Display panel and display device

Abstract

The invention provides a display panel and a display device. In one specific implementation mode, the display panel comprises a display area and a non-display area arranged on the periphery of the display area, and further comprises a driving circuit layer and a light-emitting function layer which are arranged on a substrate in a stacked mode, the light-emitting function layer comprises a plurality of light-emitting units, electrodes, away from the substrate, of the light-emitting units are reflection electrodes, and the electrodes of the light-emitting units are reflection electrodes. The non-display area comprises circuit areas arranged on a first side and a second side which are opposite to each other, the display panel further comprises a light filtering structure composed of a plurality of filtering sub-layers which are arranged in a stacked mode, the light filtering structure is arranged between thin film transistors of the circuit areas and the display area, and the refractive indexes of the adjacent filtering sub-layers are different. The display panel provided by the embodiment of the invention can have relatively high gate driving reliability.

Description

Technical Field

[0001] This disclosure relates to the field of display technology. More specifically, it relates to a display panel and a display device. Background Technology

[0002] Currently, high-end display products typically employ organic light-emitting diodes (OLEDs), including oxide thin-film transistors. OLED (Emitting Diode) display technology incorporates a gate driver on array (GOA) circuitry built into the array substrate. However, GOA is prone to driver malfunctions, leading to reliability issues in the display panel. Summary of the Invention

[0003] The purpose of this disclosure is to provide a display panel and display device to solve at least one of the problems existing in the prior art.

[0004] To achieve the above objectives, the present disclosure adopts the following technical solution: The first aspect of this disclosure provides a display panel including a display area and a non-display area disposed around the display area, and further comprising: a driving circuit layer and a light-emitting functional layer stacked on a substrate, the light-emitting functional layer including a plurality of light-emitting units, wherein the first electrode of the light-emitting unit away from the substrate is a reflective electrode. The non-display area includes: circuit areas located on the first and second sides opposite to the display area. The display panel also includes: a light filtering structure having multiple filter sub-layers stacked sequentially, the light filtering structure being disposed between the thin-film transistor in the circuit area and the display area, with adjacent filter sub-layers having different refractive indices.

[0005] Optionally, the circuit region includes a plurality of thin-film transistors, and at least a portion of the active layer of the plurality of thin-film transistors is a metal-oxide-semiconductor material.

[0006] Optionally, the non-display area includes: a circuit area and a redundant area disposed between the circuit area and the display area, with the light filtering structure disposed in the redundant area.

[0007] Optionally, the optical filtering structure includes: a plurality of first filter sub-layers and a second filter sub-layer disposed between the first filter sub-layers, the second filter sub-layer being an insulating material layer, the refractive index of the first filter sub-layer being different from the refractive index of the adjacent second filter sub-layer, and the number of the plurality of first filter sub-layers being odd.

[0008] Optionally, the orthographic projection of the first filter sublayer on the substrate and the orthographic projection of the second filter sublayer on the substrate at least partially overlap.

[0009] Optionally, the orthographic projection of the multiple filter sublayers onto the substrate includes a common overlapping portion.

[0010] Optionally, the number of the first filter sublayers is greater than or equal to 3.

[0011] Optionally, the display panel includes: a metal oxide semiconductor layer, a first transparent conductive layer located on the side of the metal oxide semiconductor layer near the substrate, and a second transparent conductive layer located on the side of the metal oxide semiconductor layer away from the substrate. The multiple filter sublayers include: a first sublayer located in the metal oxide semiconductor layer, a second sublayer located in the first transparent conductive layer, and a third sublayer located in the second transparent conductive layer.

[0012] Optionally, the light-emitting unit further includes: a second electrode on the side closer to the substrate relative to the first electrode, the second electrode being located in the second transparent conductive layer; The multiple filter sublayers also include a fourth sublayer disposed near the surface of the substrate of the third sublayer, and the display panel also includes: at least one intermediate film layer disposed between the film layer where the fourth sublayer is located and the second transparent conductive layer, the at least one intermediate film layer including a first opening, and the third sublayer disposed in the first opening.

