Large-frame continuous imaging system

Abstract

A scanning inspection apparatus detects anomalies on the surface of objects, such as substrates, substrates with bonded chiplets, carriers with singulated chiplets, and the like. In some embodiments, the inspection apparatus includes a time delay integration (TDI) linear sensor having an optical input and a data output wherein more than one optical component is positioned adjacent to each other wherein the optical output is focused on different segments of the TDI linear sensor, and wherein the optical input is positioned to receive a portion of the inspected surface. The apparatus may further include a platform having an upper surface for supporting an object having the surface under inspection and having a motion assembly for moving the platform, and having a controller, the controller is in communication with the motion assembly to move the platform with respect to the optical input of the optical assembly.

Description

Technical Field

[0001] Embodiments of this principle generally relate to semiconductor processing of semiconductor substrates. Background Technology

[0002] Conventional wafer inspection tools are used to inspect the unfilled surfaces of wafers. The fairly uniform surface of the wafer allows for the use of conventional methods for detecting particles and defects. However, the inventors have observed that for filled wafers (wafers with microchips bonded to the surface), conventional wafer inspection tools fail to properly inspect the wafer surface due to the substantially different heights between the wafer surface and the microchip surface. The inventors have also observed that after single-cutting and other processes, the microchips may become misaligned and skewed relative to each other, significantly increasing the difficulty of microchip inspection because the microchips are no longer positioned as intended. Furthermore, the inventors have observed that conventional step-and-repeat sampling inspection processes substantially affect the throughput of the inspection process.

[0003] Therefore, the inventors have provided a testing method and apparatus for rapidly and accurately obtaining testing data regardless of height variations or misalignment. Summary of the Invention

[0004] This article provides methods and equipment for rapid, continuous inspection scanning.

[0005] In some embodiments, an inspection device for detecting anomalies may include: at least one time delay integrated (TDI) linear sensor having a TDI linear sensor length, a TDI linear sensor optical input, and a TDI linear sensor data output; and a plurality of optical components positioned adjacent to each other, wherein each of the plurality of optical components is positioned such that the optical output is focused on a segment of the TDI linear sensor length, and the optical input having an input field-of-view (FOV) is positioned to receive a portion of the surface being inspected.

[0006] In some embodiments, the inspection device may further include: a TDI linear sensor having a length of approximately 80 mm; a platform having an upper surface for supporting an object having an inspected surface and having a motion component configured to move the platform; and a controller communicating with the motion component to move the platform relative to the optical input of the plurality of optical components; the controller moving the platform to adjust the distance between the optical input and the inspected surface; the controller communicating with the motion component, the plurality of optical components, and the TDI linear sensor, and configured to scan the entire surface of a substrate; a substrate having microchips bonded to the substrate; the controller communicating with the motion component, the optical components, and the TDI linear sensor, and configured to scan a carrier having monocut microchips; and an integrated Z-type... A profilometer having a laser-based autofocus module configured to determine the Z-profile of the surface under inspection before acquiring a surface image via the TDI linear sensor, or an external Z-profilometer configured to provide the Z-profile of the surface under inspection before acquiring a surface image via the TDI linear sensor, wherein the external Z-profilometer communicates with the controller; a plurality of optical components having similar focal lengths and FOVs; at least one of the plurality of optical components incorporating epi-illumination or dark-field illumination; and / or at least one of the plurality of optical components having a tunable lens configured to focus the at least one of the plurality of optical components.

[0007] In some embodiments, an inspection device for detecting anomalies may include: at least one time delay integration (TDI) linear sensor having a TDI linear sensor length of approximately 50 mm to approximately 160 mm, a TDI linear sensor optical input, and a TDI linear sensor data output; a plurality of optical components positioned adjacent to each other, wherein each of the plurality of optical components is positioned such that the optical output is focused on a segment of the TDI linear sensor length, and the optical input having an input field of view (FOV) is positioned to receive a portion of the surface being inspected; a platform having an upper surface for supporting an object having the surface being inspected and having a 4-axis motion assembly configured to move the platform; and a controller communicating with the 4-axis motion assembly, the plurality of optical components, and the TDI linear sensor, and configured to scan the entire surface of a substrate or carrier.

[0008] In some embodiments, the inspection device further includes: a substrate having a small chip bonded to the substrate; a plurality of optical components having similar focal points and FOVs; at least one of the plurality of optical components being combined with incident illumination or dark field illumination; at least one of the plurality of optical components having a tunable lens configured to focus the at least one of the plurality of optical components; and / or an integrated Z-profilometer having a laser-based autofocus module configured to determine the Z-profilometer of the surface under inspection before acquiring a surface image via the TDI linear sensor, or an external Z-profilometer configured to provide the Z-profilometer of the surface under inspection before acquiring a surface image via the TDI linear sensor, wherein the external Z-profilometer communicates with the controller.

[0009] In some embodiments, a method for obtaining inspection data may include scanning a surface of a substrate or carrier using a plurality of optical components positioned adjacent to each other; receiving image data from the surface into the plurality of optical components, the image data being focused onto a single time delay integration (TDI) linear sensor, wherein each optical component focuses the image data onto a different portion of the TDI linear sensor; reconstructing the image data from the TDI linear sensor to form reconstructed image data and mapping the reconstructed image data onto a position on the surface; analyzing the reconstructed image data and position data to determine the location of anomalies and forming a defect map of the surface; and forming inferences based on the defect map and performing corrective actions based on these inferences.

[0010] In some embodiments, the method may further include: a correction action that includes marking chiplets as defective and removing them from the bonding machine selection pool; and / or a correction action that includes enhancing the pre-bonding process to mitigate future anomalies.

[0011] Other and further embodiments are disclosed below. Attached Figure Description

[0012] The embodiments of the principle briefly outlined above and discussed in more detail below can be understood by referring to the exemplary embodiments depicted in the accompanying drawings. However, the drawings illustrate only typical embodiments of the principle and should therefore not be considered as limiting the scope, as other equally effective embodiments are permissible.

[0013] Figure 1 Top and cross-sectional views of various types of substrates according to some embodiments of this principle are depicted.

[0014] Figure 2 An operational continuous image detection array for a time delay integration (TDI) linear sensor, according to some embodiments of this principle, is depicted.

[0015] Figure 3 A cross-sectional view of an inspection system according to some embodiments of this principle is depicted.

[0016] Figure 4 A top view depicting the scanning mode of an inspection system according to some embodiments of this principle is shown.

[0017] Figure 5 A cross-sectional view of an inspection system according to some embodiments of this principle is depicted.

[0018] Figure 6 A cross-sectional view of an inspection system with an internal laser-based Z-profilometer, according to some embodiments of this principle, is depicted.

