Pixel unit, manufacturing method thereof and display panel

Abstract

The invention belongs to the technical field of semiconductors, and discloses a pixel unit, a manufacturing method thereof and a display panel, and the manufacturing method comprises the steps: S1, manufacturing an anode layer on one side of a substrate; s2, an initial transparent inorganic layer is manufactured on the side, away from the substrate, of the anode layer, the initial transparent inorganic layer comprises at least four sets of transparent inorganic sub-layers, each set of transparent inorganic sub-layers comprises an upper inorganic sub-layer and a lower inorganic sub-layer, and the upper inorganic sub-layers and the lower inorganic sub-layers are made of different first materials and second materials respectively; patterning the initial transparent inorganic layer to form a corresponding anode through hole; s4, patterning the first middle transparent inorganic layer to obtain corresponding initial openings in sequence, and increasing the distances from the initial openings to the anode layer in sequence; and S5, etching each opening to form a partition structure and obtain a transparent inorganic layer. According to the invention, the thickness of the strong micro-cavity structure can be accurately controlled, the preparation efficiency can be considered, and the problem of transverse crosstalk between adjacent strong micro-cavity structures can be avoided.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, specifically relating to pixel units and their manufacturing methods, and display panels. Background Technology

[0002] In the semiconductor field, the existing silicon-based OLED industry often uses anode fabrication methods that employ multiple rounds of photolithography processes and parameter control to achieve thickness control of the microcavity structure. However, in practical applications, the thickness of the microcavity structure cannot be well controlled, leading to wavelength and color point shifts in the device. Therefore, existing technologies need further improvement to accurately control the thickness of the strong microcavity structure, thereby solving the problem of difficulty in controlling the thickness of the strong microcavity structure and improving the display effect of the device. Summary of the Invention

[0003] The purpose of this invention is to provide a method for manufacturing a pixel unit to solve the technical problem that the thickness of a strong microcavity structure is difficult to control precisely in the prior art, which affects the display effect.

[0004] A method for manufacturing a pixel unit includes the following steps: S1. An anode layer is fabricated on one side of a substrate, such that the anode layer includes a first anode located in a first color pixel region, a second anode located in a second color region, and a third anode located in a third color pixel region; S2. An initial transparent inorganic layer is formed on the side of the anode layer away from the substrate, such that the initial transparent inorganic layer includes at least four sets of transparent inorganic sub-layers. The at least four sets of transparent inorganic sub-layers include a first transparent inorganic sub-layer, a second transparent inorganic sub-layer, a third transparent inorganic sub-layer, and a fourth transparent inorganic sub-layer, which are sequentially arranged and have increasing thicknesses. The first transparent inorganic sub-layer, the second transparent inorganic sub-layer, the third transparent inorganic sub-layer, and the fourth transparent inorganic sub-layer each include a first sub-inorganic layer and a second sub-inorganic layer, a third sub-inorganic layer and a fourth sub-inorganic layer, a fifth sub-inorganic layer and a sixth sub-inorganic layer, and a seventh sub-inorganic layer and an eighth sub-inorganic layer, respectively, which are stacked together. The first sub-inorganic layer, the third sub-inorganic layer, the fifth sub-inorganic layer, and the seventh sub-inorganic layer are all made of a first material, and the second sub-inorganic layer, the fourth sub-inorganic layer, the sixth sub-inorganic layer, and the eighth sub-inorganic layer are all made of a second material. The first material and the second material are different. S3. Pattern the initial transparent inorganic layer to form a first anode through-hole, a second anode through-hole, and a third anode through-hole that extend to the first anode, the second anode, and the third anode, respectively, to obtain a first intermediate transparent inorganic layer; S4. Pattern the first intermediate transparent inorganic layer to sequentially obtain an initial first opening that communicates with the first anode through hole and exposes the surface of the second sub-inorganic layer, an initial second opening that communicates with the second anode through hole and exposes the surface of the fourth sub-inorganic layer, and an initial third opening that communicates with the third anode through hole and exposes the surface of the sixth sub-inorganic layer, thereby obtaining the second intermediate transparent inorganic layer. S5: Etch the initial first opening, initial second opening and initial third opening, such that the sidewall etching rate of the fourth sub-inorganic layer, sixth sub-inorganic layer and eighth sub-inorganic layer is greater than the sidewall etching rate of the third sub-inorganic layer, fifth sub-inorganic layer and seventh sub-inorganic layer, to form the first opening, second opening and third opening with a partition structure, and obtain a transparent inorganic layer.

