Metal mask for high-pixel oled and method of producing the same
By designing interconnected etching holes on the upper and lower sides of the metal mask and optimizing etching parameters, the processing difficulty and thickness uniformity issues of high PPI metal masks were solved, achieving high-yield screen production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHEJIANG ZHONGLING TECH CO LTD
- Filing Date
- 2024-12-24
- Publication Date
- 2026-06-26
AI Technical Summary
In the existing technology, high PPI metal photomasks are difficult to process, have poor uniformity in thickness, resulting in differences in through-hole characteristic values and additional process losses. Furthermore, excessively thin plates are prone to deformation, which affects the vapor deposition effect.
The metal mask plate body is designed with upper etch holes on the upper side and lower etch holes on the lower side, and adjacent lower etch holes are connected. The ratio of H2 to H1 is controlled between 1/4 and 3/4. Through holes are formed through the etching process, the thickness in the middle is reduced, and the etching parameters are adjusted during the main etching stage to adjust the through hole structure.
This technology achieves a higher through-hole cone angle than the evaporation angle without reducing the thickness of the substrate, thereby increasing the screen production yield, reducing the island bridge volume, enhancing the strength of the metal mask, and preventing deformation.
Smart Images
Figure CN122279475A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of photomask manufacturing technology, and more specifically, to a metal photomask for high-pixel OLEDs and a method for manufacturing the same. Background Technology
[0002] As terminal display products upgrade, the requirements for display effects become more stringent, and the demand for products with higher PPI (Pixels Per Inch) is increasing. This also necessitates the production of metal masks with higher PPI for vapor deposition. Currently, the production of high PPI metal masks mainly focuses on reducing the thickness of the metal sheet to meet the requirements for via angle at high PPI. However, the thinner the metal sheet, the higher the processing difficulty, the greater the process loss, and the more difficult it is to ensure the uniformity of the sheet thickness. This leads to differences in the characteristic values of in-plane vias and additional process losses.
[0003] Furthermore, high PPI products are characterized by smaller design spacing. Under the same board thickness, their through-hole structure taper angle will be larger, which is insufficient to meet the requirement of being smaller than the evaporation angle. Therefore, reducing the Invar thickness becomes the main way to achieve the required taper angle. Although reducing the board thickness can achieve control of the through-hole structure angle, as PPI continues to increase, the board thickness cannot be reduced indefinitely. Moreover, when the board thickness is too low, its strength will be weak, which will easily cause deformation, leading to wrinkles, creases and other problems in the FMM, which will have an adverse effect on the evaporation effect. Summary of the Invention
[0004] The purpose of this invention is to provide a metal mask for high-pixel OLEDs and a method for producing the same, so as to alleviate the technical problem that it is difficult to guarantee the quality of metal mask processed by reducing the thickness of the substrate in the prior art.
[0005] In a first aspect, embodiments of the present invention provide a metal mask for high-pixel OLEDs, comprising a metal mask body, an upper etched hole, and a lower etched hole; The metal mask plate body has an upper etching hole on one side and a lower etching hole on the other side, with the upper etching hole and the lower etching hole corresponding to each other; The two adjacent lower etched holes are interconnected, and the ratio of the distance H2 from the connection point of the two lower etched holes to the upper side of the metal mask plate body to the thickness H1 of the metal mask plate body is between 1 / 4 and 3 / 4.
[0006] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the ratio of H2 to H1 is between 1 / 3 and 3 / 4.
[0007] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the ratio of H2 to H1 is between 1 / 2 and 2 / 3.
[0008] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the above-mentioned upper etched hole is formed on the upper surface of the metal mask plate body by an etching process.
[0009] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the aforementioned lower etched hole is formed on the lower surface of the metal mask plate body by an etching process.
[0010] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the tip width D1 at the connection point of the two lower etched holes is between 1.5-5 μm.
[0011] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the bottom width D2 at the connection point of the two lower etched holes is related to the distance L between the two upper etched holes as D2 = L ± 2 μm.
[0012] In conjunction with the first aspect, the present invention provides a possible implementation of the first aspect, wherein the ratio of the waist width D3 to the bottom width D2 at the connection point of the two lower etched holes is between 1 / 2 and 2 / 3.
