Wafer processing systems and methods, dresser components, chemical mechanical polishing equipment

Abstract

This application provides a wafer processing system and method, a dresser assembly, and a chemical mechanical polishing (CMP) device, belonging to the semiconductor manufacturing field. The system includes: a polishing disk; a dresser comprising a dresser arm and a dresser disk, wherein during the dressing process, the dresser arm pivots and the dresser disk rotates to ensure that the dressing area of ​​the dresser disk covers the entire area of ​​the polishing disk; an eddy current sensor embedded in the polishing disk for acquiring eddy current signals as the polishing disk rotates; and a controller for dividing the eddy current signals according to the rotation cycle of the dresser disk using a rotary encoder signal corresponding to the dresser, to extract the target eddy current signal corresponding to the dresser disk within its rotation cycle; and determining whether the dresser disk needs to be replaced based on the fluctuation range and / or standard deviation of the fluctuation characteristics of the dresser disk reflected by the target eddy current signal. This application can effectively determine the state of the dresser disk, ensuring the stability of the wafer polishing effect.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a wafer processing system and method, a dresser assembly, and a chemical mechanical polishing device. Background Technology

[0002] Chemical Mechanical Polishing (CMP) is an ultra-precision surface finishing technique that achieves global planarization. During CMP, a support head is typically used to press the wafer against the upper surface of a polishing pad, applying a downward load to the wafer. Simultaneously, polishing slurry is supplied to the upper surface of the polishing pad and distributed between the wafer and the pad, allowing the wafer to undergo chemical and mechanical polishing through a combination of chemical and mechanical processes. To ensure good surface properties on the polishing pad, a dresser is usually used to trim its surface.

[0003] However, as the dressing device is used for a longer period of time, the dressing disk may wear out or tilt, resulting in concentrated dressing pressure on some parts of the dressing disk surface and no dressing pressure on others. This causes uneven dressing on the surface of the polishing pad, which in turn affects the polishing effect of the wafer. Summary of the Invention

[0004] In view of the above problems, this application provides a wafer processing system and method, a dresser assembly, and a chemical mechanical polishing device, thereby solving or at least alleviating one or more of the above-mentioned problems and other problems existing in the prior art.

[0005] A first aspect of this application provides a wafer fabrication system, comprising:

[0006] Polishing disc;

[0007] A dresser, comprising a dressing arm and a dressing disc, wherein during the dressing process the dressing arm pivots and the dressing disc rotates so that the dressing area of ​​the dressing disc covers the entire area of ​​the polishing disc.

[0008] An eddy current sensor, embedded in a polishing disc, is used to collect eddy current signals as the polishing disc rotates.

[0009] The controller is used to divide the eddy current signal according to the rotation cycle of the dressing disk using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disk within its rotation cycle; and to determine whether the dressing disk needs to be replaced based on the fluctuation range and / or fluctuation standard deviation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose characteristics and / or morphological characteristics of the dressing disk.

[0010] In some alternative embodiments, the controller specifically determines the trimming disk characteristics through the following steps:

[0011] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor, and the distance is determined as a feature of the dressing disk; and / or,

[0012] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor. The distance is used to calculate the tilt angle of each area of ​​the dressing surface relative to the horizontal plane, and the tilt angle is determined as the feature of the dressing disk.

[0013] In some alternative embodiments, the controller is also used to:

[0014] When the current wafer polishing scenario falls under the first category, the fluctuation range is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the fluctuation standard deviation are used to determine whether the dressing pad needs to be replaced. In the first category, the impact of local defects on the wafer polishing yield is greater than the preset level.

[0015] When the current wafer polishing scenario falls under the second category, the standard deviation of the fluctuation is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the standard deviation of the fluctuation are used to determine whether the dressing pad needs to be replaced. In the second category, the thin film uniformity of the wafer has a greater impact on the yield of wafer polishing than the preset level.

[0016] In some optional embodiments, the controller determines whether the trimming disc needs to be replaced by the following steps:

[0017] When using the fluctuation range to determine whether the trimmer needs to be replaced, if the fluctuation range is greater than the predetermined range threshold, it is determined that the trimmer needs to be replaced.

[0018] When using the standard deviation of fluctuation to determine whether the trimmer needs to be replaced, if the standard deviation of fluctuation is greater than the predetermined standard deviation threshold, it is determined that the trimmer needs to be replaced.

[0019] When using both the range and standard deviation of volatility to determine whether the trimmer needs to be replaced:

[0020] First, determine if the fluctuation range corresponding to the trimmed market characteristics is greater than a predetermined range threshold. If so, directly determine that the trimmed market needs to be replaced. If not, determine if the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than a predetermined standard deviation threshold. If the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than the predetermined standard deviation threshold, determine that the trimmed market needs to be replaced; or...

[0021] The comprehensive difference corresponding to the characteristics of the trimmed plate is calculated based on the fluctuation range and fluctuation standard deviation. When the comprehensive difference is greater than the predetermined comprehensive threshold, it is determined that the trimmed plate needs to be replaced.

[0022] In some optional embodiments, the controller calculates the overall difference corresponding to the trimmed disk features by weighted summation;

[0023] The weights corresponding to the fluctuation range and fluctuation standard deviation are determined by the wafer polishing scenario.

[0024] In some optional embodiments, the range threshold is in the range of 0.35 mm to 0.5 mm; the standard deviation threshold is in the range of 0.05 mm to 0.1 mm.

[0025] A second aspect of this application provides a wafer fabrication method, including:

[0026] The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period.

[0027] The need to replace the dressing disk is determined based on the fluctuation range and / or standard deviation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose characteristics and / or morphological characteristics of the dressing disk.

[0028] In some alternative embodiments, the trimming disc features are determined through the following steps:

[0029] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor, and the distance is determined as a feature of the dressing disk; and / or,

[0030] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor. The distance is used to calculate the tilt angle of each area of ​​the dressing surface relative to the horizontal plane, and the tilt angle is determined as the feature of the dressing disk.

[0031] In some optional embodiments, the wafer fabrication method further includes:

[0032] When the current wafer polishing scenario falls under the first category, the fluctuation range is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the fluctuation standard deviation are used to determine whether the dressing pad needs to be replaced. In the first category, the impact of local defects on the wafer polishing yield is greater than the preset level.

