Photoluminescence spatial distribution monitoring device and method in perovskite thin film crystallization process

By using a photoluminescence spatial distribution monitoring device to monitor the crystallization process of perovskite thin films in real time and generate a two-dimensional spatial distribution map, the problem of not being able to monitor the dynamic evolution of perovskite thin film crystallization in real time in existing technologies is solved, and efficient process optimization and thin film uniformity assessment are achieved.

CN121899036APending Publication Date: 2026-04-21CNNC OPTOELECTRONICS TECH (SHANGHAI) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-02
Publication Date
2026-04-21

AI Technical Summary

Technical Problem

Existing technologies cannot monitor the dynamic evolution of perovskite thin film crystallization in real time, resulting in a lack of real-time and comprehensive feedback for process optimization.

Method used

A photoluminescence spatial distribution monitoring device for the perovskite thin film crystallization process is adopted, including a sample crystallization control unit, an excitation light source unit, an imaging hyperspectral camera, and signal processing and monitoring equipment. The device acquires a cubic sequence of photoluminescence (PL) spectral data on the surface of the perovskite thin film in real time, generates a two-dimensional spatial distribution map, and feeds back to optimize the crystallization process parameters.

Benefits of technology

It enables real-time, non-contact, and non-destructive monitoring of the crystallization process of perovskite thin films, and can continuously and rapidly acquire two-dimensional spatial and one-dimensional spectral information, providing dynamic data support for process optimization and improving film uniformity assessment and crystallization control.

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Abstract

The invention relates to a device and a method for monitoring photoluminescence spatial distribution in a perovskite thin film crystallization process. The device comprises a sample crystallization control unit, an excitation light source unit, an imaging hyperspectral camera and signal processing and monitoring equipment, the sample crystallization control unit is arranged on an external production table; the excitation light source unit can adjust the light emitting angle; a shooting lens of the imaging hyperspectral camera is arranged towards the sample crystallization control unit, and PL signals are collected and transmitted to the signal processing and monitoring equipment, so that the problems that dynamic evolution information in the spatial dimension in the perovskite crystallization process cannot be captured in the methods, and real-time and comprehensive feedback cannot be provided for process optimization are solved.
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Description

Technical Field

[0001] This invention relates to the field of perovskite technology, and in particular to a device and method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films. Background Technology

[0002] The crystallization of perovskite thin films is a complex and dynamic process involving multiple stages such as nucleation, growth, and phase transformation, and is greatly influenced by process parameters such as annealing temperature, time, and atmosphere. Currently, the quality assessment of perovskite thin films largely relies on offline characterization after the process is completed, such as fluorescence microscopy, scanning electron microscopy, and single-point PL spectroscopy. These methods cannot capture the dynamic evolution information during the crystallization process and cannot provide real-time and comprehensive feedback for process optimization. Summary of the Invention

[0003] In view of this, this application provides a photoluminescence spatial distribution monitoring device for the crystallization process of perovskite thin films, including a sample crystallization control unit, an excitation light source unit, an imaging hyperspectral camera, and a signal processing and monitoring device; the sample crystallization control unit is disposed on an external production stage; the excitation light source unit is disposed above the sample crystallization control unit, and the excitation light source unit is adjustable in light emission angle; the imaging hyperspectral camera is disposed above the sample crystallization control unit, and there is a preset distance between the imaging hyperspectral camera and the excitation light source unit, and the imaging lens of the imaging hyperspectral camera is oriented towards the sample crystallization control unit, suitable for real-time acquisition of the photoluminescence PL spectrum data cube sequence of the thin film surface; the signal processing and monitoring device is disposed on an external client, and the signal processing and monitoring device is electrically connected to the imaging hyperspectral camera.

[0004] In one possible implementation, the sample crystallization control unit includes a substrate and a heating stage; the substrate has a preset thickness and is disposed on an external production stage; the heating stage is disposed at the bottom of the substrate and is in contact with the substrate.

