Magnetic random access memory data writing method, device and system

Abstract

The magnetic random access memory data writing method provided by the invention comprises the following steps: determining a first writing signal based on to-be-written data, and writing a plurality of magnetic tunnel junctions into first data through the first writing signal; if the to-be-written data contains at least one first type of second data located at at least one end of the to-be-written data, determining a second write-in signal, and writing the magnetic tunnel junction corresponding to the first type of second data as second data through the second write-in signal; and if the to-be-written data contains at least one second type of second data located in the center of the to-be-written data, determining a third write-in signal, and writing the magnetic tunnel junction corresponding to the second type of second data as second data through the third write-in signal to complete data write-in. According to the embodiment of the invention, the specific data is written into one or more target MTJs in the plurality of MTJs on the same spin orbit moment layer through the plurality of writing paths without influencing the data storage state in other MTJs, so that the device cost is reduced, and the storage density is improved.

Description

Technical Field

[0001] This application relates to the field of random access memory, specifically to a method, apparatus, and system for writing data to a magnetic random access memory. Background Technology

[0002] As information storage technology rapidly evolves towards higher density, lower power consumption, and higher reliability, spin-orbit-moment (SOT-MRAM) magnetic random access memory (SRAM) has emerged as a core candidate technology to replace traditional memory devices due to its outstanding advantages such as fast read / write speeds, long erase / write lifetimes, and non-volatility. The core working mechanism of SOT-MRAM involves applying current to the spin-orbit layer, generating a spin-orbit moment through the spin Hall effect, and then controlling the flipping of the free-layer magnetic moment of the magnetic tunnel junction above the spin-orbit layer. This allows for the storage and retrieval of data 0s and 1s through low-resistance and high-resistance states. NAND-SPIN memory devices improve the storage density of SOT-MRAM by integrating multiple magnetic tunnel junctions (MTJs) into the same spin-orbit layer.

[0003] To avoid writing non-target MTJs, traditional NAND-SPIN memory devices require writing operations to be performed sequentially from the most significant bit to the least significant bit. On the other hand, the least significant bit MTJ is repeatedly overwritten during the writing process of the most significant bit MTJ, resulting in a large number of redundant writing steps. Furthermore, in order to achieve individual writing of a single MTJ, the width of the spin orbital moment layer needs to be increased proportionally, which in turn increases the threshold flip current of the MTJ proportionally. This leads to increased device manufacturing costs, larger device size, increased operational complexity, and persistently high average write power consumption. Summary of the Invention

[0004] To address at least one of the problems existing in the prior art, this application provides a magnetic random access memory (MRM) data writing method, apparatus, and system. This method uses multiple writing paths to write specific data to one or more target MTJs among multiple MTJs on the same spin orbital moment layer without affecting the data storage status in other MTJs, thereby reducing device costs and increasing storage density.

[0005] A first aspect of this application provides a method for writing data to a magnetic random access memory (MRM), the MRM comprising a spin-orbit space and a plurality of magnetic tunnel junctions disposed on the spin-orbit space, the method comprising: A first write signal is determined based on the data to be written, and the plurality of magnetic tunnel junctions are written as first data using the first write signal; If the data to be written contains at least one first type of second data located at at least one end thereof, a second write signal is determined, and the magnetic tunnel junction corresponding to the first type of second data is written as second data through the second write signal; If the data to be written contains at least one type of second data located in its center, a third write signal is determined, and the magnetic tunnel junction corresponding to the second type of second data is written as second data through the third write signal, thus completing the data writing.

[0006] Optionally, the first write signal is a spin-orbit moment write current, the second write signal is a spin-orbit moment write current or a spin-transfer moment write current, and the third write signal is a spin-orbit moment write current.

[0007] Optionally, determining the first write signal based on the data to be written includes: The target write rule is determined from the preset write rules based on the data distribution of the data to be written; Based on the target writing rule, the value of the first data is determined to be 0 or 1; The magnitude and direction of the first written signal are determined based on the value of the first data.

[0008] Optionally, the first write signal for determining the spin-orbit moment write based on the data to be written includes: Based on the data distribution of the data to be written, determine the writing time required when the value of the first data is 0 and 1 respectively; Choose the value with the shorter write time as the target value for the first data; The signal magnitude and direction of the first write signal are determined based on the target value of the first data.

[0009] Optionally, writing the plurality of magnetic tunneling junctions into first data via the first write signal includes: The first write signal is input to the spin orbital moment layer to write the data stored in the plurality of magnetic tunnel junctions as first data, wherein the signal value of the first write signal is greater than the critical reversal current of the magnetic moment reversal of the free layer of the plurality of magnetic tunnel junctions.

[0010] Optionally, the second write signal is a spin-orbit moment write current, and writing the magnetic tunneling junction corresponding to the first type of second data into second data via the second write signal includes: The magnetic tunnel junction adjacent to at least one of the first type of second data near one end of the spin orbital moment layer is set as the target magnetic tunnel junction. The second write signal is input from the path formed by the top of the target magnetic tunnel junction and one end of the spin-orbit moment layer to write the data stored in the magnetic tunnel junction corresponding to the first type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin-orbit moment is written and less than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin-transfer moment is written. or, The second write signal is a spin-transfer torque write current, and the step of writing the magnetic tunneling junction corresponding to the first type of second data into second data through the second write signal includes: The magnetic tunnel junction near the center of the spin orbit moment layer is set as the target magnetic tunnel junction among at least one magnetic tunnel junction corresponding to the first type of second data near one end of the spin orbit moment layer. The second write signal is input through the path formed by the top of the target magnetic tunnel junction and one end of the spin orbital moment layer to write the data stored in the magnetic tunnel junction corresponding to the first type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin-transfer torque is written.

