Wafer surface low-damage efficient repairing method based on grinding wheel optimization
By optimizing the grinding wheel combination and process parameters on a multi-axis grinding equipment, and combining porous negative pressure adsorption, reverse differential cutting, and online detection, the problems of low efficiency and deep damage in wafer re-scratching repair have been solved, achieving a high-efficiency, low-damage wafer repair effect suitable for industrial mass production.
Patent Information
- Application Number
- CN202610381717.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-26
- Publication Date
- 2026-05-12
AI Technical Summary
Existing technologies for wafer re-scratching repair suffer from low processing efficiency, deep damage layers, and incomplete repair. In particular, traditional biaxial grinding processes, when dealing with re-scratching, result in deep damage layers during coarse grinding and low efficiency during fine grinding, leading to low overall processing efficiency and increased material removal and costs in downstream polishing processes.
By employing multi-axis grinding equipment and optimizing different combinations of grit sizes for coarse and fine grinding wheels and process parameters, combined with a porous uniform negative pressure adsorption design, a nested limiting structure of rotating ring and positioning groove, a reverse differential cutting design, a series arrangement of multi-mesh grinding wheels, and online detection technology, we can achieve efficient and low-damage repair of heavy scratches on wafer surfaces.
It significantly improves the processing efficiency and yield of wafer repair, reduces the depth of the subsurface damage layer, reduces wafer surface scratches and thermal deformation, and achieves seamless process connection and real-time quality control, adapting to the needs of industrial mass production.