Substrate processing method and substrate processing apparatus

Abstract

The invention provides a substrate processing method and a substrate processing apparatus capable of suppressing uneven processing of a substrate, suppressing abrasion between the substrate and a gripping part for gripping the substrate, and suppressing generation of particles caused by abrasion. The substrate processing apparatus includes: a holding portion for horizontally holding a substrate; a rotating part for rotating the holding part; and a control unit. The holding portion includes: a rotating disk that can be rotated by the rotating portion; a first grasping part which can rotate together with the rotating disk and can move between a grasping position for grasping the periphery of the substrate and a releasing position for releasing the substrate; and a second gripping part which can rotate together with the rotating disk and can move between a gripping position and a releasing position independently of the first gripping part. The control unit is capable of alternately gripping the peripheral edge of the substrate by the first gripping unit and the second gripping unit while the holding unit is rotated by the rotating unit and the liquid is supplied to the substrate held by the holding unit.

Description

Substrate processing method and substrate processing apparatus

[0001] This case is filed on the date of application. July 26, 2021 Application number is 202110843152.8 The invention is named Substrate processing Methods and substrate processing apparatus A divisional application of the patent application. Technical Field

[0002] This invention relates to a substrate processing method and a substrate processing apparatus. Background Technology

[0003] The substrate processing apparatus disclosed in Patent Document 1 processes both the front and back sides of a substrate, such as a semiconductor wafer, while rotating it in a horizontal plane. The substrate is held in a slidable manner by multiple substrate support members. These support members rotate together with a rotating base. Through a certain acceleration / deceleration or the supply of liquid, the substrate slides out relative to the support members, creating a difference in rotational speed between the substrate and the rotating base, thus causing the substrate to rotate relative to the rotating base.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2002-93891 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] One aspect of the present invention provides a technique capable of suppressing uneven processing of the substrate, suppressing wear between the substrate and the gripping portion of the substrate, and suppressing the generation of particles caused by wear.

[0009] Means for solving technical problems

[0010] One aspect of the substrate processing apparatus of the present invention includes: a holding portion for horizontally holding a substrate; a rotating portion for rotating the holding portion; a liquid supply portion for supplying liquid to the substrate horizontally held by the holding portion; and a control portion for controlling the holding portion, the rotating portion, and the liquid supply portion. The holding portion includes: a rotating disk rotatable by the rotating portion; a first gripping portion rotatable with the rotating disk and movable between a gripping position gripping the periphery of the substrate and a release position releasing the substrate; and a second gripping portion rotatable with the rotating disk and movable independently of the first gripping portion between the gripping position and the release position. The control portion is capable of alternately gripping the periphery of the substrate using the first gripping portion and the second gripping portion during the period when the holding portion is rotated by the rotating portion and liquid is supplied to the substrate held by the holding portion.

[0011] Invention Effects

[0012] By employing one aspect of the present invention, it is possible to suppress uneven processing of the substrate, suppress wear between the substrate and the gripping portion of the substrate, and suppress the generation of particles caused by wear. Attached Figure Description

[0013] Figure 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment.

[0014] Figure 2 is a magnified view of a portion of Figure 1.

[0015] Figure 3 is a cross-sectional view of the holding part according to one embodiment. (A) is a cross-sectional view showing the holding position of the first gripping part, and (B) is a cross-sectional view showing the release position of the first gripping part.

[0016] Figure 4 is a plan view showing an example of the movement of the first gripping part and the second gripping part. (A) is a plan view showing that both are in the release position, and (B) is a plan view showing that one is in the gripping position and the other is in the release position.

[0017] Figure 5 is a plan view showing an example of the movement of the first gripping part and the second gripping part. (A) is a plan view showing the state in which both are in the gripping position, and (B) is a plan view showing the state in which one is in the release position and the other is in the gripping position.

[0018] Figure 6 is a flowchart of a substrate processing method according to an embodiment.

[0019] Figure 7 is a timing diagram illustrating an example of a substrate changing gripping action.

[0020] Figure 8 is a timing diagram illustrating another example of the substrate changing gripping action.

[0021] Figure 9 is a cross-sectional view of the holding part in the first modified example. (A) is a cross-sectional view of the holding position of the first gripping part, and (B) is a cross-sectional view of the releasing position of the first gripping part.

[0022] Figure 10 is a cross-sectional view of the holding part in the second modified example. (A) is a cross-sectional view of the holding position of the first gripping part, and (B) is a cross-sectional view of the releasing position of the first gripping part.

[0023] Explanation of reference numerals in the attached figures

[0024] 10 Substrate processing apparatus, 20 Holding unit, 21 Rotary disk, 22A First gripping unit, 22B Second gripping unit, 23A First drive unit (drive unit), 40 Rotating unit, 50 First liquid supply unit, 60 Second liquid supply unit, 70 Third liquid supply unit, 90 Control unit. Detailed Implementation

[0025] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same or corresponding constituent elements are sometimes labeled with the same reference numerals, and descriptions are omitted. In this specification, the X-axis, Y-axis, and Z-axis are directions perpendicular to each other. The X-axis and Y-axis are horizontal directions, and the Z-axis is a vertical direction.

[0026] First, the substrate processing apparatus 10 will be described with reference to FIGS. 1 and 2. The substrate processing apparatus 10 is used to process a substrate W. The substrate W includes, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a glass substrate. Conductive films or insulating films can be formed on the surface of the semiconductor substrate or glass substrate, etc. Multiple films can be formed. The substrate W includes devices such as electronic circuits on its surface, including raised and recessed patterns (not shown). The substrate processing apparatus 10 includes, for example, a holding part 20, a rotating part 40, a first liquid supply part 50, a second liquid supply part 60, a third liquid supply part 70, a cup body 80, and a control part 90.

