Over-current protection switch for chip and chip

Abstract

The invention provides an over-current protection switch for a chip and the chip, the over-current protection switch comprises a first heating member, a current limiting member and a second heating member, the first heating member is used for connecting a first electrode for conveying current; a first heating piece is arranged on the flow limiting piece, the effective width of the flow limiting piece ranges from 0.5 micrometer to 10 micrometers, and the effective length of the flow limiting piece ranges from 1 micrometer to 20 micrometers; the second heating piece is also arranged on the current limiting piece, and the second heating piece is a second electrode for conveying current; wherein the multiple range of the number of the second heating pieces relative to the number of the first heating pieces is 2-4, the range of the distance between the first heating pieces and any second heating piece is 0.5-10 [mu] m, and the multiple range of the resistance values of the first heating pieces and the resistance values of the second heating pieces relative to the resistance value of the current limiting piece is 10-100. When the current transmitted by the first electrode and the second electrode is larger than a preset current threshold value, the current limiting piece can be fused at the position where the first heating piece is installed or the position where the second heating piece is installed.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and more particularly to an overcurrent protection switch and chip for use in a chip. Background Technology

[0002] In the field of integrated circuits, overcurrent protection switches are key components for ensuring the safe operation of chips. However, existing fuse structures, such as stand-alone surface-mount fuses, PiN diode fuses, or transistor fuses, face many challenges when integrated into chips: these traditional solutions often introduce significant parasitic inductance due to their complex structure, leading to reduced response speed and increased energy loss; or, their large physical size is not conducive to minimizing chip area design; or, in scenarios requiring high current withstand capability, they are prone to arcing or sparking, posing safety hazards; in addition, although common electronic fuses (e-fuses) can be integrated, whether applied to low current applications at the milliampere level or high current applications at the power supply level, and although they can achieve stringent tests such as electrostatic discharge, load short circuit, and over-temperature protection through protection circuit design, the different withstand voltage requirements and the additional chip size required for these protection circuits limit their widespread application in various safety-compliant applications such as power devices. Summary of the Invention

[0003] This application provides an overcurrent protection switch and chip for a chip, which provides the chip with overcurrent protection that features high integration, reliable fusing characteristics and excellent area control.

[0004] In a first aspect, embodiments of this application provide an overcurrent protection switch for a chip, the overcurrent protection switch comprising: A first heating element, wherein the first heating element is used to connect to a first electrode for transmitting current; A current limiting element is provided on the current limiting element, the effective width of the current limiting element is in the range of 0.5μm-10μm, and the effective length of the current limiting element is in the range of 1μm-20μm. The second heating element is also disposed on the current limiting element, and the second heating element is used as a second electrode for transmitting current; The number of the second heating elements is a multiple of 2-4 relative to the number of the first heating elements; the distance between the first heating element and any of the second heating elements is 0.5μm-10μm; the resistance values ​​of the first and second heating elements are multiples of 10-100 relative to the resistance value of the current limiting element; and when the current delivered by the first and second electrodes exceeds a preset current threshold, the current limiting element melts at the location where the first heating element is installed.

[0005] In some embodiments, the effective length of the flow restrictor is at least equal to the sum of the distances between the first heating element and each of the second heating elements.

[0006] In some embodiments, the melting point temperature of the first heating element and the melting point temperature of the second heating element are both multiples of 2 relative to the melting point temperature of the current limiting element.

[0007] In some embodiments, the heating coefficient of the first heating element is greater than that of the second heating element.

[0008] In some embodiments, the current limiting element includes: a rectangle, an arc, a square, and a polygonal shape.

[0009] In some embodiments, the overcurrent protection switch further includes: a first metal layer, the first metal layer including: a first connector and a second connector; the first connector is connected to the first heating element, the second connector is connected to the second heating element, the first connector, the second connector and the current limiting element are all isolated by a dielectric layer, the first connector is used to connect to the first electrode, and the second connector is used to connect to the second electrode.

