Integrated multi-way valve assembly

Abstract

A multi-ported valve assembly for a substrate processing system includes a manifold block and a plurality of valves mounted to the manifold block. The manifold block includes N first inputs connected to N sources of N vaporization precursors, where N is an integer greater than 1; an outlet connectable to a showerhead of the processing chamber; and a plurality of manifolds enclosed within the manifold block. The valve is coupled to N first inputs through manifolds in a manifold block. The valves are configured to supply the N vaporization precursors through respective supply manifolds in the manifold block. The respective supply manifolds are connected to output manifolds in the manifold block. The output manifold includes the outlet to supply one or more of the N vaporization precursors to the showerhead.

Description

Integrated multi-way valve assembly

[0001] Cross-Reference to Related Applications This application claims priority to U.S. Provisional Application No. 63 / 540,970, filed September 28, 2023. The entire contents of the foregoing application are incorporated herein by reference. Technical Field

[0002] This disclosure relates generally to substrate processing systems, and more specifically to integrated multi-way valve assemblies for substrate processing systems. Background Technology

[0003] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors within the scope described in this background section, as well as aspects of the specification that could not be identified as prior art at the time of filing, are neither express nor implied admissions of prior art to this disclosure.

[0004] Substrate processing systems (also known as tools) typically contain one or more processing chambers. A substrate is arranged on a substrate support within the processing chamber for processing. In some applications, such as chemical vapor deposition (CVD), one or more gases and vaporization precursors are supplied through a nozzle into the processing chamber to process the substrate. In some applications, such as plasma-enhanced CVD (PECVD), plasma is generated by supplying radio frequency (RF) power to the nozzle or substrate support to process the substrate. Summary of the Invention

[0005] A multi-port valve assembly for a substrate processing system includes a manifold block and a plurality of valves mounted to the manifold block. The manifold block includes N first inputs connected to N sources of N vaporization precursors, where N is an integer greater than 1; an outlet for a nozzle connectable to a processing chamber; and a plurality of manifolds enclosed within the manifold block. The valves are coupled to the N first inputs via manifolds in the manifold block. The valves are configured to supply the N vaporization precursors via respective supply manifolds in the manifold block. Each supply manifold is connected to an output manifold in the manifold block. The output manifold includes an outlet for supplying one or more of the N vaporization precursors to the nozzle.

[0006] In an additional feature, the manifold block and the plurality of valves are integrated into a single integrated component.

[0007] In an additional feature, the connection between the supply manifold and the output manifold, as well as the outlet of the output manifold, are configured to prevent cross-contamination of the N vaporization precursors.

[0008] In an additional feature, the manifold block includes N second input terminals connected to multiple gas sources. The valve is coupled to the N second input terminals via a manifold in the manifold block. The valve is configured to supply one or more gases from the gas sources via the supply manifold.

[0009] In an additional feature, the valve is configured to supply the N vaporization precursors and one or more gases to the output manifold via a supply manifold.

[0010] In an additional feature, the valve is configured to supply one or more gases to the output manifold via the supply manifold, regardless of whether the N vaporization precursors are supplied to the output manifold via the supply manifold, in order to prevent cross-contamination of the N vaporization precursors.

[0011] In an additional feature, the one or more gases are identical.

[0012] In an additional feature, the manifold block includes N output terminals connected to the exhaust system. The valve system is coupled to the N output terminals via manifolds in the manifold block. The valves are configured to divert N vaporization precursors to the exhaust system via the N output terminals.

[0013] In an additional feature, the valve is configured to supply one or more gases to the output manifold via the supply manifold, regardless of whether the N vaporization precursors are diverted to the exhaust system, in order to prevent cross-contamination of the N vaporization precursors.

[0014] In an additional feature, the supply manifold, output manifold, and outlet are configured as detachable sub-assemblies.

[0015] As an additional feature, the manifold block contains multiple heaters configured to heat their respective supply manifolds.

[0016] Among the additional features, the manifold block contains a heater configured to heat the output manifold.

[0017] In an additional feature, the valve comprises N 4-way valves and N 2-way valves. The first ports of the N 4-way valves are coupled to N first input terminals. The second ports of the N 4-way valves are coupled to N second input terminals. The third ports of the N 4-way valves are coupled to their respective supply manifolds. The fourth ports of the N 4-way valves are coupled to the first ports of the N 2-way valves. The second ports of the N 2-way valves are coupled to the exhaust system.

[0018] Among the additional features, a system includes a multi-way valve assembly and a controller configured to control the valve.

[0019] In an additional feature, the system further includes N sources of N vaporization precursors; N first mass flow controllers respectively coupled to the N sources of the N vaporization precursors and the N first input terminals; a gas source; and one or more first mass flow controllers coupled to the gas source and the N second input terminals. The controllers are configured to control the flow rates of the N vaporization precursors and one or more gases.

[0020] In an additional feature, the controller is configured to control the flow rate of one or more gases in a different manner when one or more gases are supplied together with N vaporization precursors through their respective supply manifolds, compared to when one or more gases are supplied through their respective supply manifolds but no N vaporization precursors are supplied through their respective supply manifolds.

