Method and device for predicting rate of high-temperature deposition growth SiC, equipment and medium

Abstract

The invention relates to a rate prediction method and device for high-temperature deposition growth of SiC, equipment and a medium, and relates to the field of silicon carbide preparation.The method comprises the steps that a source gas system adopted by a high-temperature chemical vapor deposition method is obtained, and a chemical kinetics mechanism model is established; establishing thermodynamic data and a transportation database according to gas components related to the chemical kinetics mechanism model; a working condition is specified, grids between a gas inlet and the surface of a seed crystal are divided, then a steady-state control equation is obtained through solving by combining a chemical kinetic mechanism model, thermodynamic data and a transportation database, iterative operation is carried out till calculation convergence of a flow field, a temperature field and a chemical field, and the growth rate of the high-temperature chemical vapor deposition growth silicon carbide crystal is obtained. According to the rate prediction method provided by the invention, the rate of growing the silicon carbide crystals by the high-temperature chemical vapor deposition method can be quickly and accurately calculated by solving a one-dimensional impingement flow, spiral flow and chemical component transport model control equation.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide preparation, specifically to a method, apparatus, equipment, and medium for predicting the rate of high-temperature deposition growth of SiC, and more particularly to a one-dimensional calculation method, apparatus, equipment, and medium for predicting the growth of silicon carbide crystals by high-temperature chemical vapor deposition. Background Technology

[0002] Silicon carbide has evolved from a high-potential wide-bandgap semiconductor into a widely recognized material in the field of power electronics. Compared to silicon, its superior physical properties, such as high breakdown electric field, excellent thermal conductivity, and extremely high electron saturation velocity, have made silicon carbide widely favored for energy-saving applications in electronic devices and systems.

[0003] The superior performance of silicon carbide power devices has led to a surge in demand, making it crucial to increase the supply of silicon carbide wafers to expand the application of silicon carbide power devices.

[0004] Currently, the mainstream method for growing silicon carbide crystals uses physical vapor transport technology, which has relatively mature equipment, but source powder replenishment is difficult and the growth rate is low (0.1-0.2 mm / h). High-temperature chemical vapor deposition (HTCVD), on the other hand, can achieve high-quality and rapid growth of silicon carbide crystals (1-3 mm / h) under certain conditions by continuously introducing source gas, and therefore has become a crystal growth technology that has attracted much attention.

[0005] Currently, the growth of silicon carbide crystals using high-temperature chemical vapor deposition is still in the development stage, and its engineering applications are not yet mature. The impact of process parameters on the growth rate still needs to be clarified, and the equipment iteration speed is slow and the cost is high, which to some extent limits the early research and development of the equipment.

[0006] Therefore, developing a method for calculating the growth rate of silicon carbide crystals grown by high-temperature chemical vapor deposition is of great significance for equipment development, as it can significantly reduce development costs and accelerate the development process. Summary of the Invention

[0007] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method, apparatus, equipment and medium for predicting the growth rate of SiC by high-temperature deposition, so as to achieve efficient and accurate prediction of the growth rate in SiC by high-temperature deposition, thereby improving the optimization efficiency of the process and equipment for high-temperature chemical vapor deposition of silicon carbide.

[0008] To achieve this objective, the present invention adopts the following technical solution:

[0009] In a first aspect, the present invention provides a method for predicting the rate of high-temperature deposition growth of silicon carbide, the method comprising:

[0010] Obtain the source gas system used in high-temperature chemical vapor deposition and establish a chemical kinetic mechanism model;

[0011] Based on the gas components involved in the chemical kinetic mechanism model, a thermodynamic data and transport database are established;

[0012] The working conditions are specified and the grid between the gas inlet and the seed crystal surface is divided. Then, the steady-state control equations applicable to impingement flow, spiral flow and chemical component transport are obtained by combining chemical kinetic mechanism model, thermodynamic data and transport database. Iterative calculations are performed until the flow field, temperature field and chemical field calculations converge, and the growth rate of silicon carbide crystals grown by high temperature chemical vapor deposition is obtained.

