Reliability acceleration factor calculation method, device and computer equipment

Abstract

The application relates to a reliability acceleration factor calculation method, device and computer equipment. The method comprises the following steps: obtaining first test parameters of an electronic device to be tested in a first test environment and second test parameters of the electronic device to be tested in a second test environment; the test parameters comprise function test parameters and interconnection test parameters; the environmental severity of the second test environment is higher than that of the first test environment; based on the first function test parameters, the second function test parameters and a preset physical model, a function failure acceleration factor of a component of the electronic device to be tested is determined; based on the first interconnection test parameters and the second interconnection test parameters, an interconnection failure acceleration factor of the electronic device to be tested is determined; and the reliability acceleration factor of the electronic device to be tested is calculated according to the function failure acceleration factor and the interconnection failure acceleration factor. The method can shorten the reliability test time of the electronic device.

Description

Technical Field

[0001] This application relates to the field of reliability testing technology, and in particular to a method, apparatus and computer equipment for calculating reliability acceleration factor. Background Technology

[0002] With the widespread use of electronic devices, reliability testing of these devices is necessary. For example, reliability testing of electronic devices related to aerospace technology, or reliability testing of electronic devices in ships and vehicles.

[0003] However, in traditional technologies, the reliability testing time is long when testing electronic devices with high reliability requirements. Summary of the Invention

[0004] Therefore, it is necessary to provide a reliability acceleration factor calculation method, apparatus, and computer equipment that can shorten the reliability testing time of electronic devices, in order to address the above-mentioned technical problems.

[0005] Firstly, this application provides a method for calculating a reliability acceleration factor, including:

[0006] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0007] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0008] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the electronic device under test is determined.

[0009] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0010] In one embodiment, the aforementioned preset physical model includes the Arrhenius model and the inverse power law model, and the aforementioned functional test parameters include test temperature and vibration power spectral density; the determination of the functional failure acceleration factor of the components of the electronic device under test based on the first functional test parameters, the second functional test parameters, and the preset physical model includes:

[0011] Based on the first test temperature, the second test temperature, the activation energy of the electronic device under test, and the Arrhenius model, the first acceleration factor of the electronic device under test under temperature stress conditions is obtained.

[0012] Based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model, the second acceleration factor of the vibration stress of the electronic device under test is obtained.

[0013] The functional failure acceleration factor is determined based on the first acceleration factor and the second acceleration factor.

[0014] In one embodiment, determining the functional failure acceleration factor based on a first acceleration factor and a second acceleration factor includes:

[0015] Determine the first proportional parameter, the second proportional parameter, and the third proportional parameter; the first proportional parameter is the proportion of failure of the electronic device under test caused by temperature stress, the second proportional parameter is the proportion of failure of the electronic device under test caused by vibration stress, and the third proportional parameter is the proportion of failure of the electronic device under test caused by the combined stress of temperature stress and vibration stress.

[0016] The functional failure acceleration factor is calculated based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0017] In one embodiment, the interconnect test parameters include the average failure time of the interconnect structure of the electronic device under test; the determination of the interconnect failure acceleration factor of the electronic device under test based on the first interconnect test parameters and the second interconnect test parameters includes:

[0018] The interconnect failure acceleration factor is determined based on the ratio of the first mean failure time to the second mean failure time.

[0019] In one embodiment, the reliability acceleration factor of the electronic device under test is calculated based on the functional failure acceleration factor and the interconnect failure acceleration factor, including:

[0020] Determine the first proportion of component functional failures in the total failures of the electronic device under test (EDT), and the second proportion of interconnect failures in the total failures of the EDT.

[0021] The reliability acceleration factor is obtained based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnection failure acceleration factor.

[0022] In one embodiment, the method further includes:

[0023] Based on the reliability acceleration factor, the test duration for reliability testing of the electronic device under test in the second test environment is determined, and the reliability test of the electronic device under test is carried out according to the test duration and the second test environment.

[0024] Secondly, this application also provides a reliability acceleration factor calculation device, comprising:

[0025] The acquisition module is used to acquire the first test parameters of the electronic device under test in a first test environment and the second test parameters in a second test environment; the test parameters include functional test parameters and interconnection test parameters; the environmental severity of the second test environment is higher than that of the first test environment;

[0026] The first determining module is used to determine the functional failure acceleration factor of the components of the electronic device under test based on the first functional test parameters, the second functional parameters and the preset physical model.

[0027] The second determining module is used to determine the interconnect failure acceleration factor of the electronic device under test based on the first interconnect test parameters and the second interconnect test parameters.

[0028] The calculation module is used to calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0029] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0030] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0031] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0032] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the components of the electronic device under test is determined.

[0033] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0034] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0035] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0036] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0037] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the electronic device under test is determined.

[0038] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0039] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0040] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0041] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0042] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the electronic device under test is determined.

