Capacitor and display panel

Abstract

The application provides a capacitor and a display panel. By connecting the third electrode with the first electrode or the second electrode at different temperatures, the capacitance value of the capacitor can be dynamically changed with temperature, thereby improving the problem that the same capacitance at different temperatures causes differences in the charging degree of pixels.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a capacitor and a display panel. Background Technology

[0002] In existing technologies, the mobility of thin-film transistors (TFTs) increases with increasing temperature, thus improving charging efficiency. However, the fixed capacitor has a small charging time margin in high refresh rate scenarios. The same capacitor at different temperatures can cause differences in the degree of pixel charging, which in turn causes fluctuations in display brightness. Summary of the Invention

[0003] The main technical problem addressed by this application is to provide a capacitor and a display panel that solves the problem in the prior art where the same capacitor can cause differences in pixel charging levels at different temperatures.

[0004] To solve the above-mentioned technical problems, the first technical solution provided by this application is: to provide a capacitor, wherein, a first electrode layer, a first dielectric layer, a second electrode layer, a second dielectric layer and a third electrode layer are sequentially disposed along a first direction: the first electrode layer and the second electrode layer constitute a first capacitor unit;

[0005] The on / off state between the first electrode layer and the second electrode layer is opposite to the on / off state between the first electrode layer and the third electrode layer.

[0006] When the ambient temperature is below the threshold, the second electrode layer and the third electrode layer are connected, and the capacitance value of the first capacitor unit is used as the capacitance value of the capacitor.

[0007] When the ambient temperature is not lower than the threshold, the second electrode layer and the third electrode layer are disconnected. The second electrode layer and the third electrode layer constitute the second capacitor unit. The sum of the capacitance values ​​of the first capacitor unit and the second capacitor unit is used as the capacitance value of the capacitor.

[0008] In some embodiments, the capacitor further includes a control unit that controls the on / off state between the first electrode layer and the third electrode layer in response to changes in ambient temperature.

[0009] In some embodiments, the control unit is a semiconductor switch; or the control unit is a temperature switch.

[0010] In some embodiments, the capacitor further includes a conductive portion located on the side of the second dielectric layer along the second direction and between the second electrode layer and the third electrode layer, for enabling conduction between the second electrode layer and the third electrode layer when the ambient temperature is below a threshold.

[0011] The first direction and the second direction are intersecting.

[0012] In some embodiments, the conductive part is a thermo-reversible deformation structure, and the deformation direction is parallel to the first direction;

[0013] When the ambient temperature is below the threshold, the conductive part is in the initial state; when the ambient temperature is not below the threshold, the conductive part contracts to electrically isolate the second electrode layer from the third electrode layer.

[0014] In some embodiments, the conductive portion employs at least one of a heat-shrinkable substrate, a liquid metal composite material, a thermoplastic elastomer, or a conductive filler composite material.

[0015] In some embodiments, the conductive portion includes a first conductive portion, which is disposed on the side surface of the second electrode layer facing the third electrode layer.

[0016] And / or,

[0017] The conductive portion includes a second conductive portion, which is disposed on the side surface of the third electrode layer facing the second electrode layer;

[0018] And / or,

[0019] The conductive portion includes a third conductive portion, which is disposed on the side surface of the second dielectric layer along the second direction.

[0020] In some embodiments, the second dielectric layer is a temperature-induced reversible deformation structure, and the deformation direction is parallel to the first direction; when the ambient temperature is below a threshold, the second dielectric layer is in an initial state, and the conductive parts are respectively in contact with the second electrode layer and the third electrode layer; when the ambient temperature is not below the threshold, the second dielectric layer extends along the first direction to electrically isolate the second electrode layer from the third electrode layer.

[0021] In some embodiments, the second dielectric layer is a temperature-induced reversible deformation structure, and the deformation direction is parallel to the second direction; the conductive portion is disposed on the side surface of the second dielectric layer along the second direction;

[0022] When the ambient temperature is below the threshold, the second dielectric layer is in its initial state, and the conductive part is in contact with the second electrode layer and the third electrode layer respectively. When the ambient temperature is not below the threshold, the second dielectric layer extends along the second direction to drive the conductive part to move, so that the conductive part is separated from at least one of the second electrode layer and the third electrode layer, so as to electrically isolate the second electrode layer from the third electrode layer.

[0023] To solve the above-mentioned technical problems, the first technical solution provided by this application is: to provide a display panel, which includes transistors and the aforementioned capacitors;

[0024] The transistor is connected to the capacitor.

[0025] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a capacitor and a display panel. The capacitor includes a first electrode layer, a first dielectric layer, a second electrode layer, a second dielectric layer, and a third electrode layer sequentially disposed along a first direction. The first electrode layer and the second electrode layer constitute a first capacitor unit. The on / off state between the first electrode layer and the second electrode layer is opposite to the on / off state between the first electrode layer and the third electrode layer. When the ambient temperature is below a threshold, the second electrode layer and the third electrode layer are connected, and the capacitance value of the first capacitor unit is used as the capacitance value of the capacitor. When the ambient temperature is not lower than the threshold, the second electrode layer and the third electrode layer are disconnected, and the second electrode layer and the third electrode layer constitute a second capacitor unit. The sum of the capacitance values ​​of the first capacitor unit and the second capacitor unit is used as the capacitance value of the capacitor. By connecting the third electrode to the first or second electrode at different temperatures, the capacitance value of the capacitor can be dynamically changed with temperature, thereby improving the problem of pixel charging differences caused by the same capacitance at different temperatures. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0027] Figure 1 This is a schematic diagram of a capacitor series circuit in related technologies;

[0028] Figure 2 This is a schematic diagram of a capacitor parallel circuit in related technologies;

