Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus according to the present disclosure includes: a container; an opening part which is provided in the container and through which a substrate passes; the gate is used for opening and closing the opening part; a substrate holding unit that holds the substrate inside the container; an exhaust duct for discharging gas from the inside of the container to the outside; the exhaust air door is used for adjusting the air displacement of the exhaust pipeline; the opening degree sensor is used for detecting the opening degree of the exhaust air door; and a control circuit that controls the degree of opening of the exhaust damper during an opening period in which the shutter opens the opening and a closing period in which the shutter closes the opening, respectively. During the opening period, the control circuit performs offset control for fixing the opening degree of the exhaust damper to a value offset by a set amount from a detection value of the opening degree sensor during the closing period prior to the opening period.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology The substrate processing apparatus described in Patent Document 1 includes a damper. The damper is a mechanism for adjusting the exhaust volume. The control device adjusts the exhaust volume by controlling the opening degree of the damper. Under normal circumstances, the control device performs feedback control on the opening degree of the damper, so that the internal pressure of the chamber is maintained within a specified range. When a given event occurs, the control device switches the damper opening control from feedback control to non-feedback control.

[0003] <Prior art documents> <Patent Documents> Patent Document 1: Japanese Patent Application Publication No. 2016-21528 Summary of the Invention <Problem to be solved by this invention> One aspect of this disclosure provides a technique for suppressing pressure fluctuations inside a container.

[0004] <Methods for solving problems> One aspect of this disclosure relates to a substrate processing apparatus comprising: a container; an opening disposed in the container for a substrate to pass through; a gate for opening and closing the opening; a substrate holding portion for holding the substrate inside the container; an exhaust pipe for discharging gas from inside the container to the outside; an exhaust damper for adjusting the exhaust volume of the exhaust pipe; an opening degree sensor for detecting the opening degree of the exhaust damper; and a control circuit for controlling the opening degree of the exhaust damper during the opening period when the gate opens the opening and during the closing period when the gate closes the opening. The control circuit performs offset control during the opening period by fixing the opening degree of the exhaust damper to a value offset by a set amount from the detection value of the opening degree sensor during the preceding closing period of the opening period.

[0005] <The Effects of the Invention> According to one aspect of this disclosure, it is possible to suppress pressure fluctuations inside the container. Attached Figure Description

[0006] Figure 1 This is a cross-sectional view showing a substrate processing apparatus according to one embodiment.

[0007] Figure 2 This is a flowchart illustrating a substrate processing method according to one embodiment.

[0008] Figure 3This is a flowchart illustrating an example of a method for controlling the opening of an exhaust damper.

[0009] Figure 4 This is a graph showing an example of how the internal pressure of the container and the opening of the exhaust damper change over time. Detailed Implementation

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Furthermore, in the various drawings, the same or corresponding structures are labeled with the same symbols, and sometimes the description is omitted.

[0011] Reference Figure 1 The following describes a substrate processing apparatus 1 according to one embodiment. The substrate processing apparatus 1 includes, for example, a container 10, an opening 11, a gate 12, a substrate holding part 20, a liquid supply part 30, a heating part 40, a cup body 50, and a control circuit 90.

[0012] Container 10 houses substrate W. An opening 11 is provided on the side wall of container 10 for substrate W to pass through. Gate 12, under the control of control circuit 90, opens and closes opening 11. An FFU (Fan Filter Unit) 13 is provided on the top of container 10. The FFU 13 creates a downward flow inside container 10.

[0013] The substrate W is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a glass substrate. The substrate W is transferred from the outside of the container 10 into the inside by the transport device 2 through the opening 11. After being treated with the processing liquid, the substrate W is transferred from the inside of the container 10 to the outside by the transport device 2 through the opening 11.

