Solar cell, photovoltaic module, power generation device and power utilization device

Abstract

The invention provides a solar cell, a photovoltaic module, a power generation device and a power utilization device. The solar cell comprises a first electrode, a hole transport layer, a perovskite light absorption layer and a second electrode which are arranged in a stacked mode, the hole transport layer and the perovskite light absorption layer are arranged between the first electrode and the second electrode in a stacked mode, and the hole transport layer is arranged on the side, away from the second electrode, of the perovskite light absorption layer. The hole transport layer comprises a hole transport material and an organic p-type dopant, and the organic p-type dopant contains trifluoromethyl and also contains one or more of boron element or cyano group. The solar cell of the present application has improved photoelectric properties.

Description

Technical Field

[0001] This application relates to the field of battery technology, and in particular to a solar cell, photovoltaic module, power generation device and power consumption device. Background Technology

[0002] In recent years, global energy shortages and environmental pollution have become increasingly prominent, leading to growing attention on solar cells as an ideal renewable energy source. Solar cells, also known as photovoltaic cells, are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect.

[0003] Perovskite solar cells are solar cells that use perovskite materials as light-absorbing materials. Compared with other solar cells, perovskite solar cells stand out in the field of solar cells due to their advantages such as significantly improved efficiency in a short period of time, low cost, and simple manufacturing process.

[0004] However, the photoelectric performance of perovskite solar cells in related technologies still cannot meet the needs of practical applications and industrial development. Therefore, how to improve the photoelectric performance of perovskite solar cells remains an urgent technical problem to be solved. Summary of the Invention

[0005] This application is made in view of the above-mentioned problems, and its object is to provide a solar cell, a photovoltaic module, a power generation device, and a power consumption device. The solar cell has improved photoelectric performance.

[0006] To achieve the above objectives, a first aspect of this application provides a solar cell comprising a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode stacked together. The hole transport layer and the perovskite light-absorbing layer are stacked between the first and second electrodes, with the hole transport layer disposed on the side of the perovskite light-absorbing layer away from the second electrode. The hole transport layer comprises a hole transport material and an organic p-type dopant. The organic p-type dopant contains a trifluoromethyl group and also contains one or more of boron or cyano groups. The strongly electronegative trifluoromethyl group and one or more of boron or cyano groups in the p-type dopant improve the conductivity of the doped hole transport layer, lowering the HOMO and Fermi levels, thereby achieving better energy level matching with the valence band of the perovskite absorber. Since the p-type dopant can effectively modulate the Fermi level of the hole transport layer, it facilitates the formation of ohmic contacts, thus improving hole extraction. Furthermore, the trifluoromethyl group in the organic p-type dopant increases the fluorine content in the molecule. Increased fluorine content helps to hinder inion migration and improves the stability of the solar cell. Therefore, the solar cell exhibits improved photoelectric performance and stability.

[0007] In some embodiments, the organic p-type dopant includes one or more compounds of formulas (I) to (IV):

[0008]

[0009] In this formula, R is independently selected from hydrogen, fluorine, or trifluoromethyl, provided that at least 6 Rs in each of formulas (I) to (II) are trifluoromethyl, and at least 2 Rs in each of formulas (III) to (IV) are trifluoromethyl; in formula (II), X + This indicates a monovalent cation. The above compounds are beneficial for further improving the photoelectric performance and stability of solar cells.

[0010] In some embodiments, the organic p-type dopant includes one or more of tris[3,5-di(trifluoromethyl)phenyl]borane, tris[3,4,5-tris[trifluoromethyl]phenyl]borane, sodium tetrakis[3,5-di(trifluoromethyl)phenyl]borate, and potassium tetrakis[3,5-di(trifluoromethyl)phenyl]borate. These compounds are beneficial for further improving the photoelectric performance and stability of solar cells.

[0011] In some embodiments, the hole transport material includes one or more of organic hole transport materials or inorganic hole transport materials.

[0012] In some embodiments, the organic hole-transporting material includes triphenylamine compounds. Triphenylamine compounds can effectively transport holes, and these compounds can be processed using solution methods, which facilitates the formation of a uniform film. This, in turn, improves the photoelectric performance of the solar cell.

[0013] In some implementations, the inorganic hole transport material includes metal oxides. This improves the interfacial contact of the solar cell, prevents the formation of interfacial voids, and enhances the stability of the solar cell.

[0014] In some embodiments, the triphenylamine compound includes one or more of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly[bis(4-phenyl)(2,4-dimethylphenyl)amine], poly[bis(4-phenyl)(4-butylphenyl)amine], poly[bis(4-phenyl)(4-fluorophenyl)amine], and poly[bis(4-phenyl)(2,4-difluorophenyl)amine]. This is beneficial for further improving the photoelectric performance and stability of solar cells.

[0015] In some embodiments, the metal oxide includes one or more of nickel oxide, aluminum oxide, tin oxide, antimony-doped tin oxide, and indium tin oxide. This is beneficial for further improving the photoelectric performance and stability of the solar cell.

[0016] In some embodiments, the organic p-type dopant accounts for 2% to 5% of the weight of the hole transport material. This is beneficial for obtaining a stable doping effect.

[0017] In some embodiments, the first electrode is a transparent electrode. This results in a reverse solar cell.

[0018] A second aspect of this application provides a photovoltaic module, which includes the solar cell provided in the first aspect.

[0019] A third aspect of this application provides a power generation device, which includes the solar cell provided in the first aspect.

[0020] The fourth aspect of this application provides an electrical device, which includes the solar cell provided in the first aspect.

[0021] The photovoltaic modules, power generation devices, and power consumption devices of this application include the solar cells provided in this application, and therefore have at least the same advantages as solar cells. Attached Figure Description

[0022] Figure 1 The valence band of perovskite materials, hole transport materials poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and nickel oxide (NiO) are shown. x Energy level diagrams of HOMO and LUMO for some p-type dopants.

