Nanometer alternating coherent growth composite coating special for honeycomb composite material processing and preparation method of nanometer alternating coherent growth composite coating
By preparing an alternating AlTiSiN/ZrN nano-alternating coherent growth composite coating on a honeycomb composite, the problems of tool wear and machining quality in honeycomb composite processing were solved, achieving efficient and wear-resistant machining results.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICHUAN UNIV
- Filing Date
- 2026-03-12
- Publication Date
- 2026-05-12
AI Technical Summary
During the processing of honeycomb composite materials, the cutting tools wear out severely, resulting in high processing costs and difficulty in guaranteeing processing quality and precision. Existing coating designs are prone to cracking and peeling under high-frequency impact, affecting processing efficiency and quality.
A nano-alternating coherent composite coating consisting of AlTiSiN/ZrN alternating layers, AlTiSiN functional layers, and TiAlN transition layers was grown. Coherent interface bonding was formed through gradient bias deposition and atomic deposition methods, thereby improving the bonding strength and toughness of the coating.
It significantly improves tool life, reduces machining costs, and enhances machining quality and precision. The coating exhibits excellent density and oxidation resistance, making it suitable for high-efficiency machining of honeycomb composites.
Smart Images
Figure CN122013185A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of material coating technology. More specifically, this invention relates to a composite coating with alternating nano-coherent growth for honeycomb composite processing and its preparation method. Background Technology
[0002] As a typical lightweight structural material, honeycomb composite materials have become a key material in high-end manufacturing fields such as aerospace, rail transportation, and new energy equipment due to their core advantages such as high specific strength, high specific stiffness, excellent fatigue resistance and significant weight reduction effect. They are widely used in the manufacturing of key components such as aircraft wing panels, spacecraft solar panel substrates and high-speed train body structures.
[0003] However, the processing characteristics of honeycomb composites are constrained by both their structure and material composition, facing processing challenges far exceeding those of traditional homogeneous materials. Due to their porous structure, honeycomb cores exhibit low stiffness and anisotropy. During machining processes such as cutting, drilling, and contouring, the rapid, high-frequency, intermittent impacts of the honeycomb structure easily lead to tool wear, chipping, and built-up edge problems, significantly shortening tool life. This not only increases processing costs but also further exacerbates processing defects due to tool performance degradation, severely affecting the dimensional accuracy, surface quality, and mechanical properties of components, and even leading to component scrapping. This restricts the large-scale application and performance realization of honeycomb composites in high-end equipment. Currently, commonly used tool coatings such as TiAlN and CrN improve tool performance to some extent, but they are still insufficient for honeycomb machining. TiAlN coatings have high hardness but generally low toughness, and their affinity with titanium alloys remains high; single-layer ZrN coatings have good toughness but insufficient hardness and oxidation resistance. Traditional multilayer coating designs (such as TiAlN / ZrN) can combine the advantages of both, but the constant bias voltage during coating deposition leads to defects such as vacancies and voids. The interlayer interfaces are usually incoherent, with relatively concentrated stress, which can easily become the source of crack initiation and propagation under high-frequency impact and high stress.
[0004] In recent years, nano-multilayer coatings have exhibited excellent mechanical properties due to their interfacial effects. If coherent growth can be achieved between adjacent layers, the interfacial bonding can be greatly strengthened, dislocation crossing can be hindered, and the impact toughness and hardness of the coating can be improved. Therefore, developing a nano-alternating composite coating with a coherent growth interface, specifically designed for the cutting characteristics of honeycomb composites, is of great significance for improving processing efficiency and quality. Summary of the Invention
[0005] One object of the present invention is to solve at least the above-mentioned problems and / or defects, and to provide at least the advantages described below.
[0006] To achieve these objectives and other advantages according to the present invention, a composite coating with alternating nanostructures for processing honeycomb composites is provided, wherein the composite coating comprises, from the outside to the inside: an AlTiSiN / ZrN alternating layer, an AlTiSiN functional layer, and a TiAlN transition layer.
