Display panel and display module

By integrating OPD subpixels on an OLED display panel and using photolithography for patterning, combined with isolation structures and electrode optimization, the problems of reduced aperture ratio and unstable performance when integrating OPD subpixels in OLED display panels have been solved, achieving high brightness and high definition biometric recognition functions.

CN121865816APending Publication Date: 2026-04-14HEFEI VISIONOX TECH CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-10-12
Publication Date
2026-04-14

AI Technical Summary

Technical Problem

When integrating OPD subpixels, the reduced aperture ratio of existing OLED display panels leads to a shorter display panel lifespan and makes it difficult to achieve high definition and high brightness. At the same time, the performance and reliability of OPD subpixels are unstable.

Method used

By integrating OPD subpixels on OLED display panels and using photolithography for patterning, combined with isolation structures and different electrode configurations, the mutual interference between the light-emitting structure and the photoelectric sensing structure is improved, and the electrode thickness and material selection are optimized to maintain OLED display performance and improve the reliability of OPD subpixels.

Benefits of technology

This technology increases the aperture ratio of OPD sub-pixels without compromising the performance of the OLED display panel, thereby improving the high definition of the display panel and the reliability of biometric functions, simplifying the manufacturing process, and enhancing the integration effect.

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Abstract

The embodiment of the invention provides a display panel and a display module, and aims to improve the performance of a photoelectric detector in the display panel. The embodiment of the first aspect of the invention provides a display panel. The display panel comprises a substrate; the light-emitting sub-pixel is arranged on one side of the substrate, and the light-emitting sub-pixel comprises a light-emitting structure; the light sensing sub-pixel is arranged on one side of the substrate, the light sensing sub-pixel comprises a photoelectric sensing structure, and the material of the photoelectric sensing structure comprises a donor material and an acceptor material; the electron blocking layer is arranged on the sides, facing the substrate, of the light-emitting structure and the photoelectric sensing structure, and the HOMO energy level of the donor material is lower than or equal to the HOMO energy level of the electron blocking layer.
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Description

Technical Field

[0001] This application relates to the field of display device technology, and more particularly to a display panel and a display module. Background Technology

[0002] Biometrics plays a crucial role in smartphones and tablets. Common existing technologies include facial recognition and fingerprint recognition. Fingerprint recognition further includes ultrasonic fingerprinting, capacitive fingerprinting, and optical fingerprinting. Optical fingerprinting, in particular, offers advantages such as high resolution and high sensitivity, enabling vital sign detection. Summary of the Invention

[0003] This application provides a display panel and a display module, which are intended to enrich the functionality of the display panel.

[0004] An embodiment of the first aspect of this application provides a display panel, the display panel comprising: a substrate; an isolation structure disposed on one side of the isolation structure, the isolation structure enclosing an isolation opening, the isolation opening including a first isolation opening and a second isolation opening; a light-emitting sub-pixel including a light-emitting structure located in the first isolation opening; and a photosensitive sub-pixel including a photoelectric sensing structure located in the second isolation opening.

[0005] An embodiment of the first aspect of this application provides a display panel, the display panel comprising: a substrate; a light-emitting sub-pixel disposed on one side of the substrate, the light-emitting sub-pixel including a light-emitting structure; a photosensitive sub-pixel disposed on one side of the substrate, the photosensitive sub-pixel including a photoelectric sensing structure, the material of the photoelectric sensing structure including a donor material and an acceptor material; an electron blocking layer disposed on the side of the light-emitting structure and the photoelectric sensing structure facing the substrate, wherein the LUMO energy level of the donor material is lower than or equal to the LUMO energy level of the electron blocking layer.

[0006] An embodiment of the first aspect of this application provides a display panel, the display panel comprising: a substrate; a light-emitting functional layer disposed on one side of the substrate, the light-emitting functional layer comprising a light-emitting structure and a photoelectric sensing structure, the material of the photoelectric sensing structure comprising a donor material and an acceptor material; a hole-blocking layer disposed on the side of the light-emitting functional layer facing the substrate, wherein the HOMO energy level of the hole-blocking layer is lower than or equal to the energy level of the acceptor material, and / or the LUMO energy level of the hole-blocking layer is lower than or equal to the energy level of the acceptor material.

[0007] The second aspect of this application also provides a display module, including the display panel provided in any of the first aspect embodiments described above.

[0008] An embodiment of the second aspect of this application also provides a display module, including: a substrate; a pixel unit disposed on the substrate and including a light-emitting sub-pixel and a photosensitive sub-pixel; a filter portion disposed on the side of the pixel unit away from the substrate, the filter portion including a first filter portion and a second filter portion, the orthographic projection of the first filter portion on the substrate and the orthographic projection of the light-emitting sub-pixel on the substrate at least partially overlap, the orthographic projection of the second filter portion on the substrate and the orthographic projection of the photosensitive sub-pixel on the substrate at least partially overlap, wherein the second filter portion includes a first sub-unit and a second sub-unit, the light transmission bands of the first sub-unit and the second sub-unit are at least partially different.

[0009] In the display panel provided in this application embodiment, the display panel includes a substrate, an isolation structure, light-emitting sub-pixels, and photosensitive sub-pixels. The isolation structure encloses a first isolation opening and a second isolation opening. The light-emitting structure of the light-emitting sub-pixel is located in the first isolation opening, and the photoelectric sensing structure of the photosensitive sub-pixel is located in the second isolation opening, which can improve the mutual interference problem between the light-emitting structure and the photoelectric sensing structure. The display panel in this application embodiment includes both light-emitting sub-pixels and photosensitive sub-pixels, which can not only achieve the purpose of light-emitting display but also the purpose of light sensing, thus enriching the functionality of the display panel. Attached Figure Description

[0010] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, wherein the same or similar reference numerals denote the same or similar features.

[0011] Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0012] Figure 2 yes Figure 1 The diagram includes a magnified view of a local structure of a pixel unit;

[0013] Figure 3 yes Figure 2 A partial sectional view;

[0014] Figure 4 yes Figure 3 A magnified schematic diagram of a localized area at a specific location;

[0015] Figure 5 yes Figure 3 A magnified schematic diagram of the structure at another location;

[0016] Figure 6 yes Figure 3 A magnified schematic diagram of a portion of the structure at another location;

[0017] Figure 7 This is a cross-sectional view of a display panel provided in an embodiment of this application;

[0018] Figure 8 This is another cross-sectional view of a display panel provided in an embodiment of this application;

[0019] Figure 9 This is a schematic diagram of the circuit structure of the first driving unit of a display panel provided in an embodiment of this application;

[0020] Figure 10 This is a schematic diagram of the circuit structure of the second driving unit of a display panel provided in an embodiment of this application;

[0021] Figure 11 This is a spectral diagram of a light-emitting sub-pixel of a display panel provided in an embodiment of this application;

[0022] Figures 12 to 14 This is a photosensitive spectrum of a photosensitive sub-pixel of a display panel according to a different embodiment of this application;

[0023] Figure 15 This is a schematic diagram of the structure of a pixel unit of a display panel according to another embodiment of this application;

[0024] Figure 16 This is a spectral diagram of a light-emitting sub-pixel of a display panel provided in another embodiment of this application;

[0025] Figures 17 to 19 This is a photosensitive spectrum of a photosensitive sub-pixel of a display panel according to a different embodiment of this application;

[0026] Figure 20 yes Figure 2 A partial cross-sectional view in another embodiment;

[0027] Figure 21 This is a schematic diagram of the structure of the second light-shielding layer in one example;

[0028] Figure 22 This is a schematic diagram of the structure of the second light-shielding layer in another example;

[0029] Figure 23 This is a schematic diagram of the structure of the filter section in one example;

[0030] Figure 24 This is a schematic diagram of the filter section in another example;

[0031] Figure 25 This is a schematic diagram of the structure of a light adjustment layer in an example;

[0032] Figure 26 This is a schematic diagram of the light adjustment layer in another example;

[0033] Figure 27 This is a schematic diagram of the film structure of a display panel in one example;

[0034] Figure 28 This is a schematic diagram of the energy level structure of a light-emitting sub-pixel in one example;

[0035] Figure 29 This is a schematic diagram of the energy level structure of a photosensitive sub-pixel in one example;

[0036] Figure 30 This is a schematic diagram illustrating the usage state structure of a module in one example.

[0037] Figure 31 This is another example showing the structural diagram of the module's usage state;

[0038] Figure 32 and Figure 33 These are schematic diagrams showing the detection results of the modules in different examples.

[0039] Explanation of reference numerals in the attached figures:

[0040] 10. Display module;

[0041] 100, substrate; 101, drive module; 110, first drive unit; 111, switching transistor; 112, drive transistor; 113, capacitor; 120, second drive unit; 121, first transistor; 122, second transistor; 123, third transistor;

[0042] 200. Isolation structure; 210. Isolation opening; 211. First isolation opening; 212. Second isolation opening; 220. First isolation section; 230. Second isolation section; 201. First sublayer; 202. Second sublayer; 203. Third sublayer;

[0043] 300, Light-emitting functional layer; 30a, Pixel unit; 301, Light-emitting sub-pixel; R, Red sub-pixel; G, Green sub-pixel; B, Blue sub-pixel; 302, Photosensitive sub-pixel; 3021, First photosensitive unit; 3022, Second photosensitive unit; IR, Sensor-emitting sub-pixel; 310, Light-emitting structure; 320, Photosensitive structure; 321, Donor material; 322, Acceptor material; 330, Electron blocking layer; 331, First section; 332, Second section; 340, Hole transport layer; 350, Hole blocking layer; 351, Third section; 352, Fourth section; 360, Electron transport layer; 370, Electron extraction layer; 380, Hole extraction layer;

[0044] 30. Second virtual paragraph;

[0045] 400, Pixel definition layer; 410, Pixel limiting section; 420, First opening; 430, Second opening;

[0046] 510, First electrode; 520, Second electrode; 521, Virtual electrode; 530, Light adjustment layer; 531, First adjustment protrusion; 532, Second adjustment protrusion; 540, Light protective layer;

[0047] 610, Light extraction unit; 611, First light extraction unit; 612, Second light extraction unit; 613, First virtual segment; 620, Filter unit; 621, First filter unit; 622, Second filter unit; 622a, First subunit; 622b, Second subunit; 630, First light-shielding layer;

[0048] 710, First encapsulation layer; 711, Encapsulation portion; 711a, First encapsulation segment; 711b, Second encapsulation segment; 720, Second encapsulation layer; 730, Third encapsulation layer;

[0049] 800, Second light-shielding layer; 810, First light-shielding opening; 820, Second light-shielding opening. Detailed Implementation

[0050] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without requiring some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples. In the accompanying drawings and the following description, at least some well-known structures and techniques are not shown to avoid unnecessarily obscuring the application; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0051] In the description of this application, it should be noted that, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," etc., indicating orientation or positional relationships are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0052] The directional terms appearing in the following description refer to the directions shown in the figures and are not intended to limit the specific structure of the embodiments of this application. It should also be noted in the description of this application that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0053] Biometric identification plays a crucial role in mobile devices such as smartphones and tablets. Common existing technologies include facial recognition and fingerprint recognition. Fingerprint recognition further includes ultrasonic fingerprinting, capacitive fingerprinting, and optical fingerprinting. Optical fingerprinting has become the mainstream technology due to its advantages such as high resolution, high sensitivity, and ability to perform vital health detection.

[0054] Integrating organic light-emitting diodes (OLEDs) and photoelectric sensors together in a panel allows for a larger integration area and a thinner overall device thickness. Organic photodetectors (OPDs) based on organic photosensitive materials are compatible with the vacuum evaporation process of organic light-emitting diodes (OLEDs), representing an important direction for integrating fingerprint recognition functionality into panels in the future.

[0055] By integrating OPD photoelectric sensors onto OLED display panels, fingerprint images and pulse wave data can be acquired, enabling multifunctional display devices with biometric and health sensor capabilities. To integrate photoelectric sensors onto organic light-emitting display panels, OPD subpixels, fabricated based on organic photosensitive materials, are compatible with the vacuum evaporation process of OLED subpixels, representing a crucial direction for future fingerprint recognition integration. However, adding OPD subpixels necessitates reducing the aperture ratio of OLED subpixels, leading to a decrease in the lifespan of the OLED display panel. Furthermore, from the perspective of OLED display panel performance, achieving high resolution and high brightness becomes challenging. Additionally, considering mass production, even OPD subpixels require the same materials and thicknesses as OLED subpixels in layers fabricated using common metal masks (CMMs), such as the hole transport layer 340 (HTL), electron transport layer 360 (ETL), and hole blocking layer 350 (HBL). Consequently, the energy level relationship between the HOMO levels of the OPD layer and HBL becomes unstable, potentially resulting in lower performance and reliability of the integrated OPD sensor compared to a standalone OPD.

[0056] In the OLED display panel industry, to address the limitations of precision evaporation processes on aperture ratio and resolution, a method using photolithography to pattern OLED subpixels has been proposed, and prototypes have been manufactured. Since precision evaporation is not used, the aperture ratio can be increased, and high resolution is expected to be achieved. However, there are currently no cases of integrating OPD subpixels.

[0057] In this embodiment, by using photolithography to integrate OPD subpixels on an OLED display panel, an OLED display panel is provided that maintains the performance and reliability of the OLED display panel even with the addition of OPD subpixels. Furthermore, the performance and reliability of the OPD subpixels integrated on the OLED display panel can also be improved.

[0058] To better understand this application, the following will be combined with... Figures 1 to 33 The display panel and display module 10 of the embodiments of this application will be described in detail.