[0029] Figure 3 This is a circuit diagram of one embodiment of a pixel circuit in related technologies;

[0030] Figure 4 This is a circuit diagram of another embodiment of the pixel circuit in the related technology;

[0031] Figure 5 This is a longitudinal structural schematic diagram of an embodiment of a capacitor in the first state provided in this application;

[0032] Figure 6 This is a top view of an embodiment of the conductive portion and the second dielectric layer provided in this application;

[0033] Figure 7 This is a top view of another embodiment of the conductive part and the second dielectric layer provided in this application;

[0034] Figure 8This is a longitudinal structural diagram of the capacitor in the second state of the first embodiment provided in this application;

[0035] Figure 9 This is a longitudinal structural schematic diagram of the second embodiment of the capacitor in the second state provided in this application;

[0036] Figure 10 This is a longitudinal structural schematic diagram of the third embodiment of the capacitor in the second state provided in this application;

[0037] Figure 11 This is a longitudinal structural schematic diagram of another embodiment of the capacitor in the first state provided in this application;

[0038] Figure 12 This is a longitudinal structural schematic diagram of the fourth embodiment of the capacitor in the second state provided in this application;

[0039] Figure 13 This is a longitudinal structural schematic diagram of the fifth embodiment of the capacitor in the second state provided in this application;

[0040] Figure 14 This is a longitudinal structural schematic diagram of the sixth embodiment of the capacitor in the second state provided in this application;

[0041] Figure 15 This is a longitudinal structural schematic diagram of the seventh embodiment of the capacitor in the second state provided in this application;

[0042] Figure 16 This is a longitudinal structural diagram of the eighth embodiment of the capacitor in the second state provided in this application;

[0043] Figure 17 This is a longitudinal structural diagram of the ninth embodiment of the capacitor in the second state provided in this application;

[0044] Figure 18 This is a schematic diagram of the structure of an embodiment of the display panel provided in this application.

[0045] Explanation of icon numbers:

[0046] 100. Display panel; 1. Capacitor; 10. First electrode layer; 20. First dielectric layer; 30. Second electrode layer; 40. Second dielectric layer; 50. Third electrode layer; 60. Control unit; 70. Conductive part; 71. First conductive part; 72. Second conductive part; 73. Third conductive part; X, First direction; Y, Second direction; D, Data line; G, Gate line; 2. Transistor. Detailed Implementation

[0047] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0048] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.

[0049] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0050] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0051] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0052] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of a capacitor series circuit in related technologies. Figure 2 This is a schematic diagram of a capacitor parallel circuit in related technologies.

[0053] like Figure 1 As shown, the calculation method for series capacitance is as follows:

[0054] Series capacitors: The formula for calculating the total capacitance c is: 1 / c = 1 / c1 + 1 / c2 + 1 / c3;

[0055] The total capacitance of a series capacitor is less than the capacitance of any single capacitor, but the voltage withstand capability is increased.

[0056] like Figure 2 As shown, the calculation method for parallel capacitors is as follows:

[0057] Parallel capacitors: The formula for calculating the total capacitance c is: c = c1 + c2 + c3;

[0058] The total capacitance of parallel capacitors is equal to the sum of the capacitance values ​​of each individual capacitor, while the withstand voltage remains constant.

[0059] Please see Figure 3 and Figure 4 , Figure 3 This is a circuit diagram of one embodiment of a pixel circuit in related technologies. Figure 4 This is a circuit diagram of another embodiment of a pixel circuit in the related technology.

[0060] like Figure 3 As shown, G and G' represent different gate lines, D and D' represent different data lines, and Com represents the common electrode. Capacitance exists between the gate line and the data line, between the gate line and the transistor, between the data line and the common electrode, and between the data line and the transistor.

[0061] like Figure 3 and Figure 4 As shown, regardless of the type of display product, the pixel area contains a pixel voltage holding capacitor, such as... Figure 3 Cs and such Figure 4 The Cst in the image refers to the pixel voltage holding capacitor, also known as the pixel storage capacitor. It consists of two electrodes with an insulating layer sandwiched between them. When the circuit is working, a transistor charges it to provide the required holding voltage.

[0062] At different temperatures, the same capacitor can cause differences in the degree of pixel charging, which in turn causes fluctuations in display brightness.

[0063] Please see Figure 5 , Figure 5 This is a longitudinal structural schematic diagram of an embodiment of a capacitor in the first state provided in this application.

[0064] To solve the above-mentioned technical problems, this application provides a capacitor 1, which includes a first electrode layer 10, a first dielectric layer 20, a second electrode layer 30, a second dielectric layer 40, and a third electrode layer 50 arranged sequentially along a first direction X. The first electrode layer 10 and the second electrode layer 30 constitute a first capacitor unit. The on / off state between the first electrode layer 10 and the second electrode layer 30 is opposite to the on / off state between the first electrode layer 10 and the third electrode layer 50. When the ambient temperature is lower than a threshold, the second electrode layer 30 and the third electrode layer 50 are connected, and the capacitance value of the first capacitor unit is used as the capacitance value of the capacitor 1. When the ambient temperature is not lower than the threshold, the second electrode layer 30 and the third electrode layer 50 are disconnected, and the second electrode layer 30 and the third electrode layer 50 constitute a second capacitor unit. The sum of the capacitance values ​​of the first capacitor unit and the second capacitor unit is used as the capacitance value of the capacitor 1.

[0065] By connecting the third electrode to the first or second electrode at different temperatures, the capacitance value of capacitor 1 can be dynamically changed with temperature, thereby improving the problem that the same capacitance can cause differences in pixel charging degree at different temperatures.