[0013] Optionally, the first transparent conductive layer and the second transparent conductive layer Optionally, the display area also includes opposing third and fourth sides, and the light filtering structure extends beyond the outer boundary of the circuit area in the first direction, which is the direction from the third side to the fourth side.

[0014] A second aspect of this disclosure provides a display device including the display panel described above.

[0015] The beneficial effects of this disclosure are as follows: This disclosure addresses existing problems by providing a display panel and display device. By placing a light filtering structure between the display area and the non-display area thin-film transistors of the display panel, and by having multiple sequentially stacked filter sub-layers with different refractive indices among adjacent filter sub-layers, the propagation path of light propagating laterally toward the thin-film transistors in the bottom-emitting display unit can be blocked. This achieves lateral light filtering, preventing the oxide thin-film transistors in the circuit area from experiencing threshold voltage negative bias under light irradiation, thereby improving the driving reliability of the display panel and showing broad application prospects. Attached Figure Description

[0016] The specific embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0017] Figure 1A schematic diagram showing the output characteristics of an oxide thin-film transistor under different stresses is provided. Figure 2 A cross-sectional schematic diagram of a display panel in the related art is shown; Figure 3 A schematic diagram of side light incidence on a display panel in the related art is shown; Figure 4 A partial schematic diagram illustrating the structural relationship between a display area and a non-display area in a display panel according to an embodiment of the present disclosure is shown. Figure 5 A schematic cross-sectional view of a display area in a display panel according to an embodiment of the present disclosure is shown, wherein a light-emitting unit is illustrated; Figure 6 A schematic top view of a display panel according to an embodiment of the present disclosure is shown; Figure 7 A simulation diagram showing the filtering effect of an optical filtering structure according to an embodiment of the present disclosure is shown. Figure 8 A schematic top view of a display panel according to another embodiment of the present disclosure is shown. Detailed Implementation

[0018] To more clearly illustrate this disclosure, the preferred embodiments and accompanying drawings will be used for further description. Similar components in the drawings are indicated by the same reference numerals. Those skilled in the art should understand that the specific description below is illustrative rather than restrictive and should not be construed as limiting the scope of protection of this disclosure.

[0019] In the accompanying drawings, the size of one or more constituent elements, the thickness of layers, or areas are sometimes exaggerated for clarity. Therefore, this disclosure is not necessarily limited to these dimensions, and the shape and size of one or more parts in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate ideal examples, and this disclosure is not limited to the shapes or values ​​shown in the drawings.

[0020] It should be noted that although the terms "first," "second," etc., may be used herein to describe various components, members, elements, regions, layers, and / or parts, these components, members, elements, regions, layers, and / or parts should not be limited by these terms. Rather, these terms are used to distinguish one component, member, element, region, layer, and / or part from another. Thus, for example, the first component, first member, first element, first region, first layer, and / or first part discussed below may be referred to as a second component, second member, second element, second region, second layer, and / or second part without departing from the teachings of this disclosure.

[0021] Furthermore, the terms "having", "containing", and "including" used in this disclosure are all open-ended, meaning that when a module is described as "having", "containing", or "including" a first element, a second element, and / or a third element, it indicates that the module includes other elements in addition to the first element, the second element, and / or the third element.

[0022] In this disclosure, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification of the specification, and does not imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately varied depending on the orientation of the described constituent elements. Therefore, the description is not limited to the terms used in the specification and may be appropriately replaced as appropriate.

[0023] In this disclosure, unless otherwise stated, the term "co-layered arrangement" means a layer, component, or other structure formed by patterning two (or more) structures using the same patterning process, and their materials may be the same or different. For example, the precursors forming multiple co-layered arrangements may be made of the same material, while the final materials may be the same or different.

