Airflow uniform distribution device and method for chemical vapor deposition

Abstract

The invention relates to the technical field of vacuum coating, and discloses a gas flow uniform distribution device for chemical vapor deposition, which comprises a reaction cavity with a deposition space defined therein; the gas uniformizing assembly is arranged in the deposition space and is used for uniformly diffusing the introduced reaction gas in the horizontal direction; the substrate bearing area is arranged on the side face of the gas uniformizing assembly and used for placing a substrate to be deposited; the gas inlet system is communicated with the gas uniformizing assembly and is used for conveying reaction gas to the gas uniformizing assembly; the exhaust system is arranged at the bottom of the reaction cavity and is used for exhausting reacted gas; by arranging the gas uniformizing assembly, the introduced reaction gas is uniformly diffused in the horizontal direction, the spraying state can be eliminated, a transverse reaction gas flow field is formed above the substrate, the uniformity of gas flow distribution and reactant concentration distribution in the deposition space is improved, and the deposition efficiency is improved. Therefore, a physical foundation is laid for obtaining a high-quality thin film with consistent thickness and uniform components; the invention further provides a method suitable for the device.

Description

Technical Field

[0001] This application relates to the technical field of vacuum coating, and more particularly to a gas flow uniform distribution apparatus and method for chemical vapor deposition. Background Technology

[0002] In chemical vapor deposition, the precursor is usually delivered to the reaction zone in gaseous form, where it decomposes or reacts under specific process conditions, and finally deposits on the substrate surface to form the desired functional film. Currently, the vast majority of CVD equipment uses a pipeline air intake method, which means that the reaction gas is directly introduced into the reaction chamber through the air intake pipeline. However, this traditional air intake method has significant problems: when the gas enters the cavity from the pipe outlet, it often appears in a "jet" state, which can easily generate local eddies and airflow dead zones in the cavity; at the same time, the reactive gas is gradually consumed as it flows over the substrate surface, resulting in uneven distribution of reactant concentration at different locations on the substrate; this inhomogeneity of the airflow field and reactant concentration field will directly cause inconsistencies in the thickness, composition and microstructure of the deposited film, seriously affecting the performance reliability of the film product and restricting the process yield in large-scale production.

[0003] Therefore, there is an urgent need for a gas flow uniform distribution device and method for chemical vapor deposition to solve the above problems.

[0004] The above content is only used to help understand the technical solution of this application and does not represent an admission that the above content is prior art. Summary of the Invention

[0005] The main objective of this application is to provide a gas flow uniformity device for chemical vapor deposition, so as to solve the problem of poor film deposition uniformity caused by uneven gas flow distribution in the reaction chamber in the prior art.

[0006] To achieve the above objectives, this application provides a gas flow uniform distribution device for chemical vapor deposition, including a reaction chamber, the interior of which defines a deposition space; A gas equalization component is disposed within the deposition space to uniformly diffuse the introduced reaction gas in the horizontal direction. The substrate support area is located on the side of the gas uniform assembly and is used to place the substrate to be deposited. An air intake system, connected to the gas equalization component, is used to supply the reaction gas to the gas equalization component; An exhaust system, located at the bottom of the reaction chamber, is used to exhaust the gases produced after the reaction.

[0007] As a preferred embodiment of this application, the gas equalization component includes at least one set of gas equalization disks, each set of gas equalization disks includes a first gas equalization disk and a second gas equalization disk arranged sequentially at intervals along the gas flow direction, and the first gas equalization disk and the second gas equalization disk are connected to the air intake system.

[0008] As a preferred embodiment of this application, an airflow channel is formed between the first air distribution plate and the second air distribution plate, and an adjustment mechanism for adjusting its flow cross-sectional area is provided in the airflow channel.

[0009] As a preferred embodiment of this application, the adjustment mechanism includes two relatively rotatable adjustment plates. The two adjustment plates are of a breathable structure and are disposed between the first air distribution plate and the second air distribution plate. The cross-sectional area of ​​the airflow channel is adjusted by changing the included angle between the two plates.

