Semiconductor epitaxial structure and light emitting diode

Abstract

The invention provides a semiconductor epitaxial structure and a light emitting diode. An N-type limiting layer is arranged on the surface of one side of a substrate; the AlGaInP-based active layer is located on the surface of one side, deviating from the substrate, of the N-type limiting layer; the doping type limiting layer is arranged on the surface of one side, deviating from the N type limiting layer, of the AlGaInP-based active layer, and the doping type limiting layer is provided with a built-in electric field; and the P-type window layer is located on the surface of one side, deviating from the AlGaInP-based active layer, of the doped limiting layer. On the basis, a built-in electric field of the doping type limiting layer forms drift force on charged impurity ions, diffusion of a P type doping agent to the AlGaInP-based active layer can be effectively blocked, the influence on the luminous efficiency of the light emitting diode caused by deep energy level impurity defects formed in the AlGaInP-based active layer is avoided, and therefore the luminous efficiency and long-term reliability of the light emitting diode are improved.

Description

Technical Field

[0001] This invention relates to the field of epitaxial technology of light-emitting diodes, and more particularly to a semiconductor epitaxial structure and a light-emitting diode. Background Technology

[0002] Light-emitting diodes (LEDs) have advantages such as high luminous intensity, high efficiency, small size, and long lifespan, and are considered one of the most promising light sources today. In recent years, LEDs have been widely used in daily life, such as lighting, signal display, backlighting, automotive lights, and large-screen displays. At the same time, these applications have also placed higher demands on the brightness and luminous efficiency of LEDs.

[0003] Among them, AlGaInP semiconductor light-emitting materials possess excellent bandgap tunability. By precisely adjusting the composition ratio of Al, In, and Ga, good lattice matching with GaAs substrates can be achieved, thereby covering the visible light bands such as red, orange, yellow, and yellow-green. This characteristic gives it wide application value and an important industrial position in fields such as visible light emitting diodes and red lasers.

[0004] However, in the device structure of AlGaInP-based light-emitting diodes (LEDs), the p-type layer is typically achieved through vacancy conductivity by doping with Mg ions. Mg, as one of the most commonly used p-type dopants, has advantages such as a shallow acceptor level and high doping efficiency, but its doping concentration and distribution characteristics significantly affect the aging reliability of the LED. Specifically, the deep-level traps introduced by Mg doping can capture electrons in charge carriers, increasing the probability of non-radiative recombination and thus accelerating the device aging process. On the other hand, high concentrations of p-type doping may cause material decomposition or migration under high-temperature operating conditions, affecting the long-term stability and reliability of the device.

[0005] In view of this, the inventors specifically designed a semiconductor epitaxial structure and a light-emitting diode, which led to this invention. Summary of the Invention

[0006] The purpose of this invention is to provide a semiconductor epitaxial structure and a light-emitting diode, which effectively solves the reliability problems existing in the current AlGaInP-based light-emitting diodes.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] An epitaxial structure for a light-emitting diode includes:

[0009] Substrate;

[0010] An N-type confinement layer is located on one side surface of the substrate;

[0011] An AlGaInP-based active layer is located on the surface of the N-type confinement layer facing away from the substrate.

[0012] A doped confinement layer is disposed on the surface of the AlGaInP-based active layer away from the N-type confinement layer, and the doped confinement layer has a built-in electric field.

[0013] The P-type window layer is located on the surface of the doped confinement layer opposite to the AlGaInP-based active layer.

[0014] Preferably, the doped confinement layer includes an N-type barrier layer and a P-type confinement layer, and the N-type barrier layer and the P-type confinement layer form a PN junction, wherein the PN junction has a space charge region.

[0015] Preferably, an undoped confinement layer is provided on the surface of the AlGaInP-based active layer near the doped confinement layer, and the space charge region extends into the interior of the undoped confinement layer.

[0016] Preferably, the doped confinement layer includes an N-type barrier layer and a P-type confinement layer stacked sequentially along a first direction, and the thickness of the N-type barrier layer is less than the thickness of the P-type confinement layer; wherein, the first direction is perpendicular to the substrate and extends from the substrate to the N-type confinement layer.

