Graph measurement method and device, semiconductor manufacturing equipment, storage medium and program product

Abstract

The invention relates to a graph measurement method and device, semiconductor manufacturing equipment, a storage medium and a program product. The pattern measuring method comprises the following steps: etching a first photoresist pattern on a first structural layer of a semiconductor silicon wafer to obtain an etched pattern; a second photoresist pattern on a second structural layer of the semiconductor silicon wafer is used as a reference pattern, target parameters of the etched pattern are measured, the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used for adjusting the photoresist pattern etched next time. According to the technical scheme, the related parameters of the etched pattern can be effectively and simply measured, so that the pattern etching error of the semiconductor silicon wafer can be reduced according to the related parameters.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and more specifically, to a pattern measurement method, apparatus, semiconductor manufacturing equipment, storage medium, and program product. Background Technology

[0002] Photolithography is a crucial technology in semiconductor manufacturing, enabling the transfer of patterns from a photomask to the surface of a silicon wafer, forming semiconductor products that meet design requirements.

[0003] In the photolithography process, firstly, through the exposure step, light shines through the light-transmitting area of ​​the photomask onto the silicon wafer coated with photoresist, and undergoes a photochemical reaction with the photoresist. Next, through the development step, the photolithographic pattern is formed by utilizing the degree of solubility of the developer by the photosensitive and unphotosensitive photoresist, thus transferring the photomask pattern. Then, through the etching step, the silicon wafer is etched based on the photolithographic pattern formed by the photoresist layer, further transferring the photomask pattern onto the silicon wafer. Summary of the Invention

[0004] The purpose of this disclosure is to provide a pattern measurement method, apparatus, semiconductor manufacturing equipment, storage medium, and program product that can effectively and simply measure the relevant parameters of the etched pattern, thereby reducing the pattern etching error of the semiconductor silicon wafer based on the relevant parameters.

[0005] To achieve the above objectives, in a first aspect, this disclosure provides a pattern measurement method, comprising: etching a first photoresist pattern on a first structural layer of a semiconductor silicon wafer to obtain an etched pattern; using a second photoresist pattern on a second structural layer of the semiconductor silicon wafer as a reference pattern, measuring target parameters of the etched pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used to adjust the photoresist pattern for the next etching operation.

[0006] Optionally, the etched pattern includes a first pattern and a second pattern, and there is a blank area between the first pattern and the second pattern that does not include the photoresist pattern. The target parameter includes: in a preset direction, the blank distance between the end of the first pattern and the end of the second pattern that does not include the photoresist pattern.

[0007] Optionally, the second photoresist pattern includes a third pattern and a fourth pattern, and there is a blank area between the third pattern and the fourth pattern that does not include the photoresist pattern. The projection pattern of the third pattern onto the first structural layer along a preset projection direction is located at a first preset position of the first pattern before etching, and the projection pattern of the fourth pattern onto the first structural layer along the preset projection direction is located at a second preset position of the second pattern before etching.

[0008] Optionally, the step of using the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern to measure the target parameters of the etched pattern includes: measuring the blank distance (excluding the photoresist pattern) between the third and fourth patterns in the preset direction; measuring the first distance between the end of the first pattern and the third pattern in the preset direction, and measuring the second distance between the end of the second pattern and the fourth pattern; and determining the target parameters based on the blank distance, the first distance, and the second distance.

[0009] Optionally, measuring the first distance between the end of the first pattern and the third pattern includes: obtaining a first size parameter of the first pattern before etching; obtaining a first size change parameter between the first pattern and the first pattern before etching due to etching; and determining the first distance based on the first size parameter, the first preset position, and the first size change parameter.

[0010] Optionally, measuring the second distance between the end of the second pattern and the fourth pattern includes: obtaining the second size parameter of the second pattern before etching; obtaining the second size change parameter between the second pattern and the second pattern before etching due to etching; and determining the second distance based on the second size parameter, the second preset position, and the second size change parameter.

