Wafer adsorption carrying disc

Abstract

The invention provides a wafer adsorption carrying disc, which comprises a first disc body provided with a first air channel and a second air channel which are mutually independent, and a first air exhaust hole is formed in the radial end part, located in the center of the first disc body, of the first air channel; the second air channel extends in the circumferential direction of the first disc body, a plurality of second air exhaust holes are formed in the second air channel, and the second air channel is located on the outer side of the first air channel in the radial direction; the second disc body is arranged below the first disc body, the second disc body is provided with an air suction channel, the air suction channel is communicated with the multiple second air suction holes, the radial end, located in the center of the second disc body, of the air suction channel is provided with a third air suction hole, and the third air suction hole is communicated with the first air suction hole; and the third air exhaust hole is communicated with an external air exhaust device. The wafer adsorption carrier plate can stably adsorb wafers with warped edges.

Description

Technical Field

[0001] This application relates primarily to the field of semiconductor technology, and in particular to a wafer adsorption carrier. Background Technology

[0002] In semiconductor manufacturing equipment, wafers are typically fixedly mounted on heated trays. These trays not only support the wafers but also heat them. Generally, wafers are fixed using adsorption methods, including vacuum adsorption and electrostatic adsorption. Vacuum adsorption relies on the pressure difference between the front and back sides of the wafer to secure it to the heated tray. Fixing the wafer to the heated tray prevents it from slipping. Furthermore, close contact between the wafer and the heated tray allows for better heat conduction, resulting in better thin film deposition.

[0003] However, wafer edge warping occurs during heating. At low temperatures, edge warping is not severe, allowing the vacuum chuck to hold the wafer even with relatively weak suction. However, at higher process temperatures, such as above 650°C, the edge warping becomes more pronounced, resulting in a larger gap between the wafer edge and the heating tray. This leads to micro-leakage at the wafer edge, allowing process gases to enter the back side of the wafer, causing deposition marks. Furthermore, as film thickness increases, wafer adhesion becomes more difficult. This not only increases the risk of wafer slippage but also affects heat transfer, resulting in poor film quality. Summary of the Invention

[0004] This application addresses the aforementioned technical problems by providing a wafer adsorption carrier that can stably adsorb wafers with edge warping.

[0005] To address the aforementioned technical problems, this application provides a wafer adsorption carrier, comprising: a first carrier body having independent first and second air channels, wherein the first air channel has a first extraction hole at its radial end located at the center of the first carrier body; the second air channel extends circumferentially along the first carrier body and has a plurality of second extraction holes therein, the second air channel being radially located outside the first air channel; and a second carrier body disposed below the first carrier body, wherein the second carrier body has an extraction channel communicating with the plurality of second extraction holes, and the extraction channel has a third extraction hole at its radial end located at the center of the second carrier body, the third extraction hole communicating with the first extraction hole and the third extraction hole communicating with an external extraction device.

[0006] In one embodiment of this application, the air extraction channel includes an annular air extraction channel and a radial air extraction channel, and the plurality of second air extraction holes are connected to the annular air extraction channel.

[0007] In one embodiment of this application, the third air extraction hole is disposed at the radial end of the radial air extraction channel located at the center of the second disc.

[0008] In one embodiment of this application, the first air passage includes an annular groove and a radial groove that are interconnected, and the first air extraction hole is disposed at the radial end of the radial groove located at the center of the first disc.

[0009] In one embodiment of this application, the cross-sectional area of ​​the radial groove gradually decreases from the inside to the outside along the radial direction.

[0010] In one embodiment of this application, the depth of the radial groove gradually decreases from the inside to the outside in the radial direction, and / or the width of the radial groove gradually decreases from the inside to the outside in the radial direction.

[0011] In one embodiment of this application, the width of the annular groove and the radial groove ranges from 2mm to 3mm, and the depth ranges from 1mm to 2mm.

[0012] In one embodiment of this application, the number of annular grooves is 3-5, and the number of radial grooves is 3-18.

[0013] In one embodiment of this application, the radial spacing between adjacent annular grooves is 30mm-60mm.

[0014] In one embodiment of this application, the radial groove includes a first radial groove and a second radial groove, wherein the length of the first radial groove is greater than the length of the second radial groove, the first air extraction hole is disposed at the radial end of the first radial groove located at the center of the first disc, and the second radial groove is connected between at least two of the annular grooves.