[0017] Preferably, the N-type barrier layer has an N-type dopant, the P-type confinement layer has a P-type dopant, and the doping concentration of the N-type barrier layer is less than the doping concentration of the P-type confinement layer.

[0018] Preferably, the doping concentration of the N-type barrier layer is 1E16 / cm². 3 -1E18 / cm 3 Including endpoint values; the doping concentration of the P-type confinement layer is 1E17 / cm. 3 -1E19 / cm 3 .

[0019] Preferably, the thickness of the undoped confinement layer is less than the thickness of the P-type confinement layer, and the thickness of the undoped confinement layer is not less than the thickness of the N-type barrier layer.

[0020] Preferably, the thickness of the P-type confinement layer is 10 to 30 times the thickness of the N-type barrier layer.

[0021] Preferably, the N-type barrier layer includes an N-type AIP layer, and the P-type confinement layer includes a P-type AlInP confinement layer.

[0022] Preferably, the thickness of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the P-type confinement layer is 100nm-1000nm, including the endpoint values.

[0023] Preferably, the undoped confinement layer includes an undoped AIP confinement layer.

[0024] Preferably, the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0025] Preferably, the P-type confinement layer includes a first P-type confinement layer and a second P-type confinement layer; wherein the N-type barrier layer and the first P-type confinement layer are stacked alternately to form a periodic structure, and adjacent N-type barrier layers and the first P-type confinement layer form the PN junction; the second P-type confinement layer is disposed on the side surface of the periodic structure near the P-type window layer.

[0026] Preferably, the number of periods in the periodic structure is 2-20, including endpoint values.

[0027] Preferably, an undoped confinement layer is provided on the surface of the AlGaInP-based active layer near the doped confinement layer, and the space charge region extends into the interior of the undoped confinement layer.

[0028] Preferably, the thickness of the undoped confinement layer is less than the thickness of the second P-type confinement layer, and the thickness of the undoped confinement layer is not less than the single-layer thickness of the N-type barrier layer.

[0029] Preferably, the thickness of the second P-type confinement layer is 10 to 30 times the thickness of the N-type barrier layer.

[0030] Preferably, the N-type barrier layer includes an N-type AIP layer, the first P-type confinement layer includes a P-type AlP confinement layer, the second P-type confinement layer includes a P-type AlInP confinement layer, and the undoped confinement layer includes an undoped AIP confinement layer.

[0031] Preferably, the thickness of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the P-type AlP confinement layer is 5nm-50nm, including the endpoint values; the thickness of the P-type AlInP confinement layer is 100nm-1000nm, including the endpoint values; and the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0032] Preferably, the N-type barrier layer has an N-type dopant, the first P-type confinement layer and the second P-type confinement layer each have a P-type dopant, and the doping concentration of the N-type barrier layer is less than the doping concentration of the second P-type confinement layer.

[0033] Preferably, the doping concentration of the N-type barrier layer is 1E16 / cm². 3 -1E18 / cm 3 Including endpoint values; the doping concentration of the first P-type confinement layer is 1E16 / cm². 3 -1E18 / cm 3 Including endpoint values; the doping concentration of the second P-type confinement layer is 1E17 / cm. 3 -1E19 / cm 3 .

[0034] Preferably, the light-emitting diode comprises the semiconductor epitaxial structure described in any of the preceding claims.

[0035] As described above, the semiconductor epitaxial structure provided by this invention comprises: a substrate, an N-type confinement layer, an AlGaInP-based active layer, a doped confinement layer, and a P-type window layer. The N-type confinement layer is located on one side surface of the substrate; the AlGaInP-based active layer is located on the side surface of the N-type confinement layer opposite to the substrate; the doped confinement layer is disposed on the side surface of the AlGaInP-based active layer opposite to the N-type confinement layer and has a built-in electric field; the P-type window layer is located on the side surface of the doped confinement layer opposite to the AlGaInP-based active layer. Based on this, the built-in electric field of the doped confinement layer forms a drift force on charged impurity ions, effectively preventing the diffusion of P-type dopants into the AlGaInP-based active layer. This avoids the impact of deep-level impurity defects in the AlGaInP-based active layer on the luminous efficiency of the light-emitting diode, thereby improving the luminous efficiency and long-term reliability of the light-emitting diode.