[0033] When the current wafer polishing scenario falls under the second category, the standard deviation of the fluctuation is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the standard deviation of the fluctuation are used to determine whether the dressing pad needs to be replaced. In the second category, the thin film uniformity of the wafer has a greater impact on the yield of wafer polishing than the preset level.

[0034] In some optional embodiments, determining whether the dressing disc needs to be replaced based on the fluctuation range and / or standard deviation of the dressing disc characteristics reflected by the target eddy current signal includes:

[0035] When using the fluctuation range to determine whether the trimmer needs to be replaced, if the fluctuation range is greater than the predetermined range threshold, it is determined that the trimmer needs to be replaced.

[0036] When using the standard deviation of fluctuation to determine whether the trimmer needs to be replaced, if the standard deviation of fluctuation is greater than the predetermined standard deviation threshold, it is determined that the trimmer needs to be replaced.

[0037] When using both the range and standard deviation of volatility to determine whether the trimmer needs to be replaced:

[0038] First, determine if the fluctuation range corresponding to the trimmed market characteristics is greater than a predetermined range threshold. If so, directly determine that the trimmed market needs to be replaced. If not, determine if the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than a predetermined standard deviation threshold. If the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than the predetermined standard deviation threshold, determine that the trimmed market needs to be replaced; or...

[0039] The comprehensive difference corresponding to the characteristics of the trimmed plate is calculated based on the fluctuation range and fluctuation standard deviation. When the comprehensive difference is greater than the predetermined comprehensive threshold, it is determined that the trimmed plate needs to be replaced.

[0040] In some optional embodiments, the range threshold is in the range of 0.35 mm to 0.5 mm; the standard deviation threshold is in the range of 0.05 mm to 0.1 mm.

[0041] A third aspect of this application provides a wafer processing method applied to a wafer polishing scenario where the impact of local defects on the wafer polishing yield is greater than a preset level. The method includes:

[0042] The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period.

[0043] The need to replace the dressing disc can be determined by the fluctuation range of the dressing disc characteristics reflected by the target eddy current signal; or, the need to replace the dressing disc can be determined by the fluctuation range and standard deviation of the dressing disc characteristics reflected by the target eddy current signal.

[0044] The characteristics of the dressing disk include its pose and / or shape.

[0045] A fourth aspect of this application provides a wafer processing method applied to a wafer polishing scenario where the influence of wafer thin film uniformity on wafer polishing yield is greater than a preset level. The method includes:

[0046] The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period.

[0047] The need to replace the dressing plate can be determined by the standard deviation of the fluctuation of the dressing plate characteristics reflected by the target eddy current signal; or, the need to replace the dressing plate can be determined by the range and standard deviation of the fluctuation of the dressing plate characteristics reflected by the target eddy current signal.

[0048] The characteristics of the dressing disk include its pose and / or shape.

[0049] A fifth aspect of this application provides a trimmer assembly, comprising:

[0050] Dressing disk, during the dressing process, the dressing disk rotates to cover the entire area of ​​the wafer polishing disk;

[0051] An eddy current sensor, embedded in the polishing disk, is used to acquire eddy current signals as the polishing disk rotates, and to send the eddy current signals to the corresponding controller; the eddy current signals are used to instruct the controller to execute the steps of the above-mentioned wafer processing method.

[0052] A sixth aspect of this application provides a trimmer detection component, comprising:

[0053] Eddy current sensors and controllers;

[0054] An eddy current sensor is embedded in the polishing disk to collect eddy current signals as the polishing disk rotates, and to send the eddy current signals to the controller; the controller is used to execute the steps of the wafer processing method described above.

[0055] A seventh aspect of this application provides a chemical mechanical polishing apparatus, comprising:

[0056] Polishing disc, bearing head, liquid supply device, and controller;

[0057] The carrier head loads the wafer to be polished and places it against the polishing pad above the polishing disk. The liquid supply device supplies polishing liquid between the polishing pad and the wafer. The controller is used to execute the steps of the wafer processing method described above.

[0058] An eighth aspect of this application provides an electronic device including a memory, a processor, and a computer program stored in the memory and running on the processor, wherein the processor executes the computer program to implement the steps of the wafer fabrication method described above.

[0059] A ninth aspect of this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the wafer fabrication method described above.

[0060] The beneficial effects of the embodiments of this application are as follows:

[0061] First, this embodiment of the application uses an eddy current sensor to detect the state of the dressing disc in the dresser. Compared with related technologies, since the eddy current sensor can be directly close to the working surface of the dressing disc-polishing pad inside the polishing disc, and the eddy current effect is sensitive to the distance, morphology, and material distribution of the metal conductor / high magnetic permeability material, using the eddy current signal of the eddy current sensor to detect the state of the dressing disc naturally eliminates the interference of the polishing pad and other influencing factors on the detection data, making the state detection of the dressing disc more accurate.

[0062] Secondly, considering that the wear of the dressing disc is gradual, in order to capture the small morphological distortions of the dressing disc in the early stage, this embodiment of the application also uses the rotary encoder signal of the dressing itself to divide the eddy current signal of the eddy current sensor, so as to extract the data of the complete rotation cycle for judging the state of the dressing disc, avoiding the data of multiple rotation cycles being mixed and averaged to cover up the initial wear signal, thereby ensuring that the state changes of the dressing disc can be warned in advance.

[0063] In addition, the embodiments of this application also quantify the comprehensive presentation results of the dressing disk's pose and shape characteristics through range and standard deviation, which can effectively determine the actual state of the dressing disk, such as wear and pose deviation.

[0064] In other words, the solution of this application embodiment can effectively determine the state of the dressing disk, thereby ensuring timely replacement of the dressing disk, thus avoiding the impact on the polishing pad and ensuring the stability of the wafer polishing effect. Attached Figure Description

[0065] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0066] Figure 1A structural diagram of a chemical mechanical polishing apparatus provided in an embodiment of this application;

[0067] Figure 2 A structural diagram of the dresser in a chemical mechanical polishing apparatus provided in an embodiment of this application;

[0068] Figure 3 This is a structural diagram of a wafer fabrication system provided in one embodiment of this application;

[0069] Figure 4 This is a schematic diagram of the operation of a wafer fabrication system provided in one embodiment of this application;

[0070] Figure 5 A schematic flowchart of a wafer fabrication method provided in an embodiment of this application;

[0071] Figure 6 A schematic flowchart of a wafer fabrication method provided in another embodiment of this application;

[0072] Figure 7 A schematic flowchart of a wafer fabrication method provided in another embodiment of this application;

[0073] Figure 8 A schematic block diagram of an electronic device provided in an embodiment of this application;

[0074] The components include a dressing device 100, a polishing disc 200, a bearing head 300, a liquid supply device 400, an eddy current sensor 500, a fixed base 101, a dressing arm 102, and a dressing disc 103. Detailed Implementation

[0075] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments in the specific implementation of this application should fall within the protection scope of the embodiments of this application.