[0005] Preferably, after step S4 and before step S5, the manufacturing method further includes: forming an anode bonding layer conformally on the surface of the second intermediate transparent inorganic layer; Remove part of the anode connection layer, and retain the first anode connection post located in the first anode through hole, the second anode connection post located in the second anode through hole, and the third anode connection post located in the third anode through hole.

[0006] Preferably, after step S5, the manufacturing method further includes: S6. A light-emitting layer and a cathode layer are sequentially fabricated on the side of the transparent inorganic layer away from the substrate.

[0007] The present invention also discloses a pixel unit, comprising a first color pixel region, a second color pixel region, and a third color pixel region; the pixel unit comprises: The anode layer includes a first anode located in a first color pixel region, a second anode located in a second color region, and a third anode located in a third color pixel region; A transparent inorganic layer is disposed on the side of the anode layer away from the substrate. The transparent inorganic layer includes a first opening corresponding to the first anode, a second opening corresponding to the second anode, and a third opening corresponding to the third anode. The transparent inorganic layer includes at least four sets of transparent inorganic sublayers, each set comprising a first transparent inorganic sublayer, a second transparent inorganic sublayer, a third transparent inorganic sublayer, and a fourth transparent inorganic sublayer arranged sequentially with increasing thickness. The first, second, third, and fourth transparent inorganic sublayers are each stacked. A first sub-inorganic layer, a second sub-inorganic layer, a third sub-inorganic layer, a fourth sub-inorganic layer, a fifth sub-inorganic layer, a sixth sub-inorganic layer, a seventh sub-inorganic layer, and an eighth sub-inorganic layer are disposed. The first sub-inorganic layer, the third sub-inorganic layer, the fifth sub-inorganic layer, and the seventh sub-inorganic layer are all made of a first material, while the second sub-inorganic layer, the fourth sub-inorganic layer, the sixth sub-inorganic layer, and the eighth sub-inorganic layer are all made of a second material. The first material and the second material are different. The first opening exposes the second sub-inorganic layer, the second opening exposes the fourth sub-inorganic layer, and the sixth opening exposes the sixth sub-inorganic layer. The sidewall openings of the fourth, sixth, and eighth sub-inorganic layers exposed in the first, second, and third openings are all larger than the sidewall openings of the third, fifth, and seventh sub-inorganic layers.

[0008] Preferably, the pixel unit further includes: The anode connection layer includes a first anode connection post extending from the bottom of the first opening to the first anode, a second anode connection post extending from the bottom of the second opening to the second anode, and a third anode connection post extending from the bottom of the third opening to the third anode; The light-emitting layer includes a first light-emitting structure located on one side of the bottom of the first opening, a second light-emitting structure located on one side of the bottom of the second opening, and a third light-emitting structure located on one side of the bottom of the third opening; The cathode layer has a first cathode structure covering the top of the first light-emitting structure, a second cathode structure covering the top of the second light-emitting structure, and a third cathode structure covering the top of the third light-emitting structure.

[0009] Preferably, the distance between the first cathode structure and the first anode is the microcavity length required for the first color pixel area, the distance between the second cathode structure and the second anode is the microcavity length required for the second color pixel area, and the distance between the third cathode structure and the third anode is the microcavity length required for the third color pixel area.

[0010] Preferably, the transparent inorganic layer further includes a top sub-inorganic layer located on the side of the fourth inorganic layer away from the driving substrate. The material of the top sub-inorganic layer is a first material, and the sidewall openings of the top sub-inorganic layer exposed in the first opening, the second opening, and the third opening are smaller than the sidewall openings of the eighth sub-inorganic layer.

[0011] Preferably, in the same transparent inorganic sublayer, the thickness of the two sub-inorganic layers is equal.

[0012] Preferably, the pixel unit further includes an isolation structure located between two adjacent anodes among the first anode, second anode, and third anode, wherein the material of the isolation structure is the first material.

[0013] The present invention also provides a display panel comprising pixel units arranged in an array as described above.

