Metal gate device structure fabrication method and metal gate device structure

Abstract

The application discloses a metal gate device structure manufacturing method and a metal gate device structure. The method comprises the following steps: when first work function layers to fifth work function layers are formed on first fins to sixth fins, the second work function layer on the first fins to the fourth fins, the third work function layer on the first fins to the third fins, and the fourth work function layer on the first fins to the second fins are selectively removed; and the first work function layer on each fin before the second work function layer is formed, the exposed first work function layer before the third work function layer is formed, the retained second work function layer, the exposed first work function layer before the fourth work function layer is formed, the retained third work function layer, and the exposed first work function layer before the fifth work function layer is formed and the retained fourth work function layer are respectively subjected to a first treatment by using oxygen radicals, so that the roughness of the treated surface is reduced, the fluctuation of the threshold voltage is reduced, and the stability of the on-voltage regulation is improved.

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