[0066] For example, when capacitor 1 is used as the pixel storage capacitor of the pixel circuit, the capacitance value of capacitor 1 is increased at high temperature in this embodiment of the application. By adjusting the load characteristics, the temperature drift of the TFT electrical parameters is balanced, thereby achieving stable charging control of the pixel voltage at different temperatures and ultimately suppressing the display brightness fluctuation caused by the difference in charging degree.

[0067] There are no restrictions on the threshold here; it can be selected according to actual needs. For example, the threshold can be set to values ​​such as 50℃, 55℃, or 60℃.

[0068] The first electrode layer 10, the first dielectric layer 20, and the second electrode together constitute the first capacitor unit.

[0069] The first dielectric layer 20 is made of organic or inorganic insulating material.

[0070] The material of the first electrode layer is not limited and can be selected according to actual needs.

[0071] When the ambient temperature is below the threshold, capacitor 1 is in the first state, the second electrode layer 30 and the third electrode layer 50 are connected, and the third electrode layer 50 and the first electrode layer 10 are disconnected, so that the second electrode layer 30 and the third electrode layer 50 together serve as the upper electrode of capacitor 1, and the first electrode layer 10 serves as the lower electrode of capacitor 1. At this time, the capacitance value of the entire capacitor 1 is provided by the first capacitor unit composed of the second electrode layer 30 and the first electrode layer 10.

[0072] When the ambient temperature is not lower than the threshold, capacitor 1 is in the second state. The second electrode layer 30 and the third electrode layer 50 are disconnected, while the third electrode layer 50 and the first electrode layer 10 are connected. This allows the first electrode layer 10 and the third electrode layer 50 to jointly serve as the upper electrode of capacitor 1, and the second electrode layer 30 to serve as the lower electrode. The second electrode layer 30, the second dielectric layer 40, and the third electrode layer 50 together constitute the second capacitor unit. At this time, the capacitance value of the entire capacitor 1 is provided by the parallel connection of the first capacitor unit and the second capacitor unit, so that the capacitance value of capacitor 1 can change with temperature. Compared with temperatures below the threshold (low temperature state), the capacitance value of capacitor 1 is larger at temperatures above the threshold (high temperature state). Increasing the capacitance value of capacitor 1 at high temperatures "offsets" the problem of excessively fast charging speed caused by the increase in TFT mobility, thereby maintaining the consistency of pixel voltage at different temperatures and eliminating brightness fluctuations.

[0073] For example, in the first electrode layer 10, the first dielectric layer 20, the second electrode layer 30, the second dielectric layer 40 and the third electrode layer 50 arranged sequentially along the first direction X, adjacent two layers are in contact with each other.

[0074] In some embodiments, the capacitor 1 further includes a control unit 60, which controls the on / off state between the first electrode layer 10 and the third electrode layer 50 in response to changes in ambient temperature.

[0075] When the ambient temperature is below the threshold, the control unit 60 controls the first electrode layer 10 and the third electrode layer 50 to disconnect; when the ambient temperature is not below the threshold, the control unit 60 controls the first electrode layer 10 and the third electrode layer 50 to connect.

[0076] By adding control unit 60, the switching threshold of the on / off state becomes adjustable, thereby enabling more precise dynamic adjustment of the capacitance value; this is beneficial for maintaining charging stability in display environments with large temperature fluctuations; and it can improve the adaptive adjustment capability of capacitor 1.

[0077] In some specific embodiments, the control unit 60 is a semiconductor switch.

[0078] For example, the semiconductor switch is a switching element such as a MOSFET (field-effect transistor), an IGBT (insulated gate bipolar transistor), or a thin-film transistor, which controls the on / off state through an electrical signal.

[0079] One end of the semiconductor switch is connected to the first electrode layer 10, and the other end is connected to the third electrode layer 50. The control terminal of the semiconductor switch receives a temperature signal to control the opening and closing of the semiconductor switch. Specifically, when the ambient temperature is lower than a threshold, the semiconductor switch receives a first temperature signal and controls the semiconductor switch to turn off; when the ambient temperature is not lower than the threshold, the semiconductor switch receives a second temperature signal and controls the semiconductor switch to turn on.

[0080] By employing semiconductor switches, the on / off switching threshold can be precisely adjusted, thereby enabling dynamic adjustment of the capacitance value as temperature changes.

[0081] In some other embodiments, the control unit 60 is a temperature switch.

[0082] For example, the temperature switch is a bimetallic strip switch or a thermistor switch, which directly responds to temperature changes by physically changing the on / off state. It does not require external circuitry and achieves automatic switching through the thermal expansion or contraction of materials, thus enabling passive adaptive regulation.

[0083] When the ambient temperature is below the threshold, the temperature switch is turned off to disconnect the electrical connection between the first electrode layer 10 and the third electrode layer 50; when the ambient temperature is not lower than the threshold, the temperature switch is turned on to connect the first electrode layer 10 and the third electrode layer 50.

[0084] By employing a temperature switch, the structure of the control unit 60 is simplified, eliminating the need for an external temperature detection circuit. This avoids additional circuitry occupying the effective area of ​​the panel, which is beneficial for achieving adaptive capacitance adjustment at the pixel level.

[0085] In some embodiments, the capacitor 1 further includes a conductive portion 70 located on the side of the second dielectric layer 40 along the second direction Y and between the second electrode layer 30 and the third electrode layer 50, for enabling conduction between the second electrode layer 30 and the third electrode layer 50 when the ambient temperature is below a threshold; wherein the first direction X and the second direction Y are intersected.

[0086] The conductive part 70 is made of a temperature-sensitive material. When it contracts at low temperatures, it contacts the second electrode layer 30 and the third electrode layer 50 to form a conductive path. When it expands at high temperatures, it separates and disconnects.

