Light-emitting chip, light-emitting device, and measurement device

Abstract

The light-emitting device includes: a substrate; a plurality of light emitting elements disposed on the substrate; a plurality of thyristors that, by being turned on, cause each of the light-emitting elements to emit light or increase the amount of light emitted by the light-emitting elements; a drive unit that is provided on the substrate and that individually drives the plurality of thyristors so as to transition the thyristors to an ON state; and a reference potential terminal that supplies a predetermined reference potential to the drive unit, and that electrically separates a region of the drive unit connected to the reference potential terminal from a side surface of the substrate.

Description

Technical Field

[0001] This invention relates to a light-emitting chip, a light-emitting device, and a measuring device. Background Technology

[0002] Patent Document 1 describes a light-emitting device comprising: a semiconductor substrate; a light-emitting element portion formed on the semiconductor substrate having a plurality of light-emitting elements for irradiating light; a signal line formed on the semiconductor substrate for transmitting a signal to the light-emitting elements; and an oxide film formed along the signal line between the signal line and the semiconductor substrate.

[0003] Patent document 2 describes a light-emitting part that utilizes transistor coupling.

[0004] Previous technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2023-42123

[0007] Patent Document 2: Japanese Patent Application Publication No. 2023-112937 Summary of the Invention

[0008] The technical problem to be solved by the invention

[0009] A light-emitting chip comprises a light-emitting element and a driving section for transmitting signals to the light-emitting element on a semiconductor substrate. In this case, leakage current from the light-emitting element sometimes flows from the substrate, particularly through a cut surface on the outer periphery of the substrate, to a terminal supplying a reference potential to the driving section. The light-emitting element, having emitted light once, remains in an active state, resulting in erroneous illumination.

[0010] The embodiments of the present invention relate to suppressing erroneous lighting compared to a structure in which leakage current from the light-emitting element may flow to the terminal supplying the reference potential of the driving section.

[0011] means for solving technical problems

[0012] (1) According to one aspect of the present invention, a light-emitting device is provided, comprising: a substrate; a plurality of light-emitting elements disposed on the substrate; a plurality of thyristors, wherein the plurality of thyristors cause each of the light-emitting elements to emit light by being turned on, or increase the amount of light emitted by the light-emitting elements; a driving unit disposed on the substrate, wherein the driving unit drives the plurality of thyristors individually to turn them on; and a reference potential terminal, wherein the reference potential terminal supplies a preset reference potential to the driving unit, and the area of ​​the driving unit connected to the reference potential terminal is electrically separated from the side surface of the substrate.

[0013] (2) According to another aspect of the present invention, a light-emitting chip is provided, comprising: a semiconductor substrate; a plurality of light-emitting elements and a plurality of thyristors disposed on the surface side of the substrate, wherein the plurality of thyristors cause the light-emitting elements to emit light or increase the amount of light emitted by the light-emitting elements by being turned on; a driving unit disposed on the surface side of the substrate, which drives the plurality of thyristors individually to turn them on; a reference potential terminal that supplies a preset reference potential to the driving unit; and a separation unit that suppresses the flow of current between the reference potential terminal and the substrate.

[0014] (3) In (2), the separation portion may also inhibit the extension of the driving portion to the outer periphery of the substrate.

[0015] (4) In (2), the separation portion may also suppress the formation of a current path via the side of the substrate between the light-emitting element and the reference potential terminal.

[0016] (5) In (2), the thyristor may be stacked on the light-emitting element disposed on the substrate, or the driving part may be stacked on a structure disposed on the substrate that is equivalent to the light-emitting element.

[0017] (6) In (5), the light-emitting element, the thyristor and the driving part may also be composed of a semiconductor stack consisting of multiple semiconductor layers with different conductivity types. Alternatively, the separation part may be a groove provided on the semiconductor stack and / or a region in the semiconductor stack in which insulating ions are injected.

[0018] (7) In (6), the light-emitting element and the structure may also be a diode structure formed by stacking a p-type semiconductor layer that serves as the anode and an n-type semiconductor layer that serves as the cathode. Alternatively, the trench or the region in which the insulating ions are implanted may extend from the surface side of the substrate to at least the side of the p-type semiconductor layer and the n-type semiconductor layer that constitute the diode structure away from the substrate.

[0019] (8) In (6), the light-emitting element may also have a region where current is not easily passed through due to oxidation, i.e., a current narrowing layer, and the depth of the groove is the depth reaching the current narrowing layer.

[0020] (9) In (5), the reference potential may also be applied to the side of the diode structure away from the substrate, which is formed by stacking a p-type semiconductor layer that serves as the anode and an n-type semiconductor layer that serves as the cathode.

[0021] (10) In (6), the groove and / or the region in which the insulating ions are injected may be configured to surround the drive unit.

[0022] (11) In (2), it is also possible that the driving unit sequentially changes the on-state of the plurality of thyristors.

[0023] (12) According to another aspect of the present invention, a light-emitting chip is provided, comprising: a semiconductor substrate; a plurality of light-emitting elements disposed on the surface side of the substrate; a plurality of thyristors stacked on the light-emitting elements, which emit light by being turned on, or increase the amount of light emitted by the light-emitting elements; a reference potential terminal disposed on a structure equivalent to the light-emitting elements and supplied with a predetermined reference potential; and a separation portion that suppresses the formation of a current path via the side side of the substrate between the reference potential terminal and the light-emitting elements.

[0024] (13) According to another aspect of the present invention, a light-emitting device is provided, comprising: a light-emitting chip as described in any one of (2) to (12); and a driver, one end of which is set to a ground potential and the other end is connected to the substrate of the light-emitting chip, and is switched to an on state at a predetermined time to pass a current for emitting light to the light-emitting element.

[0025] (14) According to another aspect of the present invention, a measuring device is provided, comprising: (13) the light-emitting device; and an acquisition unit, which acquires information related to the object based on reflected light obtained by the object being reflected by light from the light-emitting device.

[0026] Invention Effects

[0027] According to (1), (2), and (12), compared to the case where leakage current from the light-emitting element may flow to the reference potential terminal of the driving section, erroneous lighting can be suppressed.

[0028] According to (3), compared with the case where the driving part extends to the outer periphery of the substrate, it is less susceptible to damage caused by cutting the side of the light-emitting chip.

[0029] According to (4), damage caused by cutting is permissible.

[0030] According to (5), compared with the case where thyristors are not stacked on the light-emitting element, the light-emitting element can be arranged with a high density of light-emitting chips.

[0031] According to (6), the drive unit and the cutting surface can be electrically separated.

[0032] According to (7), the effect of electrically separating the drive unit and the cutting surface can be improved.

[0033] According to (8), the separation part can be formed using the same process as the formation of the current blocking part.

[0034] According to (9), electrical separation can be achieved through the pn junction.

[0035] According to (10), compared with the case where the driving part is not surrounded, the reference potential and the substrate potential can be reliably separated.

[0036] According to (11), compared with the case where the on state is not changed sequentially, the lighting control of the light-emitting element becomes easier.

[0037] According to (13), compared with high-side driving, it is possible to enable the light-emitting element to operate at a higher speed.

[0038] According to (14), a measuring device capable of performing three-dimensional measurements is provided. Attached Figure Description

[0039] Figure 1 This is a diagram illustrating an example of the measuring device used in Implementation Method 1.

[0040] Figure 2 This is an equivalent circuit diagram illustrating the light source device of application embodiment 1.

[0041] Figure 3 Here are examples of a top view and a cross-sectional view of the light-emitting chip according to embodiment 1. (a) is an example of a top view of the light-emitting chip, and (b) is an example of a cross-sectional view at line IIIB-IIIB of (a).

[0042] Figure 4 This is an example of an enlarged cross-sectional view of an island formed by stacking VCSELs and setting thyristors.

[0043] Figure 5 The diagram illustrates the leakage current in the light source device according to embodiment 1. (a) is a cross-sectional view when using a light-emitting chip without a slot, and (b) is a cross-sectional view when using a light-emitting chip with a slot.

[0044] Figure 6 Here are examples of a top view and a cross-sectional view of a light-emitting chip in a modified embodiment 1. (a) is an example of a top view of the light-emitting chip, and (b) is an example of a cross-sectional view at line VIB-VIB in (a).

[0045] Figure 7 This is an equivalent circuit diagram illustrating the light source device of application embodiment 2.

[0046] Figure 8This is an equivalent circuit diagram illustrating the light source device of application embodiment 3.

[0047] Figure 9 The diagram illustrates the operation of the light-emitting chip in Implementation Method 3. (a) is an equivalent circuit diagram, and (b) is a partial cross-sectional view of the transmission thyristor and the coupling transistor.

[0048] Figure 10 Here are examples of a top view and a cross-sectional view of the light-emitting chip according to embodiment 3. (a) is an example of a top view of the light-emitting chip, and (b) is an example of a cross-sectional view at line XB-XB of (a).

[0049] Figure 11 This is an equivalent circuit diagram illustrating the light source device of application embodiment 4.

[0050] Figure 12 The figures illustrate the leakage current in the light source device of application embodiment 4. (a) is a cross-sectional view when using a light-emitting chip without a slot, and (b) is a cross-sectional view when using a light-emitting chip with a slot. Detailed Implementation

[0051] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0052] Here, we will describe a case in which a light source device 1, which includes a light-emitting chip 10, is used as an example of a measuring device for measuring the three-dimensional shape (hereinafter referred to as 3D shape) of a measured object.

[0053] [Implementation Method 1]

[0054] (Measuring device 100)

[0055] Figure 1 This is a diagram illustrating an example of the measuring device 100 applied in Embodiment 1.

[0056] The measuring device 100 of Embodiment 1 measures the three-dimensional shape of a measured object. The measuring device 100 is a device for measuring 3D shape based on the so-called Time of Flight (ToF) method, which is based on the time of flight of light. The measuring device 100 includes a light source device 1 and a three-dimensional sensor (hereinafter referred to as a 3D sensor) 5. The light source device 1 includes a light-emitting chip 10 and a control unit 110. In the ToF method, the time from the timing of light emitted from the light source device 1 to the timing of light being reflected by the measured object and received by the 3D sensor 5 is measured. From the time acquired from the 3D sensor 5, the distance to the measured object is calculated, and the 3D shape of the measured object is determined. Measuring 3D shape is sometimes described as three-dimensional measurement, 3D measurement, or 3D sensing.

[0057] The light source device 1 emits light toward the object being measured. The 3D sensor 5 acquires the light reflected back by the object being measured (reflected light). The 3D sensor 5 outputs information (distance information) measured by the Time-of-Flight (ToF) method, which relates to the distance to the object being measured based on the time from the emission of the reflected light to its reception. Furthermore, the measuring device 100 may also include a measurement control unit 200. The measurement control unit 200 is configured as a computer including a CPU, ROM, RAM, etc., and determines the 3D shape of the specific object being measured based on the distance information acquired from the 3D sensor 5. The measurement control unit 200 is an example of an acquisition unit.

[0058] The measuring device 100 can be applied to situations where the object being measured is identified based on a specific 3D shape. For example, the measuring device 100 is mounted on a portable information processing device for facial recognition of a user who wants to access the device. That is, it acquires the 3D shape of the user's face, identifies whether access is permitted, and only permits the user to use the device (portable information processing device) if the user is identified as having permission to access the device.

[0059] In addition, the measuring device 100 can also be applied to situations such as augmented reality (AR) where the 3D shape of the measured object is continuously measured.

[0060] The object being measured is an example of an object, and the measuring device 100 is an example of a measuring device.

[0061] (Light source device 1)

[0062] Figure 2 This is an equivalent circuit diagram illustrating the light source device 1 according to embodiment 1. Figure 2 In the middle, the right direction of the paper is set as the +x direction.

[0063] Figure 2 The light source device 1 shown includes a light-emitting chip 10 and a control unit 110.

[0064] (Control Department 110)

[0065] The control unit 110 includes a transmission signal generation unit 120, a lighting signal generation unit 140, a reference potential supply unit 160, and a power potential supply unit 170.

[0066] The transmission signal generation unit 120 generates a first transmission signal that sequentially switches the multiple transmission thyristors T in the transmission unit 12 (described later) to the on state. 1 and second transmission signals 2. The lighting signal generation unit 140 generates a lighting signal that supplies current to the plurality of VCSELs described later to light up (illuminate). I. The reference potential supply unit 160 supplies the reference potential Vst to the transmission unit 12. The power supply potential supply unit 170 supplies the power supply potential Vga. Sometimes the current that makes the VCSEL light up (emit light) is described as the luminous current.

[0067] (Light-emitting chip 10)

[0068] The light-emitting chip 10 includes a light-emitting unit 11 and a transmission unit 12. The light-emitting chip 10 includes... 1 terminal, 2 terminals, Vga terminal, The light-emitting chip 10 has an I terminal and a Vst terminal. The Vsub terminal is a back electrode 91 disposed on the back side of the substrate 80 (see later description). Figure 3 (b) Figure 2 In the diagram, a triangle symbol is used to represent the terminal of the component connected to the substrate 80 (the same as the Vsub terminal).

[0069] The light-emitting unit 11 includes a vertical-cavity surface-emitting laser (VCSEL). Hereinafter, the vertical-cavity surface-emitting laser (VCSEL) will be referred to as VCSEL. Figure 2 In the example shown, six VCSELs 1 to 6 (hereinafter referred to as VCSELs unless otherwise specified) are included. Additionally, the light-emitting unit 11 includes six setting thyristors S1 to S6 (hereinafter referred to as setting thyristors S unless otherwise specified). Furthermore, the anodes of the VCSELs and the cathodes of the setting thyristors S are connected. That is, the setting thyristors S and VCSELs with the same number are connected in series. Incidentally, as described later... Figure 3 As shown in (b), the thyristor S is stacked on the VCSEL formed on the substrate 80. Furthermore, hereinafter, the thyristor S will sometimes be referred to as a thyristor.

[0070] In Embodiment 1, each VCSEL is an example of a light-emitting element. Additionally, each configured thyristor S is an example of a thyristor.

[0071] The transmission unit 12 includes six transmission thyristors T1 to T6 (hereinafter referred to as transmission thyristors T) and six lower diodes UD1 to UD6 (hereinafter referred to as lower diodes UD). Furthermore, among the transmission thyristors T1 to T6 and the lower diodes UD1 to UD6, transmission thyristors T and lower diodes UD with the same number are connected in series. Incidentally, as described later... Figure 3As shown in (b), the transmission thyristor T is stacked on top of the lower diode UD formed on the substrate 80. As described later, the lower diodes UD1 to UD6 are integrally formed without separation. Furthermore, the lower diodes UD1 to UD6 are not operational. Figure 2 In the middle, the lower diodes UD1 to UD6 are represented by dashed lines.

[0072] In addition, the transmission unit 12 transmits thyristors T1 to T6 in pairs according to their numbering order, and each pair is provided with coupling diodes D1 to D5 (hereinafter referred to as coupling diodes D1 to D5 without distinction).

[0073] Furthermore, the transmission unit 12 is equipped with power line resistors Rg1 to Rg6 (hereinafter referred to as power line resistors Rg without distinction).

[0074] In addition, the transmission unit 12 is equipped with a start-up diode SD.

[0075] Furthermore, the transmission unit 12 is equipped with a mechanism to prevent the supply of the first transmission signal described later. 1. The first transmission signal line 72 and the second transmission signal supplied The second transmission signal line 73 of 2 is supplied with excess current through current limiting resistors R1 and R2.

[0076] The VCSEL1 to VCSEL6 of the light-emitting section 11 and the setting thyristors S1 to S6, and the transmission thyristors T1 to T6 of the transmission section 12 are located in the light-emitting chip 10 from one side (the -x direction side). Figure 2 (left side) towards the other side (+x direction side, Figure 2 (On the right side) arranged in numerical order. Additionally, the lower diodes UD1-UD6, coupling diodes D1-D5, and power line resistors Rg1-Rg6 are arranged from one side (the -x direction side) of the light-emitting chip 10. Figure 2 (left side) towards the other side (+x direction side, Figure 2 (On the right side) arranged in numerical order.