[0007] Preferably, in the AlTiSiN / ZrN alternating layer, the thickness of a single AlTiSiN nanolayer is 5~20nm, the thickness of a single ZrN nanolayer is 20~40nm, the lattice mismatch between the two is less than 5%, the thickness of the AlTiSiN functional layer is 20nm-50nm, the thickness of the TiAlN transition layer is 500nm-1000nm, and the total thickness of the composite coating is 2~5μm.
[0008] A method for preparing a composite coating grown by alternating nanostructures specifically for honeycomb composite processing includes the following steps: Step 1: Grind and polish the substrate, then clean and dry it before loading it into the coating furnace cavity. Then adjust the distance between the substrate and the target material to pre-treat the substrate. Step 2: In the coating furnace cavity, nitrogen gas is introduced, and a TiAlN transition layer is deposited on the substrate using a continuous variable bias voltage. Step 3: Deposit an AlTiSiN functional layer on the TiAlN transition layer with constant parameters; Step 4: AlTiSiN and ZrN are deposited sequentially multiple times on the AlTiSiN functional layer in the order of "AlTiSiN-ZrN-AlTiSiN-ZrN" to form a nano-alternating multilayer AlTiSiN / ZrN coating, and finally a composite coating with nano-alternating coherent growth for honeycomb composite processing is obtained.
[0009] Preferably, in step one, the substrate needs to be polished by diamond grinding discs of 800 grit, 1500 grit and 3000 grit in sequence, and then polished with diamond polishing paste. Afterwards, the substrate is cleaned in deionized water with an ultrasonic cleaner for 10 to 20 minutes, and then dried in an oven at 50 to 70°C for 1 to 2 hours.
[0010] Preferably, in step one, the substrate is one of WC-Co cemented carbide substrate, cermet substrate, or high-speed steel substrate.
[0011] Preferably, in step one, the substrate and the target are 40-50 mm apart, and the pretreatment parameters are: the vacuum degree of the deposition chamber is maintained at 3.0 × 10⁻⁶ mm. -3 Pa, the substrate was bombarded with Ar plasma for 20 to 30 minutes at a bias voltage of -640 to -700 V, with an argon flow rate of 300 to 400 sccm and a substrate temperature of 460 to 550 °C.
[0012] Preferably, in step two, the specific parameters for depositing the TiAlN transition layer are: nitrogen flow rate 300~600 sccm, and the target material is Ti. 50 Al 50 The target current is 100~120A, the deposition time is 5~20min, and the substrate bias voltage is gradually increased from 10~20V to 20~80V at a rate of 0.4~1V / min.
[0013] Preferably, in step three, the parameters for depositing the TiAlN transition layer are: the target material is Ti 99.9 Target and Al 82 Si 18 Target, Ti 99.9 Target current 100~130A, Al 82 Si 18 The target current is 130-170A, the substrate bias voltage is -30-50V, and the deposition time is 5-10min.
[0014] Preferably, in step four, the parameters for depositing the multilayer AlTiSiN / ZrN coating are as follows: the target material is Ti. 99.9 Target, Al 82 Si 18 Target and Zr 99 Target, Ti 99.9 Target current 100~120A, Al 82 Si 18 Target current 130~170A, Zr 99 With a target current of 130~180A and a substrate bias of -30~-50V, alternating coatings are deposited using an alternating target power supply switching method. Ti 99.9 Target and Al 82 Si 18 AlTiSiN layers were deposited by electrostatic deposition on the targets, with a single-layer deposition time of 60–120 s. The two targets were then turned off, followed by Zr deposition. 99 ZrN coatings are deposited by target electrostatic deposition, with a single-layer deposition time of 400~800s, and this process is repeated 10~40 times.
[0015] Preferably, after step two and before step three, an AlN layer is deposited on the TiAlN transition layer using atomic layer deposition. Specifically, the substrate with the deposited TiAlN transition layer is transferred to an atomic layer deposition system, and the deposition is carried out under a vacuum of ≤5×10⁻⁶. -4 At Pa, N2, gaseous trimethylaluminum, ammonia, and N2 are sequentially introduced; the flow rates of gaseous trimethylaluminum, ammonia, and N2 are 20~30 sccm, and the time intervals for sequentially introducing N2, gaseous trimethylaluminum, ammonia, and N2 are 5~10s, 10~20s, 10~20s, and 5~10s, respectively. Atomic layer deposition is completed at 350~400℃ to form an AlN layer with a thickness of 10~30nm.