[0087] Specifically, when the ambient temperature is below a threshold, the conductive part 70 is in contact with the second electrode layer 30 and the third electrode layer 50 respectively, so as to make the first electrode layer 10 and the third electrode layer 50 conductive.

[0088] When the ambient temperature is not lower than the threshold, the conductive part 70 separates from the second electrode layer 30 and / or the third electrode layer 50, so as to disconnect the electrical connection between the first electrode layer 10 and the third electrode layer 50.

[0089] For example, the first direction X is perpendicular to the second direction Y. The plate surface of capacitor 1 is perpendicular to the first direction X. In other embodiments, the first direction X is inclined to the second direction Y, and the plate surface of capacitor 1 is inclined to the first direction X.

[0090] Please see Figures 5 to 7 , Figure 6 This is a top view schematic diagram of an embodiment of the conductive part and the second dielectric layer provided in this application. Figure 7 This is a top view of another embodiment of the conductive part and the second dielectric layer provided in this application.

[0091] The conductive part 70 may be one or more. For example, such as Figure 6 As shown, there are two conductive portions 70, located on opposite sides of the second dielectric layer 40. Figure 7 As shown, there is one conductive part 70, which is disposed around the second dielectric layer 40.

[0092] The conductive part 70 and the second dielectric layer 40 can be spaced apart or in contact.

[0093] The conductive portion 70 is located on at least one side of the second dielectric layer 40 along the second direction Y. Exemplarily, the conductive portion 70 is located on one side of the second dielectric layer 40 along the second direction Y, or the conductive portion 70 is disposed to partially surround the second dielectric layer 40, or the conductive portion 70 is disposed to surround the second dielectric layer 40.

[0094] By positioning the conductive portion 70 on the side of the second dielectric layer 40 and between the second electrode layer 30 and the third electrode layer 50, the first electrode layer 10 and the third electrode layer 50 are made conductive when the ambient temperature is not lower than a threshold, thereby increasing the capacitance value. This improves the problem of pixel charging differences caused by the same capacitance at different temperatures; further enhances the adaptive adjustment of capacitor 1, and eliminates the need for an external temperature sensor and feedback circuit, saving display panel 100 (see...). Figure 18 The effective area of ​​).

[0095] In some embodiments, the conductive portion 70 is a temperature-induced reversible deformation structure, and the deformation direction is parallel to the first direction X; when the ambient temperature is below a threshold, the conductive portion 70 is in the initial state; when the ambient temperature is not below the threshold, the conductive portion 70 contracts to electrically isolate the second electrode layer 30 from the third electrode layer 50.

[0096] The conductive part 70 has the characteristics of shrinking at high temperatures and recovering at low temperatures. Specifically, the conductive part 70 can stretch or shrink along the first direction X when affected by temperature.

[0097] For example, in this embodiment, the second dielectric layer 40 is made of organic or inorganic insulating material. The materials of the first dielectric layer 20 and the second dielectric layer 40 can be the same or different.

[0098] When the ambient temperature is below the threshold, the conductive part 70 is in an extended state or a natural state, contacting the second electrode layer 30 and the third electrode layer 50 respectively, thereby achieving conductivity between the second electrode layer 30 and the third electrode layer 50. When the ambient temperature is not lower than the threshold, the conductive part 70 is in a contracted state, shortening in length, so that the conductive part 70 separates from the second electrode layer 30 and / or the third electrode layer 50, thereby achieving disconnection between the second electrode layer 30 and the third electrode layer 50.

[0099] By setting the conductive part 70 as a temperature-induced reversible deformation structure with the deformation direction parallel to the first direction X, the deformation process of the conductive part 70 is carried out along a preset direction, avoiding electrode short circuits or poor contact caused by lateral displacement, which is beneficial to improving the stability and reliability of electrode connection switching; by achieving electrical isolation by having the conductive part 70 contract along the first direction X when the ambient temperature is not lower than the threshold, the capacitance value increases in the high-temperature environment, which is beneficial to compensate for the increase in charging efficiency caused by the increase in the mobility of TFT devices, thereby achieving dynamic stability of display brightness.

[0100] In some embodiments, the conductive portion 70 is made of at least one of a heat-shrinkable substrate, a liquid metal composite material, a thermoplastic elastomer, or a conductive filler composite material.

[0101] Please see Figure 5 , Figures 8 to 14 , Figure 8 This is a longitudinal structural diagram of the capacitor in the second state of the first embodiment provided in this application. Figure 9 This is a longitudinal structural schematic diagram of the second embodiment of the capacitor in the second state provided in this application. Figure 10 This is a longitudinal structural diagram of the third embodiment of the capacitor in the second state provided in this application. Figure 11 This is a longitudinal structural schematic diagram of another embodiment of the capacitor in the first state provided in this application. Figure 12 This is a longitudinal structural schematic diagram of the fourth embodiment of the capacitor in the second state provided in this application. Figure 13 This is a longitudinal structural schematic diagram of the fifth embodiment of the capacitor in the second state provided in this application. Figure 14 This is a longitudinal structural schematic diagram of the sixth embodiment of the capacitor in the second state provided in this application.

[0102] In some embodiments, the conductive portion 70 includes a first conductive portion 71 disposed on a side surface of the second electrode layer 30 facing the third electrode layer 50; and / or, the conductive portion 70 includes a second conductive portion 72 disposed on a side surface of the third electrode layer 50 facing the second electrode layer 30; and / or, the conductive portion 70 includes a third conductive portion 73 disposed on a side surface of the second dielectric layer 40 along the second direction Y.

[0103] In some specific embodiments, such as Figure 8 As shown, the first conductive portion 71 is disposed on the surface of the second electrode layer 30 facing the third electrode layer 50. The first conductive portion 71 and the second electrode layer 30 can be made of the same material or different materials; no particular restrictions are imposed here, and the choice is made according to actual needs. The first conductive portion 71 at least partially surrounds the side of the second dielectric layer 40.

