Light-emitting diode packaging body and light-emitting device
By employing a three-layer wiring structure in the LED package and using a nickel layer to wrap the copper layer to prevent copper migration, the problem of copper migration under high temperature and high heat environments is solved, thereby improving the electrical performance and stability of the package.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HUBEI SANAN OPTOELECTRONICS CO LTD
- Filing Date
- 2025-12-31
- Publication Date
- 2026-04-24
AI Technical Summary
In existing LED packages, ion migration in the copper layer is prone to occur under high temperature and heat environments, leading to short circuits or decreased conductivity, which affects electrical yield and reliability.
A three-layer wiring structure is adopted, in which the first wiring layer serves as an adhesion layer, the second wiring layer contains a copper layer to ensure conductivity, and the third wiring layer contains a nickel layer to wrap the copper layer to prevent migration, forming a continuous structure that covers the second wiring layer.
It effectively prevents short circuits and conductivity degradation caused by copper migration, improves the electrical performance and stability of the LED package, and ensures electrical yield and reliability.
Smart Images
Figure CN121924935A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor devices, and more specifically, to a light-emitting diode package and a light-emitting device. Background Technology
[0002] Light-emitting diodes (LEDs) are widely used in various fields such as display devices, vehicle lighting, and general lighting due to their high reliability, long lifespan, and low power consumption. For example, LEDs can be used as backlight sources for various display devices. To provide effective mechanical protection for LEDs, they are often packaged, which enhances heat dissipation, improves light extraction efficiency, and optimizes beam distribution.
[0003] In existing product designs, the surface metal material of the circuit layer used to connect chip electrodes and bring out pads is usually Cu. Under certain environments, such as high temperature and high heat environments, Cu is prone to ion migration, which affects the electrical properties of the product. For example, it may cause short circuits or reduce the conductivity of the circuit layer. Summary of the Invention
[0004] In view of the defects and shortcomings of the existing chip packaging technology described above, the purpose of this invention is to provide a light-emitting diode package and a light-emitting device. This improves the layer structure of the wiring layer and enhances the reliability of the electrical connection.
[0005] To achieve the above and other related objectives, the present invention provides a light-emitting diode package, comprising:
[0006] The support layer has a first surface and a second surface that are disposed opposite to each other;
[0007] Multiple light-emitting units are spaced apart on the first surface of the support layer. Each light-emitting unit includes a first electrode and a second electrode spaced apart. In the light-emitting unit, the side where the first electrode and the second electrode are located is the electrode side, and the side opposite to the electrode side is the light-emitting side.
[0008] A connecting layer is located above the first surface of the support layer;
[0009] A wiring layer is located above the light-emitting unit and the connection layer and is electrically connected to the first electrode and the second electrode, respectively. Along the direction away from the support layer, the wiring layer includes a first wiring layer, a second wiring layer and a third wiring layer stacked in sequence. The third wiring layer covers the surface of the second wiring layer and the sidewalls of the first wiring layer and the second wiring layer, and wraps the second wiring layer with the first wiring layer.
[0010] A second aspect of the present invention provides a light-emitting device, which includes a circuit board and a plurality of light-emitting elements fixed to the circuit board, the light-emitting elements including the light-emitting diode package provided in this application.
[0011] As described above, the light-emitting diode package and light-emitting device provided by the present invention have at least the following beneficial technical effects:
[0012] The wiring layer in the light-emitting diode (LED) package of the present invention includes a first wiring layer, a second wiring layer, and a third wiring layer stacked sequentially. The third wiring layer covers the surface of the second wiring layer and the sidewalls of the first and second wiring layers, forming a continuous structure with the first wiring layer to encapsulate the second wiring layer. The first wiring layer serves as an adhesion layer, increasing the adhesion stability with the electrode structure and connection layer of the light-emitting unit. The second wiring layer contains a Cu layer, ensuring the conductivity of the wiring layer. The third wiring layer contains a Ni layer. The third wiring layer and the first wiring layer encapsulate the second wiring layer containing the Cu layer, thus preventing Cu from migrating outwards from the second wiring layer. This avoids problems such as short circuits or decreased conductivity caused by Cu migration, which helps to ensure the electrical performance of the LED package and improve its stability and reliability. Attached Figure Description
[0013] Figure 1 The diagram shown is a structural schematic of a light-emitting element package in the prior art.
[0014] Figure 2 The diagram shown is a top view of the light-emitting diode package provided in Embodiment 1 of this application.
[0015] Figure 3 Displayed as along Figure 2 The diagram shows a cross-sectional structure of line L1-L1.
[0016] Figure 4 Displayed as along Figure 2 The diagram shows a cross-sectional structure of line L2-L2.
[0017] Figure 5 Displayed as along Figure 3 A top-down view of the structure of the middle wiring layer.
[0018] Figure 6 Displayed as Figure 2 A schematic diagram of the structure of the first light-emitting unit.
[0019] Figure 7 The diagram shown is a structural schematic of the light-emitting diode package provided in Embodiment 2 of this application.
[0020] Figure 8The diagram shown is a structural schematic of the light-emitting diode package provided in Embodiment 3 of this application.
[0021] Figure 9 The diagram shown is a structural schematic of the light-emitting diode package provided in Embodiment 4 of this application.
[0022] Figure 10 Displayed as Figure 9 The diagram shows a top view of the LED package.
[0023] Figure 11 The diagram shown is a planar structural schematic of the light-emitting device provided in Embodiment 5 of the present invention.
[0024] Figure 12 Displayed as along Figure 11 A schematic diagram of the cross-sectional structure of AA.
[0025] Figure Labels
[0026] 10. Transparent substrate; 11. Light-emitting element; 11-1. First electrode; 11-2. Second electrode; 12. Black adhesive layer; 13. Circuit layer; 14. Lead-out electrode.