[0011] Optionally, the third write signal is a spin-orbit moment write current, and writing the magnetic tunneling junction corresponding to the second type of second data into second data through the third write signal includes: Set the two adjacent magnetic tunnel junctions on both sides of at least one magnetic tunnel junction corresponding to the second type of second data as the target magnetic tunnel junction; The third write signal is input from the path formed at the top of the two target magnetic tunnel junctions to write the data stored in the magnetic tunnel junction corresponding to the second type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic tunnel junction free layer magnetic moment flip when the spin orbital moment is written and less than the critical flip current of the magnetic tunnel junction free layer magnetic moment flip when the spin displacement moment is written.

[0012] Optional, also includes: If the data stored in the plurality of magnetic tunnel junctions is known data, the input of the second write current and / or the third write current is determined based on the known data and the data to be written.

[0013] A second aspect of this application discloses a magnetic random access memory (MRM) data writing device, the MRM including a spin-orbit moment layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit moment layer, the device comprising: The first write control module is used to determine a first write signal based on the data to be written, and to write the plurality of magnetic tunnel junctions into first data through the first write signal; The second write control module is used to determine a second write signal if the data to be written contains at least one first type of second data located at at least one end thereof, and to write the magnetic tunnel junction corresponding to the first type of second data as second data through the second write signal; The third write control module is used to determine a third write signal if the data to be written contains at least one second type of second data located in its center, and input the third write signal through the magnetic tunnel junctions adjacent to both sides of the second type of second data to write the magnetic tunnel junction corresponding to the second type of second data as the second data, thereby completing the data writing.

[0014] A third aspect of this application provides a magnetic random access memory (MRM) data writing system, comprising a MRM data writing device and a MRM as described above, wherein the MRM includes a spin-orbit moment layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit moment layer.

[0015] Optionally, it also includes a write control line, a first write line, a second write line, a first switching element electrically connected to one end of the spin orbital matrix, a second switching element electrically connected to the top of each magnetic tunnel junction, and a third write line electrically connected to each second switching element. The write control line is electrically connected to the control terminals of the first switch and the second switch, the first write line is electrically connected to the other end of the first switch, and the second write line is electrically connected to the other end of the spin orbital matrix. The first write signal is input through the path formed by the first write line and the second write line; The second write signal is input through the path formed by the third write line and the first write line or the third write line and the second write line; The third write signal is input through the path formed by the two third write lines.

[0016] As can be seen from the above technical solution, this application writes specific data to one or more target MTJs among multiple MTJs on the same spin-orbit moment layer through multiple write paths without affecting the data storage status in other MTJs. Multi-bit data writing is achieved without changing the width of the spin-orbit moment layer, etc. All MTJs share a spin-orbit moment layer of uniform size. Since there is no need to adjust the write window through differences in the width of the spin-orbit moment layer, multiple MTJs in this application share a spin-orbit moment layer of the same width and structure. The layout size of the storage cell is determined only by the number of MTJs and the minimum process size of a single MTJ, rather than by the maximum width of the spin-orbit moment layer. Furthermore, this application directly writes targeted data based on the position of the second data, either at the end or the center, without following a fixed order. It can write second data at different positions simultaneously or in stages, eliminating the problem of low-order MTJs being repeatedly overwritten. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a front and top view comparison diagram of a traditional NAND-SPIN cell structure.

[0019] Figure 2 This is a flowchart illustrating a magnetic random access memory (MRM) data writing method according to this application.

[0020] Figure 3(a) is a front and top view comparison of the two-bit magnetic random access memory of this application.

[0021] Figure 3(b) is a front and top view comparison of the four-bit magnetic random access memory of this application.

[0022] Figure 4(a) is a schematic diagram of the 0-MTJ write operation of the two-bit magnetic random access memory of this application.

[0023] Figure 4(b) is a schematic diagram of the 1-MTJ write operation of the two-bit magnetic random access memory of this application.

[0024] Figure 5 This is a schematic diagram of the write operation of the four-bit magnetic random access memory of this application.

[0025] Figure 6 This is a schematic diagram of the entire process of writing operations to the 0-MTJ, 1-MTJ, and 2-MTJ of the four-bit magnetic random access memory of this application.

[0026] Figure reference numerals: 1 is the MTJ pinned layer; 2 is the MTJ oxide layer; 3 is the MTJ free layer; 4 is the MTJ spin-orbit moment layer. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0029] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0030] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if detected [the described condition or event]" may be interpreted, depending on the context, as meaning "once determined," "in response to determination," "once detected [the described condition or event]," or "in response to detection [the described condition or event]."

[0031] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0032] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0033] Traditional writing methods require that write operations must proceed sequentially from the most significant bit to the least significant bit, and each write operation must begin with an initialization operation, pre-writing the same data (e.g., 0000 or 1111) to all MTJs within the same cell. This requires a write current greater than the maximum toggle current among all MTJs. Figure 1 As shown, for a 4-bit NAND-SPIN memory cell, the four MTJs within the same cell share a single spin-orbit layer 4. Assume the width of the smallest spin-orbit layer 4 within the cell is W. HM Then the maximum spin orbital moment layer 4 width needs to reach K 3 *WHM Increasing the width of the spin orbital moment layer 4 significantly increases the layout size and drastically reduces storage density. Furthermore, traditional write schemes require write operations to proceed sequentially from the most significant bit to the least significant bit. Each write operation begins with an initialization operation, pre-writing the same data (e.g., 0000 or 1111) to all MTJs within the same cell. Therefore, the write current needs to be greater than the maximum flip current among the four MTJs. Assuming the minimum MTJ flip current is I... C The maximum reversing current reaches K. 3 *I C Specifically, if the data 0101 is written, the operation steps are as follows: In the first cycle, apply a positive force with an amplitude of K. 3 The SOT current of Ic writes data 0 to MTJ1~MTJ4; in the second write cycle, a negative current with an amplitude of K is applied. 2 In the first write cycle, a positive SOT current of magnitude Ic is applied to write data 1 to MTJ2~MTJ4; in the second write cycle, a positive SOT current of magnitude KIc is applied to write data 0 to MTJ3~MTJ4; in the third write cycle, a negative SOT current of magnitude Ic is applied to write data 1 to MTJ4. Furthermore, the traditional write method is very complex in writing data to a specific location, requiring different current magnitudes to be applied in multiple cycles to cover all situations. This traditional operating mode significantly increases operational complexity, resulting in an exponential increase in overall write power consumption.