[0104] It should be noted that, in this application, the side of the second dielectric layer 40 refers to the side of the second dielectric layer 40 along the second direction Y.

[0105] Specifically, when the ambient temperature is below a threshold, the first conductive part 71 is in contact with the third electrode layer 50, thereby making the second electrode layer 30 and the third electrode layer 50 electrically connected. When the ambient temperature is not lower than the threshold, the first conductive part 71 is in a contracted state, its length shortens, so that the first conductive part 71 separates from the third electrode layer 50, thereby breaking the electrical connection between the second electrode layer 30 and the third electrode layer 50. That is, the first conductive part 71 contracts or expands in one direction only.

[0106] In other embodiments, the second electrode layer 30 and the first conductive portion 71 may be integrally formed.

[0107] In other specific embodiments, such as Figure 9 As shown, the conductive portion 70 includes a second conductive portion 72, which is disposed on the surface of the third electrode layer 50 facing the second electrode layer 30. The second conductive portion 72 and the third electrode layer 50 can be made of the same material or different materials; no particular restrictions are imposed here, and the choice is made according to actual needs. The second conductive portion 72 at least partially surrounds the side of the second dielectric layer 40.

[0108] Specifically, when the ambient temperature is below a threshold, the second conductive part 72 is in contact with the second electrode layer 30, thereby making the second electrode layer 30 and the third electrode layer 50 electrically connected. When the ambient temperature is not lower than the threshold, the conductive part 70 is in a contracted state, its length shortens, so that the second conductive part 72 separates from the second electrode layer 30, thereby breaking the electrical connection between the second electrode layer 30 and the third electrode layer 50. That is, the second conductive part 72 contracts or extends in one direction.

[0109] In other embodiments, the third electrode layer 50 and the second conductive portion 72 may be integrally formed.

[0110] In other specific embodiments, such as Figure 10 As shown, the conductive portion 70 includes a third conductive portion 73, which is disposed on the side surface of the second dielectric layer 40 along the second direction Y. The third conductive portion 73 and the second electrode layer 30 or the third electrode layer 50 may be made of the same material or different materials; no particular restrictions are imposed here, and the choice is made according to actual needs. The third conductive portion 73 at least partially surrounds the side edge of the second dielectric layer 40.

[0111] Specifically, when the ambient temperature is below a threshold, the third conductive portion 73 is in contact with both the second electrode layer 30 and the third electrode layer 50, thereby establishing electrical connection between the second electrode layer 30 and the third electrode layer 50. When the ambient temperature is not below the threshold, the third conductive portion 73 is in a contracted state and contracts at least one end along the first direction X, shortening its length to separate the third conductive portion 73 from the second electrode layer 30, and / or to separate the third conductive portion 73 from the third electrode layer 50, thereby disconnecting the electrical connection between the second electrode layer 30 and the third electrode layer 50. For example, when the third conductive portion 73 is in a contracted state, the end of the third conductive portion 73 closest to the second electrode layer 30 contracts to separate from the second electrode layer 30; or the end of the second conductive portion 72 closest to the third electrode layer 50 contracts to separate from the third electrode layer 50; or both ends of the second conductive portion 72 contract along the first direction X to separate from the second electrode layer 30 and the third electrode layer 50, respectively. That is, the third conductive part 73 can contract or extend in one direction or in both directions.

[0112] In some other specific embodiments, the conductive part 70 includes a first conductive part 71 and a second conductive part 72. The first conductive part 71 and the second conductive part 72 can be arranged opposite to each other or staggered in the first direction X.

[0113] For example, such as Figure 11 and Figure 12 As shown, the first conductive portion 71 and the second conductive portion 72 are disposed opposite each other in the first direction X. When the ambient temperature is below a threshold, the first conductive portion 71 and the second conductive portion 72 are in contact, thereby making the second electrode layer 30 and the third electrode layer 50 electrically connected. When the ambient temperature is not lower than the threshold, the ends of the first conductive portion 71 and the second conductive portion 72 that are close to each other contract, so that the first conductive portion 71 and the second conductive portion 72 are separated, thereby breaking the electrical connection between the second electrode layer 30 and the third electrode layer 50.

[0114] For example, such as Figure 13As shown, the first conductive part 71 and the second conductive part 72 are offset from each other in the first direction X. In the plate direction of the capacitor 1, the first conductive part 71 and the second conductive part 72 are spaced apart to avoid interference between them during deformation. When the ambient temperature is below a threshold, the first conductive part 71 contacts the third electrode layer 50, and the second conductive part 72 contacts the second electrode layer 30, thereby making the second electrode layer 30 and the third electrode layer 50 electrically connected. When the ambient temperature is not lower than the threshold, the end of the first conductive part 71 near the third electrode layer 50 contracts, and the end of the second conductive part 72 near the second electrode layer 30 contracts, thereby breaking the electrical connection between the second electrode layer 30 and the third electrode layer 50.

[0115] In other specific embodiments, such as Figure 14 As shown, the conductive part 70 includes a first conductive part 71 and a third conductive part 73. The first conductive part 71 and the third conductive part 73 can be arranged opposite to each other or staggered in the first direction X.

[0116] For example, the first conductive part 71 and the third conductive part 73 are disposed opposite each other in the first direction X (the arrangement of the first conductive part 71 and the third conductive part 73 can be referred to...). Figure 12 (The arrangement of the first conductive part 71 and the second conductive part 72). When the ambient temperature is below a threshold, the first conductive part 71 and the third conductive part 73 are in contact, and the third conductive part 73 is in contact with the third electrode layer 50, so that the second electrode layer 30 and the third electrode layer 50 are electrically connected. When the ambient temperature is not lower than the threshold, the end of the first conductive part 71 near the third conductive part 73 contracts to separate the first conductive part 71 and the third conductive part 73 and space them apart. The end of the third conductive part 73 near the third electrode layer 50 contracts or both ends of the third conductive part 73 along the first direction X contract to separate the third conductive part 73 from the third electrode layer 50, thereby disconnecting the electrical connection between the second electrode layer 30 and the third electrode layer 50.