[0014] The substrate holding section 20 holds the substrate W inside the container 10. The substrate holding section 20 holds the substrate W horizontally, for example. The substrate holding section 20 is, for example, a vacuum chuck or a mechanical chuck. The rotation drive section 25 rotates the substrate holding section 20 about a vertical rotation axis 21. The rotation drive section 25 includes a reduction gear and a motor, etc.

[0015] The liquid supply unit 30 supplies processing liquid to the substrate W held by the substrate holding unit 20. The liquid supply unit 30 has a nozzle 31. The nozzle 31 is disposed above the substrate W held in the substrate holding unit 20 and sprays the processing liquid toward the upper surface of the substrate W. The number of nozzles 31 is not particularly limited, and nozzles 31 can be arranged according to each type of processing liquid. Multiple types of processing liquids can also be sprayed sequentially from one nozzle 31. The nozzle 31 can be a two-fluid nozzle, or the processing liquid can be sprayed out in a mist by the pressure of gas.

[0016] The processing solution comprises a chemical solution and a rinsing solution for removing the chemical solution from the substrate W. The chemical solution may be, for example, SC1 (a mixture of ammonia and hydrogen peroxide), SPM (a mixture of sulfuric acid and hydrogen peroxide), or DHF (dilute hydrofluoric acid). The rinsing solution may be, for example, pure water such as DIW (deionized water). The processing solution may also contain an organic solvent such as IPA (isopropanol) that is replaced by the rinsing solution.

[0017] The liquid supply unit 30 includes a supply line 32 for supplying treatment liquid to the nozzle 31, and various devices disposed along the supply line 32. These devices include, for example, an on / off valve 33, a flow meter 34, and a flow regulator 35. The on / off valve 33 is used to open and close the flow path of the treatment liquid. The flow meter 34 is used to measure the flow rate of the treatment liquid. The flow regulator 35 is used to regulate the flow rate of the treatment liquid. Each device is configured for each type of treatment liquid.

[0018] The liquid supply unit 30 includes a nozzle moving part 36 for moving the nozzle 31. The nozzle moving part 36 includes, for example, a rotating arm, a rotating mechanism, and a lifting mechanism. The nozzle 31 is disposed at one end of the rotating arm, and a rotating shaft is disposed at the other end. The rotating arm is horizontally positioned, and the rotating shaft is vertically positioned. The rotating mechanism moves the nozzle 31 horizontally by rotating the rotating arm around the rotating shaft. The lifting mechanism raises and lowers the nozzle 31 by raising and lowering the rotating arm. Both the rotating mechanism and the lifting mechanism include actuators such as electric motors or cylinders. Furthermore, the structure of the nozzle moving part 36 is not particularly limited.

[0019] The heating unit 40 is used to heat the lower surface of the substrate W held by the substrate holding unit 20. The heating unit 40 heats the lower surface periphery of the substrate W by supplying preheated gas to it. The heating unit 40 includes, for example, a heater 41, an on / off valve 42, and a flow regulator 43. The heater 41 is used to heat the gas. The on / off valve 42 is used to open and close the gas flow path. The flow regulator 43 is used to regulate the gas flow rate.

[0020] The cup body 50 surrounds the substrate W held by the substrate holding portion 20. The cup body 50 receives the processing liquid splashed from the periphery of the substrate W. In this embodiment, the cup body 50 does not rotate with the substrate holding portion 20, but it may rotate with the substrate holding portion 20. At the bottom of the cup body 50, a drain pipe 51 and an exhaust pipe 52 are provided. The drain pipe 51 is used to drain the liquid accumulated inside the cup body 50. The exhaust pipe 52 is used to exhaust the gas accumulated inside the cup body 50.

[0021] The control circuit 90 is, for example, a computer, including an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs for controlling various processes executed in the board processing apparatus 1. The control circuit 90 controls the operation of the board processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0022] The control circuit 90 includes electronic circuits such as a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and executes various control actions described in this specification by executing instruction codes stored in memory or by designing circuits for specific purposes.