[0077] In Embodiment 1, the light-emitting unit 11 has six VCSELs, six setting thyristors S, six transmission thyristors T in the transmission unit 12, six lower diodes UD, and six power line resistors Rg. Furthermore, the number of coupling diodes D is five, one less than the number of transmission thyristors T. The number of VCSELs, setting thyristors S, transmission thyristors T, lower diodes UD, power line resistors Rg, and coupling diodes D is not limited to the above; any predetermined number is acceptable. Additionally, the number of transmission thyristors T can be more than the number of VCSELs.

[0078] VCSEL, lower diode UD, coupling diode D, and start-up diode SD are two-terminal semiconductor devices having an anode terminal (anode) and a cathode terminal (cathode). Additionally, a thyristor (setting thyristor S, transmission thyristor T) is a three-terminal semiconductor device having an anode terminal (anode), a gate terminal (gate), and a cathode terminal (cathode). Furthermore, terminals may be omitted in the following descriptions.

[0079] As an example of Embodiment 1, the light-emitting chip 10 is made of III-V compound semiconductors such as GaAs, AlGaAs, and AlAs. The light-emitting chip 10 is a so-called monolithic integrated circuit, formed by epitaxially growing multiple semiconductor layers of different conductivity types on a semiconductor substrate 80. Incidentally, the light-emitting chip 10 is obtained by dicing a semiconductor wafer on which multiple light-emitting chips 10 are fabricated together.

[0080] Next, the electrical connections of each component in the light-emitting chip 10 will be explained.

[0081] The cathodes of VCSEL and the lower diode UD are each connected to the substrate 80 (common cathode). These cathodes are connected via the Vsub terminal, i.e., the back electrode 91, located on the back side of the substrate 80 (see reference). Figure 3 (b) is supplied with a substrate potential Vsub.

[0082] The anode of each VCSEL is connected to the cathode of the set thyristor S.

[0083] The anodes of each of the lower diodes UD are connected to the cathode of the transmission thyristor T. The cathode of the transmission thyristor T (which is the same as the anode of the lower diode UD) is connected to the reference potential line 74. The reference potential line 74 is connected to the Vst terminal. A reference potential Vst is supplied to this Vst terminal from the reference potential supply unit 160. The Vst terminal may also be as described later. Figure 3 The reference potential terminal 340 is shown in (a) and (b). The reference potential terminal 340 is a terminal that supplies a reference potential to the transmission unit 12.

[0084] The anodes of the odd-numbered transmission thyristors T1, T3, and T5 are connected to the first transmission signal line 72 along the arrangement of the transmission thyristors T. The first transmission signal line 72 is connected to the first transmission signal line 72 via the current limiting resistor R1. 1. Terminal connection. The signal generation unit 120 of the control unit 110 transmits signals to this... Terminal 1 supplies the first transmission signal 1.

[0085] On the other hand, the anodes of the even-numbered transmission thyristors T2, T4, and T6 are connected to the second transmission signal line 73 along the arrangement of the transmission thyristors T. The second transmission signal line 73 is connected to the second transmission signal line 73 via the current limiting resistor R2. 2-terminal connection. The signal generation unit 120 of the control unit 110 transmits signals to this... Terminal 2 supplies the second transmission signal 2.

[0086] The anodes of each thyristor S are connected to the lighting signal line 75. The lighting signal line 75 is connected to... I-terminal connection. The current limiting resistor RI located on the outside of the light-emitting chip 10 transmits the signal from the lighting signal generator 140 of the control unit 110 to... Terminal I supplies the lighting signal I. Light up the signal I supplies current to the VCSEL for lighting.

[0087] Each of the transmission thyristors T1 to T6 has its own gates Gt1 to Gt6 (hereinafter referred to as gate Gt unless otherwise distinguished) connected one-to-one with the gates Gs1 to Gs6 of the corresponding designator thyristors S1 to S6 (hereinafter referred to as gate Gs unless otherwise distinguished). Therefore, gates with the same number among gates Gt1 to Gt6 and gates Gs1 to Gs6 are electrically at the same potential. Thus, for example, referring to gate Gt1 (gate Gs1) indicates that they are at the same potential.

[0088] Coupling diodes D1 to D5 are connected between each pair of gates Gt1 to Gt6 of the transmission thyristors T1 to T6, arranged in numerical order. That is, coupling diodes D1 to D5 are directly connected, sandwiched between each of the gates Gt1 to Gt6. The orientation of coupling diode D1 is such that current flows from gate Gt2 to gate Gt1. The same applies to the other coupling diodes D2 to D5.

[0089] The gate Gt (gate Gs) of the transmission thyristor is connected to the power supply line 71 via a power supply line resistor Rg corresponding to that of the transmission thyristor T. The power supply line 71 is connected to the Vga terminal. The power supply potential Vga is supplied to the Vga terminal from the power supply potential supply unit 170 of the control unit 110.

[0090] The gate Gt1 of the transmission thyristor T is connected to the anode of the start-up diode SD. On the other hand, the cathode of the start-up diode SD is connected to the second transmission signal line 73.

[0091] Figure 3 (a) and (b) are examples of top view and cross-sectional view of the light-emitting chip 10 according to embodiment 1. Figure 3 (a) is an example of a top view layout of the light-emitting chip 10. Figure 3 (b) is Figure 3 An example of a cross-sectional view at line IIIB-IIIB in (a).

[0092] In addition, Figure 3 In (a) and (b), the protective layer described later is omitted. Figure 4 The protective layer 90) and the light-shielding layer (described later) Figure 4 The light-shielding layer is 95%. Additionally, in... Figure 3 In (b), the following is omitted. Figure 3 The wiring connections shown in (a) are as follows.

[0093] Figure 3 (a) targeting Figure 2 The VCSELs 1-6, setting thyristors S1-S6, and transmission thyristors T1-T6 are shown; VCSELs 1-4, setting thyristors S1-S4, and transmission thyristors T1-T4 are also shown. Furthermore, for the lower diodes UD1-UD6, coupling diodes D1-D5, and power line resistors Rg1-Rg6, lower diodes UD1-UD4, coupling diodes D1-D4, and power line resistors Rg1-Rg4 are shown.

[0094] Figure 3 (b) shows Figure 2 The diagram shows a partial cross-section of the following components: the set thyristor S1, VCSEL1, transmission thyristor T1, lower diode UD1, coupling diode D1, and power line resistor Rg1.

[0095] First, refer to Figure 3 (b) describes the cross-sectional structure of the light-emitting chip 10.

[0096] The light-emitting chip 10 has an n-type cathode layer 81, a light-emitting layer 82, and a p-type anode layer 83, which constitute the VCSEL and the lower diode UD, sequentially disposed on an n-type substrate 80 (substrate 80). The n-type cathode layer 81 and the p-type anode layer 83 are composed of a distributed Bragg reflector (DBR) layer (hereinafter referred to as DBR layer) with multiple layers of semiconductor layers having different refractive indices stacked on it. Therefore, the n-type cathode layer 81 will be referred to as n-cathode (DBR) layer 81 below. Similarly, the p-type anode layer 83 will be referred to as p-anode (DBR) layer 83.

[0097] In the light-emitting chip 10, a tunnel junction (tunnel diode) layer 84 (tunnel junction layer 84) is provided on the p anode (DBR) layer 83.

[0098] Furthermore, the light-emitting chip 10 has an n-type cathode layer 85 (n-cathode layer 85), a p-type gate layer 86 (p-gate layer 86), an n-type gate layer 87 (n-gate layer 87), and a p-type anode layer 88 (p-anode layer 88) that constitute a setting thyristor S, a transmission thyristor T, a coupling diode D, and a power line resistor Rg, respectively, on the tunnel junction layer 84.

[0099] The expressions in parentheses above will be used below. Other cases will also be set the same.

[0100] like Figure 3 As shown in (a) and (b), the VCSEL, lower diode UD, setting thyristor S, transmission thyristor T, coupling diode D, and other components are composed of multiple islands separated by etching away a portion of each of the aforementioned layers. Furthermore, the islands are sometimes described as mesas, and the etching that forms the islands (mesas) is sometimes described as mesas etching.

[0101] Furthermore, in the light-emitting chip 10, these islands and power lines 71, first transmission signal line 72, second transmission signal line 73, reference potential line 74, lighting signal line 75, etc., are connected via a protective layer (described later). Figure 4 The protective layer 90) through hole (in Figure 3 (a) is represented by a solid circle. ) connects. In the following description, the protective layer and through-holes are omitted.

[0102] In addition, such as Figure 3 As shown in (b), a back electrode 91, which serves as a Vsub terminal, is provided on the back side of the substrate 80.

[0103] Here, the descriptions of the n-cathode (DBR) layer 81 and the p-anode (DBR) layer 83 correspond to their functions when forming the VCSEL and the lower diode UD. That is, the n-cathode (DBR) layer 81 functions as the cathode, and the p-anode (DBR) layer 83 functions as the anode.

[0104] Furthermore, the descriptions of the n-cathode layer 85, p-gate layer 86, n-gate layer 87, and p-anode layer 88 correspond to their functions when configuring the thyristor S and the transmission thyristor T. That is, the n-cathode layer 85 functions as the cathode, the p-gate layer 86 and n-gate layer 87 function as the gate, and the p-anode layer 88 functions as the anode.

[0105] Furthermore, when the aforementioned layers constitute the coupling diode D and the power line resistor Rg, they have different functions as described later.

[0106] Furthermore, as explained below, the light-emitting chip 10 includes multiple islands that do not have a portion of any of the following layers: n-cathode (DBR) layer 81, light-emitting layer 82, p-anode (DBR) layer 83, tunnel junction layer 84, n-cathode layer 85, p-gate layer 86, n-gate layer 87, and p-anode layer 88. For example, islands 301 and 302, described later, do not have a portion of the p-anode layer 88.

[0107] Because the substrate 80, the back electrode 91, and the n-cathode (DBR) layer 81 are at the same potential, they can be included as the substrate 80. In this specification, the substrate 80 sometimes includes the back electrode 91 and the n-cathode (DBR) layer 81.

[0108] Next, use Figure 3 (a) illustrates an example of the planar layout of the light-emitting chip 10.

[0109] Island section 301 is equipped with VCSEL1 and setting thyristor S1. Island section 302 is equipped with transmission thyristor T1 and coupling diode D1. Island section 303 is equipped with power line resistor Rg1. Island section 304 is equipped with start-up diode SD. Island section 305 is equipped with current limiting resistor R1, and island section 306 is equipped with current limiting resistor R2.

[0110] Furthermore, in the light-emitting chip 10, multiple islands identical to those of islands 301, 302, and 303 are formed side by side. These islands, like those of islands 301, 302, and 303, are equipped with VCSEL2 to VCSEL6, setting thyristors S2 to S6, lower diodes UD2 to UD6, transmission thyristors T2 to T6, coupling diodes D2 to D5, etc.

[0111] Island sections 302 to 306, and island sections similar to those of island sections 302 and 303, are provided on island section 300.

[0112] Here, through Figure 3 (a) and (b) provide a detailed description of island sections 300 to 306.

[0113] like Figure 3 As shown in (b), island 301 is separated from other islands by removing the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, tunnel junction layer 84, p-anode (DBR) layer 83, and light-emitting layer 82 along the thickness direction through mesa etching. Furthermore, only a portion of the light-emitting layer 82 needs to be removed along the thickness direction. Also, a portion or all of the n-cathode (DBR) layer 81 can be removed.

[0114] The VCSEL1 located on the island 301 is composed of an n-cathode (DBR) layer 81, a light-emitting layer 82, and a p-anode (DBR) layer 83. The thyristor S is composed of an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 stacked through a tunnel junction layer 84 stacked on the p-anode (DBR) layer 83 of the VCSEL1.

[0115] As in Figure 3 As shown in black in (b), the p-anode (DBR) layer 83 of the VCSEL includes a current-straining layer (described later) that restricts current flow. Figure 4 The current-restricting layer 83a is formed by oxidizing a portion of the semiconductor layer constituting the p-anode (DBR) layer 83, which is exposed by mesa etching, to create a current-blocking portion β where current flow is difficult. On the other hand, the unoxidized central portion of the semiconductor layer constituting the p-anode (DBR) layer 83 becomes a current-passing portion α where current flow is easy.

[0116] By incorporating a current blocking section β, the power consumed by non-luminescent recombination is suppressed. This current blocking section β enables both low power consumption and improved light extraction efficiency. Furthermore, light extraction efficiency refers to the amount of light extracted per unit of power.

[0117] In order to expose the current narrow layer, the depth of the mesa etching of the separation island 301 is preferably a depth that removes a portion of the thickness direction of the light-emitting layer 82.

[0118] Furthermore, in the island portion 301, the portion of the setting thyristor S1 (p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, and tunnel junction 84) from which light is emitted can also be removed. In this case, the setting thyristor S1 becomes cylindrical. As a result, the light emitted by the suppression VCSEL1 is absorbed by the setting thyristor S1, thus reducing the light intensity.

[0119] Back Figure 3 (b) will be explained regarding island 301. The thyristor S1 is configured with a p-type ohmic electrode 321 (p-ohmic electrode 321) disposed on region 311 of the p-anode layer 88 as the anode terminal. In addition, an n-type ohmic electrode 331 (n-ohmic electrode 331) disposed on the n-gate layer 87 exposed after the p-anode layer 88 has been removed is configured as the terminal of the gate Gs1.

[0120] Island 300 is separated from island 301 and islands identical to island 301 by etching away the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, tunnel junction layer 84, p-anode (DBR) layer 83, and light-emitting layer 82 along the thickness direction. Island 302 to 306, and islands identical to island 302 and 303 are provided in island 300. Island 302 to 306 will be described below.

[0121] Island sections 302-306 are separated in island section 300 by removing the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, and tunnel junction layer 84 through mesa etching. In island section 300, a p-anode (DBR) layer 83, a light-emitting layer 82, and an n-cathode (DBR) layer 81 remain at the bottom of island sections 302-306. The remaining p-anode (DBR) layer 83, light-emitting layer 82, and n-cathode (DBR) layer 81 in island section 300 constitute the lower diodes UD1-UD6. That is, the lower diodes UD1-UD6 are integrated without separation. The lower diodes UD1-UD6 are also composed of the n-cathode (DBR) layer 81, light-emitting layer 82, and p-anode (DBR) layer 83, similar to the VCSEL which serves as a light-emitting element. Therefore, the lower diode UD is the structure of this embodiment and is equivalent to the light-emitting element. The VCSEL and the lower diode UD are diode structures based on a pn junction.

[0122] Furthermore, during the mesa etching of island sections 302-306, the n-cathode layer 85 and tunnel junction layer 84 may not need to be removed. The p-anode (DBR) layer 83 and the n-cathode layer 85 are stacked via the tunnel junction layer 84. Therefore, the p-anode (DBR) layer 83 and the n-cathode layer 85 are at the same potential, so the tunnel junction layer 84 and the n-cathode layer 85 may not need to be removed and can be retained. Hereinafter, the p-anode (DBR) layer 83 will be exposed for explanation.

[0123] The transmission thyristor T1, which is located on the island 302, is composed of an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88, just like the setting thyristor S1.

[0124] Furthermore, the p-ohm electrode 323 disposed on region 313 of the p-anode layer 88 is designated as the anode terminal. Furthermore, the n-ohm electrode 332 disposed on the n-gate layer 87 exposed after the p-anode layer 88 is removed is designated as the terminal of the gate Gt1.

[0125] Similarly, the coupling diode D1 disposed on the island portion 302 is composed of an n-gate layer 87 and a p-anode layer 88. Furthermore, the p-ohm electrode 324 disposed on the region 314 of the p-anode layer 88 is designated as the anode terminal. Moreover, the n-ohm electrode 332 disposed on the n-gate layer 87 exposed after removing the p-anode layer 88 is designated as the cathode terminal. Here, the cathode terminal of the coupling diode D is the same as the terminal of the gate Gt1.