[0024] Currently, to reduce the cost of display panels in high-end display products, the application of oxide thin-film transistors (OTFTs) in gate drive circuits has been proposed. While the low leakage current of OTFTs can reduce refresh power consumption, thereby improving battery life and lowering costs, OTFTs suffer from negative bias temperature illumination stress (NBTiS) degradation due to the amorphous structure and stoichiometric characteristics of oxide semiconductors. Figure 1 The graphs showing the transfer characteristics of an oxide thin-film transistor under different stress conditions are presented. Figure 1 The three curves represent the original characteristic curve, the characteristic curve under negative bias temperature stress (NBTS), and the characteristic curve under negative bias temperature illumination stress (NBTiS), respectively. Figure 1It is evident that, relative to the initial output characteristic curve, the effect of applying a single negative bias temperature stress on the threshold voltage of the oxide thin-film transistor (OTT) is minimal. However, when further irradiated with a short-wavelength light source (especially 400nm to 600nm), the OTT exhibits a significant negative threshold voltage shift (Vth(-)shift) under the negative bias temperature light stress. Therefore, if the OTT in the gate drive circuit experiences a negative threshold voltage shift due to short-wavelength exposure and the influence of NBTiS, it will lead to driving problems, which in turn will cause display reliability issues in the display product.

[0025] The inventors further discovered that bottom-emitting OLED display products, such as Figure 2 The diagram shows the structure of a bottom-emitting WOLED display panel. The light-emitting surface of the display panel is the substrate side surface located at the bottom. The white light generated by the light-emitting unit passes through the color filter and is emitted as R / G / B rays towards the bottom substrate. Combined with... Figure 2 and Figure 3 As shown, the light-emitting unit is located in the display area, and the gate driving circuit is located outside the display area. When the R / G / B rays are emitted towards the substrate, there is side light. Due to the uniformity of the materials of the buffer layer and dielectric layer, the refractive index is the same. When these side rays propagate laterally, they are reflected by the metal connection lines of the redundant area or the output area of ​​the gate driving circuit. They propagate in a straight line in the multiple insulating layers such as the buffer layer and dielectric layer, and are further reflected in the gate layer 1, which serves as the bottom gate or light-shielding layer, and then incident on the oxide semiconductor layer (IZGO) of the oxide thin film transistor in the gate driving circuit. This causes the oxide thin film transistor to undergo a significant negative threshold voltage shift (Vth(-)shift) under the negative bias temperature photo-irradiation stress (NBTiS). In particular, as the driving time of the display panel increases, the negative threshold voltage shift value increases significantly, leading to leakage current in the gate driving circuit, which in turn causes poor driving of the gate driving circuit. Since a poor gate driving circuit can cause errors in the driving signal of the display area, it leads to reliability issues of the display panel.

[0026] In other words, the gate drive circuit in bottom-emitting OLED display panels suffers from poor driving due to the NBTiS characteristic of oxide thin-film transistors, resulting in reliability defects in the display panel.

[0027] In view of the above, embodiments of this disclosure provide a display panel, including a display area and a non-display area disposed around the display area, and further including: a driving circuit layer and a light-emitting functional layer stacked on a substrate, the light-emitting functional layer including a plurality of light-emitting units, wherein the first electrode of the light-emitting unit away from the substrate is a reflective electrode. The non-display area includes: circuit areas located on the first and second sides opposite to the display area. The display panel also includes: a light filtering structure having multiple filter sub-layers stacked sequentially, the light filtering structure being disposed between the thin-film transistor in the circuit area and the display area, with adjacent filter sub-layers having different refractive indices.

[0028] In this embodiment, by setting a light filtering structure between the thin-film transistors in the display area and the non-display area of ​​the display panel, and the light filtering structure having multiple filter sub-layers stacked sequentially with different refractive indices for adjacent filter sub-layers, the propagation path of light rays propagating laterally toward the thin-film transistors in the bottom-emitting display unit can be blocked, thereby achieving lateral light filtering and preventing the oxide thin-film transistors in the circuit area from undergoing threshold voltage negative bias under light irradiation, thereby improving the driving reliability of the display panel.