[0036] Secondly, by setting "the doped confinement layer includes an N-type barrier layer and a P-type confinement layer, and the N-type barrier layer and the P-type confinement layer form a PN junction, the PN junction having a space charge region," the doped confinement layer can be easily and conveniently endowed with a built-in electric field; furthermore, this can be specifically achieved as follows:

[0037] The doped confinement layer includes an N-type barrier layer and a P-type confinement layer stacked sequentially along a first direction, wherein the thickness of the N-type barrier layer is less than the thickness of the P-type confinement layer; or,

[0038] The P-type confinement layer includes a first P-type confinement layer and a second P-type confinement layer; wherein, the N-type barrier layer and the first P-type confinement layer are stacked alternately to form a periodic structure, and adjacent N-type barrier layers and the first P-type confinement layer form the PN junction; the second P-type confinement layer is disposed on the side surface of the periodic structure near the P-type window layer.

[0039] Furthermore, by providing an undoped confinement layer on the surface of the AlGaInP-based active layer near the doped confinement layer, and extending the space charge region into the undoped confinement layer, the built-in electric field of the PN junction extends to the vicinity of the active layer, forming a secondary barrier against impurity diffusion. At the same time, it isolates the N-type dopant (N-type barrier layer) from direct contact with the active layer, ensuring the purity and interface quality of the active layer.

[0040] Furthermore, by setting the thickness relationship between the N-type barrier layer, the P-type confinement layer (second P-type confinement layer), and even the undoped confinement layer, as well as the doping concentration relationship between the N-type barrier layer and the P-type confinement layer (second P-type confinement layer), the complete depletion of the N-type dopant can be ensured, thereby further improving the purity and interface quality of the active layer.

[0041] The present invention also provides a light-emitting diode, which is obtained based on the above-described semiconductor epitaxial structure and has the above-described beneficial effects. Attached Figure Description

[0042] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0043] Figure 1 This is a schematic diagram of a semiconductor epitaxial structure provided in an embodiment of the present invention;

[0044] Figure 2 This is a schematic diagram of the structure of a doped confinement layer of a semiconductor epitaxial structure provided in Embodiment 1 of the present invention;

[0045] Figure 3 This is a schematic diagram of the structure of an AlGaInP-based active layer of a semiconductor epitaxial structure provided in an embodiment of the present invention;

[0046] Figure 4 This is a schematic diagram of the structure of a doped confinement layer of a semiconductor epitaxial structure provided in Embodiment 2 of the present invention;

[0047] Explanation of symbols in the diagram:

[0048] 1. Substrate;

[0049] 2. Buffer layer;

[0050] 3. Etching the stop layer;

[0051] 4. N-type ohmic contact layer;

[0052] 5. N-type current spreading layer;

[0053] 6. N-type confinement layer;

[0054] 7. AlGaInP-based active layer; 71. Well layer; 72. Barrier layer;

[0055] 8. Undoped confinement layer;

[0056] 9. Doped confinement layer; 91. N-type barrier layer; 92. P-type confinement layer; 92.1. First P-type confinement layer; 92.2. Second P-type confinement layer;

[0057] 10. P-type window layer. Detailed Implementation

[0058] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0059] Example 1

[0060] like Figure 1 As shown, a light-emitting diode epitaxial structure includes:

[0061] Substrate 1;

[0062] N-type confinement layer 6, the N-type confinement layer 6 being located on one side surface of the substrate 1;

[0063] AlGaInP-based active layer 7, wherein the AlGaInP-based active layer 7 is located on the side surface of the N-type confinement layer 6 facing away from the substrate 1;

[0064] A doped confinement layer 9 is disposed on the surface of the AlGaInP-based active layer 7 away from the N-type confinement layer 6, and the doped confinement layer 9 has a built-in electric field.

