Wafer high-temperature annealing equipment

Abstract

The invention relates to the field of semiconductor device processing, in particular to wafer high-temperature annealing equipment. The equipment comprises an annealing furnace, a drawing table for bearing three heat sources is arranged in the annealing furnace in a sliding manner, the drawing table is provided with two rows of bearing tables which are symmetrical up and down, and the upper bearing table is connected with a positioning frame through a lifting mechanism of the positioning frame. The interior of each carrying table is divided into three independent air supply annular air cavities through two partition rings, the opposite sides of the two carrying tables are fixedly connected with three supporting rings with different diameters, heating rings connected with a heat source are arranged on the inner sides of the supporting rings, and air pipes communicated with the annular air cavities are arranged on the inner sides and the outer sides of the heating rings. When the equipment runs, wafers are placed and pushed into the annealing furnace after the space between the carrying tables is adjusted, three cavities of the carrying table below supply air to form an air film to lift the wafers to suspend, a heat source drives a heating ring to perform two-way wrapping heating, and temperature uniformity is guaranteed through adaptation of air pressure and power. Stepped cooling is completed through waste heat slow cooling and airflow auxiliary cooling after annealing, high-precision annealing machining is achieved, and the problems that existing equipment is uneven in temperature, excessive in heat conduction and the like are solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device processing, specifically to a wafer high-temperature annealing equipment. Background Technology

[0002] In semiconductor wafer manufacturing, high-temperature annealing is a crucial process for controlling wafer electrical properties and repairing processing defects. Its core requirement is to ensure uniform temperature across the entire wafer and precisely control the heat conduction process to avoid damage to the formed integrated circuit structure. However, existing equipment generally lacks a differentiated control mechanism for heat loss between the wafer's center and edges. In high-temperature environments, the edges of the wafer have a larger contact area with air, resulting in faster heat dissipation through radiation and convection, while the center region is prone to heat accumulation, forming a significant in-plane temperature gradient. Without a targeted thermal compensation structure, this difference in heat loss leads to inconsistent atomic diffusion rates and stress release levels in different areas of the wafer, causing problems such as wafer warpage and uneven doping concentration. This severely affects the accuracy of subsequent photolithography and etching processes, reducing wafer yield.

[0003] In addition, due to limitations in the fixture structure design, the clamped area of ​​the wafer is prone to uneven heating and cooling, resulting in a shadowing effect. Existing fixtures may obscure parts of the wafer's edge, hindering contact between this area and the heating source and cooling medium. This causes the temperature of the clamped area to be lower than the surrounding area during the heating phase, and the cooling phase is delayed because the heat cannot be dissipated quickly. This localized temperature imbalance can cause stress concentration inside the wafer, which not only damages the wafer's flatness but may also induce microcracks in the clamping area, with a more pronounced impact on ultra-thin, large-size wafers.

[0004] Furthermore, existing annealing equipment is mostly an open platform. This open platform lacks any insulation or heat confinement structure, allowing heat to dissipate rapidly to the surrounding environment during heating. The heat loss rate at the wafer edges is much higher than in the center, creating a temperature gradient where the center is overheated but the edges are underheated. Simultaneously, the wafer is directly exposed to the open environment from the high annealing temperature, resulting in a large temperature difference between the surface and the environment, causing rapid cooling. This sudden change in the rate of thermal expansion and contraction leads to irreversible defects in the crystal lattice, such as stress cracks and dislocations. Therefore, it is necessary to design a high-temperature wafer annealing device. Summary of the Invention

[0005] Therefore, it is necessary to provide a wafer high-temperature annealing device to address the existing technical problems.

[0006] To solve the problems of the prior art, the technical solution adopted by the present invention is as follows:

[0007] A high-temperature annealing apparatus for wafers, comprising:

[0008] The annealing furnace has a sliding pull-out platform that supports three heat sources along its axial direction. The pull-out platform has two rows of symmetrical platforms arranged at equal intervals along its long side. The lower platform is fixed to the pull-out platform, and the upper platform has a positioning frame fixed to the pull-out platform. The positioning frame has a lifting mechanism arranged at equal angles along the circumference. The upper platform is connected to the positioning frame through the lifting mechanism.

