Silicon carbide power device and manufacturing method thereof
By designing an interleaved ring injection region and injection compensation region terminal structure in silicon carbide power devices, the shortcomings of traditional structures in terms of withstand voltage are solved, higher breakdown voltage and electric field uniformity are achieved, and the miniaturization of devices is promoted.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
- Filing Date
- 2024-10-21
- Publication Date
- 2026-04-21
AI Technical Summary
Existing silicon carbide power device termination structures have limitations in reducing and increasing breakdown voltage. Traditional field-limiting loops and junction termination extension structures cannot be further optimized, resulting in insufficient withstand voltage.
The device employs a terminal structure formed around the well region in a silicon carbide substrate, including spaced-apart annular implantation regions and implantation compensation regions. The implantation compensation regions are staggered with the annular implantation regions, and an implantation compensation block is formed through an ion implantation process to improve the device's breakdown voltage capability.
This improves the breakdown voltage of silicon carbide power devices, enhances electric field uniformity, and enables miniaturization and improved voltage withstand capability.
Smart Images
Figure CN121908600A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a silicon carbide power device and its manufacturing method. Background Technology
[0002] Modern technology is constantly placing higher demands on semiconductor power devices in terms of size, reliability, voltage withstand capability, and power consumption. As transistor feature sizes shrink, due to physical limitations such as the short-channel effect and manufacturing costs, mainstream silicon-based materials and CMOS technology are reaching the 10-nanometer process node and are finding it difficult to make further improvements.
[0003] Silicon carbide (SiC) has a larger bandgap than silicon, allowing for higher doping concentrations and smaller epitaxial layer thicknesses compared to silicon power devices of the same voltage rating. This significantly reduces forward on-resistance and power loss. Furthermore, SiC possesses high thermal conductivity and high-temperature resistance, making it suitable for high-current, high-power applications. This reduces the requirements for heat dissipation equipment, shrinks device size, improves reliability, and lowers costs. Therefore, SiC is considered a next-generation integrated circuit semiconductor material with broad application prospects.
[0004] Currently, in the design and fabrication of silicon carbide power devices, especially high-voltage power devices, in order to reduce the junction edge electric field and improve the actual withstand voltage capability of the device, the device needs to have a good termination structure, such as field limiting ring (FLR) and junction termination extension (JTE).
[0005] Traditional field-limiting ring structures require a reduction in inter-ring spacing as epitaxial density increases. However, limitations imposed by process capabilities, specifically the minimum lithographic dimension, prevent further miniaturization, leading to a decrease in breakdown voltage. Employing junction-terminated extension structures necessitates increasing the implantation dose, which significantly reduces the peak breakdown voltage and further degrades reliability. Therefore, effectively improving the breakdown voltage capability of silicon carbide power devices remains a challenge for those skilled in the art. Summary of the Invention
[0006] The purpose of this invention is to provide a silicon carbide power device and its manufacturing method, so as to effectively improve the withstand voltage capability of the silicon carbide power device.
[0007] To address the aforementioned technical problems, the present invention provides a silicon carbide power device, comprising: a silicon carbide substrate, a well region formed in the silicon carbide substrate, and a termination structure formed in the silicon carbide substrate and surrounding the well region; wherein the termination structure includes m spaced annular injection regions and n spaced injection compensation regions, where m and n are positive integers and m ≥ n, and the n injection compensation regions and n annular injection regions are arranged at intervals from the well region, the injection compensation regions include multiple spaced injection compensation blocks and the injection compensation regions are connected to adjacent annular injection regions.
[0008] Optionally, in the silicon carbide power device, two adjacent injection compensation regions are staggered, and two injection compensation regions separated by one injection compensation region are aligned.
[0009] Optionally, in the silicon carbide power device, the width of the injection compensation block in the injection compensation region near the well region is greater than or equal to the width of the injection compensation block in the injection compensation region away from the well region, wherein the width of the injection compensation block refers to the dimension of the injection compensation block along the circumferential direction of the injection compensation region.
[0010] Optionally, in the silicon carbide power device, the width of the first gap between two adjacent injection compensation blocks in the injection compensation region near the well region is less than or equal to the width of the first gap between two adjacent injection compensation blocks in the injection compensation region away from the well region, wherein the width of the first gap between two adjacent injection compensation blocks refers to the dimension of the first gap along the circumference of the injection compensation region.