[0023] Next, refer to Figure 2 A substrate processing method according to one embodiment will be described. First, the gate 12 opens the opening 11 (step S101). Next, the transport device 2 moves the substrate W from the outside of the container 10 into the inside (step S102). At this time, the substrate holding part 20 holds the substrate W horizontally. Afterward, when the transport device 2 withdraws from the inside of the container 10 to the outside, the gate 12 closes the opening 11 (step S103).

[0024] Next, the rotation drive unit 25 rotates the substrate W together with the substrate holding unit 20 (step S104). Then, the liquid supply unit 30 supplies processing liquid to the substrate W (step S105). At this time, the heating unit 40 can supply preheated gas to the substrate W. Afterwards, the liquid supply unit 30 stops supplying processing liquid, and the rotation drive unit 25 rotates the substrate W together with the substrate holding unit 20 to dry the substrate W (step S106). Then, the rotation drive unit 25 stops rotating the substrate W.

[0025] Next, the gate 12 reopens the opening 11 (step S107). Then, the transport device 2 (not shown) enters the container 10 from the outside and receives the substrate W from the substrate holding part 20. The substrate holding part 20 releases its grip on the substrate W beforehand. Subsequently, the transport device 2 moves the substrate W from the inside of the container 10 to the outside (step S108). Afterwards, the gate 12 closes the opening 11 again (step S109).

[0026] Next, refer to again Figure 1The exhaust system of the substrate processing apparatus 1 will be described. The substrate processing apparatus 1 includes an exhaust pipe 70 and a switching unit 71. The exhaust pipe 70 discharges gas from the inside of the container 10 to the outside. The switching unit 71 switches the destination of the gas flowing through the exhaust pipe 70 according to the type of gas flowing through the exhaust pipe 70. For example, the switching unit 71 switches the destination of the gas flowing through the exhaust pipe 70 according to the type of processing liquid supplied to the substrate W by the liquid supply unit 30.

[0027] The switching unit 71 delivers gas to multiple exhaust sources 73 via multiple individual pipes 72. One exhaust source 73 draws in alkaline or neutral gases, while another exhaust source 73 draws in acidic gases. Alternatively, one exhaust source 73 can draw in alkaline gases, while another exhaust source 73 draws in acidic or neutral gases. By switching the gas delivery destination according to the type of gas, the gas can be easily rendered harmless. The exhaust source 73 may include, for example, a suction pump. Instead of a suction pump, an ejector may be used.

[0028] The switching unit 71 includes, for example, a switching valve 71a. The switching valve 71a is provided for each individual pipe 72 and switches between a state where the individual pipe 72 is connected to the exhaust pipe 70 and a state where the individual pipe 72 is disconnected from the exhaust pipe 70. When the individual pipe 72 is disconnected from the exhaust pipe 70, the switching valve 71a can introduce outside air into the individual pipe 72. By introducing outside air into the individual pipes 72 that are disconnected from the exhaust pipe 70, the suction volume of all exhaust sources 73 can be stabilized regardless of the destination of the gas flowing through the exhaust pipe 70.

[0029] Exhaust ducts 70 and switching units 71 are respectively provided in each of the plurality of substrate processing devices 1. In contrast, individual piping 72 and exhaust sources 73 are shared by the plurality of substrate processing devices 1. By introducing external air into the individual piping 72, which is blocked from exhaust ducts 70, through switching valve 71a, the load of all exhaust sources 73 can be stabilized regardless of the destination of the gas flowing through exhaust ducts 70, and the pressure inside all containers 10 can be stabilized.

[0030] In addition to the exhaust duct 70, the substrate processing apparatus 1 also includes an exhaust damper 81 and an opening sensor 82. The exhaust damper 81 adjusts the exhaust volume of the exhaust duct 70. The opening sensor 82 detects the opening degree of the exhaust damper 81. The opening sensor 82 sends the detected opening value to the control circuit 90. The control circuit 90 controls the opening degree of the exhaust damper 81 during the opening period of the gate 12 and during the closing period of the gate 12. The larger the opening degree of the exhaust damper 81, the larger the exhaust volume of the exhaust duct 70.

