Grounding assembly, conductive contact distribution method and method for improving film uniformity

Abstract

The invention provides a grounding assembly, a conductive contact distribution method and a method for improving film uniformity. The distribution method comprises the following steps: taking the center of the grounding assembly as an original point O; determining the projections of the filter box, the matching electrode, the baffle disc and the gear box on the plane where the grounding assembly is located, and obtaining a first direction line OA, a second direction line OB and a third direction line OC; equally dividing the angle AOB to obtain a fourth direction line OD; obtaining a fifth direction line OE; and the density of the conductive contact pieces, pointing to one side, of the grounding assembly in the fifth direction line OE is larger than that of the conductive contact pieces on the other side. By setting the density of the conductive contact pieces in different areas on the grounding assembly, the chamber grounding effect is optimized, so that sputtering particles in the chamber are uniformly distributed, and the chamber process uniformity is improved; and irreversible damage to parts in the cavity due to abnormal grounding can be avoided, and the cost is saved.

Description

Technical Field

[0001] This application relates to the field of semiconductor integrated circuit technology, and in particular to a grounding component for a semiconductor device, a semiconductor device, a method for distributing conductive contacts in a semiconductor device grounding component, and a method for improving thin film uniformity. Background Technology

[0002] The high-frequency PVD (Physical Vapor Deposition) reaction chamber is equipped with isolation and grounding components. The isolation components are mainly used to isolate the chamber environment, while the grounding components are mainly used to achieve uniform grounding. Figure 1 This is a schematic diagram of the structure of a PVD reaction chamber in the prior art. Please refer to it. Figure 1 As shown, the chamber shield is mainly used to protect the sidewalls of the chamber from erosion by plasma deposits. During the process, the base rises to the process position and simultaneously drives multiple conductive contacts (or grounding sheets) in the grounding assembly to contact the chamber shield. The chamber shield achieves multi-contact equipotential by fully contacting multiple conductive contacts.

[0003] Figure 2 This is a schematic diagram of a grounding component in existing technology. Please refer to it. Figure 1 and Figure 2 As shown, the grounding assembly includes a base 11 and a plurality of conductive contacts 12 evenly disposed on the base 11. The base 11 surrounds the base of the reaction chamber. The rise of the base causes the grounding assembly to rise, so that the conductive contacts 12 on the grounding assembly come into contact with the chamber baffle.

[0004] However, the contact position of the conductive contacts and the creases that appear on the conductive contacts during long-term use can affect the local grounding effect, which in turn affects the plasma environment of the chamber during the process, causing abnormal changes in the uniformity of thin film growth, and even causing irreversible damage to key components in the chamber due to grounding abnormalities. Summary of the Invention

[0005] The purpose of this application is to provide a grounding component and a method for distributing conductive contacts, and a method for improving thin film uniformity. By adjusting the distribution of conductive contacts in the grounding component, the cavity grounding effect is optimized, the cavity process uniformity is improved, and thus the thin film uniformity is improved.

[0006] To address the aforementioned technical problems, according to a first aspect of this application, a grounding assembly for a semiconductor device is provided, comprising: a base, and a plurality of conductive contacts disposed on the base, the plurality of conductive contacts being arranged in a non-uniform distribution on the base.

[0007] Optionally, the base is annular and conductive.

[0008] Optionally, the conductive contact is a spring with elasticity, which is detachably fixed to the base.

[0009] Optionally, the material of the conductive contact may include an alloy with shape memory function.

[0010] Optionally, the grounding assembly is provided with multiple temperature control mechanisms, each corresponding to one of the conductive contacts, to individually control the temperature of each conductive contact; or / and,

[0011] The grounding assembly is provided with multiple transmission mechanisms that move in a direction perpendicular to the grounding assembly. Each transmission mechanism corresponds to a conductive contact and can individually drive each conductive contact to move.

[0012] To address the aforementioned technical problems, according to a second aspect of this application, a semiconductor device is provided, comprising a reaction chamber, a filter box and matching electrode, a baffle plate, a gearbox, and a grounding assembly as described above; wherein the filter box and matching electrode, and the gearbox are located at the top of the reaction chamber, the baffle plate is located on the side of the reaction chamber, and the grounding assembly is located inside the reaction chamber;

[0013] The projections of the filter box and matching electrode onto the plane of the grounding assembly partially overlap with the grounding assembly. The projection of the gearbox onto the plane of the grounding assembly is within the grounding assembly, and compared to the gearbox projection, the projections of the filter box and matching electrode are further away from the center of the grounding assembly. The projection of the baffle onto the plane of the grounding assembly does not overlap with the grounding assembly.

[0014] Within the grounding assembly, multiple conductive contacts are unevenly distributed on the base.

[0015] Optionally, the semiconductor device is a PVD device.

[0016] To address the aforementioned technical problems, according to a third aspect of this application, a method for distributing conductive contacts in a semiconductor device grounding assembly is provided, comprising the following steps:

[0017] Take the center of the grounding component as the origin O;

[0018] Determine the projections of the filter box and matching electrode, baffle and gearbox in the semiconductor device onto the plane where the grounding component is located, and obtain the first direction line OA pointing to the projection of the filter box and matching electrode, the second direction line OB pointing to the projection of the baffle, and the third direction line OC pointing to the projection of the gearbox, with the origin O as the starting point.

[0019] Bisect ∠AOB, and extend from the origin O at one end of the bisector to the other end to obtain the fourth direction line OD, where ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, and the area where the angle is located does not cover the third direction line OC.

[0020] Obtain the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB;

[0021] The fourth direction line OD is rotated around the origin O in the same direction and at the same angle to obtain the fifth direction line OE.

[0022] The density of conductive contacts on one side of the fifth direction line OE of the grounding component is greater than the density of conductive contacts on the other side.

[0023] Optionally, the set angle is 90°.

[0024] Optionally, after obtaining the fifth direction line OE, the method further includes:

[0025] The sixth direction line OF is obtained by determining the reverse extension of the second direction line OB, and the seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE.