[0015] The wafer adsorption carrier of this application has a first air channel and a second air channel that are independent of each other in the first disk body. During vacuum adsorption, gas flows into the first exhaust port through the first air channel. At the same time, the gas also enters the exhaust port of the second disk body through the second exhaust port in the second air channel outside the first air channel, and then flows into the third exhaust port connected to the first exhaust port. This realizes the parallel exhaust of the first air channel in the first disk body and the second air channel in the second disk body, which can increase the instantaneous exhaust flow rate, thereby increasing the wafer edge pressure difference, improving the adsorption force on the warped edge of the wafer, and making the wafer more firmly adsorbed. Attached Figure Description

[0016] The accompanying drawings are included to provide a further understanding of this application; they are incorporated into and constitute a part of this application. The drawings illustrate embodiments of this application and, together with this specification, serve to explain the principles of this application. In the drawings: Figure 1This is a three-dimensional schematic diagram of a wafer adsorption carrier according to an embodiment of this application; Figure 2 yes Figure 1 A front cross-sectional view of the wafer adsorption carrier in the embodiment shown; Figure 3 yes Figure 2 Enlarged schematic diagram of region A in the middle; Figure 4 yes Figure 1 A top view of the wafer adsorption carrier in the embodiment shown; Figure 5 yes Figure 1 A top view of the second disk of the wafer adsorption carrier in the embodiment shown; Figure 6 This is a schematic diagram of the airflow during vacuum adsorption of a wafer adsorption carrier disk according to an embodiment of this application. Figure 7 This is a schematic diagram of the air pressure distribution on the back of the wafer. Detailed Implementation

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this application. For those skilled in the art, these drawings can be applied to other similar scenarios without creative effort. Unless obvious from the context or otherwise specified, the same reference numerals in the drawings represent the same structures or operations.

[0018] As indicated in this application, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0019] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps described in these embodiments do not limit the scope of this application. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following drawings denote similar items; therefore, once an item is defined in one drawing, it need not be further discussed in subsequent drawings.

[0020] In the description of this application, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this application; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0021] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0022] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is merely for the purpose of distinguishing the corresponding components. Unless otherwise stated, these terms have no special meaning and therefore should not be construed as limiting the scope of protection of this application. In addition, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application's specification may have been chosen by the applicant according to his or her judgment, and their detailed meanings are explained in the relevant sections of this description. Moreover, this application should be understood not only through the actual terms used, but also through the meaning implied by each term.

[0023] Wafer warpage is a frequent problem in semiconductor manufacturing. At low-temperature processes, wafer edge warpage is not severe, requiring less suction force; typical vacuum chucks can hold the wafer normally without slippage. However, at higher process temperatures (~650℃), wafer edge warpage becomes significant (>1mm). This is especially true for 3D NAND flash memory chips, where the different expansion coefficients of the implanted materials lead to wafer bending and edge warpage, which increases with the number of layers. During the adsorption of warped wafers, micro-leakage occurs at the wafer edges, resulting in deposition marks on the back side. Furthermore, as film thickness increases, vacuum chucks may become unable to hold the wafer, increasing the risk of slippage and affecting wafer heat transfer, leading to poor film quality.

[0024] Figure 1 This is a three-dimensional schematic diagram of a wafer adsorption carrier according to an embodiment of this application. Figure 2 yes Figure 1 The illustrated embodiment shows a front cross-sectional view of the wafer mounting carrier. Specifically, Figure 2 It is along Figure 1 The cross-sectional view of the CC wire cut shown. Figure 3 yes Figure 2 A magnified view of region A in the middle. Figure 4 yes Figure 1 A top view of the wafer mounting carrier of the illustrated embodiment. (Refer to...) Figures 1-4 As shown, the wafer carrier 100 includes a first disk body 110 and a second disk body 120. The first disk body 110 is used to hold the wafer and has independent first air channels 210 and second air channels 220. The first air channel 210 has a first suction hole 111 at its radial end located at the center of the first disk body; the second air channel 220 extends circumferentially along the first disk body 110 and has multiple second suction holes 112 within it, and is located radially outside the first air channel 210.

[0025] Figure 5 yes Figure 1 A top view schematic diagram of the second disk of the wafer adsorption carrier in the illustrated embodiment. (Combined with...) Figure 2 and Figure 5 As shown, the second disc 120 is located below the first disc 110. The second disc 120 is provided with an air extraction channel 310, which is connected to a plurality of second air extraction holes 112. The radial end of the air extraction channel 310 located at the center of the second disc is provided with a third air extraction hole 122, which is connected to the first air extraction hole 111 and connected to an external air extraction device.