[0059] Please refer to the following: Figures 1 to 3 An embodiment of the first aspect of this application also provides a display panel, including: a substrate 100; an isolation structure 200 disposed on one side of the isolation structure 200, the isolation structure 200 enclosing an isolation opening 210, the isolation opening 210 including a first isolation opening 211 and a second isolation opening 212; a light-emitting sub-pixel 301 including a light-emitting structure 310 located in the first isolation opening 211; and a photosensitive sub-pixel 302 including a photoelectric sensing structure 320 located in the second isolation opening 212.

[0060] In this embodiment, the display panel includes a substrate 100, an isolation structure 200, light-emitting sub-pixels 301, and photosensitive sub-pixels 302. The isolation structure 200 encloses a first isolation opening 211 and a second isolation opening 212. The light-emitting structure 310 of the light-emitting sub-pixel 301 is located in the first isolation opening 211, and the photoelectric sensing structure 320 of the photosensitive sub-pixel 302 is located in the second isolation opening 212, which can improve the mutual interference problem between the light-emitting structure 310 and the photoelectric sensing structure 320. The display panel of this embodiment includes both light-emitting sub-pixels 301 and photosensitive sub-pixels 302, which can not only achieve the purpose of light emission display but also the purpose of light sensing, thus enriching the functionality of the display panel.

[0061] Optionally, the display panel includes a display area and a non-display area, with light-emitting sub-pixels 301 and photosensitive sub-pixels 302 located in the display area. Optionally, multiple light-emitting sub-pixels 301 and photosensitive sub-pixels 302 can form pixel units 30a, and multiple pixel units 30a are repeatedly arranged to form the display panel. Optionally, the light-emitting sub-pixels 301 can be the aforementioned OLED sub-pixels, and the photosensitive sub-pixels 302 can be the aforementioned OPD sub-pixels.

[0062] Optionally, the light-emitting sub-pixel 301 includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B to achieve color display of the display panel. Pixel unit 30a may include a red sub-pixel R, a green sub-pixel G, a blue sub-pixel B, and a photosensitive sub-pixel 302.

[0063] In some optional embodiments, the display panel further includes a pixel definition layer 400 disposed on the substrate 100, and an isolation structure 200 disposed on the side of the pixel definition layer 400 away from the substrate 100. The pixel definition layer 400 includes a pixel defining portion 410 and a first opening 420 and a second opening 430 disposed on the pixel defining portion 410. The first opening 420 is connected to a first isolation opening 211, and the second opening 430 is connected to a second isolation opening 212. At least a portion of the light-emitting structure 310 is located in the first opening 420, and at least a portion of the photoelectric sensing structure 320 is located in the second opening 430.

[0064] Optionally, the display panel also includes a first electrode 510 and a second electrode 520. The first electrode 510 is provided on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 facing the substrate 100, and the second electrode 520 is provided on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 away from the substrate 100.

[0065] Optionally, the first electrode 510 is located on the side of the pixel defining layer 400 facing the substrate 100, and the first electrode 510 is exposed by a pixel opening and a photosensitive opening. Optionally, the pixel defining portion 410 covers a portion of the first electrode 510, and a portion of the first electrode 510 is exposed by a first opening 420 and a second opening 430. The pixel defining portion 410 covers a portion of the edge of the first electrode 510, which ensures that the area of ​​the first electrode 510 exposed by the first opening 420 and the second opening 430 is large enough.

[0066] Optionally, in this embodiment, the light-emitting sub-pixel 301 may only include the light-emitting structure 310, and the photosensitive sub-pixel 302 may only include the photoelectric sensing structure 320. The first electrode 510 and the second electrode 520 may not be part of the light-emitting sub-pixel 301 and / or the photosensitive sub-pixel 302. In other embodiments, the light-emitting sub-pixel 301 may also include the light-emitting structure 310, the first electrode 510 and the second electrode 520 on both sides of the light-emitting structure 310, and the photosensitive sub-pixel 302 includes the photoelectric sensing structure 320, the first electrode 510 and the second electrode 520 on both sides of the photoelectric sensing structure 320.

[0067] Optionally, the second electrode 520 is located in the isolation opening 210 and is electrically connected to the isolation structure 200.

[0068] In these optional embodiments, the first electrode 510 and the second electrode 520 can drive the light-emitting structure 310 to emit light, while electrons and holes generated in the photoelectric sensing structure 320 can be transmitted to the first electrode 510 and the second electrode 520 to realize photoelectric sensing signal acquisition. The second electrode 520 is electrically connected to the isolation structure 200 so that multiple second electrodes 520 can be interconnected as surface electrodes through the isolation structure 200.

[0069] Optional, please refer to the following as well. Figures 2 to 4 The isolation structure 200 includes a first sublayer 201 and a second sublayer 202 located on the side of the first sublayer 201 away from the substrate 100. The orthographic projection of the first sublayer 201 onto the substrate 100 is located within the orthographic projection of the second sublayer 202 onto the substrate 100. The second electrode 520 and the first sublayer 201 are electrically connected to each other.

[0070] In these alternative embodiments, the size of the first sub-layer 201 can be smaller than the size of the second sub-layer 202, so that a concave structure can be formed under the second sub-layer 202. During the fabrication of the light-emitting structure 310 or the photoelectric sensing structure 320, the light-emitting material or the photoelectric sensing material is easily broken at the edge of the second sub-layer 202 to form independent light-emitting structures 310 or photoelectric sensing structures 320, which can simplify the fabrication process of the photoelectric sensing structure 320 and the light-emitting structure 310.

[0071] Optionally, during the fabrication of the second electrode 520, the conductive material used to fabricate the second electrode 520 is easily broken at the edge of the second sub-layer 202 to form multiple independent second electrodes 520. The second electrodes 520 and the first sub-layer 201 are electrically connected, so that multiple second electrodes 520 can be interconnected as surface electrodes through the isolation structure 200.

[0072] Optionally, the projected area of ​​the first sublayer 201 on the substrate 100 is smaller than the projected area of ​​the second sublayer 202 on the substrate 100, so as to facilitate the formation of a recess below the second sublayer 202.

[0073] Optionally, the isolation structure 200 further includes a third sublayer 203 located on the side of the first sublayer 201 facing the substrate 100, wherein the orthographic projection of the first sublayer 201 onto the substrate 100 is located within the orthographic projection of the third sublayer 203 onto the substrate 100, and the second electrode 520 and the third sublayer 203 are electrically connected to each other.

[0074] In these alternative embodiments, by providing a third sublayer 203, when the first sublayer 201 is side-etched so that its size is smaller than that of the second sublayer 202, the third sublayer 203 can provide protection to the film layer on the substrate 100 side. The second electrode 520 and the third sublayer 203 are electrically connected, which can improve the electrical connection yield between the second electrode 520 and the isolation structure 200.

[0075] Optional, such as Figure 3 and Figure 4 As shown, the isolation structure 200 is spaced apart from the inner wall of the first isolation opening 211 and the light-emitting structure 310. This is to prevent electrons generated in the light-emitting structure 310 from being transferred to other light-emitting structures 310 through the isolation structure 200 when the light-emitting structure 310 and the isolation structure 200 are in contact and connected, thus avoiding affecting the display effect of the display panel.

[0076] Optionally, the orthographic projection of the light-emitting structure 310 onto the substrate 100 and the orthographic projection of the third sub-layer 203 onto the substrate 100 are spaced apart. This ensures that the light-emitting structure 310 and the third sub-layer 203 are mutually insulated, improving the transfer of electrons generated within the light-emitting structure 310 to other light-emitting structures 310 via the isolation structure 200, thus minimizing the impact on the display effect of the display panel.

[0077] Optional, such as Figures 3 to 5 As shown, the isolation structure 200 is positioned at a distance from the inner wall of the second isolation opening 212 and the photoelectric sensing structure 320. This ensures that the photoelectric sensing structure 320 and the isolation structure 200 are mutually insulated, improving the transmission of electrons generated within the photoelectric sensing structure 320 to the isolation structure 200 and thus reducing their impact on the photoelectric sensing effect.

[0078] Optionally, the orthographic projection of the photoelectric sensing structure 320 onto the substrate 100 and the orthographic projection of the third sublayer 203 onto the substrate 100 are spaced apart. This ensures that the photoelectric sensing structure 320 and the third sublayer 203 are mutually insulated, improving the transmission of electrons generated within the photoelectric sensing structure 320 to the third sublayer 203 and thus reducing their impact on the photoelectric sensing effect.

[0079] Optionally, the display panel also includes an electron blocking layer 330. The electron blocking layer 330 is disposed on the side of the photoelectric sensing structure 320 facing away from the substrate 100. The electron blocking layer 330 is divided into a first portion 331 and a second portion 332 by an isolation structure 200. The first portion 331 is located in the first isolation opening 211, and the second portion 332 is located in the second isolation opening 212. Due to the presence of the isolation structure 200, during the fabrication process of the electron blocking layer 330, the electron blocking layer 330 can be divided into the first portion 331 and the second portion 332. The first portion 331, located in the first isolation opening 211, is used to improve the light emission effect, and the second portion 332, located in the second isolation opening 212, is used to improve the sensing effect.

[0080] Optionally, the light-emitting sub-pixel 301 further includes a hole transport layer 340 located on the side of the light-emitting structure 310 facing the substrate 100. A first portion 331 is located between the hole transport layer 340 and the light-emitting structure 310, and a second portion 332 is located between the first electrode 510 and the photosensitive structure 320. The first portion 331, located between the hole transport layer 340 and the light-emitting structure 310, serves to block electrons from being transported from the light-emitting structure 310 to the hole transport layer 340. The second portion 332, located between the first electrode 510 and the photosensitive structure 320, serves to block electrons from being transported from the photosensitive structure 320 to the first electrode 510.

[0081] Optionally, the display panel also includes a hole blocking layer 350 disposed on the side of the photoelectric sensing structure 320 facing the substrate 100. The hole blocking layer 350 is divided into a third portion 351 and a fourth portion 352 by the isolation structure 200. The third portion 351 is located in the first isolation opening 211, and the fourth portion 352 is located in the second isolation opening 212. Due to the presence of the isolation structure 200, during the fabrication of the hole blocking layer 350, the electron blocking layer 330 can be divided into the third portion 351 and the fourth portion 352. The third portion 351, located in the first isolation opening 211, is used to improve the light emission effect, and the fourth portion 352, located in the second isolation opening 212, is used to improve the sensing effect.

[0082] Optionally, the light-emitting sub-pixel 301 further includes an electron transport layer 360 located on the side of the light-emitting structure 310 facing away from the substrate 100. A third portion 351 is located between the electron transport layer 360 and the light-emitting structure 310, and a second portion 332 is located between the second electrode 520 and the photosensitive structure 320. The third portion 351, located between the electron transport layer 360 and the light-emitting structure 310, is used to block holes from being transmitted from the light-emitting structure 310 to the electron transport layer 360. The fourth portion 352, located between the second electrode 520 and the photosensitive structure 320, is used to block holes from being transmitted from the photosensitive structure 320 to the second electrode 520.

[0083] Optionally, the thickness of the second electrode 520 located on the side of the light-emitting structure 310 facing away from the substrate 100 is different from the thickness of the second electrode 520 located on the side of the photoelectric sensing structure 320 facing away from the substrate 100. That is, the thicknesses of the second electrode 520 corresponding to the photoelectric sensing structure 320 and the second electrode 520 corresponding to the light-emitting structure 310 can be different to meet the respective needs of the light-emitting structure 310 and the photoelectric sensing structure 320, thereby improving the display effect and the photoelectric sensing effect.

[0084] Due to the presence of the isolation structure 200, the light-emitting structure 310, the second electrode 520 on the light-emitting structure 310, and the photoelectric sensing structure 320 can be fabricated in different process steps during the fabrication of the light-emitting structure 310 and the photoelectric sensing structure 320. Therefore, the appropriate thickness of the second electrode 520 can be selected according to actual usage requirements to simultaneously meet the needs of the light-emitting structure 310 and the photoelectric sensing structure 320, thereby improving the display effect and photoelectric sensing effect.

[0085] In some alternative embodiments, such as Figures 2 to 6 As shown, the display panel also includes a light extraction layer and a first encapsulation layer 710. The light extraction layer includes a light extraction portion 610 located on the side of each second electrode 520 away from the substrate 100. The first encapsulation layer 710 includes an encapsulation portion 711 located on the side of each light extraction portion 610 away from the substrate 100. The multiple encapsulation portions 711 are independently arranged, and a gap is formed between adjacent encapsulation portions 711 on the side of the isolation structure 200 away from the substrate 100.

[0086] In these optional embodiments, a light extraction section 610 is provided on the second electrode 520 to improve the light extraction effect. The first encapsulation layer 710 includes a plurality of independently disposed encapsulation sections 711, which can realize the independent encapsulation of the light-emitting sub-pixels 301 and the photosensitive sub-pixels 302, and improve the problem of moisture transfer between different light-emitting sub-pixels 301 or photosensitive sub-pixels 302.

[0087] Optionally, the encapsulation portion 711 includes a first encapsulation segment 711a and a second encapsulation segment 711b. The first encapsulation segment 711a is located within the isolation opening 210, and the second encapsulation segment 711b is connected to the periphery of the first encapsulation segment 711a and located on the side of the isolation structure 200 facing away from the substrate 100. This increases the distribution area of ​​the encapsulation portion 711 and improves the sealing effect of the encapsulation portion 711.

[0088] Optional, such as Figures 3 to 7 As shown, the light extraction layer also includes a first virtual segment 613 located between the second segment and the isolation structure 200.