[0043] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0044] The aforementioned reliability acceleration factor calculation method, apparatus, and computer equipment acquire first test parameters in a first test environment and second test parameters in a second test environment for the electronic device under test (EDT), where the environmental severity of the second test environment is higher than that of the first test environment. The test parameters include functional test parameters and interconnection test parameters. Based on the functional parameters and a preset physical model under different test environments, the functional failure acceleration factor of the components of the EDT can be determined. Based on the interconnection test parameters under different test environments, the interconnection failure acceleration factor of the EDT can be determined. Therefore, based on the functional failure acceleration factor and the interconnection failure acceleration factor, a failure acceleration factor considering the EDT as a whole can be obtained, ensuring the accuracy of the determined failure acceleration factor. This, in turn, ensures the accuracy of reliability testing of the EDT using the acquired failure acceleration factor, shortening the reliability testing time. Furthermore, since the determination of functional acceleration factors and interconnection failure acceleration factors can be applied to all electronic devices, this method is applicable to different types of electronic devices, ensuring the universality of this solution and its applicability to the reliability testing process of different types of electronic devices. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1 This is an application environment diagram of the reliability acceleration factor calculation method in one embodiment;

[0047] Figure 2 This is a flowchart illustrating a reliability acceleration factor calculation method in one embodiment;

[0048] Figure 3 This is a flowchart illustrating the reliability acceleration factor calculation method in another embodiment;

[0049] Figure 4 This is a flowchart illustrating the reliability acceleration factor calculation method in yet another embodiment;

[0050] Figure 5 This is a flowchart illustrating a method for determining the interconnect failure acceleration factor in one embodiment;

[0051] Figure 6This is a flowchart illustrating a method for determining the acceleration factor of an electronic product device in one embodiment.

[0052] Figure 7 This is a schematic diagram of the structure of a reliability acceleration factor calculation device in one embodiment;

[0053] Figure 8 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0054] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0055] It should be noted that the terms "first," "second," etc., used in this application can be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from the second element. The terms "comprising" and "having," and any variations thereof, used in this application, are intended to cover non-exclusive inclusion. The term "multiple" used in this application refers to two or more. The term "and / or" used in this application refers to one of the embodiments, or any combination of multiple embodiments.

[0056] The reliability acceleration factor calculation method provided in this application embodiment can be applied to, for example... Figure 1 In the application environment shown, the test system 102 communicates with the computer device 104 via a network. The test system 102 provides a test environment for the electronic device under test (DUT) and sends the test results to the computer device 104. The computer device 104 analyzes the reliability of the DUT based on the received test results to obtain the reliability test results. For example, the test system 102 may include a simulated test environment with test equipment and a user to test the DUT.

[0057] In one exemplary embodiment, such as Figure 2 As shown, a method for calculating the reliability acceleration factor is provided, and this method is applied to... Figure 1 Taking a computer device as an example, the explanation includes the following steps:

[0058] S201, acquire the first test parameters of the electronic device under test in the first test environment and the second test parameters in the second test environment; the test parameters include functional test parameters and interconnection test parameters; the environmental severity of the second test environment is higher than that of the first test environment.

[0059] The electronic device under test (DUT) can be an electronic device in aerospace technology, such as a flight control computer, various sensors, flight management computer, transmitter, receiver, etc., or it can be an electronic device in a ship or vehicle. It should be noted that the reliability acceleration factor calculation method provided in this application is applicable to the calculation of the reliability acceleration factor of electronic devices, but not applicable to the calculation of the reliability acceleration factor of electromechanical equipment or mechanical equipment.

[0060] For example, in this embodiment, the first test environment can be the normal operating environment of the electronic device under test, and the second test environment can be the operating environment that accelerates the aging and failure of the electronic device under test. That is, the first test environment can be the operating environment under normal operating conditions of the electronic device under test, and the second test environment is the operating environment under accelerated testing conditions. For example, the second test environment is a test environment built by applying stresses such as temperature, vibration, humidity, and electrical stress to normal operating conditions. It is understood that the environmental severity of the second test environment described in this embodiment is higher than that of the first test environment. That is, the environmental conditions of the second test environment are more severe than those of the first test environment, which will accelerate the damage process of the electronic device under test. It should be noted that electrical stress and humidity stress are not considered as accelerating stresses in the reliability accelerated test of the electronic device under test, but they are still retained in the reliability accelerated test. The conventional reliability test profile includes a 1-hour humidity control period (temperature greater than or equal to 31°C). To ensure that the failure mechanism of the product failure caused by the combined stress of temperature and humidity remains unchanged, a 1-hour humidity control period is set in the high-temperature holding section of the reliability accelerated test profile and applied in the high-temperature section of the accelerated test profile. In the accelerated reliability test profile, the electrical stress changes cyclically within the range specified in the power requirements, and the application method is consistent with that of the conventional reliability test profile.

[0061] It should be noted that the test parameters of the electronic device under test (DUT) in this embodiment include functional test parameters and interconnection test parameters. For example, the functional test parameters can be the component functional failure acceleration factors of the DUT, and the interconnection test parameters can be the interconnection failure acceleration factors of the DUT. As an example, the component functional failure acceleration factor can be an acceleration factor determination method that integrates the interaction between temperature and vibration, and the interconnection acceleration factor can be an acceleration factor determination method based on a fault physics model.

[0062] S202, based on the first functional test parameters, the second functional test parameters and the preset physical model, determine the functional failure acceleration factor of the components of the electronic device under test.

[0063] The preset physical model can be a temperature acceleration model, vibration acceleration model, electromigration acceleration model, etc., which are commonly used in the reliability testing of electronic equipment.