[0026] According to the wafer adsorption carrier 100 of the present application embodiment, a first air channel 210 and a second air channel 220 that are independent of each other are provided in the first carrier body 110. During vacuum adsorption, gas flows into the first exhaust port 111 through the first air channel 210. At the same time, gas also enters the exhaust channel 310 of the second carrier body 120 through the second exhaust port 112 in the second air channel 220 outside the first air channel 210, and then flows into the third exhaust port 122 that is connected to the first exhaust port 111. This realizes the parallel exhaust of the first air channel 210 in the first carrier body 110 and the second air channel 220 in the second carrier body 120, which can increase the instantaneous exhaust flow rate, thereby increasing the wafer edge pressure difference, improving the adsorption force on the warped edge of the wafer, and making the wafer more firmly adsorbed.

[0027] The following uses Figure 6 and Figure 7 This will illustrate the principle of vacuum adsorption using the wafer adsorption carrier disk of this application. Figure 6 This is a schematic diagram of the airflow during vacuum adsorption of a wafer adsorption carrier disk according to an embodiment of this application. (Reference) Figure 6 As shown, a wafer W and a reaction chamber 601 are illustrated. A vacuum pump 630 is connected to a channel 621 inside the support shaft 620 for evacuating gas outward through the channel 621. During vacuum adsorption, the vacuum pump 630 operates, and the gas in the reaction chamber 601 enters the flow channel on the back side of the wafer through the gap between the edge of the back side of the wafer and the wafer adsorption carrier 610, and then enters the channel 621 inside the support shaft 620. The gas flow direction is as follows: Figure 6 As shown by the arrow in the image. Figure 6 Four locations are marked, s1-s4. s1 represents the bottom edge of the wafer's back side. At s1, the wafer warping is greatest. s2 represents the bottom edge of the wafer's back side near the center. At s2, the wafer warping is relatively small, almost nonexistent. The area between s2 and s1 corresponds to the wafer's warped region. s3 represents the center of the wafer's back side, also corresponding to the inlet of channel 621. s4 represents the outlet of channel 621, connected to vacuum pump 630. The gas pressures corresponding to s1-s4 are P1-P4, respectively.

[0028] exist Figure 6In the diagram, the gas pressure at point s1 is P1, which is the pressure inside reaction chamber 601. The gas pressure inside reaction chamber 601 is usually controlled at a stable value. Therefore, P1 can be considered a constant. The gas pressure at the outlet of channel 621 is P4. The outlet of channel 621 is connected to vacuum pump 630. The value of P4 is related to the operating parameters of vacuum pump 630; once the operating parameters are set, P4 can be determined. Therefore, P4 can also be considered a constant. Since both P1 and P4 are constant values ​​with small fluctuations, the pressure loss of the gas from point s1 to point s4 is... Assuming the flow rate is consistent from s1 to s4, the pressure loss mentioned above can be calculated using the following formula. : , in, This is the friction coefficient. Let Q represent the gas density and Q represent the flow rate. It is mainly related to the flow channel structure (i.e., cross-sectional area, length, and shape). In the actual structure, the flow channel shape from s1 to s4 is non-uniform. Dividing the flow channel into three parts, from s1 to s2, the drag coefficient is... From s2 to s3, the drag coefficient is From s3 to s4, the drag coefficient is .but For vacuum adsorption carriers, wafer adhesion relies primarily on the pressure difference between the front and back sides of the wafer. For wafers with high warpage, conventional carrier designs struggle to hold them due to the larger flow channel cross-sectional area near the edge, resulting in lower resistance, pressure loss, and back pressure. This application addresses this by providing a first air channel 210 in the first carrier body 110. At least a portion of the first air channel 210 corresponds to the central region of the wafer, such as s2 to s3. This allows the central region to correspond to a larger flow channel, reducing the resistance coefficient. This reduces the pressure difference, thereby increasing the flow rate Q. Simultaneously, this application also provides multiple second extraction holes 112 in the outer second air passage 220, which can increase the gas flow rate in the wafer edge region (e.g., at s1 to s2), further enhancing the adsorption force on the wafer edge.