[0014] The technical advantages of this invention are as follows: Through adapted structural and process improvements, this invention transforms the transparent inorganic layer into a multi-layered transparent inorganic layer formed by alternating layers of two different materials. Furthermore, based on the different etching selectivity of the sub-inorganic layers of different materials during the process, it is easier to more precisely control the bottom position of the etched openings, thereby accurately controlling the positions of the light-emitting structures and their corresponding cathode structures in different color pixel areas. Therefore, this solution can accurately control the thickness of the strong microcavity structure. Simultaneously, based on the different materials and through process control, this solution can simultaneously form corresponding undercut structures in three color pixel areas, achieving high efficiency and reliable fabrication results. The multi-layered undercut structure forming the partition structure for each opening also reduces lateral crosstalk between strong microcavity structures in adjacent color pixel areas, while ensuring both fabrication efficiency and display reliability. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of step S1 in Embodiment 1 of the present invention, which forms a separate anode; Figure 2 This is a schematic diagram of step S2 in Embodiment 1 of the present invention, which forms the initial transparent inorganic layer; Figure 3 This is a schematic diagram of step S3 of Embodiment 1 of the present invention after coating and removing part of the photoresist; Figure 4 This is a schematic diagram of step S3 of embodiment 1 of the present invention, which involves forming various anode through holes. Figure 5 This is a schematic diagram showing the removal of a portion of the photoresist corresponding to the first opening position after step S4 of embodiment 1 of the present invention, where photoresist is applied. Figure 6 This is a schematic diagram of step S4 of embodiment 1 of the present invention, which forms the initial first opening; Figure 7This is a schematic diagram showing the removal of a portion of the photoresist corresponding to the second opening position after step S4 of embodiment 1 of the present invention, where photoresist is applied. Figure 8 This is a schematic diagram of step S4 of embodiment 1 of the present invention, which forms the initial second opening; Figure 9 This is a schematic diagram of the photoresist removal at the third opening position after applying photoresist in step S4 of Embodiment 1 of the present invention. Figure 10 This is a schematic diagram of step S4 of embodiment 1 of the present invention, which forms the initial third opening; Figure 11 This is a schematic diagram of step S4 of embodiment 2 of the present invention, which forms the initial anode bonding layer; Figure 12 This is a schematic diagram of step S4 of Embodiment 2 of the present invention, after applying photoresist and removing the photoresist except for the bottom of each opening; Figure 13 This is a schematic diagram of step S4 of Embodiment 2 of the present invention, after removing part of the initial anode bonding layer material and peeling off the photoresist; Figure 14 This is a schematic diagram of step S5 of embodiment 2 of the present invention, which forms a first opening, a second opening, and a third opening with a partition structure. Figure 15 This is a schematic diagram of step S6 of embodiment 2 of the present invention, which involves manufacturing the light-emitting layer and the cathode layer. Figure 16 This is a schematic diagram of the pixel unit structure in Embodiment 2 of the present invention; Figure 17 This is a schematic diagram of the strong microcavity anode structure of the pixel unit in Embodiment 2 of the present invention.

[0016] The labels in the attached diagram include: P1 First color pixel area, P2 Second color pixel area, P3 Third color pixel area, 1 Anode layer, 101 First anode, 102 Second anode, 103 Third anode, 2 Isolation structure, 3 Transparent inorganic layer, 31 First transparent inorganic sublayer, 32 Second transparent inorganic sublayer, 33 Third transparent inorganic sublayer, 34 Fourth transparent inorganic sublayer, 301 First sub-inorganic layer, 302 Second sub-inorganic layer, 303 Third sub-inorganic layer, 304 Fourth sub-inorganic layer, 305 Fifth sub-inorganic layer, 306 Sixth sub-inorganic layer, 307 Seventh sub-inorganic layer, 308 Eighth sub-inorganic layer, 309 Top sub-inorganic layer, 4 Anode connecting layer, 401 First anode connecting pillar, 402 Second anode connecting pillar, 403 Third anode connecting pillar, 5 Light-emitting layer, 501 First light-emitting structure, 502 Second light-emitting structure, 503 Third light-emitting structure, 6 Cathode layer, 601 First cathode structure, 602 Second cathode structure, 603 Third cathode structure, 7 Partition structure. Detailed Implementation

[0017] The following detailed description of the embodiments, with reference to the accompanying drawings, will further illustrate the specific implementation of the present invention, in order to help those skilled in the art to have a more complete, accurate, and in-depth understanding of the inventive concept and technical solution of the present invention.

[0018] In the silicon-based OLED industry, traditional anode fabrication methods cannot effectively control the thickness of the microcavity structure. Thickness errors can lead to wavelength and color point shifts, affecting the display performance. This invention addresses this issue by employing a multi-layered transparent inorganic layer technique to fabricate a strong microcavity structure, thereby achieving precise control over its thickness and improving the display effect.

[0019] The technical solution of the present invention provides the following embodiments.

[0020] Example 1: like Figure 1 As shown, this invention discloses a method for manufacturing a pixel unit, comprising the following steps: S1. An anode layer 1 is fabricated on one side of a substrate, such that the anode layer 1 includes a first anode 101 located in a first color pixel region P1, a second anode 102 located in a second color region, and a third anode 103 located in a third color pixel region P3.