[0064] In this embodiment, as an optional implementation, the first functional test parameter and the second functional test parameter, along with the aforementioned preset physical model, can be used to obtain the first calculation result corresponding to the first functional test parameter and the second calculation result corresponding to the second functional test parameter. Then, based on the first calculation result and the second calculation result, the functional failure acceleration factor of the components of the electronic device under test can be obtained. For example, the ratio of the first calculation result and the second calculation result can be determined as the functional failure acceleration factor of the components of the electronic device under test.

[0065] S203, based on the first interconnect test parameters and the second interconnect test parameters, determine the interconnect failure acceleration factor of the electronic device under test.

[0066] Among them, the interconnection test parameters are the parameters related to the interconnection structure of the electronic device under test obtained by testing the electronic device under test in different test environments.

[0067] In this embodiment, as an optional implementation, the interconnect test parameters can be the average failure time of the interconnect structure of the electronic device under test. The first interconnect test parameters in the first test environment and the second interconnect test parameters in the second test environment can be obtained based on the fault physics model. Then, based on the first interconnect test parameters and the second interconnect test parameters, the interconnect acceleration factor of the electronic device under test can be obtained. For example, the ratio of the first interconnect test parameters and the second interconnect test parameters can be determined as the interconnect acceleration factor of the electronic device under test.

[0068] S204. Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0069] This application embodiment integrates the method for calculating the acceleration factor of functional failure for the self-failure of electronic components and the method for calculating the acceleration factor of interconnect failure for interconnect structure failure. Based on this, a series architecture of functional failure and interconnect failure is constructed to form a comprehensive reliability acceleration test method that considers the overall electronic product.

[0070] Assuming that the component failure modes and interconnect failure modes causing electronic product malfunctions are independent of each other, and that failure of any part will lead to electronic product failure, then as an optional implementation method, a failure acceleration factor of the electronic device under test (DUT) can be determined based on the functional failure acceleration factor and the interconnect failure acceleration factor. Based on the failure acceleration factor, the test duration for reliability testing of the DUT under a second test environment can be determined, and then reliability testing of the DUT can be performed according to the determined reliability test duration and the second test environment.

[0071] Furthermore, as an optional implementation, firstly, the first proportion of component functional failures in the total failures of the electronic device under test (DUT) and the second proportion of component interconnection failures in the total failures of the DUT can be determined. Based on these first and second proportions, the functional failure acceleration factor and the interconnection failure acceleration factor are weighted and summed to obtain the reliability acceleration factor of the DUT. As an example, this can be based on the formula... Determine the reliability acceleration factor of the electronic device under test, where This represents the reliability acceleration factor of the electronic device under test. Indicates the first percentage, This indicates the second percentage. Indicates the factor that accelerates functional failure. This represents the interconnect failure acceleration factor.

[0072] For example, the first and second proportions mentioned above can be determined based on historical experience or through experimentation.

[0073] In the aforementioned testing method for the electronic device under test (EDT), first test parameters in a first test environment and second test parameters in a second test environment are obtained, with the second test environment being more stringent than the first test environment. The test parameters include functional test parameters and interconnect test parameters. Based on the functional parameters and a preset physical model under different test environments, the functional failure acceleration factor of the components in the EDT can be determined. Similarly, based on the interconnect test parameters under different test environments, the interconnect failure acceleration factor of the EDT can be determined. Therefore, based on the functional failure acceleration factor and the interconnect failure acceleration factor, a comprehensive failure acceleration factor for the EDT can be obtained, ensuring the accuracy of the determined failure acceleration factor. This, in turn, ensures the accuracy of reliability testing of the EDT using the obtained failure acceleration factor, shortening the reliability testing time. Furthermore, since the method can be divided into determining functional acceleration factors and determining interconnect failure acceleration factors for all electronic devices, it is applicable to different types of electronic devices, ensuring the universality of this solution and its applicability to the reliability testing of various types of electronic devices.

[0074] In some scenarios, the aforementioned preset physical model may include the Arrhenius model and the inverse power law model. Correspondingly, the aforementioned functional test parameters may include test temperature and vibration power spectral density. In an exemplary embodiment, such as... Figure 3 As shown, the above S202 includes:

[0075] S301, based on the first test temperature, the second test temperature, the activation energy of the electronic device under test, and the Arrhenius model, obtains the first acceleration factor of the electronic device under test under temperature stress conditions.

[0076] The Arrhenius model is a physical model used to quantify the failure degree of electronic devices under test under accelerated temperature stress. For example, the Arrhenius model can be expressed as:

[0077] ;

[0078] In the formula, and The failure rate and lifetime characteristics of the electronic device under test at temperature T are quantified. Optionally, temperature T can be the first test temperature or the second test temperature; A is a constant related to the electronic device under test; k is the Boltzmann constant, a physical constant with a value of 8.6171×10-5eV / K. This represents the activation energy of the electronic device under test. It should be noted that... It can be determined based on theoretical analysis or by using experimental methods.

[0079] Furthermore, based on the aforementioned Arrhenius model and the activation energy of the electronic device under test... The following formula can be obtained for calculating the acceleration factor of the electronic device under test under temperature stress conditions:

[0080] ;

[0081] In the formula, The electronic device under test is The acceleration factor under temperature stress conditions, i.e., the first acceleration factor. The activation energy of the electronic device under test is determined based on theoretical analysis or experimental methods. and The first test temperature and the second test temperature are respectively the temperatures in a first test environment and a second test environment. As an optional implementation, the first test temperature and the second test temperature are respectively the temperatures in a first test environment and a second test environment, where the second test environment has more stringent conditions than the first test environment. As an optional implementation, the second test temperature is higher than the first test temperature.

