Novel optoelectronic device capable of being prepared on any substrate, preparation method and application

Abstract

The invention discloses a novel optoelectronic device capable of being prepared on any substrate, a preparation method and application, and belongs to the technical field of optoelectronic devices, the novel optoelectronic device comprises a conductive layer, a porous insulating spacer layer, a porous transparent conductive layer and a charge transport layer which are sequentially deposited on the upper surface of any substrate; the conductive nanocrystalline in the porous transparent conductive layer is uniformly coated by the charge transport layer; and the porous structures in the porous insulating spacer layer and the porous transparent conductive layer are filled with an optical activity semiconductor material. The device can be integrated on different types of substrate materials; meanwhile, each functional layer can be prepared into a porous structure by adopting wet processes such as silk-screen printing and the like, so that preparation of a large-area device is facilitated; and a composite structure of the porous core-shell charge transport layer with bulk phase conduction and surface charge extraction or injection is utilized to replace a common charge transport material, so that efficient charge extraction or injection with a photoactive material interface can be realized, and efficient transport of carriers in a conductive layer bulk phase can be ensured.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic device technology, and more specifically, relates to a novel optoelectronic device that can be fabricated on any substrate, its fabrication method, and its application. Background Technology

[0002] Optoelectronic devices are key and core components of optoelectronic technology, representing a cutting-edge research area in modern optoelectronic and microelectronic technologies, and are an important part of information technology. Optoelectronic devices have a wide range of applications, such as: solar cells that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect; photoelectron emitting devices and photoconductor devices that convert light signals into electrical signals; and light-emitting diodes (LEDs) that release energy through the recombination of electrons and holes. Taking solar cells as an example, their main applications include: residential rooftop distributed photovoltaic systems, large-scale ground-mounted photovoltaic power plants, public utility power supply, building-integrated photovoltaics (BIPV), mobile energy solutions, and energy supply for the Internet of Things (IoT) and aerospace.

[0003] In the process of solar cell industrialization, different application scenarios have different requirements for the substrate of photovoltaic modules. For example, residential rooftop photovoltaic systems and large ground power plants often require highly transparent conductive substrates to reduce light loss; building-integrated photovoltaics require both the substrate and the back electrode to have high light transmittance; while mobile energy solutions often use flexible substrates based on organic materials.

[0004] Furthermore, the requirements for each functional layer and light-absorbing material vary depending on the substrate material used in different application scenarios. For example, organic substrates commonly used in flexible devices require charge transport layers that are processed at low temperatures; building-integrated photovoltaics (BIPV) requires both the substrate and the back electrode to have high light transmittance due to their partial light transmittance characteristics; and photovoltaic devices deposited on opaque materials also have high requirements for the light transmittance of the top electrode. These different application scenarios often require solutions with different device structures.

[0005] Perovskite solar cells have attracted widespread attention from researchers due to their high photoelectric conversion efficiency, solution-based fabrication, tunable bandgap, and wide range of applications. Among them, mesoscopic perovskite solar cells, while possessing high photoelectric conversion efficiency and stability, are limited by low conductivity and transport losses caused by the charge transport layer, hindering further improvements in their efficiency. While doping the charge transport material can significantly increase its conductivity, increasing the doping concentration also introduces excessively high carrier concentrations on the surface, leading to additional recombination. Therefore, a trade-off between conductivity and carrier concentration is necessary, and ultimately, the conductivity of the charge transport material with the appropriate doping concentration is still significantly lower than that of conductive particles.

[0006] Therefore, it is of great significance to design a novel optoelectronic device that can be fabricated on any substrate, and at the same time improve the charge transport efficiency of the device through structural design. Summary of the Invention

[0007] In view of the above-mentioned defects or improvement needs of the existing technology, the present invention provides a novel optoelectronic device, a fabrication method and application that can be fabricated on any substrate, thereby solving the technical problem that it needs to be adapted to different device structures in different application scenarios.