[0011] Optionally, in the silicon carbide power device, the width of the first gap is between 0.5 μm and 1.5 μm.
[0012] Optionally, in the silicon carbide power device, the n injection compensation regions are divided into multiple injection compensation region groups, each group of injection compensation region groups includes three or fewer injection compensation regions, and the size and arrangement of each injection compensation region in each group of injection compensation region groups are the same.
[0013] Optionally, in the silicon carbide power device, the ring width of the annular injection region near the well region is greater than or equal to the ring width of the annular injection region away from the well region, wherein the ring width of the annular injection region refers to the radial dimension of the annular injection region from near the well region to away from the well region.
[0014] Optionally, in the silicon carbide power device, the ring width of the injection compensation region near the well region is less than or equal to the ring width of the injection compensation region away from the well region, and / or, the ring width of the second gap between two adjacent annular injection regions near the well region is less than or equal to the ring width of the second gap between two adjacent annular injection regions away from the well region; wherein, the ring width of the injection compensation region refers to the radial dimension of the injection compensation region from near the well region to away from the well region, and the ring width of the second gap between two adjacent annular injection regions refers to the radial dimension of the second gap from near the well region to away from the well region.
[0015] The present invention also provides a method for manufacturing a silicon carbide power device, the method comprising:
[0016] Provide silicon carbide substrates;
[0017] A well region is formed in the silicon carbide substrate by a first ion implantation process; and
[0018] A termination structure is formed in the silicon carbide substrate by a second ion implantation process. The termination structure surrounds the well region and includes m spaced annular implantation regions and n spaced implantation compensation regions, where m and n are positive integers and m ≥ n. The n implantation compensation regions and n annular implantation regions are arranged at intervals from the well region. The implantation compensation region includes multiple spaced implantation compensation blocks and is connected to the adjacent annular implantation regions.
[0019] Optionally, in the method for manufacturing silicon carbide power devices, while forming a terminal structure in the silicon carbide substrate through a second ion implantation process, a source / drain doped region is also formed in the well region.
[0020] In the silicon carbide power device and its manufacturing method provided by the present invention, a termination structure is formed in a silicon carbide substrate. The termination structure surrounds the well region and includes m spaced annular injection regions and n spaced injection compensation regions, where m and n are positive integers and m ≥ n. The n injection compensation regions and n annular injection regions are arranged at intervals starting from the well region. Each injection compensation region includes multiple spaced injection compensation blocks and is connected to adjacent annular injection regions. The termination structure effectively improves the breakdown voltage capability of the silicon carbide power device. The n injection compensation regions and n annular injection regions arranged at intervals starting from the well region compensate for the annular injection regions, thus achieving a higher breakdown voltage and a uniform electric field with fewer annular injection regions, thereby enabling miniaturization of the silicon carbide power device. Attached Figure Description
[0021] Figure 1 This is a cross-sectional schematic diagram of a silicon carbide power device according to an embodiment of the present invention.
[0022] Figure 2 This is a partial top view of a terminal structure according to an embodiment of the present invention.
[0023] Figure 3 This is a partial top view of the terminal structure according to another embodiment of the present invention.
[0024] The reference numerals in the attached figures are explained as follows:
[0025] 10-Silicon carbide power device; 100-Silicon carbide substrate; 110-Well region; 120-Termination structure; 121-Annular implantation region; 122-Second gap; 123-Implantation compensation region; 1230-Implantation compensation block; 1231-First gap. Detailed Implementation
[0026] The silicon carbide power device and its manufacturing method proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this invention.
[0027] The terminology used in this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. Unless otherwise defined in this application, the technical or scientific terms used in this invention should be understood in their ordinary sense by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, "a" or "one," and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. "A plurality" or "several" indicates two or more. Unless otherwise indicated, terms such as "upper / upper layer," "lower / lower layer," and similar terms are for ease of description only and are not limited to a location or spatial orientation. Terms such as "comprising" or "including" mean that the element or object preceding "comprising" covers the element or object listed following "comprising" or "including" and its equivalents, and does not exclude other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections and can include electrical connections, whether direct or indirect. The singular forms “a,” “the,” and “the” used in this specification and appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.