[0029] The following is in conjunction with the appendix Figures 4 to 6 The specific structure and function of embodiments of this disclosure are described. Among them, Figure 4 A partial schematic diagram showing the structural relationship between a display area and a non-display area in a display panel according to an embodiment of the present disclosure is provided, wherein the specific film layers of the display area are omitted; Figure 5 A schematic cross-sectional view of a display area in a display panel according to an embodiment of the present disclosure is shown, wherein a light-emitting unit is illustrated; Figure 6 A schematic top view of a display panel according to an embodiment of the present disclosure is shown as an example.

[0030] Combination Figures 4 to 6 As shown, the display panel includes a display area AA and a non-display area NA disposed around the periphery of the display area AA. The non-display area NA includes circuit areas 10 disposed on a first side and a second side opposite to the display area AA. The circuit area 10 located on at least one of the first side and the second side may include one or more sets of gate drive circuits (GOA).

[0031] The display panel further includes a driving circuit layer 200 and a light-emitting functional layer 300 stacked on the substrate 100. The light-emitting functional layer 300 includes a plurality of light-emitting units, wherein the first electrode 301 of the light-emitting units, which is away from the substrate 100, is a reflective electrode. Optionally, the first electrode 301 is a cathode. The first electrode 301 may be made of a highly reflective metal, such as silver (Ag), gold (Au), palladium (Pd), platinum (Pt), or an alloy of these metals, or a composite layer of these metals.

[0032] Combination Figure 4 As shown, when the first electrode 301 in the light-emitting unit that is far from the substrate 100 is a reflective electrode, the light-emitting unit emits light in the direction of the substrate 100 when it emits light, so that the display panel is a bottom-emitting display panel that emits light from one side of the substrate 100.

[0033] For example, refer to Figure 4 As shown, this example illustrates a WOLED display panel, where the light-emitting unit emits white light, which is then emitted as various colors of light after passing through a color filter layer 302 disposed on the light-emitting side of the light-emitting unit. Typically, the color filter layer 302 may include a red color filter, a green color filter, and a blue color filter, so that white light is emitted as red (R) light after passing through the red color filter, as green (G) light after passing through the green color filter, and as blue (B) light after passing through the blue color filter.

[0034] For example, in conjunction with the light-emitting unit shown in the figure, the light-emitting unit may further include a second electrode 304-3 that is close to the substrate 100 relative to the first electrode 301. Optionally, the second electrode 304-3 is an anode. The material of the second electrode 304-3 may be a transparent conductive layer. The material of the second electrode 304-3 may be indium tin oxide (ITO), IZO (indium zinc oxide), AZO (aluminum-doped zinc oxide), etc.

[0035] For example, the light-emitting unit may further include an organic light-emitting layer 306 disposed between the first electrode 301 and the second electrode 304-3. The organic light-emitting layer 306 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer sequentially stacked on the anode.

[0036] Exemplarily, the light-emitting functional layer 300 may further include a pixel define layer (PDL) 305, which defines an opening defining the light-emitting unit. Optionally, the pixel define layer 305 may be made of polyimide, acrylic, or polyethylene terephthalate. In embodiments of this disclosure, the pixel define layer 305 is a transparent material.

[0037] exist Figure 4 and Figure 5 In the example, the color filter layer 302 is disposed on the side of the second electrode 304-3 near the substrate 100 to filter the white light emitted by the light-emitting unit. A planarization layer 303 can be laid between the color filter layer 302 and the second electrode 304-3.

[0038] It should also be noted that Figure 5 The relative positional relationship between the color filter layer 302 and the second electrode 304-3 is shown only as an example and is not intended to limit their specific cross-sectional pattern. It should be understood that a black matrix layer for defining the color filter layer may also be included between the different color filter layers 302, which will not be elaborated here.

[0039] It should be noted that this disclosure is not intended to limit the types of the first electrode and the second electrode. That is, the first electrode can also be an anode, and the second electrode can also be a cathode. When their positions relative to the substrate are interchanged, the only difference lies in the positional difference between the hole injection layer and the electron injection layer, and the corresponding difference in the circuit structure of the driving light-emitting unit. It should be understood that as long as the first electrode 301 is a reflective electrode, it is within the scope of protection of this disclosure.