[0076] To keep the drawings concise, each drawing only schematically shows the parts relevant to the disclosure; these do not represent the actual structure of the product. Furthermore, for ease of understanding, in some drawings, only one of components with the same structure or function is schematically shown, or only one is labeled. In this document, "one" not only means "only one," but can also mean "more than one," and "several" includes "two" and "more than two."

[0077] In this document, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0078] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0079] In the description of this embodiment, terms such as "upper," "lower," "left," and "right" are based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of description and simplification of operation, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0080] Furthermore, in the description of this application, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0081] It should be understood that, unless the context clearly states otherwise, the terms "comprising," "including," or "having" as used herein refer to the presence of an element, but do not exclude the presence or addition of one or more other elements. Furthermore, "comprising" and / or "including" as used herein specify the presence of shapes, numbers, steps, operations, members, elements, and / or combinations thereof, and do not exclude the presence or addition of one or more other shapes, numbers, operations, elements, and / or combinations thereof. Some embodiments of this application are described in detail below with reference to the accompanying drawings. Where there is no conflict between the embodiments, the following embodiments and features can be combined with each other. The steps in the following method embodiments are for illustrative purposes only and are not intended to limit this application.

[0082] To make the objectives, technical solutions, and advantages of this application clearer, the following description will be provided in conjunction with the accompanying drawings and specific embodiments.

[0083] Please refer to Figure 1 , Figure 1 The chemical mechanical polishing apparatus provided in this embodiment includes a polishing disc 200, a dresser 100, a polishing pad, a bearing head 300, a liquid supply device 400, and a controller. Figure 1 (Not shown in the image). The polishing pad is disposed on the surface of the polishing disk 200, and the polishing pad and polishing disk 200 rotate together; a movable support head 300 is disposed above the polishing pad, and the bottom of the support head 300 holds the wafer to be polished; a dresser 100 oscillates around a fixed point, and a dressing disk disposed on it rotates itself and applies a downward load to dress the surface of the polishing pad; a liquid supply device 400 is disposed above the polishing pad for distributing polishing liquid between the polishing pad and the wafer.

[0084] During the polishing operation, the support head 300 presses the wafer with the deposited layer against the surface of the polishing pad. The support head 300 drives the wafer and polishing pad to rotate in the same direction and reciprocate radially along the polishing disk 200. Simultaneously, as the polishing disk 200 rotates, the liquid supply device 400 sprays polishing liquid onto the surface of the polishing pad. Under the chemical action of the polishing liquid, the relative movement between the support head 300 and the polishing disk 200 causes friction between the wafer and the polishing pad to achieve polishing.

[0085] The dresser 100 is used to dress the surface of the polishing pad and remove impurity particles remaining on the surface of the polishing pad, such as abrasive particles in the polishing fluid and waste materials that have fallen off the wafer surface.

[0086] In one embodiment, as the dresser 100 is used for an extended period, the dressing disk of the dresser 100 may wear out or tilt due to changes in the pivot of the dresser 100 or the condition of the dressing disk itself. That is, as the dresser 100 is used for a longer period, the position and shape of the dressing disk may change, affecting the dressing effect of the polishing pad and consequently the wafer polishing effect. Therefore, this embodiment uses a wafer processing system to monitor the condition of the dressing disk to ensure timely replacement of the dressing disk, effectively reducing the impact on the wafer polishing effect.

[0087] refer to Figures 2-4 , Figure 2 This is a structural diagram of the trimmer provided in this embodiment. Figure 3 This is a structural diagram of the wafer fabrication system provided in this embodiment; Figure 4 This is a schematic diagram of the wafer processing system provided in this embodiment. The wafer processing system includes a polishing disk 200, a dresser 100, an eddy current sensor 500, and a controller (…). Figures 2-4 (Not shown in the text).

[0088] The dressing device 100 includes a fixed base 101, a dressing arm 102, and a dressing disc 103. During the dressing process, the dressing arm 102 pivots and the dressing disc 103 rotates so that the dressing area of ​​the dressing disc 103 covers the entire area of ​​the polishing disc 200.

[0089] An eddy current sensor 500 is embedded in the polishing disk 200 and is used to collect eddy current signals as the polishing disk 200 rotates.

[0090] The controller is used to divide the eddy current signal according to the rotation cycle of the dressing disk 103 using the rotary encoder signal corresponding to the dressing device 100, so as to extract the target eddy current signal corresponding to the dressing disk 103 within its rotation cycle; and to determine whether the dressing disk 103 needs to be replaced based on the fluctuation range and / or fluctuation standard deviation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose characteristics and / or shape characteristics of the dressing disk 103.

[0091] In this embodiment, the eddy current sensor 500 rotates with the polishing disc 200. When the eddy current sensor 500 rotates to below the dresser 100, it can collect the eddy current signal corresponding to the dresser 100 and send the eddy current signal to the controller so that the characteristics of the dresser disc can be calculated based on the eddy current signal, and the dresser disc 103 can be determined as to whether it needs to be replaced based on the characteristics of the dresser disc.

[0092] When the eddy current sensor 500 operates during the wafer polishing process, the eddy current signal acquired by the sensor 500 will contain wafer-related noise signals and other magnetic field interference signals. At this time, after receiving the eddy current signal, the controller can use the rotary encoder signal corresponding to the dresser 100 to divide the acquired eddy current signal according to the rotation cycle of the dressing disk 103. That is, it reads the rotary encoder signal corresponding to the dresser 100 to obtain the position information of the dresser 100, and then correlates the eddy current signal acquired at each moment with the position information of the dresser 100. This division process can eliminate wafer-related noise signals. Finally, filtering and other processing of the obtained eddy current signals from multiple rotation cycles yields interference-free eddy current signals.

[0093] Among them, the eddy current sensor 500 can adopt the structure of a coil array probe. When acquiring signals, multiple independent coil units of the coil array probe can simultaneously detect the sub-regions of the trimming disk 103, thereby realizing the determination of the trimming disk status within a single rotation cycle.