[0005] In one possible implementation, the excitation light source unit includes a laser and a collimating optical element; the laser is disposed obliquely above the substrate, and there is a predetermined distance between the laser and the substrate; the collimating optical element is disposed at one end of the laser, and the collimating optical element is located between the substrate and the laser, and there is a predetermined distance between the collimating optical element and the substrate.

[0006] In one possible implementation, the laser is one of a solid-state laser, a semiconductor laser, an LED light source, a tungsten lamp, a deuterium lamp, or a xenon lamp.

[0007] In one possible implementation, the sample crystallization control unit is one or more of a spin coater, a coating machine, a vacuum flash evaporator, and a hot stage.

[0008] In one possible implementation, the signal processing and monitoring device is any one of a computer, a microcontroller, a DSP, and an FPGA.

[0009] In one possible implementation, the perovskite thin film crystallization process photoluminescence spatial distribution monitoring device described above includes the following steps: S1: The hyperspectral camera first acquires the background spectral signal under conditions where the laser is not turned on, and transmits the background spectral signal to the signal processing and monitoring device, which integrates the stray light data at this time; S2: The incident light emitted by the laser is adjusted into a light spot, which is incident on the surface of the substrate; S3: The precursor solution of the perovskite thin film is sprayed onto the surface of the substrate, and the light spot is incident on the perovskite thin film; S4: The hyperspectral camera continuously acquires the perovskite thin film in step S3 and transmits the PL spectral signal to the signal processing and monitoring device; S5: The signal processing and monitoring device integrates the PL spectral signal in step S4 to form PL spectral data, and subtracts the stray light data in S1 from the PL spectral data to obtain the PL characteristic information of the perovskite thin film.

[0010] In one possible implementation, the incident light in S2 is broadband light or single-wavelength light, specifically: S21: the wavelength range of the broadband light is 10nm-1100nm, and covers the absorption range of each component or product of each component in the raw material used for depositing the thin film; S22: the wavelength of the single-wavelength light is 10nm-1100nm; S23: the broadband light or the single-wavelength light is collimated into parallel light by the collimating optical element and incident on the surface of the substrate.

[0011] In one possible implementation, S4 specifically comprises: S41: The hyperspectral camera continuously acquires data from the perovskite thin film in step S3, obtaining the PL peak wavelength, PL peak intensity, PL half-width, and PL integrated intensity at a specific wavelength. The operating band of the imaging hyperspectral camera covers the PL emission band of the perovskite thin film, with a spectral response range of 400-1100 nm, a spectral resolution of 5 nm, and a spatial resolution of at least 640x480 pixels; S42: The PL peak wavelength, PL peak intensity, PL half-width, and PL integrated intensity at a specific wavelength form a PL spectral signal.

[0012] In one possible implementation, S5 specifically includes: S51: The signal processing and monitoring device performs real-time calculations on the PL spectral signal from step S4, subtracts stray light data from S1, and displays a two-dimensional distribution map of the PL peak wavelength, PL peak intensity, and PL peak half-width; S52: The signal processing and monitoring device plots a curve showing the change of PL spectral characteristic parameters at the specified luminescent position of the perovskite thin film over time.

[0013] The beneficial effects of this invention are as follows: During the crystallization process of perovskite thin films, the surface of the perovskite thin film is scanned in real time using an imaging hyperspectral camera to obtain a PL spectral data cube; PL characteristic parameters are extracted from the data cube to generate its two-dimensional spatial distribution map; the film uniformity is analyzed based on the distribution map, and the perovskite thin film crystallization process parameters are optimized accordingly. Attached Figure Description

[0014] Figure 1 The specific structure of the perovskite thin film crystallization process photoluminescence spatial distribution monitoring device of this application is shown; Figure 2 This is a PL spectrum data diagram of the perovskite film at different locations during the initial annealing stage of Example 1 of this application; Figure 3 This is a PL spectrum change graph at different time points during the annealing process of Embodiment 1 of this application. Detailed Implementation

[0015] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0016] Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar symbols denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the invention, and should not be construed as limiting the invention.