[0040] It should also be noted that although the display panel in the example in this article is a bottom-emitting WOLED display panel, this disclosure is not intended to be limited to this. The display panel can also be an OLED display panel, that is, each of the light-emitting units can emit red light, green light and blue light corresponding to RGB. In this case, the color filter layer is not necessary.

[0041] Continue to refer to Figure 4 and Figure 5 As shown, circuit region 10 includes a plurality of thin-film transistors. At least a portion of the active layer of the plurality of thin-film transistors is a metal-oxide-semiconductor (MODS) material. That is, the gate drive circuit in circuit region 10 includes oxide thin-film transistors. The MODS material can be, for example, amorphous indium gallium zinc oxide (a-IGZO) or IGZO-based multi-element oxides.

[0042] Optionally, the driving circuit layer may include a first gate layer, a first insulating layer, a metal-oxide-semiconductor layer, a second insulating layer, a second gate layer, a third insulating layer, and a source / drain metal layer sequentially stacked on the substrate 100. The third insulating layer may also be referred to as a "dielectric layer", and the first insulating layer may also be referred to as a "buffer layer".

[0043] Optionally, each of the first, second, and third insulating layers may be made of silicon oxide, silicon nitride, silicon oxide nitride, etc., and the first, second, and third insulating layers may have a single-layer structure or a multilayer structure including, for example, silicon nitride and / or silicon oxide. The material of each of the first and second gate layers may be selected from: gold (Au), silver (Ag), aluminum (Al), copper (Cu), nickel (Ni), platinum (Pt), magnesium (Mg), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), or alloys thereof. Each of the first and second gate layers may have a single-layer structure or a multilayer structure including different metal layers.

[0044] Combination Figure 4As shown, the oxide thin-film transistor in circuit region 10 may include: an active layer 204 disposed in a metal oxide semiconductor layer, a gate insulating layer 205 disposed in a second insulating layer, and a source or drain electrode 208 disposed in a source or drain metal layer. Exemplarily, the oxide thin-film transistor may also include a bottom gate or light-shielding region 202 located in the first gate layer.

[0045] Optionally, refer to Figure 4 As shown, the driving circuit layer may also include a protective layer disposed on the source or drain 208. This protective layer is an inorganic material and is also known as a "passivation layer PVX".

[0046] Combination Figure 5 As shown, when the display area includes an oxide thin-film transistor, the oxide thin-film transistor may also include: an active layer 204-3 disposed in the metal oxide semiconductor layer, a gate insulating layer 205-3 disposed in the second insulating layer, and a source or drain electrode 208-3 disposed in the source or drain metal layer. Exemplarily, the oxide thin-film transistor may also include a bottom gate or light-shielding region 202-3 located in the first gate layer.

[0047] It should be noted that, although Figure 4 and Figure 5 The oxide thin-film transistor shown is a top-gate structure, but this disclosure is not limited to this; the oxide thin-film transistors in the embodiments of this disclosure can also be bottom-gate structures. Furthermore, although... Figure 5 The circuitry shown in the display area also includes oxide thin-film transistors, but this disclosure is not limited thereto. Oxide thin-film transistors may also be included only in the circuitry area 10 outside the display area NA in the display panel. That is, this document is not intended to limit the type of thin-film transistors in the display area, nor is it intended to limit the specific structural form of the oxide thin-film transistors in the circuitry area.

[0048] Alternatively, the driving circuit layer 200 may further include a first transparent conductive layer located between the first gate layer and the substrate 100. This first transparent conductive layer may be a transparent conductive layer, and its material may be, for example, IGZO. For example, see... Figure 5 As shown, in the display area, the first transparent conductive layer can be used to prepare capacitor plates 201-3.

[0049] Specifically, in embodiments of this disclosure, reference is made to... Figure 4 and Figure 6 As shown, the display panel also includes a light filter structure FF.