[0011] Optionally, determining the target parameter based on the blank distance, the first distance, and the second distance includes: subtracting the first distance and the second distance from the blank distance to obtain a blank distance in the preset direction that does not include the photoresist pattern between the ends of the first pattern and the ends of the second pattern.

[0012] Optionally, the first photoresist pattern is a photoresist pattern that does not meet the preset measurement conditions, and the second photoresist pattern is a photoresist pattern that meets the preset measurement conditions. The preset measurement conditions are used to define the characteristics of the photoresist pattern and / or the etched pattern that can be measured.

[0013] Secondly, this disclosure provides a pattern measurement device, comprising: an etching module configured to etch a first photoresist pattern on a first structural layer of a semiconductor silicon wafer to obtain an etched pattern; and a measurement module configured to use a second photoresist pattern on a second structural layer of the semiconductor silicon wafer as a reference pattern to measure target parameters of the etched pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used to adjust the photoresist pattern for the next etching operation.

[0014] Thirdly, this disclosure provides a semiconductor manufacturing apparatus, comprising: a memory having a computer program stored thereon; and a processor for executing the computer program in the memory to implement the graphic measurement method as described in the first aspect.

[0015] Fourthly, this disclosure provides a computer-readable storage medium having a computer program stored thereon that, when executed by a processor, implements the graphic measurement method as described in the first aspect.

[0016] Fifthly, this disclosure provides a computer program product, including a computer program that, when executed by a processor, implements the graphic measurement method as described in the first aspect.

[0017] Through the above technical solution, after etching the photoresist pattern, the parameters of the etched pattern are measured using the photoresist patterns of adjacent structural layers. These measured parameters can be used to adjust the photoresist pattern for the next etching operation. The photoresist patterns of adjacent structural layers serve as measurement reference patterns for the etched pattern. Using these reference patterns to measure the parameters of the etched pattern reduces the difficulty of measurement and minimizes situations where measurement is impossible due to the pattern's inconvenience. Therefore, this technical solution enables effective and simple measurement of the relevant parameters of the etched pattern, thereby reducing the pattern etching error of the semiconductor silicon wafer.

[0018] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description

[0019] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a flowchart illustrating a graphical measurement method according to an exemplary embodiment.

[0020] Figure 2A This is an example diagram illustrating a graph conforming to the measurement conditions according to an exemplary embodiment.

[0021] Figure 2B This is an example diagram illustrating a graph that does not meet the measurement conditions, according to an exemplary embodiment.

[0022] Figure 3 This is an example diagram illustrating an etched pattern according to an exemplary embodiment.

[0023] Figure 4 This is an example diagram illustrating a graphical relationship according to an exemplary embodiment.

[0024] Figure 5 This is a schematic diagram illustrating a distance relationship according to an exemplary embodiment.

[0025] Figure 6 This is a structural block diagram of a graphic measurement device according to an exemplary embodiment.

[0026] Figure 7 This is a block diagram illustrating a semiconductor manufacturing apparatus according to an exemplary embodiment. Detailed Implementation

[0027] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.

[0028] In this disclosure, unless otherwise stated, directional terms such as "up," "down," "left," "right," "front," and "back" are used only for the convenience of describing this disclosure and for simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure.

[0029] In semiconductor manufacturing, photolithography is a common process, and within photolithography, there is an etching step. The etching step allows the silicon wafer to be etched based on the photolithographic pattern formed by the photoresist layer, further transferring the mask pattern onto the silicon wafer. Regarding mask patterns, they are patterns designed in advance according to semiconductor products. By transferring the patterns from the mask to the surface of the silicon wafer, semiconductor products that meet the design requirements can be formed.

[0030] Furthermore, in semiconductor manufacturing, as design dimensions continue to shrink, they become close to or smaller than the wavelength of light used in the photolithography process. The diffraction and interference effects of light become increasingly pronounced, causing severe distortion of the actual photolithographic pattern relative to the pattern on the mask. Ultimately, the actual pattern formed on the silicon wafer by photolithography becomes different from the design pattern. This phenomenon is known as the optical proximity effect.