[0082] S302, based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model, obtains the second acceleration factor of the vibration stress of the electronic device under test.

[0083] In this embodiment, the vibration power spectral density refers to the power parameter of vibration stress applied to the electronic device under test; the vibration stress acceleration rate is a constant for different parameter values ​​corresponding to different failure types; the inverse power law model is a physical model used to characterize the relationship between the vibration stress level and the degree of failure of the electronic device under test.

[0084] As an example, the acceleration factor under vibration stress conditions can be obtained using the following formula:

[0085] ;

[0086] In the formula, The electronic device under test The acceleration factor under vibration stress conditions, i.e., the second acceleration factor; and The first test vibration time and the second test vibration time are respectively; and These are the first vibration power spectral density and the second vibration power spectral density, respectively. Vibration stress acceleration rate.

[0087] As an optional implementation, the first vibration power spectral density and the second vibration power spectral density represent two vibration test conditions with different degrees of severity. For example, the first vibration power spectral density may correspond to parameters under a first test environment, while the second vibration power spectral density corresponds to parameters under a second test environment. The vibration stress acceleration rate can be selected according to the failure type. For example, in this embodiment, the vibration stress acceleration rate can be selected according to the component functional failure type of the electronic device under test. It can correspond to different values, generally between 3 and 5.

[0088] S303, determine the functional failure acceleration factor based on the first acceleration factor and the second acceleration factor.

[0089] As an optional implementation, the first acceleration factor obtained under temperature stress conditions and the second acceleration factor obtained under vibration stress conditions can be combined and weighted to obtain the functional failure acceleration factor of the components of the electronic device under test. Alternatively, the product of the first acceleration factor obtained under temperature stress conditions and the second acceleration factor obtained under vibration stress conditions can be used as the functional failure acceleration factor of the components of the electronic device under test.

[0090] In this embodiment, the first acceleration factor under temperature stress can be obtained using the Arrhenius model, the activation energy of the electronic device under test, the first test temperature under the first test environment, and the second test temperature under the second test environment. The second acceleration factor under vibration stress can be obtained using the inverse power law model, the first vibration power spectral density under the first test environment, the second vibration power spectral density under the second test environment, and the vibration stress acceleration rate. Then, based on the first and second acceleration factors, the functional failure acceleration factor of the components of the electronic device under test can be determined. The influence of temperature stress and vibration stress on the functional failure acceleration factor of the electronic device under test can be comprehensively considered, ensuring a comprehensive determination of the functional failure acceleration factor of the electronic device under test, thereby ensuring the accuracy of accelerated reliability testing of the electronic device under test.

[0091] In some scenarios, a proportional parameter for calculating the functional failure acceleration factor of the components in the electronic device under test (EDT) can be determined based on prior experience. The first acceleration factor and the second acceleration factor are then summed based on the obtained proportional parameter to obtain the functional failure acceleration factor of the components in the EDT. In an exemplary embodiment, such as... Figure 4 As shown, the above S303 includes:

[0092] S401, determine the first proportional parameter, the second proportional parameter, and the third proportional parameter; the first proportional parameter is the proportion of the electronic device under test that fails due to temperature stress, the second proportional parameter is the proportion of the electronic device under test that fails due to vibration stress, and the third proportional parameter is the proportion of the electronic device under test that fails due to the combined stress of temperature stress and vibration stress.

[0093] As an alternative implementation, the first proportional parameter, the second proportional parameter, and the third proportional parameter can be determined based on the weight of temperature stress, vibration stress, and the combined stress resulting from the combined effect of temperature stress and vibration stress in accelerating failure during reliability testing. It should be noted that the proportions of temperature stress, vibration stress, and combined stress can be determined based on prior values ​​from the historical application process of the electronic equipment under test.

[0094] S402, calculate the function failure acceleration factor based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0095] During the use of electronic devices under test (DUTs), environmental factors are often not singular. Besides considering the effects of individual temperature stress and vibration stress on the component failure acceleration factor, the combined effect of temperature and vibration stress can also be considered to accelerate failure. As an optional implementation method, the component failure acceleration factor of the DUT can be determined by the following formula:

[0096] ;

[0097] In the formula, As an accelerating factor for component failure, The first acceleration factor under temperature stress acceleration conditions. The second acceleration factor under vibration stress acceleration conditions. The first proportional parameter characterizes the proportion of failures caused solely by temperature stress. The second proportional parameter characterizes the proportion of failures caused solely by vibration stress. The third proportional parameter represents the proportion of failures caused by the combined effects of temperature and vibration stress.

[0098] In this embodiment, by determining the first proportional parameter for the failure of the electronic device under test caused by temperature stress, the second proportional parameter for the failure of the electronic device under test caused by vibration stress, and the third proportional parameter for the failure of the electronic device under test caused by the combined stress of temperature and vibration stress, the first acceleration factor of the electronic device under test under temperature stress and the second acceleration factor of vibration stress of the electronic device under test are calculated based on the first proportional parameter, the second proportional parameter and the third proportional parameter. The process of obtaining the functional failure acceleration factor of the electronic device under test is relatively simple, thereby ensuring the efficiency of determining the functional failure acceleration factor of the electronic device under test.

