Preparation method of ceramic plate, ceramic plate and electronic equipment

Abstract

The invention provides a preparation method of a ceramic plate, the ceramic plate and electronic equipment. The preparation method of the ceramic plate comprises the following steps: preparing a ceramic substrate with a first thickness; carrying out corrosion treatment on the surface of the ceramic substrate to form a ceramic corrosion plate with a second thickness; wherein the second thickness is smaller than or equal to the first thickness; and carrying out first processing treatment on the surface of the ceramic corrosion plate to reduce the thickness of the ceramic corrosion plate from the second thickness to a third thickness so as to form the ceramic plate. According to the preparation method of the ceramic plate, the ceramic plate and the electronic equipment, the machining cutting force can be reduced, and the thickness of the ceramic plate is reduced.

Description

Technical Field

[0001] This application relates to the field of electronic technology, specifically to a method for preparing a ceramic plate, the ceramic plate, and an electronic device. Background Technology

[0002] Ultra-thin ceramic plates can be used in electronic fields such as fingerprint recognition, semiconductor heat dissipation, and circuit board packaging. In related technologies, ceramic plates with a thickness of less than 0.07mm to 0.08mm can no longer withstand the cutting forces of processing equipment and are prone to breakage, which prevents the thickness of ceramic plates from being further reduced. Summary of the Invention

[0003] This application provides a method for preparing a ceramic plate that can reduce machining cutting forces and achieve further reduction in thickness, as well as the ceramic plate and electronic device.

[0004] On the one hand, this application provides a method for preparing a ceramic plate, comprising:

[0005] Prepare a ceramic substrate of the first thickness;

[0006] The surface of the ceramic substrate is etched to form a ceramic etched plate of a second thickness; wherein the second thickness is less than or equal to the first thickness;

[0007] The surface of the ceramic etched plate is subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness, so as to form a ceramic plate.

[0008] On the other hand, this application also provides a ceramic plate, which is prepared using the ceramic plate preparation method described above.

[0009] In another aspect, this application also provides an electronic device, including a device body and the ceramic plate. The device body includes a housing and an electronic component disposed within the housing. The housing includes a mid-frame and the ceramic plate. The ceramic plate is connected to the mid-frame. And / or, the electronic component includes an electronic module and the ceramic plate. The ceramic plate is used to support or protect the electronic module.

[0010] The method for preparing ceramic plates provided in this application firstly involves etching the surface of a ceramic substrate to reduce its surface hardness. Then, a first processing treatment is performed on the surface of the etched ceramic plate to reduce the cutting force borne by the etched ceramic plate during the first processing treatment, thereby enabling the preparation of thinner ceramic plates. Attached Figure Description

[0011] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below.

[0012] Figure 1 A schematic flowchart illustrating a method for preparing a ceramic plate according to an embodiment of this application;

[0013] Figure 2 for Figure 1 The method for preparing the ceramic plate shown also includes a flowchart of step S40.

[0014] Figure 3 for Figure 1 The flowchart of the method for preparing the ceramic plate shown includes steps S101 and S102 in step S10.

[0015] Figure 4 for Figure 3 The flowchart of the method for preparing the ceramic plate shown includes steps S110 and S112 in step S101.

[0016] Figure 5 for Figure 4 The method for preparing the ceramic plate shown also includes a flowchart of step S111.

[0017] Figure 6 for Figure 5 The method for preparing the ceramic plate shown also includes a flowchart of step S103.

[0018] Figure 7 This is a schematic diagram of the structure of a ceramic plate provided in an embodiment of this application;

[0019] Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0020] The technical solutions provided in this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the embodiments described in this application are only a part of the embodiments, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments described in this application without creative effort are within the protection scope of this application.

[0021] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment to other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0022] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0023] like Figure 1 As shown, Figure 1 This is a schematic flowchart illustrating a method for preparing a ceramic plate according to an embodiment of this application. The method for preparing the ceramic plate includes, but is not limited to, the following steps: S10, S20, and S30.

[0024] S10: Prepare a ceramic substrate of the first thickness.

[0025] S20: The surface of the ceramic substrate is etched to form a ceramic etched plate of a second thickness; wherein the second thickness is less than or equal to the first thickness.

[0026] S30: The surface of the ceramic etched plate is subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness, so as to form a ceramic plate.

[0027] Understandably, the thickness of the ceramic substrate is a first thickness. The thickness of the ceramic etched plate is a second thickness. The thickness of the ceramic plate is a third thickness. This application does not specifically limit the first thickness. In one possible embodiment, the first thickness may be greater than or equal to 0.08 mm. Since the surface of the ceramic substrate is etched during the process of forming the ceramic etched plate from the ceramic substrate, the second thickness is less than or equal to the first thickness. Since the thickness of the ceramic etched plate is reduced from the second thickness to the third thickness during the process of forming the ceramic plate from the ceramic etched plate, the third thickness is less than the second thickness. In the embodiments of this application, the difference between the second thickness and the third thickness is greater than the difference between the first thickness and the second thickness.

[0028] This application does not specifically limit the shape of the ceramic substrate. For example, the shape of the ceramic substrate can be approximately circular, elliptical, square, rectangular, other polygonal, or irregular. The specific methods for preparing the ceramic substrate of the first thickness in step S10 include, but are not limited to, preparing the ceramic substrate of the first thickness by means of blanking and sintering; or, preparing the ceramic substrate of the first thickness by means of blanking, sintering, and one or more grinding processes; or, preparing the ceramic substrate of the first thickness by means of blanking, sintering, correction, and one or more grinding processes; or, preparing the ceramic substrate of the first thickness by means of blanking, sintering, correction, one or more grinding processes, and one or more polishing processes.

[0029] In step S20, the etching treatment of the ceramic substrate surface can be performed on one surface of the ceramic substrate; or on multiple surfaces of the ceramic substrate; or on all surfaces of the ceramic substrate. Etching the surface of the ceramic substrate can reduce its surface hardness. It is understood that the surface hardness of the etched ceramic plate is less than the surface hardness of the ceramic substrate. Surface hardness refers to the ability to resist the indentation of a hard object.

[0030] Step S30 involves a first processing treatment on the surface of the ceramic etched plate, including but not limited to grinding and / or polishing. The purpose of this first processing treatment is to further reduce the thickness of the ceramic etched plate to form a ceramic plate.

[0031] The method for preparing ceramic plates provided in this application firstly involves etching the surface of a ceramic substrate to reduce its surface hardness. Then, a first processing treatment is performed on the surface of the etched ceramic plate to reduce the cutting force borne by the etched ceramic plate during the first processing treatment, thereby enabling the preparation of thinner ceramic plates.

[0032] Furthermore, this application improves the preparation method of ceramic plates, thereby achieving a further reduction in the thickness of the ceramic plates, which can effectively reduce costs compared to improving the processing equipment for preparing ceramic plates.

[0033] In one possible embodiment, the third thickness is less than or equal to 0.08 mm. Optionally, the third thickness is greater than or equal to 0.04 mm and less than or equal to 0.08 mm. For example, the third thickness can be between 0.04 mm and 0.06 mm. Exemplarily, the third thickness is 0.04 mm, or 0.045 mm, or 0.05 mm, or 0.055 mm, or 0.06 mm.

[0034] By making the third thickness less than or equal to 0.08 mm, ultra-thin ceramic plates can be prepared, which is beneficial to expanding the application range of ceramic plates.

[0035] In one possible embodiment, the etching process on the surface of the ceramic substrate in step S20 includes, but is not limited to, the following step S201.

[0036] S201: Place the ceramic substrate in the etching solution and maintain it for a preset time.

[0037] The corrosive solution includes one or more of the following: hydrofluoric acid, nitric acid, oxalic acid, acetic acid, hydrochloric acid, sulfuric acid, and carbonic acid.

[0038] This application does not impose a specific limitation on the preset time. The preset time can be flexibly selected based on factors such as the corrosiveness of the etching solution, the material of the ceramic substrate, the thickness of the ceramic substrate, and the size of the ceramic substrate. In one possible embodiment, the preset time can be greater than or equal to one hour.

[0039] Optionally, the corrosive solution includes one of hydrofluoric acid, nitric acid, oxalic acid, acetic acid, hydrochloric acid, sulfuric acid, and carbonic acid; or, the corrosive solution includes at least two of hydrofluoric acid, nitric acid, oxalic acid, acetic acid, hydrochloric acid, sulfuric acid, and carbonic acid.