[0034] Based on this, in order to solve the above problems, this application provides a magnetic random access memory (MRMemory) data writing method, wherein the MRMemory includes a spin-orbit moment layer 4 and a plurality of magnetic tunnel junctions disposed on the spin-orbit moment layer 4, such as... Figure 2 As shown, the method includes: S101, determine a first write signal based on the data to be written, and write the plurality of magnetic tunnel junctions into first data through the first write signal; S102, if the data to be written contains at least one first type of second data located at at least one end thereof, determine a second write signal, and write the magnetic tunnel junction corresponding to the first type of second data as second data through the second write signal; S103, if the data to be written contains at least one second type of second data located in its center, a third write signal is determined, and the magnetic tunnel junction corresponding to the second type of second data is written as second data through the third write signal to complete the data writing.

[0035] It should be noted that Figures 3(a) and 3(b) are front and top views of two-bit and four-bit magnetic random access memory, respectively. Compared with traditional NAND-SPIN, the NAND-SPIN magnetic random access memory designed in this application does not require the setting of spin orbital matrix layers 4 with different widths. Multiple MTJs share the same width and the same structure of spin orbital matrix layer 4. The layout size of the memory cell is determined only by the number of MTJs and the minimum process size of a single MTJ.

[0036] It should be noted that when current flows through the spin orbital moment layer 4, it generates a spin orbital moment through the spin Hall effect, thereby controlling the magnetic moment state of the upper magnetic tunnel junction and realizing data writing. The magnetic tunnel junction (MTJ) is the core storage unit of the magnetic random access memory, consisting of a pinned layer 1, an oxide layer 2, and a free layer 3. The magnetization direction of the pinned layer 1 is fixed, while the magnetization direction of the free layer 3 is controlled by an external signal. Depending on whether the free layer 3 is parallel or antiparallel to the magnetization direction of the pinned layer 1, it exhibits a low-resistance state or a high-resistance state, corresponding to data 0 or 1, respectively.

[0037] It should be noted that the first data described in this application is unified data written to multiple magnetic tunnel junctions during the initialization process, and its value is 0 or 1, specifically determined by the distribution characteristics of the data to be written; the second data is the opposite of the first data, that is, when the first data is 0, the second data is 1, and when the first data is 1, the second data is 0. The first type of second data is the second data located at at least one end of the data to be written, where the end refers to the data bit to be written corresponding to the two ends of the sequence formed by multiple magnetic tunnel junctions arranged in order; the second type of second data is the second data located in the center of the data to be written, where the center refers to the data bit to be written corresponding to the non-two ends of the sequence formed by multiple magnetic tunnel junctions arranged in order; the first write signal is a signal used to uniformly write multiple magnetic tunnel junctions as the first data, and its type, size, and direction are determined according to the value of the first data and the characteristics of the magnetic tunnel junctions; the second write signal is a signal used to write the magnetic tunnel junction corresponding to the first type of second data as the second data, and its type needs to be adapted to the writing requirements of the end magnetic tunnel junctions; the third write signal is a signal used to write the magnetic tunnel junction corresponding to the second type of second data as the second data, and its type needs to be adapted to the writing requirements of the central magnetic tunnel junction.

[0038] For example, the 2-bit NAND-SPIN is divided into two write operations: 0-MTJ and 1-MTJ. As shown in Figure 4(a), the 0-MTJ write operation means that when performing the write operation, the word line WL is activated, transistors N1, N2, and N3 are turned on, and a high voltage VH or a low voltage VL is applied to the bit line WBL or the source line SL. The other ports are not activated. The write current flows from the bit line or source line with the high voltage VH applied through the spin orbital layer 4 and finally flows into the bit line or source line with the low voltage VL applied. As shown in Figure 4(b), the 1-MTJ write operation means that when performing the write operation, the word line WL is activated, transistors N1, N2, and N3 are turned on, and a high voltage VH or a low voltage VL is applied to one of the bit lines RBL[0] and RBL[1]. A high voltage VH or a low voltage VL is applied to one of the bit lines WBL and the source line SL. The other ports are not activated. Depending on the type of data being written, the write current flows from the bit line or source line where a high voltage VH is applied into the MTJ, through the spin orbital moment layer 4, and finally into one of the bit lines or source lines where a low voltage VL is applied.

[0039] Based on the type of data to be written, the target data can be classified into single-cycle write data 00, 11 and dual-cycle write data 01, 10.

[0040] For writing data 00 and 11 in a single cycle, the 0-MTJ operation needs to be performed in the first cycle. The specific operation process is as follows: If data 00 is to be written, WL is activated, N1, N2, and N3 transistors are turned on, a high voltage VH is applied to SL, a low voltage VL is applied to WBL, RBL[0] and RBL[1] are not activated, and a write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of SL and WBL. The write current path is: SL-spin orbital layer 4 below all MTJs-WBL; If data 11 is to be written, WL is activated, N1, N2, and N3 transistors are turned on, a high voltage VH is applied to WBL, a low voltage VL is applied to SL, RBL[0] and RBL[1] are not activated, and a write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of WBL and SL. The write current path is: WBL-spin orbital layer 4 below all MTJs-SL.