[0021] Among the additional features, the manifold block contains multiple heaters configured to heat the supply manifold, the output manifold, or both. A controller is configured to control the heaters.

[0022] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0023] This disclosure will be more fully understood from the detailed description and accompanying drawings, in which: Figure 1 shows an example of a substrate processing system incorporating an integrated multi-way valve assembly of the present disclosure; Figure 2A schematically shows an example of an integrated multi-way valve assembly that can be used in the substrate processing system of Figure 1; Figure 2B schematically shows an example of a valve used in the integrated multi-way valve assembly of Figure 2A; Figure 3A schematically shows the integrated multi-way valve assembly of Figure 2A in more detail; Figure 3B schematically shows an example of valve connection used in the integrated multi-way valve assemblies of Figures 2A and 3A; Figure 4 schematically... Figure 1 shows an example of the integrated multi-way valve assembly of Figures 2A and 3A, which further includes multiple heaters; Figure 5 schematically shows a portion of the integrated multi-way valve assembly of Figures 2A-4, illustrating an example of the output manifold and supply manifold of the integrated multi-way valve assembly of Figures 2A-4; Figure 6 schematically shows an example of a detachable sub-assembly of the integrated multi-way valve assembly of Figures 2A-5, which includes an output manifold and a supply manifold; and Figure 7 shows a method of supplying multiple vaporization precursors to the processing chamber of Figure 1 using the integrated multi-way valve assembly of Figures 2A-6.

[0024] In the accompanying drawings, reference numerals may be used repeatedly to identify similar and / or identical elements. Detailed Implementation

[0025] Generally, in a substrate processing system (tool), a valve assembly called an outlet diverter valve (ODV) is used to supply vaporized precursors to a nozzle in the processing chamber and to divert vaporized precursors to the tool's exhaust system when no nozzle supply is available. For example, an ODV includes a 4-way valve and a 2-way diverter valve. The ODV is integrated with a manifold block containing multiple manifolds (conduits). The manifold connects the ports of the 4-way and 2-way valves to the tool's gas source, vaporized precursor source, nozzle, and exhaust system.

[0026] In some applications, it is necessary to supply more than one (e.g., N, where N is an integer greater than 1) vaporization precursors to the nozzles of the treatment chamber. Typically, N ODVs and corresponding manifold assemblies are required to supply the N vaporization precursors respectively. However, the tool's top plate usually does not have sufficient space to accommodate multiple ODVs and corresponding manifold assemblies above the treatment chamber.

[0027] This disclosure provides a single multi-way valve (MPV) assembly that can supply N vaporization precursors to a nozzle in a processing chamber. The MPV assembly includes N ODVs integrated on a single substrate block, which is integrated with a manifold block containing multiple manifolds. The multiple manifolds in the manifold block eliminate the need for the multiple manifolds from corresponding manifold groups that would have been required to supply the N vaporization precursors if the N ODVs were not integrated with the manifold block in the single MPV assembly, as described in detail below.

[0028] In the MPV assembly, each of the N ODVs includes a 4-way valve and a 2-way valve. A manifold in the manifold block connects the N 4-way valves of the N ODVs to N gas sources and N vaporization precursor sources, respectively. Furthermore, a manifold in the manifold block connects the N 4-way valves to the nozzles of the treatment chamber via the mixing outlet of the MPV assembly. The manifold in the manifold block also connects the N 4-way valves and N 2-way valves of the N ODVs to the tool's exhaust system, as described in detail below.

[0029] In the manifold block, a supply manifold (through which the corresponding vaporization precursor flows) from each of the N ODVs' 4-way valves is connected to the output manifold. A single outlet of the output manifold (referred to as the mixing outlet) is connected to the nozzle. Depending on the application, N vaporization precursors can be supplied in any manner (e.g., sequentially, alternately, simultaneously, continuously, in pulses, etc.) through the corresponding N 4-way valves and the corresponding N supply manifolds.

[0030] When switching from supplying a first vaporization precursor to supplying a second vaporization precursor, the first 4-way valve supplying the first vaporization precursor is switched to bypass mode to divert the first vaporization precursor to the exhaust system. The second 4-way valve, configured to supply the second vaporization precursor, begins supplying the second vaporization precursor. Previously supplied vaporization precursor can flow back (i.e., recirculate) from the output manifold to the supply manifold supplying the other vaporization precursor, potentially leading to cross-contamination of the vaporization precursor.

[0031] To prevent backflow and cross-contamination of vaporization precursors, a continuous carrier gas supply is provided via N 4-way valves and N supply manifolds for supplying N types of vaporization precursors to the output manifold. In some applications, a single carrier gas may be compatible with N types of vaporization precursors. When a single carrier gas is compatible with N types of vaporization precursors, it is supplied via N 4-way valves and N supply manifolds for supplying N types of vaporization precursors. In some applications, a single carrier gas may be incompatible with one or more of the N types of vaporization precursors. When a single carrier gas is incompatible with one or more of the N types of vaporization precursors, one or more different carrier gases can be supplied via one or more of the N 4-way valves and N supply manifolds for supplying N types of vaporization precursors. The flow rates of the carrier gas and vaporization precursors can also be controlled using a mass flow controller upstream of the MPV assembly.