[0040] Placing the ceramic substrate in the etching solution allows for the simultaneous etching of multiple surfaces of the ceramic substrate, thereby improving the efficiency of etching the ceramic substrate and facilitating the initial processing of multiple surfaces of the ceramic etching plate in the subsequent step S30.

[0041] In one possible embodiment, step S201 described above includes, but is not limited to, step S210.

[0042] S210: Heat the etching solution to a preset temperature, place the ceramic substrate in the etching solution, and maintain it for a preset time.

[0043] The corrosion solution comprises ammonium fluoride powder, nitric acid solution, at least one surfactant, and water.

[0044] In this embodiment, the preset temperature range can be 40℃ to 60℃. For example, the preset temperature can be 40℃, 45℃, 50℃, 55℃, 58℃, or 60℃. The preset time range can be 4 hours to 6 hours. For example, the preset time can be 4 hours, 4.5 hours, 4.8 hours, 5 hours, 5.5 hours, or 6 hours.

[0045] In this embodiment, the mass fraction of the nitric acid solution can range from 68% to 70%. In one possible embodiment, the mass ratio of ammonium fluoride powder, nitric acid solution, surfactant, and water can be 20:10:1:50, that is, the etching solution may include 20 parts by mass of ammonium fluoride powder, 10 parts by mass of nitric acid solution, 1 part by mass of surfactant, and 50 parts by mass of water. The mass ratio of the etching solution in this embodiment has better etching efficiency for ceramic substrates.

[0046] By including ammonium fluoride powder and nitric acid solution in the etching solution, the ammonium fluoride ionizes and reacts with hydrogen ions in the nitric acid solution to form hydrogen fluoride. Hydrogen fluoride has strong oxidizing properties, which can accelerate the etching of the ceramic substrate, thereby improving the efficiency of surface etching treatment of the ceramic substrate. Furthermore, since the etching solution generates hydrogen fluoride through the reaction of ammonium fluoride powder and nitric acid solution, it reduces the harm to workers compared to techniques that directly use hydrogen fluoride as the etching solution.

[0047] The surfactant includes, but is not limited to, sodium dodecylbenzenesulfonate or sodium dodecylbenzene. By including at least one surfactant in the etching solution, the surface activity of the ceramic substrate can be increased, thereby accelerating the etching of the ceramic substrate.

[0048] In another possible embodiment, the etching treatment of the surface of the ceramic substrate in step S20 above includes, but is not limited to, the following step S202.

[0049] S202: The surface of the ceramic substrate is etched to make the surface hardness of the ceramic substrate less than or equal to 1200HV.

[0050] HV stands for Vickers hardness, which is determined by pressing a pyramidal diamond indenter into the material surface under a certain load and with a 136° angle between the indenters. After holding the indentation for a specified time, the diagonal length of the indentation is measured, and the load value is divided by the surface area of ​​the indentation. The unit is N / mm². 2 .

[0051] Optionally, after etching the surface of the ceramic substrate, the surface hardness of the ceramic substrate can be greater than or equal to 800 HV and less than or equal to 1200 HV. For example, after etching the surface of the ceramic substrate, the surface hardness of the ceramic substrate can be between 900 HV and 1000 HV. Exemplarily, after etching the surface of the ceramic substrate, the surface hardness of the ceramic substrate can be 900 HV, 920 HV, 950 HV, 980 HV, or 1000 HV.

[0052] By etching the surface of the ceramic substrate to make its surface hardness less than or equal to 1200 HV, the thickness of the prepared ceramic plate can be reduced to less than 0.08 mm during the first processing of the surface of the etched ceramic plate, without the ceramic substrate breaking due to its inability to withstand the cutting force of the processing equipment.

[0053] In one possible embodiment, such as Figure 2 As shown, before step S30, the method for preparing the ceramic plate may further include the following step S40.

[0054] S40: Clean the ceramic corrosion plate.

[0055] This application does not specify the cleaning equipment or cleaning time for cleaning ceramic etched plates. Optionally, the ceramic etched plates can be cleaned using an ultrasonic cleaner. After cleaning, the ceramic etched plates can be dried.

[0056] Cleaning the ceramic etching plate can reduce the amount of residual etching solution on the plate, thus preventing the residual solution from corroding the processing equipment during the first processing stage.

[0057] The ceramic etching plate has a first etching surface and a second etching surface arranged opposite to each other along its thickness direction on its surface. The first processing of the surface of the ceramic etching plate in step S30, reducing its thickness from the second thickness to a third thickness, includes, but is not limited to, the following step S301.

[0058] S301: Perform a first processing on the first etched surface and / or the second etched surface to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness.

[0059] Optionally, the first etched surface is subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness; or, the second etched surface is subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness; or, the first etched surface and the second etched surface are subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness.

[0060] In this process, either the first or second etched surface undergoes a first processing treatment, i.e., the thickness of the ceramic etched plate is reduced through a single-sided processing technique. Alternatively, both the first and second etched surfaces undergo a first processing treatment, i.e., the thickness of the ceramic etched plate is reduced through a double-sided processing technique.

[0061] The first processing of the first etched surface and the second etched surface may include performing the first processing of the first etched surface and the second etched surface separately, or it may include performing the first processing of the first etched surface and the second etched surface simultaneously.

[0062] In the embodiment where the first and second etched surfaces are subjected to the first processing, the thickness of the ceramic etched plate can be reduced more efficiently and quickly, and stress concentration on one side can be avoided.

[0063] In one possible embodiment, step S301 may include, but is not limited to, the following step S310.

[0064] S310: Simultaneously perform a first processing on the first corrosion surface and the second corrosion surface to reduce the thickness of the ceramic corrosion plate from the second thickness to the third thickness.

[0065] This embodiment requires the ceramic etched plate to undergo a first processing step using two grinding discs and / or two polishing discs. Specifically, in embodiments where the first processing step includes grinding, one grinding disc grinds the first etched surface, and the other grinding disc grinds the second etched surface; the grinding of the first and second etched surfaces is performed simultaneously. In embodiments where the first processing step includes polishing, one polishing disc polishes the first etched surface, and the other polishing disc polishes the second etched surface; the polishing of the first and second etched surfaces is performed simultaneously.

[0066] When processing both sides separately, the ceramic etched plate is prone to stress imbalance due to the single-sided stress during each processing step, leading to warping. Furthermore, controlling the thinning thickness on each side is difficult, resulting in uneven thinning. Therefore, this embodiment, by simultaneously processing the first and second etched surfaces, achieves uniform thinning on both sides of the ceramic etched plate, balances stress, and prevents warping of the prepared ceramic plate.

[0067] In one possible embodiment, step S310 includes, but is not limited to, the following step S3101.

[0068] S3101: Simultaneously perform a first grinding process on the first corrosion surface and the second corrosion surface to reduce the thickness of the ceramic corrosion plate from the second thickness to the third thickness.

[0069] Wherein, the thickness of the planetary disk in the first grinding process is less than or equal to the third thickness.

[0070] Optionally, the third thickness can range from 0.04 mm to 0.06 mm. For example, the third thickness can be 0.04 mm, 0.044 mm, 0.047 mm, 0.049 mm, 0.05 mm, 0.052 mm, 0.055 mm, 0.058 mm, or 0.06 mm. The thickness of the planetary disk in the first grinding process can be equal to the third thickness. For example, when the third thickness is 0.04 mm, the thickness of the planetary disk in the first grinding process can be 0.04 mm; or, when the third thickness is 0.05 mm, the thickness of the planetary disk in the first grinding process can be 0.05 mm. Alternatively, the thickness of the planetary disk in the first grinding process can be less than the third thickness. For example, when the third thickness is 0.04 mm, the thickness of the planetary disk in the first grinding process can be 0.35 mm; or, when the third thickness is 0.05 mm, the thickness of the planetary disk in the first grinding process can be 0.04 mm. This application does not specifically limit the abrasive material used in the first grinding process. For example, the abrasive material used in the first grinding process can be a diamond liquid with a mesh size of 3000 to 4000.