[0117] For example, such as Figure 14 As shown, the first conductive part 71 and the third conductive part 73 are offset from each other in the first direction X. The arrangement of the first conductive part 71 refers to the arrangement of the first conductive part 71 in the embodiment where only the first conductive part 71 is included in the conductive part 70, and the arrangement of the third conductive part 73 refers to the arrangement of the third conductive part 73 in the embodiment where only the third conductive part 73 is included in the conductive part 70, which will not be described again here. In the plate direction of the capacitor 1, the first conductive part 71 and the third conductive part 73 are spaced apart to avoid interference between them when they deform.

[0118] In some other specific embodiments, the conductive part 70 includes a second conductive part 72 and a third conductive part 73. The second conductive part 72 and the third conductive part 73 can be arranged opposite to each other or staggered in the first direction X. For specific details, refer to the embodiment in which the conductive part 70 includes a first conductive part 71 and a third conductive part 73, which will not be repeated here.

[0119] In some other embodiments, the conductive portion 70 includes a first conductive portion 71, a second conductive portion 72, and a third conductive portion 73. In some embodiments, when any two of the first conductive portion 71, the second conductive portion 72, and the third conductive portion 73 are arranged opposite each other in the first direction X, the oppositely arranged portions are spaced apart from each other. For example, if the first conductive portion 71 and the second conductive portion 72 are arranged opposite each other in the first direction X, then the third conductive portion 73 is spaced apart from the first conductive portion 71 and the second conductive portion 72 in the plate direction of the capacitor 1 to avoid mutual interference during deformation. In some other embodiments, any two of the first conductive portion 71, the second conductive portion 72, and the third conductive portion 73 are staggered in the first direction X and spaced apart from each other to avoid mutual interference during deformation. In some other embodiments, the third conductive portion 73 is arranged opposite to the first conductive portion 71 and the second conductive portion 72 in the first direction X. The specific arrangement of the first conductive portion 71, the second conductive portion 72, and the third conductive portion 73 is as described above and will not be repeated here.

[0120] In the above embodiments, both the second electrode layer 30 and the third electrode layer 50 are plate-shaped structures. When the ambient temperature is below a threshold, the capacitance of capacitor 1 is the capacitance value of the first capacitor unit.

[0121] The capacitance value of the first capacitor unit is C1 = εr0 * εr1 * s1 / d0.

[0122] The capacitance of capacitor 1 is C = C1.

[0123] Wherein, εr0 is the dielectric constant of vacuum, also known as vacuum permittivity; εr1 is the relative dielectric constant of the material of the first dielectric layer 20; s1 is the effective area of ​​the first capacitor unit, that is, the overlapping projected area of ​​the second electrode layer 30, the first electrode layer 10 and the first dielectric layer 20 facing each other; d0 is the distance between the first electrode layer 10 and the second electrode layer 30.

[0124] When the ambient temperature is below the threshold, the capacitance of capacitor 1 is the sum of the capacitance values ​​of the first capacitor unit and the second capacitor unit.

[0125] The capacitance value of the first capacitor unit is C1 = εr0 * εr1 * s1 / d0.

[0126] The capacitance value of the second capacitor unit is C2 = εr0 * εr2 * s2 / d.

[0127] The capacitance of capacitor 1 is C = C1 + C2.

[0128] Where: εr2 is the relative permittivity of the material of the second dielectric layer 40; s2 is the effective area of ​​the second capacitor unit, that is, the overlapping projected area of ​​the second electrode layer 30, the third electrode layer 50 and the second dielectric layer 40 facing each other; d is the distance between the third electrode layer 50 and the second electrode layer 30.

[0129] Therefore, when the ambient temperature is above the threshold, the capacitance of capacitor 1 is greater than when the ambient temperature is below the threshold, making the capacitance of capacitor 1 adjustable with temperature.

[0130] For example, the third electrode layer 50 and / or the second electrode layer 30 are made of flexible conductive materials, such as graphene conductive materials, carbon nanotubes / fibers, organic conductive polymers such as polyaniline.

[0131] Please see Figure 5 , Figures 15 to 17 , Figure 15 This is a longitudinal structural diagram of the seventh embodiment of the capacitor in the second state provided in this application. Figure 16 This is a longitudinal structural diagram of the eighth embodiment of the capacitor in the second state provided in this application. Figure 17 This is a longitudinal structural schematic diagram of the ninth embodiment of the capacitor in the second state provided in this application.

[0132] In some embodiments, the second dielectric layer 40 is a temperature-induced reversible deformation structure, and the deformation direction is parallel to the first direction X; when the ambient temperature is below a threshold, the second dielectric layer 40 is in an initial state, and the conductive portion 70 is in contact with the second electrode layer 30 and the third electrode layer 50 respectively; when the ambient temperature is not below the threshold, the second dielectric layer 40 extends along the first direction X to electrically isolate the second electrode layer 30 and the third electrode layer 50.

[0133] For example, when the ambient temperature is below a threshold, the second dielectric layer 40 is in a contracted state or a natural state. When the ambient temperature is not below the threshold, the end of the second dielectric layer 40 away from the second electrode layer 30 extends along the first direction X, thereby causing the third electrode layer 50 to shift away from the second electrode layer 30, increasing the distance between the second electrode layer 30 and the third electrode layer 50, thereby disconnecting the electrical connection between the second electrode layer 30 and the third electrode layer 50.