[0027] The holding part 20 is used to horizontally hold the substrate W. The substrate W includes an upper surface Wa and a lower surface Wb. The substrate W has an uneven pattern (not shown) on its upper surface Wa. As shown in FIG2, the holding part 20 includes: a rotating disk 21, which can be rotated by the rotating part 40; a first gripping part 22A for gripping the periphery of the substrate W; and a second gripping part 22B for gripping the periphery of the substrate W. The first gripping part 22A and the second gripping part 22B can rotate together with the rotating disk 21 while holding the substrate W.

[0028] The rotating disk 21 is disc-shaped and horizontally positioned below the substrate W. A hole is formed in the center of the rotating disk 21, and a liquid supply shaft 72 of the third liquid supply unit 70 is disposed within this hole. The liquid supply shaft 72 is disposed inside a cylindrical rotating shaft 41. The rotating shaft 41 extends downward from the center of the rotating disk 21 and is the rotation center line of the rotating disk 21.

[0029] As shown in Figures 4 and 5, the first gripping part 22A is movable between a gripping position on the periphery of the substrate W and a release position for releasing the substrate W. Three first gripping parts 22A are arranged at intervals along the periphery of the substrate W. The number of first gripping parts 22A can be three or more, for example, four. The three or more first gripping parts 22A are arranged at equal intervals along the periphery of the substrate W, which allows the load applied to the substrate W to be evenly distributed.

[0030] As shown in Figures 4 and 5, the second gripping part 22B can move independently of the first gripping part 22A between the gripping position and the release position. Three second gripping parts 22B are arranged at intervals along the periphery of the substrate W. The number of second gripping parts 22B can be three or more, for example, four. The three or more second gripping parts 22B are arranged at equal intervals along the periphery of the substrate W, which allows the load applied to the substrate W to be evenly distributed.

[0031] The first gripping part 22A and the second gripping part 22B can alternately grip the periphery of the substrate W, as will be explained in detail later. Furthermore, when changing grippers of the substrate W, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously to prevent it from falling. Additionally, the first gripping part 22A and the second gripping part 22B release the substrate during insertion and removal.

[0032] The first gripping part 22A and the second gripping part 22B are arranged alternately in three or more units along the periphery of the substrate W. When the substrate W is gripped by the first gripping part 22A only and when the substrate W is gripped by the second gripping part 22B only, the substrate W can be gripped in a balanced and good manner, and the center displacement of the substrate W can be suppressed.

[0033] As shown in FIG. 2, the holding part 20 includes: a first drive part 23A for moving the first gripping part 22A between a gripping position and a release position; and a first transmission part 24A for transmitting the driving force of the first drive part 23A to the first gripping part 22A. In this embodiment, the first drive part 23A and the first transmission part 24A can rotate together with the rotating disk 21. Centrifugal force can also be used to drive the first gripping part 22A, as will be explained in detail later. Multiple first drive parts 23A and multiple first transmission parts 24A can be provided. Multiple first gripping parts 22A can move independently.

[0034] Additionally, the holding unit 20 includes: a second drive unit 23B for independently moving the second gripping unit 22B and the first gripping unit 22A between a gripping position and a release position; and a second transmission unit 24B for transmitting the driving force of the second drive unit 23B to the second gripping unit 22B. In this embodiment, the second drive unit 23B and the second transmission unit 24B can rotate together with the rotating disk 21. Centrifugal force can also be used to drive the second gripping unit 22B. Multiple second drive units 23B and multiple second transmission units 24B can be provided. Multiple second gripping units 22B can move independently.

[0035] Next, the details of the first drive unit 23A and the first transmission unit 24A will be described with reference to FIG3. Furthermore, the second drive unit 23B is configured in the same manner as the first drive unit 23A, and the second transmission unit 24B is configured in the same manner as the first transmission unit 24A. Therefore, the second drive unit 23B and the second transmission unit 24B are omitted from the illustrations and descriptions.

[0036] The first drive unit 23A includes a slider 25 that is movable radially toward the substrate W. The radial direction of the substrate W is orthogonal to the rotation center line of the rotating disk 21. The slider 25 can rotate together with the rotating disk 21 and move radially outward toward the substrate W using centrifugal force. As a result, the first gripping unit 22A moves from a release position to a gripping position. The centrifugal force acting on the slider 25 can be used to make the first gripping unit 22A abut against the periphery of the substrate W.

[0037] The first drive unit 23A includes a spring 26 for applying force to the slider 25 radially outward toward the substrate W. The restoring force of the spring 26 allows the first gripping unit 22A to abut against the periphery of the substrate W. Unlike cases where the pressure of a fluid such as air is used instead of the restoring force of the spring 26, even if the pressure supply is interrupted due to a malfunction or other reasons during the rotation of the substrate W, the restoring force of the spring can continue to grip the substrate W, preventing the substrate W from flying off due to centrifugal force.

[0038] The first drive unit 23A includes a cylinder 27 for movably housing the slider 25. The cylinder 27 is fixed relative to the rotating disk 21 and can rotate with the rotating disk 21. The cylinder 27 guides the slider 25 radially on the substrate W. The slider 25 divides the internal space of the cylinder 27 into a first chamber R1 and a second chamber R2.

[0039] The first chamber R1 is sealed. The pressure in the first chamber R1 can be adjusted by the first pressure regulating mechanism 28. The first pressure regulating mechanism 28 and the first chamber R1 are connected by the first connecting line L1. The first connecting line L1 is formed, for example, in the rotating disk 21 and the rotating shaft 41, and is connected to the first pressure regulating mechanism 28 via a rotary joint (not shown).

[0040] The first pressure regulating mechanism 28 includes a pressure boosting line 28a for increasing the pressure in the first chamber R1. The pressure boosting line 28a includes a switching valve V1, a flow controller F1, and a pressure controller P1. The switching valve V1 is used to open and close the flow path of the pressure boosting line 28a. The flow controller F1 is used to control the flow rate of fluids such as air supplied to the first chamber R1 when the pressure in the first chamber R1 is increased. The pressure controller P1 is used to control the pressure in the first chamber R1 when the pressure in the first chamber R1 is increased.