[0028] For details, please refer to Figures 1 to 3 ,in, Figure 1 This is a cross-sectional schematic diagram of a silicon carbide power device according to an embodiment of the present invention; Figure 2 This is a partial top view of a terminal structure according to an embodiment of the present invention; Figure 3 This is a partial top view of the terminal structure according to another embodiment of the present invention.
[0029] like Figures 1 to 3 As shown in the embodiment of this application, the silicon carbide power device 10 includes: a silicon carbide substrate 100, a well region 110 formed in the silicon carbide substrate 100, and a terminal structure 120 formed in the silicon carbide substrate 100 and surrounding the well region 110; wherein, the terminal structure 120 includes m spaced annular injection regions 121 and n spaced injection compensation regions 123, where m and n are positive integers and m≥n, and the n injection compensation regions 123 and the n annular injection regions 121 are arranged at intervals starting from the well region 110, the injection compensation region 123 includes a plurality of spaced injection compensation blocks 1230 and the injection compensation region 123 is connected to the adjacent annular injection region 121.
[0030] like Figures 1 to 3As shown, each injection compensation region 123 includes a plurality of injection compensation blocks 1230, with adjacent injection compensation blocks 1230 separated by a first gap 1231. In this embodiment, m is greater than n. Among the n annular injection regions 121 closest to the well region 110, adjacent annular injection regions 121 are separated by the injection compensation region 123. Among the remaining m-n+1 annular injection regions 121 (i.e., from the nth annular injection region 121 to the mth annular injection region 121 closest to the well region 110), adjacent annular injection regions 121 are separated by a second gap 122. In other embodiments of this application, m can also be equal to n, and correspondingly, adjacent annular injection regions 121 are all separated by the injection compensation region 123.
[0031] The annular implantation region 121 and the implantation compensation block 1230 are doped structures formed by ion implantation. In this embodiment, the second gap 122 and the first gap 1231 are intrinsic structures. In other embodiments of this application, the second gap 122 and the first gap 1231 may also be doped structures, wherein the doping concentration of the annular implantation region 121 and the implantation compensation block 1230 is greater than the doping concentration of the second gap 122 and the first gap 1231.
[0032] For further information, please refer to the following: Figure 1 and Figure 2 In this embodiment, ten annular injection regions 121 and six injection compensation regions 123 are schematically shown, where m is 10 and n is 6. Starting from the well region 110, the six injection compensation regions 123 and the six annular injection regions 121 are arranged sequentially at intervals. Here, the first injection compensation region 123 surrounds and is connected to the well region 110, and the first annular injection region 121 surrounds and is connected to the first injection compensation region 123; the second injection compensation region 123 surrounds and is connected to the first annular injection region 121, the second annular injection region 121 surrounds and is connected to the second injection compensation region 123; and so on; here up to the sixth injection compensation region 123 surrounds and is connected to the fifth annular injection region 121, and the sixth annular injection region 121 surrounds and is connected to the sixth injection compensation region 123.
[0033] In this embodiment, the seventh annular injection region 121 and the sixth annular injection region 121 are arranged at intervals, with a second gap 122 between them; the eighth annular injection region 121 and the seventh annular injection region 121 are arranged at intervals, with a second gap 122 between them; the ninth annular injection region 121 and the eighth annular injection region 121 are arranged at intervals, with a second gap 122 between them; the tenth annular injection region 121 and the ninth annular injection region 121 are arranged at intervals, with a second gap 122 between them. That is, the sixth to tenth annular injection regions 121 are arranged at intervals, with adjacent annular injection regions 121 separated by the second gap 122.
[0034] like Figure 3 As shown, in other embodiments of this application, more or fewer of the annular injection regions 121 and the injection compensation regions 123 may be formed. Specifically, n injection compensation regions 123 and n annular injection regions 121 are arranged at intervals starting from the well region 110; m-n+1 annular injection regions 121 farther from the well region 110 are separated by the second gap 122. That is, from the nth annular injection region 121 to the mth annular injection region 121 starting from the well region 110, they are arranged at intervals, and adjacent annular injection regions 121 are separated by the second gap 122.