[0019] Figure 7 A top view of an external Z-prototype apparatus according to some embodiments of this principle is depicted.

[0020] Figure 8 A cross-sectional view of an inspection system with dark field illumination according to some embodiments of this principle is depicted.

[0021] Figure 9 A cross-sectional view of an inspection system according to some embodiments of this principle.

[0022] Figure 10 This describes a method for obtaining test data based on some embodiments of this principle.

[0023] Figure 11 A schematic diagram of a hybrid combination system according to some embodiments of this principle is depicted.

[0024] Figure 12 A cross-sectional view of an inspection system with dark field illumination according to some embodiments of this principle is depicted.

[0025] Figure 13 A cross-sectional view of an inspection system with a single optical input and a beam splitting output, according to some embodiments of this principle, is depicted.

[0026] To facilitate understanding, the same element symbols have been used to represent common elements across the figures where possible. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further elaboration. Detailed Implementation

[0027] Methods and apparatus provide inspection scanning of wafers and / or chiplets, allowing for rapid, continuous scanning of (e.g.) bonded or unbonded wafers and single-cut chiplets to minimize throughput impact from inspection processes. The techniques disclosed herein are particularly advantageous as high-speed, large-frame continuous imaging inspection systems capable of detecting defects and particles in the context of chip-to-wafer hybrid bonding and other inspection scenarios. This inspection system advantageously provides full wafer coverage and addresses a range of challenges unique to (e.g.) hybrid bonding processes and misaligned chiplets. Chip-to-wafer hybrid bonding requires defect inspection of three distinct sample types: flat-substrate wafers, single-cut chiplets, and bonded chiplets on a substrate wafer. Chip height variations and misalignments pose challenges for rapid measurements, challenges not present in standard flat-substrate wafers. To overcome these challenges, the inspection system of this principle possesses unique capabilities not found in conventional optical inspection tools. The inspection system of this principle is also suitable for applications such as large display panel inspection.

[0028] Hybrid bonding is a packaging and chip stacking technology in which individually diced chiplets are precisely fused to a larger substrate wafer or bonding wafer. Metal interconnects embedded in the dielectric of both the chiplet and the substrate bond with the dielectric material, forming a "hybrid bond." Upon initial contact, the dielectric layers of the chiplet and the substrate bond together almost instantaneously and weakly. Subsequent high-temperature annealing steps are then performed to fuse the metal interconnects and strengthen the dielectric layer bond strength. The presence of items such as particles, chips, cracks, or excessive morphological variations on the chiplet / substrate surface can adversely affect bonding quality and cause post-bonding defects. Post-bonding defects typically manifest as air gaps or voids of various sizes, which hinder proper interconnect formation, adversely affect yield, and lead to high cost losses of the fully manufactured chiplet / substrate die. These losses are particularly severe in applications where a single substrate die may support multiple chips (e.g., stacked side-by-side on a substrate or layered on top of each other).

[0029] If the inspection system is to be used for, for example, these bonding applications, the inspection system must have the capability to scan completely unbonded wafers (i.e., bonding substrates to which chiplets can be bonded), single-cut (likely misaligned) and unbonded chiplets on carriers, and bonded chiplets on bonding substrates. Figure 1 In view 100A, a bonding substrate 102 is depicted. The bonding substrate 102 may include a surface or subsurface redistribution layer (RDL) or other circuitry that can interface with a chiplet bonded to the bonding substrate 102. The upper surface 120 of the bonding substrate 102 is typically a uniform, flat surface. Figure 1View 100B depicts a carrier 106 (such as, but not limited to, a frame, etc.) holding a chiplet or die 104. The die 104 has been diced (separated) and adhered to the carrier 106 to allow a bonding machine to pick up the die 104 and place it on the bonding substrate 102 during the bonding process. Although the carrier 106 sufficiently holds the die 104 for processing, the die 104 is not always positioned in an aligned manner due to the dicing process (which disrupts the alignment defined by photolithography) and due to the flexibility of the carrier 106.

[0030] Therefore, some of the grains 104 may be skewed 108 or deviate from column or row alignment 110. When the carrier 106 flexes, the top surface 122 of the grains 104 will also change in height relative to each other. Figure 1 View 100C depicts a bonding substrate 102 in which a die 104 is bonded to the upper surface 120 of the bonding substrate 102. The top surface 122 of the die 104 and the upper surface 120 of the bonding substrate 102 exhibit a substantial height difference that must be overcome when scanning the bonded wafer. Figure 1 In the cross-sectional view 100D, the top example shows a bonding substrate 102 in which die 104 is bonded to the upper surface 120 and a smaller die 112 is bonded to the upper surface 120. In the bottom example, an additional die 114 is bonded to die 104, which further increases the height difference between the upper surface 120 and the surface of the smaller die 112. As used herein, the terms “chiplet” and “die” are used interchangeably and represent a semiconductor circuit system that can be diced and then bonded to a wafer or substrate. In some cases, a die may contain more than one chiplet or only one chiplet.

[0031] The inventors have observed that the standard method utilizes a step-and-repeat acquisition scheme, in which the optical system moves to a target location, automatically focuses, acquires an image, and then moves to a new location. However, when the number of target locations approaches several thousand (such as in advanced semiconductors), the step-and-repeat method becomes too slow. The inventors have discovered that rectangular strips of image data can be continuously acquired using a time-delay integral (TDI) linear sensor without stopping at each individual image location. However, the inventors have further discovered that addressing single-cut dies and bonded wafers via a TDI linear sensor presents significant challenges due to the lack of microscopic resolution and field-of-view (FOV) optics compatible with large-format TDI linear sensors. The inventors have found that these challenges can be overcome using a multi-head, multi-illumination optical inspection system combined with a large-format TDI linear sensor (multiple optical heads provide the necessary microscopic resolution through a combined FOV compatible with a large-format TDI linear sensor to achieve fast scanning speeds), achieving an ideal combination of processing power, magnification, and sensitivity required for pre- and post-bonding inspection. In addition, the use of multiple optical heads allows for cost-effective inspection systems (single optical solutions with microscopic resolution and extremely large FOV are too expensive and fragile) that offer the flexibility to individually control each of the optical heads to scan at different resolutions, focal heights, and fields of view.