[0008] To achieve the above objectives, according to one aspect of the present invention, a novel optoelectronic device that can be fabricated on any substrate is provided. The device includes a conductive layer, a porous insulating spacer layer, a porous transparent conductive layer, and a charge transport layer sequentially deposited on the upper surface of the substrate. Conductive nanocrystals in the porous transparent conductive layer are uniformly coated by the charge transport layer. The porous structures in the porous insulating spacer layer and the porous transparent conductive layer are filled with photoactive semiconductor materials, or the porous structures in the conductive layer, the porous insulating spacer layer, and the porous transparent conductive layer are filled with photoactive semiconductor materials.

[0009] Preferably, the surface of the conductive layer is uniformly coated with a charge transport layer that transports the opposite type of charge carriers to the charge transport layer coated on the surface of the conductive nanocrystals in the porous transparent conductive layer.

[0010] Preferably, the substrate is a rigid substrate or a flexible substrate. The rigid substrate includes inorganic material substrates (such as glass, quartz, ceramic, asbestos tiles, etc.), metal substrates (such as corrugated steel, aluminum plates, copper-clad laminates, etc.), wood substrates, or composite material substrates. The flexible substrate includes polymer film substrates (such as polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, and polycarbonate, etc.), metal foils (such as copper foil, chromium foil, etc.), woven fabrics, or paper sheets.

[0011] The substrate may be a planar substrate or a non-planar substrate;

[0012] The substrate may be a conductive substrate or a non-conductive substrate;

[0013] The substrate can be a transparent substrate or an opaque substrate.

[0014] Preferably, the conductive layer is a dense conductive layer or a porous conductive layer;

[0015] When the conductive layer is a porous conductive layer, the conductive layer is a porous carbon layer, a porous metal layer, a porous conductive compound layer, or a porous conductive polymer layer.

[0016] When the conductive layer is a dense conductive layer, the conductive layer is a dense conductive carbon layer, a dense conductive oxide layer, a dense conductive metal layer, or a dense conductive polymer layer.

[0017] More preferably, the porous conductive compound layer includes fluorine-doped tin oxide, antimony-doped tin oxide, tin-doped indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, niobium-doped titanium oxide, tantalum-doped titanium oxide, etc.

[0018] More preferably, the porous conductive polymer layer includes polyaniline, polypyrrole, polythiophene and their corresponding derivatives.

[0019] Preferably, the porous insulating spacer layer includes a porous zirconium oxide layer, a porous silicon oxide layer, a porous aluminum oxide layer, a porous magnesium oxide layer, or a porous barium titanate layer;

[0020] The porous transparent conductive layer includes a porous fluorine-doped tin oxide layer, a porous antimony-doped tin oxide layer, a porous tin-doped indium oxide layer, a porous aluminum-doped zinc oxide layer, a porous gallium-doped zinc oxide layer, a porous indium-doped zinc oxide layer, a porous magnesium-doped zinc oxide layer, a porous niobium-doped titanium oxide layer, or a porous tantalum-doped titanium oxide layer.

[0021] Preferably, the charge transport layer is an electron transport layer or a hole transport layer, wherein the electron transport layer is preferably titanium dioxide, tin dioxide, indium oxide, cerium dioxide, zinc oxide, strontium titanate, zinc stannate, barium stannate, tungsten trioxide, cadmium selenide, isomethyl 6,6-phenyl-C61-butyrate (PCBM), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD), 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole](OXD-7), 5-tris(1-phenyl-1 H-benzimidazol-2-yl)benzene (TPBi), 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole (PO-T2T), and one or more self-assembled electron transport layer materials; the hole transport layer is preferably nickel oxide, cuprous oxide, molybdenum oxide, 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), or 2,2′,7,7′-tetrakis-(N,N,-di-p-methylphenylamino)-9,9′-spirodifluorene (Spiro-T) TB), poly(3,4-ethylenedioxythiophene / polystyrene sulfonate) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3-hexylthiophene) (P3HT), p-hexyltrimethylammonium bromide (HTAB), poly(methyl methacrylate):2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinone dimethyl ether (PMMA:F4-TCNQ), poly[N,N'-bis(4-butyryl)-N,N'-bis(phenyl)-benzidine] (polyTPD), N, One or more of the following: N'-diphenyl-N,N'-bis(1-naphthyl-phenyl-1)-1,1'-biphenyl-4,4'-diamine (NPB), tris(4-carbazolyl-9-ylphenyl)amine (TCTA), 4,4'-cyclohexene bis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,4,5,8,9,11-hexaazatribenzohexacarbonitrile (HAT-CN), 4,4',4”-tri{N-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA), and self-assembled hole transport layer materials.