[0126] The power line resistor Rg1 provided on the island 303 is composed of a p-anode layer 88. That is, the power line resistor Rg1 is provided with the p-anode layer 88, which is provided between the p-ohm electrode 333 and the p-ohm electrode 334 on the p-anode layer 88, as a resistor.

[0127] Figure 3 Although not shown in (b), the startup diode SD provided on the island portion 304 is composed of an n-gate layer 87 and a p-anode layer 88. That is, the startup diode SD uses the p-ohm electrode 325 provided on the region 315 of the p-anode layer 88 as the anode terminal. Moreover, the n-ohm electrode 335 provided on the n-gate layer 87 exposed after removing the p-anode layer 88 is used as the cathode terminal (see reference). Figure 3 (a)).

[0128] The current limiting resistor R1 located on island 305, the current limiting resistor R2 located on island 306, and the power line resistor Rg1 located on island 303 are configured similarly. The p-anode layer 88 between the two p-ohm electrodes (unsigned) is configured as a resistor (see reference). Figure 3 (a)).

[0129] The transmission section 12 is composed of island 302, which includes a transmission thyristor T1 and a coupling diode D1; island 303, which includes a power line resistor Rg1; island 304, which is identical to islands 302 and 303; island 304, which includes a startup diode SD; and islands 305 and 306, which include current limiting resistors R1 and R2. The transmission section 12 is located on island 300.

[0130] A groove 350 is provided in the island portion 300, and the groove 350 is configured to surround island portions 302-306 and island portions identical to island portions 302 and 303. The groove 350 is provided in the portion of the island portion 300 where the p-anode (DBR) layer 83 is exposed by removing the p-anode (DBR) layer 83 through mesa etching. The groove 350 only needs to remove at least the p-anode (DBR) layer 83, and can be removed in a way that reaches the light-emitting layer 82 below the p-anode (DBR) layer 83, or it can be removed in a way that reaches the n-cathode (DBR) layer 81. That is, the groove 350 can be the same depth as the mesa etching that separates the island portion 301. Therefore, the groove 350 can be formed only when performing the mesa etching that separates the island portion 301. That is, the mesa etching that separates the island portion 301 and the mesa etching that forms the groove 350 can be performed using the same process. Therefore, there is no need to set up a separate mesa etching process for forming the groove 350. Incidentally, the trench 350 extends at least from the surface side of the substrate 80 to the side of the p-type semiconductor layer (e.g., p-anode (DBR) layer 83) and the n-type semiconductor layer (e.g., n-cathode (DBR) layer 81) that constitute a diode structure away from the substrate 80 (e.g., p-anode (DBR) layer 83). Thus, electrical separation can be achieved through the pn junction between the p-type semiconductor layer and the n-type semiconductor layer that constitute the diode structure.

[0131] The following section will describe slot 350.

[0132] Next, in Figure 3 In section (a), the connection relationships between the components are explained.

[0133] The lighting signal line 75 has a main stem 75a and multiple branches 75b. The main stem 75a is configured to extend along the column direction of the setting thyristor S / VCSEL. The branches 75b branch off from the main stem 75a and connect to the anode terminal, i.e., the p-ohm electrode 321, of the setting thyristor S1 located on the island 301. The anode terminals of the other setting thyristors S are the same.

[0134] Light up signal line 75 and I-terminal connection.

[0135] The first transmission signal line 72 is connected to the anode terminal, i.e., the p-ohm electrode 323, of the transmission thyristor T1 disposed on the island portion 302. The anode terminals of other odd-numbered transmission thyristors T disposed on the same island portion as island portion 302 are connected to the first transmission signal line 72. The first transmission signal line 72 is connected via a current limiting resistor R1 disposed on island portion 305 and... 1 terminal connection.

[0136] On the other hand, the second transmission signal line 73 is connected to the anode terminal, i.e., the p-ohm electrode (unsigned), of the even-numbered transmission thyristor T located on the island section (unmarked). The second transmission signal line 73 is connected via a current-limiting resistor R2 located on the island section 306 and... 2-terminal connection.

[0137] Power line 71 is connected to one terminal of power line resistor Rg1, i.e., p-ohm electrode 334, which is located on island 303. One terminal of other power line resistors Rg is also connected to power line 71. Power line 71 is connected to the Vga terminal.

[0138] The n-ohm electrode 331 (gate terminal Gs1) of the setting thyristor S1 located on the island 301 is connected to the n-ohm electrode 332 (gate terminal Gt1) of the island 302 via the connecting wire 76.

[0139] The n-ohm electrode 332 (gate terminal Gt1) is connected to the p-ohm electrode 333 (the other terminal of the power line resistor Rg1) of the island 303 via the connection wiring 77.

[0140] The p-ohm electrode 324 (anode terminal of coupling diode D1) located on island 302 is connected to the gate terminal Gt2 (n-ohm electrode, unsigned) of the adjacent transmission thyristor T2 via connecting wiring 79.

[0141] Although the explanation is omitted here, the same applies to other VCSELs, setting thyristor S, transmission thyristor T, coupling diode D, etc.

[0142] The n-ohm electrode 332 (gate terminal Gt1) of island 302 is connected to the p-ohm electrode 325 (cathode terminal of startup diode SD) provided on island 304 via connecting wiring 78. The n-ohm electrode 335 (cathode terminal of startup diode SD) is connected to the second transmission signal line 73.

[0143] In the island portion 300, a p-ohm electrode 340 is provided on the p-anode (DBR) layer 83 surrounded by the groove 350. The p-ohm electrode 340 is connected to the reference potential line 74. The reference potential line 74 is connected to the Vst terminal. A reference potential Vst is supplied to the Vst terminal. Alternatively, the p-ohm electrode 340 may be provided as either the Vst terminal or the reference potential terminal 340 without the reference potential line 74 and the Vst terminal. Hereinafter, the Vst terminal will be referred to as the reference potential terminal 340. The reference potential terminal 340 is an example of a reference potential terminal. The p-anode (DBR) layer 83 on which the reference potential terminal 340 is provided is continuously provided to the lower part of the transmission unit 12. Moreover, the p-anode (DBR) layer 83 becomes a potential (reference potential Vst) that serves as a reference for the operation of the transmission unit 12 via the reference potential terminal 340. Incidentally, the transmission unit 12 is provided in the area surrounded by the groove 350 and operates based on the reference potential Vst supplied to the reference potential terminal 340.

[0144] Furthermore, in the mesa etching of islands 302 to 306, without removing the n-cathode layer 85 and tunnel junction layer 84, it is sufficient to set the p-ohm electrode 340 as an n-ohm electrode.

[0145] (Set the stacked structure of thyristor S and VCSEL)

[0146] Figure 4 This is an example of an enlarged cross-sectional view of the island 301, which is formed by stacking thyristors S and VCSELs, and is the light-emitting chip 10. Figure 3 A cross-sectional view at line IV-IV in (a). Furthermore, Figure 4 With Figure 3 The image in (a) corresponds to the cross-section of the island formed by the stacked thyristor S and VCSEL, viewed from the -y direction. Additionally, in Figure 4 The diagram shows an island 301 formed by stacking VCSEL1 and a set thyristor S1, and an island (unlabeled) formed by stacking VCSEL2 and a set thyristor S2. Figure 4 On the right side of the paper, VCSEL1 and VCSEL2 are not distinguished and are referred to as VCSEL. Similarly, setting thyristor S1 and setting thyristor S2 are not distinguished and are referred to as setting thyristor S.

[0147] As described above, a set thyristor S is stacked on the VCSEL across a tunnel junction layer 84. That is, the set thyristor S and the VCSEL are connected in series.

[0148] Furthermore, "on the VCSEL" does not only refer to the state of direct contact with the VCSEL, but also includes the state of being located above it without direct contact. The same applies to expressions such as "on the substrate."

[0149] like Figure 4 As shown, the VCSEL is composed of a semiconductor stack formed by epitaxially growing an n-cathode (DBR) layer 81, a light-emitting layer 82, and a p-anode (DBR) layer 83 sequentially on an n-type substrate 80.

[0150] The n-cathode (DBR) layer 81 and the p-anode (DBR) layer 83 are DBR layers formed by alternating layers of high-refractive-index layers with relatively high refractive indices and low-refractive-index layers with relatively low refractive indices. Moreover, the n-cathode (DBR) layer 81 and the p-anode (DBR) layer 83 are configured to reflect the light emitted by the VCSEL.

[0151] Furthermore, the p-anode (DBR) layer 83 is configured including a current-restricting layer 83a. In this example, the current-restricting layer 83a is disposed on the side of the p-anode (DBR) layer 83 facing the light-emitting layer 82. The current-restricting layer 83a is composed of a current-passing portion α and a current-blocking portion β. Figure 4 As shown, the current-passing portion α is located in the center of the VCSEL, and the current-blocking portion β is located in the periphery of the VCSEL. Specifically, the portion with thick solid lines in the current-restricting layer 83a becomes the current-blocking portion β, while the portion sandwiched between the two thick solid lines where the current-restricting layer 83a is not located becomes the current-passing portion α. ​​The current-blocking portion β does not need to completely block the flow of current; it is sufficient to concentrate the current in the current-passing portion α. ​​In other words, the current-blocking portion β only needs to make it more difficult for current to flow than the current-passing portion α.

[0152] In addition, the current narrowing layer 83a can also be disposed on the n-cathode (DBR) layer 81.

[0153] The mesa separating the island 301 is etched to the depth to which the side surface of the current narrowing layer 83a is exposed. When the groove 350 is formed simultaneously with the etching of the mesa separating the island 301, the groove 350 is also the depth to which the side surface of the current narrowing layer 83a is exposed.

[0154] The luminescent layer 82 is a quantum well structure formed by alternating well layers and barrier layers. Alternatively, the luminescent layer 82 can also be an intrinsic (i) type layer (i layer) without added impurities. Furthermore, the luminescent layer 82 can also be a structure other than a quantum well structure, for example, a quantum wire or a quantum box (quantum dot).

[0155] Tunnel layer 84 is an n-type layer with a high concentration of added n-type impurities (dopants). ++ Layers and p-type impurities with high concentrations added ++Even under reverse bias, current flows through the tunneling effect in the tunnel junction layer 84. The tunnel junction layer 84 suppresses the current flow caused by the p-anode (DBR) layer 83 of the VCSEL and the setting of the thyristor S to reverse bias. Even under reverse bias, current flows through the tunneling effect.

[0156] The thyristor S is configured to consist of an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 stacked on the tunnel junction layer 84. That is, it is a four-layer pnpn structure.

[0157] These semiconductor layers are formed, for example, by stacking p-type semiconductor layers (p-gate layer 86, p-anode layer 88) and n-type semiconductor layers (n-cathode layer 85, n-gate layer 87) based on GaAs, AlGaAs, AlAs, etc., on a substrate 80. The semiconductor layers are stacked, for example, by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Hereinafter, the stacked semiconductor layers will be referred to as a semiconductor stack.

[0158] Furthermore, the structure of the substrate 80, the n-cathode (DBR) layer 81 constituting the VCSEL, the light-emitting layer 82, the p-anode (DBR) layer 83, the n-cathode layer 85, the p-gate layer 86, the n-gate layer 87, and the p-anode layer 88 constituting the thyristor S will be described in more detail in the following section.

[0159] The p-ohmic electrode 321 is, for example, Au (AuZn) containing Zn, which is readily made into ohmic contact with a p-type semiconductor layer such as the p-anode layer 88.

[0160] n-ohm electrode 331 (reference) Figure 3 (b) For example, Au (AuGe) contains Ge that can easily make ohmic contact with an n-type semiconductor layer such as an n-gate layer 87.

[0161] The back electrode 91 is similar to the n-ohm electrode 331, for example, AuGe.

[0162] Furthermore, in the above, an n-ohm electrode 331 is provided on the n-gate layer 87 to set the gate Gs of the thyristor S, but a p-ohm electrode can also be provided on the p-gate layer 86 to set the gate Gs of the thyristor S.

[0163] In addition, a protective layer 90 is provided in the light-emitting chip 10. This protective layer 90 is made of a light-transmitting insulating material that is provided to cover the surface and sides of the island. The protective layer 90 is made of, for example, SiO2, SiON, SiN, etc.

[0164] Furthermore, a light-shielding layer 95 is provided in the light-emitting chip 10, which is used to suppress light emitted from the set thyristor S from leaking between the islands onto the surface of the light-emitting chip 10. The light-shielding layer 95 can also be the wiring described above.

[0165] (thyristor)

[0166] Next, the basic operation of the thyristors (transmission thyristor T, setting thyristor S) will be explained. As mentioned above, a thyristor is a semiconductor device having a pnpn structure formed by stacking an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88, and having three terminals: an anode terminal, a cathode terminal, and a gate terminal. Here, the forward voltage (diffusion potential) Vd of the pn junction formed by the p-type semiconductor layer and the n-type semiconductor layer will be used as an example, and will be set to 1.5V for explanation.

[0167] The following, as an example, will be applied to the Vsub terminal, i.e., the back electrode 91 (refer to...). Figure 3 (b) The substrate potential Vsub supplied to the Vst terminal (reference potential terminal 340) and the reference potential Vst supplied to the Vst terminal (reference potential terminal 340) are set to a low level potential (hereinafter referred to as "L"). The power supply potential Vga supplied to the Vga terminal is set to a high level potential (hereinafter referred to as "H"). It is set to 5V. Therefore, it is sometimes described as "H" (5V) and "L" (0V). "L" (0V) is the ground potential GND. The ground potential GND is described as ground potential GND (0V).

[0168] First, the operation of a single thyristor will be explained. Here, the cathode of the thyristor is set to 0V.

[0169] A thyristor in an open state, where no current flows between the anode and cathode, transitions to a closed state (conducts) when a potential higher than the threshold voltage is applied to the anode. Here, the threshold voltage of the thyristor is the value obtained by adding the gate potential to the forward voltage Vd (1.5V) of the pn junction. If the gate potential is 1.5V, the thyristor conducts when the anode becomes at a potential exceeding 3V.

[0170] When the thyristor is in the ON state, the gate of the thyristor is at a potential close to that of the cathode terminal. Here, since the cathode is 0V, the gate is set to 0V. Additionally, the anode of the thyristor in the ON state is at a potential close to that of the cathode plus the forward voltage Vd (1.5V) of the pn junction. Here, since the cathode is 0V, the anode of the thyristor in the ON state is at a potential close to 1.5V. Furthermore, the anode potential is set according to its relationship with the power supply that provides current to the thyristor in the ON state.

[0171] When the anode of a thyristor in the ON state becomes lower than the potential required to maintain the ON state (the aforementioned potential of approximately 1.5V), it switches to the OFF state (OFF).

[0172] On the other hand, when a potential higher than that required to maintain the on state is continuously applied to the anode of the thyristor in the on state, and a current (maintaining current) that can maintain the on state is supplied, the thyristor remains in the on state.

[0173] Next, the operation with the thyristor S and VCSEL stacked will be explained. Here, since the substrate potential Vsub is set to "L" (0V), the cathode of the VCSEL is 0V.

[0174] As mentioned above, if the signal is lit If the potential of I is greater than the threshold voltage, then the thyristor S is turned on. At this time, because the anode of the thyristor S is connected in series with the VCSEL, the forward voltage Vd (1.5V) of the VCSEL is increased, becoming a potential close to 3.0V. The potential of this anode is related to the lighting signal. The potential difference of I and the current limiting resistor RI (refer to) Figure 2 (Referring to the previous point) Due to the voltage drop caused by the current-limiting resistor RI, the corresponding current flows through the switched-on thyristor S and VCSEL, causing VCSEL to light up. On the other hand, in the lighting signal... When the potential of I is lower than the threshold voltage, the thyristor S is set to not conduct and remains in the off state.

[0175] A thyristor in the ON state can be kept ON by supplying a current greater than or equal to the current required to maintain the ON state (holding current). On the other hand, by setting the holding current below the holding current, it switches to the OFF state (OFF).