[0050] The optical filter structure FF has multiple filter sub-layers stacked sequentially. The optical filter structure FF is located between the thin-film transistor in the circuit region 10 and the display region AA, and the refractive indices of adjacent filter sub-layers are different.

[0051] This configuration, by setting a light filtering structure between the thin-film transistors in the display area AA and the circuit area 10, and by using the difference in refractive index between adjacent filter sub-layers stacked sequentially in the light filtering structure to deflect or cut off the lateral light emitted from the display area AA, achieves the effect of light source blocking. This prevents lateral light from the display area from entering the thin-film transistors in the circuit area, thereby preventing the negative shift of the threshold voltage of the oxide transistor due to the NBTiS characteristics. This improves the stability of the gate drive circuit in the circuit area and enhances the reliability and dependability of the display panel.

[0052] Optionally, the optical filtering structure includes: a plurality of first filter sub-layers and a second filter sub-layer disposed between the first filter sub-layers, the second filter sub-layer being an insulating material layer, the refractive index of the first filter sub-layer being different from the refractive index of the adjacent second filter sub-layer, and the number of the plurality of first filter sub-layers being odd.

[0053] Typically, the refractive index of the buffer layer, gate insulating layer, dielectric layer, and passivation layer of the insulating material in the driving circuit layer is 1.4. However, the refractive indices of the semiconductor material layers and conductive layers, excluding the insulating material layer, are different from those of the insulating material layer. Therefore, the first filter sub-layer can be fabricated using the existing film layers in the driving circuit, thereby blocking the lateral light from the display area AA without increasing the additional process cost.

[0054] By setting the number of first filter sub-layers to an odd number, the surface of the first filter sub-layers can be utilized to the maximum extent, so that the surface of each second filter sub-layer can form a light blocking or turning interface with the adjacent first filter sub-layer, thereby minimizing the formation of a straight propagation path of light within the insulating layer.

[0055] continue Figure 4 As shown in the example, the optical filtering structure FF includes three first filter sublayers 201-1, 204-1, and 304-1, and a second filter sublayer 203-1 disposed between the first filter sublayers 201-1 and 204-1, and a second filter sublayer 207-1 disposed between the first filter sublayers 204-1 and 304-1. In addition, the optical filtering structure FF also includes filter sublayers formed by a portion of the substrate 100.

[0056] from Figure 4As can be seen, the three first filter sublayers 201-1, 204-1, and 304-1, together with the second filter sublayers 203-1 and 207-1, form a sandwich structure of the first filter sublayer to the second filter sublayer. When lateral light from the display area AA enters the light filtering structure FF, regardless of whether the lateral light is reflected by the connection line 201-2 located in the first gate layer or by the connection line 208-2 located in the source / drain metal layer, the light direction can be deflected by the interface with the difference in refractive index formed between the first and second filter sublayers. Each interface deflects the light once, which is equivalent to filtering and blocking the light with multiple filters.

[0057] Optionally, the number of the first filter sublayers is greater than or equal to 3.

[0058] When the number of first filter sub-layers is set to 3, the 1-layer substrate, 3-layer first filter sub-layers, and 3-layer second filter sub-layers together form a light filtering structure consisting of 6 thin films. Figure 7 The light filtering structure shown includes Figure 4 The diagram shows a simulation of the filtering effect on short-wavelength light using a three-layer first filter sublayer. The small squares in the diagram specifically illustrate the actual filtering effect from 600nm to 700nm. From... Figure 7 As can be seen, this optical filtering structure can reduce light wavelengths below 550nm to 55%, and light wavelengths in the 550nm to 700nm range to less than 20%. The peak wavelengths of blue light and red light are both 450nm and 650nm, respectively. Therefore, the optical filtering structure using the aforementioned three first-layer filter can achieve an extremely excellent light-blocking effect on RGB light.