[0021] In this embodiment, an initial reflective metal layer is deposited on one side of the CMOS substrate using PVD (Physical Vapor Deposition). The material used for the reflective metal layer can be a metal such as Al or Ag. Then, this step involves a series of photolithography processes, including resist coating, exposure, development, and etching, to pattern the substrate and form individual anodes corresponding to the color pixel areas. The individual anodes include a first anode 101 located in the first color pixel area P1, a second anode 102 located in the second color area, and a third anode 103 located in the third color pixel area P3.

[0022] S2. An initial transparent inorganic layer is formed on the side of the anode layer 1 away from the substrate, such that the initial transparent inorganic layer includes at least four sets of transparent inorganic sublayers. The at least four sets of transparent inorganic sublayers include a first transparent inorganic sublayer 31, a second transparent inorganic sublayer 32, a third transparent inorganic sublayer 33, and a fourth transparent inorganic sublayer 34, which are sequentially arranged and have increasing thicknesses. The first transparent inorganic sublayer 31, the second transparent inorganic sublayer 32, the third transparent inorganic sublayer 33, and the fourth transparent inorganic sublayer 34 respectively include a first sub-inorganic layer 301 and a second sub-inorganic layer 302 stacked on top of each other. Sub-inorganic layer 302, third sub-inorganic layer 303, fourth sub-inorganic layer 304, fifth sub-inorganic layer 305, sixth sub-inorganic layer 306, seventh sub-inorganic layer 307, and eighth sub-inorganic layer 308. The materials of the first sub-inorganic layer 301, third sub-inorganic layer 303, fifth sub-inorganic layer 305, and seventh sub-inorganic layer 307 are all first materials, and the materials of the second sub-inorganic layer 302, fourth sub-inorganic layer 304, sixth sub-inorganic layer 306, and eighth sub-inorganic layer 308 are all second materials. The first material and the second material are different.

[0023] Each sub-inorganic layer is deposited using CVD (chemical vapor deposition). The first material used is SiO, and the second material is SiN. The entire initial transparent inorganic layer is formed by alternating layers of SiO and SiN sub-inorganic materials. Each SiO sub-inorganic layer and the SiN sub-inorganic layer above it constitutes a transparent inorganic sub-layer, with at least four layers formed. Four, five, or six layers are optional; this embodiment uses four layers as an example. The actual application will determine the number of layers as needed. This scheme does not limit the specific number of layers.

[0024] In this embodiment, the first step involves depositing and filling adjacent anodes 101, 102, and 103 using a CVD method to form an isolation structure 2, separating the anodes. The isolation structure 2 is made of the first material, SiO. The thickness of the isolation structure 2 is the same as that of each anode, 100 nm.

[0025] Subsequently, CVD deposition was performed sequentially on one side of the anode and the isolation structure 2 to fabricate the first sub-inorganic layer 301, the second sub-inorganic layer 302, the third sub-inorganic layer 303, the fourth sub-inorganic layer 304, the fifth sub-inorganic layer 305, the sixth sub-inorganic layer 306, the seventh sub-inorganic layer 307, and the eighth sub-inorganic layer 308.

[0026] From the anode upwards, the thicknesses of the various sub-inorganic layers are as follows: the first sub-inorganic layer 301 is made of SiO material with a thickness of 7 nm; the second sub-inorganic layer 302 is made of SiN material with a thickness of 7 nm; the third sub-inorganic layer 303 is made of SiO material with a thickness of 27.5 nm; the fourth sub-inorganic layer 304 is made of SiN material with a thickness of 27.5 nm; the fifth sub-inorganic layer 305 is made of SiO material with a thickness of 28 nm; the sixth sub-inorganic layer 306 is made of SiN material with a thickness of 28 nm; the seventh sub-inorganic layer 307 is made of SiO material with a thickness of 40 nm; and the eighth sub-inorganic layer 308 is made of SiN material with a thickness of 40 nm. The thickness settings of these inorganic layers can match the thickness of the strong microcavity structure corresponding to the three different color pixel regions of RGB, thereby achieving control over the thickness of the strong microcavity structure.

[0027] Finally, the top inorganic layer 309 is fabricated on the side of the eighth inorganic layer 308 away from the substrate using CVD. The material of the top inorganic layer 309 is the first material, namely SiO material, with a thickness of 40nm. This completes the preparation of the initial transparent inorganic layer.

[0028] S3. Pattern the initial transparent inorganic layer to form a first anode through-hole, a second anode through-hole, and a third anode through-hole that extend to the first anode 101, the second anode 102, and the third anode 103 respectively, to obtain a first intermediate transparent inorganic layer.