[0032] In this invention, a large-format TDI linear sensor is used to enable the use of multiple optical components for a single sensor. Figure 2 The diagram depicts the operation of a TDI linear sensor 200. The TDI linear sensor has a length M 204 and a width N 206. The number of pixels 216 along the length M 204 (X-axis 210) corresponds to the available lateral field of view along an object (e.g., a grain surface, a wafer surface, etc.). The number of pixels along the width N 206 corresponds to the number of stages (1 to N) within the TDI linear sensor. A sample is moved 212 along the Y-axis 208 via stages (1 to N), and the sample is imaged N times by the sensor, increasing the number of photons collected for a given sample and improving the SNR (signal-to-noise ratio) without requiring sample stuttering (continuous imaging). In some embodiments, the length M 204 may have a length 214 of approximately 10 mm to approximately 160 mm or greater.

[0033] exist Figure 3The inspection system 300 is described using a TDI linear sensor 302, multiple optical components 304, a stage 338, a motion component 324, and a controller 330. The motion component 324 moves the sample on the stage 338 along multiple axes to ensure complete inspection scanning of the sample. In some embodiments, the motion component is a 4-axis stage (i.e., X, Y, Z, and Theta motion). The motion component 324 can position the optical heads 352 of the optical components 304 at any location on the substrate 300 being tested. Stage movement, sensor acquisition, and illumination are coordinated via a combination of software commands / queries and / or digital trigger signals in the controller 330, designed to facilitate tighter timing and synchronization between the inspected item and the scanning system. Each optical head 352 may also include an independent Z-positioner (e.g., motor-based, piezoelectric, etc.). The TDI linear sensor 302 may have a length 354 of approximately 10 mm to approximately 160 mm. In some embodiments, a non-TDI linear sensor may be used to replace the TDI linear sensor 302. If a non-TDI linear sensor is used instead of the TDI linear sensor 302, special care must be taken to ensure a good signal-to-noise ratio for the test measurement (e.g., using a brighter light source, more efficient optics, and / or a more sensitive image detector, etc. in the sensor, etc.).

[0034] Larger TDI linear sensors enable continuous imaging of a wider field of view, thereby increasing throughput. However, the inventors have discovered two distinct challenges with using larger sensor lengths. First, there is a lack of available optics that can balance the magnification, numerical aperture (i.e., resolution), and FOV required for inspection systems used in combined applications. Existing lenses specifically designed for large-format TDI sensors can provide the required magnification (e.g., about 5x), but suffer from extremely low resolution (e.g., NA = 0.01). Alternatively, microscope objectives offer magnification (e.g., 5 to 10x) and resolution (e.g., NA = 0.15 to 0.30), but typically cannot support sensor sizes larger than 30 mm. Second, when imaging a wider FOV onto diced grains and bonded substrates, multiple small dies may be in the field of view simultaneously. These dies may each have different focal planes, and a single lens cannot focus all dies in the field of view simultaneously. Re-acquiring data from multiple focal planes through rescanning results in a significant reduction in throughput. The inventors have discovered that high throughput can be achieved by using a large-format TDI linear sensor having multiple, tightly packaged optical components 304 (which consist of a high-magnification, high-resolution microscope body). The microscope body of the optical components 304 is oriented along the long dimension of the TDI linear sensor. Each optical component 304 contains an illumination system (e.g., inside or outside the optical component 304), which is discussed in detail below. In some embodiments, the optical components 304 also contain a Z-positioner (e.g., based on a motor, piezoelectric element, liquid lens, or motorized lens unit, etc.) to compensate for different height ranges of features on the sample being examined.

[0035] like Figure 3 As depicted, the optical assembly 304 of the inspection system 300 has a sample FOV 316, which is adjusted to have an FOV width 320 on the sample, which in some embodiments is approximately 1 mm to approximately 5 mm. The Z-distance 318 between the optical head 352 and the sample surface can be adjusted as needed by the motion assembly 324 and the controller 330 (e.g., maintaining the Z-distance 318 within the focusing range of the optical assembly 304, clearing the maximum Z-height on the wafer, etc.). In some embodiments, the optical assembly 304 may have a width 310 of approximately 30 mm to 80 mm. The width 310 is typically specified by the internal space required to accommodate internal optical components and optional internal light sources, etc. Any number of optical assemblies from 2 to N (312) can be used. In some embodiments, the spacing 314 between the optical assemblies may be from approximately 1 mm to approximately 20 mm. Closer spacing of the optical assemblies allows for more assemblies per TDI linear sensor, but the spacing should be sufficient to avoid vibration or other operational problems (the optical assemblies should not contact each other during operation).

[0036] Optical component 304 transmits an image of a portion of the sample surface via optical component 304 and transmits it to M pixels of TDI linear sensor 302 via focused TDIFOV 306 (see [link]). Figure 2 On a portion of the TDI linear sensor 302. In some embodiments, depending on the magnification capability of the optical component 304, the width 308 of this portion of the TDI linear sensor 302 may be from approximately 5 mm to approximately 30 mm. The sample surface may be at different Z heights (e.g., chiplet 326, shorter chiplet 328, no chiplet, etc.) and different focal planes or adjustments may be required for the Z axis of the stage 338. In some embodiments, each optical head 352 is mapped along the length of the TDI linear sensor (i.e., across...). Figure 2 The M pixels shown are located at different positions on the sample, where each optical component is independently focused on the sample using its own independent illumination / focusing system.

[0037] exist Figure 5 An example of an embodiment of optical assembly 304 is depicted. Optical head 510 has optics 516 that assist in guiding the sample FOV to the sample surface to obtain image data 508. In some embodiments, the optical assembly has incident illumination capability. The sample surface is internally illuminated by light source 502, which generates an illumination beam 504 that is reflected by lens 506 to impact the sample surface. As the sample moves below the inspection system 500, Z-position assembly 512 is used to make high-speed changes to allow the sample FOV to be focused on the sample surface. In some embodiments, the Z-position assembly may use a motor to move the assembly, may use an electrically tunable lens or piezoelectric element, etc. Image data 508 passes over the optical assembly to a focusing lens 514 and then to a portion of M pixels on the TDI linear sensor 302.

[0038] Return to reference Figure 3The controller 330 can provide complete control over the movement of the stage 338 via the motion component 324. The controller 330 can also communicate with the optical component 304 to facilitate adjustments to illumination, focus, and other optical component parameters, etc. The controller 330 can also receive raw image data from the TDI linear sensor 302 and / or provide control over the TDI linear image sensor 302 as needed. The controller 330 can directly control the inspection system 300, or control a computer (or controller) associated with the inspection system 300. In operation, the controller 330 enables data collection and feedback from the inspection system 300 to optimize the performance of the inspection system 300 and control the processing flow according to the methods described herein. The controller 330 generally includes a central processing unit (CPU) 332, a memory 334, and support circuitry 336. The CPU 332 can be any form of general-purpose computer processor suitable for industrial environments. The support circuitry 336 is conventionally coupled to the CPU 332 and may include cache, clock circuitry, input / output subsystems, power supplies, etc. Common software programs (such as those described herein) may be stored in memory 334, which, when executed by CPU 332, transforms CPU 332 into a dedicated computer (controller 330). Common software programs may also be stored and / or executed by a second controller (not shown) located remotely from the inspection system 300.

