A diamond-silicon carbide composite material and a method for producing the same

By employing silicon vapor infiltration and chemical vapor infiltration processes, the problem of silicon residue in vapor-phase silicon infiltration was solved, resulting in the preparation of diamond-silicon carbide composite materials with high thermal conductivity and high strength, suitable for heat dissipation substrates and chip packaging materials for electronic devices.

CN121930016BActive Publication Date: 2026-07-03上海芯源创新中心
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Patent Information

Application Number
CN202610399842.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-03-30
Publication Date
2026-07-03
Estimated Expiration
2046-03-30

AI Technical Summary

Technical Problem

In the existing vapor-phase silicon infiltration method for preparing diamond-silicon carbide composites, mass transfer is hindered at the end of the reaction, resulting in silicon residue, which reduces the thermal conductivity and mechanical strength of the material.

Method used

A high-density silicon carbide framework is constructed by combining silicon vapor infiltration with chemical vapor infiltration. Silicon carbide is then deposited through chemical vapor infiltration to fill the pores, ensuring that the stoichiometry is close to the ideal state and avoiding silicon residue.

Benefits of technology

A diamond-silicon carbide composite material with high thermal conductivity and high mechanical strength has been developed, which meets the near-net-shape forming requirements of complex-shaped components and avoids the silicon residue problem in traditional methods.

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Abstract

This invention provides a diamond-silicon carbide composite material and its preparation method, comprising the following steps: S1, mixing graphite, diamond, silicon powder, binder, and solvent, followed by wet mixing to obtain a mixed slurry with a solid content of 70wt%~90wt%; S2, drying the mixed slurry, sieving it, and then sequentially performing molding and isostatic pressing to form a preform; S3, degreasing the preform, followed by silicon vapor infiltration treatment to obtain a diamond-silicon carbide preform; S4, subjecting the diamond-silicon carbide preform to chemical vapor infiltration to obtain the diamond-silicon carbide composite material. This invention constructs a silicon carbide framework with high density and mechanical strength in the preform through silicon vapor infiltration treatment; and achieves final densification of the diamond-silicon carbide composite material through chemical vapor infiltration, ensuring its high thermal conductivity and high mechanical strength.
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Citation Information

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