[0016] The present invention has at least the following beneficial effects: (1) The AlTiSiN and ZrN nanolayers of the present invention both have face-centered cubic (FCC) crystal structures, and ZrN(111) / / AlN(111) coherent interfaces are formed between the alternating layers. The mismatch value between the ZrN layer and the AlTiSiN layer is |δ|<5%, and the formation of coherent interfaces is conducive to the bonding of the interfaces between the alternating layers. (2) This invention employs a gradient deposition mode for the TiAlN transition layer, using a gradient target current, substrate bias voltage, and gas flow rate. Initially, a low bias voltage reduces damage to the substrate from ion bombardment, promotes interfacial atomic bonding and element diffusion, and significantly enhances adhesion. In the middle stage, the bias voltage is gradually increased, enhancing particle migration capabilities, promoting surface migration and lattice filling of deposited particles, and reducing defects such as vacancies and voids. The coating becomes denser and the grains are refined layer by layer, achieving grain refinement and film densification. In the later stage, a high bias voltage further enhances surface hardness and wear resistance. Stress is released gradually throughout the process, avoiding excessive internal stress, cracking, and detachment that can easily occur with constant high bias voltage, and also compensating for insufficient density and low performance under constant low bias voltage. In terms of the interfacial mechanism, a low bias voltage is first used to achieve gentle deposition, reducing interfacial damage and enhancing film-substrate atomic bonding; then, the bias voltage is gradually increased to strengthen interfacial interlocking and element diffusion, alleviating internal stress concentration. Gradual bias effectively enhances interfacial bonding strength, improves coating hardness, wear resistance and corrosion resistance, and obtains a film structure with better overall performance. The resulting gradient coating structure has a continuous transition, low residual stress and high bonding strength. (3) The present invention incorporates high Al and Zr elements into the coating, which can not only ensure the oxidation resistance of the coating, but also reduce the friction coefficient of the coating. During the cutting of honeycomb composites, adhesive wear is reduced. The dense, continuous, and gradient structure of the TiAlN transition layer and the AlTiSiN functional layer serve as the support for the multilayer nano-alternating AlTiSiN / ZrN layer, thereby improving the bonding strength, fracture toughness, wear resistance and oxidation resistance of the coating, and thus improving the tool life. (4) The present invention also deposits an AlN layer on the TiAlN transition layer by using atomic deposition method. The atomic-level flatness and pinhole-free characteristics of single-atom layer deposition are used to further fill the tiny gaps in the TiAlN transition layer. The AlN layer and the TiAlN transition layer are atomically bonded, thereby further reducing the porosity of the composite coating. Attached Figure Description
[0017] Figure 1 This is a SEM image of the composite coating obtained in Example 1 of the present invention; Figure 2 This is a schematic diagram of the composite coating obtained in Example 1 of the present invention; Figure 3 This is a schematic diagram of the composite coating obtained in Example 4 of the present invention. Detailed Implementation
[0018] The present invention will now be described in further detail with reference to the accompanying drawings, so that those skilled in the art can implement it based on the description.
[0019] It should be understood that terms such as “having,” “comprising,” and “including” as used herein do not exclude the presence or addition of one or more other elements or combinations thereof.