[0089] During the fabrication of the light-emitting structure 310 of the display panel, a light-emitting material layer for fabricating the light-emitting structure 310, a conductive material layer for fabricating the second electrode 520, a light extraction material layer for fabricating the light extraction layer, and an encapsulation material layer for fabricating the encapsulation portion 711 can be sequentially disposed on the side of the isolation opening 210 and the isolation structure 200 away from the substrate 100. Then, the light-emitting material layer, the conductive material layer, the light extraction material layer, and the encapsulation material layer are patterned to form the light-emitting structure 310, the second electrode 520, the light extraction portion 610, and the encapsulation portion 711.

[0090] During the fabrication of the photoelectric sensing structure 320 of the display panel, a photoelectric material layer for fabricating the photoelectric sensing structure 320, a conductive material layer for fabricating the second electrode 520, a light extraction material layer for fabricating the light extraction layer, and a packaging material layer for fabricating the packaging part 711 can be sequentially disposed on the side of the isolation opening 210 and the isolation structure 200 away from the substrate 100. Then, the photoelectric material layer, the conductive material layer, the light extraction material layer, and the packaging material layer are patterned to form the photoelectric sensing structure 320, the second electrode 520, the light extraction part 610, and the packaging part 711.

[0091] During the fabrication of the light extraction material layer and the encapsulation material layer, a portion of the light extraction material layer falls onto the isolation structure 200 to form the first virtual segment 613.

[0092] Optionally, a second virtual segment 30 is provided between the second segment and the isolation structure 200. The second virtual segment 30 is located between the first virtual segment 613 and the isolation structure 200, and the material of the second virtual segment 30 is the same as that of the light-emitting structure 310 or the photoelectric sensing structure 320.

[0093] As shown above, when preparing the light-emitting structure 310 or the photoelectric sensing structure 320, part of the light-emitting material layer or the photoelectric material layer will fall on the isolation structure 200 to form the second virtual segment 30.

[0094] Optionally, a virtual electrode 521 is also provided between the second virtual segment 30 and the first virtual segment 613. The virtual electrode 521 is made of the same material as the second electrode 520. As described above, during the fabrication of the second electrode 520, a portion of the conductive material layer falls onto the isolation structure 200 to form the virtual electrode 521.

[0095] Optional, please continue reading Figures 2 to 6 The light extraction section 610 includes a first light extraction section 611 located on the side of the light-emitting structure 310 facing away from the substrate 100 and a second light extraction section 612 located on the side of the photoelectric sensing structure 320 facing away from the substrate 100. The thickness of the first light extraction section 611 is different from the thickness of the second light extraction section 612. The first light extraction section 611 and the second light extraction section 612 can be fabricated in different process steps, so the thickness of the first light extraction section 611 and the second light extraction section 612 are different to meet the different requirements of the light-emitting sub-pixel 301 and the photosensitive sub-pixel 302.

[0096] Optional, such as Figure 3 As shown, the display panel also includes a second encapsulation layer 720, which is located on the side of the first encapsulation layer 710 facing away from the substrate 100. The material of the second encapsulation layer 720 includes organic materials. By providing the second encapsulation layer 720, the overall flatness of the encapsulation layer can be improved.

[0097] Optionally, the display panel may also include a third encapsulation layer 730, which is located on the side of the second encapsulation layer 720 away from the first encapsulation layer 710. The material of the third encapsulation layer 730 includes inorganic materials to further improve the encapsulation effect.

[0098] Optionally, the material of the first encapsulation layer 710 may include inorganic materials. This ensures that the first encapsulation layer 710 has good density, guaranteeing the sealing effect of the encapsulation portion 711.

[0099] Optional, such as Figures 2 to 7 As shown, the first electrode 510 corresponding to the light-emitting structure 310 is configured to transmit a first voltage VL-E, the second electrode 520 corresponding to the light-emitting structure 310 is configured to transmit a second voltage VU-E, the first electrode 510 corresponding to the photoelectric sensing structure 320 is configured to transmit a third voltage VL-P, and the second electrode 520 corresponding to the photoelectric sensing structure 320 is configured to transmit a fourth voltage VU-P. The first voltage, second voltage, third voltage, and fourth voltage satisfy the following relationship:

[0100] VL-E≥VU-E=VU-P≥VL-P.

[0101] In these optional embodiments, when the first voltage VL-E, the second voltage VU-E, the third voltage VL-P, and the fourth voltage VU-P satisfy the above relationship, current can flow from the first voltage to the second voltage, driving the light-emitting structure 310 to emit light, and the fourth voltage flows to the third voltage, and the current signal generated by photoelectric sensing is collected by the first electrode 510 and the second electrode 520.

[0102] Optional, such as Figure 8 As shown, in the light-emitting structure 310, holes (h+) move from the first electrode 510 toward the second electrode 520, and electrons (e-) move from the second electrode 520 toward the first electrode 510, so that electrons (e-) and holes (h+) combine at the light-emitting structure 310 to generate huge energy, driving the light-emitting structure 310 to emit light.

[0103] Optional, such as Figure 8 As shown, in the photoelectric sensing structure 320, holes (h+) move from the second electrode 520 toward the first electrode 510, and electrons (e-) move from the first electrode 510 toward the second electrode 520, so that the electrons (e-) and holes (h+) generated by photoelectric sensing can be collected by the first electrode 510 and the second electrode 520.

[0104] Optionally, the electric field direction in the light-emitting sub-pixel 301 is opposite to that in the photosensitive sub-pixel 302, so that the first electrode 510 and the second electrode 520 can drive the light-emitting sub-pixel 301 to emit light and collect the electrical signal generated by photoelectric sensing.

[0105] There are multiple ways to set the light-emitting structure 310 and the photoelectric sensing structure 320. The light-emitting structure 310 includes at least one of organic light-emitting diode material, quantum dot material, perovskite material or perovskite quantum dot material, and the photoelectric sensing structure 320 includes at least one of organic photodiode material, quantum dot material, perovskite material or perovskite quantum dot material, so as to meet the different usage requirements of the display panel.

[0106] In some alternative embodiments, please continue to refer to Figure 2 The projected area of ​​the first isolation opening 211 on the substrate 100 is larger than the projected area of ​​the second isolation opening 212 on the substrate 100. This increases the distribution area of ​​the light-emitting structure 310 and ensures the light-emitting display effect of the display panel.

[0107] And / or, the isolation structure 200 includes a first isolation portion 220 that encloses to form a first isolation opening 211 and a second isolation portion 230 that encloses to form a second isolation opening 212, wherein at least a portion of the first isolation portion 220 has a smaller orthographic projection width on the substrate 100 than the second isolation portion 230 has a smaller orthographic projection width on the substrate 100. This results in the first isolation opening 211 having a larger orthographic projection area on the substrate 100 than the second isolation opening 212 has a larger orthographic projection area on the substrate 100. This increases the distribution area of ​​the light-emitting structure 310, ensuring the light-emitting display effect of the display panel.

[0108] Optional, please continue reading Figure 2 and Figure 3 In the first isolation opening 211 and the first opening 420 located therein, the minimum distance between the wall surface of the pixel limiting portion 410 facing the first opening 420 and the wall surface of the isolation structure 200 facing the first isolation opening 211 is a first distance d1. In the second isolation opening 212 and the second opening 430 located therein, the minimum distance between the wall surface of the pixel limiting portion 410 facing the second opening 430 and the wall surface of the isolation structure 200 facing the second isolation opening 212 is a second distance d2. The first distance and the second distance satisfy: 2 / 3d2≤d1≤3 / 2d2.

[0109] In these alternative embodiments, the second distance d2 corresponding to the photosensitive sub-pixel 302 and the first distance d1 corresponding to the light-emitting sub-pixel 301 are close, and the photosensitive sub-pixel 302 and the light-emitting sub-pixel 301 can be fabricated using similar processes, simplifying the fabrication process of the display panel.

[0110] Optionally, the second electrode 520 corresponding to the light-emitting structure 310 is configured to transmit the emitted light from the light-emitting unit, thereby improving the influence of the second electrode 520 on the light emitted by the light-emitting structure 310. Optionally, the second electrode 520 corresponding to the photoelectric sensing structure 320 is configured to transmit the sensed light from the photoelectric sensing structure 320, thereby improving the influence of the second electrode 520 on the incident light onto the photoelectric sensing structure 320.

[0111] Optionally, the first electrode 510 corresponding to the light-emitting structure 310 is configured to reflect the emitted light from the light-emitting unit, thereby increasing the light emission of the light-emitting sub-pixel 301 and improving the display effect of the display panel. The first electrode 510 corresponding to the photoelectric sensing structure 320 is configured to reflect the sensed light from the photoelectric sensing structure 320, thereby increasing the amount of light incident on the photoelectric sensing structure 320 and improving the photosensitivity of the photoelectric sensing structure 320.

[0112] Optionally, the first electrode 510 includes a stacked metal oxide layer, a metal layer, and a metal oxide layer. For example, the first electrode 510 includes tin oxide, silver, and tin oxide, which gives the first electrode 510 good conductivity and reflectivity.

[0113] In some alternative embodiments, please refer to the following: Figures 1 to 10 A driving module 101 is provided in the substrate 100. The driving module 101 includes a first driving unit 110 for driving the light-emitting sub-pixel 301 and a second driving unit 120 for driving the photosensitive sub-pixel 302. The first driving unit 110 includes a polysilicon transistor and an oxide transistor, and the second driving unit 120 includes an oxide transistor.

[0114] Optionally, the first driving unit 110 includes a switching transistor 111 and a driving transistor 112. A polysilicon transistor can be used as the driving transistor 112, and an oxide transistor can be used as the switching transistor 111. The polysilicon transistor can be a low-temperature polysilicon transistor, and the silicon oxide transistor can be an indium gallium zinc oxide transistor. Optionally, the first driving unit 110 may also include a capacitor 113.

[0115] Optionally, the second driving unit 120 includes a first transistor 121, a second transistor 122, and a third transistor 123, wherein at least one of the first transistor 121, the second transistor 122, and the third transistor 123 is an oxide transistor.

[0116] Optionally, as described above, multiple luminescent sub-pixels 301 and photosensitive sub-pixels 302 constitute pixel unit 30a. The luminescent sub-pixels 301 include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. Pixel unit 30a includes a red sub-pixel R, a green sub-pixel G, a blue sub-pixel B, and a photosensitive sub-pixel 302.

[0117] like Figure 11 The image shows the spectral characteristics of the red sub-pixel R, green sub-pixel G, and blue sub-pixel B. Figures 12 to 14 This is a spectral characteristic diagram of the photosensitive band of the photoelectric sensing structure 320. In some optional embodiments, such as... Figures 11 to 14 As shown, the photosensitive wavelength of the photoelectric sensing structure 320 and the light-emitting wavelength of the light-emitting structure 310 at least partially overlap. This allows the light-emitting structure 310 to serve as the light source for the photoelectric sensing structure 320, simplifying the structure of the display panel.

[0118] Alternatively, in some other alternative embodiments, such as Figure 15 As shown, the display panel also includes a light-sensitive sub-pixel (IR), which emits sensor light. Figure 16 As shown, Figure 16 The photosensitive sub-pixel 302 is used to sense light. Figures 17 to 19 The image shows the photosensitive spectral characteristics of the photosensitive sub-pixel 302 in different embodiments. Optionally, the photosensitive sub-pixel 302 is used to sense sensor light. In these optional embodiments, a dedicated light source is provided for the photosensitive sub-pixel 302. Optionally, the pixel unit 30a described above includes a sensor light-emitting sub-pixel IR.

[0119] Optional, such as Figures 11 to 19 As shown, the light-emitting sub-pixel 301 includes a red light-emitting sub-pixel 301, a green light-emitting sub-pixel 301, and a blue light-emitting sub-pixel 301. The photoelectric sensing structure 320 is used to sense at least one of the red light, green light, and blue light. This allows the light-emitting sub-pixel 301 to serve as the light source for the photosensitive sub-pixel 302, simplifying the structure of the display panel.

[0120] For example, the photoelectric sensing structure 320 is used to sense green light. Alternatively, the photoelectric sensing structure 320 is used to sense both red and green light; or, one of the multiple photoelectric sensing structures 320 is used to sense green light while another is used to sense red light. Alternatively, the photoelectric sensing structure 320 is used to sense both red and infrared light.

[0121] Optionally, the same pixel unit 30a may include two photosensitive sub-pixels 302 for sensing different colors of light. Alternatively, in multiple pixel units 30a, one photosensitive sub-pixel 302 is used to sense green light, and another photosensitive sub-pixel 302 is used to sense red light, that is, two photosensitive sub-pixels 302 with different sensing spectral characteristics are disposed in two different pixel units 30a.

[0122] Optionally, the photosensitive sub-pixel IR is used to emit infrared light, and the photosensitive sub-pixel 302 is used to sense infrared light.

[0123] In some alternative embodiments, at least two photosensitive sub-pixels 302 are used to sense light of different wavelengths, thus enabling at least two photosensitive sub-pixels 302 to perform different functions.

[0124] In some alternative embodiments, such as Figure 20 and Figure 21 As shown, the display panel also includes a second light-shielding layer 800, which is located on the side of the first encapsulation layer 710 away from the substrate 100. The second light-shielding layer 800 includes a first light-shielding opening 810 and a second light-shielding opening 820. The orthographic projection of the first light-shielding opening 810 onto the substrate 100 and the orthographic projection of the light-emitting structure 310 onto the substrate 100 overlap at least partially. The orthographic projection of the second light-shielding opening 820 onto the substrate 100 and the orthographic projection of the photoelectric sensing structure 320 onto the substrate 100 overlap at least partially. The area of ​​the first light-shielding opening 810 is larger than the area of ​​the second light-shielding opening 820.