[0065] The P-type window layer 10 is located on the side surface of the doped confinement layer 9 facing away from the AlGaInP-based active layer 7.

[0066] Preferably, the doped confinement layer 9 includes an N-type barrier layer and a P-type confinement layer, and the N-type barrier layer and the P-type confinement layer form a PN junction, wherein the PN junction has a space charge region.

[0067] Preferably, an undoped confinement layer 8 is provided on the surface of the AlGaInP-based active layer 7 near the doped confinement layer 9, and the space charge region extends into the interior of the undoped confinement layer 8.

[0068] It is worth mentioning that the type of substrate 1 is not limited in the semiconductor epitaxial structure of this embodiment. For example, substrate 1 can be, but is not limited to, one of GaAs, InP, and GaP; this embodiment uses GaAs as substrate 1 as an example for explanation. Correspondingly, the specific material types of the N-type confinement layer 6, AlGaInP-based active layer 7, and P-type window layer 10 are also not limited in the light-emitting diode of this embodiment, as long as AlGaInP-based active layer 7 is used. For example, N-type confinement layer 6 can be an N-type AlInP confinement layer, AlGaInP-based active layer 7 can be an AlGaInP active layer, and P-type window layer 10 can be a P-type GaP window layer.

[0069] Specifically, such as Figure 2 As shown, the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92 stacked sequentially along a first direction, and the thickness of the N-type barrier layer 91 is less than the thickness of the P-type confinement layer 92; wherein, the first direction is perpendicular to the substrate 1 and points from the substrate 1 to the N-type confinement layer 92.

[0070] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 has an N-type dopant, the P-type confinement layer 92 has a P-type dopant, and the doping concentration of the N-type barrier layer 91 is less than the doping concentration of the P-type confinement layer 92.

[0071] Based on the above embodiments, in one embodiment of this application, the doping concentration of the N-type barrier layer 91 is 1E16 / cm². 3 -1E18 / cm 3 This includes endpoint values; the doping concentration of the P-type confinement layer 92 is 1E17 / cm². 3 -1E19 / cm 3 .

[0072] Based on the above embodiments, in one embodiment of this application, the thickness of the undoped confinement layer 8 is less than the thickness of the P-type confinement layer 92, and the thickness of the undoped confinement layer 8 is not less than the thickness of the N-type barrier layer 91.

[0073] Based on the above embodiments, in one embodiment of this application, the thickness of the P-type confinement layer 92 is 10 to 30 times the thickness of the N-type barrier layer 91.

[0074] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 includes an N-type AIP layer, and the P-type confinement layer 92 includes a P-type AlInP confinement layer.

[0075] Based on the above embodiments, in one embodiment of this application, the thickness of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the P-type confinement layer 92 is 100nm-1000nm, including the endpoint values.

[0076] Based on the above embodiments, in one embodiment of this application, the undoped confinement layer 8 includes an undoped AIP confinement layer.

[0077] Based on the above embodiments, in one embodiment of this application, the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0078] In an optional embodiment, a buffer layer 2 and an etching stop layer 3 are further included. The buffer layer 2 is disposed above the substrate 1 to eliminate the influence of lattice defects in the substrate 1 on subsequent semiconductor layers. The material of the buffer layer 2 can be one of GaAs, GaP, or InP. In this embodiment, the buffer layer 2 is an N-type GaAs buffer layer 2.

[0079] An etching stop layer 3 is disposed above the buffer layer 2 and serves as an etching stop layer 3 for dry etching or wet etching. In this embodiment, the etching stop layer 3 is an N-type GaInP etching stop layer 3.

[0080] In an optional embodiment, an N-type ohmic contact layer 4 is further included, which is disposed above the etching stop layer 3 to form a good ohmic contact. Optionally, the N-type ohmic contact layer 4 is an N-type GaAs ohmic contact layer.

[0081] In an optional embodiment, an N-type current spreading layer 5 is further disposed on the surface of the N-type ohmic contact layer 4 for current spreading. Optionally, the N-type current spreading layer 5 includes an N-type AlGaInP current spreading layer.