[0041] For writing data 01 and 10 in two cycles, it is necessary to continue the 1-MTJ operation on the basis of initializing the data 00 in the first cycle. The specific operation process is as follows: If data 01 is to be written, WL is activated, N1, N2 and N3 transistors are turned on, a high voltage VH is applied to RBL[0], a low voltage VL is applied to SL, WBL and RBL[1] are not activated, and a write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of RBL[0] and SL. The write current path is: RBL[0]-MTJ1-MTJ2 lower spin orbital layer 4-SL; If data 10 is to be written, WL is activated, N1, N2 and N3 transistors are turned on, a high voltage VH is applied to WBL, a low voltage VL is applied to RBL[1], SL and RBL[0] are not activated, and a write current greater than the SOT threshold flip current ISOT is applied at both ends of WBL and RBL[1]. The write current path is: WBL-MTJ1 lower spin orbital layer 4-MTJ2-RBL[1].

[0042] For example, a 4-bit NAND-SPIN can be divided into three write operations: 0-MTJ, 1-MTJ, and 2-MTJ. Figure 5 As shown, a 0-MTJ write operation means that during the write operation, the word line WL is activated, transistors N1, N2, N3, N4, and N5 are turned on, and a high voltage VH or a low voltage VL is applied to the bit line WBL or the source line SL. The other ports are not activated. The write current flows in from the bit line or source line with the applied high voltage VH, flows through the spin-orbit moment layer 4 below all MTJs, and finally flows into the bit line or source line with the applied low voltage VL; as shown... Figure 5 As shown, the 1-MTJ write operation represents the activation of word line WL, the activation of transistors N1, N2, N3, N4, and N5, the application of a high voltage VH or a low voltage VL to one of the bit lines RBL[0], RBL[1], RBL[2], and RBL[3], and the application of a high voltage VH or a low voltage VL to one of the bit lines WBL or the source line SL. The remaining ports are not activated. Depending on the type of data being written, the write current flows from the bit line or source line with the high voltage VH applied into the MTJ, flows through the spin orbital moment layer 4, and finally flows into one of the bit lines or source lines with the low voltage VL applied. Figure 5 As shown, the 2-MTJ write operation means that during the write operation, the word line WL is activated, transistors N1, N2, N3, N4, and N5 are turned on, and two of the bit lines RBL[0], RBL[1], RBL[2], and RBL[3] are respectively given a high voltage VH or a low voltage VL, while the other ports are not activated. Depending on the type of data being written, the write current flows sequentially from the bit line with the high voltage VH into MTJ, spin orbital layer 4, and finally into the bit line with the low voltage VL.

[0043] like Figure 6As shown, based on the type of data to be written, the target data can be classified into single-cycle write data 0000, 1111, double-cycle write data 1110, 1100, 1000, 0111, 0011, 0001, 0100, 0010, 0110, and triple-cycle write data 1101, 1001, 1011, 1010, 0101.

[0044] For writing data 0000 and 1111 in a single cycle, a 0-MTJ operation needs to be performed in the first cycle. The specific operation process is as follows: If data 0000 is to be written, WL is activated, transistors N1, N2, N3, N4, and N5 are turned on, a high voltage VH is applied to SL, a low voltage VL is applied to WBL, and RBL[0], RBL[1], RBL[2], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of SL and WBL. The write current path is: SL-spin orbital moment layer 4 below all MTJs-WBL; If data 1111 is to be written, WL is activated, transistors N1, N2, N3, N4, and N5 are turned on, a high voltage VH is applied to WBL, a low voltage VL is applied to SL, and RBL[0], RBL[1], RBL[2], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of WBL and SL. The write current path is: WBL - all spin orbital moment layers 4 below MTJ - SL.

[0045] For the dual-cycle write data 1110, 1100, 1000, 0111, 0011, 0001, it is necessary to continue the 1-MTJ operation based on the initialization of the write data 0000 in the first cycle. If the data 1110 is to be written, WL is activated in the second cycle, a high voltage VH is applied to WBL, a low voltage VL is applied to RBL[3], and SL, RBL[0], RBL[1], and RBL[2] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied at both ends of WBL and RBL[3]. The write current path is: WBL-MTJ1, MTJ2, MTJ3 spin orbital moment layer 4-MTJ4-RBL[3]. If the data 1100 is to be written, WL is activated in the second cycle, a high voltage VH is applied to WBL, a low voltage VL is applied to RBL[2], and SL, RBL[0], RBL[1], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied to both ends of WBL and RBL[2]. The write current path is: WBL-MTJ1, MTJ2 spin orbital layer 4-MTJ3-RBL[2]. If the data 1000 is to be written, WL is activated in the second cycle, a high voltage VH is applied to WBL, a low voltage VL is applied to RBL[1], and SL, RBL[0], RBL[2], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied to both ends of WBL and RBL[1]. The write current path is: WBL-MTJ1 spin orbital layer 4-MTJ2-RBL[1]. If the data 0111 is to be written, WL is activated in the second cycle, a high voltage VH is applied to RBL[0], a low voltage VL is applied to SL, and WBL, RBL[1], RBL[2], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied across RBL[0] and SL. The write current path is: RBL[0]-MTJ2, MTJ3, MTJ4 spin orbital layer 4-SL below. If data 0011 is to be written, WL is activated in the second cycle, a high voltage VH is applied to RBL[1], and a low voltage VL is applied to SL. WBL, RBL[0], RBL[2], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied across RBL[1] and SL. The write current path is: RBL[1]-MTJ2, MTJ3, MTJ4 spin orbital layer 4-SL below. If data 0001 is to be written, WL is activated in the second cycle, a high voltage VH is applied to RBL[2], and a low voltage VL is applied to SL. WBL, RBL[0], RBL[1], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of RBL[2] and SL. The write current path is: RBL[2]-MTJ3-MTJ4 spin orbital layer 4-SL below.