[0023] Figure 2 A schematic diagram of the structure of a solar cell according to one embodiment of this application is shown.

[0024] Explanation of reference numerals in the attached figures:

[0025] 10: Solar cell; 12: First electrode; 14: Hole transport layer; 16: Perovskite light-absorbing layer; 18: Electron transport layer; 20: Second electrode. Detailed Implementation

[0026] The following detailed description, with appropriate reference to the accompanying drawings, specifically discloses embodiments of the solar cell, photovoltaic module, power generation device, and power consumption device of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0027] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0028] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0029] Unless otherwise specified, all technical features and optional technical features of this application may be combined to form new technical solutions.

[0030] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0031] In this application, the term "HOMO (Highest Occupied Molecular Orbital) level" refers to the energy level of the highest energy orbital in a molecule that has occupied electrons. The term "LUMO (Lowest Unoccupied Molecular Orbital) level" refers to the energy level of the lowest energy orbital in a molecule that has not occupied electrons. The HOMO and LUMO levels of a compound can typically be determined experimentally using well-known techniques, or they can be calculated theoretically. For example, the HOMO and LUMO levels of a compound can be measured using methods such as cyclic voltammetry, ultraviolet photoelectron spectroscopy (UPS), and Kelvin probe microanalysis.

[0032] The term "organic p-type dopant" refers to an organic dopant that increases the electrical conductivity of a material by increasing the number of holes (positively charged carriers) in the material.

[0033] The term "triphenylamine compounds" refers to organic compounds with a triphenylamine-based structure.

[0034] The term "Fermi level" refers to the highest energy level in the energy band of a solid that is filled with electrons at an absolute zero temperature.

[0035] The term "electrical conductivity" is a measurement that indicates the ability of a material to conduct electric current. Its unit can be Siemens per centimeter (S·cm). -1 ).

[0036] The term "electrode" refers to a region or layer that is composed of or is substantially composed of electrode material.

[0037] As used in this application, the term "layer" refers to any substantially layered structure. A layer may have a thickness that varies over its length. Typically, the thickness of a layer is approximately constant. The "thickness" of a layer as used in this application refers to the average thickness of the layer. The thickness of a layer can be measured using methods conventional in the art. For example, it can be measured using a Zygo NewView 9000 white light interferometer.

[0038] Unless otherwise specified, the term "arranged / set on" means to provide or set one component on another component. The first component may be provided directly on or set on the second component, or a third component may be present between the first and second components. For example, if the first layer is set on the second layer, this includes cases where there is an intermediate third layer between the first and second layers.

[0039] In this application, the term "perovskite material" refers to a material having a three-dimensional crystal structure related to the three-dimensional crystal structure of CaTiO3, or a layered material comprising a structure related to the structure of CaTiO3. When incident light is received, electrons in the perovskite material are excited, and electrons jump from the valence band to the conduction band, generating electron-hole pairs.

[0040] Solar cells, also known as photovoltaic cells, are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. Perovskite solar cells utilize perovskite material as the light-absorbing material. Compared to other solar cells, perovskite solar cells have achieved significant efficiency improvements in a relatively short period, thus attracting considerable attention. Unless otherwise specified, in the following text, "solar cell" refers to a solar cell whose light-absorbing layer contains perovskite material; it can also be called a perovskite solar cell.

[0041] The photoelectric conversion principle of a solar cell is as follows: Incident light (e.g., sunlight) enters the device and reaches the perovskite light-absorbing layer, where it is absorbed. Under the excitation of the incident light, the perovskite light-absorbing layer generates electron-hole pairs. Under the action of an electric field, the holes and electrons separate, with the electrons being transferred to one electrode and the holes being transferred to the other electrode. Subsequently, a loop is formed through an external circuit, which can be used to drive the load.

[0042] The hole transport layer, a crucial component of solar cells, extracts and transports photogenerated holes from the light-absorbing layer to adjacent electrodes, preventing the back-transport of electrons and protecting the light-absorbing layer from moisture and oxygen in the air. Therefore, improving the hole extraction and transport capabilities of the hole transport layer is a key factor in enhancing the efficiency and stability of solar cells. In related technologies, the hole transport layer of solar cells primarily comprises organic hole transport materials, such as poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), or inorganic hole transport materials, such as nickel oxide. These hole transport materials have low conductivity, are difficult to dope, and the Fermi level remains largely unchanged after doping.

[0043] Therefore, there is still a need to provide a technology to improve the hole extraction and hole transport capabilities of the hole transport layer in order to improve the photoelectric performance and stability of perovskite solar cells.

[0044] Based on this, this application provides a solar cell, a photovoltaic module including the solar cell, a power generation device, and a power consumption device. The following provides a more detailed description of this application and its optional embodiments.

[0045] Solar cells

[0046] This application provides a solar cell. The solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode stacked together. The hole transport layer and the perovskite light-absorbing layer are stacked between the first electrode and the second electrode, and the hole transport layer is disposed on the side of the perovskite light-absorbing layer away from the second electrode. The hole transport layer includes a hole transport material and an organic p-type dopant. The organic p-type dopant contains trifluoromethyl groups and also contains one or more of boron or cyano groups.

[0047] In the solar cell of this application, the hole transport layer includes an organic p-type dopant. This organic p-type dopant contains one or more of trifluoromethyl and boron or cyano groups, which can deepen its LUMO level, thereby increasing the difference between the HOMO level of the hole transport material and the LUMO level of the p-type dopant. This enhances the ability of the p-type dopant to trap electrons from the hole transport material, thus forming free holes in the hole transport layer. These holes can move within the hole transport layer, improving the conductivity of the doped hole transport layer and lowering the HOMO and Fermi levels, allowing for better energy level matching with the valence band (VB) of the perovskite absorber layer. The aforementioned p-type dopant can effectively modulate the Fermi level of the hole transport layer. The lower the Fermi level of the hole transport layer, the easier it is to form an ohmic contact with the perovskite absorber layer, which is beneficial for hole extraction. Furthermore, the increased fluorine content facilitates barrier inion migration, thereby improving stability. Therefore, the solar cell of this application has improved photoelectric performance and stability.