[0026] Obtain the eighth direction line OH such that ∠GOF equals ∠GOH;

[0027] The density of conductive contacts on the grounding assembly within the area covered by ∠EOF and ∠EOH is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

[0028] Optionally, after obtaining the fifth direction line OE, the method further includes:

[0029] Obtain the ninth direction line OM such that ∠EOB equals ∠EOM;

[0030] The density of conductive contacts on the grounding assembly within the area covered by ∠EOM and ∠EOB is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

[0031] Optionally, after obtaining the fifth direction line OE, the method further includes:

[0032] The sixth direction line OF is obtained by determining the reverse extension of the second direction line OB, and the seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE.

[0033] Obtain the eighth direction line OH such that ∠GOF equals ∠GOH;

[0034] Obtain the ninth direction line OM such that ∠EOB equals ∠EOM;

[0035] The distribution density of conductive contacts in the grounding assembly is as follows: the area covered by ∠EOM and ∠EOB > the area covered by ∠MOF and ∠BOH > the area covered by ∠FOH.

[0036] Optionally, after obtaining the fifth direction line OE, the method further includes:

[0037] The seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE;

[0038] Obtain the tenth direction line ON, such that ∠GOA equals ∠GON;

[0039] The density of conductive contacts on the grounding assembly within the area covered by ∠EOA and ∠EON is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

[0040] Optionally, after obtaining the fifth direction line OE, the method further includes:

[0041] The seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE;

[0042] The density of conductive contacts on the grounding component within the area covered by the fifth direction line OE rotating counterclockwise around the origin O to the seventh direction line OG and clockwise to the seventh direction line OG gradually decreases from large to small.

[0043] To address the aforementioned technical problems, according to a fourth aspect of this application, a method for improving thin film uniformity is also provided, comprising the following steps:

[0044] The grounding assembly in the reaction chamber is configured using the conductive contact distribution method described above.

[0045] A thin film was deposited in the reaction chamber using a physical vapor deposition process.

[0046] The grounding component and conductive contact distribution method and the method for improving thin film uniformity provided in this application include the following distribution method: taking the center of the grounding component as the origin O; determining the projections of the filter box and matching electrode, baffle and gearbox in the semiconductor device onto the plane where the grounding component is located, and obtaining a first direction line OA pointing to the projection of the filter box and matching electrode, a second direction line OB pointing to the projection of the baffle, and a third direction line OC pointing to the projection of the gearbox, all originating from the origin O; bisecting ∠AOB, and extending from the origin O at one end of the bisector to the other end to obtain a fourth direction line OD, where ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, and the area where the angle is located does not cover the third direction line OC; obtaining the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB; rotating the fourth direction line OD around the origin O with the same rotation direction and rotation angle to obtain a fifth direction line OE; the density of conductive contacts on one side of the grounding component pointing to the fifth direction line OE is greater than the density of conductive contacts on the other side. This application obtains a first direction line OA, a second direction line OB, and a third direction line OC based on the projection of the filter box, matching electrode, baffle, and gearbox onto the plane where the grounding assembly is located. A fifth direction line OE is then obtained through these three direction lines. The density of conductive contacts on the grounding assembly on the side pointed to by the fifth direction line OE is greater than the density of conductive contacts on the other side of the grounding assembly. This compensates for the uneven distribution of the magnetic field or plasma within the cavity caused by the presence of the filter box, matching electrode, baffle, and gearbox, optimizing the cavity grounding effect and ensuring uniform distribution of sputtered particles within the cavity, thereby improving the uniformity of the cavity process. Simultaneously, it avoids irreversible damage to components within the cavity due to grounding abnormalities, saving costs.

[0047] In addition, by setting the material of the conductive contact to an alloy with shape memory function, the conductive contact can be self-repaired, thus improving its service life and reducing the frequency of downtime for opening and replacing the conductive contact, thereby improving production efficiency.

[0048] Furthermore, by setting up multiple temperature control mechanisms to individually control the temperature of each conductive contact, the deformation degree of each conductive contact can be adjusted individually, thereby adjusting the contact area between each conductive contact and the chamber baffle to fine-tune the grounding effect, thus further optimizing the process uniformity.

[0049] Furthermore, by setting up multiple transmission mechanisms to drive each conductive contact to move in a direction perpendicular to the grounding assembly, the grounding effect at different positions on the grounding assembly is adjusted, thereby further optimizing the process uniformity.

[0050] In the method for improving thin film uniformity provided in this application, the grounding assembly in the reaction chamber is configured using the conductive contact distribution method in the grounding assembly as described above, and a thin film is deposited in the reaction chamber using a physical vapor deposition process. Because the distribution of conductive contacts in the grounding assembly is adjusted, the process uniformity of the chamber is improved, thereby improving the uniformity of the formed thin film. Attached Figure Description

[0051] Figure 1 This is a schematic diagram of the structure of a PVD reaction chamber in the prior art.

[0052] Figure 2 This is a schematic diagram of the structure of a grounding component in the prior art.

[0053] Figure 3 This is a schematic diagram of the structure of a grounding component of a semiconductor device provided in an embodiment of this application.

[0054] Figure 4 This is a top view of a grounding component provided in an embodiment of this application.

[0055] Figure 5 This is a front view of one of the conductive contacts in a grounding assembly provided in an embodiment of this application.

[0056] Figure 6 This is a right view of one of the conductive contacts in a grounding assembly provided in an embodiment of this application.

[0057] Figure 7 yes Figure 6 The diagram shows the conductive contact after it has been moved in a direction perpendicular to the grounding component.

[0058] Figure 8 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application.

[0059] Figure 9 This is a top view schematic diagram of a semiconductor device provided in an embodiment of this application.

[0060] Figure 10 This is a schematic diagram of the projection of the filter box, matching electrode, baffle, and gearbox provided in an embodiment of this application onto the plane where the grounding component is located.