[0046] For the remaining two-cycle write data 0100, 0010, and 0110, the 2-MTJ operation needs to be performed after initializing the write data 0000 in the first cycle. If data 0100 is to be written, WL is activated in the second cycle, a high voltage VH is applied to RBL[0], a low voltage VL is applied to RBL[2], and WBL, SL, RBL[1], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of RBL[0] and RBL[2]. The write current path is: RBL[0]-MTJ1, the spin orbital moment layer 4 below MTJ2, MTJ3-RBL[2]. If data 0010 is to be written, WL is activated in the second cycle, a high voltage VH is applied to RBL[1], a low voltage VL is applied to RBL[3], and WBL, SL, RBL[0], and RBL[2] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied across RBL[1] and RBL[3]. The write current path is: RBL[1]-MTJ2, the spin orbital layer 4 below MTJ3, MTJ4-RBL[3]. If the data 0110 is to be written, WL is activated in the second cycle, a high voltage VH is applied to RBL[0], a low voltage VL is applied to RBL[3], and WBL, SL, RBL[1], and RBL[2] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied across RBL[0] and RBL[3]. The write current path is: RBL[0]-MTJ1, MTJ2, the spin orbital layer 4 below MTJ3, MTJ4-RBL[3].

[0047] For writing data 1101, 1001, and 1011 in three cycles, it is necessary to continue the 1-MTJ operation based on the data written in the second cycle. The specific operation process is as follows: If data 1101 is to be written, it is necessary to activate WL in the third cycle based on the data 1100 written in the second cycle, apply a high voltage VH to RBL[2], apply a low voltage VL to SL, and WBL, RBL[0], RBL[1], and RBL[3] are not activated. Apply a write current with an amplitude greater than the SOT threshold flip current ISOT at both ends of RBL[2] and SL. The write current path is: RBL[2]-MTJ3-MTJ4 spin orbital moment layer 4-SL below; If data 1001 is to be written, it is necessary to activate WL in the third cycle based on the data 1000 written in the second cycle, apply a high voltage VH to RBL[2], apply a low voltage VL to SL, and WBL, RBL[0], RBL[1], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied to both ends of RBL[2] and SL. The write current path is: RBL[2]-MTJ3-MTJ4 spin orbital layer 4-SL. If data 1011 is to be written, WL needs to be activated in the third cycle based on the data 0011 written in the second cycle. A high voltage VH is applied to WBL, and a low voltage VL is applied to RBL[1]. SL, RBL[0], RBL[2], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold switching current ISOT is applied to both ends of WBL and RBL[1]. The write current path is: WBL-MTJ1 spin orbital layer 4-MTJ2-RBL[1].

[0048] For the remaining three cycles of writing data 1010 and 0101, the 2-MTJ operation needs to be performed on the basis of writing data in the second cycle. The specific operation process is as follows: If data 1010 is to be written, WL needs to be activated in the third cycle on the basis of writing data 1000 in the second cycle. A high voltage VH is applied to RBL[1] and a low voltage VL is applied to RBL[3]. WBL, SL, RBL[0], and RBL[2] are not activated. A write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of RBL[1] and RBL[3]. The write current path is: RBL[1]-MTJ2-MTJ3 spin orbital moment layer 4-MTJ4-RBL[3]. If data 0101 is to be written, WL needs to be activated in the third cycle on the basis of writing data 0001 in the second cycle. A high voltage VH is applied to RBL[0] and a low voltage VL is applied to RBL[2]. WBL, SL, RBL[1], and RBL[3] are not activated. A write current with an amplitude greater than the SOT threshold flip current ISOT is applied at both ends of RBL[0] and RBL[2]. The write current path is: RBL[0]-MTJ1-MTJ2 lower spin orbital moment layer 4-MTJ3-RBL[2].

[0049] This application uses multiple write paths to write specific data to one or more target MTJs among multiple MTJs on the same spin-orbit matrix layer 4 without affecting the data storage status of other MTJs. It does not require changing the width of the spin-orbit matrix layer 4, and all MTJs share a uniformly sized spin-orbit matrix layer 4. Since there is no need to adjust the write window based on the width difference of the spin-orbit matrix layer 4, multiple MTJs in this application share the same width and structure of the spin-orbit matrix layer 4. The layout size of the memory cell is determined only by the number of MTJs and the minimum process size of a single MTJ, rather than by the maximum width of the spin-orbit matrix layer 4, reducing device cost and increasing storage density. Furthermore, this application directly writes to the second data based on its location—either at the end or center—without following a fixed order. It can write second data at different locations simultaneously or in stages, eliminating the problem of low-order MTJs being repeatedly overwritten.

[0050] In one embodiment of this application, the first write signal is a spin-orbit torque write current, the second write signal is a spin-orbit torque write current or a spin-transfer torque write current, and the third write signal is a spin-orbit torque write current.

[0051] It should be noted that the spin orbital moment (SOT) writing current is the current flowing through the spin orbital moment layer 4, which generates a spin orbital moment through the spin Hall effect, thereby controlling the magnetic moment reversal of the free layer 3 of the magnetic tunnel junction to achieve data writing; the spin transfer torque (STT) writing current is the current flowing directly through the magnetic tunnel junction, which uses the momentum transfer effect of the spin polarized electrons carried by the current to control the magnetic moment reversal of the free layer 3 of the magnetic tunnel junction to achieve data writing.

[0052] For example, a storage cell of a magnetic random access memory contains three magnetic tunnel junctions. The data to be written is 101. First, a spin-orbit torque write current is used as the first write signal to write all three magnetic tunnel junctions to the first data 0. The first type of second data located at the ends of the data to be written is 1 in the first and third bits. In one case, a spin-transfer torque write current is selected as the second write signal. The spin-transfer torque second write signal is written from the top of the magnetic tunnel junction corresponding to the first and third bits and one end of the nearby spin-orbit torque layer 4, respectively, to write the first and third bits to 1, thus completing the writing of data 101. In another scenario, the second write signal selects the spin-orbit moment write current for writing. The second write signal of the spin-orbit moment is input at the top of the magnetic tunnel junction corresponding to the second position and at one end of the spin-orbit moment layer 4 near the magnetic tunnel junction corresponding to the first position, writing the magnetic tunnel junction corresponding to the first position as data 1. Similarly, the second write signal of the spin-orbit moment is input at the top of the magnetic tunnel junction corresponding to the second position and at one end of the spin-orbit moment layer 4 near the magnetic tunnel junction corresponding to the third position, writing the magnetic tunnel junction corresponding to the third position as data 1, thus completing the writing of data 101.