[0176] The voltage shown above is an example, and it varies depending on the emission wavelength and light intensity of the VCSEL. At this point, the lighting signal is adjusted. The potential of I ("H") is sufficient.

[0177] In the above, the setting thyristor S is used to control the lighting or non-lighting of the VCSEL (lighting control), but it can also be used as a component to increase the light emission of a pre-lit VCSEL by setting the setting thyristor S to be on.

[0178] (Operation of light source device 1)

[0179] Next, the operation of the light source device 1 will be explained.

[0180] Towards 1 terminal (refer to Figure 2 , Figure 3(a) The first transmission signal sent 1 and towards 2 terminals (refer to Figure 2 , Figure 3 The second transmission signal sent by (a) 2 is a signal with two potentials: "H" (5V) and "L" (0V). Furthermore, the first transmitted signal... 1 and second transmission signal 2. Repeat the waveform in units of two consecutive periods T (e.g., period T(1) and period T(2)).

[0181] First transmission signal 1 and second transmission signals 2. This set of transmission signals changes the on / off state of the transmission thyristor T in numerical order, designating the VCSEL with the same number as the on-state transmission thyristor T as the object of lighting control. As described above, when the transmission thyristor T is on, its gate Gt becomes 0V. Therefore, the gate Gs of the setting thyristor S becomes 0V because it is connected to the gate Gt of the transmission thyristor T. That is, the threshold voltage of the setting thyristor S becomes 1.5V. Furthermore, the voltage of the gate Gt of the transmission thyristor T adjacent to the right of the on-state transmission thyristor T increases by the voltage drop corresponding to the coupling diode D and the parasitic resistance (not shown) connected in series with the coupling diode D, and is set to 1.8V. That is, the threshold voltage of the adjacent right-hand setting thyristor S becomes 3.3V. The setting thyristor S to its right has a higher threshold voltage. Additionally, the gate Gt of the transmission thyristor T to the left of the on-state transmission thyristor T becomes 5V, and its threshold voltage becomes 6.5V. In this way, the threshold voltage of all set thyristors S except those with the same number as the on-state transmission thyristor T becomes 3.3V or higher.

[0182] Towards I terminal (refer to Figure 2 , Figure 3 (a) The lighting signal supplied I is a signal with two potentials: "H" (5V) and "L" (0V).

[0183] When the signal is lit When I changes from "L" to "H", the setting thyristor S corresponding to the VCSEL designated to be lit via the transmission signal is turned on, thereby lighting the VCSEL. When this setting thyristor S is turned on, as described above, the anode voltage becomes 3V, and the voltage of the lighting signal line 75 also becomes 3V. Therefore, setting thyristors S other than the one corresponding to the designated VCSEL are not turned on.

[0184] That is, by transmitting the thyristor T to the ON state, the VCSEL designated as the object for lighting control is given a lighting signal of "H" (5V). I turns on the setting thyristor S, which is connected in series with the VCSEL that is being controlled for illumination, and illuminates the VCSEL. That is, in the light-emitting chip 10, the VCSELs are illuminated sequentially by transmitting the on / off state of the transmission thyristor T. When the transmission thyristor T is turned on, its gate Gt changes, and the potential of the gate Gs of the setting thyristor S connected to its gate Gt changes, turning on the setting thyristor S. Here, the signal sent from the gate Gt of the transmission thyristor T to the gate Gs of the setting thyristor S, causing the setting thyristor S to turn on, is described as an on / off signal. By sequentially changing the on / off states, the illumination control of the VCSELs becomes easy.

[0185] In addition, the "L" (0V) light-up signal I will keep thyristor S in the off state and VCSEL in the non-lit state. That is, the lighting signal... I sets whether the VCSEL is lit or not.

[0186] In the light source device 1 of Embodiment 1, there are multiple elements (transmission thyristors T1 to T6, setting thyristors S1 to S6, VCSEL1 to VCSEL6), and the elements that are in the ON state among the multiple elements change one by one. Specifically, in the light source device 1 of Embodiment 1, the control unit 110 (see reference 110) controls the switching on and off states of the light source device 1. Figure 2 The lighting control is performed by turning on multiple transmission thyristors T1 to T6 in the transmission section 12 of the light-emitting chip 10. Furthermore, by turning on the transmission thyristors T1 to T6, multiple setting thyristors S1 to S6 in the light-emitting section 11 are turned on, designating the VCSELs to be lit. Moreover, by turning on each setting thyristor S, the VCSELs corresponding to that setting thyristor S are lit. In the light source device 1 of Embodiment 1, the transmission section 12 of the light-emitting chip 10 is an example of a driving section that drives multiple setting thyristors S to turn on.

[0187] Furthermore, in the light-emitting chip 10 of Embodiment 1, the portion of the light-emitting layer 82 of each VCSEL that actually emits light through the supply of current is the light-emitting region of each VCSEL.

[0188] In the light-emitting chip 10 of Embodiment 1, when the thyristor S is set to receive an on signal, it becomes capable of supplying current to the corresponding VCSEL. Moreover, when the thyristor S is set to the on state and is supplied with a current of the magnitude required for the VCSEL to emit light, the VCSEL lights up.

[0189] However, after the light-emitting chip 10 is controlled by the control unit 110 to supply an on signal to the setting thyristor S, enabling it to supply current to the corresponding VCSEL, the on signal to the setting thyristor S is sometimes stopped while maintaining the state in which the VCSEL can emit light. Even in such cases, by setting the thyristor S to the on state and supplying the VCSEL with the amount of current required for the VCSEL to emit light, the VCSEL can still emit light.

[0190] In Implementation 1, "causing the light-emitting element (VCSEL) to emit light by turning on the thyristor (setting thyristor S)" means that by turning on the setting thyristor S, the corresponding VCSEL emits light through the supply of current. Incidentally, after establishing a state where a turn-on signal can be supplied to the setting thyristor S to cause the VCSEL to emit light through the supply of current, the supply of the turn-on signal to the setting thyristor S can continue or be stopped when the VCSEL actually emits light while current is being supplied to it.

[0191] Figure 5 (a) and (b) are diagrams illustrating the leakage current in the light source device 1 of embodiment 1. Figure 5 (a) is a cross-sectional view when using a light-emitting chip 10′ without slot 350. Figure 5 (b) is a cross-sectional view using a light-emitting chip 10 with a slot 350. The transverse direction of the figure is... Figure 3 The +y direction shown in (a). Figure 5 The sectional view shown in (b) is the same as Figure 3 (b) is the same.

[0192] For use Figure 5 The case of the light-emitting chip 10′ shown in (a) will be explained.

[0193] When the thyristor S is turned on and current is applied to the series-connected set thyristor S and VCSEL, the current flows from the p-ohm electrode 321 to the substrate 80 and the back electrode 91.

[0194] The side surface of the light-emitting chip 10 is damaged during the dicing of the semiconductor wafer to separate it into chips. The side surface P( Figure 5The right-hand portion of (a) is an example of a cut surface. When the n-cathode (DBR) layer 81 and p-anode (DBR) layer 83 of the island 300 are exposed on the side surface P, which is the cut surface, the pn junction of the n-cathode (DBR) layer 81 and the p-anode (DBR) layer 83 is damaged due to the cut. When the pn junction is damaged, it may be unable to maintain the pn junction and become a short circuit. That is, the n-cathode (DBR) layer 81 and the p-anode (DBR) layer 83 cannot perform pn junction-based electrical separation, and the current may flow through the path of the damaged cut surface, i.e., the side surface P. More specifically, the current flowing from the p-ohm electrode 321 to the set thyristor S, VCSEL, is as follows: Figure 5 As shown by the arrow in (a), the leakage current path 360 flows through the interior of the substrate 80 to the side surface P of the light-emitting chip 10. Then, the leakage current flows along the side surface P of the light-emitting chip 10 to the p-anode (DBR) layer 83. The leakage current flowing along the side surface P of the light-emitting chip 10 to the p-anode (DBR) layer 83 flows to the reference potential terminal 340, which supplies the reference potential Vst to the transmission section 12. The region of the transmission section 12 connected to the reference potential terminal 340 and the substrate potential Vsub supplied to the substrate 80 are not electrically separated. Furthermore, the region of the transmission section 12 connected to the reference potential terminal 340 refers to the region of the p-anode (DBR) layer 83 connected to the reference potential terminal 340 of the transmission section 12, which is a continuous region within the island section 300.

[0195] When the current flowing to the reference potential terminal 340 continues, the current flowing from the p-ohm electrode 321 to the setting thyristor S and VCSEL may be maintained. It is possible that the setting thyristor S, which is connected to the light-emitting VCSEL, is maintained in the on state, and the setting thyristor S is not turned off, resulting in erroneous lighting.

[0196] Next, regarding the use Figure 5 The case of the light-emitting chip 10 shown in (b) will be explained.

[0197] like Figure 5 As shown in (b), in the light-emitting chip 10 having the slot 350 of the application embodiment 1, the area of ​​the transmission section 12 connected to the reference potential terminal 340 and the side surface P of the light-emitting chip 10 are electrically separated by the slot 350.

[0198] Even with the structure of the n-cathode (DBR) layer 81 and p-anode (DBR) layer 83 exposed on the island portion 300 of the light-emitting chip 10, the current flowing from the p-ohm electrode 321 to the setting thyristor S and VCSEL is as follows: Figure 5As shown by the dashed arrow in (b), leakage current path 360 is expected to flow from the p-anode (DBR) layer 83 to the reference potential terminal 340 via the side surface P of the light-emitting chip 10 through the interior of the substrate 80. However, due to the presence of the groove 350 that separates the p-anode (DBR) layer 83, the leakage current flowing through the p-anode (DBR) layer 83 to the reference potential terminal 340 is suppressed. That is, the formation of leakage current path 360 between the VCSEL, which serves as the light-emitting element, and the reference potential terminal 340 via the side surface of the substrate 80 is suppressed. The groove 350 suppresses the transmission portion 12 from extending to the outer periphery of the substrate 80 of the light-emitting chip 10. Furthermore, the leakage current path 360 is indicated by a dashed line to show the suppressed condition. Due to the groove 350, damage caused by cutting the cutting surface, i.e., the side surface P, of the light-emitting chip 10 is less likely. In addition, damage caused by cutting the cutting surface, i.e., the side surface P, of the light-emitting chip 10 is permissible.

[0199] Furthermore, to accommodate the slot 350, the area of ​​the light-emitting chip 10 can be slightly increased accordingly. Here, the transfer section 12 is provided on the structure, where the p-anode (DBR) layer 83 and n-cathode (DBR) layer 81 form a pn junction. This pn junction also separates the substrate potential Vsub of the substrate 80 (including the back electrode 91 and the n-cathode (DBR) layer 81) from the reference potential terminal 340 that supplies the reference potential Vst to the transfer section 12. Since the function of the transfer section 12 is already completed on the structure, it does not need to be provided as an island as its original function. However, the side of the light-emitting chip 10 is not sufficiently separated based on the pn junction due to damage, so separation is achieved through the slot 350.

[0200] Tank 350 is an example of a separation section.

[0201] Figure 6 (a) and (b) are examples of top view and cross-sectional view of the light-emitting chip 20 of the modified embodiment 1. Figure 6 (a) is an example of a top view layout of the light-emitting chip 20. Figure 6 (b) is Figure 6 An example of a cross-sectional view at the VIB-VIB line in (a). The light-emitting chip 20, except for the island portion 300, is... Figure 3 The light-emitting chip 10 shown in (a) and (b) is the same. Therefore, in the light-emitting chip 20, the part that is different from the light-emitting chip 10, namely the island 300, will be described.

[0202] exist Figure 3 In the light-emitting chip 10 shown in (a), the island portion 300 surrounds the transmission portion 12 (see reference). Figure 3The slot 350 is provided in the manner described in (a). By configuring the slot 350 to surround the transmission section 12, the reference potential Vst and the substrate potential Vsub can be reliably separated. The slot 350 only needs to be able to suppress leakage current flowing along the side of the light-emitting chip 10 to the p-anode (DBR) layer 83 and then flowing through the p-anode (DBR) layer 83 to the reference potential terminal 340 of the transmission section 12.

[0203] exist Figure 6 In the light-emitting chip 20 shown in (a) and (b), a groove 350 is provided along the outer periphery of the light-emitting chip 10. In the light-emitting chip 20, the portion along the outer periphery of the light-emitting chip 20 becomes a groove 350 formed by mesa etching down to the p-anode (DBR) layer 83. Furthermore, the area around the island portion 301 is also removed by mesa etching down to expose the p-anode (DBR) layer 83. Therefore, the area around the island portion 301 can also be considered as a groove 350.

[0204] Furthermore, the area of ​​the transmission section 12 connected to the reference potential terminal 340 and the side surface of the light-emitting chip 10 can also be electrically separated by implanting insulating ions into the semiconductor layer constituting the transmission section 12. Alternatively, the area of ​​the transmission section 12 connected to the reference potential terminal 340 and the side surface of the light-emitting chip 10 can be electrically separated by both a trench and insulating ions. The area implanted with insulating ions becomes an insulating area, thereby enabling the electrical separation of the area of ​​the transmission section 12 connected to the reference potential terminal 340 and the side surface of the substrate 80. The insulating ions are H-type relative to III-V compound semiconductors such as GaAs, AlGaAs, and AlAs. + .

[0205] When the region of the transmission section 12 connected to the reference potential terminal 340 and the side surface P of the light-emitting chip 10 are electrically separated by insulating ions, the insulating ions can interact with the formed Figure 3 In the case of the slot 350 of the light-emitting chip 10 shown in (a), it is injected in a manner that surrounds the transmission section 12, and it can also be injected along the... Figure 6 In the case shown in (a), the groove 350 is formed on the outer periphery of the light-emitting chip 20, and the ions are implanted along the outer periphery of the light-emitting chip 20. Insulating ions are implanted in such a way that they at least separate the p-anode (DBR) layer 83, or they can be implanted deeper.

[0206] The region implanted with insulating ions is another example of a separation section. Furthermore, the separation section can also be formed with a portion being a groove and a portion implanted with insulating ions. Alternatively, the separation section can be formed simply in a way that prevents leakage current paths 360 from forming in areas where they would easily form, even if it is not surrounded.

[0207] As explained above, the extension of the p-anode (DBR) layer 83, which exists in the lower part of the transmission section 12 connected to the reference potential terminal 340, to the outer periphery of the light-emitting chip 10 can be suppressed by using the separation part such as the groove 350.

[0208] [Implementation Method 2]

[0209] In Embodiment 1, the common-cathode light-emitting chip 10 was described. In Embodiment 2, the common-anode light-emitting chip 30 was described. Furthermore, the measuring device 100 is the same as in Embodiment 1.

[0210] Figure 7 This is an equivalent circuit diagram illustrating the light source device 2 in embodiment 2. Figure 7 In this context, the right direction of the paper is designated as the +x direction. Furthermore, parts having the same function as the light source device 1 in Application Embodiment 1 are labeled with the same symbols and their descriptions are omitted.

[0211] Figure 7 The light source device 2 shown includes a light-emitting chip 30 and a control unit 110.

[0212] (Control Department 110)

[0213] The control unit 110 includes a transmission signal generation unit 120, a lighting signal generation unit 140, a reference potential supply unit 160, and a power potential supply unit 170.

[0214] The transmission signal generation unit 120 generates a first transmission signal that sequentially switches the multiple transmission thyristors T in the transmission unit 12 to the on state. 1 and second transmission signals 2. The lighting signal generation unit 140 generates a lighting signal that supplies current to illuminate (light up) the multiple VCSELs. I. The reference potential supply unit 160 supplies the reference potential Vst to the transmission unit 12. The power supply potential supply unit 170 supplies the power supply potential Vga. They have the same function as the light source device 1, but the first transmission signal... 1. Second transmission signal 2. Light up the signal I. The absolute values ​​of the reference potential Vst and the power supply potential Vga are the same, but their signs are opposite. That is, it is a negative potential relative to the ground potential GND (0V).