[0010] As a preferred embodiment of this application, the air intake system includes a first air inlet and a second air inlet that are respectively connected to the first air distribution plate and the second air distribution plate. The first air inlet and the second air inlet are respectively provided with a first regulating valve and a second regulating valve for independently controlling the gas flow.

[0011] As a preferred embodiment of this application, the exhaust system includes an exhaust port located at the bottom of the reaction chamber and a control valve located on the exhaust port.

[0012] As a preferred embodiment of this application, a baffle plate for guiding and buffering airflow is further provided at the bottom of the reaction chamber, between the gas equalization component and the exhaust port of the exhaust system.

[0013] As a preferred embodiment of this application, the first and second air distribution plates are double-layer perforated plate structures, the aperture size of the first perforated plate is larger than that of the second perforated plate, and there is a gap between the first and second perforated plates, and the first perforated plate is connected to the air intake system.

[0014] A method for uniformly distributing gas flow for chemical vapor deposition, applicable to any of the aforementioned gas flow uniform distribution apparatuses for chemical vapor deposition, comprising: The substrate to be deposited is placed in the substrate support area within the reaction chamber; The reaction gas is introduced into the gas equalization component located in the deposition space of the reaction chamber through the air intake system; The gas equalization component is used to evenly diffuse the reaction gas in the horizontal direction to form a transverse airflow. The flow cross-sectional area of ​​the airflow channel is actively adjusted by adjusting the regulating plate set in the airflow channel of the gas equalization component to control the airflow distribution. The transverse airflow is passed over the deposition surface of the substrate to induce a chemical reaction on the substrate surface and deposit a thin film; and The reacted gases are discharged through an exhaust system located at the bottom of the reaction chamber.

[0015] As a preferred embodiment of this application, the step of actively adjusting the flow cross-sectional area of ​​the airflow channel specifically includes: continuously or in stages adjusting the flow cross-sectional area of ​​the airflow channel by changing the included angle between the two adjustment plates.

[0016] This application provides a gas flow uniformity device for chemical vapor deposition. By setting up a gas flow uniformity component, the incoming reactive gas is uniformly diffused in the horizontal direction, eliminating the jetting state and transforming point or linear gas flow into a uniform planar gas flow source. The substrate bearing area is set on the side of the gas flow uniformity component. The uniform gas flow generated by the gas flow uniformity component flows laterally across the substrate surface, rather than the vertical flow of the traditional method. This ensures that fresh reactive gas can be continuously and uniformly replenished to the entire surface of the substrate, forming a uniform, stable, and directionally controllable transverse reactive gas flow field above the substrate. This gas flow field improves the uniformity of gas flow distribution and reactant concentration distribution in the deposition space, thereby laying the physical foundation for obtaining high-quality thin films with consistent thickness, uniform composition, and uniform structure, and improving the performance reliability and large-scale production yield of thin film products. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a gas flow distribution device for chemical vapor deposition in one embodiment of this application; Figure 2 This is a schematic diagram of the gas flow direction of a gas flow distribution device for chemical vapor deposition in one embodiment of this application.

[0018] Explanation of reference numerals in the attached figures: 1. First air inlet; 2. First air distribution plate; 3. Adjusting plate; 4. Substrate; 5. Barrier plate; 6. Second air distribution plate; 7. Second air inlet; 8. Air extraction port; 9. Control valve; 10. Reaction chamber; 11. First regulating valve; 12. Second regulating valve. Detailed Implementation

[0019] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0020] Furthermore, descriptions using terms such as "first" and "second" in this application are for descriptive purposes only (e.g., to distinguish identical or similar elements) and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, technical solutions from different embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If a combination of technical solutions is contradictory or impossible to implement, such a combination should be considered nonexistent and not within the scope of protection claimed in this application.