[0059] Optionally, refer to Figure 4 As shown, the display panel includes: a metal oxide semiconductor layer, a first transparent conductive layer located on the side of the metal oxide semiconductor layer near the substrate 100, and a second transparent conductive layer located on the side of the metal oxide semiconductor layer away from the substrate 100. The plurality of filter sublayers in the light filtering structure FF include: a first sublayer 204-1 located on the metal oxide semiconductor layer, a second sublayer 201-1 located on the first transparent conductive layer, and a third sublayer 304-1 located on the second transparent conductive layer.

[0060] By configuring the optical filter structure FF such that one of its filter sub-layers is located on the same metal-oxide-semiconductor layer as the active layer of the oxide thin-film transistor (OTPT), while the other two sub-layers are located on the side closer to the substrate and the side farther from the substrate, respectively, a filter structure capable of effectively blocking short-wavelength RGB light can be achieved. Simultaneously, the second sub-layer 201-1 is positioned closer to the substrate relative to the active layer of the OPT to create effective light deflection filtering below, and the third sub-layer 304-1 is positioned farther from the substrate relative to the active layer of the OPT to create effective light deflection filtering above. In other words, regardless of whether lateral light is deflected upwards or downwards after being deflected at the interface between the first sub-layer 204-1 and the adjacent second filter sub-layer, it will be further deflected at the filter interface, thus maximizing the light-blocking effect of the three first filter sub-layers.

[0061] Optionally, further refer to Figure 4 As shown, considering the simplification of the fabrication process, the third sublayer 304-1 located on the side of the metal oxide semiconductor layer away from the substrate 100 can be located in the same film layer as the second electrode 304-3.

[0062] Furthermore, considering that under normal circumstances, the position of the film layer where the second electrode 304-3 is located is equal to or further away from the final light-emitting surface of the light-emitting unit, optionally, the multiple filter sub-layers also include a fourth sub-layer disposed near the surface of the substrate of the third sub-layer, and the display panel also includes: at least one intermediate film layer disposed between the film layer where the fourth sub-layer is located and the second transparent conductive layer, the at least one intermediate film layer including a first opening, and the third sub-layer disposed in the first opening.

[0063] This setup allows for the use of the existing transparent conductive film layer on the display panel, while also lowering the position of the third sub-layer to achieve a good light filtering effect.

[0064] Optionally, the orthographic projection of the first filter sublayer on the substrate and the orthographic projection of the second filter sublayer on the substrate at least partially overlap. This arrangement ensures that the light blocking effect of the light filtering structure is achieved by the superposition of multiple filter sublayers.

[0065] Alternatively, the orthographic projection of each filter sublayer onto the substrate includes a common overlapping portion. This arrangement maximizes the blocking effect of each filter sublayer on the light filtering structure.

[0066] Optionally, refer to Figure 6As shown, the display area also includes a third side and a fourth side opposite to each other. The light filtering structure extends beyond the outer boundary of the circuit area in the first direction, which is the direction from the third side toward the fourth side.

[0067] This configuration ensures that the light filtering structure can be placed on the lateral light path of each light-emitting unit in the display area AA of the display panel, thereby achieving a good light blocking effect on the oxide thin film transistors in the circuit area 10 for short-wavelength light sources.

[0068] Optionally, refer to Figure 6 As shown, the non-display area NA includes: a circuit area 10 and a redundant area (dummy) 20 disposed between the circuit area 10 and the display area AA. The redundant area can also be referred to as a "blank area". The light filter structure FF is disposed in the redundant area.

[0069] In another alternative embodiment, refer to Figure 8 As shown, the orthographic projection of the optical filtering structure on the substrate 100 overlaps with a portion of the circuit region 10.

[0070] In other words, a typical gate drive circuit includes a clock signal area for arranging clock signal lines, a shift register area for arranging shift registers composed of thin-film transistors, and an output area for arranging output traces. If the space between the circuit portion of the gate drive circuit that sets up the thin-film transistors and the output area of ​​the redundant area 20 is sufficient, a portion or all of this area can be used to place the optical filter structure, thereby making more reasonable use of the layout and wiring space and increasing the structural width of the optical filter structure. This will not be elaborated upon in this paper.