[0094] In this embodiment, the target eddy current signal corresponding to a specific rotation cycle can be selected for analysis to obtain the characteristics of the dressing disk. From the perspective of time, the specific rotation cycle can be the most recent rotation cycle or a specified rotation cycle; from the perspective of quantity, the specific rotation cycle can be a single rotation cycle or multiple rotation cycles.

[0095] During the dressing process of dressing disk 103, changes in the pose and / or shape of dressing disk 103, such as tilting or wear, will cause changes in the distance between various points on the dressing surface of dressing disk 103 and eddy current sensor 500, as well as the tilt angle of various areas of the dressing surface relative to the horizontal plane. Therefore, the above-mentioned distances and / or tilt angles can be used as dressing disk characteristics, and the range and / or standard deviation of the fluctuation of dressing disk characteristics can be used to determine whether dressing disk 103 needs to be replaced.

[0096] In one embodiment, the controller specifically determines the trimming disk characteristics through the following steps:

[0097] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor, and the distance is determined as a feature of the dressing disk; and / or,

[0098] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor. The distance is used to calculate the tilt angle of each area of ​​the dressing surface relative to the horizontal plane, and the tilt angle is determined as the feature of the dressing disk.

[0099] In this embodiment, the signal strength of the target eddy current signal is usually represented by the voltage amplitude. The magnitude of the voltage amplitude is related to the distance between the trimming surface and the sensor. According to the mathematical model between the voltage amplitude and the distance, the eddy current amplitude in the target eddy current signal can be converted into the distance between each point on the trimming surface corresponding to the trimming disk and the eddy current sensor. The distance between each point on the trimming surface and the eddy current sensor is used as the feature of the trimming disk.

[0100] Alternatively, the trimming surface can be divided into multiple regions. Once the distance data of each point on the trimming surface is obtained, this distance data can be substituted into a three-dimensional coordinate system. Based on the division of each region of the trimming surface, the tilt angle of each region relative to the horizontal plane can be calculated.

[0101] The number of regions to be divided on the trimmed surface can be determined based on the required precision of the wafer polishing process. Higher precision requires more regions; that is, the number of regions to be divided on the trimmed surface is positively correlated with the required precision of the wafer polishing process. Region division methods can include concentric ring region division, grid division, or other feasible methods. Specifically, using the concentric ring region division method can yield multiple regions arranged sequentially from the inside out, consisting of multiple concentric rings and a central circle.

[0102] The fluctuation range represents the difference between the maximum and minimum values ​​of the dressing disk characteristics reflected by the target eddy current signal within its corresponding rotation cycle, that is, the distance difference between the highest and lowest points on the dressing surface of the dressing disk. The magnitude of the fluctuation range is the result of the combined effect of the dressing disk's shape and pose. In this embodiment, the distances between each point on the dressing surface and the eddy current sensor within the rotation cycle can be sorted, and the difference between the maximum and minimum distances can be used as the fluctuation range; or, the tilt angles of each region of the dressing surface relative to the horizontal plane can be sorted, and the difference between the maximum and minimum tilt angles can be used as the fluctuation range.

[0103] The standard deviation of fluctuation represents the overall undulation or roughness of the surface profile of the dressing surface corresponding to the dressing disk. The magnitude of the standard deviation of fluctuation is the result of the combined effect of the dressing disk's shape and pose. In this embodiment, the standard deviation of the distances between each point on the dressing surface and the eddy current sensor during the rotation cycle can be calculated, and this standard deviation can be used as the standard deviation of fluctuation; or, the standard deviation of the tilt angle of each region of the dressing surface relative to the horizontal plane can be calculated, and this standard deviation can be used as the standard deviation of fluctuation.

[0104] Based on the above, it can be concluded that the change in fluctuation range and / or fluctuation standard deviation over multiple periods can determine whether the dressing disk needs to be replaced, and a new dressing disk should be replaced in a timely manner when replacement is required to avoid affecting the polishing effect of the wafer.

[0105] From the above, it can be concluded that, firstly, this embodiment uses an eddy current sensor to detect the state of the dressing disc in the dresser. Compared to related technologies, since the eddy current sensor can be directly close to the surface of the dressing disc-polishing pad interaction inside the polishing disc, and the eddy current effect is sensitive to the distance, morphology, and material distribution of the metal conductor / high permeability material, using the eddy current signal of the eddy current sensor to detect the state of the dressing disc naturally eliminates the interference of the polishing pad and other influencing factors on the detection data, making the state detection of the dressing disc more accurate.

[0106] Secondly, considering that the wear of the dressing disc is gradual, in order to capture the small morphological distortions of the dressing disc in the early stage, this embodiment of the application also uses the rotary encoder signal of the dressing itself to divide the eddy current signal of the eddy current sensor, so as to extract the data of the complete rotation cycle for judging the state of the dressing disc, avoiding the data of multiple rotation cycles being mixed and averaged to cover up the initial wear signal, thereby ensuring that the state changes of the dressing disc can be warned in advance.

[0107] In addition, the embodiments of this application also quantify the comprehensive presentation results of the dressing disk's pose and shape characteristics through range and standard deviation, which can effectively determine the actual state of the dressing disk, such as wear and pose deviation.

[0108] In other words, the solution of this application embodiment can effectively determine the state of the dressing disk, thereby ensuring timely replacement of the dressing disk, thus avoiding the impact on the polishing pad and ensuring the stability of the wafer polishing effect.

[0109] In one embodiment of this application, the controller is further configured to:

[0110] When the current wafer polishing scenario falls under the first category, the fluctuation range is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the fluctuation standard deviation are used to determine whether the dressing pad needs to be replaced. In the first category, the impact of local defects on the wafer polishing yield is greater than the preset level.

[0111] When the current wafer polishing scenario falls under the second category, the standard deviation of the fluctuation is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the standard deviation of the fluctuation are used to determine whether the dressing pad needs to be replaced. In the second category, the thin film uniformity of the wafer has a greater impact on the yield of wafer polishing than the preset level.

[0112] In this embodiment, the first type of scenario can be a "defect-driven" scenario. In this scenario, local defects on the wafer (such as scratches, pits, or particle residue) have a significant impact on circuit performance, and the impact of local defects on the wafer polishing yield is greater than the preset level, easily reducing the yield and even causing the entire wafer to fail. The reason for the first type of scenario is that the dressing pad itself has local defects. For example, when the diamond abrasive tip of the dressing pad is worn or falls off, it is easy to cause the polishing pad to fail to form the expected "fuzz" or "groove" in the corresponding area, which in turn causes local depressions or high points to be generated on the wafer during the polishing process, affecting the polishing effect.

