High-entropy nitride film with amorphous-nanocrystalline composite structure and preparation method of high-entropy nitride film

Abstract

The invention provides an amorphous-nanocrystalline composite structure high-entropy nitride film and a preparation method thereof, and relates to the technical field of film materials. A multi-arc ion plating technology and a high-power pulse magnetron sputtering technology are adopted, and the (Ti / TiN...) / (nc-HEAN / a-Si3N4) multi-layer nano composite structure high-entropy film is prepared by regulating and controlling the composition proportion and the structure. The nano-multilayer structure has the advantages that the crack deflects at an interface, the tip of the crack at the interface is passivated, and microcrack initiation and propagation caused by stress concentration are prevented. The nanocrystalline nc-HEAN high-entropy nitride is embedded in the amorphous a-Si3N4, so that a nanocrystalline / amorphous multiphase composite structure is formed. By means of a nano multilayer structure and a nanocrystalline / amorphous multiphase composite structure, the multilayer nano composite high-entropy nitride film with high hardness / high toughness is prepared so as to meet the high-performance application requirements of the modern industrial technology on cutters and grinding tools.

Description

Technical Field

[0001] This invention relates to the field of thin film materials technology, specifically to an amorphous-nanocrystalline composite high-entropy nitride thin film and its preparation method. Background Technology

[0002] Surface protection technology for cutting tools and molds is developing rapidly with industrial upgrading and the advancement of materials science. It is required to far exceed ordinary products in terms of performance, lifespan, precision and applicability. Advanced surface technology can not only significantly extend the life of cutting tools and molds and improve machining accuracy, but also break through the limitations of traditional materials and adapt to extreme application scenarios.

[0003] Binary and ternary transition metal nitrides (TMNs) have good mechanical properties, thermal stability and excellent chemical inertness, and are widely used in the field of hard coating protection for cutting tools and grinding wheels. However, they have problems such as insufficient hardness and toughness and low film-substrate adhesion, and are gradually unable to meet the increasingly complex working conditions.

[0004] Compared to traditional nitride films, high-entropy nitride films exhibit improvements in hardness, high elastic modulus, and wear resistance. Patents CN202210305161.6 and CN202410451301.X report a TiAlMoNbW high-entropy alloy nitride film and its preparation process, and a TiAlNbTaW high-entropy alloy nitride film and its preparation method and application, respectively. Both patents utilize magnetron sputtering technology to prepare high-entropy nitride films, resulting in simple film structures and concise preparation methods. However, the hardness of these films ranges from 20 GPa to 30 GPa, slightly higher than traditional binary and ternary nitrides, making it difficult to meet the demands of high-end industrial applications. Patent application CN2024101112557.8 reports a hard high-entropy alloy nitride thin film material and its preparation method. The high-entropy nitride thin film prepared by this patent has a hardness as high as 48 GPa, but the toughness of the film is not reported, and the paper does not describe the methods to improve the toughness and adhesion of the film. The review paper (LiWei, Liu Ping, Liaw Peter K, Microstructures and properties of high-entropyalloy films and coatings: a review [J], Materials Research Letters, 2018, 6:199-229) reports nitride thin films with hardness ranging from 10 GPa to 66 GPa. The mechanical properties of nitride thin films are affected by elemental composition and content, film structure and preparation process, etc. The toughness of ultra-high hardness films is an important factor affecting their film-substrate bonding and tribological properties.

[0005] Therefore, developing a high-entropy nitride film that combines high hardness and high toughness, and expanding its industrial applications, has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] Therefore, this invention provides an amorphous-nanocrystalline composite high-entropy nitride thin film and its preparation method. By achieving the integrated characteristics of strength and toughness through the amorphous-nanocrystalline composite structure, the hardness and toughness of the high-entropy nitride thin film can be significantly improved, and the wear rate can be reduced, so as to meet the high-performance application requirements of cutting tools and grinding wheels in modern industrial technology.

[0007] To achieve the above objectives, the present invention provides the following technical solution: In a first aspect, the present invention provides an amorphous-nanocrystalline composite high-entropy nitride thin film, comprising a soft-hard alternating transition layer and an ultra-hard high-entropy nitride layer, wherein the soft-hard alternating transition layer is coated on the surface of a metal substrate, the ultra-hard high-entropy nitride layer is coated on the surface of the soft-hard alternating transition layer, the soft-hard alternating transition layer comprises N first layers and N second layers, the N first layers and the N second layers are alternately stacked, the N first layers are close to the metal substrate, and the N second layers are far from the metal substrate.