[0027] 100. Light-emitting diode package; 101. Support layer; 1011. First surface; 1012. Second surface; 102. Adhesive layer; 103. Filler layer; 104. Light-emitting unit; 1041. First light-emitting unit; 1042. Second light-emitting unit; 1043. Third light-emitting unit; 104-1. First electrode; 104-2. Second electrode; 105. Wiring layer; 1051. First wiring layer; 1052. Second wiring layer; 1053. Third wiring layer; 1054. First end; 1055. Second end; 151. First portion; 152. Second portion; 1521. First sub-block; 1522. Second sub-block; 1523. Third sub-block; 106. Insulating layer; 107. Soldering area; 1071. First solder pad; 1072. Second solder pad; 1073. Third solder pad; 1074. Fourth solder pad.
[0028] 10401, First conductivity type semiconductor layer; 10402, Active layer; 10403, Second conductivity type semiconductor layer; 10404, Transparent conductive layer; 10405, Insulating protective layer; 10406, Reflective layer; 141, First sidewall; 142, Second sidewall; 1410, Mesa structure.
[0029] 200, Light-emitting device; 201, Circuit board; 202, Light-emitting body; 203, Circuit layer; 204, Housing; 205, Solder pad. Detailed Implementation
[0030] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0031] like Figure 1 As shown, a conventional light-emitting element package includes a transparent substrate 10 and a light-emitting element 11 located above the transparent substrate 10. A black adhesive layer 12 is formed between the light-emitting elements 11 above the transparent substrate 10, and a circuit layer 13 is formed above the black adhesive layer 12. The circuit layer 13 electrically connects the first electrode 11-1 and the second electrode 11-2 of the light-emitting element 11 and forms lead-out electrodes 14. The surface metal material of the circuit layer 13 is usually Cu. Under certain environments, such as high temperature and high heat environments, Cu is prone to ion migration, which affects the electrical properties of the product. For example, short circuits may occur, or the conductivity of the circuit layer 13 may decrease, thereby affecting the electrical yield and reliability of the package. To address this problem, this application provides a light-emitting diode package and a light-emitting device, which will be described in detail through the following embodiments.
[0032] In one aspect, the present invention provides a light-emitting diode package, comprising:
[0033] The support layer has a first surface and a second surface that are disposed opposite to each other;
[0034] Multiple light-emitting units are spaced apart on the first surface of the support layer. Each light-emitting unit includes a first electrode and a second electrode spaced apart. In the light-emitting unit, the side where the first electrode and the second electrode are located is the electrode side, and the side opposite to the electrode side is the light-emitting side.
[0035] A connecting layer is located above the first surface of the support layer;
[0036] A wiring layer is located above the light-emitting unit and the connection layer and is electrically connected to the first electrode and the second electrode, respectively. Along the direction away from the support layer, the wiring layer includes a first wiring layer, a second wiring layer and a third wiring layer stacked in sequence. The third wiring layer covers the surface of the second wiring layer and the sidewalls of the first wiring layer and the second wiring layer, and wraps the second wiring layer with the first wiring layer.
[0037] As described above, the first wiring layer, as an adhesion layer, can increase the adhesion stability with the electrode structure and connection layer of the light-emitting unit. The second wiring layer contains a Cu layer, which can ensure the conductivity of the wiring layer. The third wiring layer contains a Ni layer. The third wiring layer and the first wiring layer encapsulate the second wiring layer containing the Cu layer, thus preventing the Cu in the second wiring layer from migrating out of the wiring layer. Therefore, it can avoid problems such as short circuits or decreased conductivity caused by Cu migration, which is beneficial to ensuring the electrical performance of the light-emitting diode package and improving its stability and reliability.
[0038] Optionally, the first wiring layer is located on the upper surfaces of the first electrode and the second electrode, as well as on the sidewalls of the remaining sidewalls except for the opposing sidewalls of the first electrode and the second electrode, and extends to the surface of the light-emitting unit and a portion of the surface of the connecting layer; the second wiring layer covers the first wiring layer, and the end of the second wiring layer does not exceed the end of the first wiring layer; the third wiring layer covers the upper surface of the second wiring layer and the sidewalls of the first wiring layer and the second wiring layer.
[0039] Optionally, on the side opposite to the first electrode and the second electrode, the third wiring layer extends to cover the sidewall of the first electrode and the second electrode.
[0040] Optionally, on the side opposite to the first electrode and the second electrode, the end of the second wiring layer has a gap region relative to the end of the first wiring layer, and the third wiring layer covers the gap region.
[0041] The arrangement of each layer in the wiring layer ensures that the second wiring layer containing Cu is surrounded by the first and third wiring layers. The first and third wiring layers can prevent Cu migration, thereby ensuring the conductivity stability and reliability of the entire wiring layer.
[0042] Optionally, the thickness of the first wiring layer is between 0.01 μm and 0.5 μm or between 0.5 and 1 μm.
[0043] Optionally, the thickness of the second wiring layer is between 0.1 μm and 0.5 μm or between 0.5 and 2 μm.
[0044] Optionally, the thickness of the third wiring layer is between 0.1 μm and 2 μm or between 2 μm and 3 μm.
[0045] The thickness of each layer in the wiring layer ensures the functional integrity of each layer. For example, the first wiring layer achieves good adhesion, the second wiring layer achieves good conductivity, and the third wiring layer effectively blocks Cu ion migration. On the other hand, it ensures that the overall thickness of the wiring layer is not too thick, which helps to ensure the overall size of the package.
[0046] Optionally, the first wiring layer includes a Ti layer, the second wiring layer includes a Cu layer, and the third wiring layer includes a Ni layer.
[0047] The first wiring layer contains a Ti layer, which directly contacts the electrodes of the light-emitting unit, forming a good electrical connection and exhibiting good adhesion. This improves the electrical and structural stability between the wiring layer and the light-emitting unit, increasing their reliability. The Cu layer ensures good conductivity of the second wiring layer and allows for good contact with the first wiring layer, while also contributing to cost savings. The Ni layer provides good stability and effectively prevents Cu migration, ensuring the conductive stability of the wiring layer.
[0048] Optionally, the first wiring layer and the third wiring layer are continuous.