[0022] Preferably, the conductive layer is a porous conductive layer, and the pore size of the porous structure of the conductive layer is 20 nm to 20 μm.

[0023] Preferably, the pore size of the porous structure of the porous insulating layer is 20 nm to 500 nm.

[0024] Preferably, the substrate further includes an insulating dense layer disposed between the substrate and the conductive layer.

[0025] Preferably, the thickness of the charge transport layer is less than 20 nm.

[0026] Preferably, the photoactive semiconductor material is a perovskite semiconductor material or a semiconductor material with a band gap of no more than 5 eV; the perovskite semiconductor material has the general chemical formula ABX3, wherein A is at least one of methylamine, formamidinium, and alkali metal elements, B is at least one of lead and tin, and X is at least one of iodine, bromine, and chlorine.

[0027] According to another aspect of the present invention, a method for fabricating a novel optoelectronic device that can be prepared on any substrate is provided, comprising the following steps:

[0028] Step 1: A porous conductive layer, a porous spacer layer, and a porous transparent conductive layer are sequentially deposited on the substrate using wet deposition processes such as screen printing, slot coating, and spray deposition. After sintering, the optoelectronic device structure is obtained.

[0029] Step 2: A charge transport layer is conformally deposited on the porous transparent conductive layer to form a composite charge transport layer with a core-shell structure, consisting of a transparent conductive material as the core layer and a charge transport material as the shell layer.

[0030] Step 3: Apply the photoactive semiconductor material precursor liquid to the optoelectronic device structure, so that the photoactive semiconductor material precursor liquid fills the porous structure. After drying to remove the solvent in the precursor liquid, a novel optoelectronic device structure is obtained.

[0031] According to another aspect of the present invention, novel optoelectronic devices that can be fabricated on any substrate are provided for use in solar cells, photodetectors, and light-emitting diodes.

[0032] In summary, compared with the prior art, the above-described technical solutions conceived by this invention can achieve the following beneficial effects:

[0033] 1. The novel optoelectronic device proposed in this invention can be fabricated on any substrate. The device structure is completed by sequentially depositing a conductive layer, a porous insulating spacer layer, a porous transparent conductive layer, and a charge transport layer on the surface of any substrate. The substrate can be any type, including rigid / flexible substrates, transparent / opaque substrates, and conductive / non-conductive substrates, offering strong applicability. It can also be applied to various scenarios such as photovoltaic power plants, building-integrated photovoltaics, and wearable devices.

[0034] 2. The novel optoelectronic device proposed in this invention can be fabricated on any substrate. A charge transport layer is deposited and coated on the surface of a porous transparent conductive layer. While ensuring high selectivity of interfacial charge carriers, it greatly promotes the transport of charge carriers, enhances the overall electrical performance of the thin film, and improves the photoelectric conversion efficiency of the device.

[0035] 3. The novel optoelectronic device proposed in this invention can be fabricated on any substrate. Each functional layer can be fabricated using wet processing techniques such as screen printing. The process is simple and highly scalable, which is beneficial for the fabrication of large-area devices. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the structure of the novel optoelectronic device that can be fabricated on any substrate according to the present invention;

[0037] Figure 2 This is a device structure diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0038] Figure 3 This is a device efficiency diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0039] Figure 4 This is a device structure diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0040] Figure 5 This is a device efficiency diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0041] Figure 6 This is a device structure diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0042] Figure 7 This is a device efficiency diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0043] Figure 8 This is a device structure diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate;

[0044] Figure 9 This is a device efficiency diagram of one embodiment of the novel optoelectronic device of the present invention that can be fabricated on any substrate. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0046] like Figure 1As shown, this invention proposes a novel optoelectronic device that can be fabricated on any substrate. The optoelectronic device includes a rigid or flexible substrate 1 and a conductive layer 2, a porous insulating spacer layer 3, and a porous transparent conductive layer 4 sequentially deposited on the substrate 1. The porous structures in the porous insulating spacer layer 3 and the porous transparent conductive layer 4 are all filled with photoactive semiconductor material, or the porous structures in the conductive layer 2, the porous insulating spacer layer 3, and the porous transparent conductive layer 4 are all filled with photoactive semiconductor material; that is, the photoactive semiconductor material can be filled in all porous layers. Furthermore, the conductive nanocrystals in the porous transparent conductive layer 4 are uniformly coated by a charge transport layer 5.