[0008] Furthermore, the metal matrix is ​​WC-Co cemented carbide, titanium alloy, or high-speed steel.

[0009] Furthermore, the raw materials for the alternating hard and soft transition layer include Ti and TiN.

[0010] Furthermore, the first layer is a Ti layer.

[0011] Furthermore, the second layer is a TiN layer.

[0012] Furthermore, the composition of the ultrahard high-entropy nitride layer is nc-(AlTiCrVTa)N / a-Si3N4.

[0013] Furthermore, the raw materials of the ultrahard high-entropy nitride layer include: metallic elements and non-metallic elements, wherein the metallic elements include Al, Ti, Cr, V, and Ta, and the non-metallic elements include Si and N.

[0014] Furthermore, the atomic percentages of the metal elements Al:Ti:Cr:V:Ta are 1:1:1:1:1.

[0015] Furthermore, the non-metallic elements include Si and N, and the doping amount of Si accounts for 5 to 10 at of the total content of the high-entropy nitride film.

[0016] Furthermore, the thickness of each layer of the alternating soft and hard transition layer is 5~10 nm, and the total thickness of the alternating soft and hard transition layer is 200~500 nm.

[0017] Furthermore, the thickness of the ultrahard high-entropy nitride layer is 800~1500 nm.

[0018] Furthermore, the thickness of the amorphous-nanocrystalline composite high-entropy nitride film is 1000~2000 nm.

[0019] Secondly, the present invention provides a method for preparing the aforementioned amorphous-nanocrystalline composite high-entropy nitride thin film, comprising the following steps: Step (1) Chemically clean the surface of the metal substrate to remove surface contaminants; Step (2) The metal substrate is placed in a vacuum chamber and subjected to plasma sputtering treatment; Step (3) uses arc ion plating technology to prepare a soft-hard alternating transition layer on the surface of the metal substrate; Step (4) uses high-power pulsed magnetron sputtering technology to prepare ultrahard high-entropy nitrides on the surface of the soft-hard alternating transition layer.

[0020] Further, in step (1), the chemical cleaning of the metal substrate surface to remove surface contaminants includes: placing the metal substrate in acetone and alcohol solutions in sequence, cleaning it with ultrasonic waves for 5-10 minutes respectively, and then drying it with dry nitrogen gas.

[0021] Further, in step (2), the plasma sputtering process includes: introducing argon gas and using plasma glow discharge sputtering to treat the metal substrate for 15-20 min.

[0022] Further, in step (3), the preparation of an alternating hard and soft transition layer on the surface of the metal substrate using arc ion plating technology includes: Step (30) uses arc ion plating to prepare the Ti layer. The process conditions are as follows: argon is used as the working gas, the argon pressure is 0.3~0.6 Pa, the DC bias voltage of the substrate is -50~-100 V, the Ti target current is 60~80 A, and the thickness of the Ti layer is controlled to be 5~10 nm. Step (31) uses arc ion plating to prepare a TiN layer. The process conditions are as follows: nitrogen and argon are introduced, the flow rate ratio of nitrogen to argon is 1:4, the DC bias voltage of the substrate is -50~-150V, the purity of the Ti target is ≥99.9%, the Ti target current is 70~90 A, and the thickness of the TiN layer is controlled to be 5~10 nm. Step (32) is performed alternately with steps (30) and (31) until the thickness of the prepared Ti / TiN soft-hard alternating transition layer is 200~500 nm.

[0023] Further, in step (4), the process conditions for the high-power pulsed magnetron sputtering are as follows: argon is used as the working gas, the argon pressure is 0.5~1.0 Pa, the DC bias voltage of the substrate is -50~-150V, AlTiCrVTa high-entropy alloy target and Si target are used, the purity of AlTiCrVTa high-entropy alloy target is ≥99.5% and the power is 1.5~2.0 kW, the purity of Si target is ≥99.9% and the power is 0.2~0.5 kW, and the thickness of the high-entropy nitride layer is controlled to be 800~1500 nm.

[0024] Furthermore, steps (2), (3), and (4) are performed consecutively within the same equipment cavity.

[0025] Furthermore, the AlTiCrVTa high-entropy alloy target and the Si target are installed at the cathode position of the high-power target material.

[0026] Furthermore, the Ti target is installed at the cathode position of the arc ion plating.