[0031] Next, refer to Figure 3 An example of controlling the opening of the exhaust damper 81 will be described. The control circuit 90 checks whether the current period is closed (step S201). If the current period is closed (step S201: "Yes"), the control circuit 90 performs feedback control on the opening of the exhaust damper 81, causing the detection value of the pressure sensor 83 to become the set value (step S202). The pressure sensor 83 detects the pressure inside the container 10. The pressure sensor 83 sends the detected pressure value to the control circuit 90. During the closed period, the opening of the exhaust damper 81 may change in order to maintain the pressure inside the container 10 at the set value.

[0032] When the current period is open rather than closed (step S201: "No"), the pressure inside container 10 tends to be equal to the pressure outside container 10 (e.g., the transport chamber of transport substrate W in transport device 2). The pressure outside container 10 is set, for example, to be lower than the pressure inside container 10. This allows gas to flow from the inside of container 10 to the outside via opening 11, suppressing the intrusion of particles from the outside of container 10 into the inside. Therefore, the inside of container 10 can be kept clean. Alternatively, the pressure outside container 10 can also be set to be higher than the pressure inside container 10.

[0033] If the container is currently in an open state (step S201: "No"), and there is a pressure difference between the outside and inside of the container 10, the pressure inside the container 10 will tend to equalize with the pressure outside the container 10. In this case, the control circuit 90 controls the opening of the exhaust damper 81 to be fixed (step S203). The control circuit 90, for example, fixes the opening of the exhaust damper 81 to the detection value detected by the opening sensor 82 during the closing period immediately preceding the opening period (preferably at the end of the closing period).

[0034] Additionally, although details will be described later, the control circuit 90 can also perform the following control during the closing period: fix the opening of the exhaust damper 81 to a value that deviates from the detection value detected by the opening sensor 82 during the closing period immediately preceding the opening period (preferably at the end of the closing period). This control is referred to below as offset control. In summary, when the current period is open (step S201: "No"), the control circuit 90 will control the opening of the exhaust damper 81 to be fixed.

[0035] Next, mainly refer to Figure 4 An example illustrating the time-varying pressure inside container 10 and the opening of exhaust damper 81 is given. Figure 4 In the diagram, the period represented by the dotted pattern is the opening period. Furthermore, in... Figure 4In the diagram, dashed lines L1 and L3 represent data without offset control, while solid lines L2 and L4 represent data with offset control. Offset control is performed, for example, in the second and subsequent batches. Offset control may not be performed in the first batch. However, Figure 4 The offset control indicated by the middle arrow A2 can also be performed in the first batch, as described later. A batch consists, for example, of n substrates W housed in a single card box. n can be any natural number greater than 2 and is not particularly limited, for example, 25.

[0036] Before the first (first) substrate W of each batch is transported to the opening 11 of the container 10, the gate 12 closes the opening 11. At this time, there is no substrate W inside the container 10, and the substrate holding part 20 does not hold the substrate W. Then, when the gate 12 opens the opening 11, the conveying device 2 moves the substrate W from the outside of the container 10 into the inside. Next, when the substrate holding part 20 holds the substrate W horizontally and the conveying device 2 withdraws from the inside of the container 10 to the outside, the gate 12 closes the opening 11.

[0037] Next, the liquid supply unit 30 supplies processing liquid to the substrate W. At this time, the heating unit 40 may also supply preheated gas to the substrate W. After the substrate W is dried, the gate 12 opens the opening 11. Then, the transport device 2 removes the substrate W and subsequently loads in another substrate W. Next, when the substrate holding unit 20 holds the substrate W horizontally and the transport device 2 withdraws from the inside of the container 10 to the outside, the gate 12 closes the opening 11. This process is then repeated.

