio, insufficient device stability, and inadequate stability under high temperature and high field conditions in existing gallium oxide-based resistive switching memories (RSMs), this invention provides a method for fabricating an RSM based on Mn-doped gallium oxide heteroepitaxy on a sapphire substrate. This method achieves a high on / off ratio, low power consumption, and a relatively simple and stable fabrication process. (See [link to relevant documentation]). Figure 1 As shown, the method includes the following steps: Step 1: Clean the sapphire substrate.
[0023] Specifically, the sapphire substrate is sequentially subjected to ultrasonic cleaning with deionized water, acetone, anhydrous isopropanol, and deionized water for 3-5 minutes, and then dried.
[0024] The present invention does not limit the thickness of the sapphire substrate. For example, the thickness of the sapphire substrate can be 300μm to 600μm, but it is not limited to this.
[0025] Step 2: Place the molten alloy of gallium and manganese as raw material in the deposition chamber, introduce argon as carrier gas and oxygen as reaction gas into the chamber, and grow Mn-doped β-Ga2O3 thin film on the cleaned sapphire substrate using LPCVD process.
[0026] Specifically, such as in Figure 2 As shown, a molten alloy of gallium and manganese is placed in a deposition chamber as a raw material, and a sapphire substrate is placed in the deposition chamber at the same time. Argon and oxygen are introduced into the chamber. By controlling the temperature, pressure and gas flow rate in the chamber, Mn-doped β-Ga2O3 thin films are grown on the cleaned sapphire substrate using the LPCVD process.
[0027] Preferably, in order to improve the crystallinity of the Mn-doped β-Ga2O3 film, the atomic percentage of manganese in the molten alloy of gallium and manganese is 0.5% to 2%.
[0028] Preferably, the evaporation temperature of the molten alloy is 900℃~1000℃. During the growth of Mn-doped β-Ga2O3 thin films on cleaned sapphire substrates using LPCVD, the temperature inside the deposition chamber is maintained at 700℃~800℃. Specifically, the temperature inside the deposition chamber is first heated to 900℃~1000℃ to evaporate the molten alloy. Then, the temperature of the deposition chamber is controlled and stabilized at 700℃~800℃ for 1h~3h to allow the Mn-doped β-Ga2O3 thin film to grow on the sapphire substrate. The growth time is preferably 1h~3h.
[0029] In step 2, the pressure inside the deposition chamber is preferably 100 Pa to 150 Pa, and the flow rate ratio of oxygen to argon is preferably 1:20. For example, the flow rate of argon can be 100 sccm to 300 sccm, and the flow rate of oxygen can be 5 sccm to 15 sccm.
[0030] Step 3: The top electrode is prepared on the Mn-doped β-Ga2O3 thin film using radio frequency magnetron sputtering.
[0031] In this invention, the top electrode can be made of various materials. In one exemplary implementation, the top electrode can be a Ti / Au stacked structure. Specifically, a Ti layer is first sputtered onto a Mn-doped β-Ga2O3 thin film using radio frequency magnetron sputtering, and then an Au layer is sputtered onto the Ti layer to complete the fabrication of the top electrode. This invention does not limit the thickness of the Ti and Au layers; for example, the thickness of Ti can be 10 nm to 50 nm, and the thickness of Au can be 50 nm to 200 nm, but it is not limited to these values.
[0032] Step 4: Perform thermal annealing on the sample after the top electrode has been prepared to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film.
[0033] Specifically, the sample with the top electrode fabricated will be thermally annealed at 450℃~500℃ for 1 min~2 min in a N2 atmosphere to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film, thereby completing the fabrication of the resistive switching memory. Its device structure is as follows: Figure 3 As shown.
[0034] Compared to traditional magnetron sputtering methods, the resistive switching memory fabrication method based on Mn-doped gallium oxide heteroepitaxial growth on sapphire substrates provided in this invention uses low-pressure chemical vapor deposition (LPCVD) to prepare β-Ga2O3 thin films, which can obtain high-quality, highly crystalline films, significantly reducing inherent defects and grain boundary scattering, laying the foundation for high-performance devices. Furthermore, by precisely controlling thermodynamic parameters such as precursor flow rate, temperature, and pressure, highly repeatable and stable growth can be achieved, greatly improving device yield and reliability.