[0113] For example, the first type of scenario could be deep trench isolation, low-k dielectric polishing, or copper interconnect polishing. In deep trench isolation or low-k dielectric polishing scenarios, even tiny pits or scratches on the wafer can cause the dielectric layer to crack, leading to short circuits between metals or circuit breakdown, and ultimately causing chip malfunction. In copper interconnect polishing scenarios, microscopic defects on the wafer often cause sudden changes in resistance or localized overheating, directly affecting device performance.

[0114] Therefore, if the current wafer polishing scenario belongs to the first type of scenario, the embodiments of this application can use the fluctuation range, or simultaneously use the fluctuation range and fluctuation standard deviation, to determine whether the dressing disk needs to be replaced. Because:

[0115] First, as an extreme value measurement index, the fluctuation range in this application uses the fluctuation range corresponding to the target eddy current signal to quickly capture local defects on the repair plate and trigger early warning or replacement instructions in a timely manner.

[0116] Second, if the standard deviation of fluctuation is used for judgment, when the number of local outliers is small, the change in the standard deviation of fluctuation is not significant, which may lead to the failure to trigger early warning or replacement instructions in a timely manner, affecting the best time to replace the repair pad, and thus affecting the subsequent wafer polishing process.

[0117] The second scenario can be the "uniformity-dominated" scenario. In this scenario, the uniformity of the wafer's thin film has a greater impact on the wafer polishing yield than the preset level, easily causing the capacitance value of capacitors to deviate from the rated capacitance value, affecting the read and write stability of the memory it resides in. The reason for this second scenario is that the uneven distribution of diamond abrasive in the dresser results in an uneven distribution of the pile height formed by the polishing pad across the entire surface. This leads to uneven distribution of the contact area and contact pressure of the wafer across the entire polishing pad surface, resulting in inconsistent wafer thin film thickness.

[0118] For example, the second category of scenarios could include mutual capacitance polishing, capacitor array polishing, and multilayer dielectric layer or stress buffer layer polishing. In mutual capacitance polishing or capacitor array polishing scenarios, if the thin film thickness distribution of the wafer is uneven, even if the surface appears smooth and without obvious defects, it will lead to capacitance deviations, affecting the read and write stability of the memory. In multilayer dielectric layer or stress buffer layer polishing scenarios, uneven thin film thickness on the wafer can lead to stress concentration or electrical characteristic mismatch, thereby affecting the long-term reliability of the device.

[0119] Therefore, if the current wafer polishing scenario falls under the second category, the standard deviation of the fluctuation, or both the range and standard deviation of the fluctuation, can be used to determine whether the dressing pad needs to be replaced. This is because the standard deviation of the fluctuation can sensitively reflect the dispersion of the data. Even if the range does not change significantly, the standard deviation can effectively measure the change in overall volatility, so as to trigger early warnings or replacement instructions in a timely manner and improve the subsequent wafer polishing effect.

[0120] The preset level in this embodiment can be manually set based on practical experience. The impact of local defects on the wafer polishing yield can be determined by the defect density per unit area of ​​the wafer, and the correspondence between the defect density per unit area and the impact on the wafer polishing yield can be obtained based on practical experience data. The impact of wafer thin film uniformity on the wafer polishing yield can be manually determined based on practical experience.

[0121] This embodiment determines whether the dressing pad is damaged by selecting judgment indicators based on the specific wafer polishing scenario. This allows for effective and timely replacement of the dressing pad, thereby avoiding any impact on the polishing pad and ensuring the stability of the wafer polishing effect.

[0122] In one embodiment of this application, the controller determines whether the trimming disc needs to be replaced through the following steps:

[0123] When using the fluctuation range to determine whether the trimmer needs to be replaced, if the fluctuation range is greater than the predetermined range threshold, it is determined that the trimmer needs to be replaced.

[0124] When using the standard deviation of fluctuation to determine whether the trimmer needs to be replaced, if the standard deviation of fluctuation is greater than the predetermined standard deviation threshold, it is determined that the trimmer needs to be replaced.

[0125] When using both the range and standard deviation of volatility to determine whether the trimmer needs to be replaced:

[0126] First, determine if the fluctuation range corresponding to the trimmed market characteristics is greater than a predetermined range threshold. If so, directly determine that the trimmed market needs to be replaced. If not, determine if the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than a predetermined standard deviation threshold. If the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than the predetermined standard deviation threshold, determine that the trimmed market needs to be replaced; or...

[0127] The comprehensive difference corresponding to the characteristics of the trimmed plate is calculated based on the fluctuation range and fluctuation standard deviation. When the comprehensive difference is greater than the predetermined comprehensive threshold, it is determined that the trimmed plate needs to be replaced.

[0128] In one embodiment, the range threshold is in the range of 0.35 mm to 0.5 mm; the standard deviation threshold is in the range of 0.05 mm to 0.1 mm.

[0129] The range threshold can be obtained by measuring the fluctuation range of multiple historical correction plates. The specific method is as follows:

[0130] Each time a dressing pad reaches the end of its service life, its fluctuation range is recorded. Multiple fluctuation ranges are statistically analyzed to obtain the range threshold. The service life of the dressing pad can be determined based on the polishing pad's life or the number of wafers processed using chemical mechanical polishing equipment. The method for determining the standard deviation threshold range is similar to that for determining the range threshold range, and will not be elaborated here.

[0131] In one embodiment, the controller calculates the overall difference corresponding to the trim disc feature by weighted summation;

[0132] The weights corresponding to the fluctuation range and fluctuation standard deviation are determined by the wafer polishing scenario.

[0133] In this embodiment, the comprehensive threshold can be calculated using a weighted fusion algorithm based on the historical fluctuation range and fluctuation standard deviation. Specifically, the historical fluctuation range and fluctuation standard deviation are normalized to obtain a normalized baseline value for the fluctuation range and a normalized baseline value for the fluctuation standard deviation, respectively. The weight coefficients of the above two parameters are determined based on the wafer polishing scenario, and the comprehensive threshold is calculated using a weighted fusion algorithm.