[0053] In one embodiment that can be implemented in this application, determining the first write signal based on the data to be written includes: The target write rule is determined from the preset write rules based on the data distribution of the data to be written; Based on the target writing rule, the value of the first data is determined to be 0 or 1; The magnitude and direction of the first written signal are determined based on the value of the first data.

[0054] Specifically, for writing multiple bits of data, write rules can be pre-set to determine the optimal writing method for different data. After identifying the data to be written, the preset write rules can be found, and the write operation can be directly executed according to the writing method specified in the rules, eliminating the need for data analysis and processing and improving writing efficiency. In a specific example, such as... Figure 6As shown, when the memory contains 4 magnetic tunnel junctions, the writing methods for all 4-bit data can be preset in advance. For example, for the writing method corresponding to the preset writing rule of 1101, it can include first writing 0000, then writing 1100, and finally writing multiple fixed writing steps to obtain 1101. Of course, in practical applications, those skilled in the art can preset the writing rules according to the actual situation, and this application does not limit this.

[0055] Exemplarily, when setting the writing rule, it can be executed in the following manner: Assume the data to be written is 00100, and its data distribution feature is that the proportion of the number of 0s is much larger than the proportion of the number of 1s. According to the preset writing rule, when the proportion of the number of 0s is greater than the proportion of the number of 1s, the first data is determined to be 0. Based on the first data 0, combined with the characteristic of the magnetization reversal of the free layer 3 of the magnetic tunnel junction, the magnitude of the first writing signal (spin-orbit torque writing current) is determined to be a value just enough to flip the magnetization of all free layers 3 of the magnetic tunnel junctions to a state parallel to the pinned layer 1, and the direction is the direction capable of generating the corresponding spin-orbit torque, and then all magnetic tunnel junctions are written as 0 through this first writing signal.

[0056] In an embodiment that can be implemented in this application, the first writing signal for spin-orbit torque writing based on the data to be written includes: Determine the writing times required when the value of the first data is 0 and 1 respectively based on the data distribution of the data to be written; Select the value with less writing time as the target value of the first data; Determine the signal magnitude and direction of the first writing signal based on the target value of the first data.

[0057] It should be noted that the writing time is the total time required for the data to be written to be written through at least one writing when the first data is 0 or 1. In this implementation manner, when the target value of the first data can be 0 or 1, the value with a shorter writing time is selected as the first data to improve the writing efficiency.

[0058] Before writing the data, analyze the data to be written, and evaluate that when the first data is 0, the writing time required to write all magnetic tunnel junctions as the data to be written is t1, and when the first data is 1, the required writing time is t2. Select the value corresponding to the shorter time between t1 and t2 as the first data to improve the writing efficiency, that is, if t1 < t2, select 0 as the target value of the first data.

[0059] Exemplarily, with Figure 6Taking the example of 1111, if the first data is 0, it needs to be written as 0000 first and then the data in all positions needs to be rewritten as 1111, which requires two write operations. If the first data is 1, it only needs to be written as 1111 once and does not need to be rewritten, which only requires one write operation. This application determines 0000, which has a shorter write time, as the target value of the first data based on the distribution of the data to be written (0 or 1).

[0060] In one embodiment that can be implemented in this application, writing the plurality of magnetic tunnel junctions into first data via the first write signal includes: The first write signal is input to the spin orbital moment layer 4 to write the data stored in the plurality of magnetic tunnel junctions as first data, and the signal value of the first write signal is greater than the critical reversal current of the magnetic moment reversal of the free layer 3 of the plurality of magnetic tunnel junctions.

[0061] For example, the first write signal is input to the spin orbit moment layer 4. The current generates a spin orbit moment in the spin orbit moment layer 4. At the same time, the signal value of the current is greater than the critical flip current for the magnetic moments of the free layers 3 of all magnetic tunnel junctions in the storage cell to flip synchronously to the state corresponding to the first data, thus completing the initialization operation.

[0062] In one embodiment of this application, the second write signal is a spin-orbit moment write current, and writing the magnetic tunneling junction corresponding to the first type of second data into second data via the second write signal includes: The magnetic tunnel junction adjacent to at least one of the first type of second data corresponding to the magnetic tunnel junction near one end of the spin orbital moment layer 4 is set as the target magnetic tunnel junction. The second write signal is input from the path formed by the top of the target magnetic tunnel junction and one end of the spin orbit moment layer 4 to write the data stored in the magnetic tunnel junction corresponding to the first type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer 3 of the magnetic tunnel junction when the spin orbit moment is written and less than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin displacement moment is written. or, The second write signal is a spin-transfer torque write current, and the step of writing the magnetic tunneling junction corresponding to the first type of second data into second data through the second write signal includes: The magnetic tunnel junction closest to the center of the spin orbital moment layer 4 is set as the target magnetic tunnel junction among at least one magnetic tunnel junction corresponding to the first type of second data near one end of the spin orbital moment layer 4. The second write signal is input from the path formed by the top of the target magnetic tunnel junction and one end of the spin orbital moment layer 4 to write the data stored in the magnetic tunnel junction corresponding to the first type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer 3 of the magnetic tunnel junction when the spin shift torque is written.

[0063] It should be noted that the target magnetic tunnel junction is the magnetic tunnel junction selected to form the transmission path of the second write signal, and its position is adjacent to the magnetic tunnel junction corresponding to the first type of second data; the top of the magnetic tunnel junction is the end of the magnetic tunnel junction away from the spin orbital layer 4, which is usually electrically connected to the write line or switching element; one end of the spin orbital layer 4 is one end of the spin orbital layer 4, which is used to access the write signal and form a transmission path with the top of the target magnetic tunnel junction.