[0010] In some embodiments, the overcurrent protection switch further includes: a first metal layer and a second metal layer, the first metal layer being connected to the first heating element, the third connector being connected to the second heating element, the first metal layer, the second metal layer and the current limiting element being isolated by a dielectric layer, the first metal layer being used to connect to the first electrode, and the second metal layer being used to connect to the second electrode.

[0011] In some embodiments, the second metal layer further includes: a plurality of protrusions, each of the protrusions being connected to the second metal layer via a set of basic units, the set of basic units including: a first heating element, a second heating element, and the current limiting element.

[0012] In some embodiments, the area of ​​the first metal layer and the area of ​​the second metal layer range from 1um*1um to 10um*10um.

[0013] Secondly, embodiments of this application provide a chip, including an overcurrent protection switch for the chip as described in any one of the embodiments of this application.

[0014] This application provides an overcurrent protection switch and a chip for use in a chip. The overcurrent protection switch includes: a first heating element, a current limiting element, and a second heating element. The first heating element is used to connect to a first electrode for transmitting current. The first heating element is disposed on the current limiting element, and the effective width of the current limiting element ranges from 0.5μm to 10μm, and the effective length of the current limiting element ranges from 1μm to 20μm. The second heating element is also disposed on the current limiting element and is used to transmit current to a second electrode. The number of second heating elements is a multiple of 2 to 4 relative to the number of first heating elements, the distance between the first heating element and any second heating element ranges from 0.5μm to 10μm, and the resistance values ​​of the first heating element and the second heating element are multiples of 10 to 100 relative to the resistance value of the current limiting element. When the current transmitted by the first electrode and the second electrode exceeds a preset current threshold, the current limiting element melts at the location where the first heating element is installed. In the above structure, by employing a current-limiting element with an effective width of 0.5μm to 10μm and an effective length of 1μm to 20μm, and combining the first heating element and the second heating element with a multiple of 2 to 4 and a spacing of 0.5μm to 10μm, while ensuring that the resistance values ​​of the first heating element and the second heating element are in the range of 10 to 100 times the resistance value of the current-limiting element, the fuse location can be precisely controlled in the event of overcurrent, either in the area where the first heating element is installed or the area where the second heating element is installed on the current-limiting element. The high resistivity and temperature resistance of the via structure are used to preferentially trigger the fuse mechanism, and the small footprint allows for multiple reuse of the above devices, thereby effectively dispersing current, suppressing arc generation, and achieving spark-free safe disconnection. This not only significantly reduces the footprint, adapting to the compact requirements of chip integration or stacking, but also improves overall reliability and lifespan, overcoming the limitations of traditional fuses in high-current scenarios. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A schematic diagram of a first type of overcurrent protection switch provided in an embodiment of this application; Figure 2 A top view of the first type of overcurrent protection switch provided in the embodiments of this application; Figure 3 A top view of the first type of overcurrent protection switch provided in the embodiments of this application, and a cross-sectional view along the tangent line aa'. Figure 4A top view of the first type of overcurrent protection switch provided in the embodiments of this application, and a cross-sectional view along the tangent line bb'. Figure 5 A top view of a second type of overcurrent protection switch provided in an embodiment of this application; Figure 6 A top view of the second type of overcurrent protection switch provided in this application, and a cross-sectional view along the tangent line aa'. Figure 7 A top view of the second type of overcurrent protection switch provided in the embodiments of this application, and a cross-sectional view along the tangent line bb'. Figure 8 A schematic diagram of a third type of overcurrent protection switch provided in an embodiment of this application; Figure 9 This is a schematic diagram of a fourth type of overcurrent protection switch provided in an embodiment of this application. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described below with reference to the accompanying drawings.