[0029] The patterning process in this step includes: firstly, coating a photoresist (PR resist) on an initial transparent inorganic layer, and then performing exposure and development to remove part of the photoresist. Then, etching is used to remove the material of the initial transparent inorganic layer corresponding to the photoresist removal area, forming a first anode via, a second anode via, and a third anode via that extend to the first anode 101, the second anode 102, and the third anode 103, respectively. After that, the photoresist is stripped off.

[0030] S4. Pattern the first intermediate transparent inorganic layer to sequentially obtain an initial first opening that communicates with the first anode through hole and exposes the surface of the second sub-inorganic layer 302, an initial second opening that communicates with the second anode through hole and exposes the surface of the fourth sub-inorganic layer 304, and an initial third opening that communicates with the third anode through hole and exposes the surface of the sixth sub-inorganic layer 306, thereby obtaining the second intermediate transparent inorganic layer.

[0031] In this embodiment, the patterning process of this step specifically includes: First, photoresist is coated on the first intermediate transparent inorganic layer, and exposure and development are performed to remove a portion of the photoresist corresponding to the first opening position. Then, etching is used to remove the second transparent inorganic sublayer 32, the third transparent inorganic sublayer 33, the fourth transparent inorganic sublayer 34, and the top sub-inorganic layer 309 corresponding to the photoresist removal portion, forming an initial first opening communicating with the bottom first anode via. Finally, the photoresist is stripped away. The first transparent inorganic sublayer 31 lies between the bottom of the initial first opening and the first anode 101.

[0032] Next, photoresist is coated on the first intermediate transparent inorganic layer, and exposure and development are performed to remove a portion of the photoresist corresponding to the second opening position. Etching is then used to remove the third transparent inorganic sublayer 33, the fourth transparent inorganic sublayer 34, and the top sublayer inorganic layer 309 corresponding to the photoresist removal area, forming an initial second opening communicating with the bottom second anode via. Finally, the photoresist is stripped away. The first transparent inorganic sublayer 31 and the second transparent inorganic sublayer 32 lie between the bottom of the initial second opening and the second anode 102.

[0033] Finally, photoresist is coated on the first intermediate transparent inorganic layer, and exposure and development are performed to remove part of the photoresist corresponding to the third opening position. The fourth transparent inorganic sublayer 34 and the top sub-inorganic layer 309 corresponding to the photoresist removal part are removed by etching to form an initial third opening that communicates with the bottom third anode via. The bottom of the initial third opening and the third anode 103 are the first transparent inorganic sublayer 31, the second transparent inorganic sublayer 32 and the third transparent inorganic sublayer 33.

[0034] After forming the initial first opening, the initial second opening, and the initial third opening, this step also involves conformally preparing an anode bonding layer 4 on the surface of the second intermediate transparent inorganic layer. The anode bonding layer 4 is made of a transparent material such as ITO.

[0035] Specifically, an initial anode bonding layer 4 is first prepared by whole-surface deposition, which covers the second intermediate transparent inorganic layer and each anode via (first anode via, second anode via and third anode via).

[0036] Next, photoresist is coated on the surface of the initial anode connection layer 4, and exposure and development are performed to remove the photoresist except for the bottom of each opening (initial first opening, initial second opening and initial third opening), including only the photoresist in the bottom area of ​​the initial first opening, initial second opening and initial third opening. Then, the material of the initial anode connection layer 4 corresponding to the photoresist removal area is removed by etching. Then, the photoresist is stripped off. Finally, a portion of the initial anode connection layer 4 in the bottom area of ​​the initial first opening, initial second opening and initial third opening is also removed by etching.

[0037] This way, only the first anode connecting post 401 located in the first anode through hole, the second anode connecting post 402 located in the second anode through hole, and the third anode connecting post 403 located in the third anode through hole are retained.

[0038] S5: Etch the initial first opening, initial second opening and initial third opening, such that the sidewall etching rate of the fourth sub-inorganic layer 304, the sixth sub-inorganic layer 306 and the eighth sub-inorganic layer 308 is greater than the sidewall etching rate of the third sub-inorganic layer 303, the fifth sub-inorganic layer 305 and the seventh sub-inorganic layer 307, to form the first opening, the second opening and the third opening with the partition structure 7, and obtain the transparent inorganic layer 3.