[0038] After the last (nth) substrate W of each batch is removed from the inside of container 10 to the outside, gate 12 closes opening 11. At this time, there is no substrate W inside container 10, and substrate holding part 20 does not hold substrate W. This state continues until the first (first) substrate W of the next batch is transported to opening 11 of container 10.

[0039] Additionally, during the closing period, the control circuit 90 provides feedback control over the opening of the exhaust damper 81, ensuring that the value detected by the pressure sensor 83 becomes the set value. For example... Figure 4 As shown, the opening degree of the exhaust damper 81 during the shutdown period changes depending on whether the substrate holding part 20 holds the substrate. This is because the exhaust resistance of the gas changes depending on whether the substrate holding part 20 holds the substrate.

[0040] like Figure 1 As shown, when the substrate holding portion 20 holds the substrate W, the gas exhaust resistance is greater compared to when the substrate holding portion 20 does not hold the substrate W. This is because the substrate W obstructs gas exhaust. Figure 1As shown, when the substrate processing apparatus 1 includes a cup body 50 and the exhaust pipe 70 discharges gas from the inside of the cup body 50 to the outside of the container 10, the change in exhaust resistance is particularly significant.

[0041] exist Figure 4 In this context, the first detection value D1 is the detection value of the opening sensor 82 when the substrate holding section 20 does not hold the substrate W during the closing period. Furthermore, in... Figure 4 In the diagram, the second detection value D2 is the detection value of the opening sensor 82 when the substrate holding part 20 holds the substrate W during the closing period. Figure 4 In this context, D1 and D2 are obtained, for example, at the end of the shutdown period. D2 is greater than D1 because when the substrate holding section 20 holds the substrate W, the gas exhaust resistance is greater compared to when the substrate holding section 20 does not hold the substrate W.

[0042] Furthermore, in this embodiment, when the substrate holding section 20 holds the substrate W during the shutdown period, the flow rate of gas supplied from the outside of the container 10 to the inside (hereinafter referred to as the gas supply rate) will change during the shutdown period. This is because, except at the end of the shutdown period, the heating section 40 supplies preheated gas to the periphery of the lower surface of the substrate W. At the end of the shutdown period, the heating section 40 stops supplying gas. Therefore, at the end of the shutdown period, in order to maintain the pressure inside the container 10 at a set value, the opening of the exhaust damper 81 will gradually decrease.

[0043] Similar to the end of the shutdown period, the heating unit 40 stops supplying gas during the opening period. To detect D1 and D2 under the same conditions (gas supply rate), D2 can be obtained at the end of the shutdown period. Furthermore, in the absence of the heating unit 40, i.e., when the gas supply rate remains constant during the shutdown period, D2 can be obtained at any time during the shutdown period, as long as the detection value of the opening sensor 82 stabilizes. Incidentally, D1 can also be obtained at any time during the shutdown period, as long as the detection value of the opening sensor 82 stabilizes.

[0044] In this embodiment, the control circuit 90 performs offset control during the opening period by fixing the opening degree of the exhaust damper 81 to a value offset by a set amount from the detection value of the opening degree sensor 82 during the closing period immediately preceding the opening period (preferably at the end of the closing period). The direction of the offset can be as follows: Figure 4 The direction of increasing the opening, as indicated by the middle arrow A1, can also be as follows: Figure 4 The direction of the reduced opening is indicated by the middle arrow A2. Although details will be described later, the offset control can suppress the effects of gas exhaust resistance variations before and after the opening, thereby suppressing pressure variations inside container 10.

[0045] The conditions for the control circuit 90 to perform offset control are, for example, satisfying the following (1) and (2). (1) During the closing period before the opening period of offset control, the substrate holding part 20 does not hold the substrate W. (2) During the closing period after the opening period of offset control, the substrate holding part 20 holds the substrate W. The case that satisfies (1) and (2) is, for example, the case where the conveying device 2 moves the first (first) substrate W of each batch from the outside of the container 10 into the inside.