[0048] Furthermore, because the aforementioned organic p-type dopants possess deepened LUMO levels, they exhibit excellent doping effects on both organic and inorganic hole transport materials. They are widely applicable to various hole transport materials.

[0049] The presence of p-type dopants in the hole transport layer can be determined using instruments and methods known in the art. For example, nuclear magnetic resonance (NMR) can be used to determine the type and content of dopants in a sample.

[0050] In some embodiments, the organic p-type dopant includes one or more of compounds of formula (I), formula (II), formula (III), or formula (IV):

[0051]

[0052] In formulas (I) to (IV), each R is independently selected from hydrogen, fluorine, or trifluoromethyl, provided that at least 6 Rs in each of formulas (I) to (II) are trifluoromethyl, and at least 2 Rs in each of formulas (III) to (IV) are trifluoromethyl.

[0053] In equation (II), X +This represents a monovalent cation. For example, X... + It can represent a monovalent organic cation or an inorganic cation. For example, X + Including alkali metal cations, such as sodium cations (Na+). + ), potassium cation (K) + (but not limited to this).

[0054] In some embodiments, the organic p-type dopant includes one or more of compounds of formula (I) or formula (II). Compounds of formula (I) and formula (II) are as described above.

[0055] In some embodiments, the organic p-type dopant includes one or more compounds of formula (I). Compounds of formula (I) are as described above.

[0056] The aforementioned compounds, by including an appropriate amount of trifluoromethyl groups, increase the fluorine content in the molecule, thereby deepening the LUMO energy level of the compound. This enhances the conductivity of the doped hole transport layer, resulting in lower HOMO and Fermi levels, which allow for better energy level matching with the valence band of the perovskite absorber layer. This, in turn, is beneficial for further improving the photoelectric performance and stability of solar cells.

[0057] In some embodiments, the p-type dopant includes one or more of tris[3,5-di(trifluoromethyl)phenyl]borane (BTBTF), tris[3,4,5-tris[trifluoromethyl]phenyl]borane (BTTTF), sodium tetrakis[3,5-di(trifluoromethyl)phenyl]borate (STBTF), and potassium tetrakis[3,5-di(trifluoromethyl)phenyl]borate (PTBTF). In some embodiments, the p-type dopant includes one or more of tris[3,5-di(trifluoromethyl)phenyl]borane (BTBTF) or tris[3,4,5-tris[trifluoromethyl]phenyl]borane (BTTTF). The structural formulas of these compounds are shown below.

[0058]

[0059]

[0060] The above-mentioned compounds can be commercially available or prepared using methods described in the prior art. The compounds contain multiple trifluoromethyl groups, increasing the fluorine content in the molecular structure. This deepens the LUMO level of the compounds, thereby improving the conductivity of the doped hole transport layer. The lower HOMO and Fermi levels allow for better energy level matching with the valence band (VB) of the perovskite absorber layer, which is beneficial for further improving the photoelectric performance and stability of solar cells.

[0061] In some embodiments, the hole transport layer includes one or more of organic hole transport materials or inorganic hole transport materials.

[0062] As mentioned above, the hole transport layer functions to extract and transport holes, transferring holes generated by the excitation of the perovskite light-absorbing layer to adjacent electrodes and blocking electron transport. Because the aforementioned organic p-type dopants possess deepened LUMO levels, they exhibit excellent doping effects on both organic and inorganic hole transport materials. They are widely applicable to various hole transport materials. Therefore, this application does not impose any particular limitation on the hole transport material used in the hole transport layer.

[0063] Exemplary examples include, but are not limited to, one or more of the following: triphenylamine compounds, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), 2,2',7,7'-tetratetra(di-p-tolylamino)spiro-9,9'-difluorene (Spiro-TTB), poly(3-hexylthiophene) (P3HT), poly[2 ,3-Benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopentane[2,1-b:3,4-b']dithiophene-2,6-diyl]] (PCPDTBT), poly(N-vinylcarbazole (PVK), HTM-TFSI (1-hexyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide), lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI), spiro-OMETAD +-Bis(trifluoromethanesulfonyl)imine-(spiro(TFSI)2), tert-butylpyridine (tBP), 4,4',4”-tris(methylphenylphenylamino)triphenylamine (m-MTDATA), (N,N,N',N'-tetrayl(4-methoxyphenyl)benzidine) (MeOTPD), 5,5'-di(biphenyl-4-yl)-2,2'-bithiophene (BP2T), N,N'-di-[(1-naphthyl)-N,N'-biphenyl]-1,1'-biphenyl)-4,4'-diamine (Di-NPB), N,N'-di(naphthyl-1-yl)-N,N'-diphenyl-benzidine (α-NPB), 4,4',4”-tris-(N-(naphthyl-2-yl)-N-aniline)triphenylamine (TNATA), 9,9- Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF), N2,N7-di-1-naphthyl-N2,N7-biphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine (spiro-NPB), 4,4-bis-(N,N-diphenylamino)-tetraphenyl (4P-TPD), poly[N,N'-bis(4-butylphenyl)-N,N'-bisphenylbenzidine] (polyTPD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) or poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS), (4-(3,6-dimethyl-9H-carbazole-9-yl)butylphosphonic acid) (Me-4PACz), etc.

[0064] In some embodiments, the organic hole-transporting material includes triphenylamine compounds. Triphenylamine compounds can effectively transport holes, and these compounds can be processed using solution methods, which is beneficial for forming a uniform film layer. This, in turn, is beneficial for improving the photoelectric performance of the solar cell. Optionally, the triphenylamine compounds include one or more of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly[bis(4-phenyl)(2,4-dimethylphenyl)amine] (PTAA-2Me), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD), poly[bis(4-phenyl)(4-fluorophenyl)amine] (PTAA-F), and poly[bis(4-phenyl)(2,4-difluorophenyl)amine] (PTAA-2F). The structural formulas of these compounds are shown below.