[0035] Furthermore, LPCVD provides a feasible path for controlling resistive switching characteristics through impurity metal concentration. This invention employs Mn doping to replace the difficult-to-control oxygen vacancy control mechanism. Its advantages are: the Mn doping concentration can be precisely and stably controlled through the proportion of manganese in the gallium-manganese alloy, avoiding the randomness of controlling oxygen vacancies through oxygen flow rate; simultaneously, Mn, as a deep-level acceptor, has… 2+ / Mn 3+Multivalence transitions are the core mechanism for the formation and breakage of conductive filaments. By precisely controlling the preparation process (doping concentration, growth atmosphere, growth temperature, and post-annealing), the Mn concentration and valence ratio in the β-Ga2O3 film can be precisely controlled, optimizing the morphology and stability of the conductive filaments. This results in a higher on / off ratio (thanks to a more stable high-resistivity state) and lower power consumption (thanks to a lower set / reset voltage).
[0036] based on Figure 1 In the method shown, in Example 1, the thickness of the sapphire substrate in step 1 is 300 μm. In step 2, the atomic percentage of manganese in the gallium-manganese molten alloy is 0.5%, and the evaporation temperature of the molten alloy is 900 °C. During the growth of the Mn-doped β-Ga2O3 thin film on the cleaned sapphire substrate using LPCVD, the temperature inside the deposition chamber is maintained at 700 °C, the pressure inside the deposition chamber is 100 Pa, the argon flow rate is 100 sccm, and the oxygen flow rate is 5 sccm, maintained for 1 hour to allow the Mn-doped β-Ga2O3 thin film to grow on the sapphire substrate. In step 3, the top electrode is a Ti / Au stacked structure, where the thickness of Ti is 10 nm and the thickness of Au is 50 nm. In step 4, the sample with the prepared top electrode is thermally annealed at 450 °C for 1 min in a N2 atmosphere to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film, thereby completing the fabrication of the resistive switching memory.
[0037] based on Figure 1 In the method shown, in Example 2, the thickness of the sapphire substrate in step 1 is 600 μm. In step 2, the atomic percentage of manganese in the gallium-manganese molten alloy is 2%, and the evaporation temperature of the molten alloy is 1000 °C. During the growth of the Mn-doped β-Ga2O3 thin film on the cleaned sapphire substrate using LPCVD, the temperature in the deposition chamber is maintained at 800 °C, the pressure in the deposition chamber is 150 Pa, the argon flow rate is 300 sccm, and the oxygen flow rate is 15 sccm, maintained for 3 hours to allow the Mn-doped β-Ga2O3 thin film to grow on the sapphire substrate. The top electrode in step 3 is a Ti / Au stacked structure, where the thickness of Ti is 50 nm and the thickness of Au is 200 nm. In step 4, the sample with the prepared top electrode is thermally annealed at 550 °C for 2 minutes in a N2 atmosphere to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film, thereby completing the fabrication of the resistive switching memory.
[0038] based on Figure 1In the method shown in Example 3, the thickness of the sapphire substrate in step 1 is 500 μm. In step 2, the atomic percentage of manganese in the gallium-manganese molten alloy is 1%, and the evaporation temperature of the molten alloy is 950 °C. During the growth of the Mn-doped β-Ga2O3 thin film on the cleaned sapphire substrate using LPCVD, the temperature in the deposition chamber is maintained at 750 °C, the pressure in the deposition chamber is 120 Pa, the argon flow rate is 200 sccm, and the oxygen flow rate is 10 sccm, maintained for 2 hours to allow the Mn-doped β-Ga2O3 thin film to grow on the sapphire substrate. The top electrode in step 3 is a Ti / Au stacked structure, where the thickness of Ti is 20 nm and the thickness of Au is 100 nm. In step 4, the sample with the prepared top electrode is thermally annealed at 470 °C for 1~1.5 min in a N2 atmosphere to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film, thereby completing the fabrication of the resistive switching memory.