[0046] Under the conditions of (1) and (2), the gas exhaust resistance after the opening period will be higher than before the opening period. Therefore, under the conditions of (1) and (2), the direction of the offset is as follows: Figure 4 The direction indicated by the middle arrow A1 is to increase the opening of the exhaust damper 81, which is the direction to open the flow path of the exhaust pipe 70. Therefore, it is possible to, after the opening period, [further action is required]. Figure 4 As indicated by the middle arrow B1, the pressure rise inside container 10 is suppressed.

[0047] The conditions for the control circuit 90 to perform offset control can also be met by satisfying the following (3) and (4). (3) During the closing period before the opening period of offset control, the substrate holding part 20 holds the substrate W. (4) During the closing period after the opening period of offset control, the substrate holding part 20 does not hold the substrate W. The case that satisfies (3) and (4) is, for example, the case where the conveying device 2 moves the last (nth) substrate W of each batch from the inside of the container 10 to the outside.

[0048] Under the conditions of (3) and (4), the gas exhaust resistance after the opening period will be lower than before the opening period. Therefore, under the conditions of (3) and (4), the direction of the offset is as follows: Figure 4 The direction indicated by the middle arrow A2 is to reduce the opening of the exhaust damper 81, which is the direction to close the flow path of the exhaust pipe 70. Therefore, it is possible to, after the opening period, […]. Figure 4 As shown by the middle arrow B2, the pressure drop inside container 10 is suppressed.

[0049] Furthermore, to improve throughput, in each batch, the removal of the i-th substrate W from the inside to the outside of container 10 and the removal of the (i+1)-th substrate W from the outside to the inside of container 10 are typically performed within the same opening period. Here, i is an integer greater than 1 and less than (n-1). When the removal of the i-th substrate W and the removal of the (i+1)-th substrate W are performed within the same opening period, the exhaust resistance of the gas is approximately the same before and after this opening period. Therefore, the opening degree during this opening period can be fixed to the second detection value D2 detected by the opening degree sensor 82 in the previous closing period (preferably at the end of the closing period). That is, offset control is not required.

[0050] The control circuit 90 calculates the setpoint (offset) based on the first detection value D1 and the second detection value D2. For example, if conditions (1) and (2) above are met, the control circuit 90 calculates, for example, (ΔD / D1×D1') as the setpoint (offset). ΔD is the difference between D1 and D2 (ΔD=|D1-D2|). D1' is the detection value of the opening sensor 82 in the previous closing period before the opening period for offset control.

[0051] If D1 and D2 are detected in the first batch, then D1' can be detected in the second and subsequent batches. Therefore, Figure 4 The offset control indicated by the middle arrow A1 is performed in the second and subsequent batches. Furthermore, D1 and D2 can be detected either before D1' or in the second and subsequent batches. If D1 and D2 are detected in the kth batch, then D1' can be detected in the (k+1)th and subsequent batches.

[0052] When using (ΔD / D1×D1') as the setpoint, compared to using ΔD as the setpoint, the effects of disturbances such as variations in the suction force of the exhaust source 73 can be reduced. If there is no disturbance, D1 and D1' are equal. However, if there is disturbance, D1 and D1' are different. When D1 and D1' are different, it is preferable to use (ΔD / D1×D1') as the setpoint.

[0053] If conditions (3) and (4) above are met, the control circuit 90 calculates, for example, (ΔD / D2×D2´) as the setpoint (offset). ΔD is the difference between D1 and D2 (ΔD=|D1-D2|). D2´ is the detection value of the opening sensor 82 in the previous closing period during the opening period for offset control.

[0054] If D1 and D2 are detected in the first batch, then D2' can be detected in subsequent batches. Therefore, Figure 4 The offset control indicated by the middle arrow A2 is performed in batches after the first one. Furthermore, D1 and D2 can be detected either before D2' or in batches after the second one. If D1 and D2 are detected in the kth batch, then D2' can be detected in batches after the kth one.