[0020] Example 1 A method for preparing a composite coating grown by alternating nanostructures specifically for honeycomb composite processing includes the following steps: Step 1: The WC-Co cemented carbide substrate is successively ground and polished using 800-grit, 1500-grit, and 3000-grit diamond grinding wheels. Then, it is cleaned in deionized water using an ultrasonic cleaner for 10 minutes, followed by drying in an oven at 50°C for 1 hour. The dried substrate is then placed into the coating furnace cavity, with the distance between the substrate and the target adjusted to 40 mm. The vacuum level in the deposition chamber is maintained at 3.0 × 10⁻⁶. -3 Pa, the sample was bombarded with Ar plasma for 20 min at a bias voltage of -640V, the argon flow rate was 300sccm, and the substrate temperature was 460℃. Step 2: Deposit a TiAlN transition layer using a continuous gradient bias: Under a nitrogen flow rate of 500 sccm, the target material is Ti. 50 Al 50 The target current was 115A, the deposition time was 15min, and the substrate bias voltage was gradually increased from 20V to 60V at a rate of 0.8V / min to deposit a 500nm TiAlN transition layer on the substrate. Step 3: Deposit AlTiSiN functional layer: The target material is Ti. 99.9 Target and Al 82 Si 18 Target, Ti target current 115A, Al 82 Si 18 With a target current of 165A, a substrate bias of -40V, and a deposition time of 5 min, a 30nm AlTiSiN functional layer was deposited on the TiAlN transition layer. Step 4: Deposition of alternating nano-layer AlTiSiN / ZrN coating: Target material is Ti 99.9 Target, Al 82 Si 18 Target and Zr 99 Target, Ti 99.9 Target current 115A, Al 82 Si 18 Target current 170A, Zr 99With a target current of 160A and a substrate bias of -40V, alternating coatings were deposited using an alternating target power supply. Ti 99.9 Target and Al 82 Si 18 AlTiSiN layers were deposited by target electrolysis, with a single-layer deposition time of 90 s and a single AlTiSiN layer thickness of 15 nm. Both targets were then turned off, followed by Zr deposition. 99 ZrN coatings were deposited by target electrostatic deposition, with a single-layer deposition time of 420 s and a single-layer ZrN thickness of 22 nm. This process was repeated 40 times to form a nano-alternating multilayer AlTiSiN / ZrN coating on the AlTiSiN functional layer. The final result was a 2 μm thick composite coating specifically designed for honeycomb composite processing, grown using nano-alternating coherent growth. Its SEM image is shown below. Figure 1 As shown in the diagram, Figure 2 As shown.
[0021] Example 2 A method for preparing a composite coating grown by alternating nanostructures specifically for honeycomb composite processing includes the following steps: Step 1: The cermet substrate is sequentially polished using 800-grit, 1500-grit, and 3000-grit diamond grinding wheels. Then, it is cleaned in deionized water using an ultrasonic cleaner for 10 minutes, followed by drying in an oven at 50°C for 1 hour. The dried substrate is then placed into the coating furnace cavity, with the distance between the substrate and the target adjusted to 50 mm. The vacuum level in the deposition chamber is maintained at 3.0 × 10⁻⁶. -3 Pa, the sample was bombarded with Ar plasma for 20 min at a bias voltage of -700V, the argon flow rate was 400sccm, and the substrate temperature was 550℃. Step 2: Deposit a TiAlN transition layer using a continuous gradient bias: Under a nitrogen flow rate of 500 sccm, the target material is Ti. 50 Al 50 The target current was 120A, the deposition time was 15min, and the substrate bias voltage was gradually increased from 20V to 70V at a rate of 1V / min to deposit a 600nm TiAlN transition layer on the substrate. Step 3: Deposit AlTiSiN functional layer: The target material is Ti. 99.9 Target and Al 82 Si 18 Target, Ti target current 120A, Al 82 Si 18 A 50 nm AlTiSiN functional layer was deposited on the TiAlN transition layer with a target current of 170 A, a substrate bias of -40 V, and a deposition time of 6 min. Step 4: Deposition of alternating nano-layer AlTiSiN / ZrN coating: Target material is Ti 99.9 Target, Al 82 Si18 Target and Zr 99 Target, Ti 99.9 Target current 120A, Al 82 Si 18 Target current 170A, Zr 99 With a target current of 160A and a substrate bias of -40V, alternating coatings were deposited using an alternating target power supply. Ti 99.9 Target and Al 82 Si 18 AlTiSiN layers were deposited using target electrostatic deposition, with a single-layer deposition time of 100 s and a single AlTiSiN layer thickness of 20 nm. Both targets were then turned off, followed by Zr deposition. 99 ZrN coatings were deposited by target electrostatic deposition, with a single-layer deposition time of 500s and a single-layer ZrN thickness of 39nm. This process was repeated 40 times to form a nano-alternating multilayer AlTiSiN / ZrN coating on the AlTiSiN functional layer, ultimately obtaining a composite coating with a thickness of 3μm that is specially grown by nano-alternating coherent growth for honeycomb composite processing.