[0029] Figure 7 This is a schematic diagram of the gas pressure distribution on the back side of the wafer. The horizontal axis represents the wafer radius R, and the origin O represents the center of the wafer; the vertical axis represents the pressure on the back side of the wafer. P0 represents the pressure on the front side of the wafer, i.e., the gas pressure inside reaction chamber 601. (Reference) Figure 7As shown, curve L0 represents the pressure distribution curve on the back side of the wafer when using a conventional carrier, and curve L1 represents the pressure distribution curve on the back side of the wafer when using the wafer adsorption carrier 100 of this application. The distance from any point on curve L0 to P0 represents the pressure difference ΔP at that point. When the wafer front pressure P0 is the same, when using the wafer adsorption carrier 100 of this application, the pressure on the back side of the wafer near the center is relatively higher, which is reflected in curve L1 being higher than curve L0 in this region, that is, the first pressure difference ΔP1 in this region decreases; the pressure on the back side of the wafer near the edge is relatively lower, that is, the second pressure difference ΔP2 in this region increases. Therefore, compared with a conventional carrier, using the wafer adsorption carrier 100 of this application can reduce the first pressure difference ΔP1, increase the pumping flow rate, and increase the second pressure difference ΔP2, thereby improving the edge adsorption force.

[0030] The wafer adsorption carrier 100 will be described in detail below with reference to the accompanying drawings.

[0031] like Figure 1 As shown, the first air passage 210 and the second air passage 220 are independent of each other in the first disc 110, and the first air passage 210 and the second air passage 220 are not connected to each other. The second air passage 220 is located radially outside the first air passage 210, indicating that the second air passage 220 is closer to the outer edge of the first disc 110. Figure 1 The first disc 110 shown is generally disc-shaped. In some embodiments, the first air passage 210 includes an annular groove 211 and a radial groove 212 that are interconnected, and the first suction hole 111 is disposed at the radial end of the radial groove 212 located at the center of the first disc. In some embodiments, the number of annular grooves 211 is 3-5, and the number of radial grooves 212 is 3-18.

[0032] like Figure 1 and Figure 4 As shown, in this embodiment, the first air passage 210 includes three annular grooves 211 and twelve radial grooves 212. The three annular grooves 211 are concentric circles with the center of the first disc as the center. The twelve radial grooves 212 are evenly distributed circumferentially, that is, the included angle between adjacent radial grooves 212 is 30 degrees.

[0033] refer to Figure 4 In some embodiments, the radial groove 212 includes a first radial groove 2121 and a second radial groove 2122, wherein the length of the first radial groove 2121 is greater than the length of the second radial groove 2122, the first suction hole 111 is disposed at the radial end of the first radial groove 2121 located at the center of the first disc, and the second radial groove 2122 is connected between at least two annular grooves 211. Figure 4 As shown, the 12 radial grooves 212 include 6 first radial grooves 2121 and 6 second radial grooves 2122.

[0034] In some embodiments, the cross-sectional area of ​​the radial groove 212 gradually decreases radially from the inside to the outside. Here, the cross-sectional area refers to the cross-sectional area obtained by cutting the radial groove 212 along the diametrical direction. For example... Figure 4 As shown, taking the first radial groove 2121 as an example, the first radial groove 2121 has a first end 2121a near the center of the first disk body and a second end 2121b away from the center of the first disk body. The cross-sectional area of ​​the first radial groove 2121 gradually decreases from the first end 2121a to the second end 2121b. Gradual decrease includes linear decrease or segmented decrease. Segmented decrease means that the radial groove 2121 can be divided into at least two segments along the radial direction, and the depth or width in each segment is equal.

[0035] According to these embodiments, the radial groove 212 has a larger cross-sectional area near the center of the first disk, which is equivalent to expanding the gas flow channel in the wafer center region. This helps to reduce the first gas pressure difference ΔP1 between the front and back sides of the wafer center region and increase the flow rate. The further away the radial groove 212 is from the center of the first disk, the smaller its cross-sectional area becomes. This means that the flow channel near the wafer edge is reduced, and the flow resistance increases. This helps to increase the second gas pressure difference ΔP2 between the front and back sides of the wafer edge, further enhancing the effect of the second vent hole 112. The combined increase in flow rate leads to an increase in pressure loss in the wafer edge region.

[0036] In some embodiments, the depth of the radial groove 212 gradually decreases radially from the inside to the outside. In some embodiments, the depth of the radial groove 212 near the center of the first disc is 1 mm to 2.5 mm, and the depth away from the center of the second disc is 0.25 mm to 1 mm.

[0037] In some embodiments, the width of the radial groove 212 gradually decreases radially from the inside to the outside.

[0038] In some embodiments, the width and depth of the radial groove 212 gradually decrease radially from the inside to the outside.

[0039] like Figure 4 As shown, the annular groove 211 passes through and connects to at least a portion of the radial groove 212. In some embodiments, the radial spacing between adjacent annular grooves 211 is 30 mm to 60 mm. The spacing between multiple annular grooves 211 is equal.

