Cleaning method of TP Sensor binding area

Abstract

The invention relates to the technical field of a manufacturing process for binding a touch module and an FPC (Flexible Printed Circuit), in particular to a cleaning method for a binding area of a TP sensor, which is suitable for the touch module in which the TP sensor is bound with the TP FPC and / or the FPC in a hot-pressing manner through an ACF (Anisotropic Conductive Film) and a polaroid and an IC (Integrated Circuit) exist in an adjacent area. According to the method, a cleaning window is formed through shielding, a local sealing cavity is established through a sealing cleaning head, and ion neutralization and negative pressure suction linkage dry type removal, micro-droplet impact cleaning and synchronous recovery wet type removal and low-temperature plasma or UV ozone activation are carried out in the cavity. And the pollution index PI is calculated based on the particle counting and the contact angle or surface energy index, and online closed-loop release control is performed in combination with the maximum allowable delay time T, so that the risk of re-pollution and medium overflow is reduced, and the ACF binding consistency and reliability are improved.

Description

[Technical Field] This invention relates to the field of manufacturing process technology for bonding touch modules and FPCs, and particularly to a cleaning method for the bonding area of ​​a TP sensor. [Background Technology] In touch modules, the TP sensor and TP FPC and / or FPC are typically electrically connected by ACF bonding and thermoforming. If particles, fibers, oil, ion residue, or cleaning residue are present on the bonding area surface, it can easily lead to voids, abnormal contact resistance, open circuits, short circuits, and reliability failures.

[0001] Because the bonding area is adjacent to sensitive structures such as polarizers and ICs, conventional open wiping or spraying can easily cause cleaning media to overflow, cause secondary pollution, or have an adverse effect on sensitive structures. [Summary of the Invention] To overcome the above problems, this invention proposes a cleaning method for the TP Sensor binding area that can effectively solve the above problems.

[0002] The present invention provides a technical solution to solve the above-mentioned technical problems: a cleaning method for the bonding area of ​​a TP Sensor, applicable to the manufacturing process of a touch module, wherein the touch module includes a glass substrate, a TPSensor disposed on the glass substrate, a TP FPC and / or FPC electrically connected to the TP Sensor, and an anisotropic conductive film ACF for realizing the electrical connection, and an IC is disposed on the glass substrate adjacent to the bonding area; the method includes: Step S1: Cleaning window formation and sensitive area shielding. A shielding component is set around the bonding area of ​​the TP Sensor to form a cleaning window. The shielding component is used to restrict the cleaning medium from entering the polarizer area and / or IC area. Step S2: A partial sealing cavity is established by fitting the sealing cleaning head to the cleaning window, so that the sealing cleaning head and the surface of the glass substrate form a partial sealing cavity. The sealing cleaning head includes at least a supply channel and a recovery channel, and the recovery channel is connected to a negative pressure source. Step S3, dry removal, involves performing a combined removal process of ion neutralization and negative pressure suction within a locally sealed cavity to remove loose particles and reduce electrostatic re-adsorption. Step S4, wet micro-impact cleaning and synchronous recovery, involves applying micro-droplet impact spray or micro-coating cleaning fluid to the binding area within a locally sealed cavity, and simultaneously with the negative pressure suction to recover the liquid and the contaminant-carrying airflow, followed by blowing or vacuum drying. Step S5, low-temperature activation, involves applying low-temperature plasma treatment or UV ozone treatment to the bonding area to enhance surface energy; Step S6: Online closed-loop determination and time window release. Obtain at least two types of online indicators in the bonding area and calculate the pollution index PI. The online indicators include at least particle count and contact angle or surface energy indicators. Compare the pollution index PI with a threshold. If the threshold is met, allow the process to proceed to ACF attachment and hot-press bonding. Limit the maximum allowable delay time T from the end of step S5 to the start of hot-press bonding. If the threshold is not met or the time T is exceeded, return to step S3 and / or step S4 for reprocessing. Preferably, the shielding assembly includes disposable masking tape and / or a reusable masking frame, wherein the distance between the opening boundary of the masking frame and the outer edge of the bonding area is 0.1 mm to 2.0 mm.

[0003] Preferably, the sealing cleaning head includes an elastic sealing ring and a rigid support ring. The Shore hardness of the elastic sealing ring is 20A to 70A, so as to achieve a stable seal without damaging the surface of the TP Sensor.

[0004] Preferably, the negative pressure range of the negative pressure suction in the dry removal is 5 kPa to 60 kPa, and the duration of simultaneous ion neutralization and suction is 2 s to 30 s.