[0022] Example 3 A method for preparing a composite coating grown by alternating nanostructures specifically for honeycomb composite processing includes the following steps: Step 1: The high-speed steel substrate is sequentially polished using 800-grit, 1500-grit, and 3000-grit diamond grinding wheels. Then, it is cleaned in deionized water using an ultrasonic cleaner for 10 minutes, followed by drying in an oven at 50°C for 1 hour. The dried substrate is then placed into the coating furnace cavity, with the distance between the substrate and the target material adjusted to 50 mm. The vacuum level in the deposition chamber is maintained at 3.0 × 10⁻⁶. - 3 Pa, the sample was bombarded with Ar plasma for 20 min at a bias voltage of -700V, the argon flow rate was 400sccm, and the substrate temperature was 550℃. Step 2: Deposit a TiAlN transition layer using a continuous gradient bias: Under a nitrogen flow rate of 500 sccm, the target material is Ti. 50 Al 50 The target current was 120A, the deposition time was 15min, and the substrate bias voltage was gradually increased from 20V to 70V at a rate of 1V / min to deposit a 600nm TiAlN transition layer on the substrate. Step 3: Deposit AlTiSiN functional layer: The target material is Ti. 99.9 Target and Al 82 Si 18 Target, Ti target current 120A, Al 82 Si 18 A 50 nm AlTiSiN functional layer was deposited on the TiAlN transition layer with a target current of 170 A, a substrate bias of -40 V, and a deposition time of 6 min. Step 4: Deposition of alternating nano-layer AlTiSiN / ZrN coating: Target material is Ti 99.9 Target, Al 82 Si 18 Target and Zr 99 Target, Ti 99.9 Target current 120A, Al 82 Si 18 Target current 170A, Zr 99 With a target current of 160A and a substrate bias of -40V, alternating coatings were deposited using an alternating target power supply. Ti 99.9 Target and Al 82 Si 18 AlTiSiN layers were deposited using target electrostatic deposition, with a single-layer deposition time of 100 s and a single AlTiSiN layer thickness of 20 nm. Both targets were then turned off, followed by Zr deposition. 99 ZrN coatings were deposited by target electrostatic deposition, with a single-layer deposition time of 500s and a single-layer ZrN thickness of 39nm. This process was repeated 40 times to form a nano-alternating multilayer AlTiSiN / ZrN coating on the AlTiSiN functional layer, ultimately obtaining a composite coating with a thickness of 3μm that is specially grown by nano-alternating coherent growth for honeycomb composite processing.
[0023] Example 4 A method for preparing a composite coating grown by alternating nanostructures specifically for honeycomb composite processing includes the following steps: Step 1: The WC-Co cemented carbide substrate is successively ground and polished using 800-grit, 1500-grit, and 3000-grit diamond grinding wheels. Then, it is cleaned in deionized water using an ultrasonic cleaner for 10 minutes, followed by drying in an oven at 50°C for 1 hour. The dried substrate is then placed into the coating furnace cavity, with the distance between the substrate and the target adjusted to 40 mm. The vacuum level in the deposition chamber is maintained at 3.0 × 10⁻⁶. -3 Pa, the sample was bombarded with Ar plasma for 20 min at a bias voltage of -640V, the argon flow rate was 300sccm, and the substrate temperature was 460℃. Step 2: Deposit a TiAlN transition layer using a continuous gradient bias: Under a nitrogen flow rate of 500 sccm, the target material is Ti. 50 Al 50 The target current was 115A, the deposition time was 15min, and the substrate bias voltage was gradually increased from 20V to 60V at a rate of 0.8V / min to deposit a 500nm TiAlN transition layer on the substrate. Step 3: Transfer the substrate with the deposited TiAlN transition layer to an atomic layer deposition system, under a vacuum degree ≤ 5 × 10⁻⁶. -4At Pa, N2 was first introduced at a flow rate of 20 sccm for 5 s, followed by gaseous trimethylaluminum at a flow rate of 20 sccm for 10 s, then ammonia at a flow rate of 20 sccm for 10 s, and finally N2 at a flow rate of 20 sccm for 5 s. Atomic layer deposition was then completed at 400 °C to form an AlN layer with a thickness of 10 nm. Step 4: Deposit AlTiSiN functional