[0013] The rate prediction method provided by this invention can quickly and accurately calculate the growth rate of silicon carbide crystals by high-temperature chemical vapor deposition by solving the governing equations of one-dimensional impingement flow, spiral flow and chemical component transport model, providing a reference for equipment development and reducing R&D costs.

[0014] As a preferred embodiment of the present invention, the source gas system includes: propane, silane and hydrogen.

[0015] As a preferred embodiment of the present invention, the gas components include: propane, silane, hydrogen, and gases generated during the reaction.

[0016] As a preferred technical solution of the present invention, the specified operating conditions include: the composition, flow rate and temperature of the gas at the reactor inlet, the surface temperature and rotation speed of the rotating seed crystal, the operating pressure and the straight-line distance from the gas inlet to the surface of the seed crystal.

[0017] As a preferred technical solution of the present invention, the solution of the steady-state governing equations applicable to impinging flow, helical flow and chemical component transport includes: mass conservation equation, momentum conservation equation, energy conservation equation, gas phase component transport conservation equation and surface material component transport conservation equation.

[0018] As a preferred technical solution of the present invention, the calculation convergence includes: the calculated residual values ​​of the flow field, temperature field and chemical field are all less than the target residual.

[0019] As a preferred technical solution of the present invention, the chemical field includes: the one-dimensional distribution result of chemical substances along the path from the gas inlet to the seed crystal surface.

[0020] In a second aspect, the present invention provides a rate prediction device for high-temperature deposition growth of silicon carbide, the rate prediction device comprising:

[0021] The first module is used to obtain the source gas system used in high-temperature chemical vapor deposition and establish a chemical kinetic mechanism model.

[0022] The second module is used to establish thermodynamic data and transport databases based on the gas components involved in the chemical kinetic mechanism model;

[0023] The prediction module is used to divide the grid between the gas inlet and the seed crystal surface based on the specified working conditions. Then, it combines the chemical kinetic mechanism model, thermodynamic data and transport database to solve the steady-state control equation applicable to impingement flow, helical flow and chemical component transport. It is then iterated until the flow field, temperature field and chemical field calculations converge to obtain the growth rate of silicon carbide crystals grown by high-temperature chemical vapor deposition.

[0024] Thirdly, the present invention provides an electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores a computer program executable by the at least one processor, the computer program being executed by the at least one processor to enable the at least one processor to perform the rate prediction method for high-temperature deposition growth of silicon carbide as described in the first aspect.

[0025] Fourthly, the present invention provides a computer storage medium storing computer-executable instructions, which, when executed by a processor, implement the rate prediction method for high-temperature deposition growth of silicon carbide as described in the first aspect.

[0026] Compared with existing technical solutions, the present invention has the following beneficial effects:

[0027] The rate prediction method provided by this invention adopts a one-dimensional calculation model, which is much faster than high-dimensional (two-dimensional and three-dimensional) calculation models. It can quickly calculate the growth rate of silicon carbide crystals under given process parameters, and at the same time obtain the one-dimensional distribution of gas components along the path from the inlet to the seed crystal surface. Thus, the influence of process parameters on the growth rate can be determined, achieving the goal of rapid process optimization and accelerating the optimization and upgrading of equipment and processes. Attached Figure Description

[0028] Figure 1 This is a flowchart of a method for predicting the rate of high-temperature deposition growth of silicon carbide provided in an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of a rate prediction device for high-temperature deposition growth of silicon carbide provided in an embodiment of the present invention;

[0030] Figure 3 This is a schematic diagram of an electronic device provided in an embodiment of the present invention;

[0031] Figure 4 This is a flowchart of rate prediction in Embodiment 1 of the present invention;

[0032] Figure 5 This is a schematic diagram of the deposition and growth of silicon carbide in Embodiment 1 of the present invention;

[0033] Figure 6 This is a rate graph of silicon carbide crystal growth by high-temperature chemical vapor deposition obtained in Example 1 of the present invention;

[0034] Figure 7 This is a gas composition distribution diagram along the path from the gas inlet to the seed crystal surface obtained in Embodiment 1 of the present invention.