[0082] This invention also provides a method for preparing a semiconductor epitaxial structure, the method comprising the following steps:

[0083] S01, Provide a substrate 1;

[0084] Optionally, the substrate 1 can be, but is not limited to, one of GaAs, InP and GaP; this embodiment takes GaAs substrate 1 as an example for illustration, wherein the thickness can be set according to requirements, and optionally, the thickness of GaAs substrate 1 is between 200μm and 500μm.

[0085] S02. A buffer layer 2 is formed on the surface of the substrate 1 to eliminate the influence of lattice defects of the substrate 1 on subsequent semiconductor layers.

[0086] Optionally, the buffer layer 2 is an N-type GaAs buffer layer 2;

[0087] Specifically, using MOCVD technology, a GaAs substrate 1 is placed in a reaction chamber, and an AsH3 source and a TMGa source are introduced. A GaAs material layer is grown in the temperature range of 600-800℃, with a thickness between 200nm and 1000nm, and an N-type doping source (which can be a Si / Te source) is incorporated, with a carrier concentration ranging from 1E18 / cm3 to 1E19 / cm3. 3 To obtain an N-type GaAs buffer layer 2.

[0088] S03, an etching stop layer 3 is formed on the surface of the buffer layer 2;

[0089] Optionally, the etching stop layer 3 is an N-type GaInP etching stop layer 3, which is used as an etching stop layer 3 for dry etching or wet etching.

[0090] Specifically, the temperature is controlled at 630-750℃, the AsH3 source is switched to a PH3 source, and a TMIn source is introduced to grow a GaInP material layer with a thickness between 100nm and 1000nm. An N-type doping source (which can be a Si / Te source) is then incorporated, with a carrier concentration of 1E17 / cm³. 3 -1E19 / cm 3 To obtain an N-type GaInP etching stop layer 3, which serves as a stop protection layer for the subsequent etching removal of the substrate 1 and the buffer layer 2.

[0091] S04. An N-type ohmic contact layer 4 is formed on the surface of the etched stop layer 3 to form a good ohmic contact.

[0092] Optionally, the N-type ohmic contact layer 4 includes an N-type GaAs ohmic contact layer;

[0093] Specifically, at a temperature range of 600-800℃, the PH3 source is switched to an AsH3 source, the TMIn source is turned off, and a GaAs material layer with a thickness between 10nm and 50nm is grown. An N-type doping source (which can be a Si / Te source) is incorporated, and the carrier concentration is 6E17 / cm³. 3 -1E20 / cm 3 To obtain an N-type GaAs ohmic contact layer.

[0094] S05. An N-type current spreading layer 5 is formed on the surface of the N-type ohmic contact layer 4 for current spreading.

[0095] Optionally, the N-type current spreading layer 5 includes an N-type AlGaInP current spreading layer;

[0096] Specifically, the temperature is maintained at 600-800℃, the AsH3 source is turned off, and an AlGaInP material layer with a thickness between 1µm and 5µm is grown by controlling the TMAl, TMIn, PH3, and TMGa sources. An N-type doping source (which can be a Si / Te source) is then introduced, with a carrier concentration of 1E17 / cm³. 3 -1E20 / cm 3 To obtain an N-type AlGaInP current-spreading layer.

[0097] S06. An N-type confinement layer 6 is formed on the surface of the N-type current spreading layer 5 to prevent electron overflow.

[0098] Optionally, the N-type confinement layer 6 includes an N-type AlInP confinement layer;

[0099] Specifically, the TMGa source is turned off, and an AlInP material layer with a thickness between 100 nm and 1000 nm is grown. An N-type doping source (which can be a Si or Te source) is then incorporated, with a carrier concentration of 1E17 / cm². 3 -1E19 / cm 3 To obtain an N-type AlInP confinement layer.

[0100] S07. An AlGaInP-based active layer 7 is formed on the surface of the N-type confinement layer 6, which provides a region for providing light radiation for electron-hole recombination. Different materials can be selected according to different emission wavelengths. The AlGaInP-based active layer 7 can be a periodic structure of a single quantum well or multiple quantum wells.