[0047] The technical solution of the present invention will be further illustrated below through specific embodiments.

[0048] Example 1

[0049] like Figure 2 and Figure 3 As shown, this invention proposes a perovskite solar cell with an opaque copper foil as a substrate, an insulating spacer layer of ZrO2, a porous transparent conductive layer of transparent ITO nanocrystalline mesoporous conductive layer, and ITO nanocrystalline particles in the ITO nanocrystalline mesoporous conductive layer being coated by a cuprous iodide hole transport layer.

[0050] The device uses an opaque copper foil as the battery substrate 1. A dense SiO2 insulating layer 2 with a thickness of 200 nm and a dense FTO conductive layer 3 with a thickness of 800 nm are deposited using a spray pyrolysis method. Then, a ZrO2 insulating spacer layer 4 with a thickness of 3 μm and a transparent ITO nanocrystalline mesoporous conductive layer 5 with a thickness of 500 nm are sequentially deposited via screen printing. Finally, a 4 nm thick CuSCN hole transport shell is deposited using a chemical bath to form a core-shell charge transport layer 6. All mesoporous layers are sintered at 400 °C. Figure 2 As shown, 4 μL of lead methylamine iodide (CH3NH3Pbl3) precursor solution (1 mol / L) is added dropwise to the porous back electrode. After standing for 5 minutes to allow it to fully penetrate, the desired device can be obtained by annealing at 50°C for 10 hours.

[0051] In this process, the ZrO2 grains in the insulating spacer layer 4 are 50 nm in size, and the ITO nanoparticles in the mesoporous conductive layer 5 are 30 nm in size. Both are prepared with ethyl cellulose and terpineol in a mass ratio of 1:2:15 to form a slurry with a certain viscosity for screen printing deposition. Tests show that at 100 mW*cm... -2 Under simulated sunlight, the photoelectric conversion efficiency of this device is 16.32%. Figure 3 As shown.

[0052] Example 2

[0053] like Figure 4 and Figure 5 As shown, this invention proposes a perovskite solar cell based on an opaque ceramic plate as a substrate, wherein the nanocrystalline particles in the n-type mesoporous conductive layer are coated with a tin dioxide electron transport layer, and the nanocrystalline particles in the p-type mesoporous conductive layer are coated with a cuprous iodide hole transport layer.

[0054] The device uses an opaque ceramic plate as the battery substrate 1. A dense ITO layer 2 with a thickness of 2 μm is deposited using a slot coating method. Subsequently, a 400 nm thick n-type TiN nanocrystalline mesoporous conductive layer 3 is deposited by screen printing. Then, a 2 nm thick SnO2 electron transport shell layer is deposited by chemical bath deposition to form a core-shell structured charge transport layer 4. A 5 μm thick Al2O3 insulating spacer layer 5 and a 300 nm thick p-type MoO2 layer are deposited by repeated screen printing. X A nanocrystalline mesoporous conductive layer 6 is formed, and a 4 nm thick CuI hole transport shell is deposited using a chemical bath to form a core-shell charge transport layer 7. All mesoporous layers are sintered at 550 °C. 5 μL of a 1 mol / L lead-formamidinium iodide (CH(NH2)2Pbl3) precursor solution is added dropwise to the mesoporous conductive layer 6, and after standing for 5 minutes to allow for full penetration, annealing is performed at 60 °C for 12 hours to obtain the desired device. Figure 4 As shown.