[0065]

[0066] For example, inorganic hole transport materials include one or more of metal oxides, cuprous iodide (CuI), cuprous thiocyanate (CuSCN), cuprous bromide (CuBr), or copper indium sulfide (CIS). For example, the metal in the metal oxide may include nickel, aluminum, tin, indium, antimony, vanadium, copper, or molybdenum. The metal oxide may be doped or undoped. When the metal oxide is doped, the dopant element may include, but is not limited to, antimony.

[0067] In some embodiments, the inorganic hole transport material includes metal oxides. This is beneficial for improving the interfacial contact of the solar cell, avoiding the formation of interfacial voids, and thus improving the stability of the solar cell. There is no particular limitation on the metal oxide; any metal oxide that can be commonly used as a hole transport material is acceptable. Optionally, the metal oxide includes one or more of nickel oxide, aluminum oxide, tin oxide, antimony-doped tin oxide, and indium tin oxide. Exemplarily, the metal oxide is in the form of nanoparticles. Exemplarily, the average particle size of the metal oxide nanoparticles is <10 nm.

[0068] In some embodiments, the organic hole transport material includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and the p-type dopant includes one or more of tris[3,4,5-tris(trifluoromethyl)phenyl]borane (BTTTF) or tris[3,5-di(trifluoromethyl)phenyl]borane (BTBTF).

[0069] In some embodiments, the inorganic hole transport material includes nickel oxide (NiO). x (1≤x≤1.5), the organic p-type dopant includes one or more of tris[3,4,5-tris(trifluoromethyl)phenyl]borane (BTTTF) or tris[3,5-di(trifluoromethyl)phenyl]borane (BTBTF). Exemplarily, nickel oxide is in the form of nanoparticles with an average particle size of less than 10 nm.

[0070] For example, in Figure 1 The image shows hole transport materials PTAA and nickel oxide (NiO). x The HOMO energy levels of [a specific type of dopant] and the LUMO energy levels of some organic p-type dopants are shown. (Source: [Insert source here]) Figure 1As can be seen, the organic p-type dopants tris[3,4,5-tris(trifluoromethyl)phenyl]borane (BTTTF) and tris[3,5-di(trifluoromethyl)phenyl]borane (BTBTF) containing trifluoromethyl groups in this application, compared with the organic p-type dopant tris[pentafluorophenyl]borane (BCF) without trifluoromethyl groups in related technologies, have a deeper LUMO energy level. This increases the difference between the HOMO energy level of the hole transport material and the LUMO energy level of the p-type dopant, enhancing the ability of the p-type dopant to trap electrons from the hole transport material, thereby forming holes in the hole transport layer. These holes can move in the hole transport layer, improving the conductivity of the doped hole transport layer, and lowering the HOMO and Fermi levels, allowing for better energy level matching with the valence band of the perovskite absorber layer. The structural formula of the organic p-type dopant tris[pentafluorophenyl]borane (BCF) is shown below.

[0071]

[0072] In some embodiments, the organic p-type dopant accounts for 2% to 5% of the weight of the hole transport material. Exemplarily, the organic p-type dopant accounts for 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5% of the weight of the hole transport material, or any value within a range of two such values. This is beneficial for obtaining a stable doping effect.

[0073] In some implementations, the thickness of the hole transport layer can be from 3 nm to 30 nm. For example, the thickness of the hole transport layer can be 3 nm, 5 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or any value within a range of two such values. This is advantageous for obtaining a uniform and continuous hole transport layer, and also for achieving efficient charge transport.

[0074] In some implementations, the first electrode and the second electrode are used to collect holes and electrons, respectively.

[0075] In some embodiments, one of the first and second electrodes is a transparent electrode. This transparent electrode is the one that first receives the incident light. Exemplarily, the transparent electrode may include a transparent conductive material. This application does not particularly limit the transparent conductive material. Exemplarily, transparent conductive materials include one or more of the following: tin oxide, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), antimony-doped tin oxide, indium-doped tungsten oxide (IWO), indium-doped chromium oxide (ICrO), indium-doped titanium oxide (ITiO), and graphene.

[0076] In some embodiments, the other electrode of the first and second electrodes may include the transparent conductive material described above or other conductive materials. This application does not particularly limit the other conductive materials. For example, other conductive materials include one or more of metals and their alloys, and elemental carbon materials. Exemplarily, metals and their alloys include one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten. Exemplarily, elemental carbon materials include one or more of graphite, graphene, and carbon nanotubes. Exemplarily, organic conductive materials include one or more of poly(3,4-ethylenedioxythiophene), polythiophene, and polyacetylene.

[0077] In some embodiments, the first electrode is a transparent electrode, or also referred to as the front electrode; the second electrode is an electrode formed of other conductive materials as described above, or also referred to as the back electrode. Exemplarily, the thickness of each of the first and second electrodes can be in the range of 50 nm to 200 nm.

[0078] A perovskite light-absorbing layer is disposed between a first electrode and a second electrode, and can generate electron-hole pairs based on the excitation of incident light. This application does not particularly limit the band gap (i.e., the energy difference between the valence band and the conduction band) of the perovskite light-absorbing layer; a band gap conventionally used in the art can be employed. For example, the band gap of the perovskite light-absorbing layer can be in the range of 1.20 eV to 2.30 eV. This application does not particularly limit the band gap measurement method. For example, the band gap measurement method may include: first, obtaining an ultraviolet absorption curve through ultraviolet absorption spectroscopy; and then calculating the band gap of the perovskite light-absorbing layer using the Tauc equation.

[0079] This application does not impose a particular limitation on the thickness of the perovskite light-absorbing layer; a thickness conventionally used in the art for perovskite light-absorbing layers may be adopted. For example, the thickness of the perovskite light-absorbing layer is in the range of 200 nm to 1000 nm. Optionally, the thickness of the perovskite light-absorbing layer is in the range of 400 nm to 800 nm. Optionally, the thickness of the perovskite light-absorbing layer can be 500 nm.