[0027] The technical solution of this invention has the following advantages: 1. This invention employs multi-arc ion plating and high-power pulsed magnetron sputtering technologies to prepare (Ti / TiN…) / (nc-HEAN / a-Si3N4) multilayer nanocomposite high-entropy thin films through component ratio and structural control. The nanomultilayer structure offers advantages such as crack deflection at the interface, crack tip passivation at the interface, and prevention of microcrack initiation and propagation caused by stress concentration. The nanocrystalline / amorphous multiphase composite structure consists of nanocrystalline nc-HEAN high-entropy nitride embedded in amorphous a-Si3N4. By optimizing grain size, nanocrystalline and amorphous content, a combination of high hardness and high toughness can be achieved. Utilizing the nanomultilayer structure and the nanocrystalline / amorphous multiphase composite structure, multilayer nanocomposite high-entropy nitride thin films with both high hardness and high toughness are prepared to meet the high-performance application requirements of modern industrial technologies for cutting tools and grinding wheels.

[0028] 2. The amorphous-nanocrystalline composite high-entropy nitride film prepared by this invention has a multilayer nanocomposite structure, with a hardness of 41~46 GPa and a fracture toughness of 2.1~2.5 MPa•m. 1 / 2 Low wear rate (≤2.0×10⁻⁶) -16 m 3 / N•m).

[0029] 3. This invention continuously completes arc ion plating and high-power pulsed magnetron sputtering within the same equipment cavity. Multi-arc ion plating can improve the film-substrate bonding strength, while high-power pulsed magnetron sputtering can form an amorphous-nanocrystalline composite high-entropy nitride layer. The method is simple and can be precisely controlled. Attached Figure Description

[0030] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0031] Figure 1 The loading-unloading curves of the amorphous-nanocrystalline composite high-entropy nitride thin film prepared in Example 1 of this invention during nanoindentation hardness testing are shown. Figure 2 The scratch morphology is shown in Example 1 of this invention. Figure 3 This is a curve showing the friction coefficient of the amorphous-nanocrystalline composite high-entropy nitride film prepared in Example 1 of the present invention as a function of sliding distance; Figure 4 The loading-unloading curves of the amorphous-nanocrystalline composite high-entropy nitride thin film prepared in Example 2 of this invention during nanoindentation hardness testing are shown. Figure 5 The scratch morphology is shown in Example 2 of this invention. Figure 6 This is a curve showing the friction coefficient of the amorphous-nanocrystalline composite high-entropy nitride film prepared in Example 2 of the present invention as a function of sliding distance. Detailed Implementation

[0032] The following embodiments are provided to better understand the present invention and are not limited to the preferred embodiments described. They do not constitute a limitation on the content and scope of protection of the present invention. Any product that is the same as or similar to the present invention, derived by any person under the guidance of the present invention or by combining the features of the present invention with other prior art, falls within the protection scope of the present invention.

[0033] Where specific experimental steps or conditions are not specified in the embodiments, they can be performed according to the conventional experimental steps or conditions described in the literature in this field. All raw materials or instruments used are commercially available conventional products, including but not limited to those used in the embodiments of this application.

[0034] Example 1 This embodiment provides a method for preparing amorphous-nanocrystalline composite high-entropy nitride thin films, the steps of which are as follows: Step (1) Place the high-speed steel substrate in acetone and alcohol in sequence, clean it with ultrasonic waves for 5 min each, and then dry it with nitrogen gas.

[0035] Step (2) Hang the cleaned high-speed steel substrate on the workpiece rack in the coating equipment chamber. See the coating equipment for details. Figure 2 The AlTiCrVTa high-entropy alloy target and the Si target are respectively installed at the cathode position of the high-power target material, and the Ti target is installed at the cathode position of the arc ion plating. A vacuum of better than 3 × 10⁻⁶ is achieved using mechanical pumps and molecular pumps. -3 At Pa, argon gas was introduced, and the high-speed steel substrate was cleaned for 15 min using a plasma source.

[0036] Step (3) uses arc ion plating technology to prepare a Ti / TiN alternating hard and soft transition layer on the surface of a high-speed steel substrate; Step (30) The Ti layer is prepared by arc ion plating technology, with argon as the working gas, the argon pressure being 0.3 Pa, the DC bias voltage of the substrate being -50 V, the Ti target current being 60 A, and the thickness of the Ti layer being 5 nm. Step (31) The TiN layer is prepared by arc ion plating technology, with argon and nitrogen as working gases, the nitrogen to argon flow ratio is 1:4, the gas pressure is 0.3 Pa, the substrate DC bias voltage is -50V, the Ti target current is 60 A, and the TiN layer thickness is 5 nm. Step (32) is to repeat steps (30) and (31) alternately until the thickness of the Ti / TiN hard-soft alternating layer reaches 200 nm.