[0031] Therefore, semiconductor manufacturing processes also involve OPC (Optical Proximity Correction) technology. OPC is an etching enhancement technique mainly used in the production process of semiconductor devices to ensure that the edges of the designed patterns are completely etched during production. Thus, the etching step can be achieved using OPC technology.

[0032] In OPC technology, after etching, it is necessary to measure the relevant parameters of the etched pattern in order to collect data based on the measurement results. Then, the etching target, i.e. the pattern to be etched, is calculated based on the collected data to avoid defects on the wafer.

[0033] In related technologies, semiconductor manufacturing is carried out using fab equipment. In semiconductor technology, fab equipment refers to the equipment within a factory that manufactures wafers.

[0034] In the semiconductor industry, Fab is short for wafer fabrication plant, and equipment refers to the various devices used within the Fab for wafer processing and inspection. These devices play a crucial role in the Fab workshop and can be divided into two types: processing equipment and inspection equipment. Processing equipment is responsible for adding, subtracting, and modifying materials on wafers, while inspection equipment is used to detect defects, measure parameters, and test electrical properties.

[0035] Fabric fabrication (Fab) equipment is a core component of the semiconductor manufacturing process, and its operational status and maintenance are crucial for ensuring product quality and output. Furthermore, the operation and maintenance of Fab equipment typically require specialized engineers and technicians who are responsible for daily monitoring, parameter adjustments, and troubleshooting to ensure stable production line operation and product quality compliance.

[0036] Therefore, fab equipment is not only the infrastructure of semiconductor manufacturing, but also a key factor in ensuring product quality and production efficiency.

[0037] In related technologies, fab equipment is typically equipped with measurement conditions. For patterns that meet these conditions, relevant parameters can be measured directly using conventional measurement methods. However, for patterns that do not meet these conditions, conventional measurement methods cannot be used. The inability to perform measurements leads to defects in the wafer.

[0038] Based on this, this disclosure provides a technical solution in which, after etching the photoresist pattern, the parameters of the etched pattern are measured using the photoresist patterns of adjacent structural layers. The measured parameters can be used to adjust the photoresist pattern for the next etching operation. The photoresist patterns of adjacent structural layers can serve as measurement reference patterns for the etched pattern. Using these reference patterns to measure the parameters of the etched pattern reduces the difficulty of measurement and minimizes situations where measurement is impossible due to the pattern's inconvenience. Therefore, this technical solution enables effective and simple measurement of the relevant parameters of the etched pattern, thereby reducing the pattern etching error of the semiconductor silicon wafer.

[0039] It is understood that the technical solutions of this disclosure can be applied to the Fab equipment described in the above embodiments, specifically, to the Fab equipment responsible for inspection. Furthermore, the technical solutions of this disclosure can be part of OPC technology, or in other words, can provide a corresponding foundation for OPC calculations.

[0040] Figure 1 This is a flowchart illustrating a graphical measurement method according to an exemplary embodiment, such as... Figure 1 As shown, this graphic measurement method includes the following steps: Step S11: Etch the first photoresist pattern on the first structural layer of the semiconductor silicon wafer to obtain the etched pattern.

[0041] Step S12: Using the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern, the target parameters of the etched pattern are measured. The first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used to adjust the photoresist pattern for the next etching.

[0042] In step S11, the first structural layer of the semiconductor silicon wafer can be understood as the structural layer that needs to be etched. Therefore, in step S11, the first photoresist pattern is etched to obtain the etched image.

[0043] As described in the foregoing embodiments, a photolithographic pattern needs to be formed before etching. This photolithographic pattern is referred to as a photoresist pattern in this embodiment of the disclosure.

[0044] Regarding the specific etching methods, please refer to the mature OPC technology in this field; details will not be provided here.

[0045] In step S12, the target parameters of the etched pattern need to be measured so that OPC can adjust the photoresist pattern for the next etching operation.

[0046] In some embodiments, if the graphic to be measured meets the measurement conditions of the Fab machine, it can be measured directly using conventional measurement methods. If the graphic to be measured does not meet the measurement conditions of the Fab machine, it can be measured using the measurement methods of the embodiments of this disclosure.