[0071] In this embodiment, the grinding equipment for grinding the ceramic etched plate includes a first grinding disc, a second grinding disc, and a first planetary disk. The first planetary disk is the planetary disk used in the first grinding process. During the first grinding process, the ceramic etched plate is supported on the first planetary disk. During the first grinding process, the first grinding disc performs a first grinding process on the first etched surface, and the second grinding disc performs a first grinding process on the second etched surface. The first grinding processes on the first and second etched surfaces are performed simultaneously, i.e., the first and second grinding discs rotate simultaneously. This application does not specifically limit the materials of the first grinding disc, the second grinding disc, and the first planetary disk; the materials of the first grinding disc, the second grinding disc, and the first planetary disk can be the same or different. For example, the materials of the first grinding disc, the second grinding disc, and the first planetary disk can be the same, such as double-sided resin copper disks. Double-sided resin copper disks can increase the adsorption of diamond liquid and improve the grinding effect.

[0072] In the first grinding process, the rotational speeds of the first grinding disc and the second grinding disc can be the same or different. In one possible embodiment, during the first grinding process, the first grinding disc is positioned above the first planetary disk, and the second grinding disc is positioned below the first planetary disk. In this case, the rotational speed of the first grinding disc can be less than that of the second grinding disc. Optionally, the rotational speed range of the first grinding disc can be 6 r / min to 8 r / min, and the rotational speed range of the second grinding disc can be 15 r / min to 20 r / min. During the first grinding process, the pressure exerted by the first grinding disc on the first planetary disk and the pressure exerted by the second grinding disc on the first planetary disk can be the same or different. Optionally, the pressure range of the first grinding disc on the first planetary disk is 2 kg / pcs to 4 kg / pcs, and the pressure range of the second grinding disc on the first planetary disk is also 2 kg / pcs to 4 kg / pcs. In one possible embodiment, during the first grinding process, the first grinding disc is positioned above the first planetary disk, and the second grinding disc is positioned below the first planetary disk. In this case, the pressure exerted by the first grinding disc on the first planetary disk can be greater than that exerted by the second grinding disc on the first planetary disk.

[0073] During the first grinding process, the first planetary disk revolves and rotates. The rotational speed of the first planetary disk can be less than the rotational speed of the second grinding disk and less than the rotational speed of the first grinding disk. In one possible embodiment, the rotational speed of the first planetary disk can be in the range of 2 r / min to 4 r / min. During the first grinding process, one or more ceramic etched plates can be supported on the first planetary disk. In one possible embodiment, the first planetary disk in the first grinding process can have multiple first mounting holes, and one or more ceramic etched plates are mounted in the first mounting holes. The rotation of the first planetary disk during the first grinding process can improve the uniformity of grinding the multiple ceramic etched plates.

[0074] This embodiment achieves a faster reduction in the thickness of the ceramic etched plate from the second thickness to the third thickness by performing a first grinding process on the first and second etched surfaces. Furthermore, the first and second etched surfaces are simultaneously and uniformly thinned during the first grinding process, resulting in stress balance and preventing warping of the ceramic etched plate. By ensuring that the thickness of the planetary disks in the first grinding process is less than or equal to the third thickness, it avoids a situation where the first and second grinding disks cannot contact the etched ceramic plate before the thickness has been reduced to the third thickness, thus preventing grinding from being impossible.

[0075] In another possible embodiment, step S310 includes, but is not limited to, step S3102.

[0076] S3102: Simultaneously perform a first polishing process on the first etched surface and the second etched surface to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness.

[0077] Wherein, the thickness of the planetary disk in the first polishing process is less than or equal to the third thickness.

[0078] Optionally, the third thickness can range from 0.04 mm to 0.06 mm. For example, the third thickness can be 0.04 mm, 0.044 mm, 0.047 mm, 0.049 mm, 0.05 mm, 0.052 mm, 0.055 mm, 0.058 mm, or 0.06 mm. The thickness of the planetary disk in the first polishing process can be equal to the third thickness. For example, when the third thickness is 0.04 mm, the thickness of the planetary disk in the first polishing process can be 0.04 mm; or, when the third thickness is 0.05 mm, the thickness of the planetary disk in the first polishing process can be 0.05 mm. Alternatively, the thickness of the planetary disk in the first polishing process can be less than the third thickness. For example, when the third thickness is 0.04 mm, the thickness of the planetary disk in the first polishing process can be 0.35 mm; or, when the third thickness is 0.05 mm, the thickness of the planetary disk in the first polishing process can be 0.04 mm. This application does not specifically limit the polishing material used in the first polishing process. For example, the polishing material used in the first polishing process can be a silicon oxide (e.g., SiO2) gel with a particle size of 80nm to 120nm.

[0079] In this embodiment, the polishing equipment for polishing the ceramic etched plate includes a first polishing disc, a second polishing disc, and a second planetary disc. The second planetary disc is the same as the planetary disc used in the first polishing process. During the first polishing process, the ceramic etched plate is supported on the second planetary disc. During the first polishing process, the first polishing disc performs a first polishing treatment on the first etched surface, and the second polishing disc performs a first polishing treatment on the second etched surface. The first polishing treatments on the first and second etched surfaces are performed simultaneously, i.e., the first and second polishing discs rotate simultaneously. This application does not specifically limit the materials of the first polishing disc, the second polishing disc, and the second planetary disc; the materials of the first polishing disc, the second polishing disc, and the second planetary disc can be the same or different. For example, the materials of the first polishing disc, the second polishing disc, and the second planetary disc can be the same, such as polyurethane stainless steel discs. Polyurethane stainless steel discs can increase the adsorption of silica gel, improving the polishing effect. The Shore hardness of the polyurethane in the polyurethane stainless steel disc can be in the range of 75 to 85 degrees.

[0080] During the first polishing process, the rotational speeds of the first polishing disc and the second polishing disc can be the same or different. In one possible embodiment, during the first polishing process, the first polishing disc is positioned above the second planetary disk, and the second polishing disc is positioned below the second planetary disk. In this case, the rotational speed of the first polishing disc can be less than that of the second polishing disc. Optionally, the rotational speed range of the first polishing disc can be 8 r / min to 10 r / min, and the rotational speed range of the second polishing disc can be 20 r / min to 25 r / min. During the first polishing process, the pressure of the first polishing disc on the second planetary disk and the pressure of the second polishing disc on the second planetary disk can be the same or different. Optionally, the pressure range of the first polishing disc on the second planetary disk is 3 kg / pcs to 5 kg / pcs, and the pressure range of the second polishing disc on the second planetary disk is 3 kg / pcs to 5 kg / pcs. In one possible embodiment, during the first polishing process, the first polishing disc is positioned above the second planetary disk, and the second polishing disc is positioned below the second planetary disk. In this case, the pressure of the first polishing disc on the second planetary disk can be greater than that of the second polishing disc on the second planetary disk.

[0081] During the first polishing process, the second planetary disk revolves and rotates. The rotational speed of the second planetary disk can be less than the rotational speed of the second polishing disk and less than the rotational speed of the first polishing disk. In one possible embodiment, the rotational speed of the second planetary disk can be in the range of 2 r / min to 4 r / min. During the first polishing process, one or more ceramic etched plates can be supported on the second planetary disk. In one possible embodiment, the second planetary disk in the first polishing process can have multiple second mounting holes, and one or more ceramic etched plates are mounted in the second mounting holes. The rotation of the second planetary disk during the first polishing process can improve the uniformity of polishing of the multiple ceramic etched plates.

[0082] This embodiment achieves a smoother surface on the ceramic etched plate by performing a first polishing process on the first and second etched surfaces, reducing the thickness from the second to the third thickness. Furthermore, the simultaneous and uniform thinning of both surfaces during the first polishing process ensures stress balance and prevents warping. By ensuring the thickness of the planetary disks in the first polishing process is less than or equal to the third thickness, it avoids situations where the first and second polishing disks cannot contact the etched ceramic plate before the thickness reaches the third thickness, thus preventing polishing failure.

[0083] In a third possible embodiment, step S310 includes, but is not limited to, steps S3103 and S3104.

[0084] S3103: Simultaneously perform a second grinding process on the first corrosion surface and the second corrosion surface to reduce the thickness of the ceramic corrosion plate from the second thickness to the fourth thickness.

[0085] S3104: Simultaneously perform a second polishing process on the first corrosion surface and the second corrosion surface to reduce the thickness of the ceramic corrosion plate from the fourth thickness to the third thickness.