[0005] Preferably, the wet micro-impact cleaning uses micro-droplet impact with a droplet diameter of 10 micrometers to 200 micrometers and a jet speed of 5 m / s to 80 m / s, with a jet angle of 10 degrees to 80 degrees, and negative pressure recovery is performed simultaneously with the jetting.

[0006] Preferably, the cleaning solution comprises a mixture of deionized water and an alcohol solvent, wherein the alcohol solvent comprises isopropanol and / or ethanol, and the volume fraction of the alcohol solvent is 10% to 90%.

[0007] Preferably, the wet micro-impact cleaning process further includes a directional wiping step, where the wiping material is a lint-free cloth or lint-free cotton swab, and the wiping is performed 1 to 5 times, with the wiping direction being unidirectional or cross-wiping along the long side of the binding area.

[0008] Preferably, the gas used for the low-temperature plasma treatment is air, oxygen, nitrogen, argon, or a mixture thereof, the treatment power is 10W to 300W, and the treatment time is 1s to 30s.

[0009] Preferably, the maximum allowable delay time T is between 1 min and 60 min, and when the online contact angle index is less than or equal to 45 degrees, the allowable delay time T takes a larger value range, and when the contact angle index is close to the upper limit of the threshold, the delay time T takes a smaller value range.

[0010] Preferably, the recovery channel in step S4 is equipped with a liquid-gas separator to recover the cleaning liquid, and the liquid is reused or centrally discharged after the particles are removed by the filtration module.

[0011] Compared with existing technologies, the cleaning method for the TP Sensor binding area of ​​the present invention forms a cleaning window by shielding and establishes a locally sealed cavity. Dry removal by ion neutralization and negative pressure suction, wet removal by micro-impact cleaning and synchronous recovery, and low-temperature activation are carried out in the cavity. The method also introduces closed-loop control of the contamination index PI and the maximum allowable delay time T, which can effectively reduce the risk of cleaning media spillage and recontamination, improve the surface energy consistency and ACF adhesion stability of the binding area, reduce the occurrence rate of voids and abnormal contact resistance, and improve batch stability and traceability through online criteria and time window interlocking. [Attached Image Description] Figure 1 This is a flowchart of the cleaning method for the TP Sensor binding area of ​​the present invention; Figure 2 This is a cross-sectional schematic diagram of the touch module bonding area in the cleaning method of the TP Sensor bonding area of ​​the present invention.

Detailed Implementation Methods

[0012] It should be noted that in the embodiments of the present invention, all directional indications (such as up, down, left, right, front, back, etc.) are limited to relative positions on the specified view, rather than absolute positions.

[0013] Furthermore, in this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0014] Please see Figure 1 and Figure 2 The cleaning method for the TP Sensor bonding area of ​​the present invention is applicable to the manufacturing process of touch module. The touch module includes a glass substrate 1, a TP Sensor 2 disposed on the glass substrate 1, a TP FPC 5 and / or FPC 7 electrically connected to the TP Sensor 2, an anisotropic conductive film ACF 8 for realizing electrical connection, and an IC 6 disposed on the glass substrate 1 adjacent to the bonding area 4.

[0015] The cleaning method for the TP Sensor binding area of ​​the present invention includes the following steps: Step S1: Cleaning window formation and sensitive area shielding. A shielding component is set around the binding area of ​​the TP Sensor to form a cleaning window. The shielding component is used to restrict the cleaning medium from entering the polarizer 3 area and / or the IC area.

[0016] Step S2: A partial sealed cavity is established by fitting the sealing cleaning head against the cleaning window, so that the sealing cleaning head and the surface of the glass substrate form a partial sealed cavity. The sealing cleaning head includes at least a supply channel and a recovery channel, and the recovery channel is connected to a negative pressure source.

[0017] Step S3, dry removal, involves performing a combined removal process of ion neutralization and negative pressure suction within a locally sealed cavity to remove loose particles and reduce electrostatic re-adsorption.

[0018] Step S4, wet micro-impact cleaning and synchronous recovery, involves applying micro-droplet impact spray or micro-coating cleaning fluid to the binding area within a locally sealed cavity, and simultaneously with the negative pressure suction to recover the liquid and contaminant-carrying airflow, followed by blowing or vacuum drying.

[0019] Step S5, low-temperature activation, involves applying low-temperature plasma treatment or UV ozone treatment to the bonding area to enhance surface energy.