[0047] In some embodiments, regardless of whether the graphic to be measured meets the measurement conditions of the Fab machine, the graphic to be measured can be measured in accordance with the measurement method of the embodiments of this disclosure.

[0048] As an optional implementation, the first photoresist pattern is a photoresist pattern that does not meet the preset measurement conditions, and the second photoresist pattern is a photoresist pattern that meets the preset measurement conditions. The preset measurement conditions are used to define the features of the photoresist pattern and / or the etched pattern that can be measured.

[0049] In this implementation, the first photoresist pattern is defined as not meeting the measurement conditions, while the second photoresist pattern meets the measurement conditions. Thus, the pattern that meets the measurement conditions can be used as a reference pattern, and the pattern that does not meet the measurement conditions can be measured.

[0050] In some embodiments, the features of the photoresist pattern and / or etched pattern that can be measured, such as vertical and horizontal distributions, can be directly determined by observation.

[0051] For example, the target parameter for the line width value of the blank space between line segment ends is measured under the condition that the line segment ends are directly opposite each other.

[0052] Figure 2A This is an example diagram illustrating a graph conforming to the measurement conditions according to an exemplary embodiment, such as... Figure 2A As shown, the target parameter to be measured is the line width between the ends of the line segments. Since the ends of the line segments are directly opposite each other, the measurement conditions are met, and a conventional measurement method can be used. Therefore, Figure 2A The diagram shown can be directly measured.

[0053] Figure 2B This is an example diagram illustrating a graph that does not meet the measurement conditions, according to an exemplary embodiment, such as... Figure 2B As shown, the target parameter to be measured is the line width between the ends of the line segments. Since the ends of the line segments are not directly opposite each other, they do not meet the measurement conditions and cannot be measured using conventional methods. Therefore, Figure 2B The graphic shown can be measured according to the measurement scheme provided in the embodiments of this disclosure.

[0054] The second structural layer can be understood as a new structural design designed to provide a reference graphic for measurement. Furthermore, the first and second structural layers are adjacent to each other to facilitate measurement.

[0055] In some embodiments, the etched pattern includes a first pattern and a second pattern, and there is a blank area between the first pattern and the second pattern that does not include the photoresist pattern. The target parameter includes: in a preset direction, the blank distance between the end of the first pattern and the end of the second pattern that does not include the photoresist pattern.

[0056] In some embodiments, both the first graphic and the second graphic can be etched line segments, the end of the first graphic and the end of the second graphic can be the end of the etched line segments, and the target parameter can be the line width of the blank space between the end of the line segments.

[0057] Regarding the preset direction, the calculation method for the blank distance can be limited. For example, when the line segments are not directly aligned, the preset direction can be horizontal, meaning that the blank line width value needs to be calculated along the horizontal direction.

[0058] Figure 3 This is an example diagram illustrating an etched pattern according to an exemplary embodiment, such as... Figure 3 As shown, in Figure 2B Based on the pre-etching pattern shown, Figure 3 In the process, the ends of the line segments are etched away, resulting in inward shrinkage. The target parameter to be calculated is the line width A of the blank space between the etched ends of the line segments in the horizontal direction.

[0059] In some embodiments, the second photoresist pattern includes a third pattern and a fourth pattern, with a blank area between the third and fourth patterns that does not include the photoresist pattern. The projection pattern of the third pattern onto the first structural layer along a preset projection direction is located at a first preset position of the first pattern before etching, and the projection pattern of the fourth pattern onto the first structural layer along a preset projection direction is located at a second preset position of the second pattern before etching.

[0060] In this implementation, based on the etched pattern including the first pattern and the second pattern, the second photoresist pattern, which serves as a reference pattern, includes the third pattern and the fourth pattern. Furthermore, the third pattern has a corresponding relationship with the first pattern, and the fourth pattern has a corresponding relationship with the second pattern.

[0061] Regarding the preset projection direction, it can be a vertical direction, or a direction perpendicular to a preset distance.

[0062] The first preset position can be the middle position or other positions. The second preset position can be the middle position or other positions.