[0037] Step (4) uses high-power pulsed magnetron sputtering technology to prepare an nc-(AlTiCrVTa)N / a-Si3N4 ultrahard high-entropy nitride layer on the surface of the Ti / TiN soft-hard alternating transition layer. The argon gas pressure is 0.3 Pa, the AlTiCrVTa target power is 1.5 kW, the Si target power is 0.2 kW, and the thickness of the nc-(AlTiCrVTa)N / a-Si3N4 ultrahard high-entropy nitride layer is controlled to be 800 nm.

[0038] After preparation, the coating equipment is turned off, the chamber temperature is reduced to below 50°C, and the high-speed steel substrate coated with an amorphous-nanocrystalline composite high-entropy nitride film is removed.

[0039] Example 2 This embodiment provides a method for preparing amorphous-nanocrystalline composite high-entropy nitride thin films, the steps of which are as follows: Step (1) Place the high-speed steel substrate in acetone and alcohol in sequence, clean it with ultrasonic waves for 10 min each, and then dry it with nitrogen gas.

[0040] Step (2) Hang the cleaned high-speed steel substrate on the workpiece rack in the coating equipment chamber. See the coating equipment for details. Figure 2 The AlTiCrVTa high-entropy alloy target and the Si target are respectively installed at the cathode position of the high-power target material, and the Ti target is installed at the cathode position of the arc ion plating. A vacuum of better than 3 × 10⁻⁶ is achieved using mechanical pumps and molecular pumps. -3 At Pa, argon gas was introduced, and the high-speed steel substrate was cleaned for 20 min using a plasma source.

[0041] Step (3) uses arc ion plating technology to prepare a Ti / TiN alternating hard and soft transition layer on the surface of a high-speed steel substrate; Step (30) The Ti layer is prepared by arc ion plating technology, with argon as the working gas, the argon pressure is 0.56 Pa, the DC bias voltage of the substrate is -150 V, the Ti target current is 80 A, and the thickness of the Ti layer is 10 nm. Step (31) The TiN layer is prepared by arc ion plating technology, with argon and nitrogen as working gases, the nitrogen to argon flow ratio is 1:4, the gas pressure is 0.6 Pa, the substrate DC bias voltage is -150V, the Ti target current is 80 A, and the TiN layer thickness is 10nm. Step (32) is to repeat steps (30) and (31) alternately until the thickness of the Ti / TiN hard-soft alternating layer reaches 500 nm.

[0042] Step (4) uses high-power pulsed magnetron sputtering technology to prepare an nc-(AlTiCrVTa)N / a-Si3N4 ultrahard high-entropy nitride layer on the surface of the Ti / TiN soft-hard alternating transition layer. The argon gas pressure is 0.6 Pa, the AlTiCrVTa target power is 2.0 kW, the Si target power is 0.5 kW, and the thickness of the nc-(AlTiCrVTa)N / a-Si3N4 ultrahard high-entropy nitride layer is controlled to be 1500 nm.

[0043] After preparation, the coating equipment is turned off, the chamber temperature is reduced to below 50°C, and the high-speed steel substrate coated with an amorphous-nanocrystalline composite high-entropy nitride film is removed.

[0044] Test case The mechanical and tribological properties (hardness, elastic modulus, elastic recovery coefficient, adhesion, friction coefficient, and wear rate) of the amorphous-nanocrystalline composite high-entropy nitride films prepared in Examples 1 and 2 of this invention were tested. The test results are shown in Table 1.

[0045] Hardness and elastic modulus testing Mechanical and tribological properties were tested using a CSM NHT S / N060146 nanoindenter. The results were obtained using the formula R=(d max -d res ) / d max Calculate the elastic recovery coefficient, where d max and d res Table 1 shows the displacement at maximum loading and the residual deformation at maximum unloading, respectively. The calculation results of the elastic recovery coefficient R are shown in Table 1.

[0046] Please see Figure 1 , Figure 4 The loading-unloading curves of the amorphous-nanocrystalline composite high-entropy nitride films prepared in Examples 1 and 2 of this invention during nanoindentation hardness testing are shown below. Figure 1 , 4 As shown.

[0047] Adhesion test Adhesion was tested using a CSM NHT S / N060146 nano-scratch tester.