[0055] In this process, the Al2O3 grains in the insulating spacer layer 5 have a size of 80 nm, and the TiN nanoparticles in the mesoporous conductive layer 6 have a size of 50 nm. Both are prepared into a slurry with a certain viscosity by mixing ethyl cellulose and terpineol in a mass ratio of 1:3:20, and then screen-printed to deposit the film. Tests show that at 100 mW*cm... -2 Under simulated sunlight, the photoelectric conversion efficiency of this device is 15.60%. Figure 5 As shown.

[0056] Example 3

[0057] like Figure 6 and Figure 7 As shown, this invention proposes a perovskite solar cell based on a transparent PET flexible conductive film as a substrate, an insulating spacer layer of SiO2, and nanocrystalline particles in a mesoporous conductive layer coated with a barium stannate electron transport layer, wherein the counter electrode is a nano-Ag conductive film.

[0058] The device uses a transparent PET flexible conductive film as the battery substrate 1. The substrate has a 300nm thick ITO dense conductive layer 2. A 3µm thick SiO2 insulating spacer layer 3 and a 600nm thick TiCN nanocrystalline mesoporous conductive layer 4 are sequentially deposited by screen printing. Subsequently, a 5nm thick BaSnO3 electron transport shell layer is deposited by chemical bath deposition to form a core-shell structured charge transport layer 5. All mesoporous layers are sintered at 480℃. 3μL of 1.5mol / L methylamine iodide (CH3NH3Pbl3) precursor solution is added dropwise to the mesoporous conductive layer 4, and after standing for 10 minutes to allow for full penetration, it is annealed at 55℃ for 15 hours, for example. Finally, a nano-Ag conductive counter electrode 6 is deposited by screen printing to obtain the desired device. Figure 6 As shown.

[0059] In this process, the SiO2 grains in the insulating spacer layer 3 have a size of 65 nm, and the BaSnO3 nanoparticles in the mesoporous conductive layer 4 have a size of 30 nm. Both are prepared into a slurry with a certain viscosity by mixing ethyl cellulose and terpineol in a mass ratio of 1:1:10, and then screen-printed to deposit the film. Tests show that at 100 mW*cm... -2 Under simulated sunlight, the photoelectric conversion efficiency of this device is 14.62%. Figure 7 As shown.

[0060] Example 4

[0061] like Figure 8 and Figure 9 As shown, this invention proposes a perovskite solar cell based on an opaque TPU waterproof film as a substrate, an AlN insulating spacer layer, and nanocrystalline particles in a mesoporous conductive layer coated with a nickel oxide hole transport layer.

[0062] The device uses an opaque TPU (diphenylmethane diisocyanate (MDI), toluene diisocyanate (TDI), and a polymer synthesized by chemical reaction of macromolecular polyols and chain extenders) waterproof film as the battery substrate 1. A 200 nm thick ITO dense conductive layer 2 is prepared by chemical vapor deposition. A 2 μm thick ZrO2 insulating spacer layer 3 and a 300 nm thick LaB6 nanocrystalline mesoporous conductive layer 4 are sequentially deposited by screen printing. Subsequently, a 3 nm thick NiO hole transport shell layer is deposited by conformal chemical bath deposition to form a core-shell structured charge transport layer 5. All mesoporous layers are sintered at 550 °C. 3 μL of lead-formamidinium iodide (CH(NH2)2Pbl3) precursor solution (1.2 mol / L) is added dropwise to the mesoporous conductive layer 4, and after standing for 6 minutes to allow for full penetration, it is annealed at 80 °C for 6 hours to obtain the desired device. Figure 8 As shown.

[0063] In this process, the AlN grains in the insulating spacer layer 3 have a size of 40 nm, and the LaB6 nanoparticles in the mesoporous conductive layer 4 have a size of 50 nm. Both are prepared with ethyl cellulose and terpineol in a mass ratio of 1:2:14 to form a slurry with a certain viscosity, which is then used for screen printing deposition. Tests show that at 100 mW*cm... -2 Under simulated sunlight, the photoelectric conversion efficiency of this device is 15.59%. Figure 9 As shown.

[0064] In the above embodiments, the substrate material can be selected from metal substrates, ceramic substrates, organic substrates, and various composite material substrates, etc., and can be divided into transparent substrates and opaque substrates according to their light transmittance. The shape, size, and surface properties (such as roughness, curvature, presence or absence of a conductive layer, etc.) of the substrate can be adjusted according to actual needs.