[0215] (Light-emitting chip 30)

[0216] The light-emitting chip 30 includes a light-emitting unit 11 and a transmission unit 12. The light-emitting chip 30 includes... 1 terminal, 2 terminals, Vga terminal, The chip 30 has an I terminal and a Vst terminal. The Vsub terminal is a back electrode 91 disposed on the back side of the substrate 80. Figure 7 In the diagram, the symbol △ represents the terminal of the component connected to the substrate 80 (the same as the Vsub terminal).

[0217] The light-emitting unit 11 is equipped with a vertical-cavity surface-emitting laser (VCSEL). Figure 7 In the example shown, six VCSELs 1 to 6 are provided. The light-emitting unit 11 is provided with six setting thyristors S1 to S6. Furthermore, the cathodes of the VCSELs are connected to the anodes of the setting thyristors S.

[0218] The transmission unit 12 includes six transmission thyristors T1 to T6 and six lower diodes UD1 to UD6. Transmission thyristors T1 to T6 and lower diodes UD1 to UD6 with the same serial numbers are connected in series. Incidentally, with... Figure 3 (b) shows the same light-emitting chip 10, with the transmission thyristor T stacked on the lower diode UD formed on the substrate 80. The lower diodes UD1 to UD6 are integrally formed without separation. Furthermore, the lower diodes UD1 to UD6 are not operational. Figure 7 In the middle, the lower diodes UD1 to UD6 are represented by dashed lines.

[0219] The transmission unit 12 transmits thyristors T1 to T6 in pairs according to their numbering order, and each pair is equipped with coupling diodes D1 to D5.

[0220] The transmission unit 12 also includes power line resistors Rg1 to Rg6.

[0221] The transmission unit 12 is equipped with a start-up diode SD.

[0222] The transmission unit 12 is also equipped with a mechanism to prevent the supply of the first transmission signal as described later. 1. The first transmission signal line 72 and the second transmission signal supplied The second transmission signal line 73 of 2 is supplied with excess current through current limiting resistors R1 and R2.

[0223] The VCSEL1 to VCSEL6 of the light-emitting section 11, the setting thyristors S1 to S6, the transmission thyristors T1 to T6 of the transmission section 12, the lower diodes UD1 to UD6, the coupling diodes D1 to D5, and the power line resistors Rg1 to Rg6 are located in the light-emitting chip 30 from one side (the -x direction side). Figure 7 (left side) towards the other side (+x direction side, Figure 7 (On the right side) arranged in numerical order.

[0224] In Embodiment 2, similar to Embodiment 1, the number of VCSELs in the light-emitting section 11, the setting thyristor S, the transmission thyristor T in the transmission section 12, the lower diode UD, and the power line resistor Rg are each set to six. Furthermore, the number of coupling diodes D is five, one less than the number of transmission thyristors T. The number of VCSELs, setting thyristors S, transmission thyristors T, lower diode UD, power line resistor Rg, and coupling diodes D is not limited to the above; any predetermined number is acceptable. Additionally, the number of transmission thyristors T can be more than the number of VCSELs.

[0225] Next, the electrical connections of each component in the light-emitting chip 30 will be explained.

[0226] The anodes of VCSEL and the lower diode UD are each connected to the substrate 80 (common anode). These anodes are connected via the Vsub terminal, i.e., the back electrode 91, located on the back side of the substrate 80 (see reference). Figure 3 (b) is supplied with a substrate potential Vsub.

[0227] The cathodes of each of the VCSELs are connected to the anode of the set thyristor S. The cathodes of each of the lower diodes UD are connected to the anode of the transmission thyristor T. The anode of the transmission thyristor T (which is the same as the cathode of the lower diode UD) is connected to the reference potential line 74. The reference potential line 74 is connected to the Vst terminal. A reference potential Vst is supplied to this Vst terminal from the reference potential supply unit 160. Alternatively, the Vst terminal may be... Figure 3 Reference potential terminal 340 is shown in (a) and (b).

[0228] Along the arrangement of the transmission thyristors T, the anodes of the odd-numbered transmission thyristors T1, T3, and T5 are connected to the first transmission signal line 72. Furthermore, the first transmission signal line 72 is connected via a current limiting resistor R1 and... 1. Terminal connection. The signal generation unit 120 of the control unit 110 transmits signals to this... Terminal 1 supplies the first transmission signal 1.

[0229] On the other hand, along the arrangement of the transmission thyristors T, the anodes of even-numbered transmission thyristors T2, T4, and T6 are connected to the second transmission signal line 73. Furthermore, the second transmission signal line 73 is connected to... 2-terminal connection. The signal generation unit 120 of the control unit 110 transmits signals to this... Terminal 2 supplies the second transmission signal 2.

[0230] The cathodes of each thyristor S are connected to the lighting signal line 75. The lighting signal line 75 is connected to... The I-terminal is connected. The current limiting resistor RI, located on the outside of the light-emitting chip 30, supplies a lighting signal from the control unit 110 to the light-emitting chip 30 via the lighting signal generation unit 140. Terminal I supplies the lighting signal I. Light up the signal I supplies current to the VCSEL for lighting.

[0231] The gates Gt1 to Gt6 of each of the transmission thyristors T1 to T6 are connected one-to-one with the gates Gs1 to Gs6 of the corresponding design thyristors S1 to S6. Therefore, among the gates Gt1 to Gt6 and gates Gs1 to Gs6, the gates with the same number are electrically at the same potential.

[0232] Coupling diodes D1 to D5 are connected between each pair of gates Gt1 to Gt6 of the transmission thyristors T1 to T6, arranged in numerical order. That is, coupling diodes D1 to D5 are directly connected, sandwiched between each of the gates Gt1 to Gt6. Furthermore, the orientation of coupling diode D1 is aligned so that current flows from gate Gt1 to gate Gt2. The same applies to the other coupling diodes D2 to D5.

[0233] The gate Gt (gate Gs) of the transmission thyristor is connected to the power supply line 71 via a power supply line resistor Rg corresponding to that of the transmission thyristor T. The power supply line 71 is connected to the Vga terminal. The power supply potential Vga is supplied to the Vga terminal from the power supply potential supply unit 170 of the control unit 110.

[0234] The gate Gt1 of the transmission thyristor T is connected to the cathode of the start-up diode SD. On the other hand, the anode of the start-up diode SD is connected to the second transmission signal line 73.

[0235] The planar layout and cross-section of the light-emitting chip 30 Figure 3 The embodiments shown in (a) and (b) are the same as those in Implementation 1. Figure 3 In the light-emitting chip 10 shown in (b), a semiconductor stack consisting of an n-cathode (DBR) layer 81, a light-emitting layer 82, a p-anode (DBR) layer 83, a tunnel junction layer 84, an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 is sequentially stacked on an n-type substrate. In the light-emitting chip 30, a semiconductor stack consisting of a p-anode (DBR) layer, a light-emitting layer, an n-cathode (DBR) layer, a tunnel junction layer, a p-anode layer, an n-gate layer, a p-gate layer, and an n-cathode layer is sequentially stacked on a p-type substrate. That is, n and p are in an opposite relationship.

[0236] As described above, by setting the signal supplied from the control unit 110 to negative, the light-emitting chip 30 operates in the same manner as the light-emitting chip 10. The same applies to the slot 350.

[0237] [Implementation Method 3]

[0238] In the light-emitting chips 10, 20, and 30 shown in Embodiments 1 and 2, two adjacent transmission thyristors T in the transmission section 12 are coupled by a coupling diode D. In the light-emitting chip 40 shown in Embodiment 3, two adjacent transmission thyristors T in the transmission section 12 are connected by a coupling transistor Q. Furthermore, the measuring device 100 is the same as in Embodiment 1.

[0239] (Light source device 3)

[0240] Figure 8 This is an equivalent circuit diagram illustrating the light source device 3 in embodiment 3. Figure 8 In the middle, the right direction of the paper is set as the +x direction.

[0241] Figure 8 The light source device 3 shown includes a light-emitting chip 40 and a control unit 110. The light-emitting chip 40 is the same common cathode as the light-emitting chip 10 in Embodiment 1. The control unit 110 has the same structure as the control unit 110 of the light source device 1 in Embodiment 1, so it is referred to as the control unit 110.

[0242] (Light-emitting chip 40)

[0243] The light-emitting chip 40 includes a light-emitting section 11 and a transmission section 12. The light-emitting section 11 and the transmission section 12 in the light-emitting chip 40 have the same functions as those in the light-emitting chip 10. Therefore, in the light-emitting chip 40, they are also referred to as the light-emitting section 11 and the transmission section 12. The light-emitting chip 40 has the same functions as the light-emitting chip 10 in Embodiment 1. 1 terminal, 2 terminals, Vga terminal, The light-emitting chip 40 has an I terminal and a Vst terminal. The Vsub terminal is a back electrode 91 located on the back side of the substrate 80, similar to the light-emitting chip 10 (see later description). Figure 10 (b) Figure 8 In the diagram, the symbol ▽ represents the terminals of elements connected to the substrate 80 (same as the Vsub terminal). These terminals have the same structure as the light-emitting chip 10. The terminals other than the Vsub terminal are connected to the control unit 110 in the same way as the light source device 1 of Embodiment 1. Figure 8 In the diagram, a rectangle represents a resistor.

[0244] The light-emitting part 11, like the light-emitting chip 10 in Embodiment 1, has a plurality of VCSELs connected in series and a setting thyristor S. Figure 8The diagram shows six VCSELs (VCSEL1 to VCSEL6) and six setting thyristors S (setting thyristors S1 to S6). The anodes of the VCSELs with the same number are connected to the cathodes of the setting thyristors S. The six VCSELs and six setting thyristors S are arranged from one side (-x direction side) to the other side (+x direction side).

[0245] The transmission unit 12 includes multiple transmission thyristors T, coupling transistors Q, power line resistors Rg, current limiting resistors RL, and coupling resistors Rc. Figure 8 The diagram shows six transmission thyristors T (transmission thyristors T1 to T6) and six coupling transistors Q (coupling transistors Q1 to Q6). The transmission unit 12 includes six power line resistors Rg, six current limiting resistors RL, and six coupling resistors Rc, but these are not labeled. A transmission unit 12a is constituted by one transmission thyristor T, a coupling transistor Q, a power line resistor Rg, a current limiting resistor RL, and a coupling resistor Rc. The six transmission units 12a are arranged from one side (the -x direction side) towards the other side (the +x direction side). The transmission unit 12 has a power line resistor Rg and a start-up resistor Rs at one end (the -x direction side). The transmission unit 12 also includes current limiting resistors R1 and R2.

[0246] In the transmission unit 12a, the setting thyristor S is connected to the coupling transistor Q. The coupling transistor Q in the transmission unit 12a is connected to the setting thyristor S in the light-emitting section 11. Setting thyristors S1 to S6 are connected to coupling transistors Q1 to Q6 with the same number. Coupling transistors Q1 to Q6 are connected to setting thyristors S1 to S6 with the same number. Figure 8 The diagram shows six transmission thyristors T, coupling transistor Q, setting thyristor S, and VCSEL, but other numbers are also possible.

[0247] exist Figure 8 Although not explicitly stated, it is related to Figure 2 The light-emitting chip 10 of Embodiment 1 also has a lower diode UD in the transmission section 12 with the same structure as the VCSEL. The lower diode UD, like the light-emitting chip 10, does not operate.

[0248] In the light-emitting chip 40, the Vga terminal is connected to the power supply line 71, and the Vst terminal is connected to the reference potential line 74. Terminal 1 is connected to the first transmission signal line 72. Terminal 2 is connected to the second transmission signal line 73. Terminal I is connected to the lighting signal line 75. Terminal Vsub is grounded, becoming the ground potential GND (0V).

[0249] (Transmitting the operation of thyristor T, coupled transistor Q, VCSEL, and setting thyristor S)

[0250] Here, the basic operation of the light-emitting chip 40 will be explained.

[0251] The transmitting thyristor T and the setting thyristor S are npnp structure thyristors. The thyristor has an n-type cathode K (hereinafter referred to as cathode K, and the same applies below), a p-type gate Gp (p-gate Gp), an n-type gate Gn (n-gate Gn), and a p-type anode A (anode A). The setting thyristor S is not described because its p-gate Gp is ​​not used for control. In the light-emitting chip 10 of Embodiment 1, the gate of the transmitting thyristor T is designated as gate Gt, and the gate of the setting thyristor S is designated as gate Gs. In the light-emitting chip 40, because a p-type gate Gp (p-gate Gp) is used, it is divided into a p-type gate Gp (p-gate Gp) and an n-type gate Gn (n-gate Gn). The gate Gt of the transmitting thyristor T and the gate Gs of the setting thyristor S in the light-emitting chip 10 are equivalent to the n-gate Gn.

[0252] The coupled transistor Q is a multi-collector npn bipolar transistor. The coupled transistor Q has an n-type emitter E, a p-type base B, and n-type collectors Cf and Cs.

[0253] The symbols mentioned above are used interchangeably between thyristors and between coupled transistors. The same applies to the bipolar transistors that constitute the thyristors described later. However, as described later, the thyristor is constructed from a combination of a single-collector npn bipolar transistor and a single-collector pnp bipolar transistor (see below). Figure 9 (a) Therefore, it is expressed as emitter E, base B, and collector C. Hereinafter, even if the symbols are not marked in the figure, the expressions A, K, n gate Gn, p gate Gp, emitter E, base B, and collector C will be used.

[0254] The transmitting thyristor T, coupling transistor Q, setting thyristor S, and VCSEL are, for example, composed of a III-V compound semiconductor such as GaAs. As described above, the forward voltage (diffusion potential) Vd of the junction of this compound semiconductor is set to 1.5V. The saturation voltage Vc of the bipolar transistor composed of the compound semiconductor is set to 0.3V. Furthermore, the power supply potential Vga is set to 5V ("H" (5V)). First transmission signal 1. Second transmission signal 2 and lighting signal I is set as a signal with L level of 0V ("L" (0V)) and H level of 5V ("H" (5V)). Ground potential GND is ground potential GND (0V).

[0255] Figure 9(a) and (b) are diagrams illustrating the operation of the light-emitting chip 40 in implementation method 3. Figure 9 (a) is the equivalent circuit diagram. Figure 9 (b) is a partial cross-sectional view of the transmission thyristor T1 and the coupled transistor Q1. Figure 9 In (a), the transmission thyristor T2 is also shown.

[0256] like Figure 9 As shown in (a), the transmission thyristor T1 is composed of a combination of an npn bipolar transistor Tr1 (hereinafter referred to as npn transistor Tr1.) and a pnp bipolar transistor Tr2 (hereinafter referred to as pnp transistor Tr2.). The base B of the npn transistor Tr1 is connected to the collector C of the pnp transistor Tr2, and the collector C of the npn transistor Tr1 is connected to the base B of the pnp transistor Tr2. The emitter E of the npn transistor Tr1 is the cathode K of the transmission thyristor T1, the collector C of the npn transistor Tr1 (the base B of the pnp transistor Tr2) is the n gate Gn of the transmission thyristor T1, the collector C of the pnp transistor Tr2 (the base B of the npn transistor Tr1) is the p gate Gp of the transmission thyristor T1, and the emitter E of the pnp transistor Tr2 is the anode A of the transmission thyristor T1.

[0257] The cathode K of the transmission thyristor T1, i.e., the emitter E of the npn transistor Tr1, is connected to the reference potential line 74, which is connected to the Vst terminal supplied with the reference potential Vst. The anode A of the transmission thyristor T1, i.e., the emitter E of the pnp transistor Tr2, is connected to the first transmission signal line 72. The n gate Gn is connected to the junction of the series-connected start-up resistor Rs and the power supply line resistor Rg. The other side of the start-up resistor Rs (not the junction) is connected to the second transmission signal line 73. The other side of the power supply line resistor Rg (not the junction) is connected to the power supply line 71. The first transmission signal line 72 is connected to... One terminal connection supplies the first transmission signal. 1. The second transmission signal line 73 and Two-terminal connection, supplying a second transmission signal. 2. Power cord 71 is connected to the Vga terminal to supply power potential Vga.