[0041] Additionally, the first pressure regulating mechanism 28 includes a pressure reducing line 28b for reducing the pressure in the first chamber R1. The pressure reducing line 28b is equipped with a switching valve V2, a flow controller F2, and a pressure controller P2. The switching valve V2 is used to open and close the flow path of the pressure reducing line 28b. The flow controller F2 is used to control the flow rate of fluids such as air discharged from the first chamber R1 when the pressure in the first chamber R1 is reduced. The pressure controller P2 is used to control the pressure in the first chamber R1 when the pressure in the first chamber is reduced.

[0042] Unlike chamber 1 R1, chamber 2 R2 is not sealed but open. The pressure in chamber 2 R2 is equal to the external air pressure and is maintained at a constant level. In chamber 2 R2, spring 26 is configured in a state of elastic deformation, for example, in a compressed state. Spring 26 can use its restoring force to apply a force to slider 25 radially outward of substrate W. Slider 25 is forced in the direction in which the volume of chamber 1 R1 decreases.

[0043] When the first pressure regulating mechanism 28 supplies fluid such as air to the first chamber R1, causing the pressure in the first chamber R1 to rise, the sliding member 25 can move against the restoring force of the spring 26. As a result, the first gripping part 22A can move from the gripping position to the release position, disengaging from the substrate W. The load applied to the substrate W by the stress release at this time is determined by the fluid supply pressure and supply speed. If the control unit 90 controls the pressure controller P1 or the flow controller F1, and controls the driving force or driving speed, the load on the substrate W can be suppressed.

[0044] On the other hand, when the first pressure regulating mechanism 28 discharges fluid such as air from the first chamber R1, reducing the pressure in the first chamber R1, the restoring force of the spring 26 can push the sliding member 25 back. As a result, the first gripping part 22A can move from the release position to the gripping position and collide with the substrate W. The collision that occurs at this time is determined by the restoring force of the spring, as well as the discharge pressure and discharge speed of the fluid. If the control unit 90 controls the pressure controller P2 or the flow controller F2, and controls the driving force or driving speed, the collision can be suppressed.

[0045] According to this embodiment, the restoring force of the spring 26 is used to move the first gripping part 22A from the release position to the gripping position, instead of using the pressure of the fluid. Unlike the case where the pressure of the fluid is used, fail-safe operation can be achieved. That is, even if the pressure supply is interrupted due to a malfunction or other reasons during the rotation of the substrate W, the restoring force of the spring can be used to continue gripping the substrate W, preventing the substrate W from flying out due to centrifugal force.

[0046] The first drive unit 23A includes a rod member 29 that is movable in the horizontal direction along with the slider 25. The rod member 29 is disposed on one side of the slider 25, passes through the first chamber R1 of the cylinder body 27, and extends out of the cylinder body 27. The long side of the rod member 29 is in the direction of movement of the slider 25.

[0047] The first transmission unit 24A includes a connecting rod 30, one end of which is rotatably connected to a rod member 29, and the other end of which is rotatably connected to a first gripping unit 22A. The connecting rod 30 and the rod member 29 are capable of bending and extending about a first pin 31. Additionally, the connecting rod 30 and the first gripping unit 22A are capable of bending and extending about a second pin 32. The first pin 31 and the second pin 32 are horizontally arranged. The connecting rod 30 is capable of swinging in a vertical plane, thereby causing the first gripping unit 22A to swing. The first gripping unit 22A is, for example, an L-shaped vertical plate.

[0048] The first gripping part 22A can swing around the third pin 33, which is held horizontally by the rotating disk 21, thereby swinging in the vertical plane. Therefore, the first gripping part 22A can also move in the vertical direction. As a result, the range of liquid that is horizontally thrown from the substrate W and contacts the first gripping part 22A can be changed, allowing for cleaning of a wider area of ​​the first gripping part 22A with the liquid. Cleaning of the first gripping part 22A can be performed while the substrate W is gripped by the second gripping part 22B.

[0049] As shown in Figure 1, the rotating part 40 is used to rotate the holding part 20. The rotating part 40 includes, for example, a rotating shaft 41 extending downward from the center of the rotating disk 21 of the holding part 20; a rotary motor 42 for rotating the rotating shaft 41; and a belt 43 for transmitting the rotational driving force of the rotary motor 42 to the rotating shaft 41. The rotating shaft 41 is cylindrical, and a liquid supply shaft 72 is disposed inside the rotating shaft 41. The liquid supply shaft 72 does not rotate with the rotating shaft 41.

[0050] The first liquid supply unit 50 supplies liquid to the upper surface Wa of the substrate W held by the holding unit 20. The first liquid supply unit 50 includes, for example, a nozzle 51 for discharging liquid; a moving mechanism 52 for moving the nozzle 51 radially in the substrate W; and a supply line 53 for supplying liquid to the nozzle 51. The nozzle 51 is positioned above the holding unit 20 and is capable of discharging liquid downwards.

[0051] The moving mechanism 52 includes, for example, a rotating arm 52a for holding the nozzle 51, and a rotating mechanism 52b for rotating the rotating arm 52a. The rotating mechanism 52b can also serve as a lifting mechanism for raising and lowering the rotating arm 52a. The rotating arm 52a is horizontally configured, and the nozzle 51 can be held at one end along its long side, and the rotating arm 52a can rotate about a rotation axis extending downward from the other end along its long side. Alternatively, the moving mechanism 52 may have a guide rail and a linear motion mechanism instead of the rotating arm 52a and the rotating mechanism 52b. The guide rail is horizontally configured, and the linear motion mechanism allows the nozzle 51 to move along the guide rail.