[0018] The terms "first" and "second," etc., used in the specification, claims, and drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0019] The term "embodiment" as used herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0020] It should be understood that in this application, "at least one (item)" means one or more, "more than one" means two or more, "at least two (items)" means two or three or more, and "and / or" is used to describe the relationship between related objects, indicating that there can be three relationships. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the related objects before and after are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0021] Please see Figure 1 , Figure 1 This is a schematic diagram of an overcurrent protection switch and chip structure provided in an embodiment of this application. Figure 1 As shown, the overcurrent protection switch 100 includes: a first heating element via2, a current limiting element m2, and a second heating element via1. The first heating element via2 is used to connect to a first electrode for transmitting current. The first heating element via2 is disposed on the current limiting element m2, and the effective width of the current limiting element m2 ranges from 0.5μm to 10μm, and the effective length of the current limiting element m2 ranges from 1μm to 20μm. The second heating element via1 is also disposed on the current limiting element m2 and is used to transmit current to a second electrode. The second heating element via1... The number of vias is a multiple of 2-4 relative to the number of first heating elements via2. The distance between the first heating element via2 and any second heating element via1 is 0.5μm-10μm. The resistance values ​​of the first heating element via2 and the second heating element via1 are multiples of 10-100 relative to the resistance value of the current limiting element m2. When the current delivered by the first electrode and the second electrode is greater than the preset current threshold, the current limiting element m2 melts at the location where the first heating element via2 is installed or the location where the second heating element via1 is installed.

[0022] For example, the first heating element via2 is used to connect to the first electrode that carries the current. This first electrode is typically connected to the power input terminal of the chip or a functional module requiring overcurrent protection. The current limiting element m2 adopts a metal wire structure, with the first heating element via2 disposed on one side. The effective width of the current limiting element m2 is limited to the range of 0.5μm to 10μm, and the effective length is controlled between 1μm and 20μm. Experimental analysis shows that a width less than 0.5μm will lead to excessively high current density, which may cause premature melting; while a width exceeding 10μm will reduce the melting sensitivity. Similarly, a length less than 1μm or more than 20μm will result in poor effective heat accumulation and inability to control the melting point position, thus failing to effectively prevent arcing or sparking.

[0023] It should be noted that the specific melting point is set by setting the heating coefficient of the first heating element via2 and the heating coefficient of the second heating element via1. For example, if melting is required at the location where the first heating element via2 is installed, the heating coefficient of the first heating element via2 is set to be higher than that of the second heating element via1.

[0024] The second heating element via1 is located on the other side of the current limiting element m2 and is used to connect the second electrode that transmits current, forming a complete current path.

[0025] The number of second heating elements via1 is a multiple of 2 to 4 relative to the number of first heating elements via2. This ratio ensures uniform current distribution within the current-limiting element and prevents the formation of localized hot spots. Simultaneously, the distance between the first heating element via2 and any second heating element via1 is strictly controlled within the range of 0.5 μm to 10 μm. This distance optimizes heat conduction efficiency, ensuring that heat can be rapidly transferred to the predetermined melting area under overcurrent conditions.

[0026] Of particular importance is that the resistance values ​​of the first heating element via2 and the second heating element via1 are in the range of 10 to 100 times the resistance value of the current limiting element m2. Experimental analysis shows that by increasing the resistance ratio of the via structure, the heat generated by the current during normal operation is mainly concentrated in the via structure, while under overcurrent conditions, this heat can be effectively conducted to the current limiting element, triggering a controllable melting behavior.