layer: The target material is Ti. 99.9 Target and Al 82 Si 18 Target, Ti target current 115A, Al 82 Si 18 With a target current of 165A, a substrate bias of -40V, and a deposition time of 5 min, a 30nm AlTiSiN functional layer was deposited on the AlN layer. Step 5: Deposit a nano-alternating multilayer AlTiSiN / ZrN coating: The target material is Ti. 99.9 Target, Al 82 Si 18 Target and Zr 99 Target, Ti 99.9 Target current 115A, Al 82 Si 18 Target current 170A, Zr 99 With a target current of 160A and a substrate bias of -40V, alternating coatings were deposited using an alternating target power supply. Ti 99.9 Target and Al 82 Si 18 AlTiSiN layers were deposited by target electrolysis, with a single-layer deposition time of 90 s and a single AlTiSiN layer thickness of 15 nm. Both targets were then turned off, followed by Zr deposition. 99 ZrN coatings were deposited by target electrostatic deposition, with a single-layer deposition time of 420 s and a single-layer ZrN thickness of 22 nm. This process was repeated 40 times to form a nano-alternating multilayer AlTiSiN / ZrN coating on the AlTiSiN functional layer. The final result was a 2 μm thick composite coating specifically designed for honeycomb composite processing, grown using nano-alternating coherent growth. A schematic diagram is shown below. Figure 3 As shown.
[0024] Comparative Example 1 The difference between this comparative example and Example 1 is that in step two, the substrate bias voltage is a constant 60V, while the other steps are the same as in Example 1.
[0025] Porosity and adhesion tests were conducted on the composite coatings prepared in Examples 1-4 (grown using alternating nanostructures) and Comparative Example 1. The results showed that the composite coatings prepared in Examples 1-3 had a dense structure with porosity below 5%, good adhesion between coating layers and between the coating and the substrate, and adhesion forces greater than 70 N. They exhibited good resistance to adhesive wear during high-speed milling of the honeycomb composite. The composite coating prepared in Example 4 was achieved by depositing an AlN layer on the TiAlN transition layer using atomic deposition. The atomic-level flatness and pinhole-free characteristics of single-atom-layer deposition further filled the tiny voids in the TiAlN transition layer, resulting in atomic-level adhesion between the AlN layer and the TiAlN transition layer. This further reduced the porosity of the composite coating to below 1.5%. In contrast, Comparative Example 1, using a constant bias voltage, produced a composite coating with a porosity of 12% and an adhesion force of 45 N, significantly inferior to that of Examples 1-4.
[0026] The number of devices and processing scale described herein are for the purpose of simplifying the description of the invention. Applications, modifications, and variations of the invention will be readily apparent to those skilled in the art.
[0027] Although embodiments of the present invention have been disclosed above, they are not limited to the applications listed in the specification and embodiments. They can be applied to various fields suitable for the present invention. For those skilled in the art, other modifications can be easily made. Therefore, without departing from the general concept defined by the claims and their equivalents, the present invention is not limited to the specific details and illustrations shown and described herein.
Claims
1. A composite coating with alternating nano-coherent growth specifically for honeycomb composite processing, characterized in that, The composite coating consists of, from the outside to the inside: an AlTiSiN / ZrN alternating layer, an AlTiSiN functional layer, and a TiAlN transition layer.
2. The composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 1, characterized in that, In the AlTiSiN / ZrN alternating layer, the thickness of a single AlTiSiN nanolayer is 5~20nm, the thickness of a single ZrN nanolayer is 20~40nm, the lattice mismatch between the two is less than 5%, the thickness of the AlTiSiN functional layer is 20nm-50nm, the thickness of the TiAlN transition layer is 500nm-1000nm, and the total thickness of the composite coating is 2~5μm.