[0032] The mixing outlet of the MPV assembly is also designed to prevent cross-contamination between multiple vaporized precursors by providing a flow isolation length between the mixing point and the isolation point (e.g., the intersection of the supply and output manifolds), so that backflow diffusion from the mixing point does not reach the isolation point. The mixing outlet is designed to be adjustable (e.g., the position of the mixing outlet on the output manifold can be changed), allowing the isolation length to be varied to accommodate different flow conditions required for various processes.

[0033] In some applications, it may be necessary to supply one of N vaporization precursors in different volumes. Generally, to supply different volumes, one or more manifolds in the manifold block need to be modified (e.g., replaced). For example, it may be necessary to change the diameter and / or length of the supply manifold. Typically, implementing such a change requires replacing the ODV and the entire assembly of the manifold block, or at least the entire manifold block. Implementing such changes requires significant labor, increases system downtime, and is costly.

[0034] This disclosure provides a portable manifold block in an MPV assembly. Specifically, the supply manifold connecting N 4-way valves of N ODVs to the output manifold, and the output manifold itself, are adjustable, pluggable, and replaceable. The supply and output manifolds are made as pull-out (e.g., removable like a cylinder) and replaceable sub-assemblies. Therefore, if one of the supply manifolds needs modification, the sub-assembly mounted in the manifold block can be replaced with another sub-assembly containing the modified supply and output manifolds. Replacement can be performed quickly, thereby reducing system downtime. These and other features of the MPV assembly of this disclosure are described in detail below.

[0035] Figure 1 shows a block diagram of a substrate processing system 100. System 100 includes an MPV assembly 102 of this disclosure. The MPV assembly 102 supplies various vaporization precursors to a nozzle 104 of a processing chamber 106. The processing chamber 106 includes a substrate support (also referred to as a base) 108. A substrate 110 is disposed on the base 108. For example, the substrate 110 may be held in place by vacuum clamping. Alternatively, the base may include an electrostatic chuck (ESC) to electrostatically clamp the substrate 110 to the base 108. Other clamping mechanisms may also be used instead.

[0036] System 100 includes a gas delivery system 120. For example, gas delivery system 120 includes multiple gas sources, shown as gas source 1 122-1, gas source 2 122-2, and gas source 3 122-3 (collectively referred to as gas source 122). For example, gas source 122 supplies various gases (e.g., process gases, inert gases, carrier gases, purge gases, cleaning gases, etc.). Gas delivery system 120 includes multiple valves 124-1, 124-2, and 124-3 (collectively referred to as valve 124). For example, gas delivery system 120 includes multiple mass flow controllers (MFCs) 126-1, 126-2, and 126-3 (collectively referred to as MFC 126). Gas source 122 is connected to MFC 126 via valve 124. MFC 126 is connected to MPV assembly 102, as described in detail below with reference to Figure 2A and the following figures. Although three gas sources 122 are shown as an example, the gas delivery system 120 can contain any number of gas sources 122.

[0037] System 100 includes a vaporization precursor delivery system 130. For example, the vaporization precursor delivery system 120 includes multiple vaporization precursor (VP) sources, shown as VP source 1 132-1, VP source 2 132-2, and VP source 3 132-3 (collectively referred to as VP source 132). For example, VP source 132 supplies multiple vaporization precursors. For example, each VP source 132 supplies a different vaporization precursor. VP delivery system 130 includes multiple valves 134-1, 134-2, and 134-3 (collectively referred to as valve 134). For example, VP delivery system 130 includes multiple mass flow controllers (MFCs) 136-1, 136-2, and 136-3 (collectively referred to as MFC 136). VP source 132 is connected to MFC 136 via valve 134. MFC 136 controls the flow rate of the vaporization precursor supplied by VP source 132. The MFC136 is connected to the MPV component 102, as described in detail below with reference to Figure 2A and the following figures. Although three VP sources 132 are shown as an example, the VP delivery system 130 may contain any number of VP sources 132.

[0038] MPV assembly 102 is connected to nozzle 104. MPV assembly 102 will be described in detail below with reference to FIG. 2A and thereafter. In short, nozzle 104 receives a mixture of one or more gases and one or more vaporization precursors from MPV assembly 102. Nozzle 104 supplies the mixture of one or more gases and one or more vaporization precursors to treatment chamber 106.

[0039] System 100 includes an RF power supply 140. When using plasma to process substrate 110, RF power supply 140 supplies RF power to nozzle 104 and grounds base 108, or supplies RF power to base 108 and grounds nozzle 104. The RF power ignites a mixture of one or more gases and one or more vaporization precursors to generate plasma 142 in processing chamber 106, thereby processing substrate 110.