[0134] When the wafer polishing scenario belongs to the first type of scenario, the weight coefficient corresponding to the fluctuation range is assigned to be greater than the weight coefficient corresponding to the fluctuation standard deviation; when the wafer polishing scenario belongs to the second type of scenario, the weight coefficient corresponding to the fluctuation standard deviation is assigned to be greater than the weight coefficient corresponding to the fluctuation range; wherein, the sum of the weight coefficients corresponding to the fluctuation range and the fluctuation standard deviation is 1.

[0135] This embodiment provides different judgment conditions to determine whether the dressing disk needs to be replaced, which can meet the requirements of different wafer polishing scenarios and effectively reduce the false positive rate and false negative rate. At the same time, the method of using the fluctuation range and fluctuation standard deviation to perform weighted summation to determine whether the dressing disk needs to be replaced provides the system with higher robustness, thereby effectively judging the status of the dressing disk and ensuring timely replacement of the dressing disk.

[0136] Corresponding to the wafer fabrication system in the above embodiment, Figure 5 This is a schematic flowchart of a wafer fabrication method provided in an embodiment of this application. The method may include: S101~S102.

[0137] S101: The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period.

[0138] The method of dividing the eddy current signal according to the rotation period of the dressing disk of the dresser in this step is the same as described in the above embodiment, and will not be repeated here.

[0139] S102: Determine whether the dressing disk needs to be replaced based on the fluctuation range and / or standard deviation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose characteristics and / or morphological characteristics of the dressing disk.

[0140] In one embodiment of this application, the trimming disc features are determined through the following steps:

[0141] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor, and the distance is determined as a feature of the dressing disk; and / or,

[0142] The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor. The distance is used to calculate the tilt angle of each area of ​​the dressing surface relative to the horizontal plane, and the tilt angle is determined as the feature of the dressing disk.

[0143] In one embodiment of this application, determining whether a dressing disc needs to be replaced based on the fluctuation range and / or standard deviation of the dressing disc characteristics reflected by the target eddy current signal includes:

[0144] When using the fluctuation range to determine whether the trimmer needs to be replaced, if the fluctuation range is greater than the predetermined range threshold, it is determined that the trimmer needs to be replaced.

[0145] When using the standard deviation of fluctuation to determine whether the trimmer needs to be replaced, if the standard deviation of fluctuation is greater than the predetermined standard deviation threshold, it is determined that the trimmer needs to be replaced.

[0146] When using both the range and standard deviation of volatility to determine whether the trimmer needs to be replaced:

[0147] First, determine if the fluctuation range corresponding to the trimmed market characteristics is greater than a predetermined range threshold. If so, directly determine that the trimmed market needs to be replaced. If not, determine if the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than a predetermined standard deviation threshold. If the fluctuation standard deviation corresponding to the trimmed market characteristics is greater than the predetermined standard deviation threshold, determine that the trimmed market needs to be replaced; or...

[0148] The comprehensive difference corresponding to the characteristics of the trimmed plate is calculated based on the fluctuation range and fluctuation standard deviation. When the comprehensive difference is greater than the predetermined comprehensive threshold, it is determined that the trimmed plate needs to be replaced.

[0149] In one embodiment of this application, the wafer fabrication method further includes:

[0150] When the current wafer polishing scenario falls under the first category, the fluctuation range is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the fluctuation standard deviation are used to determine whether the dressing pad needs to be replaced. In the first category, the impact of local defects on the wafer polishing yield is greater than the preset level.

[0151] When the current wafer polishing scenario falls under the second category, the standard deviation of the fluctuation is used to determine whether the dressing pad needs to be replaced, or both the fluctuation range and the standard deviation of the fluctuation are used to determine whether the dressing pad needs to be replaced. In the second category, the thin film uniformity of the wafer has a greater impact on the yield of wafer polishing than the preset level.

[0152] In one embodiment of this application, the range threshold is 0.35mm to 0.5mm; the standard deviation threshold is 0.05mm to 0.1mm.

[0153] As can be seen from the above, the wafer processing method provided in this embodiment can be applied to different wafer polishing scenarios. This embodiment utilizes the eddy current signal from an eddy current sensor for dressing pad status detection, which naturally eliminates interference from the polishing pad and other influencing factors on the detection data, making the dressing pad status detection more accurate. Furthermore, based on different wafer polishing scenarios or the parameters corresponding to the selected dressing pad, different judgment methods are used to determine whether the dressing pad needs to be replaced. This effectively judges the dressing pad status, ensuring timely replacement and avoiding impact on the polishing pad, thus guaranteeing the stability of the wafer polishing effect.

[0154] Corresponding to the wafer fabrication system in the above embodiment, Figure 6 This is a schematic flowchart of a wafer processing method provided in an embodiment of this application. The method is applied to a wafer polishing scenario where the impact of local defects on the yield of wafer polishing is greater than a preset level. The method may include: S201~S202.

[0155] S201: The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period.

[0156] S202: Determine whether the dressing disk needs to be replaced based on the fluctuation range of the dressing disk characteristics reflected by the target eddy current signal; or, determine whether the dressing disk needs to be replaced based on the fluctuation range and standard deviation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose characteristics and / or morphological characteristics of the dressing disk.

[0157] The methods for dividing the eddy current signal according to the rotation period of the dressing disk in S201 and S202, and the various implementation methods for determining whether the dressing disk needs to be replaced based on the fluctuation range of the dressing disk characteristics reflected by the target eddy current signal, or by simultaneously using the fluctuation range and standard deviation of the dressing disk characteristics, are described in the above embodiments and will not be repeated here.

[0158] Corresponding to the wafer fabrication system in the above embodiment, Figure 7 This is a schematic flowchart of a wafer processing method provided in an embodiment of the present application. It can be executed by an electronic device. The method is applied to a wafer polishing scenario where the influence of the thin film uniformity of the wafer on the yield of wafer polishing is greater than a preset level. The method may include: S301~S302.

[0159] S301: The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period.

[0160] S302: Determine whether the dressing disk needs to be replaced based on the standard deviation of the fluctuation of the dressing disk characteristics reflected by the target eddy current signal; or, determine whether the dressing disk needs to be replaced based on the range and standard deviation of the fluctuation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose characteristics and / or morphological characteristics of the dressing disk.