[0125] In these optional embodiments, the display panel further includes a second light-shielding layer 800. A first light-shielding opening 810 of the second light-shielding layer 800 is correspondingly disposed with the light-emitting structure 310 to mitigate the influence of the second light-shielding layer 800 on the light emitted by the light-emitting structure 310. A second light-shielding opening 820 is correspondingly disposed with the photoelectric sensing structure 320 to mitigate the influence of the second light-shielding layer 800 on the photoelectric sensing structure 320. Furthermore, by adding the second light-shielding layer 800, it can block light from other locations, allowing light to enter the photoelectric sensing structure 320 through the second light-shielding opening 820, thereby mitigating the influence of stray light on the photoelectric sensing structure 320.

[0126] Optionally, the second light-shielding layer 800 can be reused as a touch electrode TP. That is, the first light-shielding opening 810 and the second light-shielding opening 820 are provided on the film layer where the touch electrode TP is located, which can enrich the functions of the touch electrode TP.

[0127] like Figure 21 and Figure 22 As shown, the shape of the first light-shielding opening 810 can be configured in various ways. For example, optionally, the first light-shielding opening 810 is polygonal in the orthographic projection of the substrate 100; and / or, the first light-shielding opening 810 is quadrilateral in the orthographic projection of the substrate 100.

[0128] The shape of the second light-shielding opening 820 can be configured in various ways. Optionally, the orthographic projection shape of the second light-shielding opening 820 onto the substrate 100 can be circular, elliptical, or nearly circular. This allows light to form a pinhole image on the photoelectric sensing structure 320 when it passes through the second light-shielding opening 820, thereby improving the sensing performance of the photoelectric sensing structure 320.

[0129] Optionally, the distribution area of ​​a single second light-shielding opening 820 can be smaller than the distribution area of ​​a single photoelectric sensing structure 320. For example, the area of ​​a single second light-shielding opening 820 can be smaller than the distribution area of ​​a single second isolation opening 212 or a single second opening 430. This facilitates the formation of pinhole imaging at the second light-shielding opening 820.

[0130] Optionally, the pixel defining portion 410 may be made of an inorganic material. This reduces the thickness of the pixel defining portion 410, thereby achieving a thinner and lighter display panel.

[0131] Optionally, the orthographic projection of the first opening 420 onto the substrate 100 is polygonal, for example, the orthographic projection of the first opening 420 onto the substrate 100 is quadrilateral. This makes the shape of the light-emitting sub-pixel 301 more regular and easier to manufacture.

[0132] Optionally, the second opening 430 may be circular, elliptical, or nearly circular in its orthographic projection onto the substrate 100. This makes the shape of the second opening 430 more compatible with the shape of the second light-shielding opening 820.

[0133] In some alternative embodiments, please continue to refer to Figure 20 and Figure 23 The display panel also includes a light filter 620, located on the side of the first encapsulation layer 710 facing away from the substrate 100. The light filter 620 includes a first light filter 621 and a second light filter 622. The orthographic projection of the first light filter 621 onto the substrate 100 at least partially overlaps with the orthographic projection of the light-emitting sub-pixel 301 onto the substrate 100. The orthographic projection of the second light filter 622 onto the substrate 100 at least partially overlaps with the orthographic projection of the photosensitive sub-pixel 302 onto the substrate 100. By providing the first light filter 621, stray light emitted from the light-emitting structure 310 can be filtered, improving the display effect of the display panel. By providing the second light filter 622, stray light incident on the photosensitive structure 320 can be filtered, improving the photosensitive effect.

[0134] Optional, please refer to the following as well. Figures 20 to 24The second filter section 622 includes a first subunit 622a and a second subunit 622b, the first subunit 622a and the second subunit 622b having at least partially different light transmission bands. There can be multiple photosensitive sub-pixels 302. The orthographic projection of the first subunit 622a onto the substrate 100 and the photosensitive structure of one of the multiple photosensitive sub-pixels 302 onto the substrate 100 at least partially overlap. Similarly, the orthographic projection of the second subunit 622b onto the substrate 100 and the photosensitive structure of another of the multiple photosensitive sub-pixels 302 onto the substrate 100 at least partially overlap. That is, the first subunit 622a and the second subunit 622b are configured corresponding to different photosensitive sub-pixels 302, and the first subunit 622a and the second subunit 622b are used to filter different light rays, allowing light of different wavelengths to serve as the light source for the photosensitive sub-pixels 302.

[0135] Optionally, the multiple photosensitive sub-pixels 302 have the same photosensitive spectral characteristics, and at least two photosensitive sub-pixels 302 are respectively configured to correspond to the first sub-unit 622a and the second sub-unit 622b. For example, when the photosensitive sub-pixels 302 can sense red light and green light, one of the at least two photosensitive sub-pixels 302 corresponds to the first sub-unit 622a and the other corresponds to the second sub-unit 622b, so that some photosensitive sub-pixels 302 can sense red light and other photosensitive sub-pixels 302 can sense green light.

[0136] The photosensitive sub-pixel 302 corresponds to the first sub-unit 622a, meaning that the orthographic projection of the photosensitive sub-pixel 302's photoelectric sensing structure 320 onto the substrate 100 and the orthographic projection of the first sub-unit 622a onto the substrate 100 at least partially overlap. The photosensitive sub-pixel 302 corresponds to the second sub-unit 622b, meaning that the orthographic projection of the photosensitive sub-pixel 302's photoelectric sensing structure 320 onto the substrate 100 and the orthographic projection of the second sub-unit 622b onto the substrate 100 at least partially overlap.

[0137] Optional, such as Figures 20 to 24 As shown, the photosensitive sub-pixel 302 includes a first photosensitive unit 3021 and a second photosensitive unit 3022. The orthographic projection of the first sub-unit 622a onto the substrate 100 and the orthographic projection of the first photosensitive unit 3021 onto the substrate 100 at least partially overlap. The orthographic projection of the second sub-unit 622b onto the substrate 100 and the orthographic projection of the second photosensitive unit 3022 onto the substrate 100 at least partially overlap. The photosensitive wavelengths of the first photosensitive unit 3021 and the second photosensitive unit 3022 are different, and the light transmission band of the first sub-unit 622a and the light-sensitive band of the first photosensitive unit 3021 at least partially overlap, and the light transmission band of the second sub-unit 622b and the light-sensitive band of the second photosensitive unit 3022 at least partially overlap.

[0138] For example, the first photosensitive unit 3021 is used to sense the red light band, the first sub-unit 622a is used to transmit the red light band, the second photosensitive unit 3022 is used to sense the green light band, and the second sub-unit 622b is used to transmit the green light band. By setting the first photosensitive unit 3021 and the second photosensitive unit 3022 with different photosensitive bands, the photosensitive band range of the photosensitive sub-pixel 302 can be expanded.

[0139] Optionally, the display panel further includes a first light-shielding layer 630, which encloses a light-filtering opening, and the light-filtering portion 620 is located in the light-filtering opening. By providing the first light-shielding layer 630, the light-filtering unit can be limited, and the reflectivity of the film layer at the location of the light-filtering layer can be reduced, thereby improving the display effect of the display panel.

[0140] Optionally, the first filter 621 corresponding to the light-emitting sub-pixel 301 is used to transmit at least part of the emitted light from the light-emitting sub-pixel 301, so as to improve the influence of the first filter 621 on the emitted light from the light-emitting sub-pixel 301.

[0141] Optionally, the second filter 622 corresponding to the photosensitive sub-pixel 302 is used to transmit at least a portion of the light sensed by the photosensitive sub-pixel 302, so as to improve the effect of the second filter 622 on the light sensitivity of the photosensitive sub-pixel 302.

[0142] In some alternative embodiments, the first subunit 622a is used to transmit green light, and the second subunit 622b is used to transmit red light. The light-emitting structure 310 is typically used to emit red, green, and blue light. The first subunit 622a is used to transmit green light, and the second subunit 622b is used to transmit red light, so that the light-emitting structure 310 can serve as a light source for the photosensitive sub-pixel 302, simplifying the structure of the display panel.

[0143] Optionally, the number m of the first sub-unit 622a and the number n of the second sub-unit 622b satisfy the condition: m ≥ 2n. In the display panel, green light is more easily sensed, and when the number m of the first sub-unit 622a and the number n of the second sub-unit 622b satisfy the above relationship, the light-sensing effect can be improved.

[0144] Optionally, m ≥ 5n to further improve photosensitivity. Optionally, m ≥ 10n to further improve photosensitivity.

[0145] Optionally, when the first subunit 622a is used to transmit green light and the second subunit 622b is used to transmit red light, the photoelectric sensing structure 320 corresponding to the first subunit 622a is typically used to detect fingerprint recognition information, and the photoelectric sensing structure 320 corresponding to the second subunit 622b is used to detect biological health information such as blood sample concentration. When the number m of the first subunits 622a and the number n of the second subunits 622b satisfy the above relationship, it ensures that there are enough photoelectric sensing structures 320 to receive optical images such as fingerprints, and high-resolution images can be acquired. Thus, high-precision biometric identification is possible. In addition, the photoelectric sensing structure 320 mainly used for blood oxygen concentration (SpO2) detection does not require high-resolution images, so the function of the biological health sensor can also be maintained.

[0146] Optionally, the projected area of ​​the first sub-unit 622a on the substrate 100 is less than or equal to the projected area of ​​the second sub-unit 622b on the substrate 100. This makes the distribution area of ​​a single first sub-unit 622a more compatible with the distribution area of ​​the green light-emitting sub-pixel 301, and makes the distribution area of ​​a single second sub-unit 622b more compatible with the distribution area of ​​the red light-emitting sub-pixel 301.

[0147] Optionally, the luminescent sub-pixel 301 includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B, wherein the distribution area of ​​a single red sub-pixel R is larger than the distribution area of ​​a single green sub-pixel G, and the distribution area of ​​the blue sub-pixel B is larger than the distribution area of ​​a single red sub-pixel R.

[0148] Optionally, the first photosensitive unit 3021 is used to sense green light, and the second photosensitive unit 3022 is used to sense red light. The distribution area of ​​a single first photosensitive unit 3021 is smaller than the distribution area of ​​a single second photosensitive unit 3022, so that the distribution area of ​​the photosensitive sub-pixel 302 and the distribution area of ​​the light-emitting sub-pixel 301 are more compatible.

[0149] In some optional embodiments, the first sub-unit 622a is used to transmit red light, and the second sub-unit 622b is used to transmit infrared light. Optionally, the wavelength of the infrared light is 700nm to 1000nm. Optionally, the first photosensitive unit 3021 is used to sense applied light, and the second photosensitive unit 3022 is used to sense infrared light. Optionally, both the first photosensitive unit 3021 and the second photosensitive unit 3022 can also sense both red light and infrared light. This allows the photosensitive sub-pixel 302 to sense not only red light but also infrared light to meet different light-sensing requirements.

[0150] Optionally, the number p of the first subunit 622a and the number q of the second subunit 622b satisfy: p ≤ 2q, to ​​meet practical requirements. Optionally, p ≤ 5q. Optionally, p ≤ 10q.

[0151] Optionally, the projected area of ​​the first subunit 622a on the substrate 100 is less than or equal to the projected area of ​​the second subunit 622b on the substrate 100.

[0152] In some alternative embodiments, such as Figures 20 to 26 As shown, the display panel also includes a light adjustment layer 530, which is located on the side of the first encapsulation layer 710 away from the substrate 100. The light adjustment layer 530 includes a first adjustment layer, which includes a first adjustment protrusion 531 and a second adjustment protrusion 532. The orthographic projection of the first adjustment protrusion 531 on the substrate 100 and the orthographic projection of the light-emitting sub-pixel 301 on the substrate 100 at least partially overlap. The orthographic projection of the second adjustment protrusion 532 on the substrate 100 and the orthographic projection of the photoelectric sensing structure 320 on the substrate 100 at least partially overlap.

[0153] In these optional embodiments, by providing a light adjustment layer 530, with the first adjustment protrusion 531 of the light adjustment layer 530 corresponding to the light-emitting sub-pixel 301, the light emission effect of the light-emitting sub-pixel 301 can be improved, and the second adjustment protrusion 532 of the light adjustment layer 530 corresponding to the photosensitive sub-pixel 302, the sensing effect of the photosensitive sub-pixel 302 can be improved.

[0154] Optionally, the orthographic projections of the plurality of first adjustment protrusions 531 on the substrate 100 and the orthographic projections of the same light-emitting sub-pixel 301 on the substrate 100 at least partially overlap. The same light-emitting sub-pixel 301 is provided corresponding to the plurality of first adjustment protrusions 531, which can further improve the light emission effect.

[0155] Optionally, the second adjustment protrusion 532 and the photoelectric sensing structure 320 are arranged in a one-to-one correspondence, and the center of the adjustment protrusion in the orthographic projection of the substrate 100 overlaps with the center of the photoelectric sensing structure 320 in the orthographic projection of the substrate 100. The second adjustment protrusion 532 can have a light-focusing effect. The center of the second adjustment protrusion 532 and the center of the photoelectric sensing structure 320 are arranged in a corresponding manner, so that more light can be focused and incident on the center of the photoelectric sensing structure 320, thereby improving the photoelectric sensing effect.

[0156] Optionally, the display panel also includes a light-protecting layer 540, which is disposed on the side of the light-adjusting layer 530 facing away from the substrate 100. The refractive index of the light-protecting layer 540 is less than that of the light-adjusting layer 530. For the light-emitting sub-pixel 301, when emitted light is incident on the contact interface between the light-protecting layer 540 and the light-adjusting layer 530, because the refractive index of the light-protecting layer 540 is less than that of the light-adjusting layer 530, the light is deflected towards the center of the light-emitting sub-pixel 301. The angle of large-angle emitted light passing through the contact interface becomes smaller, allowing more light to be emitted from the direction of the positive viewing angle, thus improving the display effect of the display panel at the positive viewing angle. For the photosensitive sub-pixel 302, when the incident light passes through the contact interface, it converges, allowing more light to enter the photosensitive sub-pixel 302.