[0099] In some scenarios, the interconnect test parameters mentioned above include the average failure time of the interconnect structure of the electronic device under test, and the interconnect failure acceleration factor can be determined based on the average failure time of the interconnect structure of the electronic device under test; in an exemplary embodiment, the above S203 includes: determining the interconnect failure acceleration factor based on the ratio of the first average failure time and the second average failure time.

[0100] The first mean time to failure (MTBF) refers to the average failure time of the components in the electronic device under test (EDB) under the first test environment, while the second mean time to failure (MTBF) refers to the average failure time of the components in the EDB under the second test environment.

[0101] It is understandable that the electronic device under test (DUT) consists of components, printed circuit boards, and interconnects. The failure of the interconnects is not only related to the materials used and their activation energies, but also closely related to the soldering process. It is difficult to describe the impact of all these parameters on interconnect failure using a single physical model. Therefore, this embodiment uses a reliability simulation test method based on fault physics to calculate the acceleration factor of the interconnects. As an example, the calculation process is as follows: Figure 5As shown, specifically, it may include: First, using reliability simulation software, a virtual prototype for reliability testing is established based on the layout, component packaging, and interconnection structure of the printed circuit board of the electronic device under test; based on product reliability enhancement test information or empirical parameters, an accelerated test profile (i.e., a second test environment) is designed, and simulation is performed under the reliability accelerated test profile to identify the top N (e.g., Figure 5 The example shown has 20 weak points, and a conventional reliability qualification test profile (i.e., the first test environment) is designed. Simulations are performed on the conventional reliability qualification test profile to identify the first N weak points (e.g.,...). Figure 5 (Example 20) Weak links; then, based on the simulation of the first N weak links determined under two test profiles, calculate the ratio sequence of the failure time of the first N weak links under normal stress and accelerated stress, and analyze whether the ratio tends to stabilize as N increases; if the above ratio sequence converges, calculate the average failure time of the first N weak links of the electronic device under test under normal stress and accelerated stress conditions respectively. and Finally, based on the average failure time and Calculate the interconnect structure acceleration factor under combined stress. If the interconnect structure acceleration factor meets the test requirements (e.g., the test resource requirements of the electronic device under test), then the interconnect structure acceleration factor is determined as the interconnect failure acceleration test factor of the electronic device under test. If the test requirements are not met, return to the above steps until the interconnect failure acceleration test factor of the electronic device under test is determined.

[0102] It should be noted that the above-mentioned first N weak links refer to the N interconnect structures in the electronic device under test that are prone to failure, and the average failure time of the first N weak links refers to the average failure time of the interconnect structure of the electronic device under test.

[0103] As an optional implementation, the first mean time of failure (MTBF) under the first test environment and the second mean time of failure (MTBF) under the second test environment are first obtained based on the fault physics model; then, the interconnect failure acceleration factor is obtained according to the ratio of the first MTBF and the second MTBF. The interconnect failure acceleration factor can be expressed as:

[0104] ;

[0105] In the formula, As an interconnect failure acceleration factor, The first mean time to failure. This is the second mean time to failure.

[0106] In this embodiment, for the interconnect structure failure type in the overall failure mode of the electronic device under test, the interconnect failure acceleration factor is calculated by the fault physical model, which realizes a more comprehensive analysis of the reliability test of the electronic device under test. It breaks through the limitation that the acceleration factor is limited to the component level and extends the evaluation object to the whole equipment level, thereby obtaining a more reliable failure acceleration factor of the electronic device under test.

[0107] The following will combine Figure 6 The test method for the electronic device proposed in this application is explained and described, such as... Figure 6 As shown, the test method proposed in this application tests the electronic device under test from two aspects: the component functional failure acceleration factor and the interconnect failure acceleration factor. Specifically, the method may include the following steps:

[0108] S1, based on the first test temperature under the first test environment, the second test temperature under the second test environment, the activation energy of the electronic device under test and the Arrhenius model, the first acceleration factor of the electronic device under test under temperature stress is obtained.

[0109] S2, based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model, obtains the second acceleration factor of the vibration stress of the electronic device under test.

[0110] S3, determine the first proportional parameter, the second proportional parameter, and the third proportional parameter; the first proportional parameter is the proportion of failure of the electronic device under test caused by temperature stress, the second proportional parameter is the proportion of failure of the electronic device under test caused by vibration stress, and the third proportional parameter is the proportion of failure of the electronic device under test caused by the combined stress of temperature stress and vibration stress.

[0111] S4. Calculate the function failure acceleration factor based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0112] S5. Based on the ratio of the first mean failure time of the components in the electronic device under test under the first test environment to the second mean failure time of the components in the electronic device under test under the second test environment, determine the interconnection failure acceleration factor of the electronic device under test.

[0113] S6, determine the first proportion of component functional failures in the total failures of the electronic device under test (DUT), and the second proportion of component interconnection failures in the total failures of the DUT.

[0114] S7. Based on the first proportion and the second proportion, the functional failure acceleration factor and the interconnection failure acceleration factor are weighted and summed to obtain the reliability acceleration factor.

[0115] S8. Based on the reliability acceleration factor, determine the test duration for the reliability test of the electronic device under test, and then perform the reliability test on the electronic device under test according to the determined reliability test duration.