[0101] Optionally, such as Figure 3 As shown, the AlGaInP-based active layer 7 includes a well layer 71 and a barrier layer 72, wherein the barrier layer 72 has a larger band gap than the well layer 71. By adjusting the composition ratio of the semiconductor material in the active layer, it is desired to radiate light of different wavelengths. In this embodiment, the AlGaInP-based active layer 7 is a multi-quantum well layer 71, and the repetition period of the well layer 71 and the barrier layer 72 is between 5 and 50; the material of the active layer is Al. x Ga 1-x InP, 0≤x≤0.8;

[0102] Specifically, by maintaining the temperature at 600-800℃ and controlling the TMAl source, TMIn source, PH3 source and TMGa source, and adjusting the Al composition, an AlGaInP-based active layer 7 is obtained.

[0103] S08. An undoped confinement layer 8 is formed on the surface of the AlGaInP-based active layer 7 to form a barrier against impurity diffusion.

[0104] Optionally, the undoped confinement layer 8 includes an undoped AIP confinement layer.

[0105] Optionally, the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0106] Specifically, the TMGa source is turned off, and an AlInP material layer with a thickness between 10nm and 100nm is grown to obtain an undoped AIP confinement layer.

[0107] S09. A doped confinement layer 9 is formed on the surface of the undoped confinement layer 8, and the doped confinement layer 9 has a built-in electric field, which can effectively block the diffusion of P-type dopant to the AlGaInP-based active layer 7, and avoid the impact of deep-level impurity defects formed in the AlGaInP-based active layer 7 on the luminous efficiency of the light-emitting diode.

[0108] Optionally, the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92, and the N-type barrier layer 91 and the P-type confinement layer 92 form a PN junction, the PN junction having a space charge region, and the space charge region extending into the interior of the undoped confinement layer 8.

[0109] Specifically, the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92 stacked sequentially along a first direction, and the thickness of the N-type barrier layer 91 is less than the thickness of the P-type confinement layer 92; wherein, the first direction is perpendicular to the substrate 1 and points from the substrate 1 to the N-type confinement layer 6.

[0110] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 has an N-type dopant, the P-type confinement layer 92 has a P-type dopant, and the doping concentration of the N-type barrier layer 91 is less than the doping concentration of the P-type confinement layer 92. The P-type dopant can be a Mg / C / Zn doping source, and the N-type dopant can be a Si or Te source.

[0111] Based on the above embodiments, in one embodiment of this application, the doping concentration of the N-type barrier layer 91 is 1E16 / cm². 3 -1E18 / cm 3 This includes endpoint values; the doping concentration of the P-type confinement layer 92 is 1E17 / cm². 3 -1E19 / cm 3 .

[0112] Based on the above embodiments, in one embodiment of this application, the thickness of the undoped confinement layer 8 is less than the thickness of the P-type confinement layer 92, and the thickness of the undoped confinement layer 8 is not less than the thickness of the N-type barrier layer 91.

[0113] Based on the above embodiments, in one embodiment of this application, the thickness of the P-type confinement layer 92 is 10 to 30 times the thickness of the N-type barrier layer 91.

[0114] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 includes an N-type AIP layer, and the P-type confinement layer 92 includes a P-type AlInP confinement layer.

[0115] Based on the above embodiments, in one embodiment of this application, the thickness of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the P-type confinement layer 92 is 100nm-1000nm, including the endpoint values.

[0116] S10. A P-type window layer 10 is formed on the surface of the doped confinement layer 9 to form good ohmic contact and current spread; optionally, the window layer includes a P-type GaP window layer.

[0117] Specifically, the TMAl and TMIn sources are turned off, and the PH3 and TMGa sources are controlled to grow a GaP material layer with a thickness between 5µm and 20µm. A p-type dopant source (which can be a Mg / C / Zn dopant source) is then incorporated, with a carrier concentration of 1E17 / cm³. 3 -1E20 / cm 3 To obtain a P-type GaP window layer.