[0065] To further clarify, the conductive layer can be one or more of the following: transparent conductive metal oxide, carbon-based materials, conductive polymers, and metal material electrodes (metal nanowires, metal films, and metal meshes). Conductive metal oxides include fluorine-doped tin oxide, antimony-doped tin oxide, tin-doped indium oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, and indium-doped zinc oxide; carbon-based materials include one-dimensional carbon nanotubes, two-dimensional graphene materials, graphene and its derivatives (such as graphene oxide and reduced graphene oxide), and carbon nanofibers; conductive polymers include polyaniline (PANI), polypyrrole (PPY), polythiophene (PTH), poly(3,4-ethylenedioxythiophene) (PEDOT), and poly(3-hexylthiophene) (P3HT) and their derivatives; metal nanowires include precious metal nanowires such as gold and silver; metal films include thin films of gold, silver, copper, aluminum, chromium, nickel, and other metals; and metal meshes include gold meshes, silver meshes, and copper meshes. It can be prepared into mesoporous or dense structures according to actual needs, and the thickness can be adjusted in the range of 30nm-10um.

[0066] To further clarify, the insulating spacer layer is one or more of ZrO2, SiO2, Al2O3, BN, AlN, Si3N4, MgO, BeO, and SiC. The particle size can be adjusted within the range of 20-500nm according to actual needs, and the thickness can be adjusted within the range of 100nm-10μm.

[0067] To further explain, the mesoporous conductive layer and the hole / electron transport layer are a core-shell structured composite charge transport layer. This layer uses a conductive material as the core layer, including one or more of Ti, Sn, Zn, Au, Ag, Cu, Fe, ITO, ATO, FTO, AZO, TiH, TiN, TiC, TiCN, TiB, TiAlN, ZrN, and LaB6; and an electron / hole transport material as the shell layer. The electron transport layer material is one or more of organic polymers and their derivatives, such as TiO2, SnO2, CeO2, SrTiO3, ZnSnO3, BaSnO3, WO3, CdTe, and isomethyl 6,6-phenyl-C61-butyrate (PCBM), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD). The hole transport layer material is Cu2O, CuI, CuSCN, NiO, or MoO. x And one or more of the following organic polymers and their derivatives: 2,2",7,7"-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), poly(3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3-hexylthiophene) (P3HT), p-hexyltrimethylammonium bromide (HTAB). The size of the conductive nanocrystals in the mesoporous conductive layer can be adjusted within the range of 10-500 nm according to actual needs, and the thickness can be adjusted within the range of 100 nm-500 μm.

[0068] To further explain, the photoactive semiconductor material in this invention can be any type of light-absorbing semiconductor material. In addition to perovskite photoactive semiconductor materials with the general chemical formula ABX3 (corresponding to perovskite solar cells), it can also be organic materials (corresponding to organic solar cells), photosensitive dye molecules (corresponding to dye-sensitized solar cells), quantum dot materials (corresponding to quantum dot solar cells), and narrow bandgap materials (corresponding to thin-film solar cells), etc.

[0069] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A novel optoelectronic device that can be fabricated on any substrate, characterized in that: The device includes a conductive layer, a porous insulating spacer layer, a porous transparent conductive layer and a charge transport layer sequentially deposited on the upper surface of a substrate; In the porous transparent conductive layer, conductive nanocrystals are uniformly coated by a charge transport layer. The porous structures in the porous insulating spacer layer and the porous transparent conductive layer are all filled with photoactive semiconductor materials, or the porous structures in the conductive layer, the porous insulating spacer layer and the porous transparent conductive layer are all filled with photoactive semiconductor materials.

2. The novel optoelectronic device that can be fabricated on any substrate according to claim 1, characterized in that, The surface of the conductive layer is uniformly coated with a charge transport layer that transports the opposite type of charge carriers to the surface of the conductive nanocrystals in the porous transparent conductive layer.