[0116] It should be noted that the descriptions of the above steps can be found in the relevant descriptions in the above embodiments, and their effects are similar, so they will not be repeated here.

[0117] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages in other steps. It is understood that the steps in different embodiments can be freely combined as needed, and all non-contradictory solutions formed by such combinations are within the scope of protection of this application.

[0118] Based on the same inventive concept, this application also provides a reliability acceleration factor calculation device for implementing the reliability acceleration factor calculation method described above. The solution provided by this device is similar to the implementation described in the above method; therefore, the specific limitations in one or more embodiments of the reliability acceleration factor calculation device provided below can be found in the limitations of the reliability acceleration factor calculation method described above, and will not be repeated here.

[0119] In one exemplary embodiment, such as Figure 7 As shown, a reliability acceleration factor calculation device is provided, comprising: an acquisition module, a first determination module, a second determination module, and a calculation module, wherein:

[0120] The acquisition module is used to acquire the first test parameters of the electronic device under test in a first test environment and the second test parameters in a second test environment; the test parameters include functional test parameters and interconnection test parameters; the environmental severity of the second test environment is higher than that of the first test environment.

[0121] The first determining module is used to determine the functional failure acceleration factor of the components of the electronic device under test based on the first functional test parameters, the second functional parameters, and the preset physical model.

[0122] The second determining module is used to determine the interconnect failure acceleration factor of the electronic device under test based on the first interconnect test parameters and the second interconnect test parameters.

[0123] The calculation module is used to calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0124] The reliability acceleration factor calculation device provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, so it will not be described again here.

[0125] Based on the above embodiments, optionally, the preset physical model includes the Arrhenius model and the inverse power law model, and the functional test parameters include test temperature and vibration power spectral density; the first determining module includes: a first acquisition unit, a second acquisition unit, and a first determining unit, wherein:

[0126] The first acquisition unit is used to obtain the first acceleration factor of the electronic device under test under temperature stress conditions based on the first test temperature, the second test temperature, the activation energy of the electronic device under test, and the Arrhenius model.

[0127] The second acquisition unit is used to obtain the second acceleration factor of the vibration stress of the electronic device under test based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model.

[0128] The first determining unit is used to determine the functional failure acceleration factor based on the first acceleration factor and the second acceleration factor.

[0129] The reliability acceleration factor calculation device provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, so it will not be described again here.

[0130] Based on the above embodiments, optionally, the first determining unit is specifically used to determine a first proportional parameter, a second proportional parameter, and a third proportional parameter; the first proportional parameter is the proportion of failure of the electronic device under test caused by temperature stress, the second proportional parameter is the proportion of failure of the electronic device under test caused by vibration stress, and the third proportional parameter is the proportion of failure of the electronic device under test caused by the combined stress of temperature stress and vibration stress; and a functional failure acceleration factor is calculated based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0131] The reliability acceleration factor calculation device provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, so it will not be described again here.

[0132] Based on the above embodiments, the interconnection test parameters include the average failure time of the components of the electronic device under test. Optionally, the second determining module includes: a second determining unit, wherein:

[0133] The second determining unit is used to determine the interconnect failure acceleration factor based on the ratio of the first average failure time and the second average failure time.

[0134] The reliability acceleration factor calculation device provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, so it will not be described again here.

[0135] Optionally, based on the above embodiments, the apparatus further includes: a testing module, wherein:

[0136] The testing module is used to determine the test duration for reliability testing of the electronic device under test in the second test environment based on the reliability acceleration factor, and to perform reliability testing on the electronic device under test according to the test duration and the second test environment.

[0137] The reliability acceleration factor calculation device provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, so it will not be described again here.

[0138] Based on the above embodiments, the reliability acceleration factor of the electronic device under test is calculated according to the functional failure acceleration factor and the interconnect failure acceleration factor. Optionally, the above device includes: a third determining module, specifically used to determine the first proportion of component functional failures in the faults of the electronic device under test and the second proportion of interconnect failures in the faults of the electronic device under test; and to obtain the reliability acceleration factor based on the first proportion, the second proportion, the functional failure acceleration factor and the interconnect failure acceleration factor.

[0139] The reliability acceleration factor calculation device provided in this embodiment can execute the above method embodiment, and its implementation principle and technical effect are similar, so it will not be described again here.

[0140] Each module in the aforementioned reliability acceleration factor calculation device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0141] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 8As shown, this computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operating system and computer programs stored in the non-volatile storage media. The database stores the Arrenness model and the inverse power law model. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communication with external terminals via a network connection. When executed by the processor, the computer program implements a reliability acceleration factor calculation method.

[0142] Those skilled in the art will understand that Figure 8 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0143] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0144] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0145] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0146] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the electronic device under test is determined.

[0147] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0148] In one embodiment, the aforementioned preset physical model includes the Arrhenius model and the inverse power law model, and the aforementioned functional test parameters include test temperature and vibration power spectral density; when the processor executes the computer program, it also performs the following steps:

[0149] Based on the first test temperature, the second test temperature, the activation energy of the electronic device under test, and the Arrhenius model, the first acceleration factor of the electronic device under test under temperature stress is obtained; based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model, the second acceleration factor of the vibration stress of the electronic device under test is obtained; based on the first acceleration factor and the second acceleration factor, the functional failure acceleration factor is determined.