3. A method for preparing a composite coating with alternating nano-coherent growth for honeycomb composite processing as described in any one of claims 1-2, characterized in that, Includes the following steps: Step 1: Grind and polish the substrate, then clean and dry it before loading it into the coating furnace cavity. Then adjust the distance between the substrate and the target material to pre-treat the substrate. Step 2: In the coating furnace cavity, nitrogen gas is introduced, and a TiAlN transition layer is deposited on the substrate using a continuous variable bias voltage. Step 3: Deposit an AlTiSiN functional layer on the TiAlN transition layer with constant parameters; Step 4: AlTiSiN and ZrN are deposited sequentially multiple times on the AlTiSiN functional layer in the order of "AlTiSiN-ZrN-AlTiSiN-ZrN" to form a nano-alternating multilayer AlTiSiN / ZrN coating, and finally a composite coating with nano-alternating coherent growth for honeycomb composite processing is obtained.
4. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, In step one, the substrate needs to be polished by diamond grinding discs of 800 grit, 1500 grit and 3000 grit in sequence, and then polished with diamond polishing paste. After that, the substrate is cleaned in deionized water with an ultrasonic cleaner for 10 to 20 minutes, and then dried in an oven at 50 to 70°C for 1 to 2 hours.
5. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, In step one, the substrate is one of WC-Co cemented carbide substrate, cermet substrate, or high-speed steel substrate.
6. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, In step one, the substrate and the target are 40-50 mm apart, and the pretreatment parameters are: the vacuum degree of the deposition chamber is maintained at 3.0 × 10⁻⁶. -3 Pa, the substrate was bombarded with Ar plasma for 20 to 30 minutes at a bias voltage of -640 to -700 V, with an argon flow rate of 300 to 400 sccm and a substrate temperature of 460 to 550 °C.
7. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, In step two, the specific parameters for depositing the TiAlN transition layer are: nitrogen flow rate 300~600 sccm, and the target material is Ti. 50 Al 50 The target current is 100~120A, the deposition time is 5~20min, and the substrate bias voltage is gradually increased from 10~20V to 20~80V at a rate of 0.4~1V / min.
8. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, In step three, the parameters for depositing the TiAlN transition layer are: the target material is Ti 99.9 Target and Al 82 Si 18 Target, Ti 99.9 Target current 100~130A, Al 82 Si 18 The target current is 130–170 A, the substrate bias voltage is -30–-50 V, and the deposition time is 5–10 min.
9. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, In step four, the parameters for depositing the multilayer AlTiSiN / ZrN coating are as follows: the target material is Ti. 99.9 Target, Al 82 Si 18 Target and Zr 99 Target, Ti 99.9 Target current 100~120A, Al 82 Si 18 Target current 130~170A, Zr 99 With a target current of 130~180A and a substrate bias of -30~-50V, alternating coatings are deposited using an alternating target power supply. Ti 99.9 Target and Al 82 Si 18 AlTiSiN layers were deposited by electrostatic deposition on the targets, with a single-layer deposition time of 60–120 s. The two targets were then turned off, followed by Zr deposition. 99 ZrN coatings are deposited by target electrostatic deposition, with a single-layer deposition time of 400~800s, and this process is repeated 10~40 times.
10. The method for preparing the composite coating with alternating nano-coherent growth for honeycomb composite processing as described in claim 3, characterized in that, After step two and before step three, an AlN layer is deposited on the TiAlN transition layer using atomic layer deposition. Specifically, the substrate with the deposited TiAlN transition layer is transferred to an atomic layer deposition system, and the deposition is carried out under a vacuum of ≤5×10⁻⁶. -4 At Pa, N2, gaseous trimethylaluminum, ammonia, and N2 are sequentially introduced; the flow rates of gaseous trimethylaluminum, ammonia, and N2 are 20~30 sccm, and the time intervals for sequentially introducing N2, gaseous trimethylaluminum, ammonia, and N2 are 5~10s, 10~20s, 10~20s, and 5~10s, respectively. Atomic layer deposition is completed at 350~400℃ to form an AlN layer with a thickness of 10~30nm.