[0040] System 100 includes an exhaust system 150. For example, exhaust system 150 includes one or more valves and a vacuum pump (neither shown). Exhaust system 150 maintains pressure (e.g., vacuum) in processing chamber 106 during substrate processing. Exhaust system 150 vents (purges) processing chamber 106 after substrate 110 has been processed. For example, after substrate 110 has been processed with a first mixture and before a second mixture of a second gas and a second precursor is supplied to the processing chamber by nozzle 104, exhaust system 150 purges the first mixture of the first gas and the first precursor to process substrate 110 or a different substrate. When vacuum clamping is used, the vacuum pump of exhaust system 150 also provides vacuum clamping via base 108 to clamp substrate 110 onto base 108.

[0041] System 100 includes system controller 160. System controller 160 controls the components of system 100. For example, controller 160 controls valves (e.g., 4-way valves and 2-way valves) of MPV assembly 102, heaters (described below) supplied to MPV assembly 102, components of gas delivery system 120 and VP delivery system 130, RF power supply 140, and exhaust system 150.

[0042] Although not shown, nozzle 104 and base 108 may include one or more of a temperature sensor, a heater, and a cooling channel. Controller 160 controls the heater and cooling channel in nozzle 104 and base 108 based on the temperatures of nozzle 104 and base 108 sensed by the respective temperature sensors.

[0043] Figure 2A schematically shows an example of an integrated multi-way valve assembly 102. Although MFCs 126 and 136 in Figure 1 are not shown in Figure 2A and subsequent figures, the MPV assembly 102 receives gas and vaporization precursors supplied by gas source 122 and VP sources from MFCs 126 and 136, respectively. Therefore, the connection of the input ports of the MPV assembly 102 to gas source 122 and VP source 132 described below should be understood as a connection to the corresponding MFCs 126 and 136. Furthermore, although the following description uses three vaporization precursors as examples, this disclosure is not limited thereto. The following description of elements relating to the supply of one vaporization precursor to nozzle 104 is extended to the supply of any number of vaporization precursors, typically expressed as N, where N is an integer greater than 1.

[0044] For example, MPV assembly 102 includes first, second, and third ODVs, ODV 1 200-1, ODV 2 200-2, and ODV 3 200-3 (collectively referred to as ODV 200) and manifold block 220 (shown in Figure 3A and thereafter). ODV 200 and manifold block 220 are shown in more detail in Figure 3A. Simply put, as shown in Figure 2A, ODV 200 is connected to gas source 122, VP source 132, nozzle 104, and exhaust system 150 via multiple manifolds in manifold block 220 and via multiple input and output ports, which will be described in more detail below with reference to Figure 3A. ODV 200 is connected to output manifold 230 in manifold block 220 (also see Figure 3A) via corresponding supply manifolds 210-1, 210-2, and 210-3 (collectively referred to as supply manifold 210) in manifold block 220. The output manifold 230 is connected to the nozzle 104 via an outlet (referred to as the mixing outlet) 232 in the manifold block 220 of the MPV assembly 102. The supply manifold 210, the output manifold 230, and the outlet 232 are shown and described in more detail below with reference to Figures 3A and thereafter.

[0045] Figure 2B shows an example of ODV 200. For example, each ODV 200 includes a 4-way valve 202 and a 2-way valve 204. Thus, starting with Figure 3A, ODV 1 200-1 includes a 4-way valve 202-1 and a 2-way valve 204-1; ODV 2 200-2 includes a 4-way valve 202-2 and a 2-way valve 204-2; and ODV 3 200-3 includes a 4-way valve 202-3 and a 2-way valve 204-3. The 4-way valves 202-1, 202-2, and 202-3 are collectively referred to as 4-way valve 202. The 2-way valves 204-1, 204-2, and 204-3 are collectively referred to as 2-way valve 204.

[0046] Figure 3A schematically shows the MPV assembly 102 in more detail. The MPV assembly 102 includes an ODV 200 and a manifold block 220 integrated as a single component. The ODV 200 is integrated on a single substrate. The ODV 200 is integrated together with the manifold block 220. For example, the ODV 200 is mounted to the manifold block 220. Therefore, the MPV assembly 102 is a single integrated component comprising the ODV 200 and the manifold block 200 integrated together.

[0047] MPV assembly 102 (e.g., manifold block 200 of MPV assembly 102) includes multiple inputs and outputs. For example, the multiple inputs include IN1p, IN1g, IN2p, IN2g, IN3p, and IN3g, where p represents a vaporized precursor received by MPV assembly 102 from a corresponding VP source 132, and g represents a carrier gas received by MPV assembly 102 from a corresponding gas source 122. Therefore, input IN1p receives a first vaporized precursor from the first VP source 132-1. Input IN1g receives a first carrier gas from the first gas source 122-1. Input IN2p receives a second vaporized precursor from the second VP source 132-2. Input IN2g receives a second carrier gas from the second gas source 122-2. Input IN3p receives a third precursor from the third VP source 132-3. Input IN3g receives a third carrier gas from the third gas source 122-3. Input terminals IN1p, IN2p, and IN3p can be collectively referred to as the first N inputs, which receive N types of vaporization precursors from N VP sources 132 respectively. Input terminals IN1g, IN2g, and IN3g can be collectively referred to as the second N inputs, which receive N types of carrier gases from N gas sources 122 respectively.