[0039] In this embodiment, this step adjusts the etching rates of SiN and SiO materials so that the sidewall etching rates of the fourth sub-inorganic layer 304, the sixth sub-inorganic layer 306, and the eighth sub-inorganic layer 308 are greater than the sidewall etching rates of the third sub-inorganic layer 303, the fifth sub-inorganic layer 305, and the seventh sub-inorganic layer 307. This results in the sidewall openings of the SiN sub-inorganic layers being larger than those of the SiO sub-inorganic layers, forming an undercut structure. Correspondingly, a first opening, a second opening, and a third opening with a partition structure 7 are also formed. The partition structure 7 refers to the arrangement of a shorter SiN sub-inorganic layer sandwiched between two longer SiO sub-inorganic layers for adjacent openings.

[0040] S6. A light-emitting layer 5 and a cathode layer 6 are sequentially formed on the side of the transparent inorganic layer 3 away from the substrate.

[0041] The light-emitting layer 5 is prepared by direct vapor deposition and includes a first light-emitting structure 501 located on one side of the bottom of the first opening, a second light-emitting structure 502 located on one side of the bottom of the second opening, and a third light-emitting structure 503 located on one side of the bottom of the third opening.

[0042] The cathode layer 6 is formed by conformal manufacturing and has a first cathode structure 601 with its bottom located at the first light-emitting structure 501, a second cathode structure 602 with its bottom located at the second light-emitting structure 502, and a third cathode structure 603 with its bottom located at the third light-emitting structure 503.

[0043] Example 2 The present invention also discloses a pixel unit, comprising a first color pixel area P1, a second color pixel area P2, and a third color pixel area P3; the pixel unit includes: The anode layer 1 includes a first anode 101 located in the first color pixel area P1, a second anode 102 located in the second color area, and a third anode 103 located in the third color pixel area P3.

[0044] A transparent inorganic layer 3 is disposed on the side of the anode layer 1 away from the substrate. The transparent inorganic layer 3 includes a first opening corresponding to the first anode 101, a second opening corresponding to the second anode 102, and a third opening corresponding to the third anode 103. The transparent inorganic layer 3 includes at least four sets of transparent inorganic sublayers. The at least four sets of transparent inorganic sublayers include a first transparent inorganic sublayer 31, a second transparent inorganic sublayer 32, a third transparent inorganic sublayer 33, and a fourth transparent inorganic sublayer 34, which are sequentially disposed and have increasing thicknesses. The first transparent inorganic sublayer 31, the second transparent inorganic sublayer 32, the third transparent inorganic sublayer 33, and the fourth transparent inorganic sublayer 34 respectively include a first sub-inorganic layer 301 and a second sub-inorganic layer 301 stacked on top of each other. The inorganic layer 302, the third sub-inorganic layer 303, the fourth sub-inorganic layer 304, the fifth sub-inorganic layer 305, the sixth sub-inorganic layer 306, the seventh sub-inorganic layer 307, and the eighth sub-inorganic layer 308 are all made of a first material. The materials of the first sub-inorganic layer 301, the third sub-inorganic layer 303, the fifth sub-inorganic layer 305, and the seventh sub-inorganic layer 307 are all made of a second material. The materials of the second sub-inorganic layer 302, the fourth sub-inorganic layer 304, the sixth sub-inorganic layer 306, and the eighth sub-inorganic layer 308 are all made of a second material. The first material is different from the second material. The first opening exposes the second sub-inorganic layer 302, the second opening exposes the fourth sub-inorganic layer 304, and the sixth opening exposes the sixth sub-inorganic layer 306.

[0045] The sidewall openings of the fourth sub-inorganic layer 304, the sixth sub-inorganic layer 306, and the eighth sub-inorganic layer 308 exposed in the first, second, and third openings are all larger than the sidewall openings of the third sub-inorganic layer 303, the fifth sub-inorganic layer 305, and the seventh sub-inorganic layer 307.

[0046] Between two adjacent openings, a shorter SiN sub-inorganic layer is sandwiched between two longer SiO sub-inorganic layers to form a partition structure 7. This partition structure 7 effectively solves the lateral crosstalk problem between strong microcavity structures. Furthermore, since the transparent inorganic layer 3 is a multilayer structure formed by alternating layers of different materials, the partition structure 7 can be rapidly fabricated by adjusting the etching rate for different materials, thus improving fabrication efficiency.

[0047] The anode layer 1 is made of metals such as Al and Ag; the first material is SiO and the second material is SiN.

[0048] Optionally, the pixel unit further includes: The anode connection layer 4 includes a first anode connection post 401 extending from the bottom of the first opening to the first anode 101, a second anode connection post 402 extending from the bottom of the second opening to the second anode 102, and a third anode connection post 403 extending from the bottom of the third opening to the third anode 103.