[0035] In the picture:

[0036] 100 - Module 1, 200 - Module 2, 300 - Prediction Module;

[0037] 10-Electronic device, 11-Processor, 12-ROM, 13-RAM, 14-Bus, 15-I / O interface, 16-Input unit, 17-Output unit, 18-Storage unit, 19-Communication unit.

[0038] The present invention will now be described in further detail. However, the examples described below are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the claims. Detailed Implementation

[0039] To better illustrate the present invention and facilitate understanding of its technical solutions, typical but non-limiting embodiments of the present invention are as follows:

[0040] I. This embodiment provides a method for predicting the rate of high-temperature deposition and growth of silicon carbide, the process of which is as follows: Figure 1 The details are as follows:

[0041] Obtain the source gas system used in high-temperature chemical vapor deposition and establish a chemical kinetic mechanism model;

[0042] Based on the gas components involved in the chemical kinetic mechanism model, a thermodynamic data and transport database are established;

[0043] The working conditions are specified and the grid between the gas inlet and the seed crystal surface is divided. Then, the steady-state control equations applicable to impingement flow, spiral flow and chemical component transport are obtained by combining chemical kinetic mechanism model, thermodynamic data and transport database. Iterative calculations are performed until the flow field, temperature field and chemical field calculations converge, and the growth rate of silicon carbide crystals grown by high temperature chemical vapor deposition is obtained.

[0044] The source gas system includes propane, silane, and hydrogen.

[0045] In this invention, the chemical kinetic mechanism model established based on the source gas system includes: a series of major chemical reactions that occur in the source gas at high temperature, which can be obtained from existing technologies (Allendorf MD, Kee R J. A model of silicon carbide chemical vapor deposition[J]. Journal of the Electrochemical Society, 1991, 138(3): 841.).

[0046] The gaseous components include propane, silane, hydrogen, and gases generated during the reaction.

[0047] In this invention, the gas generated during the reaction process includes one or a combination of at least two of the following: C2H2, C2H4, and C2H5.

[0048] In this invention, -CH3, -SiH2, -SiH, etc. will also be generated during the reaction process.

[0049] In this invention, establishing thermodynamic data and transport databases based on gas components includes: establishing a corresponding database by matching the thermodynamic data and transport data of each gas component.

[0050] In this invention, thermodynamic data include: specific heat capacity, enthalpy, and entropy.

[0051] In this invention, the transport database includes viscosity, thermal conductivity, and diffusion coefficient.

[0052] In this invention, thermodynamic data is used to calculate the exothermic and endothermic effects of chemical reactions, describe the equilibrium state of the system, energy changes, and the probability of the reaction occurring; the transport parameters in the transport database are used to describe the spatial transport of mass, momentum, and energy.

[0053] The specified operating conditions include: gas composition, flow rate and temperature at the reactor inlet, surface temperature and rotation speed of the rotating seed crystal, operating pressure, and straight-line distance from the gas inlet to the seed crystal surface.

[0054] In this invention, since the seed crystal rotation speed is high in high-temperature chemical vapor deposition, typically reaching 1000 r / min, an unconstrained infinite-radius disk flow model can be used for approximation. Combined with a chemical kinetic mechanism model, thermodynamic data, and transport database, steady-state governing equations applicable to impinging flow, helical flow, and chemical component transport are obtained, including:

[0055] mass conservation equation:

[0056]

[0057] In the formula, t is time (s); ρ is density (kg / m³). 3 u is the axial velocity, m / s; x is the normal distance from the gas inlet to the seed crystal surface, m; V = v / r is the scaled radial velocity, s. -1 v is the radial velocity, m / s; r is the seed crystal radius, m.

[0058] Momentum conservation equation:

[0059]

[0060] In the formula, W = w / r is the scaled circumferential velocity, s -1 w is the circumferential velocity, m / s; μ is the dynamic viscosity, Pa·s; p m Let Pa be the spatially varying pressure component in the radial momentum equation.

[0061] Energy conservation equation:

[0062]

[0063] In the formula, T is temperature, K; c p λ is the specific heat capacity, J / (kg·K); λ is the thermal conductivity, W / (m·K); the subscript k represents the k-th component; Y is the mass fraction of the gas phase component, %. For chemical production rate, mol / (m 3 s); h is enthalpy, J / kg; M is molecular mass, kg / mol; S q (x) represents the space-dependent heat source term, W / m 3 .