[0048] Figure 3B shows a connection example of the 4-way valve 202 and the 2-way valve 204 of the ODV 200. The 4-way valve 202 has four ports P1, P2, P3, and P4. For example, ports P1 and P2 of the 4-way valve 202 are input ports, and ports P3 and P4 of the 4-way valve 202 are output ports. For example, input terminals INp and INg are connected to the two input ports P1 and P2 of the 4-way valve through corresponding different manifolds 212 and 214 in manifold block 220, respectively. For example, the first output port P3 of the 4-way valve 202 is connected to the output manifold 230 through the corresponding supply manifold 210. The second output port P4 of the 4-way valve 202 is connected to the input port P1 of the 2-way valve 204 through manifold 216 in manifold block 220, as shown below.

[0049] The 2-way valve 204 has two ports, P1 and P2. For example, the first port P1 of the 2-way valve 204 is the input port, and the second port P2 of the 2-way valve 204 is the output port. The input port P1 of the 2-way valve 204 is connected to the second output port P4 of the 4-way valve 202 via a corresponding manifold 216 in the manifold block 220. The output port P2 of the 2-way valve 204 is connected to the exhaust system 150.

[0050] As shown in Figure 3A, multiple input terminals IN1p, IN1g, IN2p, IN2g, IN3p, and IN3g are connected to the 4-way valve 202 via corresponding different manifolds in manifold block 220. Specifically, input terminals IN1p and IN1g are connected to the two input ports P1 and P2 of the first 4-way valve 202-1 via corresponding different manifolds 212-1 and 214-1 in manifold block 220. Input terminals IN2p and IN2g are connected to the two input ports P1 and P2 of the second 4-way valve 202-2 via corresponding different manifolds 212-2 and 214-2 in manifold block 220. Input terminals IN3p and IN3g are connected to the two input ports P1 and P2 of the third 4-way valve 202-3 via corresponding different manifolds 212-3 and 214-3 in manifold block 220.

[0051] The output port P3 of the 4-way valve 202 is connected to the output manifold 230 via a corresponding supply manifold 210. For example, the output port P3 of the first 4-way valve 202-1 is connected to the output manifold 230 via supply manifold 210-1. The output port P3 of the second 4-way valve 202-2 is connected to the output manifold 230 via supply manifold 210-2. The output port P3 of the third 4-way valve 202-3 is connected to the output manifold 230 via supply manifold 210-3. The output manifold 230 includes an outlet (referred to as a mixing outlet) 232. The outlet 232 is connected to the nozzle 104.

[0052] The output port P4 of the 4-way valve 202 is connected to the input port P1 of the 2-way valve 204 via corresponding manifolds 216 in the manifold block 220. For example, the output port P4 of the 4-way valve 202-1 is connected to the input port P1 of the 2-way valve 204-1 via manifold 216-1. The output port P4 of the 4-way valve 202-2 is connected to the input port P1 of the 2-way valve 204-2 via manifold 216-2. The output port P4 of the 4-way valve 202-3 is connected to the input port P1 of the 2-way valve 204-3 via manifold 216-3.

[0053] Supply manifolds 210-1, 210-2, and 210-3 are collectively referred to as supply manifold 210, and are individually referred to as supply manifold 210. Manifolds 212-1, 212-2, and 212-3 are collectively referred to as manifold 212, and are individually referred to as manifold 212. Manifolds 214-1, 214-2, and 214-3 are collectively referred to as manifold 214, and are individually referred to as manifold 214. Manifolds 216-1, 216-2, and 216-3 are collectively referred to as manifold 216, and are individually referred to as manifold 216.

[0054] The first vaporization precursor flows from the input terminal IN1p through the first 4-way valve 202-1, through the supply manifold 210-1, through the output manifold 230, and through the outlet 232 to the nozzle 104. The second vaporization precursor flows from the input terminal IN2p through the second 4-way valve 202-2, through the supply manifold 210-2, through the output manifold 230, and through the outlet 232 to the nozzle 104. The third vaporization precursor flows from the input terminal IN3p through the third 4-way valve 202-3, through the supply manifold 210-3, through the output manifold 230, and through the outlet 232 to the nozzle 104.

[0055] To prevent backflow and cross-contamination of the vaporization precursor, a carrier gas is supplied via supply manifold 210. The carrier gas is supplied via supply manifold 210 regardless of whether the vaporization precursor is being supplied via supply manifold 210. For example, a first carrier gas flows from input IN1g through a first 4-way valve 202-1, through supply manifold 210-1, through output manifold 230, and through outlet 232 to nozzle 104. A second carrier gas flows from input IN2p through a second 4-way valve 202-2, through supply manifold 210-2, through output manifold 230, and through outlet 232 to nozzle 104. A third carrier gas flows from input IN3p through a third 4-way valve 202-3, through supply manifold 210-3, through output manifold 230, and through outlet 232 to nozzle 104. As described above, one or more of the carrier gases can be the same or different, depending on whether the carrier gas is chemically compatible or incompatible with the vaporization precursor.