[0009] The stage is coaxially fitted with two spacer rings of different diameters, and the stage is divided into three independently supplied annular air chambers by the two spacer rings.

[0010] Three support rings of different diameters are coaxially fixed to one side of the two platforms that are close to each other. Heating rings connected to heat sources are respectively arranged on the radial inner side of the three support rings. Air pipes communicating with the annular air chamber are arranged in an evenly spaced array along the circumferential direction on the radial inner and radial outer sides of the heating rings.

[0011] Furthermore, a pressure plate is coaxially arranged at the upper end of the lower stage, and pins are arranged at equal intervals along the circumferential direction at the upper end of the largest diameter support ring, with the pins slidingly connected to the support ring.

[0012] A main spring is coaxially sleeved on the outside of the pin. The upper end of the main spring is fixed to the support ring, and the lower end is fixed to the support ring.

[0013] Furthermore, the support ring below the tablet is coaxially formed with an annular groove, and after the tablet moves downward, its upper end face is flush with the upper end face of the support ring.

[0014] Furthermore, a limiting arc plate is provided on the side of the lower platform away from the annealing furnace inlet, and the limiting arc plate is fixedly connected to the pull-out platform.

[0015] Furthermore, a flow-stabilizing column is coaxially fixed to the stage, and the flow-stabilizing column is cylindrical.

[0016] Furthermore, the lower platform is symmetrically equipped with grippers on both sides, and a hand-cranked slide is provided on the side where the two grippers are far apart. The machine base of the hand-cranked slide is fixedly connected to the pull-out platform and the output end is fixedly connected to the grippers.

[0017] Furthermore, guide pins are fixedly connected at equal angles along the circumferential direction on the side where the two grippers are close to each other, and the guide pins abut against the outer edge of the wafer.

[0018] Furthermore, a fork-shaped frame is fixed to the middle of the gripper, and the upper end of the fork-shaped frame abuts against the largest diameter support ring at the lower end of the upper platform.

[0019] Furthermore, the lifting mechanism also includes sleeves arranged in an angular array along the circumference of the upper platform. The sleeves are connected to the outermost annular air cavity inside the upper platform, and the lower end of the sleeves is coaxially provided with a plug rod that is fixed to the pull-out platform.

[0020] The sleeve and the insert rod are dynamically sealed together. The insert rod has a venting channel on the same axis. Venting holes are arranged at equal angles along the circumference of the lower part of the venting channel.

[0021] Furthermore, guide pins are fixedly connected at equal angles along the circumferential direction at the upper end of the upper platform. The guide pins are slidably connected to the positioning frame. A secondary spring is sleeved on the outside of the guide pin. The upper end of the secondary spring is fixedly connected to the positioning frame, and the lower end is fixedly connected to the upper platform.

[0022] The beneficial effects of this invention compared to the prior art are:

[0023] Firstly, this equipment uses three annular air chambers on the lower stage for independent air supply and regulation. The airflow in the outer chamber compensates for edge heat loss, while the inner chamber, in conjunction with a flow stabilizing column, balances the heat in the center. Combined with a bidirectional wrapping heating ring structure, it effectively eliminates the temperature gradient within the wafer surface. The non-contact suspension method avoids obstruction of heat transfer. The air pressure of the three annular air chambers is matched with the power of the heat source, achieving uniform temperature control across the entire range. This prevents wafer warping and uneven doping concentration caused by inconsistent atomic diffusion rates, thereby improving wafer yield.

[0024] Secondly, this equipment adopts a non-contact air film suspension bearing method to replace the traditional mechanical clamping, eliminating the shadow effect at the source. At the same time, the pressing sheet acts as an elastic buffer structure to achieve non-rigid bearing of the wafer. The annular groove ensures that the wafer fits the support ring. The grippers and guide pins only serve as positioning and limiting functions and do not affect heat transfer. During the cooling stage, the airflow pressure ensures stable wafer fit, avoids local cooling lag, and prevents stress concentration from causing microcracks. It is suitable for ultra-thin and large-size wafer processing.