3. A novel optoelectronic device that can be fabricated on any substrate according to claim 1, characterized in that, The substrate can be a rigid substrate or a flexible substrate. The rigid substrate includes inorganic material substrates, metal substrates, wood substrates, or composite material substrates. The flexible substrate includes polymer film substrates, metal foils, woven fabrics, or paper sheets. The substrate may be a planar substrate or a non-planar substrate; The substrate may be a conductive substrate or a non-conductive substrate; The substrate can be a transparent substrate or an opaque substrate.

4. A novel optoelectronic device that can be fabricated on any substrate according to claim 1, characterized in that, The conductive layer is a dense conductive layer or a porous conductive layer; When the conductive layer is a porous conductive layer, the conductive layer is a porous carbon layer, a porous metal layer, a porous conductive compound layer, or a porous conductive polymer layer. When the conductive layer is a dense conductive layer, the conductive layer is a dense conductive carbon layer, a dense conductive oxide layer, a dense conductive metal layer, or a dense conductive polymer layer.

5. A novel optoelectronic device that can be fabricated on any substrate according to claim 1, characterized in that, The porous insulating spacer layer includes a porous zirconium oxide layer, a porous silicon oxide layer, a porous aluminum oxide layer, a porous magnesium oxide layer, or a porous barium titanate layer; The porous transparent conductive layer includes a porous fluorine-doped tin oxide layer, a porous antimony-doped tin oxide layer, a porous tin-doped indium oxide layer, a porous aluminum-doped zinc oxide layer, a porous gallium-doped zinc oxide layer, a porous indium-doped zinc oxide layer, a porous magnesium-doped zinc oxide layer, a porous niobium-doped titanium oxide layer, or a porous tantalum-doped titanium oxide layer.

6. A novel optoelectronic device that can be fabricated on any substrate according to claim 1, characterized in that, The charge transport layer is either an electron transport layer or a hole transport layer. The materials of the electron transport layer include titanium dioxide, tin dioxide, indium oxide, cerium dioxide, zinc oxide, strontium titanate, zinc stannate, barium stannate, tungsten trioxide, cadmium selenide, isomethyl 6,6-phenyl-C61-butyrate, 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole, and 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-... [Oxadiazole], 5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene or 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole, self-assembled electron transport layer material; the hole transport layer material is nickel oxide, cuprous oxide, molybdenum oxide, 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 2,2′,7,7′-tetra-(N,N,-di-p-methylphenyl) Amino)-9,9′-spirodifluorene, poly(3,4-ethylenedioxythiophene / polystyrene sulfonate), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), p-hexyltrimethylammonium bromide, poly(methyl methacrylate):2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinone dimethyl ether (PMMA:F4-TCNQ), poly[N,N'-bis(4-butyrphenyl)-N,N'-bis(phenyl)- [Benzidine], N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl-1)-1,1'-biphenyl-4,4'-diamine, tris(4-carbazolyl-9-ylphenyl)amine, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,4,5,8,9,11-hexaazatribenzohexacarbonitrile or 4,4',4”-tri{N-(3-methylphenyl)-N-phenylamino}triphenylamine, self-assembled hole transport layer materials.

7. A novel optoelectronic device that can be fabricated on any substrate according to claim 1, characterized in that, It also includes an insulating dense layer disposed between the substrate and the conductive layer.

8. A method for fabricating a novel optoelectronic device that can be fabricated on any substrate as described in any one of claims 1-7, characterized in that, Includes the following steps: Step 1: A conductive layer, a porous insulating spacer layer, and a porous transparent conductive layer are sequentially deposited on a substrate, and the optoelectronic device structure is obtained after sintering. Step 2: A charge transport layer is conformally deposited on the porous transparent conductive layer to form a composite charge transport layer with a core-shell structure, consisting of a transparent conductive material as the core layer and a charge transport material as the shell layer. Step 3: Apply the photoactive semiconductor material precursor solution to the optoelectronic device structure obtained in Step 2, so that the photoactive semiconductor material precursor solution fills the porous structure. After drying to remove the solvent in the precursor solution, a novel optoelectronic device structure is obtained.

9. The application of the novel optoelectronic device that can be fabricated on any substrate according to any one of claims 1-7 in solar cells, photodetectors, and light-emitting diodes.

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