[0056] When the supply of vaporization precursor is stopped (e.g., when switching from supplying one vaporization precursor to supplying another to nozzle 104), the supplied vaporization precursor is diverted to exhaust system 150 via a corresponding 4-way valve and a corresponding 2-way valve. Then, the corresponding carrier gas is supplied to output manifold 230 via the corresponding 4-way valve and the corresponding supply manifold 210. Subsequently, when the supply of vaporization precursor is to be resumed, the corresponding 4-way valve stops diverting the vaporization precursor to exhaust system 150 and supplies the vaporization precursor along with the carrier gas to output manifold 230 via the corresponding supply manifold 210.

[0057] The flow rate of one or more carrier gases passing through the supply manifold 210 can be controlled (e.g., via controller 160) depending on whether the corresponding vaporization precursor is being supplied through the supply manifold 210 or diverted to the exhaust system 150. For example, when the vaporization precursor is supplied through the supply manifold 210, the carrier gas can be supplied through the supply manifold 210 at a first flow rate, while when the vaporization precursor is not supplied through the supply manifold 210 but diverted to the exhaust system 150, the carrier gas can be supplied at a second flow rate, wherein the first flow rate and the second flow rate can be different. Regardless of whether the corresponding vaporization precursor is supplied through the supply manifold 210, continuous supply of carrier gas through the supply manifold 210 prevents backflow and cross-contamination of the vaporization precursor in the manifold of the manifold block 220.

[0058] Additionally, backflow and cross-contamination of the vaporization precursor can be prevented by configuring the following parameters of the output manifold 230 and the supply manifold 210. For example, the length, dimensions, and shape of the output manifold 230 and the supply manifold 210; the location where the supply manifold 210 connects to the output manifold 230; the location of the outlet 232 on the output manifold 230; and the distance between the location where the outlet 232 connects to the output manifold 230 and the location where the supply manifold 210 connects to the output manifold 230 can be configured to prevent backflow and cross-contamination of the vaporization precursor.

[0059] Figure 4 shows the MPV assembly 102 comprising multiple heaters 240-1, 240-2, 240-3, and 240-4 (collectively referred to as heaters 240). The heaters 240 are arranged in a manifold block 220. For simplicity, only the output manifold 230 and supply manifold 210 of the manifold block 220 are shown. Other components shown in Figures 3A and 3B are omitted but are assumed to be present. The heaters 240 are omitted in other figures but are assumed to be present.

[0060] Heater 240 heats the corresponding supply manifold 210 and output manifold 230. Heater 240 ensures that the vaporization precursor in supply manifold 210 and output manifold 230 remains in vapor form and is delivered to nozzle 104 in vapor form through outlet 232. Heater 240 also ensures that the vaporization precursor does not condense in supply manifold 210 and output manifold 230.

[0061] Although the example shows four heaters 240, the manifold block 220 can contain any number of heaters to heat the vaporization precursor. The controller 160 (see Figure 1) controls the power supply to the heaters 240 to control the temperature of the vaporization precursor supplied to the manifold 210 according to the properties of the precursor, such as boiling point, etc.

[0062] Figure 5 shows an MPV assembly 102 with only the output manifold 230 and supply manifold 210 shown in manifold block 220, to describe the output manifold 230 and supply manifold 210 in more detail. Other components of the MPV assembly 102 shown in Figures 3A-4 are omitted but are assumed to be present. For example, the output manifold 230 and supply manifold 210 may have the same size and shape. For example, the output manifold 230 and supply manifold 210 may have different sizes and shapes. For example, the output manifold 230 and supply manifold 210 may have the same diameter. For example, the output manifold 230 may have a different diameter than the supply manifold 210. For example, at least one of the supply manifolds 210 may have a different diameter than the other supply manifolds 210. For example, the length of the output manifold 230 may be less than the length of the supply manifold 210. For example, the lengths of the supply manifolds 210 may be the same. For example, at least one of the supply manifolds 210 may have a different length than the other supply manifolds 210. The output manifold 230 and the supply manifold 210 may have any combination of sizes and shapes.

[0063] Although the output manifold 230 and supply manifold 210 are schematically shown as straight elements, they can be curved, bent, serpentine, or zigzag. As described above, the output manifold 230 and supply manifold 210 can be shaped and the supply manifold 210 can be connected to the output manifold 230 as described above to prevent backflow and cross-contamination of the vaporization precursor. The output manifold 230 and supply manifold 210 can be shaped and the supply manifold 210 can be connected to the output manifold 230 to shorten the distance between the 4-way valve 202 and the outlet 232 of the MPV assembly 102 (e.g., the flow path of the vaporization precursor). The output manifold 230 and supply manifold 210 can be shaped to be assembled in the manifold block 220 along with other manifolds and heater 240.