[0061] Figure 11 This is a schematic flowchart of a method for distributing conductive contacts in a grounding component of a semiconductor device according to an embodiment of this application.

[0062] Figure 12 This is a schematic diagram provided in one embodiment of the present application after determining the first direction line OA, the second direction line OB, and the third direction line OC on the grounding component.

[0063] Figure 13 This is a schematic diagram provided in one embodiment of the present application after determining the fourth direction line OD and the fifth direction line OE on the grounding component.

[0064] Figure 14 This is a schematic diagram showing the relationship between the directional lines on the grounding component provided in Embodiment 2 of this application.

[0065] Figure 15 This is a schematic diagram showing the relationship between the directional lines on the grounding component provided in Embodiment 3 of this application.

[0066] Figure 16 This is a schematic diagram showing the relationship between the directional lines on the grounding component provided in Embodiment 4 of this application.

[0067] Figure 17 This is a schematic diagram showing the relationship between the directional lines on the grounding component provided in Embodiment 5 of this application.

[0068] Figure 18 This is a schematic flowchart of a method for improving film uniformity provided in an embodiment of this application.

[0069] Explanation of reference numerals in the attached figures:

[0070] 1-Reaction chamber; 2-Filter box and matching electrode; 3-Baffle plate; 4-Gearbox; 5-Magnetron and target cavity; 10-Grounding assembly; 11-Base; 12-Conductive contact; 13-Temperature control mechanism; 14-Transmission mechanism; 110-Projection of filter box and matching electrode; 120-Projection of baffle plate; 130-Projection of gearbox. Detailed Implementation

[0071] The reaction chamber is equipped with external structures such as a gearbox, filter box, matching electrode, and shutter. The filter box, matching electrode, and gearbox all need to be powered. Due to the influence of the external structure of the chamber, the magnetic field or plasma distribution in the reaction chamber is uneven, and the plasma environment is abnormal, which leads to uneven film growth.

[0072] To address this problem, the inventors discovered that by adjusting the distribution of conductive contacts in the grounding assembly, the magnetic field or plasma environment can be improved. The electrostatic chuck ground current decreases in the corresponding area where the conductive contacts are removed, the energy attracting plasma weakens, and the formed film becomes thinner, thereby improving the uniformity of film growth.

[0073] Further research reveals that this application provides a grounding component for a semiconductor device, comprising: a base, and a plurality of conductive contacts disposed on the base, the plurality of conductive contacts being arranged in a non-uniform distribution on the base.

[0074] Accordingly, this application also provides a semiconductor device, including: a reaction chamber, a filter box and matching electrode, a baffle plate, a gearbox, and a grounding assembly as described above; wherein the filter box and matching electrode, the gearbox, and the gearbox are located at the top of the reaction chamber, the baffle plate is located on the side of the reaction chamber, and the grounding assembly is located inside the reaction chamber;

[0075] The projections of the filter box and matching electrode on the plane of the grounding component partially overlap with the grounding component. The projection of the gearbox on the plane of the grounding component is within the grounding component. Compared with the projection of the gearbox, the projections of the filter box and matching electrode are further away from the center of the grounding component. The projection of the baffle on the plane of the grounding component does not overlap with the grounding component.

[0076] Within the grounding assembly, multiple conductive contacts are unevenly distributed on the base.

[0077] Accordingly, this application provides a method for distributing conductive contacts in a grounding assembly of a semiconductor device, comprising: taking the center of the grounding assembly as the origin O; determining the projections of the filter box, matching electrode, baffle, and gearbox in the semiconductor device onto the plane of the grounding assembly, obtaining a first direction line OA pointing from the origin O to the projections of the filter box and matching electrode, a second direction line OB pointing to the projections of the baffle, and a third direction line OC pointing to the projections of the gearbox; bisecting ∠AOB, extending from the origin O at one end of the bisector to the other end to obtain a fourth direction line OD, wherein ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, and the area where the angle is located does not cover the third direction line OC; obtaining the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB; rotating the fourth direction line OD around the origin O with the same rotation direction and rotation angle to obtain a fifth direction line OE; wherein the density of conductive contacts on the side pointed to by the fifth direction line OE of the grounding assembly is greater than the density of conductive contacts on the other side.

[0078] Accordingly, the present invention also provides a method for improving the uniformity of thin films, comprising: setting a grounding assembly in a reaction chamber using the distribution method of conductive contacts in a grounding assembly as described above; and depositing a thin film in the reaction chamber using a physical vapor deposition process.

[0079] The method for distributing conductive contacts in the grounding assembly and the method for improving thin film uniformity provided in this application obtains a first direction line OA, a second direction line OB, and a third direction line OC based on the projection of the filter box, matching electrode, baffle, and gearbox onto the plane where the grounding assembly is located. A fifth direction line OE is then obtained through these three direction lines. The density of conductive contacts on the grounding assembly on the side pointed to by the fifth direction line OE is greater than the density of conductive contacts on the grounding assembly on the other side. This counteracts the non-uniform magnetic field or plasma distribution within the cavity caused by the presence of the filter box, matching electrode, baffle, and gearbox, optimizing the cavity grounding effect and resulting in a uniform distribution of sputtered particles within the cavity. This improves the process uniformity of the cavity, thereby improving the uniformity of the formed thin film. Simultaneously, it avoids irreversible damage to components within the cavity due to grounding abnormalities, saving costs.

[0080] To make the objectives, advantages, and features of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, used only to facilitate and clarify the illustration of the embodiments of this application. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and sometimes use different scales.

[0081] As used herein, the singular forms “a,” “an,” and “the” include plural objects unless otherwise expressly indicated. As used herein, the term “or” is generally used to include “and / or” unless otherwise expressly indicated. As used herein, the term “a number” is generally used to include “at least one” unless otherwise expressly indicated. As used herein, the term “at least two” is generally used to include “two or more” unless otherwise expressly indicated. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature, unless otherwise expressly indicated.