[0080] The perovskite light-absorbing layer comprises a perovskite material. In some embodiments, the perovskite material comprises at least one of the compounds shown in [A][B][X]3 and [A]2[C][D][X]6, wherein A comprises at least one inorganic or organic monovalent cation, B comprises at least one inorganic divalent cation, C comprises at least one inorganic monovalent cation, D comprises at least one inorganic trivalent cation, and X comprises at least one monovalent anion.

[0081] For example, organic monovalent cations include (NR1R2R3R4). + (R1R2N=CR3R4) +(R1R2N-C(R5)=NR3R4) + Or (R1R2N-C(NR5R6)=NR3R4) + One or more of the following, wherein R1, R2, R3, R4, R5, and R6 are each independently selected from H, substituted or unsubstituted C1-C20 alkyl groups, or substituted or unsubstituted aryl groups. Optionally, the organic monovalent cation includes (H2N=CH-NH2). + (abbreviated as FA), CH3NH3 + One or more of (abbreviated as MA).

[0082] For example, the inorganic monovalent cation includes: Li + Na + K + 、Rb + Cs + Cu + Ag + Au + or Hg + At least one of them.

[0083] For example, the inorganic divalent cation includes: Pb 2+ Sn 2+ Be 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Ni 2+ Cd 2+ Cu 2+ Mn 2+ Pd 2+ Yb 2+ Or Eu 2+ At least one of them.

[0084] For example, inorganic trivalent cations include: Bi 3+ Sb 3+ Cr 3+ Fe 3+ Co 3+ Ga 3+ As 3+ Ru 3+ ,Rh 3+ In 3+ Ir 3+ Au 3+ Or Al 3+ At least one of them.

[0085] For example, monovalent anions include: F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - OH - CN - SeCN - At least one of them.

[0086] In some embodiments, the perovskite light-absorbing layer includes the formula Cs (0～0.05) FA (0.8～0.95) MA (0～0.2) Pb (0.5～1.0) Sn (0.0～0.5) Br (0.0～1.0) I (2.0～3.0) The perovskite material shown. Optionally, the perovskite material includes Cs. 0.05 FA 0.95 PbBr 0.15 I 2.85 Cs 0.05 FA 0.95 One or more of PbI3, where FA represents (H2N=CH-NH2). + MA represents CH3NH3 + Optionally, the perovskite light-absorbing layer includes Cs. 0.05 FA 0.95 PbI3.

[0087] In some embodiments, the solar cell further includes an electron transport layer disposed between the perovskite light-absorbing layer and the second electrode.

[0088] The electron transport layer has the function of transporting electrons, which is used to transport electrons generated by the excitation of the perovskite light-absorbing layer to the adjacent electrode and to prevent the transport of holes.

[0089] This application does not impose any particular limitation on the electron transport material used in the electron transport layer; commonly used electron transport materials in the art can be used. For example, electron transport materials include at least one of the following: imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Exemplarily, imide compounds include at least one of the following: phthalimide, succinimide, N-bromosuccinimide, glutarimide, perylene imide (PDI) materials, naphthylimide (NDI) materials, or maleimide. Exemplarily, quinone compounds include at least one of the following: benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Exemplarily, the metal element in the metal oxide includes at least one of the following: Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, or Cr. For example, fullerenes and their derivatives include fullerene C 60 Fullerene C 70 [6,6]-Phenyl C 61 Methyl butyrate (PC) 61 BM), [6,6]-phenyl C 71 Methyl butyrate (PC) 71 BM), Indene-C 60 One or more of the following: diadducts (ICBA), etc. Optionally, the metal oxide includes at least one of tin dioxide (SnO2), titanium dioxide (TiO2), and zinc oxide (ZnO). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes at least one of strontium titanate and calcium titanate. Exemplarily, the fluoride includes at least one of lithium fluoride and calcium fluoride.

[0090] This application does not impose a particular limitation on the thickness of the electron transport layer; any thickness conventionally used in the art can be employed. For example, the thickness of the electron transport layer can be from 5 nm to 100 nm. Optionally, the thickness of the electron transport layer is in the range of 15 nm to 35 nm. Optionally, the thickness of the electron transport layer is 20 nm.

[0091] In some embodiments, the solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a second electrode stacked sequentially, wherein the first electrode is a transparent electrode. This forms a reverse solar cell.

[0092] In some embodiments, the perovskite solar cell further includes a hole-blocking layer disposed between the electron transport layer and the second electrode. The hole-blocking layer improves both electron extraction and hole blocking performance.

[0093] The hole blocking layer includes a hole blocking material. This application does not particularly limit the hole blocking material; exemplarily, the hole blocking material may include SnO2, ZnO, or CeO. x One or more of the following: BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline).

[0094] This application does not impose a particular limitation on the thickness of the hole blocking layer; a thickness conventionally used in the art for hole blocking layers may be adopted. For example, the thickness of the hole blocking layer can be from 0.5 nm to 30 nm. Optionally, the thickness of the hole blocking layer can be from 10 nm to 30 nm. Optionally, the thickness of the hole blocking layer is 20 nm.

[0095] In some embodiments, the perovskite solar cell further includes a passivation layer disposed on at least one surface of the perovskite light-absorbing layer, which helps to reduce defects at the interface and further improve the performance of the solar cell.

[0096] The passivation layer may include passivating agents conventionally used in the art for passivating perovskite light-absorbing layers, such as small organic molecules, organic salts, inorganic salts, and polymers. Small organic molecule passivating agents include, but are not limited to, phenylethylamine, ethylenediamine, pyridine, butanethiol, and 2,5-thiophene dicarboxylic acid. Organic salt passivating materials include, but are not limited to, piperazine iodine, phenylethylamine hydroiodate, dodecyl hydroiodate, guanidine bromide, thiophene ethylamine hydroiodate, ethylenediamine hydroiodate, and oleylamine iodine. Inorganic salt passivating materials include, but are not limited to, zinc chloride, potassium chloride, and gallium chloride. Polymer passivating materials include, but are not limited to, polymethyl methacrylate, polyethylene oxide, polyacrylonitrile, and polyvinyl alcohol.