[0086] Wherein, the thickness of the planetary disk in the second grinding process is less than or equal to the fourth thickness, the thickness of the planetary disk in the second polishing process is less than or equal to the third thickness, and the thickness of the planetary disk in the second polishing process is less than the thickness of the planetary disk in the second grinding process.

[0087] Understandably, in this embodiment, the fourth thickness is less than the second thickness, and the third thickness is less than the fourth thickness.

[0088] In one possible embodiment, the fourth thickness can range from 0.05 mm to 0.06 mm. For example, the fourth thickness can be 0.05 mm, or 0.051 mm, or 0.052 mm, or 0.053 mm, or 0.054 mm, or 0.055 mm, or 0.056 mm, or 0.057 mm, or 0.058 mm, or 0.059 mm, or 0.06 mm. In the second grinding process, the thickness of the planetary disk can be equal to the fourth thickness. For example, when the fourth thickness is 0.05 mm, the thickness of the planetary disk in the second grinding process can be 0.05 mm; or, when the fourth thickness is 0.06 mm, the thickness of the planetary disk in the second grinding process can be 0.06 mm. Alternatively, the thickness of the planetary disk in the second grinding process can be less than the fourth thickness. For example, when the fourth thickness is 0.05 mm, the thickness of the planetary disk in the second grinding process can be 0.045 mm; or, when the fourth thickness is 0.06 mm, the thickness of the planetary disk in the second grinding process can be 0.055 mm. The grinding material used in the second grinding process can be referred to the relevant description in the first grinding process above, and will not be repeated here.

[0089] In one possible embodiment, the third thickness can range from 0.04 mm to 0.05 mm. For example, the third thickness can be 0.04 mm, or 0.041 mm, or 0.042 mm, or 0.043 mm, or 0.044 mm, or 0.045 mm, or 0.046 mm, or 0.047 mm, or 0.048 mm, or 0.049 mm, or 0.05 mm. In the second polishing process, the thickness of the planetary disk can be equal to the third thickness. For example, when the third thickness is 0.04 mm, the thickness of the planetary disk in the second polishing process can be 0.04 mm; or, when the third thickness is 0.05 mm, the thickness of the planetary disk in the second polishing process can be 0.05 mm. Alternatively, the thickness of the planetary disk in the second polishing process can be less than the third thickness. For example, when the third thickness is 0.04 mm, the thickness of the planetary disk in the second polishing process can be 0.035 mm; or, when the third thickness is 0.05 mm, the thickness of the planetary disk in the second polishing process can be 0.04 mm. The polishing material used in the second polishing process can be referred to the relevant description in the first polishing process above, and will not be repeated here.

[0090] In this embodiment, the grinding equipment for grinding the ceramic etched plate in step S3103 includes a third grinding disc, a fourth grinding disc, and a third planetary disk. The third planetary disk is the same as the planetary disk used in the second grinding process. During the second grinding process, the ceramic etched plate is supported on the third planetary disk. During the second grinding process, the third grinding disc performs a second grinding process on the first etched surface, and the fourth grinding disc performs a second grinding process on the second etched surface. The second grinding processes on the first and second etched surfaces are performed simultaneously, meaning the third and fourth grinding discs rotate simultaneously. The materials of the third grinding disc, the fourth grinding disc, and the third planetary disk can be referred to the relevant descriptions in the first grinding process described above, and will not be repeated here.

[0091] During the second grinding process, the rotational speeds of the third and fourth grinding discs can be the same or different. In one possible embodiment, during the second grinding process, the third grinding disc is positioned above the third planetary disk, and the fourth grinding disc is positioned below the third planetary disk. In this case, the rotational speed of the third grinding disc can be less than that of the fourth grinding disc. Optionally, the rotational speed range of the third grinding disc can be 6 r / min to 8 r / min, and the rotational speed range of the fourth grinding disc can be 15 r / min to 20 r / min. During the second grinding process, the pressure of the third grinding disc on the third planetary disk and the pressure of the fourth grinding disc on the third planetary disk can be the same or different. Optionally, the pressure range of the third grinding disc on the third planetary disk is 2 kg / pcs to 4 kg / pcs, and the pressure range of the fourth grinding disc on the third planetary disk is 2 kg / pcs to 4 kg / pcs. In one possible embodiment, during the second grinding process, the third grinding disc is positioned above the third planetary disk, and the fourth grinding disc is positioned below the third planetary disk. In this case, the pressure of the third grinding disc on the third planetary disk can be greater than that of the fourth grinding disc on the third planetary disk.

[0092] During the second grinding process, the third planetary disk revolves and rotates. The rotational speed of the third planetary disk can be less than that of the fourth grinding disk, and also less than that of the third grinding disk itself. In one possible embodiment, the rotational speed of the third planetary disk can be in the range of 2 r / min to 4 r / min. During the second grinding process, one or more ceramic etched plates can be supported on the third planetary disk. In one possible embodiment, the third planetary disk in the second grinding process can have multiple third mounting holes, and one or more ceramic etched plates are mounted in the third mounting holes. The rotation of the third planetary disk during the second grinding process can improve the uniformity of grinding the multiple ceramic etched plates.

[0093] In step S3104 of this embodiment, the polishing equipment for polishing the ceramic etched plate includes a third polishing disc, a fourth polishing disc, and a fourth planetary disk. The fourth planetary disk is the same as the planetary disk used in the second polishing process. During the second polishing process, the ceramic etched plate is supported on the fourth planetary disk. During the second polishing process, the third polishing disc performs a second polishing process on the first etched surface, and the fourth polishing disc performs a second polishing process on the second etched surface. The second polishing processes on the first and second etched surfaces are performed simultaneously, that is, the third and fourth polishing discs rotate simultaneously. The materials of the third polishing disc, the fourth polishing disc, and the fourth planetary disk can be referred to the relevant descriptions in the first polishing process described above, and will not be repeated here.

[0094] During the second polishing process, the rotational speeds of the third and fourth polishing disks can be the same or different. In one possible embodiment, during the second polishing process, the third polishing disk is positioned above the fourth planetary disk, and the fourth polishing disk is positioned below the fourth planetary disk. In this case, the rotational speed of the third polishing disk can be less than that of the fourth polishing disk. Optionally, the rotational speed range of the third polishing disk can be 8 r / min to 10 r / min, and the rotational speed range of the fourth polishing disk can be 20 r / min to 25 r / min. During the second polishing process, the pressure exerted by the third polishing disk on the fourth planetary disk and the pressure exerted by the fourth polishing disk on the fourth planetary disk can be the same or different. Optionally, the pressure range of the third polishing disk on the fourth planetary disk is 3 kg / pcs to 5 kg / pcs, and the pressure range of the fourth polishing disk on the fourth planetary disk is 3 kg / pcs to 5 kg / pcs. In one possible embodiment, during the second polishing process, the third polishing disk is positioned above the fourth planetary disk, and the fourth polishing disk is positioned below the fourth planetary disk. In this case, the pressure exerted by the third polishing disk on the fourth planetary disk can be greater than that exerted by the fourth polishing disk on the fourth planetary disk.

[0095] During the second polishing process, the fourth planetary disk revolves and rotates. The rotational speed of the fourth planetary disk can be less than the rotational speed of the fourth polishing disk and less than the rotational speed of the third polishing disk. In one possible embodiment, the rotational speed of the fourth planetary disk can be in the range of 2 r / min to 4 r / min. During the second polishing process, one or more ceramic etched plates can be supported on the fourth planetary disk. In one possible embodiment, the fourth planetary disk in the second polishing process can have multiple fourth mounting holes, and one or more ceramic etched plates are mounted in the fourth mounting holes. The rotation of the fourth planetary disk during the second polishing process can improve the uniformity of polishing of the multiple ceramic etched plates.

[0096] This embodiment achieves rapid reduction of the ceramic etched plate thickness from the second to the third thickness through simultaneous second grinding and polishing. The uniform thinning of both surfaces during the second grinding and polishing processes ensures stress balance and prevents warping. By ensuring the planetary disk thickness in the second grinding process is less than or equal to the fourth thickness, the inability of the third and fourth grinding disks to contact the etched ceramic plate before the thickness reaches the fourth thickness prevents grinding failure. Similarly, by ensuring the planetary disk thickness in the second polishing process is less than or equal to the third thickness, the inability of the third and fourth polishing disks to contact the etched ceramic plate before the thickness reaches the third thickness prevents polishing failure.