[0013] Secondly, embodiments of the present invention provide a method for producing a metal mask for high-pixel OLEDs, comprising the following steps: Steel strip feeding, low-temperature pre-etching to achieve chemical filling; Perform the main etching, followed by multiple acid pickling processes; After pickling, the material is washed with water, then dried and unloaded.
[0014] In conjunction with the second aspect, the present invention provides a possible implementation of the second aspect, wherein, in the main etching stage, the spray pressure on the etching nozzle is set between 0.1-0.15 MPa, the spray pressure on the lower part of the etching nozzle is set between 0.25-0.35 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the chemical solution is set between 1.5-1.55%, and the etching temperature is set between 50±0.5℃.
[0015] In conjunction with the second aspect, the present invention provides a possible implementation of the second aspect, wherein, in the pre-etching stage, the solution temperature is set between 24°C and 31°C, and the solution components include FeCl3, HCl, surfactant and H2O2; During the main etching stage, the solution temperature is set between 40℃ and 60℃, and the solution components include FeCl3, HCl and H2O2.
[0016] Beneficial effects: This invention provides a metal mask for high-pixel OLEDs, comprising a metal mask body, an upper etched hole, and a lower etched hole; the upper etched hole is formed on one side of the metal mask body, and the lower etched hole is formed on the other side, with the upper and lower etched holes corresponding to each other; two adjacent lower etched holes are interconnected, and the ratio of the distance H2 from the connection point of the two lower etched holes to the upper side of the metal mask body to the thickness H1 of the metal mask body is between 1 / 4 and 3 / 4.
[0017] Specifically, during the design and production process, the upper etched holes are etched on the upper side of the metal mask body, and the lower etched holes are etched on the lower side of the metal mask body. The upper and lower etched holes are interconnected to form through holes, and multiple lower etched holes are interconnected, that is, a portion of adjacent lower etched holes are connected together. This reduces the thickness of the middle part of the metal mask body, so that the edge thickness of the metal mask body is the initial thickness. The thickness of the middle part of the metal mask body is reduced, so the material of the metal mask body does not need to reduce the thickness of the board. At the same time, it can increase the cone angle of the through holes on the metal mask body, ensuring that the cone angle is smaller than the evaporation angle in the subsequent OLED production process, thereby improving the screen production yield.
[0018] This invention provides a method for producing a metal mask for high-pixel OLEDs, comprising the following steps: feeding a steel strip, performing low-temperature pre-etching to achieve reagent filling; performing main etching, followed by multiple acid pickling processes; washing with water after acid pickling, and then drying and unloading. This method for producing a metal mask for high-pixel OLEDs has the advantages mentioned above compared to existing technologies, which will not be elaborated further here. Attached Figure Description
[0019] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0020] Figure 1 A cross-sectional view of a metal mask for high-pixel OLED produced using a metal mask manufacturing method for high-pixel OLED, provided for an embodiment of the present invention. Figure 2A cross-sectional view of a metal mask for high-pixel OLEDs produced using existing methods, as provided in an embodiment of the present invention.
[0021] icon: 100 - Metal mask body; 110 - Through hole; 200 - Upper etched hole; 300-Etched hole; 400-cone angle. Detailed Implementation
[0022] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0023] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0025] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0026] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.
[0027] See Figure 1 and Figure 2 As shown, this embodiment provides a metal mask for high-pixel OLEDs, including a metal mask body 100, an upper etched hole 200, and a lower etched hole 300. The upper etched hole 200 is provided on one side of the metal mask body 100, and the lower etched hole 300 is provided on the other side. The upper etched hole 200 and the lower etched hole 300 correspond to each other. Two adjacent lower etched holes 300 are interconnected. The ratio of the distance H2 from the connection point of the two lower etched holes 300 to the upper side of the metal mask body 100 to the thickness H1 of the metal mask body 100 is between 1 / 4 and 3 / 4.