[0040] like Figure 4In the illustrated embodiment, the first air passage 210 includes both equally spaced annular grooves 211 and radial grooves 212 evenly distributed along the circumference. When the external air extraction device is operating, the airflow can flow evenly on the back side of the wafer, resulting in a uniform gas distribution. This uniform gas distribution on the back side of the wafer helps to ensure a uniform pressure distribution and prevents the wafer from moving due to uneven pressure. Furthermore, the uniform distribution of adsorbed gas on the back side of the wafer also contributes to the uniformity of heat distribution, thereby improving the uniformity of wafer film formation.

[0041] In some embodiments, the width of the plurality of annular grooves 211 decreases sequentially from the inside out. For example, the innermost annular groove 211 has the largest width, the middle annular groove 211 is next, and the outermost annular groove 211 has the smallest width. With this arrangement, the flow rate of the flow channel in the central region of the wafer back side can be further increased, the first gas pressure difference ΔP1 can be reduced, and the second gas pressure difference ΔP2 can be increased. Here, the width of the annular groove 211 refers to the groove width.

[0042] In some embodiments, the width of the annular groove 211 and the radial groove 212 ranges from 2mm to 3mm, and the depth ranges from 1mm to 2mm.

[0043] refer to Figure 4 As shown, the second air passage 220 is located outside the outermost annular groove 211 of the first air passage 210. In this embodiment, the second air passage 220 is a ring concentric with the annular groove 211. (See reference...) Figure 3 As shown, both the first air passage 210 and the second air passage 220 are grooves recessed downwards from the upper surface 113 of the first disc 110. The depth of the groove in the second air passage 220 is less than the thickness of the first disc 110. A second suction hole 112 penetrating the first disc 110 is provided at the bottom of the groove in the second air passage 220. The diameter of the second suction hole 112 is smaller than the width of the second air passage 220.

[0044] In some embodiments, the diameter of the second vent 112 is 0.3mm-0.6mm, and the number of second vent 112 is 120-300. Multiple second vent 112 can be evenly spaced within the second air passage 220, thereby ensuring a uniform distribution of airflow at the wafer edge, guaranteeing that the wafer is stably adsorbed and will not shift due to different pressure differential increments at different locations.

[0045] In some embodiments, the distance between the second air passage 220 and the edge of the first disc 110 is 10%-5% of the radius of the first disc 110, for example, corresponding to Figure 6As shown in the diagram, positions s1 to s2. The location of the second air duct 220 can also be designed according to the degree of warpage of the wafer to be supported. For example, if the warpage region of a wafer typically extends m millimeters inward from the wafer edge, the location of the second air duct 220 can be anywhere within that warpage region, or at a distance of m / 4 to m / 2 from the wafer edge. Figure 1 In the illustrated embodiment, the second gas channel 220 includes one annular groove. In other embodiments, the second gas channel 220 may include multiple annular grooves, all corresponding to the edge region of the wafer.

[0046] like Figure 2 As shown, the first disk 110 and the second disk 120 are stacked vertically. Figure 5 As shown, in some embodiments, the suction duct 310 is a groove provided on the surface of the second disc 120. Since the first disc 110 and the second disc 120 are stacked, the bottom of the first disc 110 presses against the top of the second disc 120, thereby making the suction duct 312 a closed gas flow channel. In other embodiments, the suction duct 310 may also be formed inside the second disc 120.

[0047] refer to Figure 5 In the second disk 120, the suction duct 310 includes an interconnected annular suction duct 311 and radial suction duct 312, with a plurality of second suction holes 112 communicating with the annular suction duct 311. A third suction hole 122 is located at the radial end of the radial suction duct 312 at the center of the second disk. In this embodiment, there is one annular suction duct 311. There are three radial suction ducts 312, evenly distributed along the circumference, meaning the included angle between adjacent radial suction ducts 312 is 120 degrees.

[0048] like Figure 3 As shown, the annular suction channel 311 corresponds to the position of the second air channel 220, thereby communicating with the second suction port 112. In one embodiment, the width of the annular suction channel 311 is greater than the width of the second air channel 220 to reduce frictional resistance and increase the suction volume.

[0049] like Figure 4 and Figure 5 As shown, the first air extraction hole 111 and the third air extraction hole 122 are located at the center of the first disc 110 and the second disc 120, respectively, and the two can be basically aligned to allow gas to flow smoothly.