[0049] The continuity of the first and third wiring layers can further enhance the wrapping effect on the second wiring layer, thereby improving the inhibition of Cu migration.
[0050] Optionally, the light-emitting diode package further includes:
[0051] Soldering zones are spaced apart above the wiring layer, and each soldering zone is electrically connected to the wiring layer.
[0052] An insulating layer, located above the wiring layer, covers the wiring layer and the connection layer outside the soldering area, and the insulating layer also fills between the first electrode and the second electrode of the light-emitting unit.
[0053] The soldering area enables electrical connection between each LED and the external circuit. The insulating layer isolates and insulates the soldering areas from each other, ensuring the electrical yield of the package and each LED unit.
[0054] Optionally, the welding area includes a Ni layer and a Cu layer.
[0055] Optionally, the thickness of the Ni layer in the soldering area is greater than the thickness of the Ni layer in the third wiring layer.
[0056] The Ni layer in the welding zone can also prevent Cu migration, and the Cu layer can ensure good conductivity of the welding zone.
[0057] Optionally, the welding area further includes a protective layer on the surface, which is an Au layer or an organic protective layer.
[0058] The aforementioned protective layer in the welding area has good environmental stability and is not easily damaged. Therefore, it can ensure the integrity and electrical yield of the welding area, which is conducive to improving the overall yield and reliability of the package.
[0059] Optionally, the plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit arranged sequentially along a first direction, and a first electrode and a second electrode of each light-emitting unit are spaced apart in a second direction, wherein the first direction and the second direction intersect; the wiring layer includes a first part and a second part, wherein the first part is electrically connected to the first electrode of the first light-emitting unit, the second light-emitting unit, and the first electrode of the third light-emitting unit, and the second part includes a first sub-block, a second sub-block, and a third sub-block, wherein the first sub-block is electrically connected to the second electrode of the first light-emitting unit, the second sub-block is electrically connected to the second electrode of the second light-emitting unit, and the third sub-block is electrically connected to the second electrode of the third light-emitting unit.
[0060] The first electrode of each light-emitting unit is connected in series in the first part of the wiring layer, so that the first part serves as a common electrode; each of the individual blocks in the second part is electrically connected to the second electrode of each light-emitting unit. The above configuration enables individual control of each light-emitting diode and also helps to reduce the size of the package.
[0061] Optionally, there is a gap between the edge of the wiring layer and the edge of the connection layer, and the insulating layer is formed to the edge region of the connection layer not covered by the wiring layer.
[0062] The aforementioned design of the insulating layer and wiring layer ensures that the conductive parts such as the wiring layer and soldering area in the package are surrounded by the insulating layer, and there are no exposed conductive parts on the sidewalls of the package. This achieves insulation protection for the conductive parts and improves the reliability of the package.
[0063] Optionally, the connection layer includes:
[0064] A filling layer is located above the first surface of the support layer and fills the spaces between the light-emitting units;
[0065] An adhesive layer is located between the light-emitting unit and the support layer to fix the light-emitting unit to the support layer.
[0066] Optionally, the support layer includes a transparent layer.
[0067] The connection layer and the support layer can ensure that the light-emitting unit is stably fixed above the support while ensuring the light emission effect of the package.
[0068] Optionally, the light-emitting unit includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. The side of the second conductivity type semiconductor layer away from the active layer is the light-emitting side of the light-emitting unit, and the light-emitting unit is fixed to the support layer from the light-emitting side. The side of the first conductivity type semiconductor layer away from the active layer has a reflective layer.
[0069] Optionally, the minimum single-side length of the light-emitting unit is between 1 μm and 100 μm.
[0070] Optionally, the distance between the opposite sides of the first electrode and the second electrode of the light-emitting unit is between 0.5 μm and 5 μm or between 5 μm and 20 μm.
[0071] For packages with small-sized chips and a small gap between the two electrodes of the light-emitting unit, the wiring layer design in this application can ensure that there will be no short circuits or line failures caused by Cu migration, thus ensuring the yield of the package.
[0072] A second aspect of the present invention provides a light-emitting device, which includes a circuit board and a plurality of light-emitting elements fixed to the circuit board, the light-emitting elements including the light-emitting diode package provided in this application.
[0073] The light-emitting device of the present invention includes the light-emitting diode package provided in this application, and therefore the light-emitting device has good electrical yield and reliability.
[0074] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this invention, and the layout of the components may also be more complex.
[0075] Example 1
[0076] This embodiment provides a light-emitting diode package, such as Figures 2 to 5 As shown, the light-emitting diode package 100 of this embodiment includes a support layer 101, a plurality of light-emitting units 104, and a wiring layer 105. The support layer 101 has a first surface 1011 and a second surface 1012 disposed opposite to each other, and the plurality of light-emitting units 104 are fixedly arranged on the first surface 1011 of the support layer 101. Figure 3 and Figure 4 As shown, a connecting layer is provided between the plurality of light-emitting units 104 and the support layer 101. The connecting layer includes an adhesive layer 102 and a filler layer 103. The adhesive layer 102 adheres and fixes the plurality of light-emitting units 104 to the support layer 101. The first surface 1011 side of the support layer 101 is used to fix the light-emitting units 104 and form each functional component, and the second surface 1012 side serves as the light-emitting side of the package.
[0077] To avoid affecting or further improve the light emission performance of the package, in this embodiment, the support layer 101 is a transparent layer. In optional embodiments, the support layer 101 can be selected from inorganic light-transmitting materials such as glass, transparent ceramics, or sapphire. To facilitate use by the client while ensuring good light emission performance of the LED package 100, the thickness of the support layer 101 is preferably greater than 10 μm, specifically preferably 30 μm–50 μm, 50 μm–100 μm, or 100 μm–300 μm.