[0097] Figure 2 A schematic diagram of a solar cell according to an embodiment of this application is shown. In this embodiment, the solar cell 10 includes a first electrode 12, a hole transport layer 14, a perovskite light-absorbing layer 16, an electron transport layer 18, and a second electrode 20 arranged sequentially along the direction of light incidence. The first electrode 12, hole transport layer 14, perovskite light-absorbing layer 16, electron transport layer 18, and second electrode 20 are as described above and will not be repeated here.

[0098] Those skilled in the art will understand that, Figure 2 The diagram only shows, by way of example, that the hole transport layer 14 is disposed on the surface of the perovskite light-absorbing layer 16 facing the first electrode 12, and the electron transport layer 18 is disposed on the surface of the perovskite light-absorbing layer 16 facing the second electrode 20.

[0099] In some embodiments, the perovskite solar cell of this application can be obtained by the preparation method described below. This preparation method includes the following steps:

[0100] Step S1: Provide a transparent conductive glass substrate as the first electrode, and perform pretreatment such as etching, cleaning and drying on the transparent conductive glass substrate for later use;

[0101] Step S2: Prepare a hole transport layer on a pretreated transparent conductive glass substrate;

[0102] Step S3: Prepare a perovskite light-absorbing layer on the hole transport layer;

[0103] Optional step S4: Prepare a passivation layer on the perovskite light-absorbing layer;

[0104] Step S5: Prepare an electron transport layer on the perovskite light-absorbing layer or, if present, on a passivation layer;

[0105] Optional step S6: Fabricating a hole-blocking layer on the electron transport layer; and

[0106] Step S7: Fabricate a metal electrode as a second electrode on the electron transport layer or, if present, on the hole blocking layer to obtain a perovskite solar cell.

[0107] The fabrication methods for the various functional layers of a solar cell, such as the first electrode, hole transport layer, perovskite light-absorbing layer, passivation layer, electron transport layer, hole blocking layer, and second electrode, are not particularly limited and can include fabrication methods commonly used in the art, such as chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, vacuum thermal evaporation, atomic layer deposition, magnetron sputtering, spin coating, slot coating, blade coating, and mechanical pressing.

[0108] In some embodiments, the perovskite solar cell further includes a substrate layer disposed on the side of the first electrode away from the hole transport layer for supporting the perovskite solar cell. The substrate layer can be, but is not limited to, a glass substrate or a flexible substrate. In some embodiments, the material of the flexible substrate layer can include, for example, (but is not limited to) an organic polymer material. Exemplarily, the material of the flexible substrate layer can be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0109] photovoltaic modules

[0110] A second aspect of this application provides a photovoltaic module, including the solar cells provided in the above embodiments. In some embodiments, the photovoltaic module further includes solder strips connecting multiple solar cells, a junction box for current transmission, and a cell encapsulation component.

[0111] In some embodiments, the battery encapsulation component includes photovoltaic glass. The photovoltaic glass covers the aforementioned solar cell, serving to protect it. Simultaneously, the photovoltaic glass possesses excellent light transmittance and high hardness, allowing it to withstand large diurnal temperature variations and harsh weather conditions.

[0112] In some embodiments, the battery encapsulation component includes an ethylene-vinyl acetate copolymer (EVA) film disposed between the photovoltaic glass and the solar cell for bonding the photovoltaic glass and the solar cell.

[0113] In some implementations, the battery encapsulation components include a photovoltaic backsheet. The photovoltaic backsheet serves to protect the solar cells.

[0114] Optionally, the photovoltaic backsheet material may include a polyvinyl fluoride composite film or a thermoplastic elastic material. The photovoltaic backsheet material possesses properties such as insulation, water resistance, and aging resistance.

[0115] In some implementations, the battery encapsulation component includes a solar aluminum frame, made of aluminum alloy, which features high strength and corrosion resistance. It serves to support and protect the solar cells.

[0116] Power generation unit

[0117] A third aspect of this application provides a power generation device, including the solar cell provided in the above embodiments.

[0118] Electrical appliances

[0119] A fourth aspect of this application provides an electrical device including the solar cell provided in the above embodiments.

[0120] In some implementations, the electrical appliances include lighting equipment, energy storage equipment, etc., but are not limited to these. For example, electrical appliances include solar water heaters, solar streetlights, solar photovoltaic generators, etc.

[0121] Example

[0122] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0123] Example 1

[0124] Fabrication of solar cells

[0125] 1. Provide the first electrode

[0126] A 2.0×2.0cm FTO conductive glass substrate (i.e., fluorine-doped SnO2 transparent metal oxide) was taken, and 0.35cm of FTO was removed from each end by laser etching to expose the glass substrate. The substrate was then cleaned sequentially with deionized water, acetone, and isopropanol. After drying the cleaned substrate under a nitrogen gun, it was irradiated in a UV ozone generator for 20 minutes and set aside for later use.

[0127] 2. Preparation of the hole transport layer

[0128] Add 50 μL of 0.2 mg / mL BTBTF (purchased from Shenzhen Atomax Chemical Co., Ltd., www.atomaxchem.com) chlorobenzene solution to 50 μL of PTAA (purchased from Sigma Aldrich) chlorobenzene solution with a concentration of 10 mg / mL to obtain a mixed solution.

[0129] 100 μL of the mixed solution was dropped onto the FTO conductive glass substrate and spin-coated at 6000 rpm for 30 seconds. After annealing at 100°C for 10 minutes, a hole transport layer with a thickness of 10 nm was obtained, wherein the dopant BTBTF accounted for 2 (w / w)% of the weight of the hole transport material PTAA.