[0027] This application provides an overcurrent protection switch and a chip for use in a chip. The overcurrent protection switch includes: a first heating element, a current limiting element, and a second heating element. The first heating element is used to connect to a first electrode for transmitting current. The first heating element is disposed on the current limiting element, and the effective width of the current limiting element ranges from 0.5μm to 10μm, and the effective length of the current limiting element ranges from 1μm to 20μm. The second heating element is also disposed on the current limiting element and is used to transmit current to a second electrode. The number of second heating elements is a multiple of 2 to 4 relative to the number of first heating elements, the distance between the first heating element and any second heating element ranges from 0.5μm to 10μm, and the resistance values ​​of the first heating element and the second heating element are multiples of 10 to 100 relative to the resistance value of the current limiting element. When the current transmitted by the first electrode and the second electrode exceeds a preset current threshold, the current limiting element melts at the location where the first heating element is installed. In the above structure, by employing a current-limiting element with an effective width of 0.5μm to 10μm and an effective length of 1μm to 20μm, and combining the first heating element and the second heating element with a multiple of 2 to 4 and a spacing of 0.5μm to 10μm, while ensuring that the resistance values ​​of the first heating element and the second heating element are in the range of 10 to 100 times the resistance value of the current-limiting element, the fuse location can be precisely controlled in the event of overcurrent, either in the area where the first heating element is installed or the area where the second heating element is installed on the current-limiting element. The high resistivity and temperature resistance of the via structure are used to preferentially trigger the fuse mechanism, and the small footprint allows for multiple reuse of the above devices, thereby effectively dispersing current, suppressing arc generation, and achieving spark-free safe disconnection. This not only significantly reduces the footprint, adapting to the compact requirements of chip integration or stacking, but also improves overall reliability and lifespan, overcoming the limitations of traditional fuses in high-current scenarios.

[0028] To more clearly illustrate the technical solution of this application, the technical solution of this application will be described below through specific embodiments. It should be noted that the specific embodiments are used to expand the description of the technical solution of this application, and are not intended to limit this application.

[0029] In some embodiments, the effective length of the flow restrictor m2 is at least equal to the sum of the distances between the first heating element via2 and each of the second heating elements via1.

[0030] For example, the effective length of the current-limiting element m2 is designed to be at least equal to the sum of the distances between the first heating element via2 and each of the second heating elements via1. Specifically, this effective length refers to the length through which the current flows in the current-limiting element m2 through the first heating element via2 and the second heating element via1, and it must be able to completely cover all possible heat-electric propagation distances from the junction center of the first heating element via2 to the junction center of any one of the second heating elements via1. When this condition is met, in the event of an overcurrent event, the Joule heat generated by the first heating element via2 (as the main heat source) can be effectively and sufficiently conducted and accumulated along the current-limiting element m2, thereby ensuring that the heat is sufficiently confined within this predetermined path range, avoiding premature diffusion of heat to the side metal layers (such as metal3 or metal1) and resulting in melting energy loss or uncertain melting point. This design strictly limits the melting process to the area near the first heating element via2 of the current-limiting element m2, greatly improving the predictability and consistency of the melting behavior.

[0031] By precisely controlling this effective length, the overcurrent protection switch 100 can achieve rapid, accurate, and arc-free melting when the preset current threshold is reached, thereby significantly improving the safety level and reliability of the chip under overcurrent stress.

[0032] In some embodiments, the melting point temperature of the first heating element via2 and the melting point temperature of the second heating element via1 are both greater than 2 times the melting point temperature of the current limiting element m2.

[0033] For example, the melting point temperature of the first heating element via2 and the melting point temperature of the second heating element via1 are both greater than 2 times the melting point temperature of the current limiting element m2, which directly determines the location and order of the melting failure behavior in an overcurrent event.

[0034] The current-limiting element m2 is typically made of a conductive metal with a relatively low melting point, such as aluminum (melting point approximately 660°C) or its alloys; while the first heating element via2 and the second heating element via1 are made of materials with significantly higher melting points, such as tungsten (melting point approximately 3422°C). When a large current flows through this structure, according to Joule's law, because the resistivity of the via structure is much higher than that of the metal wires, they will first generate and accumulate a large amount of heat. This heat will be rapidly conducted to the current-limiting element m2, which is in direct contact with it. Since the melting point of the current-limiting element m2 is much lower than that of the via material (for example, the melting point of aluminum is only about one-fifth that of tungsten), when the heat accumulates to a dangerous level, the temperature of the current-limiting element m2 will preferentially reach its melting point and undergo a phase change melt, thereby breaking the circuit. The first heating element via2 and the second heating element via1, due to their extremely high melting points, can maintain the physical integrity of the structure during this process, effectively preventing splashing, irregular breakage, or possible arcing caused by the melting of the via itself. This gradient design of the material's melting point creates a "sacrifice layer" mechanism, which prioritizes and controllably melts the preset current limiter m2, thereby ensuring the reliable execution of the overcurrent protection function and the safety of the entire chip system.