[0063] In some embodiments, based on the fact that the first and second graphics are graphics with the same shape and size, the first preset position and the second preset position can be the same to improve measurement efficiency.

[0064] In some embodiments, the first preset position and the second preset position are positions relative to the pattern before etching.

[0065] In some embodiments, the second structural layer may be the upper or lower layer of the first structural layer, and no limitation is made here.

[0066] Figure 4 This is an example diagram illustrating a graphical relationship according to an exemplary embodiment. Figure 4 In the middle, the third and fourth graphics have been projected onto the first structural layer along the preset projection direction. Therefore, it can be seen that the first, second, third and fourth graphics are distributed on the same plane.

[0067] In this context, the reference figures refer to the third and fourth figures, and the same applies to subsequent embodiments.

[0068] like Figure 4 As shown, the third image is located in the middle of the first image before etching, and the fourth image is located in the middle of the second image before etching. Furthermore, in Figure 4 The image shows multiple line segments arranged in a non-aligned manner. When designing the third and fourth figures, this arrangement can be followed... Figure 4 The design is based on the graphic form shown.

[0069] In some embodiments, the third and fourth patterns can be patterns that do not require etching or patterns that require etching, but their etching process needs to be performed after the first and second patterns.

[0070] In some embodiments, a new structure can be designed separately. This new structure does not participate in etching but serves only as a structural layer for reference patterns. This implementation method can avoid affecting the etching of other patterns on the semiconductor silicon wafer and achieve better results.

[0071] In some embodiments, using a second photoresist pattern on a second structural layer of a semiconductor silicon wafer as a reference pattern, measuring the target parameters of the etched pattern may include: measuring the blank distance (excluding the photoresist pattern) between a third and a fourth pattern in a preset direction; measuring a first distance between the end of a first pattern and the third pattern in the preset direction, and measuring a second distance between the end of a second pattern and the fourth pattern; and determining the target parameters based on the blank distance, the first distance, and the second distance.

[0072] In some embodiments, since the third and fourth graphics are graphics that meet the measurement conditions, the blank distance between the third and fourth graphics can be directly measured based on the conventional measurement method of the Fab machine.

[0073] In some embodiments, the first distance between the end of the first pattern and the third pattern can be determined by the size parameters of the first pattern before etching and the size parameters changed by etching; and the first distance between the end of the second pattern and the fourth pattern can be determined by the size parameters of the second pattern before etching and the size parameters changed by etching.

[0074] Therefore, measuring the first distance between the end of the first pattern and the third pattern may include: obtaining the first size parameter of the first pattern before etching; obtaining the first size change parameter between the first pattern and the first pattern before etching due to etching; and determining the first distance based on the first size parameter, the first preset position, and the first size change parameter.

[0075] Regarding the first dimension parameter, taking the first graphic as a line segment as an example, the first dimension parameter can be the total length of the line segment. It can be understood that for the first graphic alone, it meets the measurement conditions. Therefore, for the first dimension parameter, the measurement can be directly achieved based on the conventional measurement methods of the Fab machine.

[0076] Regarding the first dimensional change parameter, it can be the dimensional parameter of the etched portion. Continuing with the example of the first pattern as a line segment, the first dimensional change parameter can be the inward distance of the line segment's end, i.e., the length of the etched portion. It can be understood that for a single first pattern, it meets the measurement conditions. Therefore, for the first dimensional change parameter, measurement can be directly achieved based on the conventional measurement methods of the Fab equipment.

[0077] Based on the first size parameter, the first preset position, and the first size variation parameter, the first distance can be determined.

[0078] The first preset position is used to determine the selection ratio of the first size parameter. The first size parameter is multiplied by the selection ratio, and then the first size change parameter is subtracted to obtain the first distance.

[0079] For example, if the first preset position is the middle position of the first pattern before etching, the selected ratio is 1 / 2; if the first preset position is the 1 / 3 position near the end of the first pattern before etching, the selected ratio is 1 / 3, where the end of the first pattern is the end that needs to be etched.