[0049] The light-emitting layer 5 includes a first light-emitting structure 501 located on the bottom side of the first opening, a second light-emitting structure 502 located on the bottom side of the second opening, and a third light-emitting structure 503 located on the bottom side of the third opening.

[0050] The cathode layer 6 has a first cathode structure 601 covering the top of the first light-emitting structure 501, a second cathode structure 602 covering the top of the second light-emitting structure 502, and a third cathode structure 603 covering the top of the third light-emitting structure 503.

[0051] Among them, the anode bonding layer 4 is made of a transparent material such as ITO.

[0052] Optionally, the distance between the first cathode structure 601 and the first anode 101 is the microcavity length required for the first color pixel area P1, the distance between the second cathode structure 602 and the second anode 102 is the microcavity length required for the second color pixel area P2, and the distance between the third cathode structure 603 and the third anode 103 is the microcavity length required for the third color pixel area P3.

[0053] By employing a transparent inorganic layer 3 with alternating superposition of different materials in a multilayer structure, the thickness of the strong microcavity structure can be accurately controlled during the fabrication of the strong microcavity structure, thereby improving the display effect of the device.

[0054] Optionally, the transparent inorganic layer 3 further includes a top sub-inorganic layer 309 located on the side of the fourth inorganic layer away from the driving substrate. The material of the top sub-inorganic layer 309 is a first material, and the side wall openings of the top sub-inorganic layer 309 exposed in the first opening, the second opening, and the third opening are smaller than the side wall openings of the eighth sub-inorganic layer 308.

[0055] By setting the top inorganic sub-layer 309 prepared by the first material, a partition structure 7 can be formed between the fourth transparent inorganic sub-layer 34 and the top inorganic sub-layer 309, that is, a shorter inorganic sub-layer of SiN material is sandwiched between the two longer inorganic sub-layers of SiO material.

[0056] Optionally, in the same transparent inorganic sublayer, the two sub-inorganic layers have the same thickness.

[0057] By making the thickness of the two different inorganic sub-layers equal, the refractive index of each transparent inorganic sub-layer can be calculated equivalently when calculating the required microcavity length for each pixel region, thus reducing the complexity of the design.

[0058] Optionally, the pixel unit further includes an isolation structure 2 located between two adjacent anodes 101, 102, and 103, wherein the isolation structure 2 is made of the first material. The isolation structure 2 can separate the anodes.

[0059] The present invention also provides a display panel comprising pixel units arranged in an array as described above.

[0060] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution of the present invention, or the direct application of the inventive concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A method for manufacturing a pixel unit, characterized in that, Includes the following steps: S1. An anode layer is fabricated on one side of a substrate, such that the anode layer includes a first anode located in a first color pixel region, a second anode located in a second color region, and a third anode located in a third color pixel region; S2. An initial transparent inorganic layer is formed on the side of the anode layer away from the substrate, such that the initial transparent inorganic layer includes at least four sets of transparent inorganic sub-layers. The at least four sets of transparent inorganic sub-layers include a first transparent inorganic sub-layer, a second transparent inorganic sub-layer, a third transparent inorganic sub-layer, and a fourth transparent inorganic sub-layer, which are sequentially arranged and have increasing thicknesses. The first transparent inorganic sub-layer, the second transparent inorganic sub-layer, the third transparent inorganic sub-layer, and the fourth transparent inorganic sub-layer each include a first sub-inorganic layer and a second sub-inorganic layer, a third sub-inorganic layer and a fourth sub-inorganic layer, a fifth sub-inorganic layer and a sixth sub-inorganic layer, and a seventh sub-inorganic layer and an eighth sub-inorganic layer, respectively, which are stacked together. The first sub-inorganic layer, the third sub-inorganic layer, the fifth sub-inorganic layer, and the seventh sub-inorganic layer are all made of a first material, and the second sub-inorganic layer, the fourth sub-inorganic layer, the sixth sub-inorganic layer, and the eighth sub-inorganic layer are all made of a second material. The first material and the second material are different. S3. Pattern the initial transparent inorganic layer to form a first anode through-hole, a second anode through-hole, and a third anode through-hole that extend to the first anode, the second anode, and the third anode, respectively, to obtain a first intermediate transparent inorganic layer; S4. Pattern the first intermediate transparent inorganic layer to sequentially obtain an initial first opening that communicates with the first anode through hole and exposes the surface of the second sub-inorganic layer, an initial second opening that communicates with the second anode through hole and exposes the surface of the fourth sub-inorganic layer, and an initial third opening that communicates with the third anode through hole and exposes the surface of the sixth sub-inorganic layer, thereby obtaining the second intermediate transparent inorganic layer. S5: Etch the initial first opening, initial second opening and initial third opening, such that the sidewall etching rate of the fourth sub-inorganic layer, sixth sub-inorganic layer and eighth sub-inorganic layer is greater than the sidewall etching rate of the third sub-inorganic layer, fifth sub-inorganic layer and seventh sub-inorganic layer, to form the first opening, second opening and third opening with a partition structure, and obtain a transparent inorganic layer.