[0097] In one possible embodiment, such as Figure 3 As shown, step S10 includes, but is not limited to, steps S101 and S102.

[0098] S101: Prepare the ceramic body to be processed with the fifth thickness.

[0099] S102: Perform a second processing on the surface of the ceramic body to be processed, so that the thickness of the ceramic body to be processed is reduced from the fifth thickness to the first thickness, so as to form a ceramic substrate.

[0100] It is understood that the thickness of the ceramic body to be processed is the fifth thickness. This application does not specifically limit the fifth thickness. In one possible embodiment, the fifth thickness may be greater than or equal to 0.15 mm. Since the thickness of the ceramic body to be processed is reduced from the fifth thickness to the first thickness during the process of forming the ceramic substrate from the ceramic body to be processed, the first thickness is less than the fifth thickness.

[0101] This application does not specifically limit the shape of the ceramic body to be processed. For example, the shape of the ceramic body to be processed can be approximately circular, elliptical, square, rectangular, other polygonal, or irregular. The specific methods for preparing the fifth thickness of the ceramic body in step S101 include, but are not limited to, preparing the fifth thickness of the ceramic body by means of blanking and sintering; or, preparing the fifth thickness of the ceramic body by means of blanking, sintering, and modification.

[0102] The second processing of the surface of the ceramic body to be processed in step S102 includes, but is not limited to, grinding and / or polishing the surface of the ceramic body to be processed. The purpose of the second processing of the surface of the ceramic body to be processed is to reduce the thickness of the ceramic body to be processed in order to form a ceramic substrate.

[0103] This embodiment forms a ceramic substrate by directly thinning the ceramic body to be processed, forms a ceramic etching plate by etching the ceramic substrate, and forms a ceramic plate by thinning the ceramic etching plate. Only one etching process is required when preparing an ultra-thin ceramic plate, which can improve the preparation efficiency of the ceramic plate and avoid the situation where the corrosion leads to increased porosity, decreased density, and insufficient compressive strength of the ceramic plate.

[0104] Of course, in other possible embodiments, the ceramic substrate can be a ceramic substrate for which surface scratches need to be repaired. The method for preparing the ceramic plate in this embodiment can achieve the repair of scratches on the ceramic substrate. In this case, step S10 may include directly providing a ceramic substrate of a first thickness.

[0105] In one possible embodiment, the first thickness is less than or equal to 0.11 mm. Optionally, the first thickness is greater than or equal to 0.07 mm and less than or equal to 0.11 mm. For example, the range of the first thickness can be 0.07 mm to 0.09 mm. Exemplarily, the first thickness is 0.07 mm, or 0.075 mm, or 0.08 mm, or 0.085 mm, or 0.09 mm; or, the first thickness is greater than or equal to 0.08 mm and less than or equal to 0.11 mm. For example, the range of the first thickness can be 0.08 mm to 0.10 mm. Exemplarily, the first thickness is 0.08 mm, or 0.85 mm, or 0.09 mm, or 0.095 mm, or 0.10 mm.

[0106] By making the first thickness less than or equal to 0.11 mm, it is advantageous to prepare a ceramic plate with a thickness of less than or equal to 0.08 mm after corrosion treatment and the first processing.

[0107] The surface of the ceramic body to be processed has a first surface and a second surface disposed opposite to each other along the thickness direction. Step S102 includes, but is not limited to, step S120.

[0108] S120: Perform a second processing on the first surface and / or the second surface to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness.

[0109] Optionally, the first surface is subjected to a second processing treatment to reduce the thickness of the ceramic body to be processed from the second thickness to the third thickness; or, the second surface is subjected to a second processing treatment to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness; or, the first surface and the second surface are subjected to a second processing treatment to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness.

[0110] In this process, a second processing treatment is applied to either the first or second surface, i.e., the thickness of the ceramic body to be processed is reduced through a single-sided processing technique. Alternatively, a second processing treatment is applied to both the first and second surfaces, i.e., the thickness of the ceramic body to be processed is reduced through a double-sided processing technique.

[0111] The second processing of the first surface and the second surface may include performing the first processing on the first surface and the second surface separately, or it may include performing the second processing on the first surface and the second surface simultaneously.

[0112] In the embodiment where the first and second surfaces are subjected to a second processing treatment, the thickness of the ceramic body to be processed can be reduced more efficiently and quickly, and the situation of stress concentration on one side can be avoided.

[0113] In one possible embodiment, step S120 may include, but is not limited to, step S121.

[0114] S121: Simultaneously perform a second processing on the first surface and the second surface to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness.

[0115] This embodiment requires a second processing step on the ceramic body to be processed using two grinding discs and / or two polishing discs. Specifically, in embodiments where the second processing step includes grinding, one of the two grinding discs grinds the first surface, and the other grinding disc grinds the second surface; the grinding of the first and second surfaces is performed simultaneously. In embodiments where the second processing step includes polishing, one of the two polishing discs polishes the first surface, and the other polishing disc polishes the second surface; the polishing of the first and second surfaces is performed simultaneously.

[0116] When processing both sides separately, the ceramic body is easily subjected to stress on only one side during each processing step, leading to an imbalance of stress on both sides and causing warping. Furthermore, the thickness reduction on each side is difficult to control, resulting in uneven thickness reduction on both sides. Therefore, this embodiment, by simultaneously performing a second processing on both the first and second surfaces, can ensure uniform thinning of both sides of the ceramic body, balance stress, and prevent warping of the prepared ceramic substrate.

[0117] In one possible embodiment, step S121 includes, but is not limited to, the following step S1211.

[0118] S1211: Simultaneously perform a third grinding process on the first surface and the second surface to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness.

[0119] In the third grinding process, the thickness of the planetary disk is less than or equal to the thickness of the first disk.

[0120] Optionally, the first thickness can range from 0.07mm to 0.11mm. For example, the first thickness can be 0.07mm, 0.075mm, 0.08mm, 0.085mm, 0.09mm, 0.095mm, 0.10mm, 0.105mm, or 0.11mm. In this case, the thickness of the planetary disk in the third grinding process can be equal to the first thickness. For example, when the first thickness is 0.10mm, the thickness of the planetary disk in the third grinding process can be 0.10mm, or when the first thickness is 0.07mm, the thickness of the planetary disk in the third grinding process can be 0.07mm. Alternatively, the thickness of the planetary disk in the third grinding process can be less than the first thickness. For example, when the first thickness is 0.10mm, the thickness of the planetary disk in the third grinding process can be 0.09mm, or when the first thickness is 0.07mm, the thickness of the planetary disk in the third grinding process can be 0.065mm. This application does not specifically limit the abrasive material used in the third grinding process. For example, the abrasive material used in the third grinding process can be a mixture of silicon carbide (SiC) sand with a mesh size of 1000 to 1500 mesh and water, or diamond liquid with a mesh size of 3000 to 4000 mesh.

[0121] In this embodiment, the grinding equipment for grinding the ceramic body to be processed includes a fifth grinding disc, a sixth grinding disc, and a fifth planetary disk. The fifth planetary disk is the same as the planetary disk used in the third grinding process. During the third grinding process, the ceramic body to be processed is supported on the fifth planetary disk. During the third grinding process, the fifth grinding disc performs the third grinding process on the first surface, and the sixth grinding disc performs the third grinding process on the second surface. The third grinding processes on the first and second surfaces are performed simultaneously, that is, the fifth and sixth grinding discs rotate simultaneously. This application does not specifically limit the materials of the fifth grinding disc, the sixth grinding disc, and the fifth planetary disk; the materials of the fifth grinding disc, the sixth grinding disc, and the fifth planetary disk can be the same or different. For example, when the abrasive material used in the third grinding process is a mixture of silicon carbide (SiC) sand and water, the materials of the fifth grinding disc, the sixth grinding disc, and the fifth planetary disk can all be double-sided cast iron discs. The double-sided cast iron discs can increase the adsorption of silicon carbide and improve the grinding effect. When the abrasive material used in the third grinding process is diamond liquid, the materials of the fifth grinding disc, the sixth grinding disc, and the fifth planetary disk can all be double-sided resin copper discs. The double-sided cast iron discs can increase the adsorption of diamond liquid and improve the grinding effect.

