Reference voltage source and constant temperature system thereof

Abstract

The invention relates to a reference voltage source and a constant temperature system thereof, and belongs to the technical field of power electronic devices. A double-substrate stacking structure is adopted, a printed board is located on the bottom layer, a high-thermal-conductivity substrate is located on the top layer, a heating control circuit used for enabling the high-thermal-conductivity substrate to be in a constant-temperature environment is welded to the high-thermal-conductivity substrate, and a hole used for containing a reference device in a reference voltage source functional circuit component is formed in the high-thermal-conductivity substrate in advance. The reference device body is located in the hole of the high-thermal-conductivity substrate, and temperature field balance of the reference device body is achieved. The reference source chip of the reference voltage source is nested in the hole formed in the heat conduction substrate, so that the reference source chip of the reference voltage source is located in a uniform thermal field, constant-temperature control over the reference voltage source is achieved through the double-substrate stacking structure, the temperature coefficient of voltage output by the reference voltage source module is reduced, and the temperature coefficient of the voltage output by the reference voltage source module is increased. The problem that temperature drift of a reference source core cannot be eliminated due to the fact that an existing reference voltage source cannot maintain constant temperature is solved.

Description

Technical Field

[0001] This invention relates to a reference voltage source and its temperature control system, belonging to the field of power electronic device technology. Background Technology

[0002] As the core reference of high-precision 0.01-level standard energy meter analog-to-digital converters (ADCs), the absolute accuracy and long-term stability of the output value of the reference voltage source directly determine the accuracy of energy metering. Current mainstream solutions mainly rely on bandgap reference voltage sources and embedded Zener reference voltage sources. These reference sources possess basic stability and low noise characteristics in static environments. However, as metering accuracy requirements move towards 0.01% or even higher levels, and as the complexity of equipment operating environments increases (such as wide temperature ranges and strong electromagnetic interference), existing technologies have revealed the following problems: First, the core output voltage characteristics of both bandgap and Zener references are highly sensitive to temperature changes. Their inherent temperature coefficients directly cause reference voltage drift when ambient temperature fluctuates. For a 0.01-class standard energy meter, the resulting ADC quantization reference offset is sufficient to cause overall metering accuracy to exceed the standard. Second, existing solutions generally use passive heat sinks, simple thermal insulation materials, or local temperature compensation circuits, which can only slow down the rate of temperature change but cannot maintain a constant temperature, making it difficult to achieve precise and uniform temperature field control of the chip. Furthermore, in field application scenarios with large day-night temperature differences and harsh electromagnetic environments, traditional reference sources are not only susceptible to their own temperature drift, but their output is also easily affected by the heating of nearby power devices, airflow disturbances, and coupling interference from external electromagnetic noise, resulting in poor reference stability. In addition, a single circuit board layout cannot isolate heat conduction paths, and thermal coupling between the sensitive reference source chip and heat-generating components or the environment is unavoidable; at the same time, the lack of effective electromagnetic shielding design makes the reference signal susceptible to contamination, further amplifying the apparent effect of temperature drift. Summary of the Invention

[0003] The purpose of this invention is to provide a reference voltage source and its constant temperature system to solve the problem of reference source core temperature drift caused by the inability of current reference voltage sources to maintain constant temperature.

[0004] To solve the above-mentioned technical problems, the present invention provides a reference voltage source constant temperature system. The system includes a high thermal conductivity substrate. The high thermal conductivity substrate and a printed circuit board with the pins of the reference voltage source functional circuit components soldered on them form a double substrate stack structure. The printed circuit board is located at the bottom layer of the double substrate stack structure, and the high thermal conductivity substrate is located at the top layer of the double substrate stack structure. A heating control circuit for keeping the high thermal conductivity substrate in a constant temperature environment is soldered on the high thermal conductivity substrate. An opening is pre-set on the high thermal conductivity substrate for accommodating the reference device in the reference voltage source functional circuit components, so that the reference device body is placed in the opening of the high thermal conductivity substrate, thereby achieving temperature field uniformity of the reference device body.