[0130] 3. Preparation of the perovskite light-absorbing layer

[0131] Formamidinium hydroiodide (228 mg), lead iodide (645 mg), and cesium iodide (18 mg) were dissolved in a mixed solvent of 760 μL of N,N-dimethylformamide (DMF) and 240 μL of dimethyl sulfoxide (DMSO) and stirred for 8 hours. The solution was then filtered through a 1.0 μm organic filter membrane to obtain the perovskite precursor solution.

[0132] Under a nitrogen atmosphere, 45 μL of perovskite precursor solution was dropwise added to the hole transport layer. The mixture was then spin-coated at 1000 rpm for 5 seconds and then at 4000 rpm for 30 seconds. Ten seconds before the end of the spin-coating process, 100 μL of chlorobenzene antisolvent was dropped. The resulting film was annealed at 100°C for 10 minutes to obtain a 500 nm thick perovskite light-absorbing layer, wherein the perovskite material was Cs. 0.05 FA 0.95 PbI3.

[0133] 4. Fabrication of the electron transport layer

[0134] 100 μL of [6,6]-phenyl C 61 Methyl butyrate (PC) 61 A chlorobenzene solution (20 mg / mL) of BM was dropped onto the perovskite light-absorbing layer, and the layer was spin-coated at 2000 rpm for 30 seconds. After annealing at 70°C for 5 minutes, an electron transport layer with a thickness of 20 nm was obtained.

[0135] 5. Preparation of hole-blocking layer

[0136] A 20 nm thick tin oxide layer was formed on the electron transport layer using atomic layer deposition as a hole blocking layer.

[0137] 6. Preparation of the second electrode

[0138] A copper electrode with a thickness of 100 nm is deposited on the hole blocking layer under high vacuum as a second electrode.

[0139] Thus, perovskite solar cells were obtained.

[0140] Example 2

[0141] The solar cell was prepared using the same method as in Example 1, except that in the preparation of the hole transport layer, the 0.2 mg / mL BTBTF solution was replaced with a 0.2 mg / mL BTTTF (purchased from Shenzhen Aotuo Chemical Co., Ltd., www.atomaxchem.com) chlorobenzene solution.

[0142] Example 3

[0143] The solar cell was prepared using the same method as in Example 1, except that the hole transport layer was prepared by adding 50 μL of nickel oxide (NiO2) to the solar cell. x 50 μL of a 0.2 mg / mL BTBTF solution was added to a solution of nanoparticles (1 ≤ x ≤ 1.5) in a solvent containing a 5:1 volume ratio of water and isopropanol (IPA) (10 mg / mL) to obtain a mixed solution. 100 μL of the mixed solution was dropped onto an FTO conductive glass substrate, spin-coated at 5000 rpm for 30 seconds, and annealed at 150 °C for 10 minutes to obtain a hole transport layer with a thickness of 30 nm.

[0144] Comparative Example 1

[0145] The solar cell was prepared using the same method as in Example 1, except that in the preparation of the hole transport layer, only 50 μL of a 10 mg / mL PTAA chlorobenzene solution was dropped onto the FTO conductive glass substrate to form the hole transport layer, i.e., no p-type dopant was added.

[0146] Comparative Example 2

[0147] The solar cell was prepared using the same method as in Example 1, except that in the preparation of the hole transport layer, the 0.2 mg / mL BTBTF chlorobenzene solution was replaced with a 0.2 mg / mL tri(pentafluorophenyl)borane (BCF, purchased from TCI) chlorobenzene solution.

[0148] Comparative Example 3

[0149] The solar cell was prepared using the same method as in Example 3, except that in the preparation of the hole transport layer, the 0.2 mg / mL BTBTF chlorobenzene solution was replaced with a 0.2 mg / mL tri(pentafluorophenyl)borane (BCF) chlorobenzene solution.

[0150] Comparative Example 4

[0151] The solar cell was prepared using the same method as in Example 1, except that in the preparation of the hole transport layer, the 0.2 mg / mL BTBTF chlorobenzene solution was replaced with a 0.2 mg / mL molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithioene (Mo(tfd-COCF3)3, purchased from Sigma-Aldrich) chlorobenzene solution.

[0152]

[0153] Comparative Example 5

[0154] The solar cell was prepared using the same method as in Example 1, except that in the preparation of the hole transport layer, the 0.2 mg / mL BTBTF chlorobenzene solution was replaced with a 0.2 mg / mL tris[3,5-bis(trifluoromethyl)phenyl]phosphine (PTBTF, purchased from Sigma-Aldrich) chlorobenzene solution.

[0155]

[0156] Hole transport layer performance test

[0157] 1. Conductivity Measurement

[0158] Using a Keithley 2400 source meter, the two ends of the wire were connected to the two ends of the hole transport layer, and a power supply with a known voltage was introduced at both ends of the sample to eliminate the influence of contact resistance and wire resistance. Then the resistance value was read, and the conductivity was calculated as 1 ÷ resistance value.

[0159] 2. Fermi level measurement

[0160] The Fermi level was measured on the surface of the hole transport layer using a Kelvin probe on a Bruker MultiMode 8-HR atomic force microscope in contact mode.

[0161] 3. LUMO level measurement

[0162] Using a Shanghai Chenhua CHI660E series electrochemical workstation, the first pair of redox potentials representing the HOMO and LUMO energy levels of p-type dopants were electrochemically measured. Ferrocene was used as an internal standard, and measurements were performed using cyclic voltammetry with a three-electrode system. Subtracting the oxidation and reduction potentials of ferrocene from the first oxidation potential and the first reduction potential, respectively, and then adding 4.8 eV, yields the corresponding HOMO and LUMO energy levels.

[0163] Solar cell photoelectric performance testing

[0164] The test method for the initial photoelectric conversion efficiency at room temperature (25℃) is as follows.