[0039] Memory 334 is in the form of a computer-readable storage medium containing instructions that, when executed by CPU 332, facilitate the operation of semiconductor processes and devices. The instructions in memory 334 are in the form of a program product, such as a program that implements the methods of this principle. The program code may conform to any of many different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program product defines the functionality of aspects, including the methods described herein. Exemplary computer-readable storage media include, but are not limited to: non-writable storage media that permanently store information (e.g., read-only memory elements within a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and writable storage media that store changeable information (e.g., floppy disks within a floppy disk drive, or hard disk drives, or any type of solid-state random access semiconductor memory). Such a computer-readable storage medium is an aspect of this principle when carrying computer-readable instructions that direct the functionality of the methods described herein.

[0040] The inspection system 300 enables a high-speed, large-format continuous imaging inspection system capable of handling... Figure 1The various sample types depicted herein. In some embodiments, the inspection system 300 comprises a plurality of independently configured optical components, each mapped to a different portion of a single TDI linear sensor. Each optical component 304 may also be independently focused onto a corresponding portion of the sample (e.g., wafer surface, chiplet surface, etc.). Because the optical components can be configured independently, the inspection system 300 is highly flexible. For example, if high throughput is required, each optical component 304 may be identical and configured to image different portions of the sample (e.g., different chiplets, different surfaces, etc.). With identically configured optical components, a larger area of ​​the sample can be measured simultaneously, thereby reducing the total time required to perform any individual measurement. If multi-depth inspection information is required, each optical component 304 may be configured to map different types of samples at different depths (e.g., optical component 1 maps chiplet type 1 at height 1, and optical component 2 maps substrate at height 2, etc.).

[0041] In some embodiments, the inspection system 1304 may have one or more optical components 304, wherein a single optical element 1302 is focused on the substrate 322, such as Figure 13As depicted in view 1300. A sample FOV 316 provides an image of substrate 322 on a single optics 1302. The image of substrate 322 from the single optics 1302 is then split (1308) into multiple output FOVs 1306 generated by one or more optical components 304 over different regions of the TDI linear sensor 302. This splitting of the image from the single optics 1302 allows a single input FOV to be combined with a variable number (1310) of output FOVs 1306 focused at different locations on the TDI linear sensor 302. In some embodiments, the output FOVs 1306 may be split as a function of wavelength and / or polarization and / or based on a portion of the image from the input FOV (e.g., 50% into path 11312, 25% into path 21314, 25% into path N1316, etc.). In some embodiments, one or more optical components 304 of the inspection system 1304 include a plurality of optical components 1 to N 304A (including optical components 1 304B, 2 304C, N 304D, etc.), wherein each optical component 1 to N 304A receives a path (path 1 1312, path 2 1314, path N 1316, etc.) of a split FOV from a single optical element 1302, and each optical component 1 to N 304A provides one of a plurality of output FOVs 1306 that impact different locations on the TDI linear sensor 302. In some embodiments, one or more optical components 304 of the inspection system 1304 are a single optical component 304E that receives an image from the single optical element 1302 and splits the output of the single optical component 304E into a plurality of output FOVs 1306.

[0042] Return to reference Figure 3 If multiple magnifications are required, each optical component 304 can be configured to have different magnifications for individual applications (e.g., optical component 1 has a 50x magnification to find minute defects, and optical component 2 has a 1x magnification to find large cracks and severe misalignments, etc.). As discussed in more detail below, if multiple types of illumination are required, each optical component 304 can be configured to have different types of illumination to meet different types of applications. For example, optical component 1 can be standard incident illumination to find cracks, optical component 2 can be dark field illumination to increase sensitivity to particles, and / or optical component 3 can be configured with Nomarski DIC arms or asymmetric illumination to improve sensitivity to changes in morphology across samples, etc. The optical components can use any wavelength, as long as the spectral range is detectable by the TDI linear sensor 302. Furthermore, the inspection system 300 can also be configured with any combination of variations (e.g., high throughput, multiple depths, multiple magnifications, multiple illumination types, etc.).

[0043] In one example use case, for a larger TDI linear sensor with a length of approximately 160 mm, at least three optical components can be placed adjacent to each other, thereby increasing the throughput by a corresponding factor. As a simplified example, but not intended to be limiting, the FOV of each optical component can be equal to the field number (FN) of the microscope objective divided by the magnification of the microscope objective. Therefore, a standard 5x microscope objective (FN=25) supports an FOV of 25 / 5X = 5 mm at the objective. The three optical components then extend approximately 15 mm into and out of the sample area and 75 mm into the sensor area. Figure 4 In view 400, the acquisition pattern of the multi-head inspection system is depicted based on this example use case. As the substrate moves along the Y direction 402, each optical component 304 scans across a first slit 408 with a distinct rectangular shape on the substrate 322. Because the inspection system has three optical components 304, three slits are formed on the substrate 322 each time it passes through, thereby increasing throughput. After acquiring the first slit 408, the substrate 322 moves along the width of the slit in the X direction 406 and acquires a second slit 410 directly adjacent to the first slit 408. After completing the second slit 410, the substrate 322 moves along the width of the slit in the X direction 406 and acquires a third slit 412 directly adjacent to the second slit 4120. This process is repeated until the entire sample has been acquired. Because this inspection system combines multiple optical components using only a single TDI linear sensor, it is more cost-effective than systems using multiple TDI linear sensors (each of which is adjacent to each other and has its own optical system). Multiple TDI linear sensors also require additional synchronization between the sensors, which is not necessary in the method and apparatus of this principle, which uses only a single TDI linear sensor.

[0044] In some embodiments, it is necessary to inspect the independent focusing of each individual optical component of the system. In these cases, each optical component can be focused at an appropriate Z-plane to allow for the acquisition of a focused image. Image analysis-based passive autofocus methods are too slow for TDI-based inspection systems in which the sample moves continuously. The inventors have discovered that using an independent Z-profilometer or Z-profilometer array to provide a Z-height map of the sample allows for rapid adjustment of the Z-positioner of each optical component during sample image acquisition. The inventors have also discovered that with a separate and independent Z-positioner on each optical component, two operating modes (high throughput mode and multi-depth mode) can be achieved. In the previous embodiment, the acquisition speed can be improved by simultaneously measuring multiple chips of different thicknesses by the inspection system. Alternatively, each optical component can be focused at different depths within the sample onto completely different sample targets (e.g., the first optical component focuses on the bonded chip at depth Z1, while the second optical component focuses on the substrate at depth Z2).