[0052] The supply line 53 includes, for example, a common line 53a and multiple individual lines 53b connected to the common line 53a. The individual lines 53b are configured according to the type of liquid. Examples of liquid types include chemical solutions and rinsing solutions. Chemical solutions can be acidic, alkaline, or neutral. Acidic chemical solutions include, for example, DHF (diluted hydrofluoric acid). Alkaline chemical solutions include, for example, SC1 (an aqueous solution containing hydrogen peroxide and ammonium hydroxide). Neutral chemical solutions include, for example, functional water such as ozone water. Rinsing solutions include, for example, DIW (deionized water). Midway through each individual line 53b, a switch valve 55 for opening and closing the liquid flow path and a flow controller 56 for controlling the liquid flow rate are provided.

[0053] Furthermore, the medicine and rinsing fluid are discharged from one nozzle 51 in Figure 1, but they can also be discharged from different nozzles 51. In the case of multiple nozzles 51, a supply line 53 can be provided for each nozzle 51.

[0054] The second liquid supply unit 60, like the first liquid supply unit 50, supplies liquid to the upper surface Wa of the substrate W held by the holding unit 20. The second liquid supply unit 60 includes, for example, a nozzle 61 for discharging liquid; a moving mechanism 62 for moving the nozzle 61 radially in the substrate W; and a supply line 63 for supplying liquid to the nozzle 61. The nozzle 61 is positioned above the holding unit 20 and is capable of discharging liquid downwards. The nozzle 61 of the second liquid supply unit 60 and the nozzle 51 of the first liquid supply unit 50 are capable of moving independently.

[0055] The moving mechanism 62 includes, for example, a rotating arm 62a for holding the nozzle 61, and a rotating mechanism 62b for rotating the rotating arm 62a. The rotating mechanism 62b can also serve as a lifting mechanism for raising and lowering the rotating arm 62a. The rotating arm 62a is horizontally configured, and the nozzle 61 can be held at one end along its long side, and the rotating arm 62a can rotate about a rotation axis extending downward from the other end along its long side. Alternatively, the moving mechanism 62 may have a guide rail and a linear motion mechanism instead of the rotating arm 62a and the rotating mechanism 62b. The guide rail is horizontally configured, and the linear motion mechanism allows the nozzle 61 to move along the guide rail.

[0056] Supply line 63 is used to supply drying fluid to nozzle 61. The drying fluid can be a liquid with a lower surface tension compared to the rinsing fluid. Examples of drying fluids include organic solvents such as IPA (isopropanol). After replacing the liquid film on the upper surface Wa of the substrate W with the liquid film of the rinsing fluid, the substrate W can be dried. Collapse of the uneven pattern caused by surface tension during the drying of the substrate W can be suppressed.

[0057] The raised and recessed pattern is pre-formed on the upper surface Wa of the substrate W. The raised and recessed pattern may not be pre-formed on the lower surface Wb of the substrate W. Therefore, the drying liquid only needs to be supplied to the upper surface Wa of the substrate W, and does not need to be supplied to the lower surface Wb. Midway through the supply line 63, a switching valve 65 for opening and closing the flow path of the drying liquid and a flow controller 66 for controlling the flow rate of the drying liquid are provided.

[0058] In this embodiment, the supply positions of the rinsing fluid and the drying fluid can be moved independently, ensuring that the liquid film is not interrupted when the liquid film of the rinsing fluid is replaced by the liquid film of the drying fluid. Specifically, with the supply position of the drying fluid fixed at the center of the upper surface Wa of the substrate W, the supply position of the rinsing fluid is moved radially outward from the substrate W. For this purpose, a second liquid supply unit 60 and a first liquid supply unit 50 are provided.

[0059] However, depending on the size and shape of the embossed pattern on the substrate W, the material of the substrate W, etc., there are cases where, with the supply position of the drying liquid fixed at the center of the upper surface Wa of the substrate W, the supply position of the rinsing liquid may not move radially outward from the substrate W. In this case, the second liquid supply unit 60 may be omitted, and the drying liquid may be discharged from the nozzle 51 of the first liquid supply unit 50.

[0060] The third liquid supply unit 70 differs from the first liquid supply unit 50 and the second liquid supply unit 60 in that it supplies liquid to the lower surface Wb of the substrate W held by the holding unit 20. As shown in FIG2, the third liquid supply unit 70 includes a plurality of nozzles 71A, 71B, and 71C disposed opposite to the center of the lower surface of the substrate W held by the holding unit 20. The center of the lower surface is, for example, the area within 50 mm from the center of the lower surface.

[0061] Multiple nozzles 71A, 71B, and 71C are formed on the upper surface of the liquid supply shaft 72, each capable of discharging fluid upwards. Nozzle 71A, for example, can discharge medicinal liquid and rinsing liquid upwards. Nozzle 71B, for example, can discharge rinsing liquid upwards. Nozzle 71C, for example, can discharge gas such as N2 gas upwards.

[0062] The third liquid supply unit 70 has a liquid supply shaft 72. The liquid supply shaft 72 is disposed inside the rotating shaft 41 and does not rotate with the rotating shaft 41. Multiple supply lines 73A, 73B, and 73C connected to multiple nozzles 71A, 71B, and 71C are provided in the liquid supply shaft 72.

[0063] Supply line 73A is connected to nozzle 71A for supplying liquid medicine and rinsing fluid to nozzle 71A. Supply line 73A includes, for example, a common line 73Aa; and multiple individual lines 73Ab connected to the common line 73Aa. Individual lines 73Ab are provided according to the type of liquid. Midway through an individual line 73Ab, a switching valve 75A for opening and closing the liquid flow path and a flow controller 76A for controlling the liquid flow rate are provided.