[0064] Gas phase component transport conservation equation:

[0065]

[0066] In the formula, K represents the total number of chemical components; K g The quantity of the gaseous components; P is the average pressure, P; R is the universal gas constant, J / (mol·K); The average molecular weight of the mixture is expressed in kg / mol.

[0067] Surface material component transport conservation equation:

[0068]

[0069] In the formula, Z k The number of surface species sites; The chemical formation rate of a substance through a surface reaction, expressed in mol / (m 2 s); Г nFor the surface site density of site type n, m -2 ;K s This refers to the quantity of surface material components.

[0070] In this invention, the flow field, temperature field, and chemical field are calculated and updated. It is then determined whether the calculation has converged. If the calculation has not converged, the next iteration step is initiated, and the calculation is repeated until convergence is achieved. If the convergence criterion is met, the calculation ends and the result is output.

[0071] In this invention, the flow field refers to the flow field of gas flow velocity at various locations within the reaction region.

[0072] In this invention, the temperature field refers to the temperature field of the temperature distribution at various locations within the reaction region.

[0073] In this invention, the chemical field refers to the field representing the distribution of gas components at various locations within the reaction region.

[0074] In this invention, computational convergence includes: the calculated residual values ​​of the flow field, temperature field, and chemical field are all less than the target residual (for example, the target residual can be selected as ≤10). -3 (The specific choice can be made based on actual requirements).

[0075] The chemical field includes the one-dimensional distribution of chemical substances along the path from the gas inlet to the seed crystal surface.

[0076] In summary, the one-dimensional calculation method for predicting the growth of silicon carbide crystals by high-temperature chemical vapor deposition (CVD) provided by this invention can quickly calculate the growth rate of silicon carbide crystals and the one-dimensional distribution of chemical substances along the path from the inlet to the seed crystal surface by solving one-dimensional flow, energy, and chemical conservation equations. This can provide a reference for equipment development, reducing R&D costs while accelerating the development process.

[0077] II. This embodiment provides a device for predicting the rate of high-temperature silicon carbide deposition growth, such as... Figure 2 As shown, the rate prediction device includes:

[0078] The first module is used to obtain the source gas system used in high-temperature chemical vapor deposition and establish a chemical kinetic mechanism model.

[0079] The second module is used to establish thermodynamic data and transport databases based on the gas components involved in the chemical kinetic mechanism model;

[0080] The prediction module is used to divide the grid between the gas inlet and the seed crystal surface based on the specified working conditions, and then solve the steady-state control equations applicable to impingement flow, spiral flow and chemical component transport. Iterative calculations are performed until the flow field, temperature field and chemical field calculations converge, and the growth rate of silicon carbide crystals grown by high-temperature chemical vapor deposition is obtained.

[0081] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.

[0082] III. This embodiment provides an electronic device intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (e.g., helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0083] like Figure 3 As shown, the electronic device 10 includes at least one processor 11 and a memory, such as a read-only memory (ROM) 12 or a random access memory (RAM) 13, communicatively connected to the at least one processor 11. The memory stores computer programs executable by the at least one processor. The processor 11 can perform various appropriate actions and processes based on the computer program stored in the ROM 12 or loaded into the RAM 13 from storage unit 18. The RAM 13 can also store various programs and data required for the operation of the electronic device 10. The processor 11, ROM 12, and RAM 13 are interconnected via a bus 14. An I / O interface 15 is also connected to the bus 14.

[0084] Multiple components in electronic device 10 are connected to I / O interface 15, including: input unit 16, such as keyboard, mouse, etc.; output unit 17, such as various types of displays, speakers, etc.; storage unit 18, such as disk, optical disk, etc.; and communication unit 19, such as network card, modem, wireless transceiver, etc. Communication unit 19 allows electronic device 10 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0085] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, digital signal processors (DSPs), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above, such as the rate prediction method for high-temperature deposition growth of silicon carbide.