[0157] Optionally, the refractive index of the light adjustment layer 530 is greater than 1.5. For example, the refractive index of the light adjustment layer 530 is greater than 1.55. Optionally, the refractive index of the light protection layer 540 is less than 1.5. For example, the refractive index of the light protection layer 540 is less than 1.4.

[0158] Optionally, when the display panel includes the second light-shielding layer 800 and the second light-shielding opening 820 as described above, the second adjustment protrusion 532 overlaps with the orthographic projection center of the substrate 100 and the second light-shielding opening 820 overlaps with the orthographic projection center of the substrate 100.

[0159] An embodiment of the first aspect of this application provides a display panel, which can be seen in conjunction with the following: Figures 1 to 29 The display panel includes: a substrate 100; light-emitting sub-pixels 301 disposed on one side of the substrate 100, each including a light-emitting structure 310; and photosensitive sub-pixels 302 disposed on one side of the substrate 100, each including a photosensitive structure 320. The photosensitive structure 320 is made of a donor material 321 and an acceptor material 322. The donor material 321 and the acceptor material 322 interact to achieve photosensitive sensing, and light energy can be converted into electrical energy within the photosensitive structure 320. The light-emitting structure 310 is made of an organic light-emitting diode material, and electrical energy can be converted into light energy within the light-emitting structure 310.

[0160] Optionally, the material of the light-emitting structure 310 includes a host material and a dopant material. The light-emitting structure 310 is formed by co-depositing the dopant material and the host material under vacuum. The photoelectric sensing structure 320 is formed by co-depositing the donor material 321 and the acceptor material 322 under vacuum.

[0161] Optionally, the emission spectrum characteristics of the light-emitting structure 310 and the photosensitive spectrum characteristics of the photosensitive structure 320 at least partially overlap. That is, the photosensitive structure 320 can sense at least a portion of the light emitted by the light-emitting structure 310. For example, when the light-emitting structure 310 emits red, green, and blue light, the photosensitive structure 320 can sense at least one of red, green, and blue light. This allows the light-emitting structure 310 to serve as the light source for the photosensitive structure 320, eliminating the need for a separate light source for the photosensitive structure 320 and simplifying the structure of the display panel.

[0162] In some optional embodiments, the light-emitting structure 310 includes a host material and a dopant material, wherein the doping ratio of the dopant material in the host material is 0.01% to 10%. That is, the ratio of the volume and / or weight of the dopant material to the volume and / or weight of the host material is 0.01% to 10%, to ensure the performance of the light-emitting structure 310. For example, the doping ratio of the dopant material in the host material is 0.01%, 0.05%, 0.9%, 5.8%, 9.2%, and 10%.

[0163] Optionally, the dopant material has a doping ratio of 0.1% to 1% in the host material to improve the performance of the light-emitting structure 310. For example, the doping ratio of the dopant material in the host material is 0.1%, 0.5%, 0.65%, 0.9%, or 1%.

[0164] In some optional embodiments, the ratio of donor material 321 to acceptor material 322 is 20 / 1 to 1 / 20 to ensure the performance of the photosensitive structure 320. For example, the ratio of donor material 321 to acceptor material 322 is 20 / 1, 15 / 1, 18 / 20, 7 / 18, or 1 / 20.

[0165] Optionally, the doping ratio of donor material 321 to acceptor material 322 is 5 / 1 to 1 / 5 to improve the performance of photosensitive structure 320. For example, the ratio of donor material 321 to acceptor material 322 is 5 / 1, 4 / 1, 3 / 2, 2 / 3, or 1 / 5.

[0166] Optionally, the LUMO level of the donor material 321 is shallower than the LUMO level of the acceptor material 322, that is, the electronic energy level of the donor material 321 is higher than the electronic energy level of the acceptor material 322, and / or, the HOMO level of the donor material 321 is shallower than the HOMO level of the acceptor material 322.

[0167] Optionally, the acceptor material 322 includes a fullerene or a fullerene derivative. The fullerene includes C60 or C70.

[0168] Optionally, the photoelectric sensing structure 320 includes multiple film layers, and a donor layer is formed on the first electrode 510 side relative to the co-deposited layer of the donor material 321 and the acceptor material, and an acceptor layer is formed on the second electrode 520 side, with the donor layer and the acceptor layer in contact with the co-deposited layer.

[0169] Optional, such as Figures 27 to 29 As shown, the display panel also includes an electron blocking layer 330, which is disposed on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 facing the substrate 100, and the HOMO energy level of the donor material 321 is lower than or equal to the HOMO energy level of the electron blocking layer 330.

[0170] In the display panel provided in this embodiment, the display panel includes a substrate 100, light-emitting sub-pixels 301, photosensitive sub-pixels 302, and an electron blocking layer 330. The light-emitting structure 310 of the light-emitting sub-pixels 301 is used to realize the light-emitting display of the display panel, and the photoelectric sensing structure 320 of the photosensitive sub-pixels 302 is used to realize the photoelectric sensing function of the display panel. An electron blocking layer 330 is disposed on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 away from the substrate 100, and the HOMO energy level of the donor material 321 in the photoelectric sensing structure 320 is lower than or equal to the HOMO energy level of the electron blocking layer 330. This can reduce the energy difference between the electron blocking layer 330 and the donor material 321, allowing charge carriers to be transported better between the electron blocking layer 330 and the donor material 321, reducing the dark current density, increasing the current intensity in the photoelectric sensing structure 320, improving the photosensitivity of the photosensitive sub-pixels 302, and thus improving the performance of the photodetector in the display panel.

[0171] Optionally, the material of the light-emitting structure 310 includes organic light-emitting diode material.

[0172] The HOMO level of donor material 321 is lower than that of electron blocking layer 330, meaning that the HOMO level of donor material 321 is shallower than that of electron blocking layer 330.

[0173] Optionally, the LUMO energy level of the luminescent structure 310 may be lower than or equal to the LUMO energy level of the acceptor material 322.

[0174] Optionally, the small molecule material of the photoelectric sensing structure 320 may include: DMQA- DM-2,9-DMQA- SubPc- F5SubPc- DCV3T- NPD- DFPP- MPP- m-MTDATA- DBP- PbPc- CuPc- ZnPc- AlPcC- SiNc-C6- Alq3- Fullerene C60- Fullerene C70- At least one of them.

[0175] Optionally, the organic material in the photoelectric sensing structure 320 may include P3HT- MEH-PPV- PCDTBT- PDDTT- PTB7-Th- PBDB-T- R6G- PC61BM- PC71BM- PDI- ITIC- PFO- FBR- At least one of them.

[0176] The material of electron blocking layer 330 may include TAPC- TPD- TPD15- NPB- TIPS pentacene- Spiro-TPD- Spiro-MeOTAD- TFB- Poly-TPD- At least one of NiOx, V2O5, MoO3, SiOxNy, and CuSCN.

[0177] The material of the hole blocking layer 350 includes BCP- Bphen- NBphen- TAZ- C60- PEIE- PFN- At least one of TiO2, SnO2, and Cs2CO3.

[0178] Optionally, the donor material 321 is located on the side of the acceptor material 322 facing the electron blocking layer 330, so that holes in the donor material 321 can move to the electron blocking layer 330 more quickly.

[0179] In some alternative embodiments, such as Figures 27 to 29 As shown, the HOMO energy level of the electron blocking layer 330 is higher than or equal to the HOMO energy level of the light-emitting structure 310, which enables the electron blocking layer 330 to better block electrons that overflow from the light-emitting structure 310.

[0180] Optionally, the display panel further includes a first electrode 510 and a second electrode 520. The first electrode 510 is provided on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 facing the substrate 100, and the second electrode 520 is provided on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 away from the substrate 100. The electron blocking layer 330 is located on the side of the first electrode 510 away from the substrate 100.

[0181] In these alternative embodiments, the first electrode 510 and the second electrode 520 can be used to drive the light-emitting structure 310 to emit light, and the electrical signal generated by the photoelectric sensing structure 320 can be transmitted to the outside through the first electrode 510 and the second electrode 520. The electron blocking layer 330 is located between the first electrode 510 and the photoelectric sensing structure 320 and the light-emitting structure 310. The electron blocking layer 330 can block the flow of electrons overflowing from the light-emitting structure 310 to the first electrode 510, and can enable holes to be transmitted more effectively between the first electrode 510 and the photoelectric sensing structure 320.

[0182] Optionally, the light-emitting sub-pixel 301 further includes a hole transport layer 340 located on the side of the light-emitting structure 310 facing the substrate 100, and an electron blocking layer 330 including a first portion 331 and a second portion 332. The first portion 331 is located between the hole transport layer 340 and the light-emitting structure 310, and the second portion 332 is located between the first electrode 510 and the photoelectric sensing structure 320.

[0183] In these alternative embodiments, a first portion 331 of the electron blocking layer 330 is located between the hole transport layer 340 and the light-emitting structure 310 of the light-emitting sub-pixel 301, blocking the current overflowing from the light-emitting structure 310 from being transmitted to the hole transport layer 340. A second portion 332 of the electron blocking layer 330 is located between the first electrode 510 and the photosensitive structure 320, allowing holes to be better transported from the photosensitive structure 320 to the first electrode 510.

[0184] Optionally, the LUMO level of the hole transport layer 340 is lower than the LUMO level of the electron blocking layer 330, for example, the LUMO level of the hole transport layer 340 is lower than the LUMO level of the first part 331.

[0185] Optionally, the HOMO (Highest Occupied Molecular Orbital) energy level of the hole transport layer 340 is higher than the HOMO energy level of the electron blocking layer 330, so that holes can be transported from the hole transport layer 340 to the electron blocking layer 330 more effectively.

[0186] Optionally, the second portion 332 and the first electrode 510 can be connected in contact, that is, no other film layer may be provided between the second portion 332 and the first electrode 510, so as to improve the influence of other film layers on the transmission of holes between the second portion 332 and the first electrode 510.

[0187] Optionally, the LUMO level of the electron blocking layer 330 is higher than the LUMO level of the donor material 321. Optionally, the HOMO level of the electron blocking layer 330 is higher than the HOMO level of the donor material 321, so that holes can be better transported from the donor material 321 to the electron blocking layer 330.

[0188] In some alternative embodiments, such as Figures 27 to 29 As shown, the display panel also includes a hole blocking layer 350, which is disposed on the side of the light-emitting structure 310 and the photoelectric sensing structure 320 away from the substrate 100, and the LUMO energy level of the hole blocking layer 350 is higher than or equal to the LUMO energy level of the acceptor material 322.

[0189] In these alternative embodiments, a hole blocking layer 350 is provided on the side of the photoelectric sensing structure 320 away from the substrate 100, and the LUMO energy level of the hole blocking layer 350 is higher than or equal to the LUMO energy level of the acceptor material 322, making it difficult for electrons to be transferred from the photoelectric sensing structure 320 to the hole blocking layer 350.

[0190] Optionally, the LUMO level of the hole blocking layer 350 is lower than or equal to the LUMO level of the donor material 321. This makes it difficult for electrons to be transferred from the photoelectric sensing structure 320 to the hole blocking layer 350.

[0191] Optionally, the second electrode 520 is located on the side of the hole blocking layer 350 opposite to the photosensitive structure 320, and the LUMO energy level of the hole blocking layer 350 is lower than the LUMO energy level of the acceptor material 322. Optionally, the HOMO energy level of the hole blocking layer 350 is lower than the HOMO energy level of the acceptor material 322. This allows electrons to be transported more effectively from the acceptor material 322 layer to the hole blocking layer 350, and then to the second electrode 520.

[0192] In some optional embodiments, the light-emitting sub-pixel 301 further includes an electron transport layer 360 located on the side of the light-emitting structure 310 away from the substrate 100, and a hole blocking layer 350 including a third portion 351 and a fourth portion 352, the third portion 351 being located between the electron transport layer 360 and the light-emitting structure 310, and the second portion 332 being located between the second electrode 520 and the photoelectric sensing structure 320.

[0193] In these alternative embodiments, the third portion 351 of the hole blocking layer 350 is located between the electron transport layer 360 and the light-emitting structure 310, which can block holes from overflowing from the light-emitting structure 310 to the electron transport layer 360, and the fourth portion 352 of the hole blocking layer 350 is located between the second electrode 520 and the photosensitive structure 320, so that electrons can be better transported in the photosensitive structure 320 and the second electrode 520.

[0194] Optionally, the fourth portion 352 and the second electrode 520 are in contact; allowing electrons to be transported more effectively in the hole blocking layer 350 and the second electrode 520.

[0195] Optionally, the LUMO level of the electron transport layer 360 is lower than the LUMO level of the hole blocking layer 350, allowing electrons in the luminescent sub-pixel 301 to move more effectively from the electron transport layer 360 to the hole blocking layer 350.

[0196] Optionally, the HOMO level of the electron transport layer 360 is higher than the HOMO level of the hole blocking layer 350, allowing electrons in the luminescent pixel 301 to move more effectively from the electron transport layer 360 to the hole blocking layer 350.

[0197] In some optional embodiments, the photosensitive subpixel 302 further includes an electron extraction layer 370, which is located between the photosensitive structure 320 and the hole blocking layer 350. By providing the electron extraction layer 370, the electron extraction efficiency can be improved, thereby enhancing the photosensitivity.

[0198] Optionally, the LUMO energy level of the electron extraction layer 370 is higher than that of the hole blocking layer 350, allowing electrons to move more effectively from the electron extraction layer 370 to the hole blocking layer 350.