[0005] Furthermore, the heating control circuit soldered on the high thermal conductivity substrate uses an array of heating resistors arranged in a grid topology on the high thermal conductivity substrate and soldered to the surface of the high thermal conductivity substrate.

[0006] Furthermore, the system also includes a protective architecture surrounding the dual-substrate stacked structure, which includes an insulating and heat-insulating material layer and an electromagnetic shielding layer for isolating external temperature effects and electromagnetic interference.

[0007] Furthermore, the insulating and heat-preserving material layer includes an inner heat-preserving layer and an outer heat-preserving layer, and the electromagnetic shielding layer includes an inner shielding layer and an outer shielding layer. The inner heat-preserving layer is located at the innermost layer and is attached to the outside of the double substrate stacked structure to lock the internal thermal field and slow down the loss of internal heat to the outside. The inner shielding layer is disposed on the outside of the inner heat-preserving layer to achieve mechanical fixation and electromagnetic isolation. The outer heat-preserving layer is disposed on the outside of the inner shielding layer to attenuate the impact of external temperature changes on the internal thermal balance. The outer shielding layer is disposed on the outside of the outer heat-preserving layer to provide a secondary electromagnetic isolation barrier to shield the complex external electromagnetic environment.

[0008] Furthermore, the heating control circuit also includes a heating control chip and a temperature measurement unit. The temperature measurement unit is used to measure the temperature of the high thermal conductivity substrate, and the heating control chip is used to control the heating resistor according to the temperature measured by the temperature measurement unit, so that the temperature of the high thermal conductivity substrate is kept in a constant temperature range.

[0009] The present invention also provides a reference voltage source, including reference voltage source functional circuit components, the reference voltage source functional circuit components including a reference device, the pins of the reference voltage source functional circuit components being soldered to a printed circuit board, and further including a high thermal conductivity substrate, the high thermal conductivity substrate and the printed circuit board forming a double substrate stack structure, the printed circuit board being located at the bottom layer of the double substrate stack structure, the high thermal conductivity substrate being located at the top layer of the double substrate stack structure, a heating control circuit for keeping the high thermal conductivity substrate in a constant temperature environment being soldered on the high thermal conductivity substrate, and an opening for accommodating the reference device being pre-set on the high thermal conductivity substrate, so that the reference device body is located within the opening of the high thermal conductivity substrate, thereby achieving temperature field uniformity of the reference device body.

[0010] Furthermore, the heating control circuit soldered on the high thermal conductivity substrate uses an array of heating resistors arranged in a grid topology on the high thermal conductivity substrate and soldered to the surface of the high thermal conductivity substrate.

[0011] Furthermore, the reference voltage source also includes a protective architecture surrounding the dual-substrate stacked structure, which includes an insulating and heat-insulating material layer and an electromagnetic shielding layer for isolating external temperature effects and electromagnetic interference.

[0012] Furthermore, the insulating and heat-preserving material layer includes an inner heat-preserving layer and an outer heat-preserving layer, and the electromagnetic shielding layer includes an inner shielding layer and an outer shielding layer. The inner heat-preserving layer is located at the innermost layer and is attached to the outside of the double substrate stacked structure to lock the internal thermal field and slow down the loss of internal heat to the outside. The inner shielding layer is disposed on the outside of the inner heat-preserving layer to achieve mechanical fixation and electromagnetic isolation. The outer heat-preserving layer is disposed on the outside of the inner shielding layer to attenuate the impact of external temperature changes on the internal thermal balance. The outer shielding layer is disposed on the outside of the outer heat-preserving layer to provide a secondary electromagnetic isolation barrier to shield the complex external electromagnetic environment.

[0013] Furthermore, the heating control circuit also includes a heating control chip and a temperature measurement unit. The temperature measurement unit is used to measure the temperature of the high thermal conductivity substrate, and the heating control chip is used to control the heating resistor according to the temperature measured by the temperature measurement unit, so that the temperature of the high thermal conductivity substrate is kept in a constant temperature range.