[0082] Figure 3 This is a schematic diagram of the structure of a grounding component of a semiconductor device according to an embodiment of this application. Please refer to... Figure 3 As shown, the grounding assembly 10 of the semiconductor device provided in this application embodiment includes: a base 11, and a plurality of conductive contacts 12 disposed on the base 11, wherein the plurality of conductive contacts 12 are arranged in an uneven distribution on the base 11.

[0083] In this application, the plurality of conductive contacts 12 are arranged in a non-uniform distribution on the base 11 to counteract the non-uniform magnetic field or plasma distribution in the cavity caused by the presence of filter boxes, matching electrodes, baffles and gearboxes in the semiconductor equipment, optimize the cavity grounding effect, make the sputtered particles in the cavity uniformly distributed, thereby improving the uniformity of the cavity process; at the same time, it can also avoid irreversible damage to the components in the cavity caused by abnormal grounding, saving costs.

[0084] In one embodiment of this application, the base 11 is annular and conductive. The conductive contact 12 is an elastic spring and is detachably fixed to the base 11.

[0085] In one embodiment of this application, the material of the conductive contact 12 may include an alloy with shape memory function, such as a titanium-nickel alloy with shape memory function. An alloy with shape memory function is a special metallic material that, after undergoing plastic deformation within a certain temperature range, can recover its original macroscopic shape within another temperature range. In this embodiment, the conductive contact 12 can be repaired by temperature changes within the reaction chamber where the grounding component is located (the temperature during process execution and the temperature when no process execution is performed). Damage such as creases generated in the conductive contact 12 during use can be self-repaired by temperature changes within the chamber.

[0086] In another embodiment, the grounding assembly is provided with a temperature control mechanism to control the temperature of the conductive contact 12. After the conductive contact 12 suffers damage such as creases during use, the temperature control mechanism can adjust the temperature of the conductive contact 12, enabling the conductive contact 12 to self-repair.

[0087] In this application, by setting the material of the conductive contact 12 to an alloy with shape memory function, the conductive contact 12 can be self-repaired by damage, thereby improving the service life of the conductive contact 12, reducing the frequency of downtime for cavity opening and replacement of the conductive contact 12, and improving production efficiency.

[0088] Figure 4 This is a top view of a grounding component provided in an embodiment of this application. Figure 5 This is a front view of one of the conductive contacts in a grounding assembly provided in an embodiment of this application. Figure 6 This is a right view of one of the conductive contacts in a grounding assembly provided in an embodiment of this application. Figure 7 yes Figure 6 This is a schematic diagram showing the conductive contact after it has been moved in a direction perpendicular to the grounding assembly. Figure 5 The front view and Figure 6 The right view only shows Figure 4 The conductive contact in the circle.

[0089] In one embodiment of this application, please refer to Figure 5 As shown, the grounding assembly is provided with multiple temperature control mechanisms 13, and each temperature control mechanism 13 corresponds one-to-one with the conductive contact 12. Figure 5 Only one temperature control mechanism 13 and its corresponding conductive contact 12 are shown in the figure, so as to individually control the temperature of each of the conductive contacts 12.

[0090] By setting multiple temperature control mechanisms 13 to individually control the temperature of each conductive contact 12, the deformation degree of each conductive contact 12 can be adjusted individually, thereby adjusting the contact area between each conductive contact 12 and the chamber baffle to fine-tune the grounding effect, thereby further optimizing the process uniformity.

[0091] Please refer to Figures 6 to 7 As shown, the grounding assembly is provided with multiple transmission mechanisms 14 that move along a direction perpendicular to the grounding assembly. Each transmission mechanism 14 corresponds one-to-one with a conductive contact 12 (only one transmission mechanism 14 and its corresponding conductive contact 12 are shown in the figure), so as to individually drive each conductive contact 12 to move. Please refer to... Figure 6 and Figure 7 As shown, the conductive contact 12 can move up and down in the vertical direction (i.e., perpendicular to the grounding component) under the drive of the transmission mechanism 14. It should be noted that... Figure 6 and Figure 7 In the diagram, the dashed line shows the shape of the conductive contact 12 after it is compressed upon contact with the chamber baffle.

[0092] In this application, multiple transmission mechanisms 14 are provided to drive each conductive contact 12 to move in a direction perpendicular to the grounding assembly 10, thereby adjusting the grounding effect at different positions on the grounding assembly 10 and further optimizing the process uniformity.

[0093] Figure 8 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application. Figure 9 This is a top view schematic diagram of a semiconductor device provided in an embodiment of this application. Please refer to 1. Figure 3 , Figure 8 and Figure 9 As shown, the semiconductor device provided in this embodiment includes: a reaction chamber 1, a filter box and matching electrode 2, a baffle plate 3, and a gearbox 4. The filter box and matching electrode 2 and the gearbox 4 are located at the top of the reaction chamber 1, the baffle plate 3 is located on the side of the reaction chamber 1, and the grounding assembly 10 is located inside the reaction chamber 1. Please refer to... Figure 8As shown, the semiconductor device also includes a magnetron and a target cavity 5 located at the top of the reaction chamber 1. The magnetron and target cavity 5 contains a magnetron and a target. The filter box and matching electrode 2 and the gearbox 4 are located in the magnetron and target cavity 5.

[0094] The filter box and matching electrode 2, as well as the gearbox 4, are all located at the top of the reaction chamber 1, with the filter box and matching electrode 2 located above the gearbox 4. The filter box and matching electrode 2 and the gearbox 4 partially overlap in the vertical direction.