[0199] Optionally, the HOMO level of the electron extraction layer 370 is higher than the HOMO level of the hole blocking layer 350, making it difficult for holes to move from the electron extraction layer 370 to the hole blocking layer 350.

[0200] Optionally, the LUMO energy level of the electron extraction layer 370 is lower than that of the acceptor material 322, allowing electrons to move more effectively from the acceptor material 322 to the electron extraction layer 370.

[0201] Optionally, the HOMO energy level of the electron extraction layer 370 is lower than that of the acceptor material 322, making it difficult for holes to move from the acceptor material 322 to the electron extraction layer 370.

[0202] In some optional embodiments, the photosensitive subpixel 302 further includes a hole extraction layer 380, which is located between the electron blocking layer 330 and the photosensitive structure 320. By providing the electron extraction layer 370, the hole extraction efficiency can be improved, thereby enhancing the photosensitivity.

[0203] Optionally, the LUMO level of the electron blocking layer 330 is higher than the LUMO level of the hole extraction layer 380. Optionally, the HOMO level of the electron blocking layer 330 is higher than the HOMO level of the hole extraction layer 380. This allows holes to move more effectively from the electron blocking layer 330 to the hole extraction layer 380.

[0204] Optionally, the LUMO level of the hole extraction layer 380 is lower than the LUMO level of the donor material 321. Optionally, the HOMO level of the hole extraction layer 380 is higher than the HOMO level of the donor material 321. This allows holes to move more effectively from the donor material 321 to the hole extraction layer 380.

[0205] In some alternative embodiments, the acceptor material 322 includes a fullerene or a fullerene derivative to improve the performance of the photosensitive structure 320.

[0206] like Figures 1 to 29 As shown, an embodiment of the first aspect of this application also provides a display panel, including: a substrate 100; a light-emitting functional layer 300 disposed on one side of the substrate 100, the light-emitting functional layer 300 including a light-emitting structure 310 and a photosensitive structure 320, the material of the photosensitive structure 320 including a donor material 321 and an acceptor material 322; a hole blocking layer 350 disposed on the side of the light-emitting functional layer 300 away from the substrate 100, and the HOMO energy level of the hole blocking layer 350 is lower than or equal to the energy level of the acceptor material 322, and / or, the LUMO energy level of the hole blocking layer 350 is lower than or equal to the energy level of the acceptor material 322.

[0207] In this embodiment, the display panel includes a substrate 100, a light-emitting functional layer 300, and a hole-blocking layer 350. The light-emitting functional layer 300 includes a light-emitting structure 310 and a photosensitive structure 320, allowing the light-emitting structure 310 and the photosensitive structure 320 to be fabricated in the same process step, thus simplifying the fabrication process of the display panel. The HOMO energy level of the hole-blocking layer 350 is lower than or equal to the energy level of the acceptor material 322, and / or the LUMO energy level of the hole-blocking layer 350 is lower than or equal to the energy level of the acceptor material 322, enabling electrons to be better transferred from the acceptor material 322 to the hole-blocking layer 350, thereby improving the sensing effect of the photosensitive structure 320 and thus improving the performance of the photodetector in the display panel.

[0208] The display panel of this application embodiment and the display panel of any of the above embodiments can be cross-referenced.

[0209] In some optional embodiments, the photosensitive structure 320 is made of a donor material 321 and an acceptor material 322, which interact to achieve photosensitive sensing. Optionally, the donor material 321 is located on the side of the acceptor material 322 facing the first electrode 510.

[0210] Optional, as above, such as Figures 27 to 29 As shown, the display panel also includes an electron blocking layer 330, which is disposed on the side of the photoelectric sensing structure 320 away from the substrate 100, and the HOMO energy level of the donor material 321 is lower than or equal to the HOMO energy level of the electron blocking layer 330. The arrangement of the electron blocking layer 330 is as described above and will not be repeated here.

[0211] Optionally, the electron blocking layer 330 is located in the second isolation opening 212, so that the electron blocking layer 330 can be configured to correspond with the photoelectric sensing structure 320.

[0212] Optionally, as described above, the light-emitting sub-pixel 301 of the display panel further includes a hole transport layer 340 located on the side of the light-emitting structure 310 facing the substrate 100. The electron blocking layer 330 includes a first portion 331 and a second portion 332. The first portion 331 is located between the hole transport layer 340 and the light-emitting structure 310, and the second portion 332 is located between the first electrode 510 and the photoelectric sensing structure 320. The hole transport layer 340 is configured as described above and will not be repeated here.

[0213] Optionally, the materials of the light-emitting structure 310 and the photoelectric sensing structure 320 are set as described above, and will not be repeated here.

[0214] In some optional embodiments, the display panel further includes a hole blocking layer 350 disposed on the side of the photosensitive structure 320 facing the substrate 100, and the LUMO energy level of the hole blocking layer 350 is higher than or equal to the LUMO energy level of the acceptor material 322. The hole blocking layer 350 is disposed as described above and will not be repeated here.

[0215] In some optional embodiments, the photosensitive sub-pixel 302 further includes an electron extraction layer 370, which is located between the photoelectric sensing structure 320 and the hole blocking layer 350. The configuration of the electron extraction layer 370 is as described above and will not be repeated here.

[0216] In some optional embodiments, the photosensitive sub-pixel 302 further includes a hole extraction layer 380, which is located between the electron blocking layer 330 and the photoelectric sensing structure 320. The hole extraction layer 380 is configured as described above and will not be repeated here.

[0217] like Figures 1 to 31 As shown, an embodiment of the second aspect of this application also provides a display module 10, including the display panel of any of the embodiments of the first aspect described above. Since the display module 10 provided by the embodiment of the second aspect of this application includes the display panel of any of the embodiments of the first aspect described above, the display module 10 provided by the embodiment of the second aspect of this application has the beneficial effects of the display panel of any of the embodiments of the first aspect described above, which will not be repeated here.

[0218] The display module 10 in this application embodiment includes, but is not limited to, devices with display functions such as mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, and control consoles.

[0219] Optional, such as Figures 30 to 33 As shown, the photosensitive sub-pixel 302 can be used for fingerprint recognition. When the light-emitting sub-pixel 301 serves as the light source for the photosensitive sub-pixel 302, the light emitted by the light-emitting sub-pixel 301 illuminates the surface of the display panel and reaches the user's finger, then reflects back to the photosensitive sub-pixel 302. The photosensitive sub-pixel 302 detects the light reflected by the finger, thereby achieving the purpose of fingerprint recognition. The photosensitive sub-pixel 302 can also be used to acquire biometric information such as palm veins, pulse, blood pressure, and blood oxygen concentration.

[0220] In some optional embodiments, the display module 10 further includes the aforementioned encapsulation layer and second light-shielding layer 800. The encapsulation layer and the second light-shielding layer 800 are configured as described above and will not be repeated here. For example, the encapsulation layer is located on the side of the light-emitting sub-pixel 301 and the photosensitive sub-pixel 302 facing away from the substrate 100; the second light-shielding layer 800 is located on the side of the encapsulation layer facing away from the substrate 100, and the light-shielding layer includes a first light-shielding opening 810 and a second light-shielding opening 820. The orthographic projection of the first light-shielding opening 810 onto the substrate 100 and the orthographic projection of the light-emitting structure 310 onto the substrate 100 at least partially overlap, and the orthographic projection of the second light-shielding opening 820 onto the substrate 100 and the orthographic projection of the photoelectric sensing structure 320 onto the substrate 100 at least partially overlap, and the area of ​​the first light-shielding opening 810 is larger than the area of ​​the second light-shielding opening 820.

[0221] The display module 10 also includes the aforementioned light adjustment layer 530, light protection layer 540, etc.

[0222] An embodiment of the second aspect of this application also provides a display module 10, including: a substrate 100; a pixel unit 30a disposed on the substrate 100 and including a light-emitting sub-pixel 301 and a photosensitive sub-pixel 302; and a filter portion 620 disposed on the side of the pixel unit 30a facing away from the substrate 100. The filter portion 620 includes a first filter portion 621 and a second filter portion 622. The orthographic projection of the first filter portion 621 on the substrate 100 and the orthographic projection of the light-emitting sub-pixel 301 on the substrate 100 at least partially overlap. The orthographic projection of the second filter portion 622 on the substrate 100 and the orthographic projection of the photosensitive sub-pixel 302 on the substrate 100 at least partially overlap. The second filter portion 622 includes a first sub-unit 622a and a second sub-unit 622b. The light transmission bands of the first sub-unit 622a and the second sub-unit 622b are at least partially different.

[0223] In the display panel provided in this embodiment, the display panel includes a substrate 100, pixel units 30a, and a filter unit 620. The light-emitting sub-pixels 301 of the pixel units 30a are used to realize the light emission display of the display panel, and the photosensitive sub-pixels 302 are used to realize the sensing function of the display panel. By providing the first filter unit 621, stray light emitted from the light-emitting structure 310 can be filtered, thereby improving the display effect of the display panel. By providing the second filter unit 622, stray light incident on the photosensitive structure 320 can be filtered, thereby improving the photosensitive effect. The first sub-unit 622a and the second sub-unit 622b can be configured to correspond to different photosensitive sub-pixels 302. The first sub-unit 622a and the second sub-unit 622b are used to filter different light rays, allowing light of different wavelengths to serve as the light source for the photosensitive sub-pixels 302.

[0224] The display module 10 of this application embodiment and the display module 10 of the above embodiments can be cross-referenced. The display module 10 of this application embodiment may include the display panel of any of the above embodiments.

[0225] For example, the arrangement of photosensitive sub-pixels 302 in display module 10 can be referred to the above. Multiple photosensitive sub-pixels 302 have the same photosensitive spectral characteristics, and at least two photosensitive sub-pixels 302 are respectively set to the first sub-unit 622a and the second sub-unit 622b.

[0226] For example, the photosensitive sub-pixel 302 includes the first photosensitive unit 3021 and the second photosensitive unit 3022 mentioned above. The arrangement of the first photosensitive unit 3021 and the second photosensitive unit 3022 is as described above and will not be repeated here.

[0227] Optionally, when the first subunit 622a is used to transmit green light and the second subunit 622b is used to transmit red light, the setting method of the number m of the first subunit 622a and the number n of the second subunit 622b is as described above, and will not be repeated here.

[0228] Optionally, when the first subunit 622a is used to transmit red light and the second subunit 622b is used to transmit infrared light, the number of the first subunit 622a p and the number of the second subunit 622b q satisfy the setting method of p≤2q as described above, and will not be repeated here.

[0229] In any of the above embodiments, optionally, the light-emitting structure 310 of the light-emitting sub-pixel 301 is a structure for converting electrical signals into light signals to realize the display panel's light-emitting display. Optionally, the photoelectric sensing structure 320 of the photosensitive sub-pixel 302 is a structure for converting light signal lines into electrical signals to realize the photoelectric detection function of the display panel. Optionally, the photoelectric sensing unit can be the aforementioned OPD device.

[0230] Optionally, one of the first electrode 510 and the second electrode 520 may be an anode, and the other a cathode. This application embodiment uses the first electrode 510 as the anode and the second electrode 520 as the cathode for illustrative purposes. The material of the first electrode 510 may include indium tin oxide, and the material of the second electrode 520 may include magnesium (chemical symbol: Mg), silver (chemical symbol: Ag), ytterbium (chemical symbol: Yb), etc.

[0231] In some alternative embodiments, the donor material 321 and the acceptor material 322 interact to achieve photoelectric sensing functionality.

[0232] In any of the above embodiments, when the display panel includes a third encapsulation layer 730, a first light-shielding layer 630, and a light-filtering portion 620, the first light-shielding layer 630 and the light-filtering portion 620 may be located on the side of the third encapsulation layer 730 opposite to the second encapsulation layer 720.

[0233] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A display panel, characterized in that, include: substrate; An isolation structure is disposed on one side of the isolation structure, the isolation structure enclosing and forming a plurality of isolation openings, the plurality of isolation openings including a first isolation opening and a second isolation opening; The light-emitting sub-pixel includes a light-emitting structure located at the first isolation opening; The photosensitive sub-pixel includes a photoelectric sensing structure located at the second isolation opening.