[0078] In an optional embodiment, the light-emitting unit 104 mainly refers to a micron-sized light-emitting diode, with a single-side length between 1μm and 100μm, such as 2μm to 5μm, 5μm to 10μm, 10μm to 20μm, 20μm to 50μm, or 50μm to 100μm, and a thickness ranging from 2μm to 15μm, preferably 5μm to 10μm. In this embodiment, the light-emitting diode package 100 includes a first direction (i.e., Figure 2 A first light-emitting unit 1041, a second light-emitting unit 1042, and a third light-emitting unit 1043 are spaced apart along the Y-direction. The first light-emitting unit 1041 can be a red light chip, the second light-emitting unit 1042 can be a green light chip, and the third light-emitting unit 1043 can be a blue light chip. The light-emitting units 104 are formed as RGB tri-pixels. Optionally, the thickness difference between the light-emitting units 104 is less than or equal to 5 μm, which can effectively improve the transfer yield of the light-emitting units 104 onto the support layer 101, thereby improving the light emission effect of the package.
[0079] Each of the above-mentioned light-emitting units 104 includes a light-emitting epitaxial layer. Taking the first light-emitting unit 1041 as an example, refer to... Figure 6 An insulating protective layer 10405 located above the epitaxial layer, and an electrode structure formed above the insulating protective layer 10405.
[0080] like Figure 6As shown, the light-emitting epitaxial layer includes a first conductivity type semiconductor layer 10401, an active layer 10402, and a second conductivity type semiconductor layer 10403 stacked sequentially. The first conductivity type semiconductor layer 10401, the active layer 10402, and the second conductivity type semiconductor layer 10403 may include Ш-V nitride semiconductors, such as nitride semiconductors like Al, Ga, and In. The first conductivity type semiconductor layer 10401 may include n-type impurities (e.g., Si, Ge, Sn), and the second conductivity type semiconductor layer 10403 may include p-type impurities (e.g., Mg, Sr, Ba). It is understood that the dopants of the first conductivity type semiconductor layer 10401 and the second conductivity type semiconductor layer 10403 may also be the opposite of those described above. The active layer 10402 may include a multiple quantum well (MQW) structure, and by adjusting the composition ratio of the nitride semiconductors, the active layer 10402 can emit a desired wavelength. Optionally, the light-emitting unit 104 may include structures with other optimized functions. The side of the light-emitting epitaxial layer opposite to the first electrode 104-1 and the second electrode 104-2 is the light-emitting side of the light-emitting unit 104. Figure 6 Taking the first light-emitting unit 1041 shown as an example, the side of the first conductivity type semiconductor layer 10401 away from the active layer 10402 is the light-emitting side of the first light-emitting unit 1041. To increase light extraction efficiency, the surface of this light-emitting side can be formed as... Figure 6 The roughened surface is shown.
[0081] Still refer to Figure 6The first light-emitting unit 1041 has a mesa structure 1410 formed on its light-emitting epitaxial layer. This mesa structure 1410 is formed at the edge region or a corner of the light-emitting epitaxial layer, and is formed by sequentially etching the second conductivity type semiconductor layer 10403 and the active layer 10402 to expose the first conductivity type semiconductor layer 10401, or by further etching a portion of the first conductivity type semiconductor layer 10401. An insulating protective layer 10405 covers the exposed sidewalls of the light-emitting epitaxial layer, the surface of the exposed second conductivity type semiconductor layer 10403, and the surface of the first conductivity type semiconductor layer 10401 exposed at the mesa structure 10410. To satisfy the electrical insulation and physical protection functions of the insulating protective layer 10405, its thickness is typically set to 0.1 μm to 2 μm, and more specifically, 1 μm to 1.5 μm. To enable the first light-emitting unit 1041 to emit light from the light-emitting side, a reflective layer 10406 is formed above the insulating protective layer 10405. This reflective layer 10406 can be, for example, a DBR structure formed by alternating layers of two materials with different refractive indices, such as a DBR structure formed by alternating stacks of SiO2 / TiO2 (or Ti3O5). To enhance the reflection effect, the reflective layer 10406 typically includes 15 to 30 pairs of SiO2 / TiO2 material layers. The thickness of the reflective layer 10406 is typically between 0.1 μm and 10 μm, further between 1 μm and 6 μm, and even further between 2 μm and 4 μm.
[0082] Similarly, Figure 6 As shown, the electrode structure formed above the insulating protective layer 10405 includes a first electrode 104-1 and a second electrode 104-2. The first electrode 104-1 is electrically connected to the aforementioned first conductive type semiconductor layer 10401, and the second electrode 104-2 is electrically connected to the aforementioned second conductive type semiconductor layer 10403. Specifically, the first electrode 104-1 is formed above the mesa structure 10410, penetrating the insulating protective layer 10405 and the reflective layer 10406 above the mesa structure 10410 and is electrically connected to the first conductive type semiconductor layer 10401. The second electrode 104-2 is formed above the second conductive type semiconductor layer 10403, penetrating the insulating protective layer 10405 and the reflective layer 10406 above the second conductive type semiconductor layer 10403 and is electrically connected to the second conductive type semiconductor layer 10403. In order to increase the lateral extension of the current on one side of the second conductivity type semiconductor layer 10403, a transparent conductive layer 10404 (e.g., an ITO layer) is formed above the second conductivity type semiconductor layer 10403. The second electrode 104-2 is connected to the transparent conductive layer 10404 to achieve electrical connection with the second conductivity type semiconductor layer 10403.
[0083] Refer again Figure 3 and Figure 4The adhesive layer 102 adheres the light-emitting unit 104 to the support layer 101 via the light-emitting side of the self-emissive unit 104. The first electrode 104-1 and the second electrode 104-2 of each light-emitting unit 104 face away from the support layer 101. To avoid affecting the light emission effect of the bonded light-emitting unit 104, the adhesive layer 102 is also a transparent material layer. The adhesive layer 102 can completely cover the entire first surface 1011 of the support layer 101, or it can be located only in the area below the light-emitting unit 104, allowing the light-emitting unit 104 to adhere to the support layer 101 through the adhesive layer 102. Different light-emitting units 104 typically have different thicknesses. By setting the adhesive layer 102, the height difference of the light-emitting surfaces of each light-emitting unit 104 can be reduced, allowing the light emitted from the side of the self-emissive unit 104 to be absorbed by the filling layer 103 as much as possible, thereby improving the contrast of the light-emitting module. To ensure that the alignment accuracy of each light-emitting unit 104 is not affected, the thickness of the adhesive layer 102 is preferably 1μm to 15μm or 3μm to 10μm.