[0080] In some embodiments, measuring the second distance between the end of the second pattern and the fourth pattern includes: obtaining a second size parameter of the second pattern before etching; obtaining a second size change parameter between the second pattern and the second pattern before etching due to etching; and determining the second distance based on the second size parameter, the second preset position, and the second size change parameter.

[0081] Regarding the second dimension parameter, taking the second graphic as a line segment as an example, the second dimension parameter can be the total length of the line segment. It can be understood that for a standalone second graphic, it meets the measurement conditions; therefore, for the second dimension parameter, measurement can be directly achieved based on the conventional measurement methods of the Fab machine.

[0082] Regarding the second dimensional variation parameter, it can be the dimensional parameter of the etched portion. Continuing with the example of the second pattern as a line segment, the second dimensional variation parameter can be the inward distance of the line segment's end, i.e., the length of the etched portion. It can be understood that for a standalone second pattern, it meets the measurement conditions. Therefore, for the second dimensional variation parameter, measurement can be directly achieved based on the conventional measurement methods of the Fab equipment.

[0083] Based on the second size parameter, the second preset position, and the second size change parameter, the distance to the first person can be determined.

[0084] The second preset position is used to determine the selection ratio of the second size parameter. The second size parameter is multiplied by the selection ratio, and then the second size change parameter is subtracted. The result is the second distance.

[0085] For example, if the second preset position is the middle position of the second pattern before etching, the ratio is 1 / 2; if the second preset position is the 1 / 3 position near the end of the second pattern before etching, the ratio is 1 / 3, where the end of the second pattern is the end that needs to be etched.

[0086] In the above embodiments, the conventional measurement methods for Fab equipment can be referred to mature technologies in the field, and will not be described in detail here.

[0087] Furthermore, the target parameters can be determined based on the blank distance, the first distance, and the second distance.

[0088] As an optional implementation, the target parameter is determined based on the blank distance, the first distance, and the second distance, including: subtracting the first distance and the second distance from the blank distance to obtain the blank distance between the ends of the first graphic and the ends of the second graphic in a preset direction, excluding the photoresist graphic.

[0089] Figure 5 This is a schematic diagram illustrating a distance relationship according to an exemplary embodiment, such as... Figure 5As shown, in Figure 4 Based on the graphical relationships shown, A can represent the target parameter, D1 can represent the first distance between the end of the first graphic and the third graphic, D2 can represent the distance between the end of the second graphic and the fourth graphic, C can represent the blank distance between the third graphic and the fourth graphic, L1 can represent the first size parameter, L2 can represent the first size change parameter, L3 can represent the second size parameter, and L4 can represent the second size change parameter.

[0090] Then, we can first measure C and L1~L4 respectively, then determine D1=L1 / 2-L2, and determine D2=L3 / 2-L4. Furthermore, we can determine A=C-D1-D2.

[0091] Therefore, accurate measurement can be achieved for the line width at the ends of non-aligned line segments.

[0092] It is understood that, for different graphics, corresponding reference graphics can be designed based on the principles of the above embodiments, and corresponding parameters can be calculated based on the reference graphics.

[0093] Furthermore, after measuring the target parameters, OPC can perform calculations based on the target parameters to determine the photoresist pattern for the next etching operation.

[0094] For example, if the target parameters determine that the line width at the end of the current line segment is too short, the etched pattern can continue to be etched, and the target of the next etch can include the etched pattern.

[0095] Alternatively, other methods for adjusting the etching target can be adopted, which are not limited here.

[0096] As can be seen from the above embodiments, by designing a reference pattern to assist in the measurement of relevant parameters of the etched pattern, the measurement difficulty of the etched pattern can be reduced, and the situation where measurement is impossible due to the pattern being inconvenient to measure can be minimized. Therefore, effective and simple measurement of relevant parameters of the etched pattern can be achieved, and the pattern etching error of the semiconductor silicon wafer can be reduced based on these parameters.

[0097] Figure 6 This is a structural block diagram of a graphic measurement device 600 according to an exemplary embodiment, such as... Figure 6 As shown, the graphic measurement device 600 includes: Etching module 601 is configured to etch a first photoresist pattern on a first structural layer of a semiconductor silicon wafer to obtain an etched pattern.