[0122] During the third grinding process, the rotational speeds of the fifth and sixth grinding discs can be the same or different. In one possible embodiment, during the third grinding process, the fifth grinding disc is positioned above the fifth planetary disk, and the sixth grinding disc is positioned below the fifth planetary disk. In this case, the rotational speed of the fifth grinding disc can be less than that of the sixth grinding disc. Optionally, the rotational speed range of the fifth grinding disc can be 10 r / min to 25 r / min, and the rotational speed range of the sixth grinding disc can be 20 r / min to 40 r / min. During the third grinding process, the pressure of the fifth grinding disc on the fifth planetary disk and the pressure of the sixth grinding disc on the fifth planetary disk can be the same or different. Optionally, the pressure range of the fifth grinding disc on the fifth planetary disk is 3 kg / pcs to 10 kg / pcs, and the pressure range of the sixth grinding disc on the fifth planetary disk is 3 kg / pcs to 10 kg / pcs. In one possible embodiment, during the third grinding process, the fifth grinding disc is positioned above the fifth planetary disk, and the sixth grinding disc is positioned below the fifth planetary disk. In this case, the pressure of the fifth grinding disc on the fifth planetary disk can be greater than that of the sixth grinding disc on the fifth planetary disk.

[0123] During the third grinding process, the fifth planetary disk revolves and rotates. The rotational speed of the fifth planetary disk can be less than that of the sixth grinding disk, and also less than that of the fifth grinding disk. In one possible embodiment, the rotational speed of the fifth planetary disk can be in the range of 2 r / min to 5 r / min. The rotation of the fifth planetary disk during the third grinding process can improve the uniformity of grinding multiple ceramic bodies.

[0124] During the third grinding process, one or more ceramic bodies to be processed may be supported on the fifth planetary disk. In one possible embodiment, the fifth planetary disk in the third grinding process may have multiple fifth mounting holes, and one or more ceramic bodies to be processed may be mounted in the fifth mounting holes.

[0125] This embodiment achieves a faster reduction in the thickness of the ceramic body from the fifth thickness to the first thickness by performing a third grinding process on the first and second surfaces. Furthermore, the first and second surfaces are simultaneously and uniformly thinned during the third grinding process, resulting in stress balance and preventing warping of the ceramic body. By ensuring that the thickness of the planetary disks in the third grinding process is less than or equal to the first thickness, it avoids the situation where the fifth and sixth grinding disks cannot contact the ceramic body before its thickness reaches the first thickness, thus preventing grinding failure.

[0126] In another possible embodiment, step S121 includes, but is not limited to, steps S1212 and S1213.

[0127] S1212: Simultaneously perform a fourth grinding process on the first surface and the second surface to reduce the thickness of the ceramic body to be processed from the fifth thickness to the sixth thickness.

[0128] S1213: Simultaneously perform a fifth grinding process on the first surface and the second surface to reduce the thickness of the ceramic body to be processed from the sixth thickness to the first thickness.

[0129] Wherein, the thickness of the planetary disk in the fourth grinding process is less than or equal to the sixth thickness, the thickness of the planetary disk in the fifth grinding process is less than or equal to the first thickness, and the thickness of the planetary disk in the fifth grinding process is less than the thickness of the planetary disk in the fourth grinding process.

[0130] Understandably, in this embodiment, the sixth thickness is less than the fifth thickness, and the first thickness is less than the sixth thickness.

[0131] In one possible embodiment, the first thickness can range from 0.07 mm to 0.8 mm, and the sixth thickness can range from 0.10 mm to 0.11 mm. For example, the sixth thickness can be 0.10 mm, or 0.101 mm, or 0.102 mm, or 0.103 mm, or 0.104 mm, or 0.105 mm, or 0.106 mm, or 0.107 mm, or 0.108 mm, or 0.109 mm, or 0.11 mm. The first thickness can be 0.07 mm, or 0.071 mm, or 0.072 mm, or 0.073 mm, or 0.074 mm, or 0.075 mm, or 0.076 mm, or 0.077 mm, or 0.078 mm, or 0.079 mm, or 0.08 mm.

[0132] In this embodiment, the thickness of the planetary disk in the fourth grinding process can be equal to the sixth thickness. For example, when the sixth thickness is 0.10 mm, the thickness of the planetary disk in the fourth grinding process can be 0.10 mm, or when the sixth thickness is 0.11 mm, the thickness of the planetary disk in the fourth grinding process can be 0.11 mm. Alternatively, the thickness of the planetary disk in the fourth grinding process can be less than the sixth thickness. For example, when the sixth thickness is 0.10 mm, the thickness of the planetary disk in the fourth grinding process can be 0.95 mm, or when the sixth thickness is 0.11 mm, the thickness of the planetary disk in the fourth grinding process can be 0.105 mm.

[0133] The thickness of the planetary disk in the fifth grinding process can be equal to the first thickness. For example, when the first thickness is 0.07 mm, the thickness of the planetary disk in the fifth grinding process can be 0.07 mm, or when the first thickness is 0.08 mm, the thickness of the planetary disk in the fifth grinding process can be 0.08 mm. Alternatively, the thickness of the planetary disk in the fifth grinding process can be less than the first thickness. For example, when the first thickness is 0.07 mm, the thickness of the planetary disk in the fifth grinding process can be 0.65 mm, or when the first thickness is 0.08 mm, the thickness of the planetary disk in the fifth grinding process can be 0.075 mm.

[0134] This application does not specifically limit the abrasive materials used in the fourth and fifth grinding processes. For example, the abrasive material used in the fourth grinding process can be a mixture of silicon carbide sand and water, wherein the mesh size of the silicon carbide can range from 1000 to 1500 mesh. The abrasive material used in the fifth grinding process can be molten diamond with a mesh size of 3000 to 4000 mesh. In this embodiment, step S1212 can be understood as coarse grinding, and step S1213 can be understood as fine grinding. Optionally, the difference between the fifth and sixth thicknesses is greater than the difference between the sixth and first thicknesses.

[0135] In this embodiment, the grinding equipment for grinding the ceramic body to be processed in step S1212 includes a seventh grinding disc, an eighth grinding disc, and a sixth planetary disc. The sixth planetary disc is the same as the planetary disc used in the fourth grinding process. During the fourth grinding process, the ceramic body to be processed is supported on the sixth planetary disc. During the fourth grinding process, the seventh grinding disc performs the fourth grinding process on the first surface, and the eighth grinding disc performs the fourth grinding process on the second surface. The fourth grinding processes on the first and second surfaces are performed simultaneously, that is, the seventh and eighth grinding discs rotate simultaneously. The materials of the seventh grinding disc, the eighth grinding disc, and the sixth planetary disc can all be double-sided cast iron discs. Double-sided cast iron discs can increase the adsorption of silicon carbide (SiC) and improve the grinding effect.

[0136] During the fourth grinding process, the rotational speeds of the seventh and eighth grinding discs can be the same or different. In one possible embodiment, during the fourth grinding process, the seventh grinding disc is positioned above the sixth planetary disk, and the eighth grinding disc is positioned below the sixth planetary disk. In this case, the rotational speed of the seventh grinding disc can be less than that of the eighth grinding disc. Optionally, the rotational speed range of the seventh grinding disc can be 10 r / min to 15 r / min, and the rotational speed range of the eighth grinding disc can be 30 r / min to 40 r / min. During the fourth grinding process, the pressure exerted by the seventh and eighth grinding discs on the sixth planetary disk can be the same or different. Optionally, the pressure range of the seventh grinding disc on the sixth planetary disk is 5 kg / pcs to 10 kg / pcs, and the pressure range of the eighth grinding disc on the sixth planetary disk is 5 kg / pcs to 10 kg / pcs. In one possible embodiment, during the fourth grinding process, the seventh grinding disc is positioned above the sixth planetary disk, and the eighth grinding disc is positioned below the sixth planetary disk. In this case, the pressure exerted by the seventh grinding disc on the sixth planetary disk can be greater than that exerted by the eighth grinding disc on the sixth planetary disk.