[0025] Thirdly, this equipment effectively solves the cooling defects of open platforms through a two-way stepped cooling design. The high-temperature section utilizes the residual heat of the heating ring on the download stage to form a thermal buffer layer, which, together with the jet jet on the loading stage, cuts off the residual heat radiation, avoiding rapid cooling of the wafer at high temperatures and preventing the generation of lattice cracks and dislocations. The medium and low temperature sections rely on the heat conduction of the wafer and the support ring through contact and the uniform airflow of the loading stage to achieve efficient cooling. The two-stage cooling is free from airflow disturbance, precisely controls the cooling rhythm, eliminates in-plane temperature gradients, avoids wafer warpage damage, and significantly improves annealing quality and yield. Attached Figure Description

[0026] Figure 1 This is a three-quarter sectional view of the embodiment;

[0027] Figure 2 This is a three-dimensional structural diagram of the pull-out platform and the carrier platform in the embodiment;

[0028] Figure 3 This is a three-dimensional structural diagram of the two platforms in the embodiment;

[0029] Figure 4 This is an exploded three-dimensional structural diagram of the platform in the embodiment;

[0030] Figure 5 yes Figure 4 Enlarged view of the structure at point A in the middle;

[0031] Figure 6 This is a top view of the platform in the embodiment;

[0032] Figure 7 yes Figure 6 Half-section view of the structural plan at point BB;

[0033] Figure 8 yes Figure 7 Enlarged view of the structure at point D;

[0034] Figure 9 yes Figure 6 Three-dimensional half-section view of the structure at the CC position;

[0035] Figure 10 yes Figure 9 Enlarged view of the structure at point E in the middle.

[0036] The numbers on the map are:

[0037] 1. Annealing furnace; 2. Pull-out table; 3. Platform; 4. Spacer ring; 5. Annular gas chamber; 6. Gas pipe; 7. Support ring; 8. Pressure plate; 9. Main spring; 10. Pin; 11. Annular groove; 12. Limiting arc plate; 13. Flow stabilizing column; 14. Hand-cranked slide table; 15. Gripper; 16. Guide bolt; 17. Fork-shaped frame; 18. Heating ring; 19. Lifting mechanism; 20. Sleeve; 21. Insert rod; 22. Vent hole; 23. Vent air passage; 24. Positioning frame; 25. Secondary spring; 26. Guide pin. Detailed Implementation

[0038] To further understand the features, technical means, and specific objectives and functions achieved by the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

[0039] refer to Figures 1 to 10 A high-temperature annealing apparatus for wafers, comprising:

[0040] Annealing furnace 1, annealing furnace 1 is provided with a pull-out table 2 that supports three heat sources and slides along the axial direction. The pull-out table 2 is provided with two rows of symmetrical platforms 3 arranged at equal intervals along the long side. The lower platform 3 is fixedly connected to the pull-out table 2. The upper end of the upper platform 3 is provided with a positioning frame 24 that is fixedly connected to the pull-out table 2. The positioning frame 24 is provided with a lifting mechanism 19 arranged at equal angles along the circumferential direction. The upper platform 3 is connected to the positioning frame 24 through the lifting mechanism 19.

[0041] The platform 3 is coaxially fitted with two partition rings 4 of different diameters, and the platform 3 is divided into three independently supplied annular air chambers 5 by the two partition rings 4.

[0042] Three support rings 7 of different diameters are coaxially fixed to one side of the two platforms 3 that are close to each other. Heating rings 18 connected to heat sources are respectively arranged on the radial inner side of the three support rings 7. Air pipes 6 connected to the annular air chamber 5 are arranged in an evenly spaced array along the circumferential direction on the radial inner and radial outer sides of the heating rings 18.