[0150] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0151] Determine the first proportional parameter, the second proportional parameter, and the third proportional parameter; the first proportional parameter is the proportion of failure of the electronic device under test caused by temperature stress, the second proportional parameter is the proportion of failure of the electronic device under test caused by vibration stress, and the third proportional parameter is the proportion of failure of the electronic device under test caused by the combined stress of temperature stress and vibration stress.

[0152] The functional failure acceleration factor is calculated based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0153] In one embodiment, the interconnect test parameters include the mean time to failure of the interconnect structure of the electronic device under test; the processor, when executing the computer program, also performs the following steps:

[0154] The interconnect failure acceleration factor is determined based on the ratio of the first mean failure time to the second mean failure time.

[0155] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0156] Determine the first proportion of component functional failures in the total failures of the electronic device under test (EDT), and the second proportion of interconnect failures in the total failures of the EDT.

[0157] The reliability acceleration factor is obtained based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnection failure acceleration factor.

[0158] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0159] Based on the reliability acceleration factor, the test duration for reliability testing of the electronic device under test in the second test environment is determined, and the reliability test of the electronic device under test is carried out according to the test duration and the second test environment.

[0160] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0161] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0162] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0163] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the components of the electronic device under test is determined.

[0164] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0165] In one embodiment, the aforementioned preset physical model includes the Arrhenius model and the inverse power law model, and the aforementioned functional test parameters include test temperature and vibration power spectral density; when the computer program is executed by the processor, it also performs the following steps:

[0166] Based on the first test temperature, the second test temperature, the activation energy of the electronic device under test, and the Arrhenius model, the first acceleration factor of the electronic device under test under temperature stress is obtained; based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model, the second acceleration factor of the vibration stress of the electronic device under test is obtained; based on the first acceleration factor and the second acceleration factor, the functional failure acceleration factor is determined.

[0167] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0168] Determine the first proportional parameter, the second proportional parameter, and the third proportional parameter; the first proportional parameter is the proportion of failure of the electronic device under test caused by temperature stress, the second proportional parameter is the proportion of failure of the electronic device under test caused by vibration stress, and the third proportional parameter is the proportion of failure of the electronic device under test caused by the combined stress of temperature stress and vibration stress.

[0169] The functional failure acceleration factor is calculated based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0170] In one embodiment, the interconnect test parameters include the mean time to failure of the interconnect structure of the electronic device under test; when the computer program is executed by the processor, it further performs the following steps:

[0171] The interconnect failure acceleration factor is determined based on the ratio of the first mean failure time to the second mean failure time.

[0172] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0173] Determine the first proportion of component functional failures in the total failures of the electronic device under test (EDT), and the second proportion of interconnect failures in the total failures of the EDT.

[0174] The reliability acceleration factor is obtained based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnection failure acceleration factor.

[0175] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0176] Based on the reliability acceleration factor, the test duration for reliability testing of the electronic device under test in the second test environment is determined, and the reliability test of the electronic device under test is carried out according to the test duration and the second test environment.

[0177] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0178] The test parameters of the electronic device under test are obtained in a first test environment and a second test environment. The test parameters include functional test parameters and interconnection test parameters. The environmental severity of the second test environment is higher than that of the first test environment.

[0179] Based on the first functional test parameters, the second functional test parameters, and the preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined.

[0180] Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the electronic device under test is determined.

[0181] Calculate the reliability acceleration factor of the electronic device under test based on the functional failure acceleration factor and the interconnect failure acceleration factor.

[0182] In one embodiment, the aforementioned preset physical model includes the Arrhenius model and the inverse power law model, and the aforementioned functional test parameters include test temperature and vibration power spectral density; when the computer program is executed by the processor, it also performs the following steps:

[0183] Based on the first test temperature, the second test temperature, the activation energy of the electronic device under test, and the Arrhenius model, the first acceleration factor of the electronic device under test under temperature stress is obtained; based on the first vibration power spectral density, the second vibration power spectral density, the vibration stress acceleration rate, and the inverse power law model, the second acceleration factor of the vibration stress of the electronic device under test is obtained; based on the first acceleration factor and the second acceleration factor, the functional failure acceleration factor is determined.

[0184] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0185] Determine the first proportional parameter, the second proportional parameter, and the third proportional parameter; the first proportional parameter is the proportion of failure of the electronic device under test caused by temperature stress, the second proportional parameter is the proportion of failure of the electronic device under test caused by vibration stress, and the third proportional parameter is the proportion of failure of the electronic device under test caused by the combined stress of temperature stress and vibration stress.

[0186] The functional failure acceleration factor is calculated based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

[0187] In one embodiment, the interconnect test parameters include the mean time to failure of the interconnect structure of the electronic device under test; when the computer program is executed by the processor, it further performs the following steps:

[0188] The interconnect failure acceleration factor is determined based on the ratio of the first mean failure time to the second mean failure time.

[0189] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0190] Determine the first proportion of component functional failures in the total failures of the electronic device under test (EDT), and the second proportion of interconnect failures in the total failures of the EDT.

[0191] The reliability acceleration factor is obtained based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnection failure acceleration factor.

[0192] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0193] Based on the reliability acceleration factor, the test duration for reliability testing of the electronic device under test in the second test environment is determined, and the reliability test of the electronic device under test is carried out according to the test duration and the second test environment.

[0194] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.

