Preparation method of diamond material and semiconductor device

By forming a nanoscale catalytic nickel layer on the surface of a diamond film and utilizing a nano-nickel powder and vinylimidazolium-based ionic liquid system, the controllable growth of graphene was achieved, overcoming the limitations of expensive equipment, reducing preparation costs, and improving material properties.

CN121948439AActive Publication Date: 2026-05-01HUNAN LIANGCHENG NEW MATERIAL TECH CO LTD
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Patent Information

Application Number
CN202512000812.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-29
Publication Date
2026-05-01
Estimated Expiration
2045-12-29

AI Technical Summary

Technical Problem

The preparation of graphene/diamond heterostructures in existing technologies requires expensive coating equipment, which limits their industrial application.

Method used

By employing a synergistic system of nano-nickel powder and vinylimidazolium ionic liquid, a nanoscale uniform catalytic nickel layer is formed on the surface of a diamond film. Controllable growth of graphene is achieved through pyrolysis and high-temperature treatment, avoiding dependence on expensive equipment.

Benefits of technology

This reduces manufacturing costs, ensures the performance of diamond materials, and provides industrialization options for field emission devices, thermal management devices, and high-frequency electronic devices.

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Abstract

The invention relates to the field of diamond materials, in particular to a preparation method of a diamond material and a semiconductor device.The preparation method specifically comprises the steps that a polyion liquid layer containing nanometer nickel powder is formed on the surface of a diamond film; then carrying out pyrolysis at the temperature of 400 to 500 DEG C, and then growing graphene at the temperature of 800 to 1000 DEG C; according to the method, the dependence on expensive coating equipment is broken through, the preparation cost is greatly reduced while the performance of the diamond material is guaranteed, and more economical preparation options are provided for industrialization of field emission devices, thermal management devices and high-frequency electronic devices.
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