[0021] Please refer to Figure 1 , Figure 2 In one embodiment, the gas flow distribution device for chemical vapor deposition provided in this application includes a reaction chamber 10, which defines a deposition space inside. A gas equalization component, set within the deposition space, is used to uniformly diffuse the introduced reactive gas in the horizontal direction. The substrate 4 bearing area is located on the side of the gas uniform assembly and is used to place the substrate 4 to be deposited. The air intake system, connected to the gas distribution component, is used to supply the reaction gas to the gas distribution component; An exhaust system, located at the bottom of the reaction chamber 10, is used to exhaust the gases produced after the reaction.

[0022] In use, the reactant gas enters the cavity through the air intake system and is first processed by the gas equalization component, transforming it from a concentrated jet into a planar airflow source that diffuses uniformly in the horizontal direction. Subsequently, this uniform transverse airflow flows parallel to the surface of the substrate 4, which is set on the side of the gas equalization component, to achieve synchronous and uniform supply of reactants to all parts of the substrate 4, thereby overcoming the concentration gradient problem caused by consumption along the way in traditional vertical airflow. Finally, the waste gas after the reaction is discharged in an orderly manner by the exhaust system at the bottom of the cavity, forming a stable and directional overall flow field with the air intake above, which together suppresses the generation of eddies and dead zones, providing basic flow field conditions for uniform thin film deposition. By setting up a gas equalization component, the introduced reactive gas is uniformly diffused in the horizontal direction, eliminating the jetting state. The substrate 4 bearing area is set on the side of the gas equalization component. The uniform airflow generated by the gas equalization component flows laterally across the surface of the substrate 4, rather than the traditional vertical flow. This ensures that fresh reactive gas can be continuously and uniformly replenished to the entire surface of the substrate 4, forming a uniform, stable and directionally controllable transverse reactive gas flow field above the substrate 4. This gas flow field improves the uniformity of gas flow distribution and reactant concentration distribution in the deposition space, thus laying the physical foundation for obtaining high-quality thin films with consistent thickness, uniform composition, and uniform structure, and improving the performance reliability and large-scale production yield of thin film products.

[0023] Specifically, please refer to Figure 1 , Figure 2 Based on the above embodiments, the gas equalization assembly includes at least one set of gas equalization disks. Each set of gas equalization disks includes a first gas equalization disk 2 and a second gas equalization disk 6 arranged sequentially at intervals along the gas flow direction. More specifically, the first gas equalization disk 2 is located in the reaction chamber 10 near the top of the reaction chamber 10, and the second gas equalization disk 6 is located in the reaction chamber 10 near the bottom of the reaction chamber 10. An airflow channel is formed between the first gas equalization disk 2 and the second gas equalization disk 6, and an adjustment mechanism for adjusting its flow cross-sectional area is provided in the airflow channel. The first gas equalization disk 2 and the second gas equalization disk 6 are connected to the air intake system.

[0024] It is understandable that by placing the first air distribution plate 2 near the top of the cavity, it can serve as the main airflow diffusion and direction guidance layer, mainly receiving and processing the initial airflow from the intake system, transforming it from concentrated intake into airflow with a certain directionality and preliminary homogenization effect; while by placing the second air distribution plate 6 near the bottom of the cavity, it can serve as the secondary airflow homogenization and speed control layer, performing final homogenization and direction correction on the airflow after adjustment by the intermediate adjustment mechanism.

[0025] This layered and independently supplied air layout enables the gas equalization component to not only form a multi-stage airflow processing sequence of "diffusion-regulation-re-equalization" in the vertical direction, but also to achieve bidirectional adjustability and dynamic balance of the airflow profile (such as velocity distribution and concentration gradient) in the cavity by independently adjusting the gas type, flow rate and ratio of the upper and lower air intakes.

[0026] This structure allows the device to adapt more flexibly to process requirements under different gas properties, deposition rates, and cavity geometries, further improving the accuracy of airflow uniformity control and process adaptability.