[0134] For example, the second dielectric layer 40 is a special functional temperature-sensitive insulating material, whose composition can be adjusted according to requirements, such as a porous dielectric elastomer composite material, whose phase transition temperature can be adjusted to 50~65℃, expanding at high temperatures and contracting at low temperatures (<50℃). After expansion, the dielectric constant increases with the amount of expansion.

[0135] In some specific embodiments, the conductive portion 70 is not a thermo-reversible deformation structure, that is, the conductive portion 70 does not deform with temperature changes. In some embodiments, such as Figure 15 As shown, the conductive portion 70 includes the aforementioned first conductive portion 71. When the ambient temperature is not lower than a threshold value, the second dielectric layer 40 elongates, causing the third electrode layer 50 to separate from the first conductive portion 71, thereby disconnecting the electrical connection between the second electrode layer 30 and the third electrode layer 50. In other embodiments, such as Figure 16 As shown, the conductive portion 70 includes the aforementioned second conductive portion 72. When the ambient temperature is not lower than a threshold, the second dielectric layer 40 elongates, causing the second conductive portion 72 to separate from the second electrode layer 30, thereby disconnecting the electrical connection between the second electrode layer 30 and the third electrode layer 50. In other embodiments, the conductive portion 70 includes the aforementioned first conductive portion 71 and second conductive portion 72. When the ambient temperature is not lower than a threshold, when the first conductive portion 71 and the second conductive portion 72 are positioned opposite each other in the first direction X, the second dielectric layer 40 elongates, causing the second conductive portion 72 to separate from the first conductive portion 71; or when the first conductive portion 71 and the second conductive portion 72 are misaligned in the first direction X, the second dielectric layer 40 elongates, causing the first conductive portion 71 to separate from the third electrode layer 50 and the second conductive portion 72 to separate from the second electrode layer 30, thereby disconnecting the electrical connection between the second electrode layer 30 and the third electrode layer 50.

[0136] Specifically, both the second electrode layer 30 and the third electrode layer 50 are plate-like structures. When the ambient temperature is below the threshold, the capacitance of capacitor 1 is the capacitance value of the first capacitor unit.

[0137] The capacitance value of the first capacitor unit is C1 = εr0 * εr1 * s1 / d0.

[0138] The capacitance of capacitor 1 is C = C1.

[0139] When the ambient temperature is below the threshold, the capacitance of capacitor 1 is the sum of the capacitance values ​​of the first capacitor unit and the second capacitor unit.

[0140] The capacitance value of the first capacitor unit is C1 = εr0 * εr1 * s1 / d0.

[0141] The capacitance value of the second capacitor unit is C2 = εr0 * εr2' * s2 / d'. Where d' is greater than d.

[0142] The capacitance of capacitor 1 is C = C1 + C2.

[0143] Where: εr2' is the relative permittivity of the material after the deformation of the second dielectric layer 40; s2 is the effective area of ​​the second capacitor unit, that is, the overlapping projected area of ​​the second electrode layer 30, the third electrode layer 50 and the second dielectric layer 40 facing each other; d' is the distance between the third electrode layer 50 and the second electrode layer 30 when the ambient temperature is not lower than the threshold.

[0144] Therefore, it can be concluded that when the ambient temperature is above the threshold, compared to when the ambient temperature is below the threshold, the capacitance of capacitor 1 is larger, making the capacitance of capacitor 1 adjustable with temperature. Furthermore, the capacitance C2 of the second capacitor unit can be increased by adjusting the εr2' / d' ratio as the temperature rises, thus achieving a controllable increase in capacitance as the temperature increases.

[0145] In some other specific embodiments, the second dielectric layer 40 and the conductive portion 70 are both thermo-reversible deformation structures, as described above, and will not be repeated here.

[0146] In other embodiments, the second dielectric layer 40 has a temperature-induced reversible deformation structure, and the deformation direction is parallel to the second direction Y; the second direction Y intersects with the first direction X and is also intersected with the second direction Y; the conductive portion 70 is disposed on the side surface of the second dielectric layer 40 along the second direction Y; such as Figure 5 As shown, when the ambient temperature is below the threshold, the second dielectric layer 40 is in its initial state, and the conductive portion 70 is in contact with the second electrode layer 30 and the third electrode layer 50, respectively; as Figure 17 As shown, when the ambient temperature is not lower than the threshold, the second dielectric layer 40 extends along the second direction Y to drive the conductive part 70 to move, so that the conductive part 70 is separated from at least one of the second electrode layer 30 and the third electrode layer 50, so as to electrically isolate the second electrode layer 30 from the third electrode layer 50.

[0147] For example, the second direction Y is perpendicular to the first direction X. In other embodiments, the second direction Y may be inclined to the first direction X.

[0148] The second direction Y can be a straight line or a plane direction, depending on the position of the conductive part 70. For example, if the conductive part 70 is located on one side of the second dielectric layer 40, the second direction Y is a vector direction, and the extension direction of the second dielectric layer 40 is unidirectional. If the conductive part 70 is located on opposite sides of the second dielectric layer 40, the second direction Y is a non-vector straight line direction, and the extension direction of the second dielectric layer 40 is bidirectional and opposite. If the conductive part 70 is located on multiple sides of the second dielectric layer 40, the second direction Y is a plane direction, and the extension direction of the second dielectric layer 40 is a plane direction; that is, when the ambient temperature is higher than a threshold, the entire side of the second dielectric layer 40 expands outward.