2. The display panel according to claim 1, characterized in that, It also includes a first electrode and a second electrode. The first electrode is provided on the side of the light-emitting structure and the photoelectric sensing structure facing the substrate, and the second electrode is provided on the side of the light-emitting structure and the photoelectric sensing structure away from the substrate. The second electrode is located in the isolation opening and is electrically connected to the isolation structure. Preferably, the isolation structure includes a first sublayer and a second sublayer located on the side of the first sublayer facing away from the substrate, wherein the orthographic projection of the first sublayer on the substrate is located within the orthographic projection of the second sublayer on the substrate, and the second electrode and the first sublayer are electrically connected to each other. Preferably, the isolation structure further includes a third sublayer located on the side of the first sublayer facing the substrate, wherein the orthographic projection of the first sublayer on the substrate is located within the orthographic projection of the third sublayer on the substrate, and the second electrode and the third sublayer are electrically connected to each other. Preferably, the isolation structure is disposed at an interval from the inner wall surface of the first isolation opening and the light-emitting structure; Preferably, the light-emitting structure and the third sublayer are spaced apart in the orthographic projection of the substrate; Preferably, the isolation structure is disposed at an interval from the inner wall surface of the second isolation opening and the photoelectric sensing structure; Preferably, the display panel further includes an electron blocking layer, which is disposed on the side of the photoelectric sensing structure away from the substrate. The electron blocking layer is divided into a first portion and a second portion by the isolation structure, the first portion being located at the first isolation opening and the second portion being located at the second isolation opening. Preferably, the light-emitting sub-pixel further includes a hole transport layer located on the side of the light-emitting structure facing the substrate, the first portion being located between the hole transport layer and the light-emitting structure, and the second portion being located between the first electrode and the photoelectric sensing structure; Preferably, the display panel further includes a hole blocking layer disposed on the side of the photoelectric sensing structure facing the substrate. The hole blocking layer is divided into a third portion and a fourth portion by the isolation structure. The third portion is located at the first isolation opening, and the fourth portion is located at the second isolation opening. Preferably, the light-emitting sub-pixel further includes an electron transport layer located on the side of the light-emitting structure opposite to the substrate, the third portion is located between the electron transport layer and the light-emitting structure, and the second portion is located between the second electrode and the photoelectric sensing structure; Preferably, the photoelectric sensing structure and the third sublayer are spaced apart in the orthographic projection of the substrate. Preferably, the thickness of the second electrode located on the side of the light-emitting structure opposite to the substrate is different from the thickness of the second electrode located on the side of the photoelectric sensing structure opposite to the substrate. Preferably, the first electrode corresponding to the light-emitting structure is configured to transmit a first voltage VL-E, the second electrode corresponding to the light-emitting structure is configured to transmit a second voltage VU-E, the first electrode corresponding to the photoelectric sensing structure is configured to transmit a third voltage VL-P, and the second electrode corresponding to the photoelectric sensing structure is configured to transmit a fourth voltage VU-P. The first voltage, the second voltage, the third voltage, and the fourth voltage satisfy the following relationship: VL-E≥VU-E=VU-P≥VL-P; Preferably, in the light-emitting structure, holes move from the first electrode toward the second electrode, and electrons move from the second electrode toward the first electrode; In the photoelectric sensing structure, holes move from the second electrode toward the first electrode, and electrons move from the first electrode toward the second electrode; Preferably, the light-emitting structure includes at least one of organic light-emitting diode material, quantum dot material, perovskite material or perovskite quantum dot material, and the photoelectric sensing structure includes at least one of organic photodiode material, quantum dot material, perovskite material or perovskite quantum dot material. Preferably, the second electrode corresponding to the light-emitting structure is configured to transmit the emitted light from the light-emitting structure, and the second electrode corresponding to the photoelectric sensing structure is configured to transmit the sensed light from the photoelectric sensing structure. Preferably, the first electrode corresponding to the light-emitting structure is configured to reflect the emitted light of the light-emitting unit, and the first electrode corresponding to the photoelectric sensing structure is configured to reflect the sensed light of the photoelectric sensing structure. Preferably, the first electrode comprises a metal oxide layer, a metal layer, and a metal oxide layer stacked together.

3. The display panel according to claim 2, characterized in that, Also includes: The light extraction layer includes a light extraction portion located on the side of each second electrode facing away from the substrate; The first encapsulation layer includes an encapsulation portion located on the side of each of the light extraction portions away from the substrate. The multiple encapsulation portions are arranged independently of each other, and a gap is formed between adjacent encapsulation portions on the side of the isolation structure away from the substrate. Preferably, the encapsulation portion includes a first encapsulation segment and a second encapsulation segment, the first encapsulation segment being located within the isolation opening, and the second encapsulation segment being connected to the periphery of the first encapsulation segment and located on the side of the isolation structure opposite to the substrate; Preferably, the light extraction layer further includes a first virtual segment located between the second encapsulation segment and the isolation structure; Preferably, a second virtual segment is further provided between the second encapsulation segment and the isolation structure. The second virtual segment is located between the first virtual segment and the isolation structure, and the material of the second virtual segment is the same as that of the light-emitting structure or the photoelectric sensing structure. Preferably, a virtual electrode is further provided between the second virtual segment and the first virtual segment, and the virtual electrode and the second electrode are made of the same material; Preferably, the light extraction section includes a first light extraction section located on the side of the light-emitting structure opposite to the substrate and a second light extraction section located on the side of the photoelectric sensing structure opposite to the substrate, wherein the thickness of the first light extraction section and the thickness of the second light extraction section are different; Preferably, the system further includes a second encapsulation layer located on the side of the first encapsulation layer opposite to the substrate, and the material of the second encapsulation layer includes an organic material; Preferably, it further includes a third encapsulation layer located on the side of the second encapsulation layer opposite to the first encapsulation layer, and the material of the third encapsulation layer includes inorganic materials; Preferably, the material of the first encapsulation layer includes inorganic materials.

4. The display panel according to claim 3, characterized in that, Also includes: A light-filtering section is located on the side of the first encapsulation layer facing away from the substrate. The light-filtering section includes a first light-filtering section and a second light-filtering section. The orthographic projection of the first light-emitting sub-pixel on the substrate at least partially overlaps with the orthographic projection of the second light-emitting sub-pixel on the substrate at least partially overlaps with the orthographic projection of the photosensitive sub-pixel on the substrate. The second filter unit includes a first sub-unit and a second sub-unit, and the light transmission bands of the first sub-unit and the second sub-unit are at least partially different. Preferably, the multiple photosensitive sub-pixels have the same photosensitive spectral characteristics, and at least two of the photosensitive sub-pixels are respectively configured to correspond to the first sub-unit and the second sub-unit; Preferably, the photosensitive sub-pixel includes a first photosensitive unit and a second photosensitive unit, wherein the orthographic projection of the first sub-unit on the substrate and the orthographic projection of the first photosensitive unit on the substrate at least partially overlap, and the orthographic projection of the second sub-unit on the substrate and the orthographic projection of the second photosensitive unit on the substrate at least partially overlap, wherein the first photosensitive unit and the second photosensitive unit have different photosensitive wavelengths, and the light transmission band of the first sub-unit and the photosensitive band of the first photosensitive unit at least partially overlap, and the light transmission band of the second sub-unit and the photosensitive band of the second photosensitive unit at least partially overlap; Preferably, it further includes a first light-shielding layer that surrounds and forms a light-filtering opening, with the light-filtering portion located in the light-filtering opening; Preferably, the first filter corresponding to the light-emitting sub-pixel is used to transmit at least a portion of the emitted light from the light-emitting sub-pixel; Preferably, the second filter corresponding to the photosensitive sub-pixel is used to transmit at least a portion of the sensor light of the photosensitive sub-pixel.

5. The display panel according to claim 4, characterized in that, The first subunit is used to transmit green light, and the second subunit is used to transmit red light; Preferably, the number of the first sub-units m and the number of the second sub-units n satisfy: m ≥ 2n; Preferably, m ≥ 5n; Preferably, m ≥ 10n; Preferably, the projected area of ​​the first sub-unit on the substrate is less than or equal to the projected area of ​​the second sub-unit on the substrate.

6. The display panel according to claim 4, characterized in that, The first subunit is used to transmit red light, and the second subunit is used to transmit infrared light; Preferably, the number of the first sub-units p and the number of the second sub-units q satisfy: p ≤ 2q; Preferably, p≤5q; Preferably, p≤10q; Preferably, the projected area of ​​the first sub-unit on the substrate is less than or equal to the projected area of ​​the second sub-unit on the substrate.

7. The display panel according to claim 3, characterized in that, Also includes: A light adjustment layer is located on the side of the first encapsulation layer opposite to the substrate. The light adjustment layer includes a first adjustment layer, which includes a first adjustment protrusion and a second adjustment protrusion. The orthographic projection of the first adjustment protrusion on the substrate and the orthographic projection of the light-emitting sub-pixel on the substrate at least partially overlap. The orthographic projection of the second adjustment protrusion on the substrate and the orthographic projection of the photoelectric sensing structure on the substrate at least partially overlap. Preferably, the orthographic projections of the plurality of first adjustment protrusions on the substrate and the orthographic projections of the same light-emitting sub-pixel on the substrate at least partially overlap; Preferably, the second adjustment protrusion and the photoelectric sensing structure are arranged in a one-to-one correspondence, and the center of the adjustment protrusion in the orthographic projection of the substrate and the center of the photoelectric sensing structure in the orthographic projection of the substrate overlap. Preferably, it further includes a light-protecting layer, which is disposed on the side of the light-adjusting layer opposite to the substrate, and the refractive index of the light-protecting layer is less than the refractive index of the light-adjusting layer; Preferably, the refractive index of the light-adjusting layer is greater than 1.5; Preferably, the refractive index of the light-adjusting layer is greater than 1.55; Preferably, the refractive index of the photoprotective layer is less than 1.5; Preferably, the refractive index of the photoprotective layer is less than 1.

4.

8. The display panel according to claim 3, characterized in that, Also includes: The second light-shielding layer is located on the side of the first encapsulation layer away from the substrate. The second light-shielding layer includes a first light-shielding opening and a second light-shielding opening. The first light-shielding opening and the light-emitting structure on the substrate at least partially overlap in their orthogonal projections. The second light-shielding opening and the photoelectric sensing structure on the substrate at least partially overlap in their orthogonal projections. The area of ​​the first light-shielding opening is larger than the area of ​​the second light-shielding opening. Preferably, the second light-shielding layer is reused as a touch electrode; Preferably, the first light-shielding opening has a polygonal shape in the orthographic projection of the substrate; Preferably, the first light-shielding opening is quadrilateral in the orthographic projection of the substrate; Preferably, the shape of the second light-shielding opening in the orthographic projection of the substrate is circular, elliptical, or nearly circular.

9. The display panel according to claim 2, characterized in that, The materials of the photoelectric sensing structure include donor materials and acceptor materials; Preferably, the display panel further includes an electron blocking layer, which is disposed on the side of the photoelectric sensing structure away from the substrate, and the HOMO energy level of the donor material is lower than or equal to the HOMO energy level of the electron blocking layer. Preferably, at least a portion of the electron blocking layer is located within the second isolation opening; Preferably, the HOMO energy level of the electron blocking layer is higher than or equal to the HOMO energy level of the light-emitting structure; Preferably, the electron blocking layer is located on the side of the first electrode opposite to the substrate; Preferably, the light-emitting sub-pixel further includes a hole transport layer located on the side of the light-emitting structure facing the substrate, and the electron blocking layer includes a first portion and a second portion, the first portion being located between the hole transport layer and the light-emitting structure, and the second portion being located between the first electrode and the photoelectric sensing structure; Preferably, the first portion and the second portion are separated by the isolation structure, with the first portion located at the first isolation opening and the second portion located at the second isolation opening; Preferably, the second portion and the first electrode are in contact connection; Preferably, the LUMO energy level of the hole transport layer is lower than the LUMO energy level of the electron blocking layer; Preferably, the HOMO energy level of the hole transport layer is higher than the HOMO energy level of the electron blocking layer; Preferably, the LUMO energy level of the electron blocking layer is higher than the LUMO energy level of the donor material; Preferably, the HOMO energy level of the electron blocking layer is higher than the HOMO energy level of the donor material; Preferably, the light-emitting structure includes a host material and a dopant material, wherein the dopant material contains 0.01% to 10% relative to the host material; Preferably, the dopant material contains 0.1% to 1% relative to the host material; Preferably, the doping ratio of the donor material to the acceptor material is 20 / 1 to 1 / 20; Preferably, the doping ratio of the donor material to the acceptor material is 5 / 1 to 1 / 5; Preferably, the receptor material comprises fullerene or a fullerene derivative.

10. The display panel according to claim 9, characterized in that, It also includes a hole blocking layer disposed on the side of the photoelectric sensing structure facing the substrate, and the LUMO energy level of the hole blocking layer is higher than or equal to the energy level of the acceptor material; Preferably, the LUMO energy level of the hole blocking layer is lower than or equal to the LUMO energy level of the donor material; Preferably, the light-emitting sub-pixel further includes an electron transport layer located on the side of the light-emitting structure opposite to the substrate, and the hole blocking layer includes a third portion and a fourth portion, the third portion being located between the electron transport layer and the light-emitting structure, and the fourth portion being located between the second electrode and the photoelectric sensing structure; Preferably, the third portion and the fourth portion are separated by the isolation structure, with the third portion located at the first isolation opening and the fourth portion located at the second isolation opening; Preferably, the fourth portion and the second electrode are in contact connection; Preferably, the LUMO energy level of the electron transport layer is lower than the LUMO energy level of the hole blocking layer; Preferably, the HOMO energy level of the electron transport layer is higher than the HOMO energy level of the hole blocking layer; Preferably, the LUMO energy level of the hole-blocking layer is lower than the LUMO energy level of the acceptor material; Preferably, the HOMO energy level of the hole-blocking layer is lower than the HOMO energy level of the acceptor material.

11. The display panel according to claim 10, characterized in that, The photosensitive sub-pixel also includes an electron extraction layer, which is located between the photoelectric sensing structure and the hole blocking layer; Preferably, the LUMO energy level of the electron extraction layer is higher than the LUMO energy level of the hole blocking layer; Preferably, the HOMO energy level of the electron extraction layer is higher than the HOMO energy level of the hole blocking layer; Preferably, the LUMO energy level of the electron extraction layer is lower than the LUMO energy level of the acceptor material; Preferably, the HOMO energy level of the electron extraction layer is lower than the HOMO energy level of the acceptor material.

12. The display panel according to claim 9, characterized in that, The photosensitive sub-pixel further includes a hole extraction layer, which is located between the electron blocking layer and the photoelectric sensing structure; Preferably, the LUMO energy level of the electron blocking layer is higher than the LUMO energy level of the hole extraction layer; Preferably, the HOMO energy level of the electron blocking layer is higher than the HOMO energy level of the hole extraction layer; Preferably, the LUMO energy level of the hole extraction layer is lower than the LUMO energy level of the donor material; Preferably, the HOMO energy level of the HEL is higher than the HOMO energy level of the donor material.