[0064] Similarly, supply line 73B is connected to nozzle 71B for supplying flushing fluid to nozzle 71B. Midway through supply line 73B, a switching valve 75B for opening and closing the flow path of the flushing fluid, and a flow controller 76B for controlling the flow rate of the flushing fluid are provided. Furthermore, the flushing fluid supply source for supply line 73B and the flushing fluid supply source for supply line 73A are shown as a shared source in Figure 2; however, different supply sources may also be provided.

[0065] In addition, the supply line 73C is connected to the nozzle 71C for supplying gases such as N2 gas to the nozzle 71C. Midway through the supply line 73C, there is a switch valve 75C for opening and closing the gas flow path, and a flow controller 76C for controlling the gas flow rate.

[0066] As shown in Figure 1, the cup body 80 is used to recover various liquids supplied to the substrate W. The cup body 80 includes a cylindrical portion 81, a bottom cover portion 82, and an inclined portion 83. The cylindrical portion 81 has an inner diameter larger than the diameter of the substrate W and is arranged vertically. The bottom cover portion 82 closes the opening at the lower end of the cylindrical portion 81. The inclined portion 83 is formed around the upper circumference of the cylindrical portion 81 and slopes upwards towards the radially inward side of the cylindrical portion 81. The bottom cover portion 82 is provided with a drain pipe 84 for draining liquid accumulated inside the cup body 80 and an exhaust pipe 85 for venting gas accumulated inside the cup body 80.

[0067] The control unit 90 controls the holding unit 20, the rotating unit 40, the first liquid supply unit 50, the second liquid supply unit 60, and the third liquid supply unit 70. The control unit 90 is, for example, a computer, including a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory card. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 10. The control unit 90 controls the operation of the substrate processing apparatus 10 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0068] Next, the substrate processing method will be described with reference to Figures 6 and 7. Each step S1 to S6 shown in Figure 6 can be performed under the control of the control unit 90. Furthermore, in steps S2 to S5, the substrate W is held horizontally and can rotate about the vertical rotation axis 41. Additionally, in steps S2 to S5, the nozzle 71C of the third liquid supply unit 70 continuously discharges gas.

[0069] First, in step S1, a conveying device (not shown) feeds the substrate W into the substrate processing apparatus 10. After placing the substrate W on the holding part 20, the conveying device withdraws from the substrate processing apparatus 10. The holding part 20 receives the substrate W from the conveying device and holds the substrate W. As shown in FIG7, for example, the first gripping part 22A grips the substrate W. The second gripping part 22B may not grip the substrate W.

[0070] Next, in step S2, a chemical solution is supplied to both the upper surface Wa and the lower surface Wb of the substrate W. The chemical solution is supplied from the nozzle 51 of the first liquid supply unit 50 to the center of the upper surface of the substrate W, and centrifugal force is used to wet and spread it to the entire upper surface, thus treating the entire upper surface. Simultaneously, a chemical solution is supplied from the nozzle 71A of the third liquid supply unit 70 to the center of the lower surface of the substrate W, and centrifugal force is used to wet and spread it to the entire lower surface, thus treating the entire lower surface.

[0071] In step S2 above, as shown in FIG7, the first gripping part 22A and the second gripping part 22B alternately grip the substrate W. For example, firstly, with only the first gripping part 22A gripping the substrate W, the chemical solution is supplied to the substrate W to etch it. The components dissolved from the substrate W into the chemical solution are ejected from the substrate W along with the chemical solution and recovered by the cup body 80.

[0072] The first gripping part 22A abuts against the substrate W. Liquid accumulates near the first gripping part 22A, hindering etching. Therefore, the gripping of the substrate W is changed. First, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously. Then, only the second gripping part 22B grips the substrate W.

[0073] With the substrate W held only by the second gripping part 22B, the etching solution is supplied to the substrate W. No liquid accumulation occurs near the first gripping part 22A, therefore etching can proceed. Thus, uneven etching can be suppressed. During the etching process of the substrate W, the time for the substrate W to be held only by the first gripping part 22A is approximately the same as the time for the substrate W to be held only by the second gripping part 22B.

[0074] According to this embodiment, in order to suppress uneven processing of the substrate W, the first gripping portion 22A and the second gripping portion 22B are used to alternately grip the substrate W. Therefore, unlike Patent Document 1, it is not necessary to create a difference in the rotational speed between the substrate W and the holding portion 20. According to this embodiment, the first gripping portion 22A and the second gripping portion 22B can rotate together with the holding portion 20. Therefore, wear between the substrate W and the holding portion 20 can be suppressed, and the generation of particles caused by wear can be suppressed. In addition, during the supply of the drug solution, the rotational speed of the holding portion 20 can be accelerated or decelerated, unlike Patent Document 1, and the rotational speed of the substrate W can be maintained at a constant value.

[0075] As shown in Figure 7, when the etching of the substrate W is completed, the substrate W is re-grabbed. Specifically, firstly, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously. Then, only the first gripping part 22A grips the substrate W. This allows the stress distribution applied to the substrate W to return to its original distribution.

[0076] After the substrate W is etched, a chemical solution is also supplied to the substrate W. The first gripping portion 22A and the second gripping portion 22B can be rinsed with the chemical solution, which contains almost no impurities such as dissolution components from the substrate W, thus removing foreign matter. However, since the first gripping portion 22A is in contact with the substrate W, liquid accumulates near the first gripping portion 22A, hindering the removal of foreign matter.

[0077] Therefore, the substrate W is gripped again. First, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously. Then, only the second gripping part 22B grips the substrate W. No liquid accumulates near the first gripping part 22A, so foreign matter can be removed. Therefore, uneven cleaning can be suppressed. During the cleaning process of the first gripping part 22A and the second gripping part 22B, the time for the first gripping part 22A to grip the substrate W and the time for the second gripping part 22B to grip the substrate W are approximately the same.