[0043] During operation, the operator pulls the pull-out stage 2 along the axis of the annealing furnace 1, then places the wafer above the support ring 7 of the lower stage 3, pushes the pull-out stage 2 into the annealing furnace 1, and starts the gas supply system. During the heating phase, the gas supply system only supplies gas to the three annular gas chambers 5 separated by the partition ring 4 within the lower stage 3. The three annular gas chambers 5, from the center of the stage 3 outwards, are the inner ring chamber, the middle ring chamber, and the outer ring chamber. The gas pressure of the three annular gas chambers 5 is independently regulated: the gas supply to the inner ring chamber balances the central airflow and avoids the generation of eddies; the gas supply to the middle ring chamber provides core lifting force; and the gas supply to the outer ring chamber compensates for edge airflow loss. Inert gas is ejected through the gas pipes 6 radially inward and outward of the heating ring 18 of the lower stage 3, forming a uniform and stable gas film, lifting the wafer to achieve non-contact levitation.

[0044] During heating, the operator simultaneously activates the three heat sources carried by the pull-out platform 2. The three heat sources supply power to the three heating rings 18 of the corresponding upper and lower platforms 3. The heating rings 18 perform bidirectional wrapping heating on the suspended wafer. Through precise control of the three-chamber air pressure and matching with the heat source power, the temperature uniformity of the entire wafer surface is ensured.

[0045] After annealing, the gas supply to the three heat sources and the inner, middle, and outer cavities of the lower stage 3 is shut off. The wafer falls smoothly onto the support ring 7 of the lower stage 3 under the influence of gravity. At this time, the residual heat of the heating ring 18 forms natural insulation, providing slow cooling conditions for the high-temperature section of the wafer, realizing the first stage of stepped cooling.

[0046] The operator then activates the gas supply system of the upper stage 3. At this time, the gas supply system only supplies gas to the inner, middle, and outer ring cavities inside the upper stage 3. The three cavities are supplied with gas independently, and the gas is expelled downwards through the gas pipes 6 on the radially inner and outer sides of the heating ring 18 of the upper stage 3. The airflow forms a stable downward pressure to ensure that the wafer adheres to the support ring 7 without shifting, while also helping to remove heat from the wafer surface. Together with the residual heat of the heating ring 18, it completes the medium and low temperature cooling process, realizing a complete stepped cooling process. After cooling is completed, the operator pulls out the pull-out stage 2 along the axis of the annealing furnace 1 and removes the annealed wafer.

[0047] To provide non-rigid support for the wafer, the following features are specifically designed:

[0048] like Figure 10As shown, a pressure plate 8 is coaxially arranged at the upper end of the lower platform 3, and pins 10 are arranged at equal intervals along the circumferential direction at the upper end of the largest diameter support ring 7. The pins 10 are slidably connected to the support ring 7.

[0049] A main spring 9 is coaxially sleeved on the outside of the pin 10. The upper end of the main spring 9 is fixedly connected to the ring 7, and the lower end is fixedly connected to the ring 7.

[0050] During the wafer's descent onto the support ring 7, the pressure plate 8 provides flexible restraint to the upper surface of the wafer, preventing damage from the impact force. The pin 10 can slide up and down along the support ring 7, forming an elastic buffer structure with the main spring 9. When the wafer contacts the support ring 7, the main spring 9 absorbs the impact force through its own elastic deformation, achieving non-rigid load-bearing for the wafer and preventing micro-cracks from forming on the wafer due to rigid contact, while maintaining the stability of the wafer during the cooling stage.

[0051] To facilitate the movement of the support ring 7 downwards until its upper end is flush with the upper end of the support ring 7 after the wafer falls onto the upper end, the following features are specifically provided:

[0052] like Figure 10 As shown, the support ring 7 below the pressing tablet 8 is coaxially formed with an annular groove 11. After the pressing tablet 8 moves downward, its upper end face is flush with the upper end face of the support ring 7.