2. The method for manufacturing a pixel unit according to claim 1, characterized in that, After step S4 and before step S5, the manufacturing method further includes: forming an anode bonding layer conformally on the surface of the second intermediate transparent inorganic layer; Remove part of the anode connection layer, and retain the first anode connection post located in the first anode through hole, the second anode connection post located in the second anode through hole, and the third anode connection post located in the third anode through hole.

3. The method for manufacturing a display panel according to claim 2, characterized in that, Following step S5, the following is also included: S6. A light-emitting layer and a cathode layer are sequentially fabricated on the side of the transparent inorganic layer away from the substrate.

4. A pixel unit, characterized in that, It includes a first color pixel area, a second color pixel area, and a third color pixel area; the pixel unit includes: The anode layer includes a first anode located in a first color pixel region, a second anode located in a second color region, and a third anode located in a third color pixel region; A transparent inorganic layer is disposed on the side of the anode layer away from the substrate. The transparent inorganic layer includes a first opening corresponding to the first anode, a second opening corresponding to the second anode, and a third opening corresponding to the third anode. The transparent inorganic layer includes at least four sets of transparent inorganic sublayers, each set comprising a first transparent inorganic sublayer, a second transparent inorganic sublayer, a third transparent inorganic sublayer, and a fourth transparent inorganic sublayer arranged sequentially with increasing thickness. The first, second, third, and fourth transparent inorganic sublayers are each stacked. A first sub-inorganic layer, a second sub-inorganic layer, a third sub-inorganic layer, a fourth sub-inorganic layer, a fifth sub-inorganic layer, a sixth sub-inorganic layer, a seventh sub-inorganic layer, and an eighth sub-inorganic layer are disposed. The first sub-inorganic layer, the third sub-inorganic layer, the fifth sub-inorganic layer, and the seventh sub-inorganic layer are all made of a first material, while the second sub-inorganic layer, the fourth sub-inorganic layer, the sixth sub-inorganic layer, and the eighth sub-inorganic layer are all made of a second material. The first material and the second material are different. The first opening exposes the second sub-inorganic layer, the second opening exposes the fourth sub-inorganic layer, and the sixth opening exposes the sixth sub-inorganic layer. The sidewall openings of the fourth, sixth, and eighth sub-inorganic layers exposed in the first, second, and third openings are all larger than the sidewall openings of the third, fifth, and seventh sub-inorganic layers.

5. The pixel unit according to claim 4, characterized in that, Also includes: The anode connection layer includes a first anode connection post extending from the bottom of the first opening to the first anode, a second anode connection post extending from the bottom of the second opening to the second anode, and a third anode connection post extending from the bottom of the third opening to the third anode; The light-emitting layer includes a first light-emitting structure located on one side of the bottom of the first opening, a second light-emitting structure located on one side of the bottom of the second opening, and a third light-emitting structure located on one side of the bottom of the third opening; The cathode layer has a first cathode structure covering the top of the first light-emitting structure, a second cathode structure covering the top of the second light-emitting structure, and a third cathode structure covering the top of the third light-emitting structure.

6. The pixel unit according to claim 5, characterized in that, The distance between the first cathode structure and the first anode is the microcavity length required for the first color pixel area, the distance between the second cathode structure and the second anode is the microcavity length required for the second color pixel area, and the distance between the third cathode structure and the third anode is the microcavity length required for the third color pixel area.

7. The pixel unit according to claim 5, characterized in that, The transparent inorganic layer also includes a top sub-inorganic layer located on the side of the fourth inorganic layer away from the driving substrate. The material of the top sub-inorganic layer is a first material. The side wall openings of the top sub-inorganic layer exposed in the first opening, the second opening, and the third opening are smaller than the side wall openings of the eighth sub-inorganic layer.

8. The pixel unit according to claim 5, characterized in that, In the same transparent inorganic sublayer, the thickness of the two inorganic sublayers is equal.

9. The pixel unit according to claim 5, characterized in that, It also includes an isolation structure located between two adjacent anodes of the first anode, the second anode, and the third anode, wherein the material of the isolation structure is the first material.

10. A display panel, characterized in that, Including pixel units arranged in an array as described in any one of claims 4-9.

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