[0078] While the second gripping part 22B grips the substrate W, the first gripping part 22A can be temporarily stopped in the release position. However, it is also possible to temporarily stop the first gripping part 22A in either an intermediate position between the release position and the gripping position, or in the release position. In the latter case, the range of the liquid that is horizontally thrown off the substrate W and comes into contact with the first gripping part 22A can be changed. Therefore, a wider range of the first gripping part 22A can be cleaned using liquid.

[0079] Similarly, while only the first gripping part 22A grips the substrate W, the second gripping part 22B can be temporarily stopped in the release position. However, it is also possible to temporarily stop the second gripping part 22B in either an intermediate position between the release position and the gripping position, or in the release position. In the latter case, the range of the liquid that is horizontally thrown off the substrate W and comes into contact with the second gripping part 22B can be changed. Therefore, a wider range of the second gripping part 22B can be cleaned using liquid.

[0080] After cleaning the first gripping part 22A and the second gripping part 22B, as shown in Figure 7, the substrate W can be gripped again. The stress distribution applied to the substrate W can be restored to its original distribution before step S3 begins.

[0081] Next, in step S3, rinsing fluid is supplied to both the upper surface Wa and the lower surface Wb of the substrate W, replacing the liquid film of the drug solution formed in step S2 with a liquid film of rinsing fluid. The rinsing fluid is supplied from nozzle 51 of the first liquid supply unit 50 to the center of the upper surface of the substrate W, and spreads to the entire upper surface using centrifugal force, washing away the drug solution remaining on the upper surface Wa, forming a liquid film of rinsing fluid on the upper surface Wa. Simultaneously, rinsing fluid is supplied from nozzle 71A of the third liquid supply unit 70 to the center of the lower surface of the substrate W, and spreads to the entire lower surface using centrifugal force, washing away the drug solution remaining on the lower surface Wb, forming a liquid film of rinsing fluid on the upper surface Wb.

[0082] In step S3 above, as shown in FIG7, the first gripping part 22A and the second gripping part 22B alternately grip the substrate W. For example, firstly, with only the first gripping part 22A gripping the substrate W, rinsing fluid is supplied to the substrate W to wash away the residual medicine on the substrate W.

[0083] The first gripping part 22A abuts against the substrate W. Liquid accumulates near the first gripping part 22A, hindering the replacement of the drug solution with the rinsing solution. Therefore, a change in gripping of the substrate W is performed. Specifically, firstly, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously; then, only the second gripping part 22B grips the substrate W.

[0084] With only the second gripping part 22B gripping the substrate W, rinsing fluid is supplied to the substrate W. No fluid accumulation occurs near the first gripping part 22A, thus allowing for the replacement of the drug solution with the rinsing fluid. Therefore, uneven replacement can be suppressed.

[0085] Then, as shown in Figure 7, the substrate W can be changed and held again before step S4 begins. This allows the stress distribution applied to the substrate W to return to its original distribution.

[0086] Next, in step S4, a drying liquid is supplied to the upper surface Wa of the substrate W, replacing the liquid film of the rinsing liquid formed in step S3 with a liquid film of the drying liquid. The drying liquid is supplied from the nozzle 61 of the second liquid supply unit 60 to the center of the upper surface of the substrate W, and wets and spreads to the entire upper surface by centrifugal force, washing away the rinsing liquid remaining on the upper surface Wa, and forming a liquid film of the drying liquid on the upper surface Wa.

[0087] In step S4 above, as shown in FIG7, the first gripping part 22A and the second gripping part 22B alternately grip the substrate W. For example, firstly, with only the first gripping part 22A gripping the substrate W, a drying solution is supplied to the substrate W to replace the rinsing solution remaining on the substrate W.

[0088] The first gripping part 22A abuts against the substrate W. Liquid accumulates near the first gripping part 22A, hindering the displacement from the rinsing liquid to the drying liquid. Therefore, a change in gripping of the substrate W is performed. Specifically, firstly, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously; then, only the second gripping part 22B grips the substrate W.

[0089] With the substrate W held only by the second gripping part 22B, a drying solution is supplied to the substrate W. No liquid accumulation occurs near the first gripping part 22A, thus allowing for the replacement of the rinsing solution with the drying solution. Therefore, uneven replacement can be suppressed.

[0090] Then, as shown in Figure 7, the substrate W can be changed and held again before step S5 begins. This allows the stress distribution applied to the substrate W to return to its original distribution.

[0091] Next, in step S5, the substrate W is rotated while being held horizontally to dry it. No liquid is supplied to the substrate W, and any remaining drying liquid on the substrate W is shaken off, thus drying the substrate W.

[0092] In step S5 above, as shown in FIG7, the first gripping part 22A and the second gripping part 22B alternately grip the substrate W. For example, firstly, with only the first gripping part 22A gripping the substrate W, the substrate W is rotated, and the drying liquid remaining on the substrate W is shaken off.

[0093] The first gripping part 22A abuts against the substrate W. Liquid accumulates near the first gripping part 22A, and drying liquid easily remains. Therefore, the gripping of the substrate W is changed. Specifically, firstly, both the first gripping part 22A and the second gripping part 22B grip the substrate W simultaneously. Then, only the second gripping part 22B grips the substrate W.

[0094] With the substrate W held only by the second gripping part 22B, the substrate W is rotated, and the drying liquid remaining on the substrate W is shaken off. No liquid accumulation occurs near the first gripping part 22A, thus drying can proceed. Therefore, uneven drying can be suppressed.

[0095] Next, in step S6, the holding unit 20 releases the substrate W from the holding unit 20. Then, a transport device (not shown) receives the substrate W from the holding unit 20 and sends the received substrate W to the outside of the substrate processing apparatus 10. After that, the current processing ends.