[0064] Figure 6 shows a removable assembly 250 comprising an output manifold 230 and a supply manifold 210. In the removable assembly 250, either the output manifold 230 or the supply manifold 210 can be customized (e.g., shape and size) for a specific application. For example, the diameter and / or length of any output manifold 230 and supply manifold 210 can be designed to suit a specific application. For example, to supply a larger volume of vaporization precursor, the diameter of one of the supply manifolds 210 can be increased. This change can be achieved by exchanging an existing removable assembly 250 in the MPV assembly 102 with another removable assembly 250 having a different supply manifold 210.

[0065] In some applications, the location where the supply manifold 210 connects to the output manifold 230, the location of the outlet 232 on the output manifold 230, and the distance between the location where the outlet 232 connects to the output manifold 230 and the location where the supply manifold 210 connects to the output manifold 230 can be configured to prevent backflow and cross-contamination of the vaporized precursor. This change can be implemented in the removable assembly 250, and the existing removable assembly 250 in the MPV assembly 102 can be interchanged with another removable assembly 250 with a different design.

[0066] For example, before switching from a first application to a second application in system 100 (see Figure 1), a first removable component 250 used with the first application can be removed from the MPV component 102, and a second removable component 250 designed for the second application can be inserted into (padded to) the MPV component 102. When switching from one application to another, the removable component 250 eliminates the need to replace the entire MPV component 102 or modify it. Therefore, the removable component 250 makes the supply manifold 210 and the output manifold 230 adjustable, modular, and portable. Although not shown, in some examples, the removable component 250 may also include one or more heaters 240.

[0067] Figure 7 illustrates a method 300 for delivering multiple vaporization precursors to a nozzle 104 using an MPV assembly 102. For example, a controller 160 performs the following steps of method 300 as described above with reference to Figures 2A-6. At 302, the controller 160 controls the ODV 200 to deliver the vaporization precursors to the nozzle 104 via the MPV assembly 102. At 304, the controller 160 controls the ODV 200 to supply one or more carrier gases and vaporization precursors to the nozzle 104 via the MPV assembly 102.

[0068] At 306, when switching between vaporization precursors and when one or more vaporization precursors are not supplied via MPV assembly 102, controller 160 controls ODV 200 to continue supplying one or more carrier gases via MPV assembly 102 to prevent vaporization precursor backflow and cross-contamination in the manifold of MPV assembly 102.

[0069] At 308, controller 160 controls the power supply to heater 240 to prevent condensation of vaporization precursors in the manifold of MPV assembly 102 and to supply vaporization precursors to nozzle 104 in vaporized form. At 310, controller 160 controls ODV to divert one or more vaporization precursors to exhaust system 150 (e.g., when switching between vaporization precursors) and to supply vaporization precursors to nozzles in any manner (e.g., sequentially, alternately, simultaneously, continuously, in a pulsed manner, etc.).

[0070] MPV assembly 102 is not a design choice or rearrangement of components such as valves and manifolds. Instead, MPV assembly 102 is integrated as a single integrated component of ODV 200 and manifold block 220 to provide numerous advantages. These advantages include the following: MPV assembly 102 incorporates multiple ODVs 200 and utilizes the grouped manifolds in manifold block 220, thus eliminating the need for multiple manifolds that would have been required if each ODV 200 had its own separate manifold group. Therefore, MPV assembly 102 is compact and can be assembled in the limited space of the top plate above nozzle 104. MPV assembly 102 includes supply manifold 210, output manifold 230, and outlet 232, which are specifically designed to prevent backflow and cross-contamination of vaporized precursors in the manifolds of MPV assembly 102. MPV assembly 102 also optimizes the flow path of the vaporization precursor between ODV 200 and outlet 232 of MPV assembly 102, enabling rapid and efficient delivery of the vaporization precursor to nozzle 104 without cross-contamination. The optimized flow path and heater 240 integrated in manifold block 220 prevent condensation of the vaporization precursor in the manifold of manifold block 220 and ensure that the vaporization precursor is delivered to nozzle 104 in vaporized form. The optimized flow path also allows for rapid switching between vaporization precursors, increasing the processing speed of substrate 110 using different vaporization precursors, thereby improving throughput. The optimized flow path and rapid switching of vaporization precursors also reduce waste of expensive vaporization precursors, some of which can be harmful.

[0071] The foregoing description is merely illustrative in nature and is in no way intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims.

[0072] It should be understood that one or more steps in the method may be performed in a different order (or simultaneously) without altering the principles of this disclosure. Furthermore, while each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of this disclosure may be implemented in and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other remains within the scope of this disclosure.

[0073] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “set.” Unless the relationship between the first and second elements is explicitly described as “direct,” the relationship described in the above disclosure can be a direct relationship, where no other intermediate element exists between the first and second elements, but it can also be an indirect relationship, where one or more intermediate elements exist between the first and second elements (spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the use of a non-exclusive logical OR (A or B or C) logic and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0074] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of semiconductor wafers or substrates before, during, and after processing.