[0149] In this embodiment, the conductive portion 70 includes only the third conductive portion 73. In some embodiments, when one end of the second electrode layer 30 that contacts the third conductive portion 73 extends beyond the third electrode layer 50 along the second direction Y, and when the ambient temperature is not lower than a threshold, the second dielectric layer 40 elongates to displace the conductive portion 70, thereby separating the third conductive portion 73 from the third electrode layer 50. In other embodiments, when one end of the third electrode layer 50 that contacts the third conductive portion 73 extends beyond the second electrode layer 30 along the second direction Y, and when the ambient temperature is not lower than a threshold, the second dielectric layer 40 elongates to displace the conductive portion 70, thereby separating the third conductive portion 73 from the second electrode layer 30. In other embodiments, when one end of the second electrode layer 30 that contacts the third conductive portion 73 is flush with the third electrode layer 50 or the elongation of the second dielectric layer 40 is sufficiently large, and when the ambient temperature is not lower than a threshold, the second dielectric layer 40 elongates to displace the conductive portion 70, thereby separating the third conductive portion 73 from both the third electrode layer 50 and the second electrode layer 30.

[0150] Please see Figure 18 , Figure 18 This is a schematic diagram of the structure of an embodiment of the display panel provided in this application.

[0151] This application provides a display panel 100, wherein the display panel 100 includes a transistor 2 and the capacitor 1 described above. The transistor 2 is connected to the capacitor 1.

[0152] The display panel 100 can be a liquid crystal panel, an LED (Light Emitting Diode) panel, or an OLED (Organic Light Emitting Diode) panel.

[0153] For example, transistor 2 is a thin-film transistor whose mobility varies with temperature; specifically, the mobility increases with increasing temperature.

[0154] For example, capacitor 1 may be a pixel storage capacitor in the pixel circuit within the display panel 100. Specifically, the display panel 100 includes a pixel circuit, and transistor 2 is connected to data line D and gate line G respectively, charging capacitor 1 via transistor 2.

[0155] In other embodiments, capacitor 1 may be a capacitor in other circuits.

[0156] By setting the capacitor 1 in this application, the capacitance value is dynamically adjusted with temperature changes, thereby compensating for changes in transistor mobility; this facilitates adaptive capacitance adjustment at the pixel level, avoiding the use of external temperature sensors and feedback circuits; and effectively suppresses display brightness fluctuations, improving display quality.

[0157] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0158] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A capacitor characterized by, It includes a first electrode layer, a first dielectric layer, a second electrode layer, a second dielectric layer, and a third electrode layer arranged sequentially along a first direction: the first electrode layer and the second electrode layer constitute a first capacitor unit; Wherein, the on / off state between the first electrode layer and the second electrode layer is opposite to the on / off state between the first electrode layer and the third electrode layer; When the ambient temperature is below the threshold, the second electrode layer and the third electrode layer are connected, and the capacitance value of the first capacitor unit is used as the capacitance value of the capacitor. When the ambient temperature is not lower than the threshold, the second electrode layer and the third electrode layer are disconnected. The second electrode layer and the third electrode layer constitute a second capacitor unit. The sum of the capacitance values ​​of the first capacitor unit and the second capacitor unit is used as the capacitance value of the capacitor.

2. The capacitor of claim 1, wherein The capacitor also includes a control unit that controls the on / off state between the first electrode layer and the third electrode layer in response to changes in ambient temperature.

3. The capacitor of claim 2, wherein The control unit is a semiconductor switch; or the control unit is a temperature switch.

4. The capacitor of claim 2, wherein The capacitor further includes a conductive portion located on the side of the second dielectric layer along the second direction and between the second electrode layer and the third electrode layer, for enabling conduction between the second electrode layer and the third electrode layer when the ambient temperature is below a threshold. The first direction and the second direction are intersecting.

5. The capacitor of claim 4, wherein The conductive part is a thermo-reversible deformation structure, and the deformation direction is parallel to the first direction; When the ambient temperature is below the threshold, the conductive part is in the initial state; when the ambient temperature is not below the threshold, the conductive part contracts to electrically isolate the second electrode layer from the third electrode layer.

6. The capacitor of claim 5, wherein The conductive part is made of at least one of heat-shrinkable substrate, liquid metal composite material, thermoplastic elastomer or conductive filler composite material.

7. The capacitor according to claim 4 or 5, characterized in that The conductive portion includes a first conductive portion, which is disposed on the side surface of the second electrode layer facing the third electrode layer; And / or, The conductive portion includes a second conductive portion, which is disposed on the side surface of the third electrode layer facing the second electrode layer. And / or, The conductive portion includes a third conductive portion, which is disposed on the side surface of the second dielectric layer along the second direction.

8. The capacitor according to claim 4 or 5, characterized in that, The second dielectric layer is a temperature-induced reversible deformation structure, and the deformation direction is parallel to the first direction. When the ambient temperature is lower than the threshold, the second dielectric layer is in the initial state, and the conductive part is in contact with the second electrode layer and the third electrode layer respectively. When the ambient temperature is not lower than the threshold, the second dielectric layer extends along the first direction to electrically isolate the second electrode layer from the third electrode layer.

9. The capacitor of claim 4 or 5, wherein The second dielectric layer has a temperature-induced reversible deformation structure, and the deformation direction is parallel to the second direction; the conductive part is disposed on the side surface of the second dielectric layer along the second direction; When the ambient temperature is below the threshold, the second dielectric layer is in its initial state, and the conductive part is in contact with the second electrode layer and the third electrode layer respectively; when the ambient temperature is not below the threshold, the second dielectric layer extends along the second direction to drive the conductive part to move, so that the conductive part is separated from at least one of the second electrode layer and the third electrode layer, so that the second electrode layer and the third electrode layer are electrically isolated.

10. A display panel, characterized by, Includes transistors and capacitors as described in any one of claims 1 to 9; The transistor is connected to the capacitor.

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