[0161] The methods for dividing the eddy current signal according to the rotation period of the dressing disk in S301 and S302, and the various implementation methods for determining whether the dressing disk needs to be replaced based on the standard deviation of the fluctuation of the dressing disk characteristics reflected by the target eddy current signal, or by simultaneously using the fluctuation range and fluctuation standard deviation of the dressing disk characteristics, are described in the above embodiments and will not be repeated here.

[0162] One embodiment of this application provides a trimmer assembly, including:

[0163] Dressing disk, during the dressing process, the dressing disk rotates to cover the entire area of ​​the wafer polishing disk;

[0164] An eddy current sensor, embedded in the polishing disk, is used to acquire eddy current signals as the polishing disk rotates, and to send the eddy current signals to the corresponding controller; the eddy current signals are used to instruct the controller to execute the steps of the above-mentioned wafer processing method.

[0165] The dresser assembly in this embodiment includes an eddy current sensor, which can acquire eddy current signals in real time during wafer polishing. Based on the real-time acquired eddy current signals, the state of the dresser pad is judged, so that the dresser pad can be replaced in a timely manner when it is determined that it needs to be replaced, thereby avoiding the impact on the polishing pad and ensuring the stability of the wafer polishing effect.

[0166] One embodiment of this application provides a trimmer detection component, including:

[0167] Eddy current sensors and controllers;

[0168] An eddy current sensor is embedded in the polishing disk to collect eddy current signals as the polishing disk rotates, and to send the eddy current signals to the controller; the controller is used to execute the steps of the wafer processing method described above.

[0169] In this embodiment, the eddy current sensor in the dresser detection component can acquire eddy current signals in real time and send the acquired signals to the corresponding controller. This allows the controller to determine the dresser disk's status based on the eddy current signals, thereby identifying dresser disks that need timely replacement and issuing warnings. The dresser detection component provided in this embodiment, through the eddy current sensor and controller, enables real-time monitoring of the dresser disk's status, allowing for timely replacement of the dresser disk, avoiding impact on the polishing pad, and ensuring the stability of the wafer polishing effect.

[0170] See Figure 8 , Figure 8 This is a schematic block diagram of an electronic device provided according to an embodiment of this application. Figure 8 The electronic device 800 in this embodiment may include one or more processors 801, one or more input devices 802, one or more output devices 803, and one or more memories 804. The processors 801, input devices 802, output devices 803, and memories 804 communicate with each other via a communication bus 805. The memory 804 stores computer programs, including program instructions. The processor 801 executes the program instructions stored in the memory 804. Specifically, the processor 801 is configured to invoke the program instructions to execute the steps of the wafer fabrication method described above.

[0171] It should be understood that, in the embodiments of this application, the processor 801 may be a central processing unit (CPU), but it may also be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor.

[0172] Input device 802 may include a touchpad, a fingerprint sensor (for collecting the user's fingerprint information and fingerprint orientation information), a microphone, etc., and output device 803 may include a display (LCD, etc.), a speaker, etc.

[0173] The memory 804 may include read-only memory and random access memory, and provides instructions and data to the processor 801. A portion of the memory 804 may also include non-volatile random access memory. For example, the memory 804 may also store device type information.

[0174] In specific implementations, the processor 801, input device 802, and output device 803 described in the embodiments of this application can execute the implementation method described in the wafer processing system provided in the embodiments of this application, or they can execute the implementation method of the electronic device described in the embodiments of this application, which will not be repeated here.

[0175] In another embodiment of this application, a computer-readable storage medium is provided. This computer-readable storage medium stores a computer program, which includes program instructions. When executed by a processor, the program instructions implement all or part of the processes in the methods described above. Alternatively, the computer program can instruct related hardware to complete the process. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include any entity or device capable of carrying computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium, etc.

[0176] The computer-readable storage medium can be an internal storage unit of the electronic device in any of the foregoing embodiments, such as a hard disk or memory of the electronic device. The computer-readable storage medium can also be an external storage device of the electronic device, such as a plug-in hard disk, smart media card (SMC), secure digital card (SD), flash card, etc., equipped on the electronic device. Furthermore, the computer-readable storage medium can include both internal and external storage units of the electronic device. The computer-readable storage medium is used to store computer programs and other programs and data required by the electronic device. The computer-readable storage medium can also be used to temporarily store data that has been output or will be output.

[0177] This application provides a computer program product, which includes computer-executable instructions or a computer program. The computer-executable instructions or computer program are stored in a computer-readable storage medium. The processor of an electronic device reads the computer-executable instructions from the computer-readable storage medium and executes the computer-executable instructions, causing the electronic device to perform the wafer fabrication method described in this application embodiment.

[0178] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this application.

[0179] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the electronic devices and units described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0180] In the several embodiments provided in this application, it should be understood that the disclosed electronic devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces or units, or it may be an electrical, mechanical, or other form of connection.

[0181] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of the embodiments of this application, depending on actual needs.

[0182] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0183] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A wafer fabrication system, characterized in that, include: Polishing disc; A dressing device, comprising a dressing arm and a dressing disc, wherein during the dressing process the dressing arm pivots and the dressing disc rotates such that the dressing area of ​​the dressing disc covers the entire area of ​​the polishing disc. An eddy current sensor is embedded in the polishing disk to collect eddy current signals as the polishing disk rotates. The controller is configured to divide the eddy current signal according to the rotation cycle of the dressing disk using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal of the dressing disk within its rotation cycle; and to determine whether the dressing disk needs to be replaced based on the fluctuation range and / or fluctuation standard deviation of the dressing disk characteristics reflected by the target eddy current signal; wherein, the dressing disk characteristics include the pose characteristics and / or morphological characteristics of the dressing disk; When the current wafer polishing scenario belongs to the first type of scenario, the fluctuation range is used to determine whether the dressing disk needs to be replaced, or the fluctuation range and the fluctuation standard deviation are used simultaneously to determine whether the dressing disk needs to be replaced; in the first type of scenario, the impact of local defects of the wafer on the yield of wafer polishing is greater than the preset level. When the current wafer polishing scenario belongs to the second type of scenario, the standard deviation of the fluctuation is used to determine whether the dressing disk needs to be replaced, or the fluctuation range and the standard deviation of the fluctuation are used simultaneously to determine whether the dressing disk needs to be replaced; in the second type of scenario, the thin film uniformity of the wafer has a greater impact on the yield of wafer polishing than the preset degree.