[0098] The measurement module 602 is configured to use the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern to measure the target parameters of the etched pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used to adjust the photoresist pattern for the next etching.

[0099] Optionally, the etched pattern includes a first pattern and a second pattern, and there is a blank area between the first pattern and the second pattern that does not include the photoresist pattern. The target parameter includes: in a preset direction, the blank distance between the end of the first pattern and the end of the second pattern that does not include the photoresist pattern.

[0100] Optionally, the second photoresist pattern includes a third pattern and a fourth pattern, and there is a blank area between the third pattern and the fourth pattern that does not include the photoresist pattern. The projection pattern of the third pattern onto the first structural layer along a preset projection direction is located at a first preset position of the first pattern before etching, and the projection pattern of the fourth pattern onto the first structural layer along the preset projection direction is located at a second preset position of the second pattern before etching.

[0101] Optionally, the measurement module 602 is further configured to: measure the blank distance (excluding the photoresist pattern) between the third and fourth patterns in the preset direction; measure a first distance between the end of the first pattern and the third pattern in the preset direction, and measure a second distance between the end of the second pattern and the fourth pattern; and determine the target parameter based on the blank distance, the first distance, and the second distance.

[0102] Optionally, the measurement module 602 is further configured to: obtain a first size parameter of the first pattern before etching; obtain a first size change parameter between the first pattern and the first pattern before etching due to etching; and determine the first distance based on the first size parameter, the first preset position, and the first size change parameter.

[0103] Optionally, the measurement module 602 is further configured to: obtain a second dimension parameter of the second pattern before etching; obtain a second dimension change parameter between the second pattern and the second pattern before etching due to etching; and determine the second distance based on the second dimension parameter, the second preset position, and the second dimension change parameter.

[0104] Optionally, the measurement module 602 is further configured to: subtract the first distance and the second distance from the blank distance to obtain a blank distance excluding the photoresist pattern between the ends of the first pattern and the ends of the second pattern in the preset direction.

[0105] Optionally, the first photoresist pattern is a photoresist pattern that does not meet the preset measurement conditions, and the second photoresist pattern is a photoresist pattern that meets the preset measurement conditions. The preset measurement conditions are used to define the characteristics of the photoresist pattern and / or the etched pattern that can be measured.

[0106] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.

[0107] Figure 7 This is a block diagram illustrating a semiconductor manufacturing apparatus 700 according to an exemplary embodiment. Figure 7 As shown, the semiconductor manufacturing apparatus 700 may include a processor 701 and a memory 702. The semiconductor manufacturing apparatus 700 may also include one or more of a multimedia component 703, an input / output (I / O) interface 704, and a communication component 705.

[0108] The processor 701 controls the overall operation of the semiconductor manufacturing equipment 700 to complete all or part of the steps in the aforementioned graphic measurement method. The memory 702 stores various types of data to support the operation of the semiconductor manufacturing equipment 700. This data may include, for example, instructions for any application or method operating on the semiconductor manufacturing equipment 700, and application-related data such as contact data, sent and received messages, images, audio, video, etc. The memory 702 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. Multimedia component 703 may include a screen and an audio component. The screen may be, for example, a touchscreen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone for receiving external audio signals. The received audio signals may be further stored in memory 702 or transmitted via communication component 705. The audio component also includes at least one speaker for outputting audio signals. I / O interface 704 provides an interface between processor 701 and other interface modules, such as a keyboard, mouse, buttons, etc. These buttons may be virtual or physical buttons. Communication component 705 is used for wired or wireless communication between the semiconductor manufacturing equipment 700 and other devices. Wireless communication may include Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G, or 4G, or a combination of these. Therefore, the corresponding communication component 705 may include a Wi-Fi module, a Bluetooth module, or an NFC module.

[0109] In an exemplary embodiment, the semiconductor manufacturing equipment 700 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the above-described graphic measurement method.