[0086] In some embodiments, the rate prediction method for high-temperature deposition growth of silicon carbide can be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed on electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the rate prediction method for high-temperature deposition growth of silicon carbide described above can be performed. Alternatively, in other embodiments, processor 11 can be configured to perform the rate prediction method for high-temperature deposition growth of silicon carbide by any other suitable means (e.g., by means of firmware).

[0087] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0088] Computer programs used to implement the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be performed. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0089] In the context of this invention, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination thereof. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof.

[0090] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the electronic device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0091] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or middleware components (e.g., application servers), or frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.

[0092] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.

[0093] The server provided in this embodiment includes: a memory, a processor, and a computer program stored in the memory and capable of running on the processor. When the processor executes the program, it implements a method for predicting the rate of high-temperature deposition growth of silicon carbide.

[0094] Unless otherwise specifically stated, terms such as processing, calculation, operation, determination, display, etc., may refer to the actions and / or processes of one or more processing or computing systems or similar devices that represent the manipulation and conversion of data representing physical (e.g., electronic) quantities within the registers or memory of the processing system into other data similarly representing physical quantities within the memory, registers, or other such information storage, transmission, or display devices of the processing system. Information and signals can be represented using any of a variety of different techniques and methods. For example, data, instructions, commands, information, signals, bits, symbols, and chips mentioned throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or particles, light fields or particles, or any combination thereof.

[0095] Those skilled in the art will also understand that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with embodiments of the present invention can all be implemented as electronic hardware, computer software, or a combination thereof. To clearly illustrate the interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps described above are generally described in terms of their functionality. Whether this functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art can implement the described functionality in alternative ways for each specific application; however, such implementation decisions should not be construed as departing from the scope of protection of the present invention.

[0096] The steps of the methods or algorithms described in conjunction with the embodiments herein can be directly embodied in hardware, software modules executed by a processor, or a combination thereof. The software modules can reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disks, removable disks, CD-ROMs, or any other form of storage medium well known in the art. An exemplary storage medium is connected to the processor, enabling the processor to read information from and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and storage medium can reside in an ASIC. The ASIC can reside in a user terminal. Alternatively, the processor and storage medium can exist as discrete components in the user terminal.

[0097] For software implementation, the techniques described in this invention can be implemented using modules (e.g., procedures, functions, etc.) that perform the functions described in this application. This software code can be stored in memory units and executed by a processor. The memory units can be implemented within the processor or externally; in the latter case, they are communicatively coupled to the processor via various means, as is well known in the art.

[0098] IV. To illustrate the predictive effect achievable by the high-temperature deposition growth rate prediction method for silicon carbide provided by this invention, a practical example is used as follows:

[0099] Example 1

[0100] This embodiment provides a method for predicting the rate of high-temperature silicon carbide deposition growth, the process of which is as follows: Figure 4 As shown, the specific principle is as follows: Figure 5 As shown, specifically, after the source gas enters from the reactor inlet, it undergoes a complex chemical reaction at high temperature and reaches the seed crystal surface in a laminar flow form. At this time, the seed crystal is in a high-speed rotating state, and the fluid near the seed crystal wall will flow uniformly towards the outer edge of the seed crystal under the action of friction and centrifugal force, and finally flow to the outlet. The specific prediction process is as follows:

[0101] The source gas system (propane, silane, and hydrogen) used in high-temperature chemical vapor deposition was determined, and a chemical kinetic mechanism model was established.

[0102] Identify the gas components involved in the mechanism model and establish corresponding thermodynamic data and transport databases;

[0103] Specify the gas composition, flow rate and temperature at the reactor inlet, specify the surface temperature and rotation speed of the rotating seed crystal, specify the operating pressure, and specify the straight-line distance from the gas inlet to the seed crystal surface;

[0104] Divide the grid between the gas inlet and the seed crystal surface;

[0105] Set the convergence criterion for the calculation, namely, minimum objective residual of 10. -3 ;

[0106] Then, combining chemical kinetics mechanism models, thermodynamic data, transport databases, specified operating conditions, and grids, the steady-state governing equations applicable to impinging flow, helical flow, and chemical component transport are solved. Iterative calculations update the velocity, temperature, and gas composition information at each grid point, updating the seed crystal surface deposition rate. During the calculation, it checks whether the calculated residuals of the flow field, temperature field, and chemical field are less than the target residuals, i.e., it checks whether the current calculation has converged. If not, the calculation is repeated until convergence is achieved. After convergence, the rate of silicon carbide crystal growth by high-temperature chemical vapor deposition can be obtained, such as... Figure 6 As shown, the gas composition distribution along the path from the gas inlet to the seed crystal surface within the reactor is as follows: Figure 7 As shown.

