Capacitor

Abstract

The invention relates to the technical field of thin film capacitors, and discloses a capacitor, which comprises a shell, a core arranged in the shell, and a potting material filled between the core and the shell; the core is formed by winding a first dielectric film and a second dielectric film in a staggered manner; the second dielectric film is thinner than the first dielectric film; a metalized film is formed on the first dielectric film and / or the second dielectric film; the metalized films are isolated and insulated through the first dielectric film or the second dielectric film; and a conductor is led out of the metallized film and is communicated with an external circuit after penetrating through the potting material. According to the invention, the first dielectric film and the second dielectric film are different in thickness, so that the core formed by stacking the first dielectric film and the second dielectric film is unchanged in capacity and reduced in volume compared with a structure with consistent dielectric film thickness.

Description

Technical Field

[0001] This invention relates to the field of thin-film capacitor technology, and in particular to a capacitor. Background Technology

[0002] With the rapid development of power electronics technology, metallized film capacitors are being used more and more widely in fields such as industrial control, new energy, automotive electronics, rail transportation, and power grids. One of the development trends of metallized film capacitors is miniaturization, which requires metallized films to continuously improve the withstand voltage per unit thickness and achieve a balance between capacitor size and electrical performance.

[0003] Metallization films are typically formed by depositing aluminum or zinc onto the surface of a thin-film dielectric using a vapor deposition process to create conductive electrodes. Currently, the industry generally uses two metallization films of the same thickness in pairs, which presents the following problems: Customized capacitors have volume and electrical performance requirements that cannot be normalized, and the thickness gradient of polypropylene films is currently large, making it difficult to balance the volume and performance of capacitors. Summary of the Invention

[0004] The present invention aims to at least partially solve one of the technical problems in the aforementioned technologies. Therefore, the object of the present invention is to provide a capacitor using metallized films of varying thicknesses wound into a core.

[0005] To achieve the above objectives, embodiments of the present invention provide a capacitor comprising: The outer shell contains a core, and the space between the core and the outer shell is filled with potting compound; The core is formed by interlacing a first dielectric film and a second dielectric film; The thickness of the second dielectric film is less than that of the first dielectric film; A metallization film is formed on the first dielectric film and / or the second dielectric film; The metallized films are isolated and insulated from each other by a first dielectric film or a second dielectric film; A metallized film leads out a conductor, which passes through the potting compound and connects to an external circuit.

[0006] According to an embodiment of the present invention, the capacitor formed by stacking the first dielectric film and the second dielectric film has a different thickness, resulting in a core with the same capacitance but a smaller volume compared to a structure with dielectric film of uniform thickness.

[0007] In addition, a capacitor according to the above embodiments of the present invention may also have the following additional technical features: Optionally, the metallization film is formed on the same side of the first dielectric film and the second dielectric film.

[0008] Optionally, the metallization film is formed only on both sides of the first dielectric film. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the smallest unit according to the first embodiment of the present invention; Figure 2 This is a schematic diagram of the smallest unit according to the second embodiment of the present invention.

[0010] Label Explanation: First dielectric membrane 1 Second dielectric membrane 2 Metallization film 3. Detailed Implementation

[0011] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0012] Because the first dielectric film and the second dielectric film have different thicknesses, the core formed by stacking the two films has the same capacity but a smaller volume compared to a structure with dielectric film thicknesses of the same.

[0013] To better understand the above technical solutions, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the invention to those skilled in the art.

[0014] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0015] A capacitor according to an embodiment of the present invention includes a housing, a core inside, and a filling material between the core and the housing. The structure of the capacitor is based on existing technology, therefore the materials, manufacturing and assembly methods of the casing and potting compound will not be described in detail. The core is formed by interleaving a first dielectric film 1 and a second dielectric film 2. The first dielectric film 1 and the second dielectric film 2 are made of insulating materials. In the existing technology, the first dielectric film 1 and the second dielectric film 2 are actually continuous and uninterrupted layers of the same film for ease of manufacturing. To reduce the volume, the thickness of the film must be uniformly reduced. Since the existing polypropylene film has a large thickness gradient, it is difficult to flexibly balance the core volume and performance.

[0016] This solution uses a structure where the thickness of the second dielectric film 2 is less than that of the first dielectric film 1, thus splitting the existing whole film into two parts. A metallization film 3 is formed on the first dielectric film 1 and / or the second dielectric film 2; The metallized films 3 are isolated and insulated from each other by a first dielectric film 1 or a second dielectric film 2; The metallized film 3 leads out a conductor, which passes through the potting compound and connects to the external circuit.

[0017] Figure 1 One embodiment is in which the metallization film 3 is formed on the same side of the first dielectric film 1 and the second dielectric film 2 respectively. The core size after winding is smaller than that of the existing structure. This is because the thicknesses of the first dielectric film 1 and the second dielectric film 2 are different, so the overall size can be made smaller.

[0018] In this embodiment, the first dielectric film 1 and the second dielectric film 2 are insulating media for each other, which are metallization films 3.

[0019] Figure 2 This is the second embodiment. In this embodiment, the metallization film 3 is formed on both sides of one of the dielectric films, while the other dielectric film does not have the metallization film 3, serving as insulation for the metallization film 3 in its wound state. In this embodiment, the metallization film 3 can be formed on the thicker or thinner of the two dielectric films. The preferred option is to form it on the thicker dielectric film, while the thinner dielectric film serves as mutual insulation between the metallization films 3.

[0020] In the above embodiments, by using dielectric films of different thicknesses, a relatively thicker metallization film can be set on a thinner dielectric film to improve performance.

[0021] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0022] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0023] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. The illustrative expressions of the above terms in this specification should not be construed as necessarily referring to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0024] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A capacitor, characterized in that, include: The outer shell contains a core, and the space between the core and the outer shell is filled with potting compound; The core is formed by interlacing a first dielectric film and a second dielectric film; The thickness of the second dielectric film is less than that of the first dielectric film; A metallization film is formed on the first dielectric film and / or the second dielectric film; The metallized films are isolated and insulated from each other by a first dielectric film or a second dielectric film; A metallized film leads out a conductor, which passes through the potting compound and connects to an external circuit.

2. A capacitor as described in claim 1, characterized in that: Metallization films are formed on the same side of the first dielectric film and the second dielectric film, respectively.

3. A capacitor as described in claim 1, characterized in that: The metallization film is formed only on both sides of the first dielectric film.

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