[0014] The beneficial effects of this invention are as follows: This invention adopts a dual-substrate stacked structure, with the printed circuit board located at the bottom layer and the high thermal conductivity substrate at the top layer. The high thermal conductivity substrate is soldered with a heating control circuit to maintain a constant temperature environment. The high thermal conductivity substrate has pre-set openings for accommodating the reference device in the reference voltage source functional circuit, ensuring the reference device body is within the openings and achieving temperature field uniformity. This invention nests the reference source chip of the reference voltage source through openings in the thermally conductive substrate, placing the reference source chip in a uniform thermal field. The dual-substrate stacked structure achieves constant temperature control of the reference voltage source, reducing the temperature coefficient of the voltage output from the reference voltage source module and solving the problem of unavoidable temperature drift of the reference source core caused by the inability to maintain a constant temperature in current reference voltage sources. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the dual-substrate stacking design of the reference voltage source constant temperature system of the present invention; Figure 2 This is a schematic diagram of the four-layer composite protection architecture used in the constant temperature system of the reference voltage source of the present invention; Figure 3 This is a side view of the reference voltage source constant temperature system of the present invention; 1 is the bottom printed circuit board, 2 is the top high thermal conductivity copper substrate, 3 is the opening, 4 is the heating resistor, 5 is the functional module, 6 is the inner insulation layer, 7 is the inner shielding layer, 8 is the outer insulation layer, 9 is the outer shielding layer, 10 is the reference device body, and 11 is the bent pin. Detailed Implementation

[0016] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings.

[0017] This invention employs a dual-substrate stacked structure to provide a stable constant-temperature environment for the reference device of the reference voltage source, thereby minimizing the impact of ambient temperature on the performance of the reference voltage source and ensuring its output accuracy and long-term stability.

[0018] Reference voltage source implementation method The reference voltage source of the present invention includes reference voltage source functional circuit components, which include a reference device and a reference source peripheral circuit. The peripheral circuit components are all soldered on the back of the printed circuit board, except for the Zener diode (the main component of the reference source) which is soldered on the front of the printed circuit board. The printed circuit board and the high thermal conductivity substrate form a double substrate stack structure. The printed circuit board is located at the bottom layer of the double substrate stack structure, and the high thermal conductivity substrate is located at the top layer of the double substrate stack structure. The high thermal conductivity substrate is soldered with a heating control circuit for keeping the high thermal conductivity substrate in a constant temperature environment. The high thermal conductivity substrate has a pre-set opening for accommodating the reference device, so that the reference device body is placed in the opening of the high thermal conductivity substrate, thereby achieving temperature field uniformity of the reference device body.

[0019] Specifically, a dual-substrate stacked structure such as Figure 1 As shown, the pins of the reference voltage source functional circuit components are soldered onto the bottom printed circuit board 1. The high thermal conductivity substrate is a top high thermal conductivity copper substrate 2, with the front side of the bottom printed circuit board 1 facing upwards. The top high thermal conductivity copper substrate 2 is slightly smaller than the bottom printed circuit board 1, and the top high thermal conductivity copper substrate 2 and the bottom printed circuit board 1 are fixed together by bent pins. An opening 3 is provided on the top high thermal conductivity copper substrate 2 to accommodate the reference device body. After the reference source device body (also called the reference source device body) is inserted into the opening 3 of the top high thermal conductivity copper substrate 2, it is soldered to the copper substrate to achieve double fixation of the top high thermal conductivity copper substrate 2 and the bottom printed circuit board 1.