[0084] Optionally, the filling layer 103 is located above the first surface 1011 of the support layer 101, and more specifically, fills the space between each light-emitting unit 104.
[0085] In an optional example, the filling layer 103 can be a light-absorbing material layer such as black glue to absorb the light radiated by each light-emitting unit 104 and prevent light crosstalk between adjacent light-emitting units 104 (e.g., color mixing or light interference). Optionally, the filling layer 103 can be a component formed by dispersing black filler components with a particle size of no more than 1 μm in transparent or translucent materials such as silicone, epoxy resin, polyimide, low-temperature glass, polysiloxane, and polysilazane. The black filler components in the filling layer 103 include, but are not limited to, carbon black, titanium nitride, iron oxide, magnetite, and iron powder. In another optional example, the filling layer 103 can be a transparent material layer with good reflectivity, which can reflect the light emitted by the light-emitting unit 104 and allow it to exit from the support layer 101.
[0086] In an optional example, the height of the filling layer 103 does not exceed the height of the reflective layer 10406 of the light-emitting unit 104. Furthermore, the height of the filling layer 103 is higher than the height of the active layer 10402 in the light-emitting unit 104 but does not exceed the height of the reflective layer 10406 of the light-emitting unit 104, to prevent color mixing or light interference between adjacent light-emitting units 104, thereby improving the contrast of the light-emitting module. Therefore, in this embodiment, the filling layer 103 is not formed on the surface of the light-emitting unit 104, and the surface of the light-emitting unit 104 away from the support layer 101, as well as the first electrode 104-1 and the second electrode 104-2, are exposed outside the filling layer 103.
[0087] The wiring layer 105 is located above the light-emitting unit 104; specifically, the wiring layer 105 is located above the light-emitting unit 104 and above the filling layer 103. For example... Figures 2 to 5 As shown, the wiring layer 105 includes a first portion 151 and a second portion 152 that are mutually insulated from each other. The first portion 151 is electrically connected to the first electrode 104-1 of each light-emitting unit 104, serving as the common electrode of the first electrodes 104-1 of the plurality of light-emitting units 104. The second portion 152 is electrically connected to the first electrodes 104-1 of the plurality of light-emitting units 104. Specifically, the second portion 152 includes a first sub-block 1521, a second sub-block 1522, and a third sub-block 1523 that are spaced apart from each other and insulated from each other. The first sub-block 1521 is electrically connected to the second electrode 104-2 of the first light-emitting unit 1041, the second sub-block 1522 is electrically connected to the second electrode 104-2 of the second light-emitting unit 1042, and the third sub-block 1523 is electrically connected to the second electrode 104-2 of the third light-emitting unit 1043.
[0088] like Figure 2 As shown, the first light-emitting unit 1041, the second light-emitting unit 1042, and the third light-emitting unit 1043 are along the first direction (i.e., Figure 2 The first electrode 104-1 and the second electrode 104-2 of each light-emitting unit 104 are arranged sequentially at intervals along the second direction (i.e., the Y direction shown). Figure 2 The light-emitting unit 104 is disposed above each light-emitting unit 104 in an insulated manner (as shown in the X direction). With the centerline of the package in the first direction as the boundary, the first electrodes 104-1 of the first light-emitting unit 1041 and the second light-emitting unit 1042 are located on the same side along the second direction, while the first electrode 104-1 of the third light-emitting unit 1043 is located on the opposite side along the second direction. A first portion 151 of the wiring layer 105 is electrically connected to the first electrodes 104-1 of each light-emitting unit and maintains a certain distance from the second electrodes 104-2 of each light-emitting unit to ensure mutual insulation.
[0089] In optional embodiments, the wiring layer 105 can be a single-layer structure or a multi-layer structure. For example, it can be a single-layer structure formed of a single metal material or a multi-layer structure formed of multiple metal materials. The thickness of the wiring layer 105 is between 1μm and 5μm, for example, it can be 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 5μm, etc. Further optionally, the wiring layer 105 is a multi-layer structure, such as... Figure 3 and Figure 4 As shown, specifically, this includes the direction away from the support layer 101 ( Figure 3 and Figure 4A first wiring layer 1051, a second wiring layer 1052, and a third wiring layer 1053 are stacked sequentially in the Z-direction. The first wiring layer 1051, which is in direct contact with the first electrode 104-1 and the second electrode 104-2, includes at least a Ti layer. The second wiring layer 1052, located above the first wiring layer 1051, includes at least a Cu layer. The third wiring layer 1053 includes a Ni layer, and may also include one or more layers of Al, Ti, Ta, TiN, or TaN. The thickness of the first wiring layer 1051 is between 0.05 μm and 0.5 μm or between 0.5 μm and 1 μm; the thickness of the second wiring layer 1052 is between 0.1 μm and 0.5 μm or between 0.5 μm and 2 μm; and the thickness of the third wiring layer 1053 is between 0.1 μm and 2 μm or between 2 μm and 3 μm. The aforementioned Ti layer increases the adhesion between the wiring layer 105 and the first electrode 104-1 and the second electrode 104-2, improving the reliability and yield of the electrical connection. The aforementioned Cu layer provides good electrical connection while saving costs. The Ni layer effectively blocks Cu migration. The thickness settings of each layer in the wiring layer 105 ensure the functional integrity of each layer; for example, the first wiring layer 1051 achieves good adhesion, the second wiring layer 1052 achieves good conductivity, and the third wiring layer effectively blocks Cu ion migration. On the other hand, it ensures that the overall thickness of the wiring layer is not too thick, which helps to ensure the overall size of the package and can adapt to products with different size requirements.