[0035] like Figure 1 and Figure 2 As shown, in this embodiment, adjacent injection compensation regions 123 are staggered, and two injection compensation regions 123 separated by one injection compensation region 123 are aligned. That is, the injection compensation blocks 1230 of adjacent injection compensation regions 123 are staggered, and the injection compensation blocks 1230 of two injection compensation regions 123 separated by one injection compensation region 123 are aligned; also, the first gaps 1231 of adjacent injection compensation regions 123 are staggered, and the first gaps 1231 of two injection compensation regions 123 separated by one injection compensation region 123 are aligned. This improves the uniformity of the edge electric field of the formed silicon carbide power device.
[0036] In this embodiment, when two adjacent injection compensation regions 123 are arranged in an alternating manner, the injection compensation block 1230 of one injection compensation region 123 is aligned with the first gap 1231 of the other injection compensation region 123. That is, the centerline of the injection compensation block 1230 of one injection compensation region 123 (along the direction from the injection compensation region 123 closest to the well region 110 to the injection compensation region 123 furthest from the well region 110, the same below) is on a straight line with the centerline of the first gap 1231 of the other injection compensation region 123. When two injection compensation regions 123 are arranged with a gap of one injection compensation region 123 between them, the centerline of the injection compensation block 1230 of one injection compensation region 123 is aligned with the centerline of the injection compensation block 1230 of the other injection compensation region 123.
[0037] like Figure 2 As shown in one embodiment of this application, specifically, starting from the injection compensation region 123 closest to the well region 110, the first injection compensation region 123 (i.e., the injection compensation region 123 closest to the well region 110), the third injection compensation region 123, and the fifth injection compensation region 123 are aligned; the second injection compensation region 123, the fourth injection compensation region 123, and the sixth injection compensation region 123 are aligned; at the same time, the odd-numbered injection compensation regions 123 and the even-numbered injection compensation regions 123 are alternately arranged.
[0038] like Figure 3 As shown, in other embodiments of this application, two adjacent injection compensation regions 123 may not be completely aligned or staggered, but rather partially aligned or partially staggered. For example, two adjacent injection compensation regions 123 may be staggered, wherein the injection compensation block 1230 of one injection compensation region 123 faces the first gap 1231 of the other injection compensation region 123, and at the same time, the centerline of some or all of the injection compensation blocks 1230 and the centerline of the first gap 1231 are not on the same line.
[0039] Furthermore, the injection compensation regions 123 can also be arranged in groups. Specifically, the multiple injection compensation regions 123 can be divided into multiple injection compensation region groups, each group comprising three or fewer injection compensation regions 123. Within each group, the injection compensation regions 123 have the same size and / or arrangement. The multiple injection compensation regions 123 can be divided into different injection compensation region groups. For example, one injection compensation region group may include two injection compensation regions 123, one injection compensation region group may include three injection compensation regions 123, or one injection compensation region group may include only one injection compensation region 123.
[0040] For example, the six injection compensation regions 123 can be divided into three groups from the closest to the well region 110 to the furthest from the well region 110. The two injection compensation regions 123 closest to the well region 110 form the first group, the two next closest to the well region 110 form the second group, and the two furthest from the well region 110 form the third group. The injection compensation blocks 1230 of the two injection compensation regions 123 in the first group are of the same size and / or aligned; the injection compensation blocks 1230 of the two injection compensation regions 123 in the second group are of the same size and / or aligned; the injection compensation blocks 1230 of the two injection compensation regions 123 in the third group are of the same size and / or aligned; the injection compensation blocks 1230 of the injection compensation regions 123 in the groups can be of different sizes and / or staggered.
[0041] Furthermore, the width of the injection compensation block 1230 near the injection compensation region 123 of the well region 110 is greater than or equal to the width of the injection compensation block 1230 away from the injection compensation region 123 of the well region 110, wherein the width of the injection compensation block 1230 refers to the dimension of the injection compensation block 1230 along the circumference of the injection compensation region 123. Figure 1 and Figure 2 As shown, for example, the width of the injection compensation block 1230 in the first injection compensation region 123 is greater than or equal to the width of the injection compensation block 1230 in the second injection compensation region 123, the width of the injection compensation block 1230 in the second injection compensation region 123 is greater than or equal to the width of the injection compensation block 1230 in the third injection compensation region 123, and so on. This can further improve the electric field distribution of the formed silicon carbide power device and enhance its withstand voltage capability.