[0050] like Figure 2As shown, the wafer adsorption carrier 100 also includes a support shaft 140 disposed below the first disk body 110 and the second disk body 120. A channel 141 is provided within the support shaft 140, and the channel 141 is connected to an external air extraction device. A first air extraction port 111 and a third air extraction port 122 are both connected to the channel 141. In one embodiment, both the first air extraction port 111 and the third air extraction port 122 are aligned with the channel 141. According to this embodiment, the channel 141 is disposed inside the support shaft 140, saving space. The first air passage 210 and the second air passage 220 can share a single external air extraction device, eliminating the need for an additional air extraction device and thus avoiding the occupation of extra space.

[0051] refer to Figure 2 As shown, in some embodiments, the wafer mounting tray 100 further includes a base 130 and a heating element 131. The base 130 is disposed below the second tray body 120, and the heating element 131 is disposed between the second tray body 120 and the base 130. According to these embodiments, heat can be generated by the heating element 131, which is then conducted to the wafer to heat it.

[0052] In some embodiments, the heating element 131 is a heating wire. The lower surface of the second disk 120 or the upper surface of the base 130 may be provided with a structure specifically designed to accommodate the heating wire, such as a groove. The heating wire can be uniformly distributed to provide uniformly distributed heat to the wafer.

[0053] In some embodiments, the first plate 110, the second plate 120, and the chassis 130 are all made of high-temperature resistant materials such as ceramic or Hastelloy, and are connected by means of adhesion or welding. The support shaft 140 is connected to the chassis 130 by adhesion or welding. The support shaft 140 has a hollow structure, and exhaust pipes and electrical conduits are arranged inside. The hollow shaft can effectively reduce the heat transfer area, reduce heat loss from the heat plate, and effectively utilize energy.

[0054] This application uses specific terms to describe embodiments of the application. Terms such as "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the application. Therefore, it should be emphasized and noted that references to "an embodiment," "one embodiment," or "an alternative embodiment" in different locations throughout this specification do not necessarily refer to the same embodiment. Furthermore, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0055] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0056] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used to describe embodiments are sometimes modified by the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in this application are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of range in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

Claims

1. A wafer adsorption carrier, characterized in that, include: The first disc body is provided with a first air passage and a second air passage that are independent of each other. The first air passage has a first air extraction hole at the radial end of the center of the first disc body. The second air passage extends circumferentially along the first disc body, and the second air passage is provided with a plurality of second air extraction holes. The second air passage is located radially outside the first air passage. as well as The second disc is disposed below the first disc. The second disc is provided with an air extraction channel, which is connected to the plurality of second air extraction holes. The radial end of the air extraction channel located at the center of the second disc is provided with a third air extraction hole, which is connected to the first air extraction hole and connected to an external air extraction device.

2. The wafer adsorption carrier as described in claim 1, characterized in that, The air extraction channel includes an annular air extraction channel and a radial air extraction channel, and the plurality of second air extraction holes are connected to the annular air extraction channel.

3. The wafer adsorption carrier as described in claim 2, characterized in that, The third air extraction hole is located at the radial end of the radial air extraction channel at the center of the second disk.

4. The wafer adsorption carrier as described in claim 1, characterized in that, The first air passage includes an annular groove and a radial groove that are interconnected, and the first air extraction hole is disposed at the radial end of the radial groove located at the center of the first disc.

5. The wafer adsorption carrier as described in claim 4, characterized in that, The cross-sectional area of ​​the radial groove gradually decreases from the inside to the outside along the radial direction.

6. The wafer adsorption carrier as described in claim 5, characterized in that, The depth of the radial groove gradually decreases from the inside to the outside in the radial direction, and / or the width of the radial groove gradually decreases from the inside to the outside in the radial direction.

7. The wafer adsorption carrier as described in claim 4, characterized in that, The width of the annular groove and the radial groove ranges from 2mm to 3mm, and the depth ranges from 1mm to 2mm.

8. The wafer adsorption carrier as described in claim 4, characterized in that, The number of annular grooves is 3-5, and the number of radial grooves is 3-18.

9. The wafer adsorption carrier as described in claim 4, characterized in that, The radial spacing between adjacent annular grooves is 30mm-60mm.

10. The wafer adsorption carrier as described in claim 4, characterized in that, The radial groove includes a first radial groove and a second radial groove, wherein the length of the first radial groove is greater than the length of the second radial groove, the first air extraction hole is disposed at the radial end of the first radial groove located at the center of the first disc, and the second radial groove is connected between at least two of the annular grooves.

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