[0096] The following description refers to a modified example of the changing gripping action of the substrate W, with reference to FIG8. In the above embodiment, as shown in FIG7, the control unit 90 moves the three first gripping parts 22A-1, 22A-2, and 22A-3 simultaneously. In this modified example, as shown in FIG8, the control unit 90 moves the three first gripping parts 22A-1, 22A-2, and 22A-3 in a predetermined order. The differences will be explained below.

[0097] For example, while the substrate W is held by the three second gripping parts 22B-1, 22B-2, and 22B-3, the control unit 90 can move the three first gripping parts 22A-1, 22A-2, and 22A-3 from the release position to the gripping position in a predetermined order. This allows the total load applied to the substrate W to gradually increase, thus suppressing damage to the substrate W.

[0098] Furthermore, while the substrate W is held by the three second gripping parts 22B-1, 22B-2, and 22B-3, the control unit 90 can move the three first gripping parts 22A-1, 22A-2, and 22A-3 from the gripping position to the release position in a predetermined order. This allows the total load applied to the substrate W to gradually decrease, thus suppressing damage to the substrate W.

[0099] Furthermore, although not shown, the control unit 90 can also move the three second gripping units 22B-1, 22B-2, and 22B-3 from the release position to the gripping position, or from the gripping position to the release position, in a predetermined order while the substrate W is held by the three first gripping units 22A-1, 22A-2, and 22A-3.

[0100] Next, the holding part 20 of the first modified example will be described with reference to FIG9. The first drive part 23A of the above embodiment includes a spring 26, while the first drive part 23A of this modified example does not include a spring 26. In this modified example, the first drive part 23A utilizes the pressure of a fluid such as air instead of the restoring force of the spring 26 to move the first gripping part 22A from the release position to the gripping position. The differences will be mainly described below.

[0101] The first drive unit 23A of this modification includes a slider 25 and a cylinder 27. The slider 25 divides the internal space of the cylinder 27 into a first chamber R1 and a second chamber R2. Both the first chamber R1 and the second chamber R2 are sealed. The pressure in the first chamber R1 can be adjusted by a first pressure regulating mechanism 28. On the other hand, the pressure in the second chamber R2 can be adjusted by a second pressure regulating mechanism 34. The second pressure regulating mechanism 34 and the second chamber R2 are connected by a second connecting line L2. The second connecting line L2 is formed independently of the first connecting line L1 in the rotating disk 21 and the rotating shaft 41, and is connected to the second pressure regulating mechanism 34 via a rotary joint (not shown).

[0102] The second pressure regulating mechanism 34 includes a pressure boosting line 34a for increasing the pressure in the second chamber R2. The pressure boosting line 34a includes a switching valve V3, a flow controller F3, and a pressure controller P3. The switching valve V3 is used to open and close the flow path of the pressure boosting line 34a. The flow controller F3 is used to control the flow rate of fluids such as air supplied to the second chamber R2 when the pressure in the second chamber R2 is increased. The pressure controller P3 is used to control the pressure in the second chamber R2 when the pressure in the second chamber R2 is increased.

[0103] Additionally, the second pressure regulating mechanism 34 includes a pressure reducing line 34b for reducing the pressure in the second chamber R2. The pressure reducing line 34b includes a switching valve V4, a flow controller F4, and a pressure controller P4. The switching valve V4 is used to open and close the flow path of the pressure reducing line 34b. The flow controller F4 is used to control the flow rate of fluids such as air discharged from the second chamber R2 when the pressure in the second chamber R2 is reduced. The pressure controller P4 is used to control the pressure in the second chamber R2 when the pressure in the second chamber is reduced.

[0104] When the second pressure regulating mechanism 34 increases the pressure in the second chamber R2 and the first pressure regulating mechanism 28 decreases the pressure in the first chamber R1, the sliding member 25 can move radially outward from the substrate W. As a result, the first gripping part 22A can move from the release position to the gripping position and collide with the substrate W. The collision that occurs at this time is determined by the fluid pressure and flow rate. If the control unit 90 controls the pressure controllers P3 and P4 or the flow controllers F3 and F4, and controls the driving force or driving speed, the collision can be suppressed.

[0105] On the other hand, when the second pressure regulating mechanism 34 reduces the pressure in the second chamber R2 and the first pressure regulating mechanism 28 increases the pressure in the first chamber R1, the sliding member 25 can move radially inward toward the substrate W. As a result, the first gripping part 22A can move from the gripping position to the release position and move away from the substrate W. The load applied to the substrate W by the stress release at this time is determined by the fluid pressure and flow rate. If the control unit 90 controls the pressure controllers P3 and P4 or the flow controllers F3 and F4 to control the driving force or driving speed, the load on the substrate W can be suppressed.

[0106] Next, the retaining part 20 of the second modification will be described with reference to FIG10. The main differences will be explained below. The first drive part 23A of this modification includes: a lifting rod 35 for mounting the connecting part of the first gripping part 22A and the connecting rod 30; an elastic membrane 36 for supporting the lower end of the lifting rod 35; and a cylinder 37, which contains an upper chamber R3 and a lower chamber R4 divided by the elastic membrane 36. The cylinder 37 is fixed relative to the rotating disk 21. The lifting rod 35 passes through the upper chamber R3 of the cylinder 37 and extends upwards from the cylinder 37.

[0107] The upper chamber R3 of cylinder 37 is not sealed but open. The pressure in the upper chamber R3 is equal to the external air pressure and is maintained at a constant level. On the other hand, the lower chamber R4 of cylinder 37 is sealed. The pressure in the lower chamber R4 can be adjusted by the third pressure regulating mechanism 38. The third pressure regulating mechanism 38 and the lower chamber R4 are connected by the third connecting line L3. The third connecting line L3 is formed in the rotary disk 21 and the rotary shaft 41 and is connected to the third pressure regulating mechanism 38 via a rotary joint (not shown).