[0035] In some embodiments, the heating coefficient of the first heating element via2 is greater than that of the second heating element via1.

[0036] The heating coefficient of the first heating element via2 is designed to be greater than that of the second heating element via1. Here, "heating coefficient" is a comprehensive performance parameter used to describe the efficiency of the structural unit in generating and accumulating heat per unit current. It is determined by the resistivity, specific heat capacity, thermal conductivity of the material, and the specific geometry of the element, and works together with the quantitative relationship between the two.

[0037] By giving the first heating element via2 a higher heating coefficient, it means that under the same current conditions, the first heating element via2 will heat up at a faster rate and become a more intense heat source compared to the second heating element via1. This asymmetric heat generation design creates a clear heat gradient field on the current limiting element m2: heat diffuses and is conducted from the region of the first heating element via2 with a high heating coefficient towards the second heating element via1 with a low heating coefficient. This directional heat flow effectively controls the melting pattern, causing the melting initiation point of the current limiting element m2 to be closer to the first heating element via2, and the melting extension direction tends to be towards the second heating element via1. This controlled melting direction is crucial, as it prevents the melting point from occurring randomly on the current limiting element m2, thus ensuring consistent electrical isolation for each melting.

[0038] In this way, by accurately and minimizing the control of the melting point, the instantaneous energy of melting on both the high and low voltage sides can be controlled to be less than the energy demand caused by the electric arc, thereby preventing related accidents caused by sparks. Furthermore, by minimizing the break point area, the melting stress is greatly reduced, making it suitable for use at any location on the chip.

[0039] In some embodiments, the current limiting element m2 includes: a rectangle, an arc, a square, and a polygonal shape.

[0040] Different shapes of the current limiting element m2 can be reused multiple times in a switch structure. Depending on the specific requirements of the target application scenario (such as fusing current value, response speed, and area occupied), these shapes can be selected or combined innovatively to achieve customized overcurrent protection performance. This fully demonstrates the adaptability and scalability of the design of this invention.

[0041] In some embodiments, such as Figures 2 to 4 As shown, the overcurrent protection switch 100 further includes: a first metal layer m3, the first metal layer m3 includes: a first connector and a second connector; the first connector is connected to the first heating element via2, the second connector is connected to the second heating element via1, the first connector, the second connector and the current limiting element m2 are all isolated by a dielectric layer, the first connector is used to connect to the first electrode, and the second connector is used to connect to the second electrode.

[0042] For example, such as Figures 2 to 4As shown, the overcurrent protection switch 100 can be manufactured using a process that includes only two metal layers. In this simplified structure, the overcurrent protection switch 100, in addition to the first heating element via2, the current limiting element m2, and the second heating element via1, also includes a first metal layer m3, which consists of two electrically isolated parts: a first connector m31 and a second connector m32. The first connector m31 is connected to the upper end of the first heating element via2, which is the main heat source, while the second connector m32 is connected to the upper end of the second heating element via1. The current limiting element m2 is located in the lower metal layer (e.g., metal2) and is electrically connected to the upper first metal layer m3 through the first heating element via2 and the second heating element via1. Crucially, the first connector m31, the second connector m32, and the lower current limiting element m2 are all completely electrically isolated from each other through an interlayer dielectric layer. In this configuration, the current flows from the first electrode into the first connector m31, downwards through the first heating element via2, into the current limiting element m2, then upwards through one or more second heating elements via1, converging into the second connector m32 and flowing to the second electrode. This two-layer metal structure eliminates one metal layer and the corresponding via layer, greatly reducing process complexity and manufacturing costs, while still fully retaining the core protection mechanism based on via heating and current limiting element melting. It is suitable for current process nodes or chip designs that are extremely cost-sensitive.