[0064] For example, assuming the magnetic tunnel junction corresponding to the second data of the first type is the first magnetic tunnel junction, when the second write signal is the spin-orbit moment write current, the second magnetic tunnel junction adjacent to the first magnetic tunnel junction is selected as the target magnetic tunnel junction. A transmission path is formed from the top of the second magnetic tunnel junction and one end of the spin-orbit moment layer 4. The input signal value is greater than the second write signal of the spin-orbit moment write critical flip current and less than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction during spin-transfer moment write. The first magnetic tunnel junction is written as the second data without affecting the resistance state of the second magnetic tunnel junction. When the second write signal is the spin-transfer moment write current, the magnetic tunnel junction corresponding to the position near the center of the spin-orbit moment layer 4 among the multiple magnetic tunnel junctions to be written is selected as the target magnetic tunnel junction, i.e., the first magnetic tunnel junction. A path is formed from the top of the target magnetic tunnel junction and one end of the nearby spin-orbit moment layer 4. The input signal value is greater than the second write signal of the spin-transfer moment write critical flip current, and the writing of the first magnetic tunnel junction is completed.

[0065] In one embodiment of this application, the third write signal is a spin-orbit moment write current, and writing the magnetic tunneling junction corresponding to the second type of second data into second data via the third write signal includes: Set the two adjacent magnetic tunnel junctions on both sides of at least one magnetic tunnel junction corresponding to the second type of second data as the target magnetic tunnel junction; The third write signal is input from the path formed at the top of the two target magnetic tunnel junctions to write the data stored in the magnetic tunnel junction corresponding to the second type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer 3 of the magnetic tunnel junction when the spin orbital moment is written and less than the critical flip current of the magnetic moment flip of the free layer 3 of the magnetic tunnel junction when the spin displacement moment is written.

[0066] For example, assuming the magnetic tunnel junction corresponding to the second type of second data is the third magnetic tunnel junction, located in the center of the four magnetic tunnel junctions, the second and fourth magnetic tunnel junctions adjacent to it on both sides are selected as the target magnetic tunnel junctions. A transmission path is formed from the top of the second and fourth magnetic tunnel junctions, and a third write signal, namely the spin-orbit torque write current, is input. The signal value of this signal is greater than the critical flip current of the third magnetic tunnel junction when writing the spin-orbit torque, and less than the critical flip current when writing the spin-torque torque. The third magnetic tunnel junction is written as the second data through this signal, while avoiding interference with the second and fourth magnetic tunnel junctions.

[0067] In one embodiment that can be implemented in this application, the method further includes: If the data stored in the plurality of magnetic tunnel junctions is known data, the input of the second write current and / or the third write current is determined based on the known data and the data to be written.

[0068] For example, it is known that multiple magnetic tunnel junctions currently store data as 0000, and the data to be written is 0101. By comparing the known data and the data to be written, the magnetic tunnel junctions that need to be rewritten to the second data 1 are identified as the 2nd and 4th bits. Based on the positions of these two magnetic tunnel junctions, the 2nd bit is the central position and the 4th bit is the end position, the third write current and the second write current are determined respectively, and the 2nd and 4th bits of the magnetic tunnel junction are written to 1 using the corresponding write method, completing the data update without performing an initialization operation.

[0069] A second aspect of this application discloses a magnetic random access memory (MRM) data writing device, the MRM including a spin-orbit moment layer 4 and a plurality of magnetic tunnel junctions disposed on the spin-orbit moment layer 4, the device comprising: The first write control module is used to determine a first write signal based on the data to be written, and to write the plurality of magnetic tunnel junctions into first data through the first write signal; The second write control module is used to determine a second write signal if the data to be written contains at least one first type of second data located at at least one end thereof, and to write the magnetic tunnel junction corresponding to the first type of second data as second data through the second write signal; The third write control module is used to determine a third write signal if the data to be written contains at least one second type of second data located in its center, and input the third write signal through the magnetic tunnel junctions adjacent to both sides of the second type of second data to write the magnetic tunnel junction corresponding to the second type of second data as the second data, thereby completing the data writing.

[0070] A third aspect of this application proposes a magnetic random access memory (MRM) data writing system, including the aforementioned MRM data writing device and the MRM, wherein the MRM includes a spin-orbit moment layer 4 and a plurality of magnetic tunnel junctions disposed on the spin-orbit moment layer 4.

[0071] In one embodiment that can be implemented in this application, it further includes a write control line, a first write line, a second write line, a first switching element electrically connected to one end of the spin orbital matrix 4, a second switching element electrically connected to the top of each magnetic tunnel junction, and a third write line electrically connected to each second switching element. The write control line is electrically connected to the control terminals of the first switch and the second switch, the first write line is electrically connected to the other end of the first switch, and the second write line is electrically connected to the other end of the spin orbital matrix 4. The first write signal is input through the path formed by the first write line and the second write line; The second write signal is input through the path formed by the third write line and the first write line or the third write line and the second write line; The third write signal is input through the path formed by the two third write lines.

[0072] For example, as shown in Figure 3, for a 4-bit NAND-SPIN, four MTJs share the same metal layer, where 1 is the MTJ pinning layer, 2 is the MTJ oxide layer, 3 is the MTJ free layer, and 4 is the MTJ spin orbital layer 4. The cell contains five bit lines: WBL, RBL[0:3], one source line SL, five transistors N1-N5 that control the write path, and a word line WL that controls the switching of the five transistors. Transistor N1 has its first end connected to WBL, its second end connected to the first end of spin orbital layer 4, and its control end connected to WL; Transistor N2 has its first end connected to RBL[0], its second end connected to MTJ1, and its control end connected to WL; Transistor N3 has its first end connected to RBL[1], its second end connected to MTJ2, and its control end connected to WL; Transistor N4 has its first end connected to RBL[2], its second end connected to MTJ3, and its control end connected to WL; Transistor N5 has its first end connected to RBL[3], its second end connected to MTJ4, and its control end connected to WL; The second end of spin orbital layer 4 is connected to SL.