[0048] Please see Figure 2 , Figure 5 The scratch morphologies of the amorphous-nanocrystalline composite high-entropy nitride films prepared in Examples 1 and 2 of this invention are as follows: Figure 2 , 5 As shown.

[0049] Fracture toughness test Indentations were prepared on the surface of an amorphous-nanocrystalline composite high-entropy nitride film using a microhardness tester, and the fracture toughness was calculated based on the relationship between the fracture toughness KIC and the radial cracks around the indentation (Formula 1), where P is the indentation load. a E and H are empirical constants related to the geometry of the indenter, respectively, representing the elastic modulus and hardness of the film.

[0050]

[0051] Tribological properties and wear rate testing Tribological properties were tested using an Anton Paar ball-and-plate friction tester. The test conditions were room temperature, a load of 5 N, and a rotational speed of 500 r / m. The friction pair consisted of 9Cr18 steel balls (diameter D 8 mm). After the tribological properties were tested, the wear cross-section of the thin film was analyzed using a surface profilometer manufactured by Taylor Hobson, and the wear rate was calculated according to formula (2).

[0052]

[0053] In the formula: WR Wear rate, in meters (m) 3 / N•m; P is the normal load in N; d is the sliding distance in m; A is the cross-sectional area of ​​the wear track in m2.

[0054] Please see Figure 3 , Figure 6 The friction coefficient curves of the amorphous-nanocrystalline composite high-entropy nitride films prepared in Examples 1 and 2 of this invention as a function of sliding distance are shown in the figures below. Figure 3 , 6 As shown.

[0055] The hardness, elastic modulus, elastic recovery coefficient, adhesion, friction coefficient, and wear rate of the amorphous-nanocrystalline composite high-entropy nitride films prepared in Examples 1 and 2 of this invention were tested. The test results are shown in Table 1.

[0056] Table 1 Mechanical and tribological properties of amorphous-nanocrystalline composite high-entropy nitride films

[0057] The loading-unloading curves of the amorphous-nanocrystalline composite high-entropy nitride films prepared in Examples 1 and 2 of this invention during nanoindentation hardness testing are shown below. Figure 1 , 4 As shown, the scratch morphologies are as follows: Figure 2 , 5 As shown, the curves of friction coefficient versus sliding distance are respectively as follows: Figure 3 , 6 As shown. The amorphous-nanocrystalline composite high-entropy nitride film prepared in the embodiments of the present invention has a hardness of 41~46 GPa and a fracture toughness of 2.1~2.5 MPa•m. 1 / 2 Low wear rate (≤2.0×10⁻⁶) -16 m 3 / N•m).

[0058] In summary, this invention employs multi-arc ion plating and high-power pulsed magnetron sputtering technologies to prepare high-entropy thin films with a (Ti / TiN…) / (nc-HEAN / a-Si3N4) multilayer nanocomposite structure through component ratio and structural control. The nanomultilayer structure offers advantages such as crack deflection at the interface, crack tip passivation at the interface, and prevention of microcrack initiation and propagation caused by stress concentration. Nanocrystalline nc-HEAN high-entropy nitrides are embedded in amorphous a-Si3N4, forming a nanocrystalline / amorphous multiphase composite structure. By optimizing grain size, nanocrystalline and amorphous content, a combination of high hardness and high toughness can be achieved. Utilizing the nanomultilayer structure and the nanocrystalline / amorphous multiphase composite structure, a multilayer nanocomposite high-entropy nitride thin film with both high hardness and high toughness is prepared, meeting the high-performance application requirements of modern industrial technologies for cutting tools and grinding wheels. This invention continuously completes arc ion plating and high-power pulsed magnetron sputtering within the same equipment cavity. Multi-arc ion plating can improve the film-substrate bonding strength, and high-power pulsed magnetron sputtering can form amorphous-nanocrystalline composite high-entropy nitride layers. The method is simple and can be precisely controlled.

[0059] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A high-entropy nitride thin film with an amorphous-nanocrystalline composite structure, characterized in that, include: Alternating soft-hard transition layers and ultra-hard high-entropy nitride layers, among which... The alternating hard and soft transition layer is coated on the surface of the metal substrate, and the ultra-hard high-entropy nitride layer is coated on the surface of the alternating hard and soft transition layer. The alternating soft and hard transition layer includes N first layers and N second layers, which are stacked alternately. The N first layers are close to the metal substrate, and the N second layers are far from the metal substrate.