[0020] A heating control circuit is also soldered onto the top-layer high thermal conductivity copper substrate 2. This heating control circuit includes a heating element, a heating control chip, and a temperature measurement unit. The temperature measurement unit measures the temperature of the high thermal conductivity substrate, and the heating control chip controls the heating element based on the temperature measured by the temperature measurement unit, keeping the temperature of the high thermal conductivity substrate within a constant temperature range. Figure 1As shown, the heating device uses heating resistors 4, and there are multiple heating resistors 4 arranged in an array on the top high thermal conductivity copper substrate 2. They are welded to the surface of the top high thermal conductivity copper substrate 2 in a "grid topology" to ensure that the generated heat can be quickly and evenly conducted throughout the plane of the top high thermal conductivity copper substrate 2, forming a highly consistent basic heat source platform. The shape of the opening 3 can be set according to the actual situation, as long as it can accommodate the reference device, such as circular, rectangular, etc. In this embodiment, the reference device is a reference voltage chip or a reference diode device. That is, the reference voltage chip or reference diode device is a device that requires strict constant temperature control, so it needs to be placed in the opening 3 of the top high thermal conductivity copper substrate 2. The physical nesting installation of the reference device can be achieved through the opening 3 of the top high thermal conductivity copper substrate 2. In this way, the reference device body and the hole wall of the high thermal conductivity copper substrate form an all-round surround, so that the core area of ​​the chip is surrounded by high thermal conductivity copper material, establishing a three-dimensional uniform thermal environment and achieving a uniform temperature field of the chip body. Figure 3 As shown, the bottom printed circuit board 1 and the top high thermal conductivity copper substrate 2 are electrically connected by bent pins 11, which also fix the circuit board. The reference device pins are soldered to the bottom printed circuit board 1, and the reference device body 10 is nested with the top high thermal conductivity copper substrate 2 and spot-welded to achieve double fixation. In addition, the bottom printed circuit board 1 and the top high thermal conductivity copper substrate 2 can be directly filled with insulating material to prevent the bottom printed circuit board 1 and the top high thermal conductivity copper substrate 2 from touching and causing a short circuit.

[0021] Considering that the reference voltage source is also subject to coupling interference from nearby power device heating, airflow disturbance and external electromagnetic noise, the present invention constructs a protective architecture around the above-mentioned dual substrate stacked structure (also called functional module) 5. The protective architecture includes an insulating and heat-insulating material layer and an electromagnetic shielding layer to isolate external temperature influence and electromagnetic interference. Figure 2 As shown, this invention employs a progressive four-layer composite protective architecture to achieve environmental isolation. The innermost layer of this protective architecture is a high-efficiency insulating and heat-insulating material layer (also called the inner insulation layer) 6 closely attached to the functional module 5, forming the inner insulation zone to lock the internal thermal field and slow down the outward loss of internal heat. Closely attached to the outside of the insulation layer 6 is the first electromagnetic shielding metal shell, which constitutes the inner shielding layer 7, serving both mechanical fixing and electromagnetic isolation functions. Outside the inner shielding layer 7, another layer of insulating and heat-insulating material is wrapped to form the inner insulation layer 8, creating a reinforced constant-temperature outer insulation zone as a second thermal barrier to further attenuate the impact of external temperature changes on the internal thermal balance. The outermost layer is sealed by the second electromagnetic shielding metal shell, which constitutes the outer shielding layer 9, providing a secondary electromagnetic isolation barrier to shield against complex external electromagnetic environments and enhance the rigidity and sealing of the overall structure.

[0022] The four-layer structure (inner insulation layer 6, inner shielding layer 7, outer insulation layer 8, and outer shielding layer 9) adopted in this invention are nested sequentially from the inside out, working synergistically to achieve a progressive protection effect of "thermal field stabilization → electromagnetic isolation → thermal field maintenance → secondary electromagnetic shielding" in sequence. Together, they construct a highly stable thermodynamic and electromagnetic microenvironment, effectively reducing the impact of environmental interference on the temperature drift of the reference voltage by controlling the chip temperature fluctuation within ±0.5°C.