[0028] Specifically, during the design and production process, the upper etched hole 200 is etched on the upper side of the metal mask body 100, and the lower etched hole 300 is etched on the lower side of the metal mask body 100. The upper etched hole 200 and the lower etched hole 300 are interconnected to form a through hole 110, connecting multiple lower etched holes 300 to each other, that is, a portion of adjacent lower etched holes 300 are connected together. This reduces the thickness of the middle part of the metal mask body 100, so that the edge thickness of the metal mask body 100 is the initial thickness, and the thickness of the middle part of the metal mask body 100 is reduced. Therefore, the material of the metal mask body 100 does not need to reduce the thickness of the board. At the same time, it can increase the 4 of the upper through hole 110 of the metal mask body 100, ensuring that the cone angle 400 is smaller than the evaporation angle in the subsequent OLED production process, thereby improving the screen production yield.
[0029] In addition, after the upper etched hole 200 and the lower etched hole 300 are formed on the metal mask plate body 100 through the etching process, a trapezoidal structure will be formed at the connection between two adjacent lower etched holes 300. At this time, the ratio of the distance H2 from the connection point of the two lower etched holes 300 to the upper side of the metal mask plate body 100 to the thickness H1 of the metal mask plate body 100 is between 1 / 4 and 3 / 4.
[0030] The ratio of H2 to H1 can be set to 1 / 4, or 1 / 3, or 1 / 2, or 2 / 3, or 3 / 4.
[0031] The tip width D1 at the connection point of the two lower etched holes 300 can be set to 1.5 μm, or 2 μm, or 2.5 μm, or 3 μm, or 3.5 μm, or 4 μm, or 4.5 μm, or 5 μm.
[0032] The relationship between the bottom width D2 at the connection point of the two lower etched holes 300 and the distance L between the two upper etched holes 200 is D2=L±2um.
[0033] The ratio of the waist width D3 to the bottom width D2 at the connection point of the two lower etched holes 300 can be set to 1 / 2, or the ratio of the waist width D3 to the bottom width D2 at the connection point of the two lower etched holes 300 can be set to 3 / 5, or the ratio of the waist width D3 to the bottom width D2 at the connection point of the two lower etched holes 300 can be set to 2 / 3.
[0034] This embodiment provides a method for producing a metal mask for high-pixel OLEDs, including the following steps: feeding a steel strip, performing low-temperature pre-etching to achieve chemical filling; performing main etching, followed by multiple acid pickling processes; washing with water after acid pickling, and then drying and unloading.
[0035] In the main etching stage, the spray pressure above the etching nozzle is set between 0.1-0.15 MPa, the spray pressure below the etching nozzle is set between 0.25-0.35 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the etching solution is set between 1.5-1.55%, and the etching temperature is set between 50 ± 0.5℃. By fine-tuning the spray pressure and the specific gravity of the etching solution, the etching factor can be adjusted, thereby allowing for the adjustment of the height and width of the island bridges in the 110 through-holes.
[0036] In the pre-etching stage, the solution temperature is set between 24℃ and 31℃, and the solution components include FeCl3, HCl, surfactant and H2O2; the solution temperature can be set to 24℃, or 25℃, or 26℃, or 30℃, or 31℃.
[0037] During the main etching stage, the solution temperature is set between 40℃ and 60℃, and the solution composition includes FeCl3, HCl, and H2O2. The solution temperature can be set to 40℃, 45℃, 50℃, 55℃, or 60℃.
[0038] See Figure 2 As shown, the fine metal mask produced by the metal mask production method for high-pixel OLEDs provided in this embodiment greatly reduces the volume of island bridges, and even eliminates island bridges. During the evaporation process of the fine metal mask, the side of the metal mask body 100 with the upper etching hole 200 is attached to the OLED substrate, and then evaporation is performed. At this time, the cone angle 400 of the metal mask body 100 is smaller than the evaporation angle, which improves the evaporation effect and improves the yield of OLEDs.
[0039] Referring to Tables 1-3, Examples 1-3 are produced using existing technical solutions, while Examples 1-9 are produced using the metal mask production method for high-pixel OLEDs provided in this embodiment. It can be clearly seen that the production method provided in this embodiment can provide a smaller cone angle of 400° to meet the requirement of being smaller than the evaporation angle. Furthermore, the fine metal mask produced using the production method provided in this embodiment can better meet production needs in subsequent production processes, making the D value meet the design production requirements.