2. The amorphous-nanocrystalline composite high-entropy nitride thin film according to claim 1, characterized in that, The raw materials for the alternating hard and soft transition layer include Ti and TiN, with the first layer being a Ti layer and the second layer being a TiN layer.

3. The amorphous-nanocrystalline composite high-entropy nitride thin film according to claim 1, characterized in that, The composition of the ultrahard high-entropy nitride layer is nc-(AlTiCrVTa)N / a-Si3N4, and its raw materials include metallic and non-metallic elements. The metallic elements include Al, Ti, Cr, V, and Ta, and the atomic percentage of the metallic elements Al:Ti:Cr:V:Ta is 1:1:1:1:

1. The non-metallic elements include Si and N, and the doping amount of Si accounts for 5~10 at of the total content of the high-entropy nitride film.

4. The amorphous-nanocrystalline composite high-entropy nitride thin film according to claim 1, characterized in that, The thickness of each layer of the alternating soft and hard transition layer is 5~10 nm, the total thickness of the alternating soft and hard transition layer is 200~500 nm, the thickness of the ultrahard high-entropy nitride layer is 800~1500 nm, and the thickness of the amorphous-nanocrystalline composite high-entropy nitride film is 1000~2000 nm.

5. The amorphous-nanocrystalline composite high-entropy nitride thin film according to claim 1, characterized in that, The metal matrix is ​​WC-Co cemented carbide, titanium alloy, or high-speed steel.

6. The method for preparing amorphous-nanocrystalline composite high-entropy nitride thin films according to any one of claims 1 to 5, characterized in that, Includes the following steps: Step (1) Chemically clean the surface of the metal substrate to remove surface contaminants; Step (2) The metal substrate is placed in a vacuum chamber and subjected to plasma sputtering treatment; Step (3) uses arc ion plating technology to prepare a soft-hard alternating transition layer on the surface of the metal substrate; Step (4) uses high-power pulsed magnetron sputtering technology to prepare an ultra-hard high-entropy nitride layer on the surface of the soft-hard alternating transition layer.

7. The preparation method according to claim 6, characterized in that, In step (1), the chemical cleaning of the metal substrate surface to remove surface contaminants includes: placing the metal substrate in acetone and alcohol solutions in sequence, cleaning it with ultrasonic waves for 5-10 minutes respectively, and then drying it with dry nitrogen gas.

8. The preparation method according to claim 6, characterized in that, In step (2), the plasma sputtering process includes: introducing argon gas and using plasma glow discharge sputtering to treat the metal substrate for 15-20 minutes.

9. The preparation method according to claim 6, characterized in that, In step (3), the preparation of an alternating hard and soft transition layer on the surface of the metal substrate using arc ion plating technology includes: Step (30) uses arc ion plating to prepare the Ti layer. The process conditions are as follows: argon is used as the working gas, the argon pressure is 0.3~0.6 Pa, the DC bias voltage of the substrate is -50~-100 V, the Ti target current is 60~80 A, and the thickness of the Ti layer is controlled to be 5~10 nm. Step (31) uses arc ion plating to prepare a TiN layer. The process conditions are as follows: nitrogen and argon are introduced, the flow rate ratio of nitrogen to argon is 1:4, the DC bias voltage of the substrate is -50~-150V, the purity of the Ti target is ≥99.9%, the Ti target current is 70~90 A, and the thickness of the TiN layer is controlled to be 5~10 nm. Step (32) is to repeat steps (30) and (31) alternately until the thickness of the prepared Ti / TiN soft-hard alternating transition layer reaches 200~500 nm.

10. The preparation method according to claim 6, characterized in that, In step (4), the process conditions for high-power pulsed magnetron sputtering are as follows: argon is used as the working gas, the argon pressure is 0.5~1.0 Pa, the DC bias voltage of the substrate is -50~-150V, AlTiCrVTa high-entropy alloy target and Si target are used, the purity of AlTiCrVTa high-entropy alloy target is ≥99.5% and the power is 1.5~2.0kW, the purity of Si target is ≥99.9% and the power is 0.2~0.5 kW, and the thickness of high-entropy nitride layer is controlled to be 800~1500 nm.

11. The preparation method according to claim 6, characterized in that, Steps (2), (3) and (4) are performed continuously within the same equipment cavity. The AlTiCrVTa high-entropy alloy target and the Si target are installed at the cathode position of the high-power target material, and the Ti target is installed at the cathode position of the arc ion plating.

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