[0095] Figure 10 This is a schematic diagram showing the projection of the filter box, matching electrode, baffle, and gearbox provided in one embodiment of this application onto the plane where the grounding assembly is located. Please refer to... Figures 8 to 10 As shown, the projections of the filter box and matching electrode 2 onto the plane of the grounding assembly 10 (i.e., the projection 110 of the filter box and matching electrode) partially overlap with the grounding assembly 10. The projection of the gearbox 4 onto the plane of the grounding assembly 10 (i.e., the gearbox projection 130) is within the grounding assembly 10, and compared to the gearbox projection 130, the projection 110 of the filter box and matching electrode is further away from the center of the grounding assembly 10. The projection of the baffle 3 onto the plane of the grounding assembly 10 (i.e., the baffle projection 120) does not overlap with the grounding assembly 10. Within the grounding assembly 10, multiple conductive contacts 12 are unevenly distributed on the base 11.

[0096] In one embodiment of this application, the semiconductor device is a PVD device.

[0097] The filter box and matching electrode 2, the baffle 3, and the gearbox 4 are disposed outside the reaction chamber 1. Due to the influence of the external structure of the reaction chamber 1, the magnetic field or plasma distribution inside the reaction chamber is uneven. In this embodiment, the multiple conductive contacts 12 in the grounding assembly 10 are arranged unevenly on the base 11, which can counteract the uneven distribution of magnetic field or plasma caused by the presence of the filter box and matching electrode 2, baffle 3, and gearbox 4 in the semiconductor device, optimize the grounding effect of the chamber, make the sputtered particles in the chamber uniformly distributed, thereby improving the uniformity of the chamber process; at the same time, it can also avoid irreversible damage to the components in the chamber caused by abnormal grounding, saving costs.

[0098] Figure 11 This is a flowchart illustrating a method for distributing conductive contacts in a grounding assembly according to an embodiment of this application. Please refer to... Figure 11 As shown in the embodiments of this application, the method for distributing conductive contacts in a grounding assembly includes the following steps:

[0099] S1: Take the center of the grounding component as the origin O;

[0100] S2: Determine the projections of the filter box and matching electrode, baffle and gearbox in the semiconductor device onto the plane where the grounding component is located, and obtain the first direction line OA pointing to the projection of the filter box and matching electrode, the second direction line OB pointing to the projection of the baffle, and the third direction line OC pointing to the projection of the gearbox, with the origin O as the starting point.

[0101] S3: Bisect ∠AOB, and extend from the origin O at one end of the bisector to the other end to obtain the fourth direction line OD, where ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, and the area where the angle is located does not cover the third direction line OC.

[0102] S4: Obtain the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB;

[0103] S5: Rotate the fourth direction line OD around the origin O in the same direction and with the same angle to obtain the fifth direction line OE;

[0104] S6: The density of conductive contacts on the side pointed to by the fifth direction line OE of the grounding component is greater than the density of conductive contacts on the other side.

[0105] Figure 12 This is a schematic diagram illustrating the determination of a first direction line OA, a second direction line OB, and a third direction line OC on a grounding assembly, according to an embodiment of this application. Please refer to... Figure 12 As shown, in step S1, the center of the grounding component 10 is taken as the origin O.

[0106] Please continue to refer to this. Figure 12 As shown, in step S2, the projections of the filter box, matching electrode, baffle, and gearbox on the plane where the grounding assembly 10 is located are determined, and a first direction line OA pointing to the projection 110 of the filter box and matching electrode, a second direction line OB pointing to the projection 120 of the baffle, and a third direction line OC pointing to the projection 130 of the gearbox are obtained, with the origin O as the starting point.

[0107] In this embodiment, the projections of the filter box, matching electrode, baffle, and gearbox onto the plane of the grounding assembly 10 are first determined, resulting in a filter box and matching electrode projection 110, a baffle projection 120, and a gearbox projection 130. Then, starting from the origin O, pointing to these three projections respectively, a first direction line OA pointing to the filter box and matching electrode projection 110, a second direction line OB pointing to the baffle projection 120, and a third direction line OC pointing to the gearbox projection 130 are obtained. It should be noted that since the filter box and matching electrode are located together outside the chamber, in this embodiment, the filter box and matching electrode are treated as a single unit, and their projections onto the plane of the grounding assembly 10 are determined together.

[0108] In one embodiment of this application, the first direction line OA bisects the projection 110 of the filter box and the matching electrode, the second direction line OB bisects the projection 120 of the baffle plate, and the third direction line OC bisects the projection 130 of the gearbox. However, this is not the only embodiment.

[0109] Figure 13 This is a schematic diagram illustrating the determination of the fourth direction line OD and the fifth direction line OE on the grounding assembly according to an embodiment of this application. Please refer to... Figure 13 As shown, in step S3, ∠AOB is bisected, and the fourth direction line OD is obtained by extending from the origin O at one end of the bisector to the other end. That is, the bisector of ∠AOB has two ends, one end being the origin O, and the direction obtained by extending from the origin O to the other end is the fourth direction line OD.

[0110] In this embodiment, ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, provided that the area containing this angle does not cover the third direction line OC. It can be understood that rotating clockwise from the first direction line OA to the second direction line OB, and rotating counterclockwise from the first direction line OA to the second direction line OB, both constitute ∠AOB. In this embodiment, ∠AOB refers to the angle formed by rotating from the first direction line OA to the second direction line OB without covering the third direction line OC; that is, the angle formed by rotating counterclockwise from the first direction line OA to the second direction line OB, which is the smaller angle of the two angles formed by clockwise and counterclockwise rotations. Other angles mentioned in subsequent embodiments also refer to the angle with the smaller rotation angle between clockwise and counterclockwise rotations.

[0111] Please continue to refer to this. Figure 13 As shown, in step S4, the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB are obtained. That is, the second direction line OB is rotated around the origin O to the third direction line OC, and the rotation direction and rotation angle of this rotation are obtained. In this embodiment, the rotation direction is counterclockwise, and the rotation angle is the included angle θ.

[0112] Please continue to refer to this. Figure 13 As shown, in step S5, the fourth direction line OD is rotated around the origin O in the same direction and by the same angle to obtain the fifth direction line OE. In this embodiment, the fourth direction line OD is rotated counterclockwise by an angle θ to obtain the fifth direction line OE.