[0090] Refer again Figure 3 and Figure 4For ease of description, the following definitions are made in this embodiment: the two opposite sidewalls of the first electrode 104-1 and the second electrode 104-2 are respectively the first sidewall 141 and the second sidewall 142; the end of the wiring layer 105 near the first sidewall 141 or the second sidewall 142 is the first end 1054, and the other end opposite the first end 1054 is the second end 1055. The above definitions are merely exemplary and are not intended to be limiting. In the wiring layer 105, the first wiring layer 1051 is located on the upper surface of the first electrode 104-1 and the second electrode 104-2, and on the sidewalls of the remaining sidewalls other than the first sidewalls 141 and the second sidewall 142 of the first electrode 104-1 and the second electrode 104-2, and extends to the surface of the light-emitting unit 104 and part of the surface of the connecting layer (specifically the filling layer 103). The second wiring layer 1052 covers the first wiring layer 1051, and the end of the second wiring layer 1052 does not exceed the end of the first wiring layer 1051. Specifically, in this embodiment, at the first end 1054 and the second end 1055 of the wiring layer 105, the first wiring layer 1051 and the second wiring layer 1052 are flush, and the third wiring layer 1053 covers the upper surface of the second wiring layer 1052 and the sidewalls of the first wiring layer 1051 and the second wiring layer 1052. The third wiring layer 1053 covers the surface of the second wiring layer 1052 and the sidewalls of the first wiring layer 1051 and the second wiring layer 1052, forming a continuous structure with the first wiring layer 1051 to enclose the second wiring layer 1052.
[0091] The second wiring layer 1052 in wiring layer 105 contains a Cu layer. When the light-emitting unit 104 operates, it generates a large amount of heat. Under this high-temperature environment, Cu is prone to ion migration, affecting the electrical properties of the product. As mentioned above, the minimum single-side length of the light-emitting unit 104 is between 1 μm and 100 μm. Optionally, such as... Figure 6 As shown, the spacing D between the first sidewall 141 and the second sidewall 142 of the first electrode 104-1 and the second electrode 104-2 is between 0.5μm and 5μm or between 5μm and 20μm, and more specifically, between 0.5μm and 3μm or between 5μm and 10μm. Because the spacing D is relatively small, electrical performance instability issues such as short circuits caused by Cu migration are highly likely to occur. The aforementioned arrangement of the third wiring layer 1053 ensures that the second wiring layer 1052 containing the Cu layer in the wiring layer 105 is completely enclosed by the first wiring layer 1051 and the third wiring layer 1053, preventing direct contact with the light-emitting unit 104 and other structures. Therefore, it effectively prevents electrical performance instability issues caused by Cu migration. Especially for small-sized chips and packages with small spacing between the two electrodes of the light-emitting unit, the wiring layer design in this application ensures that short circuits or circuit failures will not occur due to Cu migration, thus guaranteeing the yield of the package.
[0092] Reference Figure 2 , Figure 4 and Figure 5 In addition to the first sidewall 141 and the second sidewall 142, the third wiring layer 1053 in the wiring layer 105 covers at least a portion of the remaining sidewalls. Preferably, the third wiring layer 1053 covers all sidewalls of the first electrode 104-1 and the second electrode 104-2. When the third wiring layer 1053 covers all sidewalls of the first electrode 104-1 and the second electrode 104-2, it blocks all channels for Cu migration along the first electrode 104-1 and the second electrode 104-2, which can more effectively prevent Cu migration and ensure the stability of the electrical performance of the package.
[0093] Refer again Figures 2 to 4 As shown, an insulating layer 106 is formed above the wiring layer 105. This insulating layer 106 is an insulating material layer, such as one or more combinations of inorganic insulating materials like silicon oxide, silicon nitride, and silicon oxynitride, or it can be an organic insulating material like resin. The thickness of the insulating layer 106 is between 2μm and 20μm, allowing it to effectively protect the wiring layer 105. Figure 2 The insulating layer 106 shown partially covers the wiring layer 105, and a soldering area 107 is formed above the exposed wiring layer 105, which leads out the wiring layer 105. The soldering area 107 includes a first solder pad 1071 formed above a portion of the first portion 151 of the wiring layer 105, a second solder pad 1071 formed above a portion of the first sub-block 1521 of the second portion 152 of the wiring layer 105, a third solder pad 1073 formed above a portion of the second sub-block 1522, and a fourth solder pad 1074 formed above a portion of the third sub-block 1523.
[0094] The aforementioned welding area 107 can be a single-layer structure or a multi-layer structure. In this embodiment, the welding area 107 is formed as a multi-layer structure, and it includes at least a Ni layer. Optionally, the welding area 107 can be, for example, a Ti\Cu\Ni\Au multi-layer structure. For example, the Ti layer is located at the bottom layer and connected to the wiring layer 105 to increase adhesion to the wiring layer 105 and improve the stability of both; the Cu layer is located above the Ti layer to ensure good conductivity of the welding area 107; the Ni layer is located above the Cu layer, and the Au layer is located on the surface, serving as a protective layer. Furthermore, the thickness of the Ni layer in the welding area 107 is greater than the thickness of the Ni layer in the wiring layer 105, which can more effectively prevent Cu migration in the welding area 107.
[0095] In an optional example, the soldering area 107 is provided with a protective layer, which may be a metal layer, such as the Au layer described above, or an OSP (Organic Solderability Protective Layer). This protective layer effectively protects the soldering area 107 from corrosion damage, effectively protects the integrity and electrical reliability of the soldering area 107 of the wiring layer 105, and does not interfere with the electrical connection during subsequent soldering, thus improving the reliability of the LED package 100.
[0096] like Figure 2 As shown, the first solder pad 1071, the second solder pad 1072, the third solder pad 1073 and the fourth solder pad 1074 are arranged at intervals between each other and are formed at the four corners of the light-emitting diode package 100. The insulating layer 106 is arranged around the soldering area 107 to better protect the soldering area 107.