[0137] During the fourth grinding process, the sixth planetary disk revolves and rotates. The rotational speed of the sixth planetary disk can be less than that of the eighth grinding disk and less than that of the seventh grinding disk. In one possible embodiment, the rotational speed of the sixth planetary disk can be in the range of 3 r / min to 5 r / min. During the fourth grinding process, one or more ceramic bodies to be processed can be supported on the sixth planetary disk. In one possible embodiment, the sixth planetary disk in the fourth grinding process can have multiple sixth mounting holes, and one or more ceramic bodies to be processed can be mounted in the sixth mounting holes. The rotation of the sixth planetary disk during the fourth grinding process can improve the uniformity of grinding multiple ceramic bodies to be processed.

[0138] In this embodiment, the grinding equipment for grinding the ceramic body to be processed in step S1213 includes a ninth grinding disc, a tenth grinding disc, and a seventh planetary disc. The seventh planetary disc is the same as the planetary disc used in the fifth grinding process. During the fifth grinding process, the ceramic body to be processed is supported on the seventh planetary disc. During the fifth grinding process, the ninth grinding disc performs the fifth grinding process on the first surface, and the tenth grinding disc performs the fifth grinding process on the second surface. The fifth grinding processes on the first and second surfaces are performed simultaneously, that is, the ninth and tenth grinding discs rotate simultaneously. The materials of the ninth grinding disc, the tenth grinding disc, and the seventh planetary disc can all be double-sided resin copper discs. Double-sided resin copper discs can increase the adsorption of diamond liquid and improve the grinding effect.

[0139] In the fifth grinding process, the rotational speeds of the ninth and tenth grinding discs can be the same or different. In one possible embodiment, during the fifth grinding process, the ninth grinding disc is positioned above the seventh planetary disk, and the tenth grinding disc is positioned below the seventh planetary disk. In this case, the rotational speed of the ninth grinding disc can be less than that of the tenth grinding disc. Optionally, the rotational speed range of the ninth grinding disc can be 8 r / min to 12 r / min, and the rotational speed range of the tenth grinding disc can be 20 r / min to 25 r / min. During the fifth grinding process, the pressure exerted by the ninth and tenth grinding discs on the seventh planetary disk can be the same or different. Optionally, the pressure range of the ninth grinding disc on the seventh planetary disk is 3 kg / pcs to 6 kg / pcs, and the pressure range of the tenth grinding disc on the seventh planetary disk is 3 kg / pcs to 6 kg / pcs. In one possible embodiment, during the fifth grinding process, the ninth grinding disc is positioned above the seventh planetary disk, and the tenth grinding disc is positioned below the seventh planetary disk. In this case, the pressure exerted by the ninth grinding disc on the seventh planetary disk can be greater than that exerted by the tenth grinding disc on the seventh planetary disk.

[0140] During the fifth grinding process, the seventh planetary disk revolves and rotates. The rotational speed of the seventh planetary disk can be less than that of the tenth grinding disk and less than that of the ninth grinding disk. In one possible embodiment, the rotational speed of the seventh planetary disk can be in the range of 2 r / min to 4 r / min. During the fifth grinding process, one or more ceramic bodies to be processed can be supported on the seventh planetary disk. In one possible embodiment, the seventh planetary disk in the fifth grinding process can have multiple seventh mounting holes, and one or more ceramic bodies to be processed can be mounted in the seventh mounting holes. The rotation of the seventh planetary disk during the fifth grinding process can improve the uniformity of grinding multiple ceramic bodies to be processed.

[0141] This embodiment, by simultaneously performing the fourth and fifth grinding processes on the first and second surfaces, achieves a reduction in the thickness of the ceramic body from the fifth thickness to the first thickness. This ensures that both surfaces are uniformly thinned during the fourth and fifth grinding processes, maintaining stress balance and preventing warping of the ceramic body. By ensuring the thickness of the planetary disks in the fourth grinding process is less than or equal to the sixth thickness, it prevents the ninth and tenth grinding disks from failing to contact the ceramic body before the thickness reaches the sixth thickness, thus avoiding a situation where grinding is impossible. Similarly, by ensuring the thickness of the planetary disks in the fifth grinding process is less than or equal to the first thickness, it prevents the ninth and tenth grinding disks from failing to contact the ceramic body before the thickness reaches the first thickness, thus avoiding a situation where grinding is impossible.

[0142] In one possible embodiment, such as Figure 4As shown, step S101 includes, but is not limited to, steps S110 and S112.

[0143] S110: Prepare a ceramic blank with a seventh thickness.

[0144] S112: Sinter the ceramic blank to form a ceramic body of a fifth thickness.

[0145] The seventh thickness is greater than the fifth thickness. During the sintering of the ceramic green body, the porosity of the ceramic green body decreases and the bonding force between particles increases. Therefore, when the ceramic body to be processed is formed from the ceramic green body, the thickness decreases, that is, the seventh thickness is greater than the fifth thickness.

[0146] The preparation of the ceramic green body with the seventh thickness in step S110 includes, but is not limited to, preparing the ceramic green body with the seventh thickness using a tape casting process.

[0147] In step S112, during the sintering of the ceramic blank, the sintering temperature can be in the range of 1300℃~1400℃.

[0148] In one possible embodiment, the seventh thickness is less than or equal to 0.3 mm, and the fifth thickness is less than or equal to 0.2 mm.

[0149] Optionally, the seventh thickness can range from 0.2mm to 0.3mm. For example, the seventh thickness is 0.2mm, or 0.21mm, or 0.22mm, or 0.23mm, or 0.24mm, or 0.25mm, or 0.26mm, or 0.27mm, or 0.28mm, or 0.30mm. The fifth thickness can range from 0.15mm to 0.2mm. For example, the fifth thickness is 0.15mm, or 0.16mm, or 0.17mm, or 0.18mm, or 0.19mm, or 0.2mm.

[0150] By making the seventh thickness less than or equal to 0.3 mm, it is advantageous to pass through the ceramic preform to form a ceramic body of the fifth thickness. By making the fifth thickness less than or equal to 0.2 mm, it is advantageous to pass through the second processing to form a ceramic substrate of the first thickness.

[0151] In one possible embodiment, such as Figure 5 As shown, step S101 further includes step S111, which is located before step S112.

[0152] S111: Perform glue removal treatment on the ceramic body.

[0153] The temperature at which the binder is removed from the ceramic blank is lower than the temperature at which the ceramic blank is sintered.

[0154] Optionally, the temperature range for debinding the ceramic body in step S111 can be 800℃~1000℃.

[0155] Debinding the ceramic body before sintering can remove organic matter from the ceramic body, thereby reducing the gas generated during sintering and improving the density of the resulting ceramic body.

[0156] In one possible embodiment, such as Figure 6 As shown, step S10 also includes, but is not limited to, the following step S103. Step S103 is located before step S102.

[0157] S103: Correct the edge of the ceramic body to be processed.

[0158] The modification of the edge of the ceramic body to be processed includes, but is not limited to, modifying the edge of the ceramic body to be processed so that the edge of the ceramic body to be processed is rounded; and / or, modifying the edge of the ceramic body to be processed so that the roughness of the edge of the ceramic body to be processed is less than or equal to a preset roughness. The preset roughness can be determined according to specific processing requirements, and this application does not impose a specific limitation. For example, the range of the preset roughness can be 1µm to 50µm. Optionally, the edge of the ceramic body to be processed can be modified using a silicon carbide grinding wheel with a mesh size of 80 to 200 mesh.

[0159] By correcting the edges of the ceramic body to be processed, the uniformity and smoothness of the edges can be improved.

[0160] In addition, such as Figure 7 As shown, this application also provides a ceramic plate 100. The ceramic plate 100 is prepared using the ceramic plate preparation method described in any of the above embodiments.

[0161] Optionally, the thickness of the ceramic plate 100 is less than or equal to 0.08 mm. In one possible embodiment, the thickness of the ceramic plate 100 can range from 0.04 mm to 0.05 mm. Optionally, the material of the ceramic plate 100 is zirconium oxide.