[0017] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention or to simplify the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0018] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0019] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," "fixing," "linking," "hinging," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0020] like Figures 1 to 2 As shown, the photoluminescence spatial distribution monitoring device for the perovskite thin film crystallization process includes a sample crystallization control unit 200, an excitation light source unit 100, an imaging hyperspectral camera 300, and a signal processing and monitoring device 400. The sample crystallization control unit 200 is mounted on an external production platform. The excitation light source unit 100 is positioned above the sample crystallization control unit 200, and its emission angle is adjustable. The imaging hyperspectral camera 300 is positioned above the sample crystallization control unit 200, with a preset distance between it and the excitation light source unit 100. The imaging lens of the imaging hyperspectral camera 300 is oriented towards the sample crystallization control unit 200, suitable for real-time acquisition of photoluminescence (PL) spectral data of the perovskite thin film surface. The signal processing and monitoring device 400 is located on an external client and is electrically connected to the imaging hyperspectral camera 300.

[0021] Specifically, such as Figure 1As shown, the perovskite thin film crystallization process photoluminescence spatial distribution monitoring device includes a sample crystallization control unit 200, an excitation light source unit 100, an imaging hyperspectral camera 300, and a signal processing and monitoring device 400. More specifically, the sample crystallization control unit 200 is used to spray the perovskite thin film precursor solution onto the sample crystallization control unit 200 to form a perovskite thin film. The excitation light source unit 100 is used to generate incident light and direct the incident light onto the surface of the perovskite thin film to excite the photoluminescence (PL) of the perovskite thin film. The imaging hyperspectral camera 300 performs real-time scanning of the perovskite thin film surface, acquiring the PL spectral data signal of the perovskite thin film. The signal processing and monitoring device 400 is electrically connected to the imaging hyperspectral camera 300 to receive the PL spectral data signal of the perovskite thin film. The signal processing and monitoring device 400 receives the PL spectral data signal, integrates it, extracts PL characteristic parameters such as peak wavelength, intensity, and full width at half maximum (FWHM), generates its two-dimensional spatial distribution map, analyzes the uniformity of the perovskite thin film based on the distribution map, and provides feedback to optimize the crystallization process parameters. It should be noted that, depending on the actual requirements, the incident light needs to be incident from the front of the thin film. Therefore, the excitation source unit 100 is positioned above the sample crystallization control unit 200, and its angle can be adjusted as needed. Since the perovskite thin film is formed on top of the sample crystallization control unit 200, the imaging hyperspectral camera 300 is positioned above the sample crystallization control unit 200 to facilitate real-time scanning and acquisition of PL information.

[0022] In one possible implementation, the sample crystallization control unit 200 includes a substrate 210 and a heating stage 220; the substrate 210 has a preset thickness and is disposed on an external production stage; the heating stage 220 is disposed at the bottom of the substrate 210 and is in contact with the bottom of the substrate 210.

[0023] In another feasible embodiment of this application, the sample crystallization control unit 200 includes a substrate 210 and a heating stage 220. As described above, the perovskite film precursor solution is sprayed onto the substrate 210 to form a perovskite film. The perovskite film needs to be annealed. A heating stage 220 is provided below the substrate 210 to perform annealing treatment on the perovskite film on the substrate 210.

[0024] It should be emphasized that the sample crystallization control unit 200 is one or more of a spin coater, coating machine, vacuum flash evaporation device, and hot stage. These are existing technologies and will not be described in detail here.

[0025] In one possible implementation, the excitation source unit 100 includes a laser 110 and a collimating optical element 120; the laser 110 is disposed obliquely above the substrate 210, and there is a predetermined distance between the laser 110 and the substrate 210; the collimating optical element 120 is disposed at one end of the laser 110, and the collimating optical element 120 is located between the substrate 210 and the laser 110, and there is a predetermined distance between the collimating optical element 120 and the substrate 210.

[0026] Specifically, such as Figure 1 As shown, the laser 110 emits incident light as needed to excite the PL spectrum data of the perovskite thin film. However, the incident light needs to be parallel. A collimating optical element 120 is set to convert the incident light emitted by the laser 110 into parallel light.

[0027] It should be emphasized that the laser 110 is one of the following: solid-state laser, semiconductor laser, LED light source, tungsten lamp, deuterium lamp, and xenon lamp. These are existing technologies and will not be described in detail here.