[0053] After the wafer falls onto the support ring 7, the wafer clamp 8 moves downward under the weight of the wafer and its own assembly force. The annular groove 11 provides sufficient space for the wafer clamp 8 to move, ensuring that the upper surface of the wafer clamp 8 is precisely flush with the upper surface of the support ring 7 after it moves down. This allows the lower surface of the wafer to completely fit against the support ring 7, avoiding uneven stress on the wafer due to the protrusion of the wafer clamp 8. At the same time, it ensures that the airflow during the cooling stage can act evenly on the wafer surface, maintain temperature stability, and prevent stress concentration caused by excessively rapid local cooling.

[0054] To limit the movement of the wafer during the installation process, the following features are specifically designed:

[0055] like Figure 1 and Figure 3 As shown, a limiting arc plate 12 is provided on the side of the lower platform 3 away from the inlet of the annealing furnace 1, and the limiting arc plate 12 is fixedly connected to the pull-out platform 2.

[0056] During the placement of the wafer on the lower stage 3 and support ring 7, the limiting arc plate 12 can laterally limit the edge of the wafer, guiding the operator to quickly place the wafer in the preset position and preventing uneven thermal field stress between the center and edge during subsequent suspension heating due to wafer misalignment. At the same time, the limiting arc plate 12 adopts an arc-shaped structure that fits the outer edge of the wafer, which will not damage the wafer edge and can also prevent the wafer from shifting due to inertia when the pull-out stage 2 pushes it into the annealing furnace 1, thus ensuring processing accuracy.

[0057] To create a uniform pressure field at the center of the bottom edge of the wafer, the following features are specifically designed:

[0058] like Figure 7 As shown, a flow stabilizing column 13 is coaxially fixed to the stage 3, and the flow stabilizing column 13 is cylindrical.

[0059] After the gas supply system of stage 3 is started, the flow stabilizing column 13 can guide and stabilize the airflow at the center, preventing the gas ejected from the inner cavity from forming vortices and ensuring stable and uniform gas pressure in the center region. The cylindrical structure ensures that the airflow diffuses uniformly along the circumference of the flow stabilizing column 13, cooperating with the airflow in the inner, middle, and outer cavities to form a balanced gas pressure field across the entire region, further improving the stability of wafer levitation, while ensuring consistent heat transfer between the center and edge regions and eliminating temperature gradients.

[0060] To achieve wafer alignment and calibration, the following features were specifically designed:

[0061] like Figure 3 and Figure 5 As shown, grippers 15 are symmetrically arranged on both sides of the lower platform 3. A hand-cranked slide 14 is arranged on the side of the two grippers 15 that are far apart. The machine base of the hand-cranked slide 14 is fixedly connected to the pull-out platform 2 and the output end is fixedly connected to the grippers 15.

[0062] After the wafer is placed, the operator can adjust the position of the grippers 15 by rotating the hand-cranked slide 14. The symmetrically arranged grippers 15 on both sides move synchronously from the edge of the wafer towards the center, achieving precise centering and calibration of the wafer. The hand-cranked slide 14 features high adjustment accuracy and convenient operation, ensuring that the center of the wafer coincides with the axis of the stage 3, providing a foundation for subsequent uniform heating and levitation support.

[0063] To limit the position of the wafer during the levitation process, the following features are specifically designed:

[0064] like Figure 5 As shown, guide pins 16 are fixedly connected to the two jaws 15 on the side of the two jaws that are close to each other along the circumferential direction at equal angles. The guide pins 16 abut against the outer edge of the wafer.

[0065] During wafer levitation heating, the guide pins 16 can flexibly limit the wafer from the circumferential direction, preventing the wafer from radially shifting due to airflow fluctuations. The guide pins 16 are distributed at equal angles along the circumference, which can evenly distribute the limiting force, avoid excessive local force that could damage the wafer, and at the same time, do not affect the airflow and heat transfer on the upper and lower surfaces of the wafer, ensuring heating uniformity.

[0066] In order to load and limit the upper platform 3, the following features are specifically set:

[0067] like Figure 5As shown, a fork-shaped frame 17 is fixedly connected to the middle of the gripper 15, and the upper end of the fork-shaped frame 17 abuts against the support ring 7 with the largest diameter at the lower end of the upper platform 3.