[0113] Please continue to refer to this. Figure 13 As shown, in step S6, the density of conductive contacts on the side pointed to by the fifth direction line OE of the grounding component is greater than the density of conductive contacts on the other side.

[0114] This application obtains a first direction line OA, a second direction line OB, and a third direction line OC based on the projection of the filter box, matching electrode, baffle, and gearbox onto the plane where the grounding assembly is located. A fifth direction line OE is then obtained through these three direction lines. The density of conductive contacts on the grounding assembly on the side pointed to by the fifth direction line OE is greater than the density of conductive contacts on the other side of the grounding assembly. This compensates for the uneven distribution of the magnetic field or plasma within the cavity caused by the presence of the filter box, matching electrode, baffle, and gearbox, optimizing the cavity grounding effect and ensuring uniform distribution of sputtered particles within the cavity, thereby improving the uniformity of the cavity process. Simultaneously, it avoids irreversible damage to components within the cavity due to grounding abnormalities, saving costs.

[0115] In this embodiment, the set angle can be determined manually or through the relationship between the five directional lines mentioned above. The following specific embodiments illustrate this.

[0116] In Embodiment 1, the set angle is 90°, meaning that the density of conductive contacts on the grounding component 10 within the 180° area covered by the fifth direction line OE rotating 90° counterclockwise and 90° clockwise around the origin O is greater than the density of conductive contacts on the grounding component 10 within the remaining 180° area. Of course, the set angle is not limited to 90°; it can also be any suitable angle such as 80° or 100°.

[0117] Figure 14 This is a schematic diagram showing the relationship between the directional lines on the grounding assembly provided in Embodiment 2 of this application. For Embodiment 2, please refer to... Figure 14 As shown, after obtaining the fifth direction line OE, the process further includes:

[0118] First, the sixth direction line OF is obtained by extending the second direction line OB in the opposite direction, and the seventh direction line OG is obtained by extending the fifth direction line OE in the opposite direction. That is, the second direction line OB and the sixth direction line OF are on the same straight line and point in opposite directions, and the fifth direction line OE and the seventh direction line OG are on the same straight line and point in opposite directions.

[0119] Next, the eighth direction line OH is obtained, such that ∠GOF equals ∠GOH. The sixth direction line OF is located counterclockwise from the seventh direction line OG (that is, the sixth direction line OF can be obtained by rotating the seventh direction line OG counterclockwise). Based on the angle between the sixth direction line OF and the seventh direction line OG, the seventh direction line OG is rotated clockwise by the same angle to obtain the eighth direction line OH.

[0120] Then, the density of conductive contacts on the grounding assembly within the area covered by ∠EOF and ∠EOH is greater than the density of conductive contacts on the grounding assembly in the remaining areas. Where ∠GOF equals ∠GOH, and the fifth direction line OE and the seventh direction line OG are on the same straight line, therefore ∠EOF equals ∠EOH.

[0121] In this embodiment, the set angle refers to ∠EOF and ∠EOH.

[0122] Figure 15 This is a schematic diagram showing the relationship between the directional lines on the grounding assembly provided in Embodiment 3 of this application. For Embodiment 3, please refer to... Figure 15 As shown, after obtaining the fifth direction line OE, the process further includes:

[0123] First, obtain the ninth direction line OM such that ∠EOB equals ∠EOM. The second direction line OB is located counterclockwise from the fifth direction line OE. Based on the angle between the second direction line OB and the fifth direction line OE, rotate the fifth direction line OE clockwise by the same angle to obtain the ninth direction line OM.

[0124] Then, the density of conductive contacts on the grounding assembly 10 within the area covered by ∠EOM and ∠EOB is greater than the density of conductive contacts on the grounding assembly 10 in the remaining areas.

[0125] In this embodiment, the set angle refers to ∠EOM and ∠EOB.

[0126] Figure 16 This is a schematic diagram showing the relationship between the directional lines on the grounding assembly provided in Embodiment 4 of this application. For Embodiment 4, please refer to... Figure 16 As shown, after obtaining the fifth direction line OE, the process further includes:

[0127] First, the sixth direction line OF is obtained by extending the second direction line OB in the opposite direction, and the seventh direction line OG is obtained by extending the fifth direction line OE in the opposite direction. That is, the second direction line OB and the sixth direction line OF are on the same straight line and point in opposite directions, and the fifth direction line OE and the seventh direction line OG are on the same straight line and point in opposite directions.

[0128] Then, the eighth direction line OH is obtained such that ∠GOF equals ∠GOH. The sixth direction line OF is located counterclockwise from the seventh direction line OG. Based on the angle between the sixth direction line OF and the seventh direction line OG, the seventh direction line OG is rotated clockwise by the same angle to obtain the eighth direction line OH.

[0129] Next, the ninth direction line OM is obtained, such that ∠EOB equals ∠EOM. The second direction line OB is located counterclockwise from the fifth direction line OE. Based on the angle between the second direction line OB and the fifth direction line OE, the fifth direction line OE is rotated clockwise by the same angle to obtain the ninth direction line OM.

[0130] Then, the distribution density of conductive contacts in the grounding assembly 10 is as follows: the area covered by ∠EOM and ∠EOB > the area covered by ∠MOF and ∠BOH > the area covered by ∠FOH. ∠EOM equals ∠EOB, and the density of conductive contacts on the grounding assembly 10 is equal in the areas covered by ∠EOM and ∠EOB. ∠MOF equals ∠BOH, and the density of conductive contacts on the grounding assembly 10 is equal in the areas covered by ∠MOF and ∠BOH. The density of conductive contacts on the grounding assembly 10 is highest in the area covered by ∠EOM and ∠EOB, lowest in the area covered by ∠FOH, and intermediate in the area covered by ∠MOF and ∠BOH.