[0118] Based on the above embodiments, in one embodiment of this application, the light-emitting diode includes the semiconductor epitaxial structure described in any of the above claims. As can be seen from the above technical solutions, the semiconductor epitaxial structure provided by the present invention comprises: a substrate 1, an N-type confinement layer 6, an AlGaInP-based active layer 7, a doped confinement layer 9, and a P-type window layer 10; wherein, the N-type confinement layer 6 is located on one side surface of the substrate 1; the AlGaInP-based active layer 7 is located on the side surface of the N-type confinement layer 6 opposite to the substrate 1; the doped confinement layer 9 is disposed on the side surface of the AlGaInP-based active layer 7 opposite to the N-type confinement layer 6, and the doped confinement layer 9 has a built-in electric field; the P-type window layer 10 is located on the side surface of the doped confinement layer 9 opposite to the AlGaInP-based active layer 7. Based on this, the built-in electric field of the doped confinement layer 9 forms a drift force on charged impurity ions, which can effectively block the diffusion of P-type dopants into the AlGaInP-based active layer 7, avoid the impact of deep-level impurity defects formed in the AlGaInP-based active layer 7 on the luminous efficiency of the light-emitting diode, thereby improving the luminous efficiency and long-term reliability of the light-emitting diode.

[0119] Secondly, by setting "the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92, and the N-type barrier layer 91 and the P-type confinement layer 92 form a PN junction, and the PN junction has a space charge region", the doped confinement layer 9 can be made to have a built-in electric field simply and conveniently. This can be specifically implemented as follows: the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92 stacked sequentially along a first direction, and the thickness of the N-type barrier layer 91 is less than the thickness of the P-type confinement layer 92.

[0120] Furthermore, by providing an undoped confinement layer 8 on the surface of the AlGaInP-based active layer 7 near the doped confinement layer 9, and by extending the space charge region into the interior of the undoped confinement layer 8, the built-in electric field of the PN junction extends to the vicinity of the active layer, forming a secondary barrier against impurity diffusion. At the same time, it isolates the N-type dopant (N-type barrier layer 91) from direct contact with the active layer, ensuring the purity and interface quality of the active layer.

[0121] Furthermore, by setting the thickness relationship of the N-type barrier layer 91, the P-type confinement layer 92, and even the undoped confinement layer 8, as well as the doping concentration relationship of the N-type barrier layer 91 and the P-type confinement layer 92, the complete depletion of the N-type dopant can be ensured, thereby further improving the purity and interface quality of the active layer.

[0122] The present invention also provides a light-emitting diode, which is obtained based on the above-described semiconductor epitaxial structure and has the above-described beneficial effects.

[0123] Example 2

[0124] like Figure 1 As shown, a light-emitting diode epitaxial structure includes:

[0125] Substrate 1;

[0126] N-type confinement layer 6, the N-type confinement layer 6 being located on one side surface of the substrate 1;

[0127] AlGaInP-based active layer 7, wherein the AlGaInP-based active layer 7 is located on the side surface of the N-type confinement layer 6 facing away from the substrate 1;

[0128] A doped confinement layer 9 is disposed on the surface of the AlGaInP-based active layer 7 away from the N-type confinement layer 6, and the doped confinement layer 9 has a built-in electric field.

[0129] The P-type window layer 10 is located on the side surface of the doped confinement layer 9 facing away from the AlGaInP-based active layer 7.

[0130] Preferably, the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer, and the N-type barrier layer and the P-type confinement layer form a PN junction, wherein the PN junction has a space charge region.

[0131] Specifically, such as Figure 4 As shown, the P-type confinement layer includes a first P-type confinement layer 92.1 and a second P-type confinement layer 92.2; wherein, the N-type barrier layer 91 and the first P-type confinement layer 92.1 are stacked alternately to form a periodic structure, and adjacent N-type barrier layers 91 and first P-type confinement layers 92.1 form the PN junction; the second P-type confinement layer 92.2 is disposed on the side surface of the periodic structure near the P-type window layer 10.

[0132] Based on the above embodiments, in one embodiment of this application, the number of periods of the periodic structure is 2-20, including endpoint values.

[0133] Based on the above embodiments, in one embodiment of this application, an undoped confinement layer 8 is provided on the side surface of the AlGaInP-based active layer 7 near the doped confinement layer 9, and the space charge region extends into the interior of the undoped confinement layer 8.