[0162] Further, please refer to Figure 7 and Figure 8This application also provides an electronic device 1000. The electronic device 1000 includes, but is not limited to, mobile phones, tablets, laptops, watches, drones, robots, etc. In this embodiment, the electronic device 1000 is exemplified by a mobile phone. The electronic device 1000 includes a device body and a ceramic plate 100 as described in any of the above embodiments. Specifically, the device body includes a housing 200 and an electronic component 300 disposed within the housing 200. In one possible embodiment, the housing 200 includes a middle frame 201 and the ceramic plate 100 as described in any of the above embodiments. It is understood that in this embodiment, the ceramic plate 100 can serve as the back cover of the electronic device 1000. The middle frame 201 is connected to the ceramic plate 100. The connection methods between the middle frame 201 and the ceramic plate 100 include, but are not limited to, bonding, welding, threaded connection, magnetic connection, and snap-fit ​​connection. In another possible embodiment, the electronic component 300 includes an electronic module 301 and the ceramic plate 100 as described in any of the above embodiments. The ceramic plate 100 is used to support or protect the electronic module 301. The electronic module 301 includes, but is not limited to, a fingerprint recognition module, a camera module, a battery module, and a circuit board. It is understood that in this embodiment, the ceramic plate 100 can serve as a cover plate for the electronic module 301 of the electronic device 1000, or as a heat dissipation or support substrate for the electronic module 301. In this embodiment, the ceramic plate 100 is disposed within the outer casing 200.

[0163] The features mentioned above in the specification, claims, and drawings can be combined in any way as long as they are meaningful within the scope of this application. The advantages and features described with respect to the method of preparing the ceramic plate are applied accordingly to the ceramic plate 100 and the electronic device 1000.

[0164] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application, and such improvements and refinements are also considered to be within the protection scope of this application.

Claims

1. A method for preparing a ceramic plate, characterized in that, include: Prepare a ceramic substrate of the first thickness; The surface of the ceramic substrate is etched to form a ceramic etched plate of a second thickness; wherein the second thickness is less than or equal to the first thickness; The surface of the ceramic etched plate is subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness, so as to form a ceramic plate.

2. The method according to claim 1, characterized in that, The third thickness is less than or equal to 0.08 mm.

3. The method according to claim 1, characterized in that, The etching treatment of the surface of the ceramic substrate includes: The ceramic substrate is placed in an etching solution and kept there for a preset time; The corrosive solution includes one or more of the following: hydrofluoric acid, nitric acid, oxalic acid, acetic acid, hydrochloric acid, sulfuric acid, and carbonic acid.

4. The method according to claim 3, characterized in that, The step of placing the ceramic substrate in the etching solution and maintaining it for a preset time includes: The etching solution is heated to a preset temperature, the ceramic substrate is placed in the etching solution, and held for a preset time. The corrosion solution comprises ammonium fluoride powder, nitric acid solution, at least one surfactant, and water.

5. The method according to claim 1, characterized in that, The etching treatment of the surface of the ceramic substrate includes: The surface of the ceramic substrate is etched to make the surface hardness of the ceramic substrate less than or equal to 1200 HV.

6. The method according to any one of claims 1 to 5, characterized in that, The surface of the ceramic etching plate has a first etching surface and a second etching surface that are arranged opposite to each other along the thickness direction. Before performing the first processing on the surface of the ceramic etched plate, the method further includes: Clean the ceramic etched plate; The first processing of the surface of the ceramic etched plate, reducing the thickness of the ceramic etched plate from the second thickness to the third thickness, includes: The first etched surface and / or the second etched surface are subjected to a first processing treatment to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness.

7. The method according to claim 6, characterized in that, The first processing of the first etched surface and / or the second etched surface to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness includes: Simultaneously, the first corrosion surface and the second corrosion surface are subjected to a first processing treatment, so that the thickness of the ceramic corrosion plate is reduced from the second thickness to the third thickness.

8. The method according to claim 7, characterized in that, The simultaneous processing of the first etched surface and the second etched surface to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness includes: Simultaneously, the first and second etched surfaces are subjected to a first grinding process, reducing the thickness of the ceramic etched plate from the second thickness to a third thickness; wherein the thickness of the planetary disk in the first grinding process is less than or equal to the third thickness; or, Simultaneously, the first etched surface and the second etched surface are subjected to a first polishing process, reducing the thickness of the ceramic etched plate from the second thickness to the third thickness; wherein, the thickness of the planetary disk in the first polishing process is less than or equal to the third thickness.

9. The method according to claim 7, characterized in that, The simultaneous processing of the first etched surface and the second etched surface to reduce the thickness of the ceramic etched plate from the second thickness to the third thickness includes: Simultaneously, the first and second etched surfaces are subjected to a second grinding process, reducing the thickness of the ceramic etched plate from the second thickness to the fourth thickness. Simultaneously, the first and second etched surfaces are subjected to a second polishing process, reducing the thickness of the ceramic etched plate from the fourth thickness to the third thickness. Wherein, the thickness of the planetary disk in the second grinding process is less than or equal to the fourth thickness, the thickness of the planetary disk in the second polishing process is less than or equal to the third thickness, and the thickness of the planetary disk in the second polishing process is less than the thickness of the planetary disk in the second grinding process.

10. The method according to any one of claims 1 to 5, characterized in that, The preparation of the ceramic substrate of the first thickness includes: Prepare a ceramic body of the fifth thickness to be processed; The surface of the ceramic body to be processed is subjected to a second processing treatment to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness, so as to form a ceramic substrate.

11. The method according to claim 10, characterized in that, The first thickness is less than or equal to 0.11 mm.

12. The method according to claim 10, characterized in that, The surface of the ceramic body to be processed has a first surface and a second surface that are arranged opposite to each other along the thickness direction; The second processing of the surface of the ceramic body to be processed, reducing the thickness of the ceramic body from the fifth thickness to the first thickness, includes: A second processing treatment is performed on the first surface and / or the second surface to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness.

13. The method according to claim 12, characterized in that, The second processing of the first surface and / or the second surface to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness includes: Simultaneously, a second processing treatment is performed on the first and second surfaces to reduce the thickness of the ceramic body to be processed from the fifth thickness to the first thickness.

14. The method according to claim 13, characterized in that, The simultaneous second processing of the first and second surfaces to reduce the thickness of the ceramic body to be processed from a fifth thickness to a first thickness includes: Simultaneously, a third grinding process is performed on the first and second surfaces to reduce the thickness of the ceramic body to be processed from a fifth thickness to a first thickness; wherein, the thickness of the planetary disk in the third grinding process is less than or equal to the first thickness.

15. The method according to claim 13, characterized in that, The simultaneous second processing of the first and second surfaces to reduce the thickness of the ceramic body to be processed from a fifth thickness to a first thickness includes: Simultaneously, the first and second surfaces are subjected to a fourth grinding process, reducing the thickness of the ceramic body to be processed from a fifth thickness to a sixth thickness. Simultaneously, the first and second surfaces are subjected to a fifth grinding process, reducing the thickness of the ceramic body to be processed from the sixth thickness to the first thickness; Wherein, the thickness of the planetary disk in the fourth grinding process is less than or equal to the sixth thickness, the thickness of the planetary disk in the fifth grinding process is less than or equal to the first thickness, and the thickness of the planetary disk in the fifth grinding process is less than the thickness of the planetary disk in the fourth grinding process.

16. The method according to claim 10, characterized in that, The preparation of the fifth thickness of the ceramic body to be processed includes: Prepare a ceramic blank with a seventh thickness; The ceramic preform is sintered to form a ceramic body of a fifth thickness to be processed; The seventh thickness is greater than the fifth thickness.

17. The method according to claim 16, characterized in that, The seventh thickness is less than or equal to 0.3 mm, and the fifth thickness is less than or equal to 0.2 mm.

18. The method according to claim 16 or 17, characterized in that, Before sintering the ceramic preform, the process further includes: The ceramic blank is subjected to a debinding process; The temperature at which the binder is removed from the ceramic blank is lower than the temperature at which the ceramic blank is sintered.

19. The method according to claim 10, characterized in that, Before performing the second processing on the surface of the ceramic body to be processed, the method further includes: Correct the edges of the ceramic body to be processed.

20. A ceramic plate, characterized in that, It is prepared by the method according to any one of claims 1 to 19.

21. The ceramic plate according to claim 20, characterized in that, The thickness of the ceramic plate is less than or equal to 0.08 mm, and the material of the ceramic plate is zirconium oxide.

22. An electronic device, characterized in that, The device includes a device body and a ceramic plate according to claim 20 or 21. The device body includes a housing and an electronic component disposed within the housing. The housing includes a middle frame and the ceramic plate. The ceramic plate is connected to the middle frame. And / or, the electronic component includes an electronic module and the ceramic plate. The ceramic plate is used to support or protect the electronic module.

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