[0055] When using (ΔD / D2×D2´) as the setting value, the effects of disturbances such as variations in the suction force of the exhaust source 73 can be reduced compared to using ΔD as the setting value. If there is no disturbance, D2 and D2´ are equal. However, if there is disturbance, D2 and D2´ are different. When D2 and D2´ are different, it is preferable to use (ΔD / D2×D2´) as the setting value.

[0056] When the substrate processing apparatus 1 is equipped with the switching unit 71, the control circuit 90 can also calculate the set amount (offset) for each delivery destination of the gas flowing through the exhaust pipe 70. Even if the exhaust source 73 at the delivery destination is changed, or the suction force of the exhaust source 73 changes, its impact can be reduced.

[0057] The embodiments of the substrate processing apparatus and substrate processing method disclosed herein have been described above, but this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These, of course, also fall within the technical scope of this disclosure.

[0058] This application claims priority based on Japanese Patent Application No. 2023-175848, filed with the Japanese Patent Office on October 11, 2023, and incorporates the entire contents of Japanese Patent Application No. 2023-175848 into this application.

[0059] Symbol Explanation 1: Substrate processing device 10: Container 11: Opening 12: Gate 20: Substrate holding section 70: Exhaust pipe 81: Exhaust damper 82: Opening sensor 90: Control circuit.

Claims

1. A substrate processing apparatus comprising: container; An opening is provided in the container for the substrate to pass through; A gate, used to open and close the opening; A substrate holding part for holding the substrate inside the container; An exhaust pipe for discharging gas from the inside of the container to the outside; An exhaust damper is used to adjust the exhaust volume of the exhaust pipe. An opening sensor is used to detect the opening degree of the exhaust damper; and A control circuit is used to control the opening degree of the exhaust damper during the opening period when the gate is open and during the closing period when the gate is closed. The control circuit performs offset control during the opening period by fixing the opening degree of the exhaust damper to a value offset by a set amount from the detection value of the opening degree sensor during the previous closing period.

2. The substrate processing apparatus according to claim 1, wherein, The condition for the control circuit to perform the offset control is that the substrate holding part does not hold the substrate during the previous closing period before the opening period of the offset control, and the substrate holding part holds the substrate during the subsequent closing period of the opening period of the offset control.

3. The substrate processing apparatus according to claim 1, wherein, The condition for the control circuit to perform the offset control is that the substrate holding portion holds the substrate during the previous closing period before the opening period of the offset control, and the substrate holding portion does not hold the substrate during the subsequent closing period of the opening period of the offset control.

4. The substrate processing apparatus according to claim 1, wherein, The control circuit calculates the set value based on a first detection value and a second detection value, wherein the first detection value is the detection value of the opening sensor when the substrate holding part does not hold the substrate during the closing period, and the second detection value is the detection value of the opening sensor when the substrate holding part holds the substrate during the closing period.

5. The substrate processing apparatus according to claim 4, wherein, The control circuit performs the offset control under the condition that the substrate holding part does not hold the substrate during the closing period preceding the opening period of the offset control, and that the substrate holding part holds the substrate during the closing period following the opening period of the offset control. The control circuit calculates the product of the difference ΔD between the first detection value (D1) and the second detection value (D2) with respect to the first detection value (D1) (ΔD / D1) and the detection value (D1') of the opening sensor in the previous closing period before the opening period for offset control (ΔD / D1×D1'), as the set value. The difference ΔD between the first detection value (D1) and the second detection value (D2) is calculated as follows: ΔD = |D1 - D2|.