[0039] Based on the resistive switching memory prepared in Example 3, Figure 4 The XRD (X-Ray Diffraction) images of its Mn-doped β-Ga2O3 thin film are shown. Figure 4 As can be seen, the Mn-doped Ga2O3 thin film prepared by the LPCVD process of this invention has high crystallinity. Figure 5 The IV curve of the resistive switching memory at room temperature was obtained. The high-resistivity current and low-resistivity current can be extracted to calculate the switching ratio. The set voltage and reset voltage can be read to confirm that the resistive switching memory has the expected resistive switching function and excellent basic performance parameters. Figure 6 The circuit curves of the resistive switching memory at room temperature are shown, based on... Figure 6 It can be determined that the resistive random access memory is stable and reliable in multiple operations and can meet the basic requirements for practical use. Figure 7 The IV curves of the resistive switching memory are shown, and it can be seen that it can still work stably at high temperatures, which is mainly attributed to the stable deep-level multi-valence transition mechanism brought about by Mn doping.
[0040] In summary, this invention utilizes LPCVD technology to prepare Mn-doped β-Ga2O3 thin films, and then uses these Mn-doped β-Ga2O3 thin films to prepare resistive switching memory, thus solving the problems of low on / off ratio, insufficient device stability, and insufficient working stability under high temperature and high field conditions in existing gallium oxide-based resistive switching memory.
[0041] It should be noted that the terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the invention.
[0042] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Furthermore, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.
[0043] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings and the disclosure in carrying out the claimed invention. In the description of the invention, the word "comprising" does not exclude other components or steps, "a" or "an" does not exclude a plurality, and "a plurality" means two or more, unless otherwise explicitly specified. Furthermore, while different embodiments may describe certain measures, this does not mean that these measures cannot be combined to produce good results.
[0044] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0045] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0046] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0047] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.
Claims
1. A method for fabricating a resistive random access memory based on a hetero-epitaxy of Mn-doped gallium oxide on a sapphire substrate, characterized in that, include: Step 1: Clean the sapphire substrate; Step 2: Place the molten alloy of gallium and manganese in the deposition chamber, introduce argon as the carrier gas and oxygen as the reaction gas into the chamber, and grow a Mn-doped β-Ga2O3 thin film on the cleaned sapphire substrate using the LPCVD process. Step 3: The top electrode is fabricated on the Mn-doped β-Ga2O3 thin film using radio frequency magnetron sputtering. Step 4: Perform thermal annealing on the sample after the top electrode has been prepared to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film.
2. The production method according to claim 1, characterized by, The atomic percentage of manganese in the molten alloy of gallium and manganese is 0.5% to 2%.
3. The preparation method according to claim 1, characterized in that, The thickness of the sapphire substrate is 300μm~600μm.
4. The method of claim 1, wherein, In step 2, the evaporation temperature of the molten alloy is 900℃~1000℃.
5. The preparation method according to claim 1, characterized in that, During the process of growing Mn-doped β-Ga2O3 thin films on cleaned sapphire substrates using LPCVD, the temperature inside the deposition chamber was maintained at 700℃~800℃.
6. The production method according to claim 5, wherein The growth time of the Mn-doped β-Ga2O3 thin film is 1h to 3h.
7. The preparation method according to claim 1, characterized in that, In step 2, the pressure inside the deposition chamber is 100 Pa to 150 Pa, and the flow rate ratio of oxygen to argon is 1:
20.
8. The preparation method according to claim 7, characterized in that, The flow rate of argon is 100 sccm to 300 sccm, and the flow rate of oxygen is 5 sccm to 15 sccm.
9. The preparation method according to claim 1, characterized in that, Step 4 specifically includes: annealing the prepared top electrode sample at 450℃~500℃ for 1min~2min in a N2 atmosphere to form an ohmic contact between the top electrode and the Mn-doped β-Ga2O3 thin film.
10. The preparation method according to claim 1, characterized in that, The top electrode has a Ti / Au layered structure.