[0023] As can be seen, this invention, through its nested design with openings in the copper substrate, enables the reference source chip to be placed in a uniform thermal field. Combined with closed-loop temperature control, this suppresses chip operating temperature fluctuations within ±0.5°C, reducing reference voltage temperature drift. Furthermore, the four-layer composite protection employs a progressive structure of "insulation-shielding-insulation-shielding" to achieve dual thermodynamic and electromagnetic isolation, attenuating the impact of external ambient temperature changes on the internal circuitry while weakening external electromagnetic interference. The modular design of this invention is compatible with various reference source chips (such as bandgap references and Zener diodes), and the regular layout of the heating circuit can adapt to different power requirements. It is suitable for a wide range of temperature settings and possesses strong engineering versatility. Ultimately, the reference voltage source module achieves a highly stable output voltage with a temperature coefficient of 1ppm / °C, solving the problem of high temperature drift in the reference voltage source output voltage and meeting the technical requirements of 0.01-class standard energy meters. The four-layer structure, consisting of two inner and two outer layers nested sequentially, works synergistically to achieve progressive protection effects of thermal field stabilization, electromagnetic isolation, thermal field maintenance, and secondary electromagnetic shielding. Together, they construct a highly stable thermodynamic and electromagnetic microenvironment, controlling chip temperature fluctuations within a set range, thereby reducing the impact of environmental interference on the temperature drift of the reference voltage.

[0024] Implementation of a reference voltage source constant temperature system The reference voltage source constant temperature system of the present invention includes a high thermal conductivity substrate. The high thermal conductivity substrate and a printed circuit board on which the reference voltage source functional circuit components (including the reference device and the reference source peripheral circuit) are soldered together form a double substrate stack structure. The printed circuit board is located at the bottom layer of the double substrate stack structure, and the high thermal conductivity substrate is located at the top layer of the double substrate stack structure. The high thermal conductivity substrate is soldered with a heating control circuit for keeping the high thermal conductivity substrate in a constant temperature environment. The high thermal conductivity substrate has a pre-set opening for accommodating the reference device body in the reference voltage source functional circuit components, so that the reference device body is placed in the opening of the high thermal conductivity substrate, thereby achieving temperature field uniformity of the reference device body.

[0025] Specifically, a dual-substrate stacked structure such as Figure 1As shown, the pins of the reference voltage source functional circuit components are soldered onto the bottom printed circuit board 1. The high thermal conductivity substrate is a top high thermal conductivity copper substrate 2, with the front side of the bottom printed circuit board 1 facing upwards. The top high thermal conductivity copper substrate 2 is slightly smaller than the bottom printed circuit board 1, and the top high thermal conductivity copper substrate 2 and the bottom printed circuit board 1 are fixed together by bent pins. After the main body of the reference source device is inserted into the opening 3 of the top high thermal conductivity copper substrate 2, it is soldered to the copper substrate to achieve double fixation of the top high thermal conductivity copper substrate 2 and the bottom printed circuit board 1.

[0026] An opening 3 for accommodating a reference device is formed on the top high thermal conductivity copper substrate 2. A heating control circuit is also soldered onto the top high thermal conductivity copper substrate 2. This heating control circuit includes a heating element, a heating control chip, and a temperature measurement unit. The temperature measurement unit measures the temperature of the high thermal conductivity substrate, and the heating control chip controls the heating element based on the temperature measured by the temperature measurement unit, keeping the temperature of the high thermal conductivity substrate within a constant temperature range. Figure 1 As shown, the heating device uses heating resistors 4, and there are multiple heating resistors 4 arranged in an array on the top high thermal conductivity copper substrate 2. They are welded to the surface of the top high thermal conductivity copper substrate 2 in a "grid topology" to ensure that the generated heat can be quickly and evenly conducted throughout the plane of the top high thermal conductivity copper substrate 2, forming a highly consistent basic heat source platform. The shape of the opening 3 can be set according to the actual situation, as long as it can accommodate the reference device, such as circular, rectangular, etc. In this embodiment, the reference device is a reference voltage chip or a reference diode device. That is, the reference voltage chip or reference diode device is a device that requires strict constant temperature control, so it needs to be set in the opening 3 of the top high thermal conductivity copper substrate 2. The physical nesting installation of the reference device can be achieved through the opening 3 of the top high thermal conductivity copper substrate 2. In this way, the reference device body and the hole wall of the high thermal conductivity copper substrate form an all-round surround, so that the core area of ​​the chip is surrounded by high thermal conductivity copper material, establishing a three-dimensional uniform thermal environment and achieving a uniform temperature field of the chip body.