[0028] In one possible implementation, the signal processing and monitoring device 400 is any one of a computer, a microcontroller, a DSP, and an FPGA.

[0029] It should be noted that the imaging hyperspectral camera 300 is a built-in pushbroom hyperspectral camera. Its operating wavelength covers the PL emission band of perovskite thin films, with a spectral response range of 400-1100 nm, a spectral resolution better than 5 nm, and a spatial resolution of not less than 640x480 pixels. The imaging hyperspectral camera has a spatial scanning function, capable of acquiring the complete spectrum of 1512 spatial pixels in a single measurement, with a temporal resolution better than 10 seconds, sufficient to capture dynamic changes during the crystallization process.

[0030] This application also includes a method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films. Using the aforementioned device for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films, the method includes the following steps: S1: The hyperspectral camera first acquires the background spectral signal under conditions where the laser is not activated, and transmits this background spectral signal to the signal processing and monitoring device, which integrates the stray light data at this time; S2: The incident light emitted by the laser is adjusted into a light spot, which is incident on the surface of the substrate; S3: The precursor solution of the perovskite thin film is sprayed onto the surface of the substrate, and the light spot is incident on the perovskite thin film; S4: The hyperspectral camera continuously acquires data from the perovskite thin film in step S3, and transmits the PL spectral signal to the signal processing and monitoring device; S5: The signal processing and monitoring device integrates the PL spectral signal from step S4 to form PL spectral data, and subtracts the stray light data from S1 from the PL spectral data to obtain the PL characteristic information of the perovskite thin film.

[0031] Specifically, the method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films uses a perovskite thin film crystallization process photoluminescence spatial distribution monitoring device, and mainly consists of the following steps: First, stray light data needs to be collected: The hyperspectral camera 300 first acquires the background spectral signal in an environment where the laser 110 is not turned on; in other words, this step is a no-load acquisition. This background spectral signal is then transmitted to the signal processing and monitoring device 400, which integrates the stray light data to obtain the final stray light data. The stray light data is discarded because it can affect the final structure, leading to inaccurate PL spectral data.

[0032] Next, the laser 110 is turned on. The specific steps are as follows: the incident light emitted by the laser is adjusted into a spot, and the spot is incident on the surface of the substrate. This is to prepare for exciting the PL signal of the perovskite thin film.

[0033] Next, the fabrication of the perovskite thin film and the excitation of its photoluminescence (PL) signal begin: the precursor solution for the perovskite thin film is sprayed onto the surface of the substrate; this step is the crystallization process of the perovskite. Simultaneously, the light spot is incident on the perovskite thin film, exciting its PL signal. This step involves exciting the PL signal during the crystallization process of the perovskite thin film.

[0034] Next, the step of acquiring the PL signal specifically involves the hyperspectral camera 300 continuously acquiring data from the perovskite thin film in the previous step and transmitting the PL spectral signal to the signal processing and monitoring equipment 400. This step enables real-time acquisition of PL information from the perovskite thin film, allowing for real-time monitoring of the perovskite thin film crystallization process.

[0035] Finally, the PL signals are integrated: the signal processing and monitoring device 400 integrates the PL spectral signals from the previous step to form PL spectral data. The stray light data from the first step is subtracted from the PL spectral data to obtain the PL characteristic information of the perovskite thin film. In this step, when the signal processing and monitoring device 400 integrates the PL spectral signals to form PL spectral data, the stray light data from the first step needs to be subtracted, resulting in accurate PL spectral data for the perovskite thin film.

[0036] It should be noted that PL spectral data contains two-dimensional spatial information and one-dimensional spectral information. The spatial distribution map generated based on it includes extracting and visualizing at least one of the following characteristic parameters: PL peak wavelength, used to characterize the temporal and spatial evolution of phase purity and component distribution; PL peak intensity, used to characterize the temporal and spatial evolution of radiation recombination efficiency and film quality; PL half-width at half-maximum (FWHM), used to characterize the temporal and spatial evolution of crystallinity and disorder; and PL integrated intensity at a specific wavelength.