[0075] An electronic device may be referred to as a “controller”, which controls various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer tools and other transfer tools, and / or loading locks that are connected to or docked with a specific system.

[0076] In a broad sense, a controller can be defined as an electronic device that has various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software).

[0077] Program instructions can be sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing specific processes on or for a semiconductor wafer or system. In some implementations, the operating parameters may be part of a recipe defined by a processing engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0078] In some implementations, the controller may be part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system. For example, the controller may be in the cloud or be a whole or part of a fab host system, allowing remote access to wafer processing. The computer can then remotely access the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, check trends or performance standards of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process.

[0079] In some examples, a remote computer (e.g., a server) may provide the processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool to which the controller is configured to interface with or control the tool.

[0080] Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose, such as the processing and control described herein. An example of a distributed controller for such a purpose is one or more integrated circuits located in a room that communicate with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control processing in the room.

[0081] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0082] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

Claims

1. A multi-way valve assembly for a substrate processing system, the multi-way valve assembly comprising: a manifold block having: N first input terminals configured to receive N vaporization precursors, wherein N is an integer greater than 1; and an outlet for connecting to a nozzle in a processing chamber; and multiple manifolds enclosed within the manifold block; and a plurality of valves mounted on the manifold block, the valves being coupled to the N first input terminals via the manifolds in the manifold block, the valves being configured to supply the N vaporization precursors via respective supply manifolds in the manifold block, the respective supply manifolds being connected to an output manifold in the manifold block, the output manifolds including the outlets to supply one or more of the N vaporization precursors to the nozzle.

2. The multi-way valve assembly of claim 1, wherein the manifold block and the plurality of valves are integrated in a single integrated assembly.

3. The multi-way valve assembly according to claim 1, wherein, The connection between the supply manifold and the output manifold, and the outlet of the output manifold, are configured to prevent cross-contamination of the N vaporization precursors.

4. The multi-way valve assembly according to claim 1, wherein: The manifold block includes N second input terminals configured to receive one or more gases; the valve is coupled to the N second input terminals via the manifold in the manifold block; and the valve is configured to supply the one or more gases via the supply manifold.

5. The multi-way valve assembly of claim 4, wherein the valve is configured to supply the one or more gases and the N vaporization precursors to the output manifold via the supply manifold.

6. The multi-way valve assembly of claim 4, wherein the valve is configured to supply the one or more gases to the output manifold via the supply manifold, regardless of whether the N vaporization precursors are supplied to the output manifold via the supply manifold, to prevent cross-contamination of the N vaporization precursors.

7. The multi-way valve assembly of claim 4, wherein the one or more gases are the same.

8. The multi-way valve assembly according to claim 4, wherein: The manifold block includes N output terminals connected to the exhaust system; the valve is coupled to the N output terminals via the manifold in the manifold block; and the valve is configured to redirect the N vaporization precursors to the exhaust system via the N output terminals.

9. The multi-way valve assembly of claim 8, wherein the valve is configured to supply one or more gases to the output manifold via the supply manifold, regardless of whether the N vaporization precursors are diverted to the exhaust system, to prevent cross-contamination of the N vaporization precursors.

10. The multi-way valve assembly of claim 1, wherein the supply manifold, the output manifold, and the outlet are configured as detachable subassemblies.

11. The multi-way valve assembly of claim 1, wherein the manifold block includes a plurality of heaters configured to heat the respective supply manifolds.

12. The multi-way valve assembly of claim 1, wherein the manifold block includes a heater configured to heat the output manifold.

13. The multi-way valve assembly of claim 8, wherein the valve comprises: N 4-way valves; and N 2-way valves; wherein the first ports of the N 4-way valves are respectively coupled to the N first input terminals; wherein the second ports of the N 4-way valves are respectively coupled to the N second input terminals; wherein the third ports of the N 4-way valves are coupled to the respective supply manifolds; wherein the fourth ports of the N 4-way valves are respectively coupled to the first ports of the N 2-way valves; and wherein the second ports of the N 2-way valves are coupled to the exhaust system.

14. A system comprising: a multi-way valve assembly as claimed in claim 8; and a controller configured to control the valve.

15. The system of claim 14, further comprising: N sources configured to supply the N vaporization precursors; N first mass flow controllers respectively coupled to the N sources and the N first input terminals; one or more gas sources configured to supply the one or more gases; and one or more first mass flow controllers coupled to the one or more gas sources and the N second input terminals, wherein the controllers are configured to control the flow rates of the N vaporization precursors and the one or more gases.

16. The system of claim 15, wherein the controller is configured to control the flow rate of the one or more gases in a different manner than when the one or more gases are supplied through the respective supply manifolds together with the N vaporization precursors, and when the one or more gases are supplied through the respective supply manifolds but the N vaporization precursors are not supplied through the respective supply manifolds.

17. The system according to claim 14, wherein: The manifold block includes a plurality of heaters configured to heat the supply manifold, the output manifold, or both; and the controller is configured to control the heaters.

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