[0165] According to international standard IEC61215, at 25℃, using a solar simulator from Guangyan, the light intensity of crystalline silicon solar cells was corrected to reach 1 solar intensity (AM 1.5). The solar cells underwent reverse scanning testing using a Keithley 2400 source meter, and the open-circuit voltage V was measured. OC Short-circuit current density J SC And the fill factor FF, and the initial photoelectric conversion efficiency (PCE0) of the solar cell is calculated using the following formula:

[0166]

[0167] Among them, P input This represents the incident light power density.

[0168] Solar cell stability test

[0169] The stability of the tested battery was tested using the aforementioned solar simulator at 50°C. The photoelectric conversion efficiency (PCE) was continuously monitored at the maximum power point (MPPT) and recorded after heating at 50°C for 100 hours. 100 (@50℃).

[0170] Efficiency change rate = (PCE) 100 @50℃÷PCE0)×100%-1.

[0171] The hole transport layer performance and solar cell performance test results of Examples 1-3 and Comparative Examples 1-5 are shown in Table 1 below.

[0172] Table 1

[0173]

[0174]

[0175] Based on the above results, compared to Comparative Example 1, which does not include a p-type dopant in the hole transport layer, Examples 1-2, including the p-type dopant of the present invention, significantly improved the conductivity of the hole transport layer and reduced the Fermi level. Due to the increased conductivity and decreased Fermi level of the hole transport layer in Examples 1-2, the photoelectric performance and stability of the solar cells are improved. Compared to Comparative Example 3, the increased conductivity and decreased Fermi level of the hole transport layer in Example 3 further improve the photoelectric performance and stability of the solar cells. Furthermore, compared to the non-inventive p-type dopant used in Comparative Examples 2, 4, and 5, the Fermi level of the hole transport layer in Examples 1-2 of this disclosure is deeper, which is more conducive to the formation of effective free holes, thereby improving the photoelectric performance and stability of the solar cells. This may be because the p-type dopant of the present invention has stronger electronegativity than the p-type dopant in Comparative Examples 2, 4, and 5.

[0176] Example 4

[0177] Solar cells were prepared using the same method as in Example 1, with the only difference being:

[0178] In the preparation of the hole transport layer, a BTBTF solution with a concentration of 0.5 mg / mL was used instead of the BTBTF solution with a concentration of 0.2 mg / mL in Example 1. The resulting hole transport layer contained BTBTF dopant accounting for 5 (w / w)% of the weight of the hole transport material PTAA.

[0179] The performance of the hole transport layer and the solar cell prepared in Example 4 were tested using the test methods described above.

[0180] The performance test results of the hole transport layer and the solar cell prepared in Examples 1 and 4 above are shown in Table 2 below.

[0181] Table 2

[0182]

[0183] As shown in Table 2, when the p-type dopant accounts for 2% and 5% of the weight of the hole transport material in the hole transport layer, it can increase the conductivity of the hole transport layer, reduce the Fermi level, and obtain excellent photoelectric performance and stability.

[0184] It should be noted that this application is not limited to the above-described embodiments. The above embodiments are merely examples, and any embodiments with the same structure and effect as the technical concept within the scope of this application are included in the technical scope of this application. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways of constructing by combining some of the constituent elements of the embodiments, without departing from the spirit of this application, are also included in the scope of this application.

Claims

1. A solar cell, characterized in that, The solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode stacked together. The hole transport layer and the perovskite light-absorbing layer are stacked between the first electrode and the second electrode, and the hole transport layer is disposed on the side of the perovskite light-absorbing layer away from the second electrode. The hole transport layer comprises a hole transport material and an organic p-type dopant, wherein the organic p-type dopant contains trifluoromethyl and also contains one or more of boron or cyano groups.

2. The solar cell according to claim 1, characterized in that, The organic p-type dopant includes one or more compounds of formulas (I) to (IV): In this formula, R is independently selected from hydrogen, fluorine, or trifluoromethyl, provided that at least 6 Rs in each of formulas (I) to (II) are trifluoromethyl, and at least 2 Rs in each of formulas (III) to (IV) are trifluoromethyl; in formula (II), X + It represents a monovalent cation.

3. The solar cell according to claim 1 or 2, characterized in that, The organic p-type dopant includes one or more of tris[3,5-di(trifluoromethyl)phenyl]borane, tris[3,4,5-tris[trifluoromethyl)phenyl]borane, sodium tetrakis[3,5-di(trifluoromethyl)phenyl]borate, and potassium tetrakis[3,5-di(trifluoromethyl)phenyl]borate.

4. The solar cell according to any one of claims 1 to 3, characterized in that, The hole transport material includes one or more of organic hole transport materials or inorganic hole transport materials.

5. The solar cell according to claim 4, characterized in that, The organic hole transport material includes triphenylamine compounds; and / or, the inorganic hole transport material includes metal oxides.

6. The solar cell according to claim 5, characterized in that, The triphenylamine compounds include one or more of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly[bis(4-phenyl)(2,4-dimethylphenyl)amine], poly[bis(4-phenyl)(4-butylphenyl)amine], poly[bis(4-phenyl)(4-fluorophenyl)amine], and poly[bis(4-phenyl)(2,4-difluorophenyl)amine]; and / or, the metal oxides include one or more of nickel oxide, aluminum oxide, tin oxide, antimony-doped tin oxide, and indium tin oxide.

7. The solar cell according to any one of claims 1 to 6, characterized in that, The organic p-type dopant accounts for 2% to 5% of the weight of the hole transport material.

8. The solar cell according to any one of claims 1 to 7, characterized in that, The first electrode is a transparent electrode.

9. A photovoltaic module, characterized in that, The photovoltaic module includes the solar cell according to any one of claims 1 to 8.

10. A power generation device, characterized in that, The power generation device includes the solar cell according to any one of claims 1 to 8.

11. An electrical appliance, characterized in that, The electrical device includes the solar cell according to any one of claims 1 to 8.

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