[0037] In another feasible embodiment of this application, the incident light in S2 is broadband light or single-wavelength light, specifically: S21: the wavelength range of the broadband light is 10nm-1100nm, and covers the absorption range of each component or product of each component in the raw material used for depositing the thin film; S22: the wavelength of the single-wavelength light is 10nm-1100nm; S23: the broadband light or the single-wavelength light is collimated into parallel light by the collimating optical element and incident on the surface of the substrate.

[0038] It is important to emphasize that the incident light is either broadband or single-wavelength light. More specifically, step S2 is as follows: S21: The broadband light has a wavelength range of 10nm-1100nm, covering the absorption range of each component or its derivative in the raw materials used for film deposition; S22: The single-wavelength light has a wavelength of 10nm-1100nm; S23: The broadband or single-wavelength light is collimated into parallel light by the collimating optical element and incident on the surface of the substrate. This configuration allows for a more comprehensive excitation of the PL signal in the perovskite thin film.

[0039] Another feasible implementation scheme of this application, specifically S4, is as follows: S41: The hyperspectral camera continuously acquires data from the perovskite thin film in step S3, obtaining the PL peak wavelength, PL peak intensity, PL half-width at half-maximum, and PL integrated intensity at a specific wavelength. The operating band of the imaging hyperspectral camera covers the PL emission band of the perovskite thin film, with a spectral response range of 400-1100 nm, a spectral resolution of 5 nm, and a spatial resolution of at least 640x480 pixels; S42: The PL peak wavelength, PL peak intensity, PL half-width at half-maximum, and PL integrated intensity at a specific wavelength form a PL spectral signal. This setup allows for a more comprehensive acquisition of the PL signal from the perovskite thin film.

[0040] Another feasible solution of this application, S5 specifically includes: S51: The signal processing and monitoring device performs real-time calculation on the PL spectral signal in step S4, subtracts the stray light data in S1, and displays a two-dimensional distribution map of the PL peak wavelength, PL peak intensity, and PL peak half-width; S52: The signal processing and monitoring device plots the curve of the PL spectral characteristic parameters of the specified luminescent position of the perovskite thin film changing over time.

[0041] It is important to emphasize that the signal processing and monitoring equipment, after processing the PL spectral data, collectively calculates the statistical characteristic values ​​of the distribution maps of characteristic parameters at different time points to quantitatively assess the dynamic change trend of the perovskite film uniformity. These statistical characteristic values ​​include the standard deviation, relative standard deviation, or uniformity index of the characteristic parameters over the entire region or a specific region. Subsequently, a two-dimensional distribution map and curves showing the changes of PL spectral characteristic parameters over time are generated.

[0042] This application, through the above settings and steps, applies imaging hyperspectral technology to in-situ time- and spatially resolved monitoring of the crystallization process of perovskite thin films. It enables continuous and rapid acquisition of data cube sequences containing two-dimensional spatial and one-dimensional spectral information, achieving an intuitive and quantitative assessment of the two-dimensional uniformity of the film—something impossible with any traditional method. By analyzing the spatiotemporal evolution of the PL peak wavelength, the occurrence and development of phase separation can be accurately tracked; by analyzing the spatiotemporal evolution of the PL intensity, the generation, annihilation, and migration of defects can be monitored in real time; and by analyzing the spatiotemporal evolution of the PL half-peak width, the uniformity and rate of the crystallization process can be evaluated. This provides the most intuitive dynamic data for understanding the crystallization mechanism. Furthermore, this application is a non-contact, non-destructive optical measurement method. Its high temporal resolution (second-level) matches the key kinetic timescale of the crystallization process, enabling complete capture of dynamic information from nucleation to grain growth without affecting the process itself.

[0043] It should also be noted that this application has a high degree of integration and can be used in conjunction with various crystallization equipment, such as hot stages and atmosphere chambers. By monitoring uniformity indicators in real time, it lays a solid foundation for realizing intelligent control and high-throughput process optimization in perovskite thin film preparation.

[0044] The following are embodiments of this application.