[0258] In the coupling transistor Q1, which is an npn transistor, the base B is connected to the p-gate Gp of the transmission thyristor T1 (the base B of the npn transistor Tr1 and the collector C of the pnp transistor Tr2), and the emitter E is connected to the reference potential line 74. The collector Cf of the coupling transistor Q1 is connected to the power line 71 via a coupling resistor Rc and a power line resistor Rg connected in series. The connection point of the coupling resistor Rc and the power line resistor Rg is connected to the n-gate Gn of the transmission thyristor T2.

[0259] The npn transistor Tr1 and the coupling transistor Q1 in the transmission thyristor T1 form a current mirror circuit. A current proportional to the current flowing in the npn transistor Tr1 flows in the coupling transistor Q1.

[0260] The collector Cs of the coupling transistor Q1 is connected to the n-gate Gn of the setting thyristor S1, and is also connected to the power-on signal line 75 via the current-limiting resistor RL. The power-on signal line 75 is... Connect the I-terminal to supply the lighting signal. I.

[0261] As described above, VCSEL1 and the setting thyristor S1 are connected in series. The anode A of VCSEL1 is connected to the cathode K of the setting thyristor S1. The anode A of the setting thyristor S1 is connected to the lighting signal line 75. The cathode K of VCSEL1 is connected to the substrate 80 of the substrate potential Vsub.

[0262] The anode A of the transmitting thyristor T2 is connected to the second transmitting signal line 73. For example... Figure 8 As shown, the anode A of the odd-numbered transmission thyristors T is connected to the first transmission signal line 72, and the anode A of the even-numbered transmission thyristors T is connected to the second transmission signal line 73. Except for the connection relationships between the transmission thyristors T and the first transmission signal line 72 and the second transmission signal line 73, the connection relationships of the transmission thyristors T numbered 2 and above, the coupling transistor, the setting thyristor S, and the VCSEL are the same as those of the transmission thyristor T1, the coupling transistor Q1, the setting thyristor S1, and the VCSEL1.

[0263] (The operation of the transmission thyristor T)

[0264] The operation of the transmission thyristors T1 and T2 is explained.

[0265] Set the power supply potential Vga (power line 71) to 5V. Set the reference potential Vst (reference potential line 74) to ground potential GND (0V). Transmit the first signal. 1. Second transmission signal 2 and lighting signal I is set to "L" (0V). At this time, the npn transistor Tr1 and pnp transistor Tr2 constituting the transmission thyristor T1 are in the off state. The n-gate Gn of the transmission thyristor T1 is connected to the junction of the series-connected start-up resistor Rs and the power supply line resistor Rg. Moreover, the other side of the start-up resistor Rs (the side that is not the junction) is connected to the second transmission signal line 73 of "L" (0V), and the other side of the power supply line resistor Rg (the side that is not the junction) is connected to the 5V power supply line 71. Therefore, the n-gate Gn becomes the voltage of the voltage difference (5V) divided by the start-up resistor Rs and the power supply line resistor Rg. When the resistance ratio of the start-up resistor Rs to the power supply line resistor Rg is set to 1:5 as an example, the n-gate Gn becomes 0.83V. This state is described as the initial state.

[0266] Here, the first transmission signal is made 1 (First transmission signal line 72) changes from "L" (0V) to "H" (5V). The emitter E of the pnp transistor Tr2 of the transmission thyristor T1 becomes "H" (5V). The voltage difference (4.17V) between the emitter E ("H" (5V)) and the base B (p-gate Gp) (0.83V) becomes a forward voltage Vd (1.5V) or higher. Because the emitter E and base B are forward biased, the pnp transistor Tr2 changes from the off state to the on state. Thus, the collector C of the pnp transistor Tr2 (the base B of the npn transistor Tr1) becomes 4.7V, obtained by subtracting the saturation voltage Vc (0.3V) from the emitter E ("H" (5V)). The voltage difference (4.7V) between the emitter E (0V) and the base B (4.7V) of the npn transistor Tr1 becomes a forward voltage Vd (1.5V) or higher. Because the emitter (E) and base (B) are forward biased, the npn transistor Tr1 changes from the off state to the on state. Because the npn transistor Tr1 and the pnp transistor Tr2 in the transmission thyristor T1 are turned on, the transmission thyristor T1 changes from the off state to the on state (conducts).

[0267] In the initial state, when the first transmission signal When the voltage changes from "L" (0V) to "H" (5V), the transmission thyristor T1 is turned on, changing from the off state to the on state.

[0268] When the transmission thyristor T1 is turned on, the n-gate Gn in T1 becomes 0.3V of the saturation voltage Vc. The anode A becomes a voltage determined by adding the forward voltage Vd and the saturation voltage Vc (Vd+Vc) and the voltage drop caused by the internal resistance of the transmission thyristor T1. Here, the anode A is set to 1.9V. That is, when the transmission thyristor T1 is turned on, the first transmission signal line 72 changes from 5V to 1.9V. The p-gate Gp of the transmission thyristor T1 becomes 1.6V.

[0269] As explained above, for the transmission thyristor T1, if the voltage at the gate Gn is lower than the forward voltage Vd (1.5V) by more than one time compared to the voltage at the anode A, it is turned on. Furthermore, for the transmission thyristor T1, when the voltage at the first transmission signal line 72 (the voltage between the anode A and the cathode K) is lower than the aforementioned 1.9V, it is turned off. For example, when the anode A is "L" (0V), the voltage difference between the anode A and the cathode K becomes 0V, therefore the transmission thyristor T1 is turned off. On the other hand, if the voltage at the first transmission signal line 72 (the voltage difference between the anode A and the cathode K) is 1.9V or higher, the on-state of the transmission thyristor T1 is maintained. Therefore, 1.9V is described as the holding voltage. Furthermore, even if a holding voltage is applied, if the current used to maintain the transmission thyristor T1 in the on-state does not flow, the on-state of the transmission thyristor T1 is not maintained. The current used to maintain the on-state is described as the holding current.

[0270] Next, the operation of the coupling transistor Q1 will be explained.

[0271] If the transmitting thyristor T1 is off, then the npn transistor Tr1 is off. Therefore, the coupling transistor Q1 is also off. The emitter E of the coupling transistor Q1 is connected to the reference potential line 74. Because the reference potential Vst is set to ground potential GND (0V), the reference potential line 74 is ground potential GND (0V). Therefore, the emitter E is ground potential GND (0V). The collector Cf becomes the power supply potential Vga (5V) via the series-connected power line resistor Rg and coupling resistor Rc. In addition, the collector Cs becomes the lighting signal via the current limiting resistor RL. The potential (0V) of I ("L" (0V)).

[0272] When the transmission thyristor T1 is turned on, i.e., when the npn transistor Tr1 is in the ON state, as mentioned above, the p-gate Gp of the transmission thyristor T1 becomes 1.6V. Therefore, because the base B of the coupling transistor Q1 is connected to the p-gate Gp of the transmission thyristor T1, the emitter E and base B become forward biased, resulting in a forward voltage Vd (1.5V) or higher. The coupling transistor Q1 transitions from the OFF state to the ON state. The collector Cf becomes the saturation voltage Vc (0.3V) (the collector Cs will be described later). The connection point of the power line resistor Rg and the coupling resistor Rc (the n-gate Gn of the transmission thyristor T2) becomes the voltage difference (4.7V) between the power supply voltage (5V) of the power line 71 and the voltage (0.3V) of the collector Cf, divided by the power line resistor Rg and the coupling resistor Rc. When the resistance ratio of the power line resistor Rg to the coupling resistor Rc is set to 5:1 as an example, the connection point of the power line resistor Rg and the coupling resistor Rc (the n gate Gn of the transmission thyristor T2) becomes 1.08V.

[0273] The anode A of the transmitting thyristor T2 is connected to the second transmission signal. The second transmission signal line 73 of line 2 is connected. Because the second transmission signal... 2 is "L" (0V), so the transmitting thyristor T2 is not conducting. However, when the second transmitting signal... When the voltage changes from "L" (0V) to "H" (5V), the anode A of the transmission thyristor T2 becomes "H" (5V), and the voltage difference (3.92V) between it and the n-gate Gn (1.08V) becomes a forward voltage Vd (1.5V) or higher. That is, the n-gate Gn and anode A are forward biased, and the transmission thyristor T2 is turned on. Thus, the transmission thyristor T2 is activated by the first transmission signal. 1. Second transmission signal 2. The connection status is changed sequentially.

[0274] Next, the operation of setting thyristor S1 and VCSEL1 will be explained.

[0275] When the coupled transistor Q1 is turned on, the collectors Cs and Cf both become saturated voltage Vc (0.3V). The gate Gn of thyristor S1 is set to 0.3V because it is connected to the collector Cs of coupled transistor Q1.

[0276] Here, light up the signal. I changes from "L" (0V) to "H" (5V). The anode A of thyristor S1 is set to the supplied lighting signal. The illumination signal line 75 of I is connected. The anode A of thyristor S1 is set to "H" (5V). The cathode K of VCSEL1 is connected to the substrate 80 (Vsub terminal) which is set to ground potential GND (0V). Therefore, when the illumination signal... When I changes from "L" (0V) to "H" (5V), while applying "H" (5V) to the series connection of the setting thyristor S1 and VCSEL, a voltage difference (4.7V) is formed between the anode An and the gate Gn of the setting thyristor S1, and a forward bias is formed between the anode An and the gate Gn. As a result, the setting thyristor S1 is turned on, and current is supplied to VCSEL1 to light it up.

[0277] That is, power line 71 is set to power supply potential Vga (5V), reference potential Vst and substrate potential Vsub of reference potential line 74 are set to ground potential GND (0V), and the first transmission signal is transmitted. 1. Second transmission signal The state where 2 is "L" (0V) is the initial state. When it reaches the initial state, the transmitting thyristor T1 becomes capable of transitioning to the ON state. Here, when the first transmitting signal... When the first transmission signal line 72 changes from "L" (0V) to "H" (5V), the transmission thyristor T1 turns on, changing from the off state to the on state. When the transmission thyristor T1 turns on, the coupling transistor Q1 changes from the off state to the on state. Here, when the lighting signal... When signal line 75 (I) changes from "L" (0V) to "H" (5V), the anode An and gate Gn of thyristor S are forward biased, and VCSEL1 lights up. Additionally, when coupled transistor Q1 is turned on, the transmission thyristor T2 is able to switch to the on state. Furthermore, when the second transmission signal... 2. When the second transmission signal 73 changes from "L" (0V) to "H" (5V), the transmission thyristor T2 turns on. Furthermore, regarding the transmission thyristor T1, when the first transmission signal... When the first transmission signal line 73 changes from "H" (5V) to "L" (0V), the cathode K and anode A become 0V, and the transmission thyristor T1 is turned off. The other transmission thyristors T, coupling transistor Q, setting thyristor S and VCSEL also operate in the same way.

[0278] like Figure 9 As shown in (b), the light-emitting chip 40 is composed of a semiconductor stack consisting of multiple semiconductor layers (see below). Figure 10 (b)). The semiconductor stack is the same as the semiconductor stack of the light-emitting chip 10. Figure 9In (b), the portion of the p-anode (DBR) layer 83, tunnel junction layer 84, n-cathode layer 85, p-gate layer 86, n-gate layer 87, and p-anode layer 88 stacked together constituting the transmission thyristor T1 and the coupling transistor Q1 is shown. The transmission thyristor T1 is configured with n-cathode layer 85 as cathode K, p-gate layer 86 as p-gate Gp, n-gate layer 87 as n-gate Gn, and p-anode layer 88 as anode A. On the other hand, the coupling transistor Q1 is configured with n-cathode layer 85 as emitter E, p-gate layer 86 as base B, and n-gate layer 87 as collector Cf and Cs. Furthermore, the p-anode (DBR) layer 83 is connected to the Vst terminal (reference potential terminal 341) supplying the reference potential Vst to the transmission section 12. Moreover, the p-anode (DBR) layer 83, tunnel junction layer 84, and n-cathode layer 85 are at the same potential.

[0279] Here, the cathode K of the transmission thyristor T1 and the emitter E of the coupling transistor Q1 are electrically connected via the n-cathode layer 85. Similarly, the p-gate Gp of the transmission thyristor T1 and the base B of the coupling transistor Q1 are electrically connected via the p-gate layer 86. Furthermore, the n-gate Gn of the transmission thyristor T1 and the collectors Cf and Cs of the coupling transistor Q1 are both formed by the n-gate layer 87, but are separated. The same applies to the other transmission thyristors T and coupling transistors Q.

[0280] Figure 10 (a) and (b) are examples of top view and cross-sectional view of the light-emitting chip 40 according to embodiment 3. Figure 10 (a) is an example of a top view layout of the light-emitting chip 40. Figure 10 (b) is Figure 10 An example of a cross-sectional view at line XB-XB in (a). Figure 10 In (a) and (b), the protective layer is omitted. Figure 4 The protective layer 90) and the light-shielding layer ( Figure 4 The light-shielding layer is 95%. Additionally, in... Figure 10 In (b), the following is omitted. Figure 10 The wiring connections shown in (a) are as follows.

[0281] exist Figure 10 In (a), with Figure 8 The diagram shows the transmission thyristors T1-T4, coupling transistors Q1-Q4, setting thyristors S1-S4, and VCSELs 1-4 as the center. Figure 10 In (b), a cross section of the components of the thyristor S1, VCSEL1, transmission thyristor T1, coupling transistor Q1, coupling resistor Rc connected to coupling transistor Q1, and power line resistor Rg is shown.

[0282] like Figure 10As shown in (b), the light-emitting chip 40 is constructed by stacking an n-cathode (DBR) layer 81, a light-emitting layer 82, a p-anode (DBR) layer 83, a tunnel junction layer 84, an n-cathode layer 85, a p-gate layer 86, an n-gate layer 87, and a p-anode layer 88 on an n-type substrate 80. Furthermore, the transmission thyristor T, the coupling transistor Q, the setting thyristor S, the VCSEL, and other components are constructed from multiple islands separated by etching away a portion of the semiconductor layer. Hereinafter, the islands (islands 300, 361-367) will be described, focusing on island 361 where the setting thyristor S1 and VCSEL 1 are located, and island 362 where the transmission thyristor T1 and coupling transistor Q1 are located.

[0283] Island section 300 is a transmission section 12, which, like the light-emitting chip 10, is provided with a transmission thyristor T1, a coupling transistor Q1, etc. (see reference). Figure 8 In part of the substrate 80, the n-cathode (DBR) layer 81, the light-emitting layer 82, and the p-anode (DBR) layer 83 were not removed and remained on the substrate 80.

[0284] VCSEL1 and a setting thyristor S1 are stacked in island section 361. A [missing information - likely a typometer or similar unit] is provided in island section 362. Figure 9 The transmission thyristor T1 and coupling transistor Q1 are shown in (b). A current limiting resistor RL is provided in island 363, and a power line resistor Rg and a coupling resistor Rc are provided in island 364. A power line resistor Rg and a start-up resistor Rs are provided in island 365. A current limiting resistor R1 is provided in island 366, and a current limiting resistor R2 is provided in island 367.

[0285] The following is for reference Figure 10 (a) and (b) describe the planar layout and cross-section of the light-emitting chip 40.

[0286] The area surrounding the island 361 is etched to remove the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, tunnel junction layer 84, and p-anode (DBR) layer 83. A p-ohmic electrode 381, easily making ohmic contact with the p-type semiconductor layer, is provided on the p-anode layer 88. An n-ohmic electrode 391, easily making ohmic contact with the n-type semiconductor layer, is provided on the n-gate layer 87 exposed after removing the p-anode layer 88. The VCSEL1 designates the n-cathode (DBR) layer 81 as cathode K (see reference). Figure 9 In (a) of the thyristor S1, the light-emitting layer 82 is designated as the light-emitting layer, and the p-anode (DBR) layer 83 is designated as the anode A. The thyristor S1 is configured with the n-cathode layer 85 designated as the cathode K, the p-gate layer 86 designated as the p-gate Gp, the n-gate layer 87 designated as the n-gate Gn, and the p-anode layer 88 designated as the anode A. The n-ohm electrode 391 is the electrode that sets the n-gate Gn of the thyristor S1 (n-gate Gn electrode). Sometimes the n-ohm electrode 391 is referred to as the n-gate Gn.