[0043] In some embodiments, such as Figures 5 to 7 As shown, the overcurrent protection switch 100 further includes: a first metal layer m3 and a second metal layer m1. The first metal layer m3 is connected to the first heating element via2, and the third connector is connected to the second heating element via1. The first metal layer m3, the second metal layer m1 and the current limiting element m2 are all isolated by a dielectric layer. The first metal layer m3 is used to connect the first electrode, and the second metal layer m1 is used to connect the second electrode.

[0044] For example, the overcurrent protection switch 100 is implemented using a standard three-layer metal process to provide better current distribution and heat dissipation performance. This structure includes a first metal layer m3 and a second metal layer m1. The first metal layer m3 is connected to the upper end of the first heating element via2, serving as the current input terminal. The second metal layer m1 is connected to the lower end of the second heating element via1, serving as the current output terminal. The current limiting element m2 is located in the middle metal layer (i.e., metal2), forming the core fuse functional area. The three conductive layers, the first metal layer m3, the second metal layer m1, and the current limiting element m2, are all reliably electrically isolated through interlayer dielectric layers, ensuring that the current must flow sequentially according to the designed path: first metal layer m3 → first heating element via2 → current limiting element m2 → second heating element via1 → second metal layer m1. Compared to a two-layer structure, this three-layer stacked structure offers better overall series distribution and a superior heat dissipation path. Heat can be dissipated through both the upper first metal layer m3 and the lower second metal layer m1, thus maintaining a lower steady-state temperature during normal operation. Furthermore, when an overcurrent occurs, heat is efficiently confined to a small area formed by the via and the current-limiting element m2, ensuring rapid triggering of the fuse.

[0045] In some embodiments, the second metal layer m1 further includes: a plurality of protrusions, each protrusion being connected to the second metal layer m1 via a set of basic units 200, the set of basic units 200 including: a first heating element via2, a second heating element via1 and a current limiting element m2.

[0046] For example, to meet the requirement of higher current carrying capacity, the overcurrent protection switch 100 can be implemented by connecting multiple basic units 200 in parallel. Specifically, multiple protrusions are designed on the second metal layer m1. Each protrusion is connected to the main body of the second metal layer m1 through a set of independent basic units 200. The set of basic units 200 mentioned here is a complete core protection unit, which includes: a first heating element via2, multiple second heating elements via1, and current limiting elements m2 connecting them. In this parallel architecture, the total current from the first metal layer m3 is distributed to each first heating element via2, then flows through their respective current limiting elements m2, and finally converges to each protrusion of the second metal layer m1, and then flows into the main body of the second metal layer m1. This design essentially arranges multiple basic fuse units in parallel on a two-dimensional plane, so that the total current capacity of the entire switch is approximately equal to the sum of the current capacities of all parallel units.

[0047] like Figure 8 As shown, connecting three basic units 200 in parallel between a first metal layer m3 and a third metal layer m1 can achieve approximately three times the current limiting capacity.

[0048] like Figure 9 As shown, connecting ten basic units 200 in parallel between a set of first metal layers m3 and third metal layers m1 can achieve approximately ten times the current limiting capability.

[0049] Through the series integration or stacking of this structure / module, designers can flexibly achieve optimized designs with different withstand voltages and currents, thereby generating application scenarios covering a wide range of currents and greatly improving the reusability of the design and its adaptability to technical scenarios.

[0050] It should be noted that the edge distance between any two protrusions is greater than or equal to the preset edge distance d2.

[0051] For example, when using the above parallel structure, the edge distance between every two protrusions is set to be greater than or equal to a preset edge distance d2. The main purposes are: 1. To ensure that when a single basic unit 200 melts, the resulting metal spatter or thermal plasma does not bridge to adjacent protrusions, thereby avoiding accidental short circuits between parallel units and ensuring the independent operation of other unmelted units and the integrity of the entire switching function; 2. To provide sufficient thermal isolation to prevent the enormous heat generated by one unit during melting from causing thermal shock to neighboring units, affecting their future performance and lifespan. The specific value of the edge distance d2 needs to be determined comprehensively through process simulation and experiments, combined with the characteristics of the dielectric material and the energy level during melting.

