A metal wire manufacturing method and a semiconductor structure

By forming a trench intermediate structure on a ruthenium metal layer and depositing a carbon-based protective layer, combined with multiple etching and cleaning processes, the problem of poor sidewall roughness in traditional etching processes was solved, enabling the fabrication and good connection of high aspect ratio metal lines, thus meeting the technical requirements of advanced nodes.

CN121985806BActive Publication Date: 2026-06-09SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
Filing Date
2026-04-07
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

At advanced nodes, the poor sidewall roughness in traditional ruthenium (Ru) etching processes leads to the risk of short circuits or open circuits, and affects overlay accuracy and interconnect quality, making it difficult to fabricate high aspect ratio metal lines.

Method used

An etching process using oxygen-containing and chlorine-containing gases is employed to form a trench structure on the ruthenium metal layer, and a carbon-based protective layer is deposited on the sidewall. Through multiple etching and cleaning processes, a continuous metal line is formed, including the first etching, deposition of the carbon-based protective layer, the second etching, and the third etching. Combined with hydrogen-containing gas cleaning, the etching uniformity and verticality are ensured.

Benefits of technology

It significantly improves the linewidth uniformity and interconnection density of metal lines, reduces the risk of short circuits or open circuits, ensures good connection with upper metal vias, and meets the technical requirements of advanced nodes.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121985806B_ABST
    Figure CN121985806B_ABST
Patent Text Reader

Abstract

The embodiment of the application discloses a metal wire manufacturing method and a semiconductor structure, which comprises the following steps: forming a metal layer of a ruthenium material on a substrate; performing first etching on the metal layer to form a groove intermediate structure; depositing a carbon-based protective layer on the inner wall of the groove intermediate structure; performing second etching on the carbon-based protective layer on the bottom of the groove intermediate structure to remove the carbon-based protective layer, and performing oxidation on the exposed surface of the ruthenium material to form a ruthenium dioxide surface layer; performing third etching on the ruthenium dioxide surface layer to remove the ruthenium dioxide surface layer and expose the surface of the underlying ruthenium material, so that the first etching is performed again; the process of the first etching, the deposition of the carbon-based protective layer, the second etching and the third etching is repeatedly performed in sequence until the groove completion structure and the metal wires divided by the groove completion structure are formed; and the groove sidewall is cleaned. The embodiment of the application can improve the sidewall roughness difference problem from the source in the etching process, reduce the risk of short circuit or open circuit, and realize lower resistance and interconnection stability.
Need to check novelty before this filing date? Find Prior Art