[0020] Step S6: Online closed-loop determination and time window release. Obtain at least two types of online indicators in the bonding area and calculate the pollution index PI. The online indicators include at least particle count and contact angle or surface energy indicators. Compare the pollution index PI with a threshold. If the threshold is met, allow the process to proceed to ACF attachment and hot-press bonding. Limit the maximum allowable delay time T from the end of step S5 to the start of hot-press bonding. If the threshold is not met or the time T is exceeded, return to step S3 and / or step S4 for reprocessing.

[0021] The shielding assembly includes disposable masking tape and / or a reusable masking frame, wherein the distance between the opening boundary of the masking frame and the outer edge of the bonding area is 0.1 mm to 2.0 mm.

[0022] The sealing cleaning head includes an elastic sealing ring and a rigid support ring. The elastic sealing ring has a Shore hardness of 20A to 70A to achieve a stable seal without damaging the surface of the TP Sensor.

[0023] The negative pressure range of the negative pressure suction in the dry removal process is 5 kPa to 60 kPa, and the duration of simultaneous ion neutralization and suction is 2 s to 30 s.

[0024] The wet micro-impact cleaning uses micro-droplet impact with a droplet diameter of 10 micrometers to 200 micrometers and a jet speed of 5 m / s to 80 m / s, with a jet angle of 10 degrees to 80 degrees, and performs negative pressure recovery during jetting.

[0025] The cleaning solution comprises a mixture of deionized water and an alcohol solvent, wherein the alcohol solvent includes isopropanol and / or ethanol, and the volume fraction of the alcohol solvent is 10% to 90%.

[0026] After wet micro-impact cleaning, there is also a directional wiping step. The wiping material is a lint-free cloth or lint-free cotton swab. The number of wipings is 1 to 5 times, and the wiping direction is unidirectional or cross-wiping along the long side of the binding area.

[0027] The gas used for low-temperature plasma treatment is air, oxygen, nitrogen, argon, or a mixture thereof, with a treatment power of 10W to 300W and a treatment time of 1s to 30s.

[0028] The maximum allowable delay time T is between 1 minute and 60 minutes. When the online contact angle index is less than or equal to 45 degrees, the allowable delay time T takes the larger range. When the contact angle index is close to the upper limit of the threshold, the delay time T takes the smaller range.

[0029] The pollution index PI is determined as follows: PI = a·Np + b·θ + c·Nd Where Np is the number of particles with a diameter greater than or equal to 5 micrometers, θ is the water contact angle, Nd is the visual defect count, and a, b, and c are weighting coefficients; when PI is less than or equal to a preset threshold, it is considered qualified.

[0030] Online particle counting is acquired using dark-field vision, scattered light, or surface scanning methods, with the full or sampled field of view of the bound area used as the judgment range.

[0031] The recovery channel in step S4 is equipped with a liquid-gas separator to recover the cleaning fluid, and the fluid is reused or centrally discharged after particles are removed by a filtration module.

[0032] The method continuously completes steps S1 to S6 on the same alignment platform, and directly enters ACF attachment and hot-press bonding on the alignment platform, thereby reducing recontamination caused by workpiece handling.

[0033] The present invention also provides a cleaning apparatus for the TP sensor binding area for implementing the method, comprising: Alignment and positioning platform; Shielding components are used to form a cleaning window; A sealing cleaning head is used to form a locally sealed cavity and includes a supply channel and a recovery channel; Ion neutralization module and negative pressure suction module; Micro-injection or micro-liquid supply module with optional wiping actuator; A low-temperature activation module, comprising a plasma generator and / or a UV ozone generator; The online detection module is used to obtain particle count and contact angle or surface energy indicators; The controller is used to calculate the pollution index PI, perform closed-loop judgment, and perform process interlock control on the maximum allowable delay time T.

[0034] The sealing cleaning head also includes a differential pressure sensor or a flow sensor. The controller performs closed-loop regulation of the negative pressure suction based on the sensor output to stabilize the differential pressure range of the local sealing cavity.

[0035] The online detection module includes a contact angle detection unit, which outputs the contact angle using micro-dispensing and imaging measurement methods.

[0036] A method for manufacturing a touch module includes cleaning and activating the bonding area of ​​a TP Sensor using the method, and then completing ACF attachment and thermoforming bonding within the maximum allowable delay time T, so that the TP Sensor forms an electrical connection with the TP FPC and / or FPC.

[0037] Compared with existing technologies, the cleaning method for the TP Sensor binding area of ​​the present invention forms a cleaning window by shielding and establishes a locally sealed cavity. Dry removal by ion neutralization and negative pressure suction, wet removal by micro-impact cleaning and synchronous recovery, and low-temperature activation are carried out in the cavity. The method also introduces closed-loop control of the contamination index PI and the maximum allowable delay time T, which can effectively reduce the risk of cleaning media spillage and recontamination, improve the surface energy consistency and ACF adhesion stability of the binding area, reduce the occurrence rate of voids and abnormal contact resistance, and improve batch stability and traceability through online criteria and time window interlocking.