[0045] Example 1: S1: The hyperspectral camera first takes the background spectral signal in an environment where the laser is not turned on, and transmits the background spectral signal to the signal processing and monitoring equipment. The signal processing and monitoring equipment integrates the stray light data at this time and uses a blue LED laser with a center wavelength of 455 nm. S2: Adjust the incident light emitted by the laser into a light spot, the light spot is incident on the surface of the substrate, and convert the incident light into a square light spot with a size of 20mm×20mm; S3: The perovskite thin film is prepared on the surface of the substrate by spin coating of the precursor solution. The square light spot is incident on the perovskite thin film, and the heating stage heats the substrate at an annealing temperature of 100 degrees and maintains that temperature. S4: The hyperspectral camera continuously acquires data from the perovskite thin film obtained in step S3 and transmits the PL spectral signal to the signal processing and monitoring equipment. The main parameters of the hyperspectral camera are: spectral range 400 nm, spectral resolution 2.5 nm, spatial resolution 1920 x 1920 pixels, and a single data cube acquisition time of 3 seconds. The camera is equipped with a 25mm focal length lens via a C-Mount interface and connects to a computer via a USB 3.0 interface. S5: The signal processing and monitoring equipment integrates the PL spectral signal from step S4 to form PL spectral data. The stray light data in S1 is subtracted from the PL spectral data to obtain the PL characteristic information of the perovskite film, and a two-dimensional distribution map and a curve showing the change of PL spectral characteristic parameters over time are generated.

[0046] In Example 1, the entire annealing process lasted 210 seconds, and a total of 15 PL spectral data were collected.

[0047] Example 2 A perovskite precursor solution was spin-coated onto a glass substrate to form a wet film. The substrate with the wet film was then rapidly transferred to a vacuum flash evaporation chamber, and the mechanical pump was activated to quickly reduce the vacuum level in the chamber to 5 Pa. Simultaneously, the imaging hyperspectral camera was immediately started to acquire data according to the set time sequence. The entire annealing process lasted 210 seconds, during which 15 PL spectral data points were acquired.

[0048] Example 3 The perovskite precursor solution was prepared on a glass substrate by slit coating, and an imaging hyperspectral camera was immediately activated to begin acquiring data according to the set time sequence. The entire annealing process lasted 210 seconds, and a total of 15 PL spectral data points were acquired.

[0049] like Figure 2 As shown, the PL peak positions of the perovskite film at different locations during the initial annealing stage in Example 1 are almost identical, indicating that the phase distribution on the two-dimensional scale of the film surface is uniform and the crystallization rate is not significantly different.

[0050] like Figure 3 As shown, Figure 3 Showing from Figure 2 The PL spectrum changes at different time points (t=1s, 2s, 3s, 4s, 5s, 7s, 10s, 15s, 30s, 60s, 90s, 120s, 150s, 180s, 210s) during the annealing process are shown in the figure. It can be clearly seen from the figure that the PL intensity of the film decreases and the peak position shifts towards blue during t=1-60s, corresponding to small grain size and numerous defects in the early stage of crystallization; from t=60-210s, as the solvent further evaporates and the high temperature causes the film grain size to increase, the PL peak position shifts towards red and the intensity increases.

[0051] Therefore, this application can obtain PL spectral data of perovskite thin films in real time and monitor the spatial distribution characteristics of photoluminescence of perovskite thin films in real time.

[0052] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope disclosed in the present invention, based on the technical solution and concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A device for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films, characterized in that, This includes a sample crystallization control unit, an excitation light source unit, an imaging hyperspectral camera, and signal processing and monitoring equipment; The sample crystallization control unit is located on an external production platform; The excitation light source unit is positioned above the sample crystallization control unit, and the excitation light source unit has an adjustable light emission angle; The imaging hyperspectral camera is positioned above the sample crystallization control unit. There is a preset distance between the imaging hyperspectral camera and the excitation light source unit, and the imaging lens of the imaging hyperspectral camera is positioned towards the sample crystallization control unit. It is suitable for acquiring photoluminescence PL spectrum data of the thin film surface in real time. The signal processing and monitoring equipment is located on an external client and is electrically connected to the imaging hyperspectral camera.