[0287] like Figure 10 As shown in (b), a VCSEL1 is disposed on the substrate 80, and a setting thyristor S1 is disposed on the VCSEL1 via a tunnel junction layer 84. The tunnel junction layer 84 suppresses the situation where the p-anode (DBR) layer 83 of the VCSEL1 and the n-cathode layer 85 of the setting thyristor S1 are reverse biased and current cannot flow easily.

[0288] The island portion 361 is cylindrical except for the portion where the n-ohm electrode 391 is provided. The p-ohm electrode 381 is provided in a ring shape on the p-anode layer 88 of the cylindrical island portion 361. Furthermore, by oxidizing a portion of the semiconductor layer that forms the p-anode (DBR) layer 83 exposed by etching, a current blocking portion β is formed, which makes it difficult for current to flow in a ring shape. On the other hand, the unoxidized central portion becomes a current passing portion α, where current can flow easily. The current passing portion α and the current blocking portion β are the same as those of the light-emitting chip 10.

[0289] The area around island 362 is etched to remove the p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, and tunnel junction layer 84 (see reference). Figure 9 (b) A p-ohm electrode 382 is disposed on the p-anode layer 88. The p-ohm electrode 382 is an electrode connected to the anode A of the transmission thyristor T1 (anode A electrode), and is supplied with the first transmission signal. The first transmission signal line 72 of 1 is connected. N-ohm electrodes 392, 393, and 394 are provided on the n-gate layer 87 exposed after removing the p-anode layer 88. The n-ohm electrodes 392 and 394 are electrodes connected to the collectors Cs and Cf of the coupled transistor Q1 (collector Cf and Cs electrodes). Furthermore, the n-gate layer 87 between the p-ohm electrode 382 and the n-ohm electrodes 392 and 394 is removed (see reference). Figure 9 (b)). The n-ohm electrode 393 is an electrode (n-gate Gn electrode) connected to the n-gate Gn of the transmission thyristor T1.

[0290] The p-anode layer 88, n-gate layer 87, p-gate layer 86, n-cathode layer 85, and tunnel junction layer 84 are removed around the island 364 by etching. Three n-ohm electrodes 397, 398, and 399 are disposed on the n-gate layer 87 exposed after removing the p-anode layer 88. The n-gate layer 87 between n-ohm electrodes 397 and 398 is a coupling resistor Rc, and the n-gate layer 87 between n-ohm electrodes 398 and 399 is a power line resistor Rg.

[0291] Figure 10Island portion 363, not shown in (b), is constructed similarly to island portion 364, and two n-ohm electrodes 395 and 396 are provided on the exposed n-gate layer 87. The n-gate layer 87 between the two n-ohm electrodes 395 and 396 is a current limiting resistor RL.

[0292] Figure 10 The island portion 365, which is not shown in (b), is constructed in the same manner as the island portion 364, and is provided with a starting resistor Rs and a power line resistor Rg. Figure 10 The island portions 366 and 367, which are not shown in (b), are constructed in the same manner as the island portion 363, and are provided with current limiting resistors R1 and R2.

[0293] A p-ohm electrode 341 is provided on the exposed p-anode (DBR) layer 83 of the island portion 300. In the light-emitting chip 40, the portion of the light-emitting chip 40 along its outer periphery forms a trench 350 formed by mesa etching, which removes material down to the p-anode (DBR) layer 83. Furthermore, the area around the island portion 361 is also removed by mesa etching until the p-anode (DBR) layer 83 is exposed. Therefore, the area around the island portion 361 can also be considered as a trench 350. This trench 350 and... Figure 6 The light-emitting chip 20 shown is the same. The transmission section 12 of the light-emitting chip 40 is surrounded by the slot 350.

[0294] A back electrode 91 is provided on the back side of the n-type substrate 80.

[0295] Next, the connection relationship will be explained. Furthermore, in Figure 10 In (a), solid lines represent the wiring used for connection (power line 71, first transmission signal line 72, second transmission signal line 73, reference potential line 74, lighting signal line 75).

[0296] The island section 361 sets the anode A electrode of the thyristor S1, i.e., the p-ohm electrode 381, to the supplied lighting signal. The illumination signal line 75 of I is connected. The n-gate Gn electrode (n-ohm electrode 391) of the setting thyristor S1 in island 361 is connected to the collector Cs electrode (n-ohm electrode 392) of the coupling transistor Q1 in island 362. The n-ohm electrode 392 is connected to the n-ohm electrode 396 of the current limiting resistor RL provided in island 363. The n-ohm electrode 395 of island 363 is connected to the illumination signal line 75.

[0297] The anode A electrode, i.e., the p-ohm electrode 382, ​​of the transmission thyristor T1 in island 362 is connected to the first transmission signal line 72. The first transmission signal line 72 is connected to the first transmission signal supplied via a current limiting resistor R1 provided in island 366. 1 of Terminal 1 connection. The n-gate Gn electrode (n-ohm electrode 393) of the transmission thyristor T1 in island 362 is connected to the connection point (n-ohm electrode, unsigned) of the power line resistor Rg and the start-up resistor Rs provided in island 365. The collector Cf electrode (n-ohm electrode 394) of the coupling transistor Q1 in island 362 is connected to one of the n-ohm electrodes 397 in the coupling resistor Rc of island 364.

[0298] The other n-ohm electrode 398 in the coupling resistor Rc of island 364 is connected to the n-gate Gn electrode of the transmission thyristor T2, which is also an n-ohm electrode (unsigned). The other n-ohm electrode 399 in the power line resistor Rg of island 364 is connected to the power line 71 supplied with the power supply potential Vga.

[0299] One n-ohm electrode (unsigned) of the start-up resistor Rs of island 365 is connected to the second transmission signal line 73. The other n-ohm electrode (unsigned) of the power supply line resistor Rg of island 365 is connected to the power supply line 71. The second transmission signal line 73 is connected to the power supply line 71 via the current limiting resistor R2 provided in island 367. 2 of 2-terminal connection.

[0300] In addition, the first transmission signal line 72 is connected to the anode A electrode, i.e., the p-ohm electrode, of the odd-numbered transmission thyristor T, and the second transmission signal line 73 is connected to the anode A electrode, i.e., the p-ohm electrode, of the even-numbered transmission thyristor T.

[0301] The other transmission thyristor T, coupling transistor Q, setting thyristor S, and VCSEL are configured in the same way as transmission thyristor T1, coupling transistor Q1, setting thyristor S1, and VCSEL1.

[0302] The p-ohmic electrode 341 of the exposed p-anode (DBR) layer 83 of the island portion 300 is connected to the reference potential line 74. The reference potential line 74 is connected to the Vst terminal. A reference potential Vst is supplied to the Vst terminal. Alternatively, the p-ohmic electrode 341 may be used as either the Vst terminal or the reference potential terminal 341 without the reference potential line 74 and the Vst terminal. Hereinafter, the Vst terminal will be referred to as the reference potential terminal 341. The reference potential terminal 341 is another example of a reference potential terminal.

[0303] The back electrode 91 on the back side of the n-type substrate 80 is the Vsub terminal to which the substrate potential Vsub is supplied.

[0304] A transmission section 12, including a transmission thyristor T and a coupling transistor Q, is provided on a lower diode UD, which is composed of a p-anode (DBR) layer 83, a light-emitting layer 82, and an n-cathode (DBR) layer 81, similar to a VCSEL which serves as a light-emitting element. The lower diode UD is described as a structure equivalent to a light-emitting element. Furthermore, the p-anode (DBR) layer 83 and the n-cathode (DBR) layer 81 of the equivalent structure form a pn junction. Through this pn junction, the substrate potential Vsub of the substrate 80 (including the back electrode 91 and the n-cathode (DBR) layer 81) and the reference potential terminal 341 that supplies the reference potential Vst to the transmission section 12 are electrically separated.

[0305] As explained above, the light-emitting chip 40 is disposed on a substrate 80 made of a semiconductor. Furthermore, in Embodiment 3, a common-cathode type circuit is shown, but a common-anode type circuit can also be used. In the common-cathode type, an n-type substrate is used; conversely, in the common-anode type, a p-type substrate is used. The n-type and p-type are simply reversed compared to Embodiment 3.

[0306] [Implementation Method 4]

[0307] In embodiments 1, 2, and 3, the light-emitting chips 10, 20, 30, and 40 are described.

[0308] In Embodiment 4, the method for operating the light-emitting chips 10, 20, 30, and 40 will be described. Light-emitting chip 20 is a variation of light-emitting chip 10. Light-emitting chip 30 is a chip that reverses the polarity of light-emitting chip 10. Operating light-emitting chip 30 simply involves reversing the polarity of the potential in light-emitting chip 10. Light-emitting chip 40 changes the element (coupling element) that couples two adjacent transmission thyristors T of light-emitting chip 10 from a diode to a transistor, and can operate in the same way as light-emitting chip 10. Hereinafter, the method for operating light-emitting chip 10 will be described.

[0309] exist Figure 2 In the equivalent circuit diagram of the light source device 1, the substrate potential Vsub and the reference potential Vst are set to ground potential GND (0V), and the power supply potential Vga is set to "H" (5V). The first transmission signal... 1. Second transmission signal 2. Light up the signal I is set to a signal with "H" (5V) and "L" (0V). Therefore, a maximum voltage of 5V (equivalent to "H" (5V)) is applied to the series connection of the VCSEL and the setting thyristor S. Similarly, a maximum voltage of 5V (equivalent to "H" (5V)) is also applied to the transmission thyristor T. As described above, the transmission thyristor T operates in the same manner as the setting thyristor S. Therefore, the voltage applied to the transmission thyristor T can be 5V or less. When the reference potential Vst is set, for example, to 1V, the voltage applied to the transmission thyristor T is reduced to 4V. This suppresses the application of excessive voltage (overvoltage) to the transmission thyristor T.

[0310] right Figure 3 A reference potential Vst is applied to the reference potential terminal 340 shown in (b). The reference potential terminal 340 is connected to the p-anode (DBR) layer 83 of the transmission section 12. An n-cathode (DBR) layer 81 is located below the p-anode (DBR) layer 83, separated by the light-emitting layer 82. The p-anode (DBR) layer 83 and the n-cathode (DBR) layer 81 form a pn junction. The n-cathode (DBR) layer 81 becomes the substrate potential Vsub via the n-type substrate 80 and the back electrode 91. When the substrate potential Vsub is set to ground potential GND (0V) and the reference potential Vst is set to 1V, the p-anode (DBR) layer 83 and the n-cathode (DBR) layer 81 are in a forward bias state. However, the 1V set for the reference potential Vst is lower than the forward voltage Vd (1.5V) of the pn junction, and no current flows between the p-anode (DBR) layer 83 and the n-cathode (DBR) layer 81. Even when leakage current occurs at the cut surface (side P) of the light-emitting chip 10, the leakage current can be suppressed from flowing through the side P of the light-emitting chip 10 to the reference potential terminal 340 of the transmission section 12 by removing the trench 350 of the p-anode (DBR) layer 83. As described above, current flow from the n-cathode (DBR) layer 81 to the p-anode (DBR) layer 83 of the transmission section 12 via the pn junction is also suppressed. Furthermore, when the voltage applied to the reference potential Vst is greater than or equal to the forward voltage Vd (1.5V) of the pn junction, current will flow from the n-cathode (DBR) layer 81 to the p-anode (DBR) layer 83 of the transmission section 12. The voltage applied to the reference potential Vst is preferably lower than the forward voltage Vd (1.5V) of the pn junction.

[0311] Next, the method for operating the light-emitting chip 10 by low-side driving will be described. Low-side driving refers to a structure in which components such as MOS transistors are located downstream of the light-emitting element in the current path. Low-side driving can be performed when it is desired to operate the light-emitting element at a higher speed.

[0312] Figure 11 This is an equivalent circuit diagram illustrating the light source device 4 in embodiment 4. Figure 11In this embodiment, the right direction of the paper is defined as the +x direction. Furthermore, the measuring device 100 using the light source device 4 is the same as in Embodiment 1.

[0313] Figure 11 The light source device 4 shown includes a light-emitting chip 10 and a control unit 111. The light-emitting chip 10 is the same as the light-emitting chip 10 described in Embodiment 1. A part of the control unit 111 is different from the control unit 110 described in Embodiment 1. Hereinafter, the different parts will be described, and the same parts will be labeled with the same symbols and the description will be omitted.

[0314] (Control Department 111)

[0315] The control unit 111 includes a transmission signal generation unit 120, a lighting signal generation unit 140, a power supply potential supply unit 170, a driver unit 180, and a light emission potential supply unit 190.

[0316] The transmission signal generation unit 120 generates a first transmission signal that sequentially switches the multiple transmission thyristors T in the transmission unit 12 (described later) to the on state. 1 and second transmission signals 2. The lighting signal generation unit 140 generates a lighting signal that causes the plurality of VCSELs (described later) to light up (emit light). I. Power supply section 170 supplies power potential Vga. Driver section 180 connects to the lighting signal. I controls the luminous current accordingly. The luminous potential supply unit 190 supplies the luminous potential VLD.

[0317] The driver unit 180 includes a driver Drv. The driver Drv uses an NMOS transistor as a driver element, for example. A lighting signal is applied to the gate of the NMOS transistor. I is switched on / off. The source of the NMOS transistor is grounded, becoming the ground potential GND (0V). The drain is connected to the Vsub terminal of the LED chip 10 via the current limiting resistor RI. When the driver Drv is turned on, it supplies the ground potential GND (0V) to the Vsub terminal of the LED chip 10. Light-up signal. I is a signal that is switched between "H" (5V) and "L" (0V). "H" (5V) turns the driver Drv on, and "L" (0V) turns the driver Drv off. The source is one end of the driver Drv, and the drain is the other end of the driver Drv.

[0318] The light-emitting potential supply section 190 supplies power to the light-emitting chip 10. Terminal I supplies the light-emitting potential VLD. The light-emitting potential VLD is, for example, 5V ("H" (5V)). That is, in the light source device 4, the light-emitting chip 10... Terminal I was not supplied with a lighting signal. I is supplied with a light-emitting potential VLD. Furthermore, the VCSEL and the setting thyristor S are connected in series. A light-emitting potential VLD is applied to the anode of the setting thyristor S.

[0319] The Vst terminal of the reference potential Vst is grounded and becomes the ground potential GND (0V).

[0320] The operation of the light source device 4 will be explained.

[0321] Light up signal I is set to "L" (0V). Driver Drv is disconnected, and the Vsub terminal is not at ground potential GND (0V).

[0322] The operation of the transmission section 12 of the light-emitting chip 10 is the same as in Embodiment 1. When the transmission thyristor T is turned on, the gate Gt of the transmission thyristor T becomes "L" (0V). The gate Gs of the setting thyristor S connected to the gate Gt of the transmission thyristor T also becomes "L" (0V). As a result, the threshold voltage of the setting thyristor S becomes 1.5V. At this time, because the driver Drv is off, no current flows in the series-connected VCSEL and the setting thyristor S.

[0323] Here, when the signal is lit When I becomes "H" (5V), the driver Drv is turned on. The Sub terminal becomes ground potential GND (0V). Therefore, the setting thyristor S is turned on, and the VCSEL connected in series with the setting thyristor S lights up.

[0324] Figure 12 (a) and (b) are diagrams illustrating the leakage current in the light source device 4 of embodiment 4. Figure 12 (a) is a cross-sectional view when using a light-emitting chip 10′ without slot 350. Figure 12 (b) is a cross-sectional view using a light-emitting chip 10 with a slot 350. The transverse direction of the figure is... Figure 3 The +y direction shown in (a). Figure 12 The sectional view shown in (a) is the same as Figure 5 The sectional view shown in (a) is the same. Figure 12 The sectional view shown in (b) is the same as Figure 5 The sectional view shown in (b) is the same.