[0038] The above description is only a preferred embodiment of the present invention and does not limit the patent scope of the present invention. Any modifications, equivalent substitutions and improvements made within the concept of the present invention should be included within the patent protection scope of the present invention.

Claims

1. A cleaning method for the bonding area of ​​a TP Sensor, applicable to the manufacturing process of a touch module, the touch module comprising a glass substrate, a TP Sensor disposed on the glass substrate, a TP FPC and / or FPC electrically connected to the TP Sensor, an anisotropic conductive film ACF for realizing the electrical connection, and an IC disposed on the glass substrate adjacent to the bonding area, characterized in that, The method includes: Step S1: Cleaning window formation and sensitive area shielding. A shielding component is set around the bonding area of ​​the TP Sensor to form a cleaning window. The shielding component is used to restrict the cleaning medium from entering the polarizer area and / or IC area. Step S2: A partial sealing cavity is established by fitting the sealing cleaning head to the cleaning window, so that the sealing cleaning head and the surface of the glass substrate form a partial sealing cavity. The sealing cleaning head includes at least a supply channel and a recovery channel, and the recovery channel is connected to a negative pressure source. Step S3, dry removal, involves performing a combined removal process of ion neutralization and negative pressure suction within a locally sealed cavity to remove loose particles and reduce electrostatic re-adsorption. Step S4, wet micro-impact cleaning and synchronous recovery, involves applying micro-droplet impact spray or micro-coating cleaning fluid to the binding area within a locally sealed cavity, and simultaneously with the negative pressure suction to recover the liquid and the contaminant-carrying airflow, followed by blowing or vacuum drying. Step S5, low-temperature activation, involves applying low-temperature plasma treatment or UV ozone treatment to the bonding area to enhance surface energy; Step S6: Online closed-loop determination and time window release. Obtain at least two types of online indicators in the bonding area and calculate the pollution index PI. The online indicators include at least particle count and contact angle or surface energy indicators. Compare the pollution index PI with a threshold. If the threshold is met, allow the process to proceed to ACF attachment and hot-press bonding. Limit the maximum allowable delay time T from the end of step S5 to the start of hot-press bonding. If the threshold is not met or the time T is exceeded, return to step S3 and / or step S4 for reprocessing.

2. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The shielding assembly includes disposable masking tape and / or a reusable masking frame, wherein the distance between the opening boundary of the masking frame and the outer edge of the bonding area is 0.1 mm to 2.0 mm.

3. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The sealing cleaning head includes an elastic sealing ring and a rigid support ring. The elastic sealing ring has a Shore hardness of 20A to 70A to achieve a stable seal without damaging the surface of the TP Sensor.

4. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The negative pressure range of the negative pressure suction in the dry removal process is 5 kPa to 60 kPa, and the duration of simultaneous ion neutralization and suction is 2 s to 30 s.

5. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The wet micro-impact cleaning uses micro-droplet impact with a droplet diameter of 10 micrometers to 200 micrometers and a jet speed of 5 m / s to 80 m / s, with a jet angle of 10 degrees to 80 degrees, and performs negative pressure recovery during jetting.

6. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The cleaning solution comprises a mixture of deionized water and an alcohol solvent, wherein the alcohol solvent includes isopropanol and / or ethanol, and the volume fraction of the alcohol solvent is 10% to 90%.

7. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The wet micro-impact cleaning process is followed by a directional wiping step. The wiping material is a lint-free cloth or lint-free cotton swab. The wiping is performed 1 to 5 times, and the wiping direction is unidirectional or cross-wiping along the long side of the binding area.

8. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The gas used for the low-temperature plasma treatment is air, oxygen, nitrogen, argon, or a mixture thereof, with a treatment power of 10W to 300W and a treatment time of 1s to 30s.

9. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The maximum allowable delay time T is from 1 min to 60 min. When the online contact angle index is less than or equal to 45 degrees, the allowable delay time T takes a larger value range. When the contact angle index is close to the upper limit of the threshold, the delay time T takes a smaller value range.

10. The cleaning method for the TP Sensor bonding area as described in claim 1, characterized in that, The recovery channel in step S4 is equipped with a liquid-gas separator to recover the cleaning liquid, and the liquid is reused or centrally discharged after the particles are removed by the filtration module.

Images