[0045] The Z-height information used for focusing each optical component can come from internal or external sources (e.g., integrated equipment in the inspection system, or a separate device that provides Z-profile input to the inspection system, etc.). The Z-height of the sample should be measured and relayed to the optical component before acquiring an image of that location on the sample. Figure 6 In view 600A, an example of an integrated focusing assembly based on a laser autofocusing assembly 602 is depicted. The laser autofocusing assembly 602 generates a laser beam 604A that passes over an optical assembly and impacts a sample (e.g., a small chip 326, etc.). The laser beam 604A reflects off the sample surface, and the reflected laser beam 604B travels back to the laser autofocusing assembly 602. The laser autofocusing assembly 602 uses the timing of the laser beam 604A and the reflected laser beam 604B to construct the Z-profile (Z-height) of the sample surface that will subsequently be sampled.

[0046] As in Figure 6 Depicted in the enlarged top view 600B (enclosed by a dashed circle), as the sample moves in the Y direction 608, the laser autofocusing assembly 602 focuses the laser beam 604A onto a spot 606 on the sample, which is positioned in front of the image data 508 acquired by the system to be inspected. After the laser autofocusing assembly 602 has acquired Z-height information and delay information (time-series data indicating the measurement position during the scan), the sample passes under the TDI linear sensor footprint, allowing the height measurement position to be synchronized with the TDI linear sensor footprint and the image acquisition position. Figure 7In view 700, an external Z-profilometer assembly 704 is depicted. In some embodiments, the external Z-profilometer assembly 704 may be a laser-based Z-profilometer, etc. The external Z-profilometer assembly 704 may be positioned close to the inspection system 706, such as inside or outside the inspection chamber. The external Z-profilometer assembly 704 may use one or more lasers 702 to scan the substrate 102 to obtain the height of the grain 104, etc. Before image scanning by the inspection system 706, the Z-profilometer (height profile) of the entire substrate or carrier, etc., may then be transmitted to the inspection system 706. Before image acquisition by the optical components, the inspection system 706 may then use the Z-profilometer of the substrate to adjust the focus of each of the optical components.

[0047] Sample illumination is primarily achieved using a light source in the ultraviolet (UV) / visible / near infrared (NIR) wavelength range. The wavelength is largely controlled by the capabilities of the TDI linear sensor. Other wavelengths can be used where compatible with the TDI linear sensor used in the inspection system is available. Silicon-based TDI linear sensors offer superior sensitivity from approximately 300 nm to approximately 1100 nm wavelengths. In some embodiments, each optical component has an illumination source. The illumination source can operate under one of two illumination schemes. Return to Reference Figure 5 Optical component 304 uses incident illumination in the first mode. Incident illumination occurs when the sample is illuminated via optical head 510. The illumination angle is aligned with the optical axis of optical head 510. A range of incident illumination schemes are available to enhance contrast at the sample plane. For example, asymmetric pupil illumination or Nomarski differential interference contrast (DIC) illumination can enhance morphological changes at the sample plane. Variations of incident illumination include asymmetric illumination, where a planar intensity field is not used in image pupil, polarized light, or differential contrast imaging.

[0048] The second mode of illumination is oblique incidence or dark field illumination. Dark field illumination occurs when the sample is illuminated at an angle outside the collection aperture of the optical head 510. Dark field illumination is particularly sensitive to particles on the surface of small chips / substrates and is also sensitive to large height variations, which can cause noticeable artifacts near the edges of the sample. The inventors have discovered that the dark field illumination problem can be mitigated for cases with gradual height profile changes when performing top edge inspection using dual-sided dark field illumination, such as... Figure 8As depicted in view 800A. In some embodiments, dark-field illumination is provided by a first external light source 802A and a second external light source 802B. Dark-field illumination is sensitive to rapid height changes caused by the edges of the chip 326. The first external light source 802A is used to illuminate the left side 326A of the chip 326, and the second external light source 802B is used to illuminate the right side 326B of the chip 326. In the unfolded view 800B, the corner defect 808 exhibits better contrast and detail when light is incident from the left 806 than when light is incident from the right 804, resulting in blurring and reduced detail. The inventors have also discovered that the dark-field illumination problem can be mitigated for cases with rapid, large height contour changes when using dual-sided dark-field illumination for sidewall or lower edge inspection, such as... Figure 12 The image is depicted in view 1200A. In some embodiments, dark-field illumination is provided by a first external light source 1202A and a second external light source 1202B. The first external light source 1202A illuminates the right side 326B of the chip 326, and the second external light source 1202B illuminates the left side 326A of the chip 326. In the unfolded view 1200B, the lower edge defect 1208 exhibits better contrast and detail when light is incident from the right 1204 than when light is incident from the left 1206, resulting in a shadow on the right side of the chip 326 when light is incident from the left 1206.

[0049] In some embodiments, the optical components used in the inspection system may have equivalent or different illumination types / systems. For example, in some embodiments, an inspection system with a large-format TDI linear sensor may have four optical components. The first optical component may have a dark-field illumination system with or without different wavelengths for better particle detection; the second and third optical components may have incident illumination with or without different wavelengths to enhance crack or chip inspection; and the fourth optical component may have a high-magnification Nomarski DIC illumination system for morphology inspection. Multiple illumination types in the inspection system can address different use cases for defect inspection without requiring multiple designs of optical components or multiple inspection chambers in the tool, thereby significantly reducing costs and increasing the flexibility of the inspection system.

[0050] Figure 9An inspection system 900 is described, comprising a controller 330 communicating with a motion component 324 having a stage 338, a plurality of optical components 304, a TDI linear sensor 302, and an inspection data processor 902 having an inspection data model 904 (optionally). In some embodiments, the inspection data processor 902 may reside wholly or partially within the controller 330 and / or the controller 330 may reside wholly or partially within the inspection data processor 902. Image data processing generally comprises three stages—reconstruction, analysis, and inference (machine learning). The reconstruction stage involves inputting raw data (in this case, a pixel stream output from the TDI linear sensor 302) directly and / or via the controller 330 into the inspection data processor 902. The inspection data processor 902 maps each pixel to its correct position in the wafer coordinate space (X, Y, Z). In some embodiments, calibration may be performed during system setup for each optical component and real-time information from the stage 338, motion component 324, and Z-positioner, etc., for each optical component.

