Device with piezoelectric film on semiconductor substrate
By separately fabricating piezoelectric films on a semiconductor substrate and using bonding layers and caps to form air gaps, the problems of piezoelectric film contamination and manufacturing environment incompatibility were solved, enabling the fabrication and simplified alignment of high-frequency, high-Q resonators and improving resonator performance.
Patent Information
- Application Number
- CN202511502610.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-10-31
- Filing Date
- 2025-10-21
- Publication Date
- 2026-05-01
AI Technical Summary
Forming piezoelectric films on semiconductor substrates presents challenges such as contamination and incompatibility with manufacturing environments, resulting in poor quality piezoelectric films that are difficult to operate at high frequencies.
The piezoelectric film is fabricated separately from the integrated circuit. An air gap is formed using a bonding layer and a cap to simplify alignment. The piezoelectric film is excited by electrodes to generate standing waves, avoiding degradation caused by bonding line inductance.
The fabrication of a high-frequency, high-Q resonator was realized, simplifying the alignment process, improving the quality of the piezoelectric film and the performance of the resonator, and making it suitable for high-frequency operation.