[0110] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, which, when executed by a processor, implement the steps of the graphics measurement method described above. For example, the computer-readable storage medium may be the memory 702 including program instructions described above, which may be executed by the processor 701 of the semiconductor manufacturing apparatus 700 to complete the graphics measurement method described above.

[0111] In another exemplary embodiment, a computer program product is also provided, which includes a computer program executable by a processor, which, when executed by the processor, implements the steps of the above-described graphic measurement method.

[0112] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.

[0113] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.

[0114] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.

Claims

1. A graphic measurement method, characterized in that, include: The first photoresist pattern on the first structural layer of the semiconductor silicon wafer is etched to obtain the etched pattern. Using the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern, the target parameters of the etched pattern are measured. The first structural layer and the second structural layer are adjacent structural layers. The target parameters are used to adjust the photoresist pattern for the next etching.

2. The graphic measurement method according to claim 1, characterized in that, The etched pattern includes a first pattern and a second pattern, and there is a blank area between the first pattern and the second pattern that does not include the photoresist pattern. The target parameter includes: in a preset direction, the blank distance between the end of the first pattern and the end of the second pattern that does not include the photoresist pattern.

3. The graphic measurement method according to claim 2, characterized in that, The second photoresist pattern includes a third pattern and a fourth pattern. There is a blank area between the third pattern and the fourth pattern that does not include the photoresist pattern. The projection pattern of the third pattern onto the first structural layer along a preset projection direction is located at a first preset position of the first pattern before etching. The projection pattern of the fourth pattern onto the first structural layer along the preset projection direction is located at a second preset position of the second pattern before etching.

4. The graphic measurement method according to claim 3, characterized in that, The step of using the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern to measure the target parameters of the etched pattern includes: In the preset direction, the blank distance between the third and fourth patterns, excluding the photoresist pattern, is measured; In the preset direction, a first distance is measured between the end of the first graphic and the third graphic, and a second distance is measured between the end of the second graphic and the fourth graphic; The target parameters are determined based on the blank distance, the first distance, and the second distance.

5. The graphic measurement method according to claim 4, characterized in that, Measuring the first distance between the end of the first graphic and the third graphic includes: Obtain the first dimension parameters of the first pattern before etching; Obtain the first dimensional change parameter caused by etching between the first pattern and the first pattern before etching. The first distance is determined based on the first size parameter, the first preset position, and the first size change parameter.

6. The graphic measurement method according to claim 4 or 5, characterized in that, Measuring the second distance between the end of the second graphic and the fourth graphic includes: Obtain the second dimension parameters of the second pattern before etching; Obtain the second dimensional change parameter caused by etching between the second pattern and the second pattern before etching; The second distance is determined based on the second size parameter, the second preset position, and the second size change parameter.

7. The graphic measurement method according to claim 4, characterized in that, Determining the target parameters based on the blank distance, the first distance, and the second distance includes: Based on the blank distance, subtract the first distance and the second distance to obtain the blank distance between the ends of the first graphic and the ends of the second graphic in the preset direction, excluding the photoresist graphic.

8. The graphic measurement method according to any one of claims 1 to 5, characterized in that, The first photoresist pattern is a photoresist pattern that does not meet the preset measurement conditions, while the second photoresist pattern is a photoresist pattern that meets the preset measurement conditions. The preset measurement conditions are used to define the characteristics of the photoresist pattern and / or the etched pattern that can be measured.

9. A graphic measurement device, characterized in that, include: The etching module is configured to etch a first photoresist pattern on a first structural layer of a semiconductor silicon wafer to obtain an etched pattern. The measurement module is configured to use the second photoresist pattern on the second structural layer of the semiconductor silicon wafer as a reference pattern to measure the target parameters of the etched pattern, wherein the first structural layer and the second structural layer are adjacent structural layers, and the target parameters are used to adjust the photoresist pattern for the next etching.

10. A semiconductor manufacturing apparatus, characterized in that, include: A memory on which computer programs are stored; A processor for executing the computer program in the memory to implement the graphic measurement method according to any one of claims 1 to 8.

11. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the graphic measurement method according to any one of claims 1 to 8.

12. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the graphic measurement method according to any one of claims 1 to 8.

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