[0131] Figure 17 This is a schematic diagram showing the relationship between the directional lines on the grounding assembly provided in Embodiment 5 of this application. For Embodiment 5, please refer to... Figure 17 As shown, after obtaining the fifth direction line OE, the process further includes:

[0132] First, the seventh direction line OG is obtained by extending the fifth direction line OE in the opposite direction. The fifth direction line OE and the seventh direction line OG are on the same straight line and point in opposite directions.

[0133] Next, the tenth direction line ON is obtained, such that ∠GOA equals ∠GON. The first direction line OA is located counterclockwise from the seventh direction line OG. Based on the angle between the first direction line OA and the seventh direction line OG, the seventh direction line OG is rotated clockwise by the same angle to obtain the tenth direction line ON.

[0134] Then, the density of conductive contacts on the grounding assembly within the area covered by ∠EOA and ∠EON is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

[0135] In Example 6, please continue to refer to... Figure 17 As shown, after obtaining the fifth direction line OE, the process further includes:

[0136] First, the seventh direction line OG is obtained by extending the fifth direction line OE in the opposite direction. The fifth direction line OE and the seventh direction line OG are on the same straight line and point in opposite directions.

[0137] Next, the fifth direction line OE rotates counterclockwise around the origin O to the seventh direction line OG and clockwise to the seventh direction line OG, and the density of conductive contacts on the grounding component 10 in the covered area gradually decreases from large to small.

[0138] In this application, by setting different densities of conductive contacts in different areas of the grounding component 10, the uneven distribution of magnetic field or plasma in the cavity caused by the presence of filter box, matching electrode, baffle and gearbox is offset, the cavity grounding effect is optimized, the sputtered particles in the cavity are evenly distributed, thereby improving the uniformity of the cavity process; at the same time, it can also avoid irreversible damage to the components in the cavity caused by grounding abnormality, saving costs.

[0139] Accordingly, this application also provides a method for improving the uniformity of thin films. Figure 18 This is a schematic flowchart illustrating a method for improving thin film uniformity according to an embodiment of this application. Please refer to it. Figure 18 As shown, the method for improving film uniformity provided in this application includes the following steps:

[0140] S10: The grounding assembly in the reaction chamber is set up using the distribution method of conductive contacts in the grounding assembly as described above;

[0141] S20: A thin film is deposited in the reaction chamber using a physical vapor deposition process.

[0142] In step S10, please refer to Figures 12 to 17As shown, the grounding assembly in the reaction chamber is set up using the distribution method of conductive contact 12 in the grounding assembly as described above, so as to counteract the uneven distribution of magnetic field or plasma in the chamber caused by the presence of filter box, matching electrode, baffle and gearbox, optimize the grounding effect of the chamber, make the sputtered particles in the chamber uniformly distributed, and thus improve the uniformity of the chamber process.

[0143] In step S20, a thin film is deposited in the reaction chamber using a physical vapor deposition process. As the uniformity of the chamber process is improved, the uniformity of the formed thin film is also improved.

[0144] In the method for improving thin film uniformity provided in this application, the grounding assembly in the reaction chamber is configured using the distribution method of the conductive contacts 12 in the grounding assembly as described above, and a thin film is deposited in the reaction chamber using a physical vapor deposition process. Because the distribution of the conductive contacts 12 in the grounding assembly is adjusted, the process uniformity of the chamber is improved, thereby improving the uniformity of the formed thin film.

[0145] In summary, the grounding component and conductive contact distribution method and the method for improving thin film uniformity provided in this application include the following distribution method: taking the center of the grounding component as the origin O; determining the projections of the filter box and matching electrode, baffle and gearbox in the semiconductor device onto the plane where the grounding component is located, and obtaining a first direction line OA pointing to the projection of the filter box and matching electrode, a second direction line OB pointing to the projection of the baffle, and a third direction line OC pointing to the projection of the gearbox, all originating from the origin O; bisecting ∠AOB, and extending from the origin O at one end of the bisector to the other end to obtain a fourth direction line OD, where ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, and the area where the angle is located does not cover the third direction line OC; obtaining the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB; rotating the fourth direction line OD around the origin O with the same rotation direction and rotation angle to obtain a fifth direction line OE; the density of conductive contacts on the side pointed to by the fifth direction line OE of the grounding component is greater than the density of conductive contacts on the other side. This application obtains a first direction line OA, a second direction line OB, and a third direction line OC based on the projection of the filter box, matching electrode, baffle, and gearbox onto the plane where the grounding assembly is located. A fifth direction line OE is then obtained through these three direction lines. The density of conductive contacts on the grounding assembly on the side pointed to by the fifth direction line OE is greater than the density of conductive contacts on the other side of the grounding assembly. This compensates for the uneven distribution of the magnetic field or plasma within the cavity caused by the presence of the filter box, matching electrode, baffle, and gearbox, optimizing the cavity grounding effect and ensuring uniform distribution of sputtered particles within the cavity, thereby improving the uniformity of the cavity process. Simultaneously, it avoids irreversible damage to components within the cavity due to grounding abnormalities, saving costs.

[0146] In addition, by setting the material of the conductive contact to an alloy with shape memory function, the conductive contact can be self-repaired, thus improving its service life and reducing the frequency of downtime for opening and replacing the conductive contact, thereby improving production efficiency.

[0147] Furthermore, by setting up multiple temperature control mechanisms to individually control the temperature of each conductive contact, the deformation degree of each conductive contact can be adjusted individually, thereby adjusting the contact area between each conductive contact and the chamber baffle to fine-tune the grounding effect, thus further optimizing the process uniformity.

[0148] Furthermore, by setting up multiple transmission mechanisms to drive each conductive contact to move in a direction perpendicular to the grounding assembly, the grounding effect at different positions on the grounding assembly is adjusted, thereby further optimizing the process uniformity.