13. The display panel according to claim 1, characterized in that, The luminescence spectrum characteristics of the light-emitting structure and the photosensitive spectrum characteristics of the photoelectric sensing structure overlap at least partially; And / or, the electric field direction of the light-emitting structure is opposite to the electric field direction of the photoelectric sensing structure.

14. The display panel according to claim 1, characterized in that, The projected area of ​​the first isolation opening on the substrate is larger than the projected area of ​​the second isolation opening on the substrate. And / or, the isolation structure includes a first isolation portion that encloses to form the first isolation opening and a second isolation portion that encloses to form the second isolation opening, wherein at least a portion of the first isolation portion has a projected width on the substrate that is smaller than the projected width of the second isolation portion on the substrate.

15. The display panel according to claim 1, characterized in that, It also includes a pixel definition layer disposed on the substrate, and an isolation structure disposed on the side of the pixel definition layer away from the substrate. The pixel definition layer includes a pixel defining portion and a first opening and a second opening disposed on the pixel defining portion. The first opening and the first isolation opening are connected, and the second opening and the second isolation opening are connected. At least a portion of the light-emitting structure is located in the first opening, and at least a portion of the photoelectric sensing structure is located in the second opening. Preferably, it further includes a first electrode and a second electrode. The first electrode is provided on the side of the light-emitting structure and the photoelectric sensing structure facing the substrate, and the second electrode is provided on the side of the light-emitting structure and the photoelectric sensing structure away from the substrate. The pixel defining portion covers part of the first electrode, and part of the first electrode is exposed through the first opening and the second opening. Preferably, in the first isolation opening and the first opening located therein, the minimum distance between the wall surface of the pixel defining portion facing the first opening and the wall surface of the isolation structure facing the first isolation opening is a first distance d1; in the second isolation opening and the second opening located therein, the minimum distance between the wall surface of the pixel defining portion facing the second opening and the wall surface of the isolation structure facing the second isolation opening is a second distance d2; the first distance and the second distance satisfy: 2 / 3d2≤d1≤3 / 2d2; Preferably, the material of the pixel defining portion includes inorganic materials; Preferably, the first opening has a polygonal shape when projected onto the substrate; Preferably, the second opening is circular, elliptical, or nearly circular in its orthographic projection onto the substrate; Preferably, the first opening is quadrilateral in its orthographic projection onto the substrate.

16. The display panel according to claim 1, characterized in that, A driving module is disposed within the substrate. The driving module includes a first driving unit for driving the light-emitting sub-pixels and a second driving unit for driving the photosensitive sub-pixels. The first driving unit includes a polysilicon transistor and an oxide transistor, and the second driving unit includes an oxide transistor.

17. The display panel according to claim 1, characterized in that, The photosensitive band of the photoelectric sensing structure and the light-emitting band of the light-emitting structure at least partially overlap; Alternatively, the display panel may further include a light-emitting sub-pixel, which is used to emit light and the photosensitive sub-pixel is used to sense the light. Preferably, the light-emitting sub-pixels include red light-emitting sub-pixels, green light-emitting sub-pixels, and blue light-emitting sub-pixels, and the photoelectric sensing structure is used to sense at least one of red light, green light, and blue light; Preferably, the photosensitive sub-pixel is used to emit infrared light, and the photosensitive sub-pixel is used to sense infrared light.

18. The display panel according to claim 1, characterized in that, At least two of the aforementioned photosensitive subpixels are used to sense light of different wavelengths.

19. A display panel, characterized in that, include: substrate; A light-emitting sub-pixel is disposed on one side of the substrate, and the light-emitting sub-pixel includes a light-emitting structure; A photosensitive sub-pixel is disposed on one side of the substrate. The photosensitive sub-pixel includes a photoelectric sensing structure, and the material of the photoelectric sensing structure includes a donor material and an acceptor material. An electron blocking layer is disposed on the side of the light-emitting structure and the photoelectric sensing structure facing the substrate, and the HOMO energy level of the donor material is lower than or equal to the HOMO energy level of the electron blocking layer.

20. The display panel according to claim 19, characterized in that, The HOMO energy level of the electron blocking layer is higher than or equal to the HOMO energy level of the light-emitting structure.

21. The display panel according to claim 19, characterized in that, The luminescence spectrum characteristics of the light-emitting structure and the photosensitive spectrum characteristics of the photoelectric sensing structure at least partially overlap.

22. The display panel according to claim 19, characterized in that, It also includes a first electrode and a second electrode. The first electrode is provided on the side of the light-emitting structure and the photoelectric sensing structure facing the substrate, and the second electrode is provided on the side of the light-emitting structure and the photoelectric sensing structure away from the substrate. The electron blocking layer is located on the side of the first electrode away from the substrate. Preferably, the light-emitting sub-pixel further includes a hole transport layer located on the side of the light-emitting structure facing the substrate, and the electron blocking layer includes a first portion and a second portion, the first portion being located between the hole transport layer and the light-emitting structure, and the second portion being located between the first electrode and the photoelectric sensing structure; Preferably, the second portion and the first electrode are in contact connection; Preferably, the LUMO energy level of the hole transport layer is lower than the LUMO energy level of the electron blocking layer; Preferably, the HOMO energy level of the hole transport layer is higher than the HOMO energy level of the electron blocking layer; Preferably, the LUMO energy level of the electron blocking layer is higher than the LUMO energy level of the donor material; Preferably, the HOMO energy level of the electron blocking layer is higher than the HOMO energy level of the donor material.

23. The display panel according to claim 22, characterized in that, It also includes a hole blocking layer disposed on the side of the light-emitting structure and the photoelectric sensing structure away from the substrate, and the LUMO energy level of the hole blocking layer is higher than or equal to the LUMO energy level of the acceptor material; Preferably, the LUMO energy level of the hole blocking layer is lower than or equal to the LUMO energy level of the donor material.

24. The display panel according to claim 23, characterized in that, The light-emitting sub-pixel further includes an electron transport layer located on the side of the light-emitting structure opposite to the substrate. The hole blocking layer includes a third portion and a fourth portion. The third portion is located between the electron transport layer and the light-emitting structure, and the second portion is located between the second electrode and the photoelectric sensing structure. Preferably, the fourth portion and the second electrode are in contact connection; Preferably, the LUMO energy level of the electron transport layer is lower than the LUMO energy level of the hole blocking layer; Preferably, the HOMO energy level of the electron transport layer is higher than the HOMO energy level of the hole blocking layer; Preferably, the LUMO energy level of the hole-blocking layer is lower than the LUMO energy level of the acceptor material; Preferably, the HOMO energy level of the hole-blocking layer is lower than the HOMO energy level of the acceptor material.

25. The display panel according to claim 23, characterized in that, The photosensitive sub-pixel also includes an electron extraction layer, which is located between the photoelectric sensing structure and the hole blocking layer; Preferably, the LUMO energy level of the electron extraction layer is higher than the LUMO energy level of the hole blocking layer; Preferably, the HOMO energy level of the electron extraction layer is higher than the HOMO energy level of the hole blocking layer; Preferably, the LUMO energy level of the electron extraction layer is lower than the LUMO energy level of the acceptor material; Preferably, the HOMO energy level of the electron extraction layer is lower than the HOMO energy level of the acceptor material.

26. The display panel according to claim 19, characterized in that, The photosensitive sub-pixel further includes a hole extraction layer, which is located between the electron blocking layer and the photoelectric sensing structure; Preferably, the LUMO energy level of the electron blocking layer is higher than the LUMO energy level of the hole extraction layer; Preferably, the HOMO energy level of the electron blocking layer is higher than the HOMO energy level of the hole extraction layer; Preferably, the LUMO energy level of the hole extraction layer is lower than the LUMO energy level of the donor material; Preferably, the HOMO energy level of the hole extraction layer is higher than the HOMO energy level of the donor material.

27. The display panel according to claim 19, characterized in that, The light-emitting structure includes a host material and a dopant material, wherein the doping ratio of the dopant material in the host material is 0.01%-10%; Preferably, the dopant material in the host material has a doping ratio of 0.1% to 1%.

28. The display panel according to claim 19, characterized in that, The ratio of the donor material to the acceptor material is 20 / 1 to 1 / 20; Preferably, the ratio of the donor material to the acceptor material is 5 / 1 to 1 / 5.

29. The display panel according to claim 19, characterized in that, The receptor material includes fullerene or fullerene derivatives.

30. A display panel, characterized in that, include: substrate; A light-emitting functional layer is disposed on one side of the substrate. The light-emitting functional layer includes a light-emitting structure and a photoelectric sensing structure. The material of the photoelectric sensing structure includes a donor material and an acceptor material. A hole blocking layer is disposed on the side of the light-emitting functional layer facing the substrate, and the HOMO energy level of the hole blocking layer is lower than or equal to the energy level of the acceptor material, and / or the LUMO energy level of the hole blocking layer is lower than or equal to the energy level of the acceptor material.

31. A display module, characterized in that, Includes the display panel as described in any one of claims 1-30.

32. The display module according to claim 31, characterized in that, Also includes: An encapsulation layer is located on the side of the light-emitting structure and the photoelectric sensing structure that is away from the substrate; The second light-shielding layer is located on the side of the encapsulation layer away from the substrate. The light-shielding layer includes a first light-shielding opening and a second light-shielding opening. The first light-shielding opening and the light-emitting structure at least partially overlap in their orthogonal projections on the substrate. The second light-shielding opening and the photoelectric sensing structure at least partially overlap in their orthogonal projections on the substrate. The area of ​​the first light-shielding opening is larger than the area of ​​the second light-shielding opening. Preferably, the light-shielding layer is reused as a touch electrode; Preferably, the first light-shielding opening has a polygonal shape in the orthographic projection of the substrate; Preferably, the first light-shielding opening is quadrilateral in the orthographic projection of the substrate; Preferably, the shape of the second light-shielding opening in the orthographic projection of the substrate is circular, elliptical, or nearly circular.

33. The display module according to claim 32, characterized in that, Also includes: A light adjustment layer is located on the side of the light-shielding layer away from the substrate. The light adjustment layer includes a first adjustment layer, which includes a first adjustment protrusion and a second adjustment protrusion. The orthographic projection of the first adjustment protrusion on the substrate and the orthographic projection of the light-emitting sub-pixel on the substrate at least partially overlap. The orthographic projection of the second adjustment protrusion on the substrate and the orthographic projection of the photoelectric sensing structure on the substrate at least partially overlap. Preferably, the orthographic projections of the plurality of first adjustment protrusions on the substrate and the orthographic projections of the same light-emitting sub-pixel on the substrate at least partially overlap; Preferably, the second adjustment protrusion and the photoelectric sensing structure are arranged in a one-to-one correspondence, and the center of the adjustment protrusion in the orthographic projection of the substrate and the center of the photoelectric sensing structure in the orthographic projection of the substrate overlap. And / or, the adjusting protrusion overlaps at the orthographic projection center of the substrate and the second light-shielding opening at the orthographic projection center of the substrate; Preferably, it further includes a light-protecting layer, which is disposed on the side of the light-adjusting layer opposite to the substrate, and the refractive index of the light-protecting layer is less than the refractive index of the light-adjusting layer; Preferably, the refractive index of the light-adjusting layer is greater than 1.5; Preferably, the refractive index of the light-adjusting layer is greater than 1.55; Preferably, the refractive index of the photoprotective layer is less than 1.5; Preferably, the refractive index of the photoprotective layer is less than 1.

4.

34. A display module, characterized in that, include: substrate; A pixel unit is disposed on the substrate and includes a light-emitting sub-pixel and a photosensitive sub-pixel; A light-filtering section is disposed on the side of the pixel unit facing away from the substrate. The light-filtering section includes a first light-filtering section and a second light-filtering section. The orthographic projection of the first light-emitting sub-pixel on the substrate at least partially overlaps with the orthographic projection of the second light-emitting sub-pixel on the substrate at least partially overlaps with the orthographic projection of the photosensitive sub-pixel on the substrate. The second filter section includes a first sub-unit and a second sub-unit, wherein the light transmission bands of the first sub-unit and the second sub-unit are at least partially different.

35. The display module according to claim 34, characterized in that, The multiple photosensitive sub-pixels have the same photosensitive spectral characteristics, and at least two of the photosensitive sub-pixels are respectively configured to correspond to the first sub-unit and the second sub-unit.

36. The display module according to claim 34, characterized in that, The photosensitive sub-pixel includes a first photosensitive unit and a second photosensitive unit. The orthographic projection of the first sub-unit on the substrate and the orthographic projection of the first photosensitive unit on the substrate at least partially overlap. The orthographic projection of the second sub-unit on the substrate and the orthographic projection of the second photosensitive unit on the substrate at least partially overlap. The first photosensitive unit and the second photosensitive unit have different light-sensitive wavelengths, and the light-transmitting band of the first sub-unit and the light-sensitive band of the first photosensitive unit at least partially overlap. The light-transmitting band of the second sub-unit and the light-sensitive band of the second photosensitive unit at least partially overlap.

37. The display module according to claim 34, characterized in that, The first subunit is used to transmit green light, and the second subunit is used to transmit red light; Preferably, the number of the first sub-units m and the number of the second sub-units n satisfy: m ≥ 2n; Preferably, m ≥ 5n; Preferably, m ≥ 10n; Preferably, the projected area of ​​the first sub-unit on the substrate is less than or equal to the projected area of ​​the second sub-unit on the substrate.

38. The display module according to claim 34, characterized in that, The first subunit is used to transmit red light, and the second subunit is used to transmit infrared light; Preferably, the number of the first sub-units p and the number of the second sub-units q satisfy: p ≤ 2q; Preferably, p≤5q; Preferably, p≤10q; Preferably, the projected area of ​​the first sub-unit on the substrate is less than or equal to the projected area of ​​the second sub-unit on the substrate.