[0027] like Figure 3 As shown, the bottom printed circuit board 1 and the top high thermal conductivity copper substrate 2 are electrically connected by bent pins 11, which also fix the circuit board. The reference device pins are soldered to the bottom printed circuit board 1, and the reference device body 10 is nested with the top high thermal conductivity copper substrate 2 and spot-welded to achieve double fixation. In addition, the bottom printed circuit board 1 and the top high thermal conductivity copper substrate 2 can be directly filled with insulating material to prevent the bottom printed circuit board 1 from touching the top high thermal conductivity copper substrate 2 and causing a short circuit. Considering that the reference voltage source will also be affected by the coupling interference of nearby power device heating, airflow disturbance and external electromagnetic noise, the present invention constructs a protective architecture around the above-mentioned double substrate stacked structure (also called functional module) 5. This protective architecture includes an insulating and heat-insulating material layer and an electromagnetic shielding layer to isolate the influence of external temperature and electromagnetic interference. Figure 2As shown, this invention employs a progressive four-layer composite protective architecture to achieve environmental isolation. The innermost layer of this protective architecture is a high-efficiency insulating and heat-insulating material layer (also called the inner insulation layer) 6 closely attached to the functional module 5, forming the inner insulation zone to lock the internal thermal field and slow down the outward loss of internal heat. Closely attached to the outside of the insulation layer 6 is the first electromagnetic shielding metal shell, which constitutes the inner shielding layer 7, serving both mechanical fixing and electromagnetic isolation functions. Outside the inner shielding layer 7, another layer of insulating and heat-insulating material is wrapped to form the inner insulation layer 8, creating a reinforced constant-temperature outer insulation zone as a second thermal barrier to further attenuate the impact of external temperature changes on the internal thermal balance. The outermost layer is sealed by the second electromagnetic shielding metal shell, which constitutes the outer shielding layer 9, providing a secondary electromagnetic isolation barrier to shield against complex external electromagnetic environments and enhance the rigidity and sealing of the overall structure.

[0028] The four-layer structure (inner insulation layer 6, inner shielding layer 7, outer insulation layer 8, and outer shielding layer 9) adopted in this invention are nested sequentially from the inside out, working synergistically to achieve a progressive protection effect of "thermal field stabilization → electromagnetic isolation → thermal field maintenance → secondary electromagnetic shielding" in sequence. Together, they construct a highly stable thermodynamic and electromagnetic microenvironment, effectively reducing the impact of environmental interference on the temperature drift of the reference voltage by controlling the chip temperature fluctuation within ±0.5°C.

[0029] This invention achieves constant temperature control of the reference voltage source through a dual-substrate stacking structure and a four-layer composite protection architecture, ensuring that the temperature coefficient of the voltage output by the reference voltage source module is less than 1ppm / ℃, meeting the requirements of a 0.01-level standard energy meter. It is also applicable to other high-precision applications of the reference voltage source.

Claims

1. A constant temperature system for a reference voltage source, characterized in that, The system includes a high thermal conductivity substrate, which, together with a printed circuit board on which the pins of the reference voltage source functional circuit components are soldered, forms a dual-substrate stack structure. The printed circuit board is located at the bottom layer of the dual-substrate stack structure, and the high thermal conductivity substrate is located at the top layer of the dual-substrate stack structure. A heating control circuit for keeping the high thermal conductivity substrate in a constant temperature environment is soldered onto the high thermal conductivity substrate. An opening is pre-set on the high thermal conductivity substrate to accommodate the reference device in the reference voltage source functional circuit components, so that the reference device body is placed in the opening of the high thermal conductivity substrate, thereby achieving temperature field uniformity of the reference device body.

2. The reference voltage source constant temperature system according to claim 1, characterized in that, The heating control circuit soldered on the high thermal conductivity substrate uses an array of heating resistors arranged in a grid topology on the high thermal conductivity substrate and soldered to the surface of the high thermal conductivity substrate.