[0051] The analysis phase performed by the inspection data processor 902 involves extracting information from the reconstructed image. In some embodiments, areas on the wafer / chiplet that may have a high probability of defect, etc., can be labeled. The analysis can be performed by segmenting the region of interest (e.g., chiplet) via a series of standard image matching techniques and performing a comparison with a reference die to highlight deviations. For example, particles on a dielectric surface may appear as particularly bright pixels under dark illumination. Once defective areas are highlighted, these areas can be further classified into their own subcategories (e.g., particles, cracks, chips, etc.). Defect maps can then be generated across samples.

[0052] The inference phase performed by the inspection data processor 902 references a variety of ways that defect maps can affect (e.g., but not limited to) the operation of the hybrid bonding tool. For example, cracks or scratches found on a chiplet or substrate can be used to mark dies as defective and remove them from the bonding machine's selection pool. Individual particles can lead to additional pre-processing steps, or the systematic presence of particles in a specific region of the wafer can be used to tune pre-processing steps for future batches (e.g., performing additional pre-cleaning rinses before bonding, etc.). For example, excessive surface topography changes can trigger changes to pre-grinding steps prior to bonding. In these ways, defect maps provide a broad measure of various aspects of tool functionality and can be used to reduce variability between runs, provide machine learning for long-term process tuning, and reduce tool maintenance and repair time. Defect degree data can also be used for sorting processes and / or for identifying the extent of defective dies, etc.

[0053] In some examples, the inspection data model 904 can be used to assist in providing inferences. The inspection data model 904 may be based on historical data and / or real-time data obtained from ongoing inspection processes. The inspection data model 904 can be continuously updated (directly or indirectly via the inspection data processor 902) through feedback from the post-bonding process 906. Feedback information may include annealing information, gap filling information, and / or chemical mechanical polishing (CMP) information, etc., related to the post-bonding process 906 or the bonding process. The inspection data model 904 can also be used, directly and / or indirectly via the inspection data processor, to assist in providing inferences for the pre-bonding process 908 (such as pre-cleaning processes, CMP processes, chiplet dicing processes, and similar processes, as discussed above) and the bonding process (e.g., hybrid bonding processes, etc.).

[0054] exist Figure 10 In some embodiments (but not limited to), method 1000 for obtaining inspection data may be performed before or after the bonding process. In block 1002, a plurality of optical components positioned adjacent to each other scan the surface of a substrate or carrier. The use of multiple optical components can be used to increase throughput. The optical components may have equivalent or different configuration parameters, such as, but not limited to, magnification, illumination mode, and focal plane, as described herein. In some embodiments, the optical components may have an internal light source operating in an incident illumination mode. In some embodiments, the optical components may have an external light source operating in a dark field illumination mode. Contrast enhancement may also be used. In block 1004, image data from the surface is received into the plurality of optical components, which is then focused onto a single TDI linear sensor. Each optical component focuses individual image data onto a different portion of the TDI linear sensor. In some embodiments, three or more optical components may be used. In some embodiments, each of these optical components may have a surface FOV of approximately 1 mm to approximately 5 mm. In some embodiments, the optical components may have a magnification of approximately 5x to approximately 50x. In some embodiments, the TDI linear sensor may have an M length of approximately 10 mm to approximately 160 mm. In some embodiments, each optical component may provide the FOV of the surface image to a portion of the TDI linear sensor ranging from approximately 10 mm to approximately 30 mm.

[0055] In box 1006, image data from the TDI linear sensor is reconstructed and mapped to positions on the surface. In box 1008, the reconstructed image data and position data are used to determine the locations of anomalies and form a defect map of the surface. In box 1010, inferences are formed based on the defect map, and corrective actions are performed based on these inferences. In some embodiments, an inspection model (e.g., see...) can be used. Figure 9This can be used to assist in establishing inferences, etc. In some embodiments, corrective actions may include marking chiplets as defective and removing them from the bonding machine selection pool. In some embodiments, corrective actions may include enhancing pre-bonding, bonding, or post-bonding processes to mitigate anomalies. For example, additional pre-cleaning may be performed before bonding to remove extra particles, bonding pressure that scratches chiplets may be reduced during the bonding process to reduce chiplet cracking, and / or additional gap-filling material may be used after bonding to ensure coverage of different chiplet heights, etc.

[0056] Return to reference Figure 9 The inspection system 900 can be incorporated into or independent of various hardware architectures. In some embodiments, the inspection system 900 can be a stand-alone inspection station and / or can be integrated into hybrid tools (such as...). Figure 11 In integrated hybrid tools. For example, in Figure 11 The present invention depicts a schematic top view of an integrated hybrid bonding tool 1100 for bonding dies / chiplets to a target (bonding substrate) according to at least some embodiments. The methods described above and below can be performed within the integrated hybrid bonding tool 1100 to enhance hybrid bonding and / or enhance pre-bonding or post-bonding processes. The integrated hybrid bonding tool 1100 typically includes an equipment front end module (EFEM) 1102 and a plurality of automation modules 1110 serially coupled to the EFEM 1102. The plurality of automation modules 1110 are configured to shuttle one or more types of substrates from the EFEM 1102 through the integrated hybrid bonding tool 1100 and perform one or more processing steps on the one or more types of substrates (e.g., a source having chiplets, a source having mono-cut chiplets, a target or bonding substrate for bonding chiplets, a bonding substrate having previously bonded chiplets, etc.). Each of the multiple automation modules 1110 typically includes a transfer chamber 1116 and one or more process chambers 1106 coupled to the transfer chamber 1116 to perform one or more processes. The multiple automation modules 1110 are coupled to each other via their respective transfer chambers 1116 to provide modular expansion and customization of the integrated hybrid tool 1100. For example... Figure 11 As described, the plurality of automation modules 1110 include three automation modules, wherein the first automation module 1110a is coupled to EFEM 1102, the second automation module 1110b is coupled to the first automation module 1110a, and the third automation module 1110c is coupled to the second automation module 1110b.