[0073] Specific embodiments have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this invention. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A method for writing data to a magnetic random access memory, characterized in that, The magnetic random access memory includes a spin orbital layer and a plurality of magnetic tunnel junctions disposed on the spin orbital layer; the method includes: A first write signal is determined based on the data to be written, and the plurality of magnetic tunnel junctions are written as first data through the first write signal; If the data to be written contains at least one first type of second data located at at least one end thereof, a second write signal is determined, and the magnetic tunnel junction corresponding to the first type of second data is written as second data through the second write signal; If the data to be written contains at least one type of second data located in its center, a third write signal is determined, and the magnetic tunnel junction corresponding to the second type of second data is written as second data through the third write signal, thus completing the data writing.

2. The magnetic random access memory data writing method according to claim 1, characterized in that, The first write signal is a spin-orbit torque write current, the second write signal is a spin-orbit torque write current or a spin-transfer torque write current, and the third write signal is a spin-orbit torque write current.

3. The magnetic random access memory data writing method according to claim 2, characterized in that, The determination of the first write signal based on the data to be written includes: The target write rule is determined from the preset write rules based on the data distribution of the data to be written; Based on the target writing rule, the value of the first data is determined to be 0 or 1; The magnitude and direction of the first written signal are determined based on the value of the first data.

4. The magnetic random access memory data writing method according to claim 2, characterized in that, The first write signal for determining the spin orbital moment write based on the data to be written includes: Based on the data distribution of the data to be written, determine the writing time required when the value of the first data is 0 and 1 respectively; Choose the value with the shorter write time as the target value for the first data; The signal magnitude and direction of the first write signal are determined based on the target value of the first data.

5. The magnetic random access memory data writing method according to claim 1, characterized in that, The second write signal is a spin-orbit moment write current, and the step of writing the magnetic tunneling junction corresponding to the first type of second data into second data through the second write signal includes: The magnetic tunnel junction adjacent to at least one of the first type of second data near one end of the spin orbital moment layer is set as the target magnetic tunnel junction. The second write signal is input from the path formed by the top of the target magnetic tunnel junction and one end of the spin-orbit moment layer to write the data stored in the magnetic tunnel junction corresponding to the first type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin-orbit moment is written and less than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin-transfer moment is written. or, The second write signal is a spin-transfer torque write current, and the step of writing the magnetic tunneling junction corresponding to the first type of second data as second data through the second write signal includes: The magnetic tunnel junction near the center of the spin orbit moment layer is set as the target magnetic tunnel junction among at least one magnetic tunnel junction corresponding to the first type of second data near one end of the spin orbit moment layer. The second write signal is input through the path formed by the top of the target magnetic tunnel junction and one end of the spin orbital moment layer to write the data stored in the magnetic tunnel junction corresponding to the first type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic moment flip of the free layer of the magnetic tunnel junction when the spin-transfer torque is written.

6. The magnetic random access memory data writing method according to claim 1, characterized in that, The third write signal is a spin-orbit moment write current, and writing the magnetic tunneling junction corresponding to the second type of second data into second data using the third write signal includes: Set the two adjacent magnetic tunnel junctions on both sides of at least one magnetic tunnel junction corresponding to the second type of second data as the target magnetic tunnel junction; The third write signal is input from the path formed at the top of the two target magnetic tunnel junctions to write the data stored in the magnetic tunnel junction corresponding to the second type of second data as the second data. The signal value of the second write signal is greater than the critical flip current of the magnetic tunnel junction free layer magnetic moment flip when the spin orbital moment is written and less than the critical flip current of the magnetic tunnel junction free layer magnetic moment flip when the spin displacement moment is written.

7. The magnetic random access memory data writing method according to claim 1, characterized in that, The method further includes: If the data stored in the plurality of magnetic tunnel junctions is known data, the input of the second write current and / or the third write current is determined based on the known data and the data to be written.

8. A magnetic random access memory (MRM) data writing device, characterized in that, The magnetic random access memory includes a spin orbital layer and a plurality of magnetic tunnel junctions disposed on the spin orbital layer. The device includes: The first write control module is used to determine a first write signal based on the data to be written, and to write the plurality of magnetic tunnel junctions into first data through the first write signal; The second write control module is used to determine a second write signal if the data to be written contains at least one first type of second data located at at least one end thereof, and to write the magnetic tunnel junction corresponding to the first type of second data as second data through the second write signal; The third write control module is used to determine a third write signal if the data to be written contains at least one second type of second data located in its center, and input the third write signal through the magnetic tunnel junctions adjacent to both sides of the second type of second data to write the magnetic tunnel junction corresponding to the second type of second data as the second data, thereby completing the data writing.

9. A magnetic random access memory (MRM) data writing system, characterized in that, The magnetic random access memory (MRM) includes the data writing device and the MRM as described in claim 8, wherein the MRM includes a spin-orbit moment layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit moment layer.

10. The magnetic random access memory data writing system according to claim 9, characterized in that, It also includes a write control line, a first write line, a second write line, a first switching element electrically connected to one end of the spin orbital matrix, a second switching element electrically connected to the top of each magnetic tunnel junction, and a third write line electrically connected to each second switching element. The write control line is electrically connected to the control terminals of the first switch and the second switch, the first write line is electrically connected to the other end of the first switch, and the second write line is electrically connected to the other end of the spin orbital matrix. The first write signal is input through the path formed by the first write line and the second write line; The second write signal is input through the path formed by the third write line and the first write line or the third write line and the second write line; The third write signal is input through the path formed by the two third write lines.

Images