[0325] For use Figure 12 The case of the light-emitting chip 10' shown in (a) will be explained. Furthermore, Figure 12 (a) indicates that the drive Drv is changed from an on to an off state (in Figure 12 In (a), it is described as disconnected.

[0326] In the light source device 4, the substrate 80 (back electrode 91) of the light-emitting chip 10' is grounded (GND (0V)) via the driver Drv. When the driver Drv is turned on (light-up signal) When I is “H” (5V), the setting thyristor S is turned on, and current flows through the setting thyristor S and VCSEL connected in series. The current flows from the p-ohm electrode 321 to the substrate 80 and the back electrode 91, and then through the driver Drv to ground (GND (0V)).

[0327] At this time, when the side of the light-emitting chip 10' is damaged due to cutting, current flows through the interior of the substrate 80 to the side P of the light-emitting chip 10, and then along the side P of the light-emitting chip 10 to the p-anode (DBR) layer 83 of the transmission section 12. The p-anode (DBR) layer 83 of the transmission section 12 is grounded (GND (0V)) via the reference potential terminal 340. Incidentally, when the driver Drv is turned on, a path is formed from the p-ohm electrode 321 of the light-emitting potential VLD through the setting thyristor S, VCSEL and substrate 80 and through the driver Drv to ground (GND (0V)), and a leakage current path (leakage current path 360) is formed from the p-ohm electrode 321 of the light-emitting potential VLD through the setting thyristor S, VCSEL and substrate 80 and along the side P of the light-emitting chip 10' to the reference potential terminal 340 of the ground potential GND (0V).

[0328] Here, when the driver Drv is switched from on to off, the current flowing from the p-ohm electrode 321 of the light-emitting potential VLD through the setting thyristor S, VCSEL, and substrate 80, and through the driver Drv to ground (GND (0V)) is interrupted. However, the leakage current path 360, which flows from the p-ohm electrode 321 of the light-emitting potential VLD through the setting thyristor S, VCSEL, and substrate 80, along the side P of the light-emitting chip 10, to the reference potential terminal 340 of the ground potential GND (0V), is not interrupted and continues to flow. Incidentally, if the leakage current can maintain the lighting of the VCSEL, the VCSEL continues to light up. Even if the leakage current cannot continue to light up the VCSEL, if the setting thyristor S can be kept on, when other VCSELs are lit, the VCSEL connected to the setting thyristor S that is kept on also lights up along with the other VCSELs. That is, erroneous lighting occurs.

[0329] Next, regarding the use Figure 12 The case of the light-emitting chip 10 shown in (b) will be explained. Furthermore, Figure 12 (b) indicates that the driver Drv is changed from the on state to the off state (in Figure 12 In (b), it is described as disconnected.

[0330] When using the light-emitting chip 10 with slot 350, when the driver Drv is turned on, the path from the p-ohm electrode 321 of the light-emitting potential VLD through the setting thyristor S, VCSEL, and substrate 80, and then through the driver Drv to ground (GND (0V)) is the same as that of the light-emitting chip 10'. However, with Figure 12 Unlike the case shown in (a), the leakage current path 360 from the p-ohm electrode 321 of the light-emitting potential VLD, through the setting thyristor S, VCSEL, and substrate 80, and along the side P of the light-emitting chip 10, to the reference potential terminal 340 at ground potential GND (0V), is interrupted by the slot 350, and does not reach the p-anode (DBR) layer 83 of the transmission section 12, which is set to ground potential GND (0V) through the reference potential terminal 340. In the light-emitting chip 10 with the slot 350, even if the side P of the light-emitting chip 10 is damaged due to cutting, the leakage current path 360 will not be formed due to the slot 350 provided on the island 300. Therefore, the leakage current path 360 is indicated by a dashed line. The lit VCSEL is extinguished by setting the driver Drv to the off state. The setting thyristor S is suppressed and maintained in the on state.

[0331] As described above, the p-anode (DBR) layer 83 and the n-cathode (DBR) layer 81 of the transmission section 12 form a pn junction. The p-anode (DBR) layer 83 is grounded at GND (0V) via the reference potential terminal 340. On the other hand, the n-cathode (DBR) layer 81 is grounded at the same potential as the substrate 80 (including the back electrode 91) via the driver Drv (GND (0V)). By means of the driver Drv, the n-cathode (DBR) layer 81 is at least at a positive potential. The pn junction of the p-anode (DBR) layer 83 and the n-cathode (DBR) layer 81 is reverse biased. Incidentally, the region of the transmission section 12 connected to the reference potential terminal 340 (the p-anode (DBR) layer 83 of the island 300) is electrically isolated from the substrate 80 (including the back electrode 91).

[0332] By using a light-emitting chip 10 with a slot 350 provided in the island portion 300 where the transmission section 12 is provided, leakage current path 360 is suppressed in the light source device 4 that performs low-side driving on the light-emitting chip 10. As a result, erroneous lighting is suppressed.

[0333] As explained above, the reference potential terminal 340 described in Embodiments 1 and 2 and the reference potential terminal 341 described in Embodiment 3 can be set to a potential other than the ground potential GND (0V).

[0334] In the embodiments 1 to 4 described above, the transmission unit 12 was described as an example of a drive unit. Figure 2 , 7A coupling diode D is used in the transmission section 12 shown in Figure 8. Additionally, in... Figure 8 The transmission unit 12 shown uses a coupling transistor Q. These coupling elements are not limited to coupling diodes D and coupling transistors Q; other elements such as resistors and thyristors can also be used. The gate Gt of the transmission thyristor T and the gate Gs of the setting thyristor S are directly connected, but it is also possible to use diodes, resistors, etc., to connect the gate Gt of the transmission thyristor T and the gate Gs of the setting thyristor S.

[0335] In embodiments 1 to 4 described above, as an example of a driving unit, a transmission unit 12 is used that changes the on / off state of the transmission elements in an arranged order. However, a transmission unit that does not change the on / off state in an arranged order may also be used. The driving unit only needs to specify the light-emitting elements for which lighting control is performed.

[0336] By providing a separation section that prevents the driving section from extending to the outer periphery of the light-emitting chip, it is possible to make the substrate potential Vsub supplied to the light-emitting element different from the reference potential Vst of the driving section provided on a structure equivalent to the light-emitting element. This separation section is effective when a circuit with different potential references is formed on a semiconductor substrate.

[0337] (Postscript) (((1)))

[0339] A light-emitting device comprising: substrate; Multiple light-emitting elements are disposed on the substrate; Multiple thyristors, wherein the multiple thyristors cause each of the light-emitting elements to emit light or increase the amount of light emitted by the light-emitting element by being turned on; A driving unit, disposed on the substrate, drives each of the plurality of thyristors individually to switch them to an ON state; and A reference potential terminal supplies a preset reference potential to the driving unit, and the area of ​​the driving unit connected to the reference potential terminal is electrically separated from the side of the substrate. (((2)))

[0341] A light-emitting chip, which has: The substrate of a semiconductor; A plurality of light-emitting elements and a plurality of thyristors are disposed on the surface side of the substrate. The plurality of thyristors cause the light-emitting elements to emit light or increase the amount of light emitted by the light-emitting elements by being turned on. A driving unit is disposed on the surface side of the substrate, which drives the plurality of thyristors individually to switch them to the on state. A reference potential terminal, which supplies a preset reference potential to the driving unit; and A separation section that suppresses the flow of current between the reference potential terminal and the substrate. (((3)))

[0343] According to the light-emitting chip described in ((2)), wherein, The separation portion inhibits the extension of the driving portion to the outer periphery of the substrate. (((4)))

[0345] According to the light-emitting chip described in ((2)), wherein, The separation portion suppresses the formation of a current path via the side of the substrate between the light-emitting element and the reference potential terminal. (((5)))

[0347] According to the light-emitting chip described in ((2)), wherein, The thyristor is stacked on the light-emitting element disposed on the substrate. The driving unit is stacked on a structure equivalent to the light-emitting element disposed on the substrate. (((6)))

[0349] According to the light-emitting chip described in ((5)), wherein, The light-emitting element, the thyristor, and the driving unit are composed of a semiconductor laminate consisting of multiple semiconductor layers with different conductivity types. The separation section is a groove provided on the semiconductor laminate and / or a region in the semiconductor laminate in which insulating ions have been implanted. (((7)))

[0351] According to the light-emitting chip described in ((6)), wherein, The light-emitting element and the structure have a diode structure formed by stacking a p-type semiconductor layer as the anode and an n-type semiconductor layer as the cathode. The trench or the region implanted with the insulating ions extends from the surface side of the substrate at least to the side of the p-type semiconductor layer and n-type semiconductor layer constituting the diode structure away from the substrate. (((8)))

[0353] According to the light-emitting chip described in ((6)) or ((7)), wherein, The light-emitting element has a region where current cannot easily flow due to oxidation, i.e., a current-narrowing layer. The depth of the groove is the depth to reach the current-restricted layer. ((9)))

[0355] According to the light-emitting chip described in ((5)), wherein, The reference potential is applied to the side of the diode structure away from the substrate, which is formed by stacking a p-type semiconductor layer (which serves as the anode) and an n-type semiconductor layer (which serves as the cathode). (((10)))

[0357] According to the light-emitting chip described in ((6)), wherein, The groove and / or the area injected with the insulating ions are configured to surround the drive unit. (((11)))

[0359] According to the light-emitting chip described in ((2)), wherein, The driving unit sequentially changes the on / off state of the plurality of thyristors. (((12)))

[0361] A light-emitting chip, which has: The substrate of a semiconductor; A plurality of light-emitting elements are disposed on the surface side of the substrate; Multiple thyristors are stacked on the light-emitting element, which can make the light-emitting element emit light or increase the amount of light emitted by the light-emitting element by being turned on. A reference potential terminal, wherein the reference potential terminal is disposed on a structure equivalent to the light-emitting element, and is supplied with a preset reference potential; and The separation section suppresses the formation of a current path via the side of the substrate between the reference potential terminal and the light-emitting element. (((13)))

[0363] A light-emitting device comprising: The light-emitting chip described in any one of (((2))) to (((12))); and The driver has one end set to ground potential and the other end connected to the substrate of the light-emitting chip. It switches to the on state at a preset time to pass current for light emission to the light-emitting element. (((14)))

[0365] A measuring device comprising: The light-emitting device described in (((13))); and The acquisition unit acquires information related to the object based on reflected light obtained from the light emitted by the light-emitting device.

[0366] Based on the light-emitting device (((1))) and the light-emitting chip (((2)) and (((12))), compared with the structure in which leakage current from the light-emitting element may flow to the reference potential terminal of the driving part, it is possible to suppress erroneous lighting.

[0367] According to the light-emitting chip (((3))), compared with the case where the driving part extends to the outer periphery of the substrate, it is less susceptible to damage caused by cutting the side of the light-emitting chip.

[0368] According to the light-emitting chip (((4))), damage caused by cutting is permissible.

[0369] According to the light-emitting chip (((5))), compared with the case where thyristors are not stacked on the light-emitting element, the light-emitting elements of the light-emitting chip can be arranged at a high density.

[0370] According to the light-emitting chip ((6)), the driving part and the cutting surface can be electrically separated.

[0371] According to the light-emitting chip (((7))), the effect of electrically separating the driving part and the cutting surface can be improved.

[0372] According to the light-emitting chip (((8))), the separation part can be formed using the same process as the formation of the current blocking part.

[0373] According to the light-emitting chip ((9)), electrical separation can be achieved through the pn junction.

[0374] According to the light-emitting chip (((10))), compared with the case where the driving part is not surrounded, the reference potential and the substrate potential can be reliably separated.

[0375] According to the light-emitting chip (((11))), compared with the case where the on state is not changed sequentially, the lighting control of the light-emitting element becomes easier.

[0376] According to the light-emitting device (((13))), compared with high-side driving, the light-emitting element can operate at a higher speed.

[0377] According to the measuring device of (((14))), a measuring device capable of performing three-dimensional measurement is provided.

[0378] This application is based on Japanese patent application filed on January 24, 2024 (Japanese Patent Application No. 2024-009051) and Japanese patent application filed on December 23, 2024 (Japanese Patent Application No. 2024-226415).

Claims

1. A light-emitting device, comprising: substrate; Multiple light-emitting elements are disposed on the substrate; Multiple thyristors, wherein the multiple thyristors cause each of the light-emitting elements to emit light or increase the amount of light emitted by the light-emitting element by being turned on; A driving unit is disposed on the substrate and drives the plurality of thyristors individually to switch them to the on state. as well as A reference potential terminal supplies a preset reference potential to the driving unit, and the area of ​​the driving unit connected to the reference potential terminal is electrically separated from the side of the substrate.

2. A light-emitting chip, comprising: Semiconductor substrate; A plurality of light-emitting elements and a plurality of thyristors are disposed on the surface side of the substrate. The plurality of thyristors cause the light-emitting elements to emit light or increase the amount of light emitted by the light-emitting elements by being turned on. A driving unit is disposed on the surface side of the substrate, which drives the plurality of thyristors individually to switch them to the on state. A reference potential terminal supplies a preset reference potential to the driving unit; as well as A separation section that suppresses the flow of current between the reference potential terminal and the substrate.

3. The light-emitting chip according to claim 2, wherein, The separation portion inhibits the extension of the driving portion to the outer periphery of the substrate.

4. The light-emitting chip according to claim 2, wherein, The separation portion suppresses the formation of a current path via the side of the substrate between the light-emitting element and the reference potential terminal.

5. The light-emitting chip according to claim 2, wherein, The thyristor is stacked on the light-emitting element disposed on the substrate. The driving unit is stacked on a structure equivalent to the light-emitting element disposed on the substrate.

6. The light-emitting chip according to claim 5, wherein, The light-emitting element, the thyristor, and the driving unit are composed of a semiconductor laminate consisting of multiple semiconductor layers with different conductivity types. The separation section is a groove provided on the semiconductor laminate and / or a region in the semiconductor laminate in which insulating ions have been implanted.

7. The light-emitting chip according to claim 6, wherein, The light-emitting element and the structure have a diode structure formed by stacking a p-type semiconductor layer as the anode and an n-type semiconductor layer as the cathode. The trench or the region implanted with the insulating ions extends from the surface side of the substrate at least to the side of the p-type semiconductor layer and n-type semiconductor layer constituting the diode structure away from the substrate.

8. The light-emitting chip according to claim 6 or 7, wherein, The light-emitting element has a region where current cannot easily flow due to oxidation, i.e., a current-narrowing layer. The depth of the groove is the depth to reach the current-restricted layer.

9. The light-emitting chip according to claim 5, wherein, The reference potential is applied to the side of the diode structure away from the substrate, which is formed by stacking a p-type semiconductor layer (which serves as the anode) and an n-type semiconductor layer (which serves as the cathode).

10. The light-emitting chip according to claim 6, wherein, The groove and / or the area injected with the insulating ions are configured to surround the drive unit.

11. The light-emitting chip according to claim 2, wherein, The driving unit sequentially changes the on / off state of the plurality of thyristors.

12. A light-emitting chip, comprising: Semiconductor substrate; A plurality of light-emitting elements are disposed on the surface side of the substrate; Multiple thyristors are stacked on the light-emitting element, which can make the light-emitting element emit light or increase the amount of light emitted by the light-emitting element by being turned on. A reference potential terminal is disposed on a structure equivalent to the light-emitting element and is supplied with a preset reference potential. as well as The separation section suppresses the formation of a current path via the side of the substrate between the reference potential terminal and the light-emitting element.

13. A light-emitting device comprising: The light-emitting chip according to any one of claims 2 to 12; and The driver has one end set to ground potential and the other end connected to the substrate of the light-emitting chip. It switches to the on state at a preset time to pass current for light emission to the light-emitting element.

14. A measuring device comprising: The light-emitting device according to claim 13; and The acquisition unit acquires information related to the object based on reflected light obtained from light from the light-emitting device reflected by the object.

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