[0057] EFEM 1102 includes a plurality of loading ports 1114 for receiving one or more types of substrates. In some embodiments, the one or more types of substrates include 200 mm wafers, 300 mm wafers, 450 mm wafers, framed substrates, carrier substrates with or without reconstructed chips / chips, silicon substrates, glass substrates, etc. In some embodiments, the plurality of loading ports 1114 includes at least one of one or more first loading ports 1114a for receiving a first type of substrate 1112a or one or more second loading ports 1114b for receiving a second type of substrate 1112b. In some embodiments, the first type of substrate 1112a has a different size than the second type of substrate 1112b. In some embodiments, the second type of substrate 1112b includes a framed substrate or a carrier substrate. In some embodiments, the second type of substrate 1112b includes a plurality of chips / chips disposed on a framed or carrier substrate. In some embodiments, the second type of substrate 1112b can hold chips / chips of different types and sizes. Thus, one or more second loading ports 1114b may have different sizes or receiving surfaces, configured to load substrates 1112b of a second type with different sizes. In some embodiments, the plurality of loading ports 1114 are arranged along a common side of EFEM 1102. Although Figure 11 A pair of first load ports 1114a and a pair of second load ports 1114b are depicted, but EFEM 1102 may include other combinations of load ports, such as one first load port 1114a and three second load ports 1114b. Additionally, the integrated hybrid bonding tool 1100 may incorporate a buffer 1190, which provides temporary storage or buffering for sources and targets, etc. The buffer 1190 is designed to allow different sizes / types of dies / chiplets to comply with timing and other factors and / or constraints by making the target and / or source readily available for processing without external extraction.

[0058] In some embodiments, EFEM 1102 includes a scanning station 1108 having substrate ID readers for scanning one or more types of substrates to identify information. In some embodiments, the substrate ID readers include barcode readers or optical character recognition (OCR) readers. An integrated hybrid bonding tool 1100 is configured to use any identification information from one or more types of substrates scanned to determine processing based on the identification information, such as different processes and / or placements for a first-type substrate 1112a and a second-type substrate 1112b. In some embodiments, scanning station 1108 may also be configured for rotary movement to align the first-type substrate 1112a or the second-type substrate 1112b. In some embodiments, one or more of a plurality of automation modules 1110 include scanning station 1108. An EFEM robot 1104 is housed in EFEM 1102 and configured to transport the first-type substrate 1112a and the second-type substrate 1112b to scanning station 1108 between a plurality of loading ports 1114. The EFEM robot 1104 may include a substrate end effector for handling a first type of substrate 1112a and a second end effector for handling a second type of substrate 1112b. The EFEM robot 1104 may rotate, or rotate and move linearly.

[0059] The transfer chamber 1116 includes a buffer 1120 configured to hold one or more first-type substrates 1112a. In some embodiments, the buffer 1120 is configured to hold one or more of the first-type substrates 1112a and one or more of the second-type substrates 1112b. The transfer chamber 1116 includes a transfer robot 1126 configured to transfer the first-type substrates 1112a and the second-type substrates 1112b between the buffer 1120, one or more process chambers 1106, and buffers disposed in adjacent automation modules of a plurality of automation modules 1110. For example, the transfer robot 1126 in a first automation module 1110a is configured to transfer the first-type substrates 1112a and the second-type substrates 1112b between the buffer 1120 in the first automation module 1110a and the second automation module 1110b. In some embodiments, the buffer 1120 is disposed within the internal volume of the transfer chamber 1116, thereby advantageously reducing the overall footprint of the tool. Additionally, the buffer 1120 can be opened to the internal volume of the transfer chamber 1116 to facilitate the entry and exit of the transfer robot 1126.

[0060] One or more process chambers 1106 may include atmospheric chambers configured to operate at atmospheric pressure and vacuum chambers configured to operate at vacuum pressure. Examples of atmospheric chambers may generally include wet cleaning chambers, radiation chambers, heating chambers, inspection chambers, bonding chambers, and the like. Examples of vacuum chambers may include plasma activation chambers. Atmospheric chambers of the types discussed above may also operate under vacuum if necessary. One or more process chambers 1106 may be any process chamber or module required to perform bonding processes, cleaning processes, radiation processes, inspection processes (e.g., methods such as those discussed above and below) or the like. In some embodiments, each of the plurality of automation modules 1110 includes one or more process chambers 1106 comprising at least one of a wet cleaning chamber 1122, a plasma activation chamber 1130, a degassing chamber 1132, a radiation chamber 1134, an inspection chamber, or a bonding chamber 1140, such that the integrated hybrid bonding tool 1100 includes at least one wet cleaning chamber 1122, at least one plasma activation chamber 1130, at least one degassing chamber 1132, at least one radiation chamber 1134, at least one inspection chamber, and at least one bonding chamber 1140. One or more process chambers 1106 may be arranged at any suitable location within the integrated hybrid bonding tool 1100.

[0061] A wet cleaning chamber is configured to perform a wet cleaning process to clean one or more types of substrates via a fluid, such as water. The wet cleaning chamber may include a first wet cleaning chamber 1122a for cleaning a first type of substrate 1112a and / or a second wet cleaning chamber 1122b for cleaning a second type of substrate 1112b. A degassing chamber is configured to perform a degassing process to remove moisture via, for example, a high-temperature baking process. In some embodiments, the degassing chamber includes a first degassing chamber 1132a and / or a second degassing chamber 1132b. A plasma activation chamber may be configured to perform an activation process on the substrate to prepare for hybrid bonding. Activation aims to increase the bonding strength between surfaces. In some embodiments, the plasma activation chamber includes a first plasma activation chamber 1130a and / or a second plasma activation chamber 1130b. A radiation chamber 1134 is configured to perform a radiation process to reduce grain adhesion on a source, such as a framed substrate or a carrier substrate with reconstructed grains. For example, radiation chamber 1134 may be an ultraviolet radiation chamber configured to direct ultraviolet radiation at the source, or a heating chamber configured to heat the source. Reduced adhesion between the grains and the source facilitates easier removal of these grains from the source. Inspection chamber 1118 can be used to inspect the source and target before bonding to detect any defects. Bonding chamber 1140 is configured to transfer at least a portion of these grains from the source to the target and bond them to the target. Bonding chamber 1140 typically includes a first support 1142 for supporting one of the first type of substrates 1112a and a second support 1144 for supporting one of the second type of substrates 1112b. Inspection chamber 1118 can be used after bonding to inspect the bonded substrates or target to detect any defects caused by bonding.

[0062] In some embodiments, the last automation module among the plurality of automation modules 1110 (e.g., Figure 11 The third automation module 1110c includes one or more combined chambers 1140 (in Figure 11 (Two are shown in the diagram). In some embodiments, any of the plurality of automation modules 1110 may include an inspection chamber 1118 configured to acquire measurements of more types of substrates. Figure 11 In the diagram, inspection chamber 1118 is shown as part of the second automation module 1110b, which is coupled to the transfer chamber 1116 of the second automation module 1110b. However, inspection chamber 1118 may be coupled to any transfer chamber 1116 or be located within the transfer chamber 1116.