[0042] Please continue to refer to this. Figures 1 to 3Furthermore, the width of the first gap 1231 between two adjacent injection compensation blocks 1230 of the injection compensation region 123 near the well region 110 is less than or equal to the width of the first gap 1231 between two adjacent injection compensation blocks 1230 of the injection compensation region 123 away from the well region 110, wherein the width of the first gap 1231 between two adjacent injection compensation blocks 1230 refers to the dimension of the first gap 1231 along the circumference of the injection compensation region 123. That is, the first gap 1231 of the first injection compensation region 123 is less than or equal to the first gap 1231 of the second injection compensation region 123, the first gap 1231 of the second injection compensation region 123 is less than or equal to the first gap 1231 of the third injection compensation region 123, and so on. Preferably, the width of the first gap 1231 is between 0.5μm and 1.5μm. For example, the width of the first gap 1231 is 0.5μm, 0.7μm, 0.8μm, 1.1μm or 1.5μm, etc.
[0043] Furthermore, the annular injection region 121 near the well region 110 has a ring width greater than or equal to the annular injection region 121 away from the well region 110, wherein the annular injection region 121 refers to the radial dimension from near the well region 110 to away from the well region 110. The annular width of the injection compensation region 123 near the well region 110 is less than or equal to the annular width of the injection compensation region 120 away from the well region 110, and / or, the annular width of the second gap 122 near the well region 110 is less than or equal to the annular width of the second gap 122 away from the well region 110, wherein the annular width of the injection compensation region 123 refers to the radial dimension from near the well region 110 to away from the well region 110, and the annular width of the second gap 122 refers to the radial dimension from near the well region 110 to away from the well region 110.
[0044] Accordingly, this application also provides a method for manufacturing a silicon carbide power device, the method comprising:
[0045] Step S10: Provide a silicon carbide substrate;
[0046] Step S20: Form a well region in the silicon carbide substrate using a first ion implantation process; and,
[0047] Step S30: A termination structure is formed in the silicon carbide substrate by a second ion implantation process. The termination structure surrounds the well region and includes m spaced annular implantation regions and n spaced implantation compensation regions, where m and n are positive integers and m ≥ n. Furthermore, the n implantation compensation regions and n annular implantation regions are arranged at intervals from the well region. The implantation compensation region includes multiple spaced implantation compensation blocks and is connected to the adjacent annular implantation regions.
[0048] Specifically, a well region 110 can be formed in the silicon carbide substrate 100 using a first P-type ion implantation process. Then, before performing step S30, an N-type source / drain doped region (not shown in the figure) can be formed in the silicon carbide substrate 100 using an N-type ion implantation process.
[0049] In this embodiment, a termination structure 120 is then formed in the silicon carbide substrate 100 using a second P-type ion implantation process. The termination structure 120 surrounds the well region 110 and includes m spaced annular implantation regions 121 and n spaced implantation compensation regions 123, where m and n are positive integers and m ≥ n. The n implantation compensation regions 123 and n annular implantation regions 121 are arranged at intervals starting from the well region 110. Each implantation compensation region 123 includes multiple spaced implantation compensation blocks 1230, and each implantation compensation region 123 is connected to an adjacent annular implantation region 121. The ion implantation concentration of the second P-type ion implantation process is greater than that of the first P-type ion implantation process.
[0050] Furthermore, while forming the terminal structure 120 in the silicon carbide substrate 100 through the second P-type ion implantation process, a P-type source / drain doped region (not shown in the figure) is also formed in the well region 110. That is, the terminal structure 120 can be formed simultaneously with the source / drain structure in the silicon carbide power device. Thus, the terminal structure 120 can be formed without adding additional process steps, which improves the voltage withstand capability of the silicon carbide power device and avoids increasing the process cost.
[0051] The breakdown voltage of the silicon carbide power device 10 provided in this application embodiment can be increased to 1900V~2000V, while the breakdown voltage of the silicon carbide power device without a termination structure under the same conditions is only 1200V~1300V. It can be seen that the withstand voltage capability of the silicon carbide power device 10 provided in this application embodiment has been greatly improved.