[0040] Table 1
[0041] Table 2
[0042] In Example 5 of Table 2, the upper spray pressure of the etching nozzle is set to 0.11 MPa, the lower spray pressure is set to 0.28 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the chemical solution is set to 1.5%, and the etching temperature is set to 50°C. In Example 6, the upper spray pressure of the etching nozzle is set to 0.115 MPa, the lower spray pressure is set to 0.29 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the chemical solution is set to 1.5%, and the etching temperature is set to 50°C. In Example 7, the upper spray pressure of the etching nozzle is set to 0.12 MPa, the lower spray pressure is set to 0.30 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the chemical solution is set to 1.5%, and the etching temperature is set to 50°C. In Example 8, the upper spray pressure of the etching nozzle is set to 0.13 MPa, the lower spray pressure is set to 0.31 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the chemical solution is set to 1.5%, and the etching temperature is set to 50°C.
[0043] In Table 3, SH (height distance from the upper surface of the mask to the junction of the upper and lower etched holes), H (height distance between the junction of the two lower etched holes and the junction of the upper and lower etched holes), and D (horizontal distance between the junction of the two lower etched holes and the junction of the upper and lower etched holes) are all... Figure 1 Chinese identifier.
[0044] Table 3
[0045] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A metal mask for high-pixel OLEDs, characterized in that, include: Metal mask plate body (100), upper etched hole (200) and lower etched hole (300); The metal mask plate body (100) has an upper etching hole (200) on one side and a lower etching hole (300) on the other side, with the upper etching hole (200) and the lower etching hole (300) corresponding to each other; The two adjacent lower etched holes (300) are interconnected, and the ratio of the distance H2 from the connection point of the two lower etched holes (300) to the upper side of the metal mask plate body (100) to the thickness H1 of the metal mask plate body (100) is between 1 / 4 and 3 / 4.
2. The metal mask for high-pixel OLED according to claim 1, characterized in that, The ratio of H2 to H1 is between 1 / 3 and 3 / 4.
3. The metal mask for high-pixel OLED according to claim 1, characterized in that, The upper etched hole (200) is formed on the upper surface of the metal mask plate body (100) by an etching process.
4. The metal mask for high-pixel OLED according to claim 3, characterized in that, The lower etched hole (300) is formed on the lower surface of the metal mask plate body (100) by an etching process.
5. The metal mask for high-pixel OLED according to claim 1, characterized in that, The tip width D1 at the connection point of the two lower etched holes (300) is between 1.5-5 μm.
6. The metal mask for high-pixel OLED according to claim 5, characterized in that, The relationship between the bottom width D2 at the connection point of the two lower etched holes (300) and the distance L between the two upper etched holes (200) is D2=L±2um.
7. The metal mask for high-pixel OLED according to claim 6, characterized in that, The ratio of the waist width D3 to the bottom width D2 at the connection point of the two lower etched holes (300) is between 1 / 2 and 2 / 3.
8. A method for producing a metal mask for high-pixel OLEDs, characterized in that, Includes the following steps: Steel strip feeding, low-temperature pre-etching to achieve chemical filling; Perform the main etching, followed by multiple acid pickling processes; After pickling, the material is washed with water, then dried and unloaded.
9. The method for producing a metal mask for high-pixel OLED according to claim 8, characterized in that, During the main etching stage, the spray pressure on the etching nozzle is set between 0.1-0.15 MPa, the spray pressure on the bottom of the etching nozzle is set between 0.25-0.35 MPa, the etching oscillation frequency is set to 50 r / min, the specific gravity of the reagent is set between 1.5-1.55%, and the etching temperature is set between 50±0.5℃.
10. The method for producing a metal mask for high-pixel OLED according to claim 8, characterized in that, During the pre-etching stage, the solution temperature is set between 24℃ and 31℃, and the solution components include FeCl3, HCl, surfactant and H2O2. During the main etching stage, the solution temperature is set between 40℃ and 60℃, and the solution components include FeCl3, HCl and H2O2.