[0107] In summary, the rate prediction method provided by this invention can quickly calculate the growth rate of silicon carbide crystals by high-temperature chemical vapor deposition by solving the governing equations of one-dimensional impingement flow, spiral flow, and chemical component transport model, thereby optimizing existing processes, providing a reference for equipment development, and reducing R&D costs.

[0108] The present invention is described in detail through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions for the components used in the present invention, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0109] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0110] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0111] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for predicting the rate of high-temperature deposition growth of silicon carbide, characterized in that, The rate prediction method includes: Obtain the source gas system used in high-temperature chemical vapor deposition and establish a chemical kinetic mechanism model; Based on the gas components involved in the chemical kinetic mechanism model, a thermodynamic data and transport database are established; The working conditions are specified and the grid between the gas inlet and the seed crystal surface is divided. Then, the steady-state control equations applicable to impingement flow, spiral flow and chemical component transport are obtained by combining chemical kinetic mechanism model, thermodynamic data and transport database. Iterative calculations are performed until the flow field, temperature field and chemical field calculations converge, and the growth rate of silicon carbide crystals grown by high temperature chemical vapor deposition is obtained.

2. The rate prediction method as described in claim 1, characterized in that, The source gas system includes propane, silane, and hydrogen.

3. The rate prediction method as described in claim 1, characterized in that, The gaseous components include: propane, silane, hydrogen, and gases generated during the reaction.

4. The rate prediction method as described in claim 1, characterized in that, The specified operating conditions include: the composition, flow rate, and temperature of the gas at the reactor inlet; the surface temperature and rotational speed of the rotating seed crystal; the operating pressure; and the straight-line distance from the gas inlet to the seed crystal surface.

5. The rate prediction method as described in claim 1, characterized in that, The steady-state governing equations applicable to impinging flow, helical flow, and chemical component transport include: mass conservation equation, momentum conservation equation, energy conservation equation, gas phase component transport conservation equation, and surface material component transport conservation equation.

6. The rate prediction method as described in claim 1, characterized in that, The calculation convergence includes the following: the calculated residual values ​​of the flow field, temperature field, and chemical field are all less than the target residual.

7. The rate prediction method as described in claim 1, characterized in that, The chemical field includes the one-dimensional distribution of chemical substances along the path from the gas inlet to the seed crystal surface.

8. A device for predicting the rate of high-temperature deposition growth of silicon carbide, characterized in that, The rate prediction device includes: The first module is used to obtain the source gas system used in high-temperature chemical vapor deposition and establish a chemical kinetic mechanism model. The second module is used to establish thermodynamic data and transport databases based on the gas components involved in the chemical kinetic mechanism model; The prediction module is used to divide the grid between the gas inlet and the seed crystal surface based on the specified working conditions. Then, it combines the chemical kinetic mechanism model, thermodynamic data and transport database to solve the steady-state control equation applicable to impingement flow, helical flow and chemical component transport. It is then iterated until the flow field, temperature field and chemical field calculations converge to obtain the growth rate of silicon carbide crystals grown by high-temperature chemical vapor deposition.

9. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to said at least one processor; The memory stores a computer program that can be executed by the at least one processor, which is then executed by the at least one processor to enable the at least one processor to perform the rate prediction method for high-temperature deposition growth of silicon carbide as described in any one of claims 1-7.

10. A computer storage medium, characterized in that, The computer storage medium stores computer-executable instructions, which, when executed by a processor, implement the rate prediction method for high-temperature deposition growth of silicon carbide as described in any one of claims 1-7.

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