[0097] Example 2
[0098] This embodiment also provides a light-emitting diode package, which can be referred to again. Figure 2 and combined Figure 7 The LED package 100 in this embodiment also includes a support layer 101, a plurality of light-emitting units 104, and a wiring layer 105. The support layer 101 has a first surface 1011 and a second surface 1012 disposed opposite to each other, and the plurality of light-emitting units 104 are fixedly arranged on the first surface 1011 of the support layer 101. Figure 7 As shown, an adhesive layer 102 is provided between the plurality of light-emitting units 104 and the support layer 101, and the adhesive layer 102 adheres and fixes the plurality of light-emitting units 104 to the support layer 101. The first surface 1011 side of the support layer 101 is used to fix the light-emitting units 104 and form each functional component, and the second surface 1012 side serves as the light-emitting side of the package.
[0099] Unlike the other embodiments, as Figure 7As shown, in the LED package 100 of this embodiment, at the first end 1054 of the wiring layer 105, the end of the first wiring layer 1051 is flush with the first sidewall 141 of the first electrode 104-1 (or the second sidewall 142 of the second electrode 104-2). There is a gap between the end of the second wiring layer 1052 and the end of the first wiring layer 1051, meaning that the second wiring layer 1052 does not completely cover the edge of the first end 1054 of the first wiring layer 1051. The third wiring layer 1053 covers the surface and sidewalls of the second wiring layer 1052, as well as the surface and sidewalls of the first wiring layer 1051 that are not covered by the second wiring layer 1052. The above-described configuration in this embodiment reduces the second wiring layer 1052 containing the Cu layer, making the migration path of Cu ions in the second wiring layer 1052 longer, which increases the difficulty of their migration; at the same time, the second wiring layer 1052 is completely wrapped by the first wiring layer 1051 and the third wiring layer 1053, further preventing the migration of Cu ions and ensuring the conductivity stability of the wiring layer.
[0100] Example 3
[0101] This embodiment also provides a light-emitting diode package, which can be referred to again. Figure 2 and combined Figure 8 The LED package 100 in this embodiment also includes a support layer 101, a plurality of light-emitting units 104, and a wiring layer 105. The support layer 101 has a first surface 1011 and a second surface 1012 disposed opposite to each other, and the plurality of light-emitting units 104 are fixedly arranged on the first surface 1011 of the support layer 101. Figure 8 As shown, an adhesive layer 102 is provided between the plurality of light-emitting units 104 and the support layer 101, and the adhesive layer 102 adheres and fixes the plurality of light-emitting units 104 to the support layer 101. The first surface 1011 side of the support layer 101 is used to fix the light-emitting units 104 and form each functional component, and the second surface 1012 side serves as the light-emitting side of the package.
[0102] Unlike the other embodiments, as Figure 8As shown, in the LED package 100 of this embodiment, at the first end 1054 of the wiring layer 105, the end of the first wiring layer 1051 is flush with the first sidewall 141 of the first electrode 104-1 (or the second sidewall 142 of the second electrode 104-2). There is a gap between the end of the second wiring layer 1052 and the end of the first wiring layer 1051, meaning the second wiring layer 1052 does not completely cover the edge of the first end 1054 of the first wiring layer 1051. Similarly, at the second end 1055 of the wiring layer 105, there is also a gap between the end of the second wiring layer 1052 and the end of the first wiring layer 1051, meaning the second wiring layer 1052 does not completely cover the edge of the second end 1055 of the first wiring layer 1051.
[0103] The third wiring layer 1053 covers the surface and sidewalls of the second wiring layer 1052, as well as the surface and sidewalls of the first wiring layer 1051, which is not covered by the second wiring layer 1052. This configuration in the embodiment reduces the size of the second wiring layer 1052 containing the Cu layer, thus lengthening the migration path of Cu ions in the second wiring layer 1052 and increasing the difficulty of their migration. Simultaneously, it ensures that the second wiring layer 1052 is completely enclosed by the first wiring layer 1051 and the third wiring layer 1053, further preventing Cu ion migration and guaranteeing the conductivity stability of the wiring layer.
[0104] Example 4
[0105] This embodiment also provides a light-emitting diode package, which can be referred to again. Figure 2 and combined Figure 9 and Figure 10 The LED package 100 in this embodiment also includes a support layer 101, a plurality of light-emitting units 104, and a wiring layer 105. The support layer 101 has a first surface 1011 and a second surface 1012 disposed opposite to each other, and the plurality of light-emitting units 104 are fixedly arranged on the first surface 1011 of the support layer 101. Figure 9 and Figure 10 As shown, an adhesive layer 102 is provided between the plurality of light-emitting units 104 and the support layer 101, and the adhesive layer 102 adheres and fixes the plurality of light-emitting units 104 to the support layer 101. The first surface 1011 side of the support layer 101 is used to fix the light-emitting units 104 and form each functional component, and the second surface 1012 side serves as the light-emitting side of the package.
[0106] Unlike the other embodiments, as Figure 9 and Figure 10As shown, in the LED package 100 of this embodiment, the first solder pad 1071, the second solder pad 1072, the third solder pad 1073, and the fourth solder pad 1074 are spaced apart from each other and formed at the four corners of the LED package 100. An insulating layer 106 is formed in the middle region of the LED package 100 between the solder pads, and is formed in a cross shape. That is, as shown... Figure 9 and Figure 10 As shown, the above-mentioned pad areas form a semi-open structure, which facilitates subsequent welding and other steps.
[0107] Example 5
[0108] This embodiment provides a semiconductor light-emitting device, such as... Figure 11 and Figure 12 As shown, the light-emitting device 200 includes a circuit board 201 and a plurality of light-emitting elements 202 electrically connected to the circuit board 201. In this embodiment, the light-emitting elements 202 are semiconductor light-emitting elements provided in Embodiment 1. Similarly, as... Figure 12 As shown, the circuit board 210 has several sets of pads 205. The soldering area of each light-emitting element 202 is electrically connected to a set of pads 205. Additionally, a circuit layer 203 is provided in the circuit board 201, and the light-emitting element 202 is electrically connected to the circuit layer 203 via the pads 205. Figure 11 and Figure 12 As shown, the light-emitting device 200 may also include a housing 204 to protect the light-emitting element from external contamination or damage, while not affecting the light emission effect of the light-emitting element. The aforementioned configuration of the wiring layer and soldering area of the light-emitting diode package in this application can also improve the conductivity reliability and stability of the light-emitting device.