6. The substrate processing apparatus according to claim 4, wherein, The control circuit performs the offset control under the condition that the substrate holding portion holds the substrate during the closing period preceding the opening period of the offset control, and that the substrate holding portion does not hold the substrate during the closing period following the opening period of the offset control. The control circuit calculates the product of the difference ΔD between the first detection value (D1) and the second detection value (D2) with respect to the ratio ΔD / D2 of the second detection value (D2), and the detection value of the opening sensor (D2´) in the previous closing period before the opening period for offset control, ΔD / D2×D2´, as the set value. The difference ΔD between the first detection value (D1) and the second detection value (D2) is calculated as follows: ΔD = |D1 - D2|.

7. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes a switching unit that switches the destination of the gas flowing through the exhaust pipe according to the type of gas flowing through the exhaust pipe. The control circuit calculates the set amount for each of the delivery destinations.

8. A substrate processing method, comprising a process of processing a substrate using a substrate processing apparatus. The substrate processing apparatus includes: a container; an opening disposed in the container for allowing a substrate to pass through; a gate for opening and closing the opening; a substrate holding portion for holding the substrate inside the container; an exhaust pipe for discharging gas from inside the container to the outside; an exhaust damper for adjusting the exhaust volume of the exhaust pipe; and an opening sensor for detecting the opening degree of the exhaust damper. The substrate processing method The system includes a process for controlling the opening degree of the exhaust damper during the opening and closing periods of the opening. During the opening period, offset control is performed as follows: the opening degree of the exhaust damper is fixed at a value offset by a set amount from the detection value of the opening degree sensor during the previous closing period.

9. The substrate processing method according to claim 8, wherein, The condition for performing the offset control is that the substrate holding portion does not hold the substrate during the previous closing period before the opening period of the offset control, and the substrate holding portion holds the substrate during the subsequent closing period of the opening period of the offset control.

10. The substrate processing method according to claim 8, wherein, The condition for performing the offset control is that the substrate holding portion holds the substrate during the previous closing period before the opening period of the offset control, and the substrate holding portion does not hold the substrate during the subsequent closing period of the opening period of the offset control.

11. The substrate processing method according to claim 8, wherein, The substrate processing method includes the following steps: calculating the set amount based on the first detection value and the second detection value. The first detection value is the detection value of the opening sensor when the substrate holding part does not hold the substrate during the closing period, and the second detection value is the detection value of the opening sensor when the substrate holding part holds the substrate during the closing period.

12. The substrate processing method according to claim 11, wherein, The condition for performing the offset control is that the substrate holding portion does not hold the substrate during the closing period preceding the opening period of the offset control, and the substrate holding portion holds the substrate during the closing period following the opening period of the offset control. The substrate processing method includes the following steps: The product of the difference ΔD between the first detection value (D1) and the second detection value (D2) with respect to the first detection value (D1) (ΔD / D1) and the detection value (D1') of the opening sensor in the previous closing period during the opening period for offset control (ΔD / D1×D1') is calculated as the setpoint. The difference ΔD between the first detection value (D1) and the second detection value (D2) is calculated as follows: ΔD = |D1 - D2|.

13. The substrate processing method according to claim 11, wherein, The condition for performing the offset control is that the substrate holding portion holds the substrate during the closing period preceding the opening period of the offset control, and the substrate holding portion does not hold the substrate during the closing period following the opening period of the offset control. The substrate processing method includes the following steps: The product of the difference ΔD between the first detection value (D1) and the second detection value (D2) with respect to the ratio ΔD / D2 of the second detection value (D2), and the detection value of the opening sensor (D2') in the preceding closing period during the opening period for offset control, ΔD / D2×D2', is calculated as the setpoint. The difference ΔD between the first detection value (D1) and the second detection value (D2) is calculated as follows: ΔD = |D1 - D2|.

14. The substrate processing method according to claim 8, wherein, The substrate processing apparatus includes a switching unit that switches the destination of the gas flowing through the exhaust pipe according to the type of gas flowing through the exhaust pipe. The substrate processing method calculates the set quantity for each of the said transport destinations.

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