[0195] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0196] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for calculating a reliability acceleration factor, characterized in that, The method includes: The test parameters of the electronic device under test are obtained in a first test environment and a second test environment, respectively; the test parameters include functional test parameters and interconnection test parameters; the environmental severity of the second test environment is higher than that of the first test environment. Based on first functional test parameters, second functional test parameters, and a preset physical model, the functional failure acceleration factor of the components of the electronic device under test is determined. The preset physical model includes the Arrhenius model and the inverse power law model, and the functional test parameters include test temperature and vibration power spectral density. Specifically, determining the functional failure acceleration factor of the components of the electronic device under test based on the first functional test parameters, second functional test parameters, and the preset physical model includes: obtaining a first acceleration factor of the electronic device under test under temperature stress conditions based on the first test temperature, second test temperature, activation energy of the electronic device under test, and the Arrhenius model; obtaining a second acceleration factor of vibration stress of the electronic device under test based on the first vibration power spectral density, second vibration power spectral density, vibration stress acceleration rate, and the inverse power law model; and determining the functional failure acceleration factor based on the first acceleration factor and the second acceleration factor. Based on the first interconnect test parameters and the second interconnect test parameters, the interconnect failure acceleration factor of the electronic device under test is determined; the interconnect test parameters include the average failure time of the interconnect structure of the electronic device under test; the determination of the interconnect failure acceleration factor of the electronic device under test based on the first interconnect test parameters and the second interconnect test parameters includes: determining the interconnect failure acceleration factor based on the ratio of the first average failure time and the second average failure time. Determine the first proportion of component functional failures in the total failures of the electronic device under test (EDT), and the second proportion of interconnect failures in the total failures of the EDT. Based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnect failure acceleration factor, obtain the reliability acceleration factor of the EDT.

2. The method according to claim 1, characterized in that, Determining the function failure acceleration factor based on the first acceleration factor and the second acceleration factor includes: Determine a first proportional parameter, a second proportional parameter, and a third proportional parameter; the first proportional parameter is the proportion of the electronic device under test that fails due to temperature stress, the second proportional parameter is the proportion of the electronic device under test that fails due to vibration stress, and the third proportional parameter is the proportion of the electronic device under test that fails due to the combined stress of temperature stress and vibration stress. The functional failure acceleration factor is calculated based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor.

3. The method according to claim 2, characterized in that, The step of calculating the functional failure acceleration factor based on the first proportional parameter, the second proportional parameter, the third proportional parameter, the first acceleration factor, and the second acceleration factor includes: According to the formula Calculate the functional failure acceleration factor, where, This is the factor that accelerates the failure of the aforementioned function. The first acceleration factor, The second acceleration factor, This is the first proportional parameter. This is the second proportional parameter. This refers to the third proportional parameter.

4. The method according to claim 3, characterized in that, The process of determining the first proportional parameter, the second proportional parameter, and the third proportional parameter includes: The first proportional parameter, the second proportional parameter, and the third proportional parameter are determined based on the weight of the combined stress, including temperature stress, vibration stress, and the combined effect of temperature stress and vibration stress, in accelerating failure during reliability testing.

5. The method according to claim 1, characterized in that, The step of obtaining the reliability acceleration factor of the electronic device under test based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnect failure acceleration factor includes: The reliability acceleration factor is obtained by weighted summing the functional failure acceleration factor and the interconnect failure acceleration factor based on the first proportion and the second proportion.

6. The method according to claim 1, characterized in that, The method further includes: Based on the reliability acceleration factor, the test duration for reliability testing of the electronic device under test in the second test environment is determined, and the reliability test of the electronic device under test is performed according to the test duration and the second test environment.

7. A reliability acceleration factor calculation device, characterized in that, The device includes: The acquisition module is used to acquire first test parameters of the electronic device under test in a first test environment and second test parameters in a second test environment; the test parameters include functional test parameters and interconnection test parameters; the environmental severity of the second test environment is higher than that of the first test environment; A first determining module is configured to determine the functional failure acceleration factor of the components of the electronic device under test (DUT) based on first functional test parameters, second functional parameters, and a preset physical model; the preset physical model includes an Arrhenius model and an inverse power law model, and the functional test parameters include test temperature and vibration power spectral density; the first determining module includes: a first acquiring unit, configured to obtain a first acceleration factor of the DUT under temperature stress conditions based on a first test temperature, a second test temperature, the activation energy of the DUT, and the Arrhenius model; a second acquiring unit, configured to obtain a second acceleration factor of vibration stress of the DUT based on a first vibration power spectral density, a second vibration power spectral density, vibration stress acceleration rate, and the inverse power law model; and a first determining unit, configured to determine the functional failure acceleration factor based on the first acceleration factor and the second acceleration factor. The second determining module is used to determine the interconnect failure acceleration factor of the electronic device under test based on the first interconnect test parameters and the second interconnect test parameters; the interconnect test parameters include the average failure time of the interconnect structure of the electronic device under test; the second determining module includes: a second determining unit, used to determine the interconnect failure acceleration factor based on the ratio of the first average failure time and the second average failure time; The calculation module is used to determine the first proportion of component functional failures in the total failures of the electronic device under test (DUT) and the second proportion of interconnect failures in the total failures of the DUT. Based on the first proportion, the second proportion, the functional failure acceleration factor, and the interconnect failure acceleration factor, the reliability acceleration factor of the DUT is obtained.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

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