[0027] Specifically, please refer to Figure 1 , Figure 2 Based on the above embodiments, the adjustment mechanism includes two relatively rotatable adjustment plates 3. The two adjustment plates 3 are of a breathable structure. The two adjustment plates 3 are disposed between the first air distribution plate 2 and the second air distribution plate 6, and the cross-sectional area of ​​the airflow channel is adjusted by changing the included angle between the two.

[0028] It is understood that the two adjusting plates 3 are rotatably connected inside the reaction chamber 10 through the first rotating shaft and the second rotating shaft. The first rotating shaft and the second rotating shaft are respectively located at both ends of the middle position of the two adjusting plates 3. Specifically, one end of the two adjusting plates 3 is rotatably connected to the inside of the reaction chamber 10 through the first rotating shaft, and the other end of the two adjusting plates 3 is rotatably connected to the inside of the chamber through the second rotating shaft. The second rotating shaft extends outward through the reaction chamber 10 and is connected to a drive assembly or a manual rotating handle. The drive assembly can be a motor or an electric motor. The motor or electric motor is electrically or signal-connected to the control system. A rubber ring or a thin film cotton or other sealing material is provided between the second rotating shaft and the reaction chamber 10 to achieve a seal between the second rotating shaft and the reaction chamber 10. By rotating the adjustment plate 3, the tilt angle of the adjustment plate 3 can be changed. The tilt angle of the adjustment plate 3 can be continuously adjusted or adjusted in stages between 0° and 60°. This allows for real-time adjustment of the airflow distribution ratio in different directions to compensate for the inherent air field non-uniformity in the chamber.

[0029] Furthermore, the ventilated structure of the regulating plate 3 can be a perforated plate structure or a grid plate structure. When the regulating plate 3 is a perforated plate structure, multiple through holes are evenly opened on the regulating plate 3. The shape of the through holes can be one of the following: circular, rectangular, or elliptical. When the structure of the regulating plate 3 is a grid plate structure, the regulating plate 3 includes a central axis and multiple fan blades symmetrically arranged on both sides of the central axis. The fan blades on both sides are symmetrically distributed at 180 degrees, and the multiple fan blades on each side are arranged at equal intervals along the central axis to form a grid-like structure that allows gas to pass through.

[0030] Specifically, please refer to Figure 1 , Figure 2 Based on the above embodiments, the air intake system includes a first air inlet 1 and a second air inlet 7 that are respectively connected to the first air distribution plate 2 and the second air distribution plate 6. The first air inlet 1 and the second air inlet 7 are respectively provided with a first regulating valve 11 and a second regulating valve 12 for independently controlling the gas flow.

[0031] In practical applications, this system supports multiple gas supply modes: it can simultaneously introduce a fixed amount of reaction gas into the first air inlet 1 and the second air inlet 7 to form a bidirectional coordinated gas supply; or it can shut down one of the channels according to process requirements and supply gas through only a single air inlet. The first regulating valve 11 and the second regulating valve 12 are used to regulate the air inlet and the air intake volume of the inlet, so as to achieve a balance in the supply of reaction gas in the reaction chamber 10. Furthermore, the first regulating valve 11 and the second regulating valve 12 are preferably mass flow meters, which can achieve high-precision flow control by real-time monitoring and mass conversion of gas flow. The regulating valves can be installed on the connecting pipes of the corresponding air inlets and the flow control can be achieved by adjusting the valve opening. Alternatively, they can be integrated into the air inlet structure and automatically adjusted by receiving external control signals, thereby achieving flexible and precise control of the supply status of the reaction gas.

[0032] Specifically, based on the above embodiments, the exhaust system includes an exhaust port 8 located at the bottom of the reaction chamber 10, and a control valve 9 located on the exhaust port 8.