3. The constant temperature system for the reference voltage source according to claim 1, characterized in that, The system also includes a protective architecture surrounding the dual-substrate stacked structure, which includes an insulating and heat-preserving material layer and an electromagnetic shielding layer to isolate external temperature effects and electromagnetic interference.

4. The constant temperature system for the reference voltage source according to claim 3, characterized in that, The aforementioned insulating and heat-preserving material layer includes an inner heat-preserving layer and an outer heat-preserving layer. The electromagnetic shielding layer includes an inner shielding layer and an outer shielding layer. The inner heat-preserving layer is located at the innermost layer and is attached to the outside of the double substrate stacked structure to lock the internal thermal field and slow down the loss of internal heat to the outside. The inner shielding layer is located outside the inner heat-preserving layer to achieve mechanical fixation and electromagnetic isolation. The outer heat-preserving layer is located outside the inner shielding layer to attenuate the impact of external temperature changes on the internal thermal balance. The outer shielding layer is located outside the outer heat-preserving layer to provide a secondary electromagnetic isolation barrier to shield the complex external electromagnetic environment.

5. The constant temperature system for the reference voltage source according to claim 2, characterized in that, The heating control circuit also includes a heating control chip and a temperature measurement unit. The temperature measurement unit is used to measure the temperature of the high thermal conductivity substrate, and the heating control chip is used to control the heating resistor according to the temperature measured by the temperature measurement unit, so that the temperature of the high thermal conductivity substrate is kept in a constant temperature range.

6. A reference voltage source, comprising reference voltage source functional circuit components, wherein the reference voltage source functional circuit components include a reference device, characterized in that, The reference voltage source functional circuit components have their pins soldered on a printed circuit board, and also includes a high thermal conductivity substrate. The high thermal conductivity substrate and the printed circuit board form a double substrate stack structure. The printed circuit board is located at the bottom layer of the double substrate stack structure, and the high thermal conductivity substrate is located at the top layer of the double substrate stack structure. The high thermal conductivity substrate has a heating control circuit soldered on it to keep it in a constant temperature environment. The high thermal conductivity substrate has pre-set openings for accommodating the reference device, so that the reference device body is placed in the openings of the high thermal conductivity substrate, thereby achieving temperature field uniformity of the reference device body.

7. The reference voltage source according to claim 6, characterized in that, The heating control circuit soldered on the high thermal conductivity substrate uses an array of heating resistors arranged in a grid topology on the high thermal conductivity substrate and soldered to the surface of the high thermal conductivity substrate.

8. The reference voltage source according to claim 6, characterized in that, The reference voltage source also includes a protective architecture surrounding the dual-substrate stacked structure, which includes an insulating and heat-insulating material layer and an electromagnetic shielding layer to isolate external temperature effects and electromagnetic interference.

9. The reference voltage source according to claim 8, characterized in that, The aforementioned insulating and heat-preserving material layer includes an inner heat-preserving layer and an outer heat-preserving layer. The electromagnetic shielding layer includes an inner shielding layer and an outer shielding layer. The inner heat-preserving layer is located at the innermost layer and is attached to the outside of the double substrate stacked structure to lock the internal thermal field and slow down the loss of internal heat to the outside. The inner shielding layer is located outside the inner heat-preserving layer to achieve mechanical fixation and electromagnetic isolation. The outer heat-preserving layer is located outside the inner shielding layer to attenuate the impact of external temperature changes on the internal thermal balance. The outer shielding layer is located outside the outer heat-preserving layer to provide a secondary electromagnetic isolation barrier to shield the complex external electromagnetic environment.

10. The reference voltage source according to claim 7, characterized in that, The heating control circuit also includes a heating control chip and a temperature measurement unit. The temperature measurement unit is used to measure the temperature of the high thermal conductivity substrate, and the heating control chip is used to control the heating resistor according to the temperature measured by the temperature measurement unit, so that the temperature of the high thermal conductivity substrate is kept in a constant temperature range.

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