[0071] Another embodiment of this disclosure provides a display device including the aforementioned array substrate. The display device can be any product or component with display functionality, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator; this embodiment is not limited to this. By loading the aforementioned display panel, the display device can achieve higher gate drive stability, improve the reliability of the display panel, and enhance the product display effect.

[0072] Since the display panel included in the display device provided in this embodiment is the same as the display panel provided in the above embodiments, the previous embodiments are also applicable to the display device provided in this embodiment, and will not be described in detail in this embodiment.

[0073] Obviously, the above embodiments of this disclosure are merely examples for clearly illustrating this disclosure, and are not intended to limit the implementation of this disclosure. For those skilled in the art, other variations or modifications can be made based on the above description. It is impossible to exhaustively list all implementation methods here. Any obvious variations or modifications derived from the technical solutions of this disclosure are still within the protection scope of this disclosure.

Claims

1. A display panel, characterized in that, The system includes a display area and a non-display area surrounding the display area. It also includes a driving circuit layer and a light-emitting functional layer stacked on a substrate. The light-emitting functional layer includes multiple light-emitting units, and the first electrode of each light-emitting unit, located away from the substrate, is a reflective electrode. The non-display area includes: circuit areas disposed on a first side and a second side opposite to the display area. The display panel further includes: a light filtering structure having a plurality of filter sub-layers stacked sequentially, the light filtering structure being disposed between the thin-film transistor in the circuit area and the display area, and the refractive indices of adjacent filter sub-layers being different.

2. The display panel according to claim 1, characterized in that, The circuit region includes a plurality of thin-film transistors, and at least a portion of the active layers of the plurality of thin-film transistors are metal-oxide-semiconductor materials.

3. The display panel according to claim 1, characterized in that, The non-display area includes: the circuit area and a redundant area disposed between the circuit area and the display area. The optical filtering structure is located in the redundant area.

4. The display panel according to claim 1, characterized in that, The optical filtering structure includes: multiple first filter sub-layers and second filter sub-layers disposed between the first filter sub-layers, wherein the second filter sub-layers are insulating material layers, and the refractive index of the first filter sub-layers is different from that of the adjacent second filter sub-layers. The number of the plurality of first filter sublayers is odd.

5. The display panel according to claim 2, characterized in that, The orthographic projection of the first filter sublayer on the substrate and the orthographic projection of the second filter sublayer on the substrate at least partially overlap.

6. The display panel according to claim 5, characterized in that, The orthographic projection of the plurality of filter sublayers onto the substrate includes a common overlapping portion.

7. The display panel according to claim 4, characterized in that, The number of the first filter sublayer is greater than or equal to 3.

8. The display panel according to claim 1, characterized in that, The display panel includes: a metal oxide semiconductor layer, a first transparent conductive layer located on the side of the metal oxide semiconductor layer closer to the substrate, and a second transparent conductive layer located on the side of the metal oxide semiconductor layer away from the substrate. The plurality of filter sublayers include: a first sublayer located in the metal oxide semiconductor layer, a second sublayer located in the first transparent conductive layer, and a third sublayer located in the second transparent conductive layer.

9. The display panel according to claim 8, characterized in that, The light-emitting unit further includes a second electrode located on the substrate side relative to the first electrode, the second electrode being situated in the second transparent conductive layer. The plurality of filter sublayers further includes a fourth sublayer disposed on the third sublayer near the surface of the substrate. The display panel further includes at least one intermediate film layer disposed between the film layer containing the fourth sublayer and the second transparent conductive layer, the at least one intermediate film layer including a first opening. The third sub-layer is disposed in the first opening.

10. The display panel according to claim 1, characterized in that, The display area also includes opposing third and fourth sides. The optical filtering structure extends beyond the outer boundary of the circuit area in the first direction, where the first direction is the direction from the third side to the fourth side.

11. A display device, characterized in that, The display panel includes any one of claims 1-10.

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