[0033] It is understood that by setting an exhaust port 8 with a control valve 9 at the bottom of the reaction chamber 10 to form an exhaust system, the exhaust system forms a stable low-pressure zone at the bottom of the chamber. Together with the uniform air intake generated by the gas equalization component above, it drives the reaction gas to form a unidirectional and orderly laminar flow path from top to bottom, flowing laterally from the gas equalization component across the surface of the substrate 4 and finally flowing to the bottom. By precisely adjusting the opening of control valve 9, the exhaust rate and cavity pressure can be actively controlled, thereby achieving a dynamic balance between the flow rate and residence time of the entire airflow field. The above settings ensure that reaction byproducts and residual gases are discharged in a timely and stable manner, preventing their accumulation and interference in the deposition area. At the same time, by maintaining constant cavity pressure and flow rate, uneven film growth caused by pressure fluctuations or airflow turbulence is suppressed, thereby improving the stability and repeatability of the deposition process.

[0034] Specifically, please refer to Figure 1 , Figure 2 Based on the above embodiments, a baffle plate 5 for guiding and buffering airflow is also provided at the bottom of the reaction chamber 10, between the gas equalization component and the exhaust port 8 of the exhaust system.

[0035] It is understandable that when the vent 8 is opened for venting, the baffle plate 5 is used to reduce the impact on the reaction gas during the venting process, and to prevent some of the reaction gas from being directly drawn away during venting, thereby reducing the concentration of the reaction gas; the control valve 9 is used to control the amount of venting, thereby regulating the concentration of the reaction gas in the chamber and ensuring that the concentration of the reaction gas is relatively balanced. Furthermore, two support frames are provided inside the reaction chamber 10 and at the bottom of the reaction chamber 10. Multiple bolt holes are provided on the two support frames in the vertical direction. The baffle plate 5 is located between the two support frames and is fastened by bolts. By connecting the baffle plate 5 to the bolt holes of different heights, the height of the baffle plate 5 can be adjusted. By adjusting the height of the baffle plate 5, the effective buffer distance between the deposition reaction zone and the exhaust port 8 can be precisely changed, thereby flexibly controlling the path and speed distribution of the airflow from the reaction zone to the exhaust port 8. When the baffle plate 5 is raised, the exhaust resistance increases relatively, which helps to prolong the residence time of the gas in the deposition zone and promotes more full utilization of the reaction gas on the surface of the substrate 4. Conversely, lowering the baffle plate 5 can accelerate the discharge of waste gas and avoid the accumulation of by-products. The adjustment function of the baffle plate 5 enables the device to be quickly adapted and optimized according to the specific requirements of different processes for the concentration, pressure and flow rate of the reactant gas. This enhances the flexibility of process control and the stability of the deposition environment while maintaining the balance of reactant gas concentration and suppressing flow field disturbances.

[0036] Specifically, please refer to Figure 1 , Figure 2 Based on the above embodiments, the first air distribution plate 2 and the second air distribution plate 6 are double-layer perforated plate structures. The diameter of the holes on the first layer perforated plate is larger than that on the second layer perforated plate, and there is a gap between the first layer perforated plate and the second layer perforated plate. The first layer perforated plate is connected to the air intake system.

[0037] It can be understood that the first gas equalization plate 2 and the second gas equalization plate 6 are circular in shape and have a double-layer perforated plate structure inside. The first layer of perforated plate is designed with large holes evenly distributed in the middle, which is used to split the concentrated airflow from the air inlet for the first time and guide it to the second layer of perforated plate. The second layer of perforated plate is designed with small holes scattered at the edges, which is used to reduce the gas flow rate, equalize the gas pressure and guide the gas vertically to the regulating plate 3 and the substrate 4 below. More specifically, a metal mesh is also provided at the upper end of the first perforated plate to disperse large vortices in the airflow that enters the reaction chamber directly from the air inlet and promote the diffusion of the airflow. Furthermore, the perforated plate structure of the first layer of the gas distribution plate has a uniformly distributed perforation diameter of 5mm-20mm and an opening rate of 10% to 30%; the perforated plate structure of the second layer has a perforation diameter of 0.5mm-4mm and an opening rate of 50%-70%.