2. The perovskite thin film crystallization process photoluminescence spatial distribution monitoring device according to claim 1, characterized in that, The sample crystallization control unit includes a substrate and a heating stage; The substrate has a preset thickness and is mounted on an external production platform; The heating stage is located at the bottom of the substrate and is in contact with the substrate.

3. The perovskite thin film crystallization process photoluminescence spatial distribution monitoring device according to claim 1, characterized in that, The excitation source unit includes a laser and collimating optical elements; The laser is positioned diagonally above the substrate, and there is a predetermined distance between the laser and the substrate; The collimating optical element is disposed at one end of the laser, and is located between the substrate and the laser, with a predetermined distance between the collimating optical element and the substrate.

4. The perovskite thin film crystallization process photoluminescence spatial distribution monitoring device according to claim 3, characterized in that, The laser is one of the following: solid-state laser, semiconductor laser, LED light source, tungsten lamp, deuterium lamp, and xenon lamp.

5. The perovskite thin film crystallization process photoluminescence spatial distribution monitoring device according to claim 1, characterized in that, The sample crystallization control unit is one or more of the following: spin coater, coating machine, vacuum flash evaporator, and hot stage.

6. The perovskite thin film crystallization process photoluminescence spatial distribution monitoring device according to claim 1, characterized in that, The signal processing and monitoring equipment can be any one of a computer, microcontroller, DSP, and FPGA.

7. A method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films, characterized in that, Using the photoluminescence spatial distribution monitoring device for the perovskite thin film crystallization process according to any one of claims 2-6, the method includes the following steps: S1: The hyperspectral camera first acquires the background spectral signal in an environment where the laser is not turned on, and transmits the background spectral signal to the signal processing and monitoring equipment. The signal processing and monitoring equipment then integrates the stray light data at this time. S2: Adjust the incident light emitted by the laser into a light spot, and the light spot is incident on the surface of the substrate; S3: The precursor solution of the perovskite film is sprayed onto the surface of the substrate, and the light spot is incident on the perovskite film; S4: The hyperspectral camera continuously acquires data from the perovskite thin film in step S3 and transmits the PL spectral signal to the signal processing and monitoring equipment. S5: The signal processing and monitoring equipment integrates the PL spectral signal from step S4 to form PL spectral data. The stray light data in S1 is subtracted from the PL spectral data to obtain the PL characteristic information of the perovskite thin film.

8. The method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films according to claim 7, characterized in that, The incident light in S2 is either broadband light or single-wavelength light, specifically: S21: The wavelength range of the broadband light is 10nm-1100nm, and it covers the absorption range of each component or the product of each component in the raw material used for depositing the thin film; S22: The wavelength of the single-wavelength light is 10nm-1100nm; S23: The broadband light or the single-wavelength light is collimated into parallel light by the collimating optical element and incident on the surface of the substrate.

9. The method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films according to claim 7, characterized in that, S4 specifically refers to: S41: The hyperspectral camera continuously acquires data from the perovskite thin film in step S3, obtaining the PL peak wavelength, PL peak intensity, PL half-width, and PL integrated intensity at a specific wavelength. The working band of the imaging hyperspectral camera covers the PL emission band of the perovskite thin film, with a spectral response range of 400-1100nm, a spectral resolution of 5nm, and a spatial resolution of at least 640x480 pixels. S42: The PL peak wavelength, PL peak intensity, PL half-width, and PL integrated intensity at a specific wavelength form the PL spectral signal.

10. The method for monitoring the spatial distribution of photoluminescence during the crystallization process of perovskite thin films according to claim 7, characterized in that, S5 specifically refers to: S51: The signal processing and monitoring equipment performs real-time calculations on the PL spectral signal in step S4, subtracts the stray light data in S1, and displays a two-dimensional distribution map of the PL peak wavelength, PL peak intensity, and PL peak half-width. S52: The signal processing and monitoring equipment plots the curves of the PL spectral characteristic parameters of the specified luminescent position of the perovskite thin film as a function of time.