[0052] In some embodiments, the area of ​​the first metal layer m3 and the area of ​​the second metal layer m1 range from 1um*1um to 10um*10um.

[0053] For example, in the overcurrent protection switch 100, the area of ​​the first metal layer m3 and the area of ​​the second metal layer m1 are limited to the range of 1μm×1μm to 10μm×10μm. This area range is an ideal balance point for achieving good electrical connection and controllable fuse behavior. If the area is too small (e.g., less than 1μm²), it may lead to excessively high connection resistance or ineffective heat dissipation; if the area is too large (e.g., more than 100μm²), it will unnecessarily increase the overall area of ​​the switch, violating the original intention of integration. This area limitation, together with the aforementioned spacing requirements, ensures the successful implementation of high-density, high-reliability parallel overcurrent protection switches. In addition, when multiple basic units 200 are connected in parallel, the area of ​​the first metal layer m3 and the second metal layer m1 can also be appropriately superimposed according to requirements to pursue the optimal effective area ratio.

[0054] Secondly, embodiments of this application provide a chip, including an overcurrent protection switch for the chip as described in any of the embodiments of this application.

[0055] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An overcurrent protection switch for a chip, characterized in that, The overcurrent protection switch includes: A first heating element, wherein the first heating element is used to connect to a first electrode for transmitting current; A current limiting element is provided on the current limiting element, the effective width of the current limiting element is in the range of 0.5μm-10μm, and the effective length of the current limiting element is in the range of 1μm-20μm. The second heating element is also disposed on the current limiting element, and the second heating element is used as a second electrode for transmitting current; The number of the second heating elements is a multiple of 2-4 relative to the number of the first heating elements; the distance between the first heating element and any of the second heating elements is 0.5μm-10μm; the resistance values ​​of the first and second heating elements are multiples of 10-100 relative to the resistance value of the current limiting element; and when the current delivered by the first and second electrodes exceeds a preset current threshold, the current limiting element may melt at the location where the first heating element is installed or the location where the second heating element is installed.

2. The overcurrent protection switch for a chip as described in claim 1, characterized in that, The effective length of the current-limiting element is at least equal to the sum of the distances between the first heating element and each of the second heating elements.

3. The overcurrent protection switch for a chip as described in claim 1, characterized in that, The melting point temperature of the first heating element and the melting point temperature of the second heating element are both greater than 2 times the melting point temperature of the current limiting element.

4. The overcurrent protection switch for a chip as described in claim 1, characterized in that, The heating coefficient of the first heating element is greater than that of the second heating element.

5. The overcurrent protection switch for a chip as described in claim 1, characterized in that, The current limiting components include: rectangular, arc-shaped, square, and polygonal shapes.

6. The overcurrent protection switch for a chip as described in claim 1, characterized in that, The overcurrent protection switch further includes: a first metal layer, the first metal layer including: a first connector and a second connector; the first connector is connected to the first heating element, the second connector is connected to the second heating element, the first connector, the second connector and the current limiting element are all isolated by a dielectric layer, the first connector is used to connect to the first electrode, and the second connector is used to connect to the second electrode.

7. The overcurrent protection switch for a chip as described in claim 1, characterized in that, The overcurrent protection switch further includes: a first metal layer and a second metal layer, the first metal layer being connected to the first heating element, the third connector being connected to the second heating element, and the first metal layer, the second metal layer and the current limiting element being isolated by a dielectric layer, the first metal layer being used to connect to the first electrode, and the second metal layer being used to connect to the second electrode.

8. The overcurrent protection switch for a chip as described in claim 7, characterized in that, The second metal layer further includes: a plurality of protrusions, each of the protrusions being connected to the second metal layer via a set of basic units, the set of basic units including: a first heating element, a second heating element, and the current limiting element.

9. The overcurrent protection switch for a chip as described in claim 7, characterized in that, The area of ​​the first metal layer and the area of ​​the second metal layer range from 1um*1um to 10um*10um.

10. A chip, characterized in that, Includes an overcurrent protection switch for a chip as described in any one of claims 1-9.

Images