[0038] A method for uniformly distributing gas flow in chemical vapor deposition, applicable to the aforementioned gas flow uniform distribution apparatus for chemical vapor deposition, includes the following steps: S1. Place the substrate 4 to be deposited in the substrate 4 bearing area inside the reaction chamber 10; S2. The reaction gas is introduced into the gas equalization component set in the deposition space of the reaction chamber 10 through the air intake system; S3. The gas uniformity component is used to uniformly diffuse the reaction gas in the horizontal direction to form a transverse airflow. The flow cross-sectional area of ​​the airflow channel is actively adjusted by adjusting the regulating plate 3 set in the airflow channel of the gas uniformity component to control the airflow distribution. S4. A transverse airflow is passed over the deposition surface of substrate 4 to cause a chemical reaction on the surface of substrate 4 and deposit a thin film; and S5. The gas after the reaction is discharged through the exhaust system located at the bottom of the reaction chamber 10.

[0039] Specifically, based on the above embodiments, the step of actively adjusting the flow cross-sectional area of ​​the airflow channel includes: continuously or in increments adjusting the flow cross-sectional area of ​​the airflow channel by changing the included angle between the two adjusting plates 3.

[0040] It is understood that in this method, a clean substrate 4 to be deposited is loaded and firmly fixed on the substrate 4 bearing area located on the side of the gas equalization component. In the closed reaction chamber 10, the vacuum system is started to pump the chamber to the background vacuum level required by the process. According to the process formula of the target thin film, the opening degree of each gas inlet regulating valve, the working pressure of the chamber, the deposition temperature and other parameters are preset. When the air intake system is turned on, the reaction gases (such as silane, ammonia, inert carrier gas, etc.) enter the first gas equalization plate 2 and the second gas equalization plate 6 at a preset flow rate through the first air intake 1 and the second air intake 7, respectively, under the control of their respective regulating valves. In each gas equalization plate, the gas undergoes the process of breaking up the vortex with a metal mesh, diverting the flow through the first layer of large perforated plate, fine equalization and deceleration through the second layer of small perforated plate, and is transformed into two vertically downward and uniformly distributed low-speed airflows. The uniform airflows from the two uniform air distribution plates converge in the middle channel. By controlling the drive mechanism of the regulating plate 3, the two regulating plates 3 are adjusted to a predetermined angle. This process actively integrates and fine-tunes the converged airflow to eliminate any possible residual micro-uniformity, and finally outputs a transverse laminar or quasi-laminar flow with highly uniform velocity and concentration in the horizontal cross section. The uniform transverse airflow sweeps across the entire deposition surface of the substrate 4 in parallel over the substrate 4 bearing area. At the appropriate temperature provided by the heater, the reactant gas decomposes or undergoes a chemical reaction on the surface of the substrate 4, and the solid product is uniformly deposited on the substrate 4 to form a thin film. Since the airflow is uniform and transversely supplemented, the reactant supply rate at each point on the surface of the substrate 4 is basically the same, thereby ensuring the uniformity of the thin film growth. The residual gas and byproducts after the reaction continue to flow under the airflow. After being guided and buffered by the bottom baffle plate 5, they are smoothly extracted by the exhaust port 8. The opening of the control valve 9 located on the exhaust port 8 is controlled by feedback to match the exhaust rate with the intake rate, thereby stabilizing the pressure in the reaction chamber 10 at the process set value. During the deposition process, the angle of the adjustment plate 3 or the opening of each air intake adjustment valve can be finely adjusted according to the feedback signal of the online film thickness monitor to achieve dynamic closed-loop optimization of the deposition process and ensure the ultimate stability of film uniformity throughout the entire deposition cycle.