[0068] During equipment operation, the fork-shaped bracket 17 can assist in the dragging of the upper platform 3, sharing the load-bearing pressure of the lifting mechanism 19 and improving the structural stability of the upper platform 3. At the same time, the fork-shaped bracket 17 abuts against the upper platform 3 support ring 7, which can radially limit the upper platform 3, preventing it from shifting due to airflow or vibration, ensuring that the axes of the upper and lower platforms 3 always coincide, guaranteeing the enveloping heating effect of the bidirectional heating ring 18 on the wafer, and maintaining temperature uniformity.

[0069] To further refine the specific structure of the lifting mechanism 19 and ensure that during the cooling phase, while the upper stage 3 is spraying gas onto the wafer, it can move upward under the reaction force of the gas, the following features are also provided:

[0070] like Figure 1 and Figure 8 As shown, the lifting mechanism 19 also includes a sleeve 20 arranged in an angular array along the circumference of the upper platform 3. The sleeve 20 is connected to the annular air cavity 5 of the outermost ring inside the upper platform 3. The lower end of the sleeve 20 is coaxially provided with a plug rod 21 that is fixed to the pull-out platform 2.

[0071] The sleeve 20 is dynamically sealed to the insert rod 21. The insert rod 21 is coaxially provided with a venting channel 23. The lower part of the venting channel 23 is provided with venting holes 22 arranged at equal angles along the circumferential direction.

[0072] When the air supply system of the upper platform 3 is activated during the cooling phase, a portion of the gas in the outermost annular air chamber 5 of the upper platform 3 is introduced into the sleeve 20. The gas acts on the upper end of the insertion rod 21, generating an upward reaction force that pushes the sleeve 20 and moves the upper platform 3 upward. The dynamic sealing structure prevents gas leakage and ensures stable reaction force; the venting channel 23 and venting hole 22 can discharge excess gas from the sleeve 20, preventing damage to the equipment due to excessive gas pressure, while also enabling smooth control of the moving speed of the upper platform 3, ensuring a stable and orderly cooling process.

[0073] It is important to note that the cooling stage is divided into a slow cooling phase at high temperatures and an accelerated cooling phase at medium and low temperatures. During the high-temperature phase, after the lower stage 3 stops supplying gas, the wafer loses the supporting force of the suspending gas film and falls smoothly under gravity, adhering to the upper end of the support ring 7 of the lower stage 3. At this time, the heating ring 18 of the lower stage 3 still retains residual heat, forming a gentle thermal buffer layer for the wafer, preventing rapid cooling and avoiding defects such as cracks and dislocations caused by sudden changes in the rate of thermal expansion and contraction of the lattice. Simultaneously, the upper stage 3 continues to supply gas, and the resulting reaction force propels itself away from the wafer, completely cutting off the residual heat radiation path of the heating ring 18 at the upper stage 3. This prevents the accumulation of residual heat from the upper stage 3 from causing uncontrolled wafer cooling rate and ensures the stability of the slow cooling in the high-temperature phase.

[0074] During accelerated cooling in the medium-low temperature range, the upper stage 3 continuously ejects gas, which, in addition to propelling itself away, creates a uniform downward convection airflow field above the wafer. Since the lower stage 3 does not eject gas, the contact between the wafer and the support ring 7 of the lower stage 3 remains undisturbed by the airflow. Heat can then be efficiently dissipated through two paths: first, through heat conduction between the wafer and the support ring 7, transferring heat to the lower stage 3; and second, through the airflow generated by the upper stage 3, carrying away heat from the wafer's upper surface. This two-stage cooling rate switching is uninterrupted by airflow, precisely matching the cooling rhythm requirements of the annealing process.

[0075] To enable the upper stage 3 to approach the wafer during the wafer heating stage, the following features are specifically designed:

[0076] like Figure 6 As shown, guide pins 26 are fixedly connected at equal angles along the circumferential direction at the upper end of the upper platform 3. The guide pins 26 are slidably connected to the positioning frame 24. A secondary spring 25 is sleeved on the outside of the guide pins 26. The upper end of the secondary spring 25 is fixedly connected to the positioning frame 24, and the lower end is fixedly connected to the upper platform 3.