2. The wafer processing system as described in claim 1, characterized in that, The controller specifically determines the characteristics of the trimming disc through the following steps: The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor, and the distance is determined as the feature of the dressing disk; and / or, The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor. The distance is used to calculate the tilt angle of each region of the dressing surface relative to the horizontal plane, and the tilt angle is determined as the feature of the dressing disk.

3. The wafer processing system as described in claim 2, characterized in that, The controller determines whether the trimming disc needs to be replaced through the following steps: When using the fluctuation range to determine whether the trimming disc needs to be replaced, if the fluctuation range is greater than a predetermined range threshold, then it is determined that the trimming disc needs to be replaced. When using the standard deviation of fluctuation to determine whether the trimming disc needs to be replaced, if the standard deviation of fluctuation is greater than a predetermined standard deviation threshold, then it is determined that the trimming disc needs to be replaced. When simultaneously using the fluctuation range and the fluctuation standard deviation to determine whether the trimming disc needs to be replaced: First, determine whether the fluctuation range corresponding to the trimming plate characteristic is greater than a predetermined range threshold. If so, directly determine that the trimming plate needs to be replaced; if not, determine whether the fluctuation standard deviation corresponding to the trimming plate characteristic is greater than a predetermined standard deviation threshold. If the fluctuation standard deviation corresponding to the trimming plate characteristic is greater than the predetermined standard deviation threshold, determine that the trimming plate needs to be replaced; or... The comprehensive difference corresponding to the characteristics of the trimming plate is calculated based on the fluctuation range and fluctuation standard deviation, and the trimming plate needs to be replaced when the comprehensive difference is greater than a predetermined comprehensive threshold.

4. The wafer processing system as described in claim 3, characterized in that, The controller calculates the comprehensive difference corresponding to the trimming disc feature by weighted summation. The weights corresponding to the fluctuation range and fluctuation standard deviation are determined by the wafer polishing scenario.

5. The wafer processing system as described in claim 3, characterized in that, The range of the range threshold is 0.35mm to 0.5mm; the range of the standard deviation threshold is 0.05mm to 0.1mm.

6. A wafer fabrication method, characterized in that, include: The eddy current signal acquired by the eddy current sensor during the rotation of the polishing disc is divided according to the rotation period of the dressing disc of the dressing device using the rotary encoder signal corresponding to the dressing device, so as to extract the target eddy current signal corresponding to the dressing disc within its rotation period. The need for replacement of the dressing disk is determined based on the fluctuation range and / or standard deviation of the dressing disk characteristics reflected by the target eddy current signal; the dressing disk characteristics include the pose and / or morphological characteristics of the dressing disk; wherein... When the current wafer polishing scenario belongs to the first type of scenario, the fluctuation range is used to determine whether the dressing disk needs to be replaced, or the fluctuation range and the fluctuation standard deviation are used simultaneously to determine whether the dressing disk needs to be replaced; in the first type of scenario, the impact of local defects of the wafer on the yield of wafer polishing is greater than the preset level. When the current wafer polishing scenario belongs to the second type of scenario, the standard deviation of the fluctuation is used to determine whether the dressing disk needs to be replaced, or the fluctuation range and the standard deviation of the fluctuation are used simultaneously to determine whether the dressing disk needs to be replaced; in the second type of scenario, the thin film uniformity of the wafer has a greater impact on the yield of wafer polishing than the preset degree.

7. The wafer fabrication method as described in claim 6, characterized in that, The characteristics of the trimming disc are determined by the following steps: The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor, and the distance is determined as the feature of the dressing disk; and / or, The target eddy current signal is converted into the distance between each point on the dressing surface corresponding to the dressing disk and the eddy current sensor. The distance is used to calculate the tilt angle of each region of the dressing surface relative to the horizontal plane, and the tilt angle is determined as the feature of the dressing disk.

8. The wafer fabrication method as described in claim 6, characterized in that, The step of determining whether the dressing disc needs to be replaced based on the fluctuation range and / or standard deviation of the dressing disc characteristics reflected by the target eddy current signal includes: When using the fluctuation range to determine whether the trimming disc needs to be replaced, if the fluctuation range is greater than a predetermined range threshold, then it is determined that the trimming disc needs to be replaced. When using the standard deviation of fluctuation to determine whether the trimming disc needs to be replaced, if the standard deviation of fluctuation is greater than a predetermined standard deviation threshold, then it is determined that the trimming disc needs to be replaced. When simultaneously using the fluctuation range and the fluctuation standard deviation to determine whether the trimming disc needs to be replaced: First, determine whether the fluctuation range corresponding to the trimming plate characteristic is greater than a predetermined range threshold. If so, directly determine that the trimming plate needs to be replaced; if not, determine whether the fluctuation standard deviation corresponding to the trimming plate characteristic is greater than a predetermined standard deviation threshold. If the fluctuation standard deviation corresponding to the trimming plate characteristic is greater than the predetermined standard deviation threshold, determine that the trimming plate needs to be replaced; or... The comprehensive difference corresponding to the characteristics of the trimming plate is calculated based on the fluctuation range and fluctuation standard deviation, and the trimming plate needs to be replaced when the comprehensive difference is greater than a predetermined comprehensive threshold.

9. The wafer fabrication method as described in claim 8, characterized in that, The range of the range threshold is 0.35mm to 0.5mm; the range of the standard deviation threshold is 0.05mm to 0.1mm.

10. A trimmer assembly, characterized in that, include: A dressing disk, which rotates during the dressing process to cover the entire area of ​​the wafer polishing disk; An eddy current sensor, embedded in the polishing disk, is used to acquire eddy current signals as the polishing disk rotates, and to send the eddy current signals to a corresponding controller; the eddy current signals are used to instruct the controller to perform the steps of the method as described in any one of claims 6-9.

11. A trimmer detection assembly, characterized in that, include: Eddy current sensors and controllers; The eddy current sensor is embedded in the polishing disk and is used to acquire eddy current signals as the polishing disk rotates, and to send the eddy current signals to the controller; the controller is used to perform the steps of the method as described in any one of claims 6-9.

12. A chemical mechanical polishing apparatus, characterized in that, include: Polishing disc, bearing head, liquid supply device, and controller; The bearing head loads the wafer to be polished and abuts it against the polishing pad above the polishing disk, the liquid supply device supplies polishing liquid between the polishing pad and the wafer, and the controller is used to perform the steps of the method as described in any one of claims 6-9.

13. An electronic device comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method as described in any one of claims 6-9.

14. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method as described in any one of claims 6-9.

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