[0041] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, apparatus, article, or method that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, apparatus, article, or method. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, apparatus, article, or method that includes that element.

[0042] The above description is only a preferred embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural changes made based on the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A gas flow uniform distribution device for chemical vapor deposition, characterized in that, This includes a reaction chamber, which defines a deposition space. A gas equalization component is disposed within the deposition space to uniformly diffuse the introduced reaction gas in the horizontal direction. The substrate support area is located on the side of the gas uniform assembly and is used to place the substrate to be deposited. An air intake system, connected to the gas equalization component, is used to supply the reaction gas to the gas equalization component; An exhaust system, located at the bottom of the reaction chamber, is used to exhaust the gases produced after the reaction.

2. The gas flow distribution device for chemical vapor deposition according to claim 1, characterized in that, The gas equalization component includes at least one set of gas equalization disks. Each set of gas equalization disks includes a first gas equalization disk and a second gas equalization disk arranged sequentially at intervals along the gas flow direction. The first gas equalization disk and the second gas equalization disk are connected to the air intake system.

3. The gas flow distribution device for chemical vapor deposition according to claim 2, characterized in that, An airflow channel is formed between the first air distribution plate and the second air distribution plate, and an adjustment mechanism for adjusting the flow cross-sectional area is provided in the airflow channel.

4. The gas flow distribution device for chemical vapor deposition according to claim 3, characterized in that, The adjustment mechanism includes two relatively rotatable adjustment plates. The two adjustment plates are of a breathable structure and are disposed between the first air distribution plate and the second air distribution plate. The cross-sectional area of ​​the airflow channel is adjusted by changing the included angle between the two plates.

5. The gas flow distribution device for chemical vapor deposition according to claim 2, characterized in that, The air intake system includes a first air inlet and a second air inlet that are respectively connected to the first air distribution plate and the second air distribution plate. The first air inlet and the second air inlet are respectively provided with a first regulating valve and a second regulating valve for independently controlling the gas flow.

6. The gas flow uniform distribution device for chemical vapor deposition according to claim 1, characterized in that, The exhaust system includes an exhaust port located at the bottom of the reaction chamber and a control valve located on the exhaust port.

7. The gas flow distribution apparatus for chemical vapor deposition according to claim 6, characterized in that, At the bottom of the reaction chamber, between the gas equalization component and the exhaust port of the exhaust system, a baffle plate is also provided for guiding and buffering the airflow.

8. The gas flow distribution apparatus for chemical vapor deposition according to claim 2, characterized in that, The first and second air distribution plates are double-layer perforated plate structures. The aperture size of the first perforated plate is larger than that of the second perforated plate, and there is a gap between the first and second perforated plates. The first perforated plate is connected to the air intake system.

9. A method for uniformly distributing gas flow for chemical vapor deposition, applicable to the gas flow uniform distribution apparatus for chemical vapor deposition as described in any one of claims 1-8, characterized in that, include: The substrate to be deposited is placed in the substrate support area within the reaction chamber; The reaction gas is introduced into the gas equalization component located in the deposition space of the reaction chamber through the air intake system; The gas equalization component is used to evenly diffuse the reaction gas in the horizontal direction to form a transverse airflow. The flow cross-sectional area of ​​the airflow channel is actively adjusted by adjusting the regulating plate set in the airflow channel of the gas equalization component to control the airflow distribution. The transverse airflow is passed over the deposition surface of the substrate to induce a chemical reaction on the substrate surface and deposit a thin film; and The reacted gases are discharged through an exhaust system located at the bottom of the reaction chamber.

10. A gas flow uniform distribution method for chemical vapor deposition according to claim 9, characterized in that, The step of actively adjusting the flow cross-sectional area of ​​the airflow channel specifically includes: adjusting the flow cross-sectional area of ​​the airflow channel continuously or in increments by changing the included angle between the two adjustment plates.

Images