[0077] During the wafer heating stage, the secondary spring 25 exerts a downward force through its own elastic potential energy, pulling the upper stage 3 closer to the wafer along the guide pin 26. This allows the heating rings 18 of both the upper and lower stages 3 to provide bidirectional, enveloping heating to the wafer, reducing heat loss. The guide pin 26 ensures precise movement of the upper stage 3, preventing deviation, while the secondary spring 25 provides a buffering effect, preventing rigid collisions between the upper stage 3 and the wafer, thus ensuring a safe and stable heating process.

[0078] The detailed working principle of this equipment is as follows: This equipment uses non-contact suspension heating, zoned air pressure regulation, and bidirectional stepped cooling as its core to achieve precise control of high-temperature annealing of wafers. Before starting the equipment, the operator first pulls out the pull-out stage 2, places the wafer on the support ring 7 of the lower stage 3, and the limiting arc plate 12 guides the wafer to initial positioning. Then, the clamping jaws 15 are used for centering and calibration to ensure that the center of the wafer coincides with the axis of the stage 3. The pressure plate 8, together with the pin 10 and the main spring 9, forms a non-rigid load-bearing preparatory state.

[0079] The operator then pushes the pull-out stage 2 into the preset position inside the annealing furnace 1. The auxiliary spring 25 pushes the upper stage 3 closer to the wafer, causing the heating rings 18 of the upper and lower stages 3 to form a bidirectional enveloping structure. The gas supply system of the lower stage 3 is activated, with independent adjustment of the gas pressure in the inner, middle, and outer chambers. The flow stabilizing column 13 stabilizes the airflow at the center, and the gas is ejected through the gas pipes 6 on the inner and outer sides of the heating ring 18 to form a uniform gas film, lifting the wafer to achieve non-contact suspension and avoiding temperature unevenness caused by clamping. Then, the three heat sources are activated simultaneously to supply power to the corresponding heating rings 18. The heating rings 18 generate heat and transfer it to the wafer. The gas pressure in the three chambers is precisely matched with the power of the heat sources. The airflow in the outer chamber compensates for edge heat loss, and the airflow in the inner chamber balances the heat in the center. The bidirectional heating structure eliminates the in-plane temperature gradient.

[0080] During the annealing stage, the heat source maintains a stable output power, the heating ring 18 maintains the preset temperature, the guide bolt 16 limits the suspended wafer to prevent displacement caused by airflow fluctuations, and the fork-shaped bracket 17 ensures the stability of the upper stage 3 and ensures uniform heating. After annealing, the heat source and the gas supply to the lower stage 3 are turned off, and the wafer falls smoothly under the action of gravity. The pressure plate 8 moves down along the annular groove 11 until it is flush with the support ring 7, and the main spring 9 buffers the impact force.

[0081] The gas supply system of the upper stage 3 is then activated. Gas is introduced into the sleeve 20, generating a reaction force that pushes the upper stage 3 upward. Simultaneously, gas from the three chambers is expelled downward through the gas pipe 6, creating a stable pressure that allows the wafer to adhere to the support ring 7, assisting in heat removal and cooling. Excess gas in the sleeve 20 is discharged through the venting channel 23 and the venting hole 22, ensuring smooth movement. After cooling is complete, the pull-out stage 2 is pulled out, the clamps 15 are adjusted to release the wafer, and the finished product is removed, completing the entire annealing process.

[0082] The above embodiments only illustrate one or more implementations of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this patent should be determined by the appended claims.