[0149] In the method for improving thin film uniformity provided in this application, the grounding assembly in the reaction chamber is configured using the conductive contact distribution method in the grounding assembly as described above, and a thin film is deposited in the reaction chamber using a physical vapor deposition process. Because the distribution of conductive contacts in the grounding assembly is adjusted, the process uniformity of the chamber is improved, thereby improving the uniformity of the formed thin film.

[0150] The above description is merely a description of preferred embodiments of this application and is not intended to limit the scope of this application in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A grounding component for a semiconductor device, characterized in that, include: A base, and a plurality of conductive contacts disposed on the base, wherein the plurality of conductive contacts are arranged in an uneven distribution on the base.

2. The grounding assembly for a semiconductor device according to claim 1, characterized in that, The base is ring-shaped and conductive.

3. The grounding assembly for a semiconductor device according to claim 1, characterized in that, The conductive contact is an elastic spring sheet, which is detachably fixed to the base.

4. The grounding assembly for a semiconductor device according to claim 1, characterized in that, The conductive contact is made of an alloy with shape memory function.

5. The grounding assembly for a semiconductor device according to claim 4, characterized in that, The grounding assembly is equipped with multiple temperature control mechanisms, each corresponding to a conductive contact to individually control the temperature of each conductive contact; or / and, The grounding assembly is provided with multiple transmission mechanisms that move in a direction perpendicular to the grounding assembly. Each transmission mechanism corresponds to a conductive contact and can individually drive each conductive contact to move.

6. A semiconductor device, characterized in that, It includes a reaction chamber, a filter box and matching electrode, a baffle plate, a gearbox, and a grounding assembly as described in any one of claims 1 to 5; wherein the filter box and matching electrode, the gearbox, and the gearbox are located at the top of the reaction chamber, the baffle plate is located on the side of the reaction chamber, and the grounding assembly is located inside the reaction chamber; The projections of the filter box and matching electrode onto the plane of the grounding assembly partially overlap with the grounding assembly. The projection of the gearbox onto the plane of the grounding assembly is within the grounding assembly, and compared to the gearbox projection, the projections of the filter box and matching electrode are further away from the center of the grounding assembly. The projection of the baffle onto the plane of the grounding assembly does not overlap with the grounding assembly. Within the grounding assembly, multiple conductive contacts are unevenly distributed on the base.

7. The semiconductor device according to claim 6, characterized in that, The semiconductor device is a PVD device.

8. A method for distributing conductive contacts in a grounding assembly of a semiconductor device, characterized in that, Includes the following steps: Take the center of the grounding component as the origin O; Determine the projections of the filter box and matching electrode, baffle and gearbox in the semiconductor device onto the plane where the grounding component is located, and obtain the first direction line OA pointing to the projection of the filter box and matching electrode, the second direction line OB pointing to the projection of the baffle, and the third direction line OC pointing to the projection of the gearbox, with the origin O as the starting point. Bisect ∠AOB, and extend from the origin O at one end of the bisector to the other end to obtain the fourth direction line OD, where ∠AOB refers to the angle formed by the first direction line OA and the second direction line OB, and the area where the angle is located does not cover the third direction line OC. Obtain the rotation direction and rotation angle of the third direction line OC relative to the second direction line OB; The fourth direction line OD is rotated around the origin O in the same direction and at the same angle to obtain the fifth direction line OE. The density of conductive contacts on the side of the grounding assembly pointed to by the fifth direction line OE is greater than the density of conductive contacts on the other side.

9. The method for distributing conductive contacts in a semiconductor device grounding assembly according to claim 8, characterized in that, The set angle is 90°.

10. The method for distributing conductive contacts in a semiconductor device grounding assembly according to claim 8, characterized in that, After obtaining the fifth direction line OE, the process also includes: The sixth direction line OF is obtained by determining the reverse extension of the second direction line OB, and the seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE. Obtain the eighth direction line OH such that ∠GOF equals ∠GOH; The density of conductive contacts on the grounding assembly within the area covered by ∠EOF and ∠EOH is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

11. The method for distributing conductive contacts in a semiconductor device grounding assembly according to claim 8, characterized in that, After obtaining the fifth direction line OE, the process also includes: Obtain the ninth direction line OM such that ∠EOB equals ∠EOM; The density of conductive contacts on the grounding assembly within the area covered by ∠EOM and ∠EOB is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

12. The method for distributing conductive contacts in a semiconductor device grounding assembly according to claim 8, characterized in that, After obtaining the fifth direction line OE, the process also includes: The sixth direction line OF is obtained by determining the reverse extension of the second direction line OB, and the seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE. Obtain the eighth direction line OH such that ∠GOF equals ∠GOH; Obtain the ninth direction line OM such that ∠EOB equals ∠EOM; The distribution density of conductive contacts in the grounding assembly is as follows: the area covered by ∠EOM and ∠EOB > the area covered by ∠MOF and ∠BOH > the area covered by ∠FOH.

13. The method for distributing conductive contacts in a semiconductor device grounding assembly according to claim 8, characterized in that, After obtaining the fifth direction line OE, the process also includes: The seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE; Obtain the tenth direction line ON, such that ∠GOA equals ∠GON; The density of conductive contacts on the grounding assembly within the area covered by ∠EOA and ∠EON is greater than the density of conductive contacts on the grounding assembly in the remaining areas.

14. The method for distributing conductive contacts in a semiconductor device grounding assembly according to claim 8, characterized in that, After obtaining the fifth direction line OE, the process also includes: The seventh direction line OG is obtained by determining the reverse extension of the fifth direction line OE; The density of conductive contacts on the grounding component within the area covered by the fifth direction line OE rotating counterclockwise around the origin O to the seventh direction line OG and clockwise to the seventh direction line OG gradually decreases from large to small.

15. A method for improving the uniformity of a thin film, characterized in that, Includes the following steps: The grounding assembly in the reaction chamber is configured using the distribution method of conductive contacts in the semiconductor device grounding assembly as described in any one of claims 8 to 14; A thin film was deposited in the reaction chamber using a physical vapor deposition process.

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