[0052] In this application, references to "one embodiment" or "some embodiments" mean that a feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment or at least some embodiments of this application. Therefore, the appearance of the phrases "in one embodiment" or "in some embodiments" throughout this application does not necessarily refer to the same or the same embodiments. Furthermore, in one or more embodiments, features, structures, or characteristics can be combined in any suitable combination and / or sub-combination.
[0053] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and not for limiting the scope of this application. The embodiments of this application can be combined in any way without departing from the spirit and scope of this application. Those skilled in the art should also understand that various modifications can be made to the embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.
Claims
1. A silicon carbide power device, characterized in that, The silicon carbide power device includes: a silicon carbide substrate, a well region formed in the silicon carbide substrate, and a termination structure formed in the silicon carbide substrate and surrounding the well region; wherein the termination structure includes m spaced annular injection regions and n spaced injection compensation regions, where m and n are positive integers and m≥n, and the n injection compensation regions and n annular injection regions are arranged at intervals from the well region, the injection compensation regions include multiple spaced injection compensation blocks and the injection compensation regions are connected to adjacent annular injection regions.
2. The silicon carbide power device as described in claim 1, characterized in that, Adjacent injection compensation regions are arranged alternately, and two injection compensation regions separated by one injection compensation region are aligned.
3. The silicon carbide power device as described in claim 2, characterized in that, The width of the injection compensation block in the injection compensation region near the well region is greater than or equal to the width of the injection compensation block in the injection compensation region away from the well region, wherein the width of the injection compensation block refers to the dimension of the injection compensation block along the circumference of the injection compensation region.
4. The silicon carbide power device as described in claim 2, characterized in that, The width of the first gap between two adjacent injection compensation blocks in the injection compensation area near the well region is less than or equal to the width of the first gap between two adjacent injection compensation blocks in the injection compensation area away from the well region, wherein the width of the first gap between two adjacent injection compensation blocks refers to the dimension of the first gap along the circumference of the injection compensation area.
5. The silicon carbide power device as described in claim 4, characterized in that, The width of the first gap is between 0.5 μm and 1.5 μm.
6. The silicon carbide power device as described in claim 1, characterized in that, The n injection compensation regions are divided into multiple injection compensation region groups. Each injection compensation region group includes three or fewer injection compensation regions. In each injection compensation region group, the size and arrangement of each injection compensation region are the same.
7. The silicon carbide power device according to any one of claims 1 to 6, characterized in that, The ring width of the annular injection region near the well region is greater than or equal to the ring width of the annular injection region away from the well region, wherein the ring width of the annular injection region refers to the radial dimension of the annular injection region from near the well region to away from the well region.
8. The silicon carbide power device according to any one of claims 1 to 6, characterized in that, The ring width of the injection compensation region near the well region is less than or equal to the ring width of the injection compensation region away from the well region, and / or, the ring width of the second gap between two adjacent annular injection regions near the well region is less than or equal to the ring width of the second gap between two adjacent annular injection regions away from the well region; wherein, the ring width of the injection compensation region refers to the radial dimension of the injection compensation region from near the well region to away from the well region, and the ring width of the second gap between two adjacent annular injection regions refers to the radial dimension of the second gap from near the well region to away from the well region.
9. A method for manufacturing a silicon carbide power device, characterized in that, The method for manufacturing the silicon carbide power device includes: Provide silicon carbide substrates; A well region is formed in the silicon carbide substrate by a first ion implantation process; and A termination structure is formed in the silicon carbide substrate by a second ion implantation process. The termination structure surrounds the well region and includes m spaced annular implantation regions and n spaced implantation compensation regions, where m and n are positive integers and m ≥ n. The n implantation compensation regions and n annular implantation regions are arranged at intervals from the well region. The implantation compensation region includes multiple spaced implantation compensation blocks and is connected to the adjacent annular implantation regions.
10. The method for manufacturing a silicon carbide power device as described in claim 9, characterized in that, While forming a terminal structure in the silicon carbide substrate through a second ion implantation process, a source / drain doped region is also formed in the well region.