[0063] Controller 1180 controls the operation of any of the integrated hybrid bonding tools described herein, including integrated hybrid bonding tool 1100. Controller 1180 may use direct controls of integrated hybrid bonding tool 1100, or control a computer (or controller) associated with integrated hybrid bonding tool 1100. In operation, controller 1180 enables data collection and feedback from integrated hybrid bonding tool 1100 to optimize the performance of integrated hybrid bonding tool 1100 and to control the processing flow according to methods described herein, such as using an inspection system to detect defects in the target or source wafer before or after bonding. Controller 1180 typically includes a central processing unit (CPU) 1182, memory 1184, and support circuitry 1186. CPU 1182 may be any form of general-purpose computer processor suitable for industrial environments. Support circuitry 1186 is conventionally coupled to CPU 1182 and may include cache, clock circuitry, input / output subsystems, power supplies, etc. Common software programs (such as those described herein) may be stored in memory 1184, which, when executed by CPU 1182, transforms CPU 1182 into a dedicated computer (controller 1180). Common software programs may also be stored and / or executed by a second controller (not shown) located remotely from the integrated hybrid tool 1100.

[0064] Memory 1184 is in the form of a computer-readable storage medium containing instructions that, when executed by CPU 1182, facilitate the operation of semiconductor processes and devices. The instructions in memory 1184 are in the form of a program product, such as a program that implements the methods of this principle. The program code may conform to any of many different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program product defines the functionality of aspects, including the methods described herein. Exemplary computer-readable storage media include, but are not limited to: non-writable storage media that permanently store information (e.g., read-only memory elements within a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and writable storage media that store changeable information (e.g., floppy disks within a floppy disk drive, or hard disk drives, or any type of solid-state random access semiconductor memory). Such a computer-readable storage medium is an aspect of this principle when carrying computer-readable instructions that direct the functionality of the methods described herein.

[0065] Embodiments based on these principles may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored using one or more computer-readable media, which may be read and executed by one or more processors. The computer-readable media may include any mechanism for storing or transferring information in a form readable by a machine (e.g., a computing platform or a “virtual machine” running on one or more computing platforms). For example, the computer-readable media may include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable media may include a non-transitory computer-readable medium.

[0066] Although the foregoing describes embodiments of this principle, other and further embodiments of this principle may be conceived without departing from its basic scope.

Claims

1. An inspection device for detecting abnormalities, comprising: At least one time delay integral (TDI) linear sensor, having a TDI linear sensor length, a TDI linear sensor optical input, and a TDI linear sensor data output; as well as Multiple optical components are positioned adjacent to each other, wherein each of the multiple optical components is positioned such that the optical output is focused on a segment of the length of the TDI linear sensor, and wherein the optical input having an input field of view (FOV) is positioned to receive a portion of the surface being inspected.

2. The testing equipment as claimed in claim 1, wherein the TDI linear sensor is approximately 80 mm in length.

3. The testing equipment as described in claim 1, further comprising: The platform has an upper surface for supporting an object having the surface being inspected and has motion components configured to move the platform. as well as The controller communicates with the motion components to move the platform with respect to the optical inputs of the plurality of optical components.

4. The inspection apparatus of claim 3, wherein the controller moves the platform to adjust the distance between the optical input and the surface being inspected.

5. The inspection apparatus of claim 3, wherein the controller communicates with the motion component, the plurality of optical components and the TDI linear sensor, and is configured to scan the entire surface of the substrate.

6. The testing apparatus of claim 5, wherein the substrate has a small chip bonded to the substrate.

7. The inspection apparatus of claim 3, wherein the controller communicates with the motion component, the optical component and the TDI linear sensor, and is configured to scan a carrier having a single-cut microchip.

8. The testing equipment as described in claim 3, further comprising: An integrated Z-profilometer, featuring a laser-based autofocus module, is configured to determine the Z-profilament of the surface being inspected before acquiring a surface image via the TDI linear sensor; or An external Z-profilometer is configured to provide the Z-profilometer of the surface under inspection before acquiring a surface image via the TDI linear sensor, wherein the external Z-profilometer communicates with the controller.

9. The inspection apparatus of claim 1, wherein the plurality of optical components have similar focal points and FOVs.

10. The inspection apparatus of claim 1, wherein at least one of the plurality of optical components is combined with incident illumination or dark field illumination.

11. The inspection apparatus of claim 1, wherein at least one of the plurality of optical components has a tunable lens configured to focus the at least one of the plurality of optical components.

12. An inspection device for detecting abnormalities, comprising: At least one time delay integration (TDI) linear sensor having a TDI linear sensor length of approximately 50 mm to approximately 160 mm, a TDI linear sensor optical input, and a TDI linear sensor data output; Multiple optical components are positioned adjacent to each other, wherein each of the multiple optical components is positioned such that the optical output is focused on a segment of the length of the TDI linear sensor, and the optical input having an input field of view (FOV) is positioned to receive a portion of the surface being inspected. The platform has an upper surface for supporting an object having the surface being inspected and has a 4-axis motion assembly configured to move the platform. as well as The controller communicates with the 4-axis motion assembly, the plurality of optical components and the TDI linear sensor, and is configured to scan the entire surface of the substrate or carrier.

13. The inspection apparatus of claim 12, wherein the substrate has a small chip bonded to the substrate.

14. The inspection apparatus of claim 12, wherein the plurality of optical components have similar focal lengths and FOVs.

15. The inspection apparatus of claim 12, wherein at least one of the plurality of optical components is combined with incident illumination or dark field illumination.

16. The inspection apparatus of claim 12, wherein at least one of the plurality of optical components has a tunable lens configured to focus the at least one of the plurality of optical components.

17. The testing equipment as claimed in claim 12, further comprising: An integrated Z-profilometer, featuring a laser-based autofocus module, is configured to determine the Z-profilament of the surface being inspected before acquiring a surface image via the TDI linear sensor; or An external Z-profilometer is configured to provide the Z-profilometer of the surface under inspection before acquiring a surface image via the TDI linear sensor, wherein the external Z-profilometer communicates with the controller.

18. A method for obtaining test data, comprising: The surface of a substrate or carrier is scanned by using multiple optical components positioned adjacent to each other; Image data from the surface is received into the plurality of optical components, and the image data is focused onto a single time delay integral (TDI) linear sensor, wherein each optical component focuses optical data onto a different portion of the TDI linear sensor; The image data from the TDI linear sensor is reconstructed to form reconstructed image data, and the reconstructed image data is mapped to the position on the surface; The reconstructed image data and location data are analyzed to determine the location of anomalies and to form a defect map of the surface; as well as Inferences are made based on the defect map, and corrective actions are performed based on the inferences.

19. The method of claim 18, wherein the correction action includes marking the chiplet as defective and removing the chiplet from the bonding machine selection pool.

20. The method of claim 18, wherein the corrective action includes enhancing the pre-bonding process to mitigate future anomalies.

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