[0109] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A light-emitting diode package, characterized in that, include: The support layer has a first surface and a second surface that are disposed opposite to each other; Multiple light-emitting units are spaced apart on the first surface of the support layer. Each light-emitting unit includes a first electrode and a second electrode spaced apart. In the light-emitting unit, the side where the first electrode and the second electrode are located is the electrode side, and the side opposite to the electrode side is the light-emitting side. A connecting layer is located above the first surface of the support layer; A wiring layer is located above the light-emitting unit and the connection layer and is electrically connected to the first electrode and the second electrode, respectively. Along the direction away from the support layer, the wiring layer includes a first wiring layer, a second wiring layer and a third wiring layer stacked in sequence. The third wiring layer covers the surface of the second wiring layer and the sidewalls of the first wiring layer and the second wiring layer, and wraps the second wiring layer with the first wiring layer.
2. The light-emitting diode package according to claim 1, characterized in that, The first wiring layer is located on the upper surfaces of the first electrode and the second electrode, as well as on the sidewalls of the remaining sidewalls except for the opposing sidewalls of the first electrode and the second electrode, and extends to the surface of the light-emitting unit and a portion of the surface of the connecting layer. The second wiring layer covers the first wiring layer, and the end of the second wiring layer does not exceed the end of the first wiring layer. The third wiring layer covers the upper surface of the second wiring layer and the sidewalls of the first wiring layer and the second wiring layer.
3. The light-emitting diode package according to claim 1, characterized in that, On the side opposite to the first electrode and the second electrode, the third wiring layer extends to cover the sidewall of the first electrode and the second electrode.
4. The light-emitting diode package according to claim 1 or 2, characterized in that, On the side opposite to the first electrode and the second electrode, the end of the second wiring layer has a gap region relative to the end of the first wiring layer, and the third wiring layer covers the gap region.
5. The light-emitting diode package according to claim 1, characterized in that, The thickness of the first wiring layer is between 0.01μm and 0.5μm or between 0.5μm and 1μm.
6. The light-emitting diode package according to claim 1, characterized in that, The thickness of the second wiring layer is between 0.1μm and 0.5μm or between 0.5 and 2μm.
7. The light-emitting diode package according to claim 1, characterized in that, The thickness of the third wiring layer is between 0.1μm and 2μm or between 2μm and 3μm.
8. The light-emitting diode package according to claim 1, characterized in that, The first wiring layer contains a Ti layer, the second wiring layer contains a Cu layer, and the third wiring layer contains a Ni layer.
9. The light-emitting diode package according to claim 1, characterized in that, The first wiring layer and the third wiring layer are continuous.
10. The light-emitting diode package according to claim 8, characterized in that, Also includes: Soldering zones are spaced apart above the wiring layer, and each soldering zone is electrically connected to the wiring layer. An insulating layer, located above the wiring layer, covers the wiring layer and the connection layer outside the soldering area, and the insulating layer also fills between the first electrode and the second electrode of the light-emitting unit.
11. The light-emitting diode package according to claim 10, characterized in that, The welding zone includes a Ni layer and a Cu layer.
12. The light-emitting diode package according to claim 11, characterized in that, The thickness of the Ni layer in the soldering zone is greater than the thickness of the Ni layer in the third wiring layer.
13. The light-emitting diode package according to claim 10, characterized in that, The welding area also includes a protective layer on the surface, which is an Au layer or an organic protective layer.
14. The light-emitting diode package according to claim 1, characterized in that, The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit arranged sequentially along a first direction. The first electrode and the second electrode of each light-emitting unit are spaced apart in a second direction, wherein the first direction and the second direction intersect. The wiring layer includes a first part and a second part, wherein the first part is electrically connected to the first electrode of the first light-emitting unit, the second light-emitting unit, and the first electrode of the third light-emitting unit, and the second part includes a first sub-block, a second sub-block, and a third sub-block. The first sub-block is electrically connected to the second electrode of the first light-emitting unit, the second sub-block is electrically connected to the second electrode of the second light-emitting unit, and the third sub-block is electrically connected to the second electrode of the third light-emitting unit.
15. The light-emitting diode package according to claim 10, characterized in that, There is a gap between the edge of the wiring layer and the edge of the connection layer, and the insulating layer is formed to the edge area of the connection layer not covered by the wiring layer.
16. The light-emitting diode package according to claim 1, characterized in that, The connection layer includes: A filling layer is located above the first surface of the support layer and fills the spaces between the light-emitting units; An adhesive layer is located between the light-emitting unit and the support layer to fix the light-emitting unit to the support layer.
17. The light-emitting diode package according to claim 1, characterized in that, The support layer includes a transparent layer.
18. The light-emitting diode package according to claim 1, characterized in that, The light-emitting unit includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. The side of the second conductivity type semiconductor layer away from the active layer is the light-emitting side of the light-emitting unit, and the light-emitting unit is fixed to the support layer from the light-emitting side. The side of the first conductivity type semiconductor layer away from the active layer has a reflective layer.
19. The light-emitting diode package according to claim 1, characterized in that, The minimum single-side length of the light-emitting unit is between 1 μm and 100 μm.
20. The light-emitting diode package according to claim 1, characterized in that, The distance between the opposite sides of the first electrode and the second electrode of the light-emitting unit is between 0.5 μm and 5 μm or between 5 μm and 20 μm.
21. A light-emitting device, characterized in that, It includes a circuit board and a plurality of light-emitting elements fixed to the circuit board, wherein the light-emitting elements include the light-emitting diode package as described in any one of claims 1 to 20.