Claims

1. A wafer high-temperature annealing apparatus, characterized in that, include: Annealing furnace (1), annealing furnace (1) is provided with a pull-out platform (2) that carries three heat sources along the axial direction. The pull-out platform (2) is provided with two rows of symmetrical platforms (3) arranged at equal intervals along the long side. The lower platform (3) is fixedly connected to the pull-out platform (2). The upper platform (3) is provided with a positioning frame (24) that is fixedly connected to the pull-out platform (2). The positioning frame (24) is provided with a lifting mechanism (19) arranged at equal angles along the circumferential direction. The upper platform (3) is connected to the positioning frame (24) through the lifting mechanism (19). The platform (3) is coaxially fitted with two partition rings (4) of different diameters. The platform (3) is divided into three independently supplied annular air chambers (5) by the two partition rings (4). Three support rings (7) of different diameters are fixedly connected coaxially on the side of the two platforms (3) respectively. Heating rings (18) connected to heat sources are respectively provided on the radial inner side of the three support rings (7). Air pipes (6) connected to the annular air chamber (5) are arranged in an equal array along the circumferential direction on the radial inner and radial outer sides of the heating rings (18).

2. The wafer high-temperature annealing equipment according to claim 1, characterized in that, A pressure plate (8) is coaxially arranged at the upper end of the lower platform (3), and pins (10) are arranged at equal intervals along the circumferential direction at the upper end of the largest diameter support ring (7). The pins (10) are slidably connected to the support ring (7). The main spring (9) is coaxially sleeved on the outside of the pin (10). The upper end of the main spring (9) is fixedly connected to the ring (7), and the lower end is fixedly connected to the ring (7).

3. The wafer high-temperature annealing equipment according to claim 2, characterized in that, The support ring (7) below the tablet (8) is coaxially formed with an annular groove (11). After the tablet (8) moves downward, its upper end face is flush with the upper end face of the support ring (7).

4. The wafer high-temperature annealing equipment according to claim 3, characterized in that, A limiting arc plate (12) is provided on the side of the lower platform (3) away from the entrance of the annealing furnace (1), and the limiting arc plate (12) is fixedly connected to the pull-out platform (2).

5. The wafer high-temperature annealing equipment according to claim 4, characterized in that, The platform (3) is coaxially fixed with a flow stabilizing column (13), which is cylindrical.

6. The wafer high-temperature annealing equipment according to claim 1, characterized in that, The lower platform (3) is symmetrically equipped with grippers (15) on both sides. A hand-cranked slide (14) is provided on the side of the two grippers (15) that are far apart. The machine base of the hand-cranked slide (14) is fixedly connected to the pull-out platform (2) and the output end is fixedly connected to the grippers (15).

7. The wafer high-temperature annealing equipment according to claim 6, characterized in that, Guide pins (16) are fixedly attached to the two jaws (15) at equal angles along the circumference on the side where they are close to each other, and the guide pins (16) abut against the outer edge of the wafer.

8. The wafer high-temperature annealing equipment according to claim 7, characterized in that, The fork-shaped frame (17) is fixed to the middle of the gripper (15), and the upper end of the fork-shaped frame (17) abuts against the support ring (7) with the largest diameter at the lower end of the upper platform (3).

9. The wafer high-temperature annealing equipment according to claim 1, characterized in that, The lifting mechanism (19) also includes a sleeve (20) arranged in an equiangular array along the circumference of the upper platform (3). The sleeve (20) is connected to the outermost annular air cavity (5) inside the upper platform (3). The lower end of the sleeve (20) is coaxially provided with a plug rod (21) fixed to the pull-out table (2). The sleeve (20) is dynamically sealed to the insert rod (21). The insert rod (21) is coaxially provided with a venting channel (23). The lower part of the venting channel (23) is provided with venting holes (22) arranged at equal angles along the circumferential direction.

10. A wafer high-temperature annealing apparatus according to claim 9, characterized in that, The upper end of the upper platform (3) is fixedly connected with guide pins (26) at equal angles along the circumferential direction. The guide pins (26) are slidably connected to the positioning frame (24). A secondary spring (25) is sleeved on the outside of the guide pins (26). The upper end of the secondary spring (25) is fixedly connected to the positioning frame (24), and the lower end is fixedly connected to the upper platform (3).

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