[0108] The third pressure regulating mechanism 38 includes a booster line 38a for increasing the pressure in the lower chamber R4. The booster line 38a includes a switching valve V5, a flow controller F5, and a pressure controller P5. The switching valve V5 is used to open and close the flow path of the booster line 38a. The flow controller F5 is used to control the flow rate of fluids such as air supplied to the lower chamber R4 when the lower chamber R4 is pressurized. The pressure controller P5 is used to control the pressure of the lower chamber R4 when the lower chamber R4 is pressurized.

[0109] Additionally, the third pressure regulating mechanism 38 includes a pressure reducing line 38b for reducing the pressure in the lower chamber R4. The pressure reducing line 38b includes a switching valve V6, a flow controller F6, and a pressure controller P6. The switching valve V6 is used to open and close the flow path of the pressure reducing line 38b. The flow controller F6 is used to control the flow rate of fluids such as air discharged from the lower chamber R4 when the pressure in the lower chamber R4 is reduced. The pressure controller P6 is used to control the pressure in the lower chamber R4 when the pressure in the lower chamber is reduced.

[0110] When the third pressure regulating mechanism 38 supplies fluid such as air to the lower chamber R4, causing the pressure in the lower chamber R4 to rise, the elastic diaphragm 36 deforms into an upwardly convex surface, enabling the third pin 33 to rise and the sliding member 25 to move radially inward toward the substrate W against the restoring force of the spring 26. As a result, the first gripping part 22A can move from the gripping position to the release position, disengaging from the substrate W. The load applied to the substrate W by the stress release at this time is determined by the fluid supply pressure and supply speed. If the control unit 90 controls the pressure controller P5 or the flow controller F5, and controls the driving force or driving speed, the load on the substrate W can be suppressed.

[0111] On the other hand, when the third pressure regulating mechanism 38 discharges fluid such as air from the lower chamber R4, reducing the pressure in the lower chamber R4, the elastic diaphragm 36 deforms into a downwardly convex surface, which in turn causes the third pin 33 to descend. Furthermore, the restoring force of the spring 26 pushes the sliding member 25 radially outward from the substrate W. As a result, the first gripping part 22A moves from the release position to the gripping position and contacts the substrate W. The resulting collision is determined by the restoring force of the spring, as well as the discharge pressure and discharge speed of the fluid. If the control unit 90 controls the pressure controller P6 or the flow controller F6, and controls the driving force or driving speed, the collision can be suppressed.

[0112] The embodiments of the substrate processing apparatus and substrate processing method of the present invention have been described above, but the present invention is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. These, of course, also fall within the technical scope of the present invention.

[0113] For example, the solution in the above embodiments is an etching solution, but it can also be a resist solution.

Claims

1. A substrate processing apparatus, characterized in that, include: A holding section used to hold the substrate horizontally; A rotating part for rotating the holding part; A liquid supply unit for supplying liquid to the substrate held horizontally by the holding part; The control unit for controlling the holding part, the rotating part, and the liquid supply part, the holding part comprising: a rotating disk rotatable by the rotating part; a first gripping part rotatable with the rotating disk and movable between a gripping position gripping the periphery of the substrate and a release position releasing the substrate; and a second gripping part rotatable with the rotating disk and movable independently of the first gripping part between the gripping position and the release position, the first gripping part and the second gripping part each being movable by the rotating disk. The control unit can swing the holding part around the horizontal pin, thereby moving between the release position and the gripping position. During the period when the holding part is rotated by the rotating part and the liquid is supplied to the substrate held by the holding part, while the substrate is gripped by one of the first gripping part and the second gripping part, the control unit can swing the other gripping part along the radial direction of the substrate, and control its swing angle or position in multiple stages to change the range of cleaning of the other gripping part with the liquid.

2. The substrate processing apparatus according to claim 1, characterized in that: The control unit is capable of temporarily stopping the other gripping part of the first gripping part and the release position at both the intermediate position between the release position and the gripping position, while the substrate is being held by one of the gripping parts, during the period when the holding part rotates the holding part and the liquid is supplied to the substrate held by the holding part, and while the substrate is being held by one of the gripping parts.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that: The control unit is able to control the swing angle and swing speed of the first gripping part and the second gripping part in accordance with the amount of liquid supplied and the rotational speed of the substrate during the period when the holding part is rotated by the rotating part and the liquid is supplied to the substrate held by the holding part.

4. A substrate processing method comprising the step of supplying liquid to the substrate while rotating a holding portion that horizontally holds the substrate, the substrate processing method characterized in that: the holding portion comprises: Rotating disk; The first gripping part is rotatable with the rotating disk and can move between a gripping position that grips the periphery of the substrate and a release position that releases the substrate. The substrate processing method includes a second gripping part, which is rotatable with the rotating disk and can move independently of the first gripping part between the gripping position and the release position. The first and second gripping parts are each oscillating about a horizontal pin held by the rotating disk, thereby moving between the release position and the gripping position. The substrate processing method further includes: during the supply of liquid to the substrate, while the substrate is gripped by one of the first and second gripping parts, corresponding to the amount of liquid supplied, temporarily stopping the other gripping part in multiple stages between an intermediate position between the release position and the gripping position, thereby cleaning a wider area of ​​the other gripping part.

5. The substrate processing method according to claim 4, characterized in that: During the supply of the liquid to the substrate, a pharmaceutical solution, a cleaning solution, and a drying solution are supplied sequentially as the liquid. During the supply of each of the liquids, the periphery of the substrate is alternately gripped by the first gripping part and the second gripping part, and the gripping part of the first gripping part and the second gripping part that is not gripping the substrate is oscillating.

6. The substrate processing method according to claim 4 or 5, characterized in that: The substrate processing method includes the following steps: when cleaning the first gripping portion and the second gripping portion around the periphery of the substrate using the liquid supplied to the substrate, before starting the next processing step, the stress distribution applied to the substrate is restored to its original distribution by changing the gripping of the substrate using the first gripping portion and the second gripping portion.

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