[0134] Based on the above embodiments, in one embodiment of this application, the thickness of the undoped confinement layer 8 is less than the thickness of the second P-type confinement layer 92.2, and the thickness of the undoped confinement layer 8 is not less than the single-layer thickness of the N-type barrier layer 91.

[0135] Based on the above embodiments, in one embodiment of this application, the thickness of the second P-type confinement layer 92.2 is 10 to 30 times the thickness of the N-type barrier layer 91.

[0136] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 includes an N-type AIP layer, the first P-type confinement layer 92.1 includes a P-type AlP confinement layer, the second P-type confinement layer 92.2 includes a P-type AlInP confinement layer, and the undoped confinement layer 8 includes an undoped AIP confinement layer.

[0137] Based on the above embodiments, in one embodiment of this application, the thickness of the single layer of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the single layer of the P-type AlP confinement layer is 5nm-50nm, including the endpoint values; the thickness of the P-type AlInP confinement layer is 100nm-1000nm, including the endpoint values; and the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0138] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 has an N-type dopant, the first P-type confinement layer 92.1 and the second P-type confinement layer 92.2 each have a P-type dopant, and the doping concentration of the N-type barrier layer 91 is less than the doping concentration of the second P-type confinement layer 92.2.

[0139] Based on the above embodiments, in one embodiment of this application, the doping concentration of the N-type barrier layer 91 is 1E16 / cm². 3 -1E18 / cm 3 This includes endpoint values; the doping concentration of the first P-type confinement layer 92.1 is 1E16 / cm². 3 -1E18 / cm 3 This includes endpoint values; the doping concentration of the second P-type confinement layer 92.2 is 1E17 / cm². 3 -1E19 / cm 3 .

[0140] In an optional embodiment, a buffer layer 2 and an etching stop layer 3 are further included. The buffer layer 2 is disposed above the substrate 1 to eliminate the influence of lattice defects in the substrate 1 on subsequent semiconductor layers. The material of the buffer layer 2 can be one of GaAs, GaP, or InP. In this embodiment, the buffer layer 2 is an N-type GaAs buffer layer 2.

[0141] An etching stop layer 3 is disposed above the buffer layer 2 and serves as an etching stop layer 3 for dry etching or wet etching. In this embodiment, the etching stop layer 3 is an N-type GaInP etching stop layer 3.

[0142] In an optional embodiment, an N-type ohmic contact layer 4 is further included, which is disposed above the etching stop layer 3 to form a good ohmic contact. Optionally, the N-type ohmic contact layer 4 is an N-type GaAs ohmic contact layer.

[0143] In an optional embodiment, an N-type current spreading layer 5 is further disposed on the surface of the N-type ohmic contact layer 4 for current spreading. Optionally, the N-type current spreading layer 5 includes an N-type AlGaInP current spreading layer.

[0144] This invention also provides a method for preparing a semiconductor epitaxial structure, the method comprising the following steps:

[0145] S01, Provide a substrate 1;

[0146] Optionally, the substrate 1 can be, but is not limited to, one of GaAs, InP and GaP; this embodiment takes GaAs substrate 1 as an example for illustration, wherein the thickness can be set according to requirements, and optionally, the thickness of GaAs substrate 1 is between 200μm and 500μm.

[0147] S02. A buffer layer 2 is formed on the surface of the substrate 1 to eliminate the influence of lattice defects of the substrate 1 on subsequent semiconductor layers.

[0148] Optionally, the buffer layer 2 is an N-type GaAs buffer layer 2;

[0149] Specifically, using MOCVD technology, a GaAs substrate 1 is placed in a reaction chamber, and an AsH3 source and a TMGa source are introduced. A GaAs material layer is grown in the temperature range of 600-800℃, with a thickness between 200nm and 1000nm, and an N-type doping source (which can be a Si / Te source) is incorporated, with a carrier concentration ranging from 1E18 / cm3 to 1E19 / cm3. 3 To obtain an N-type GaAs buffer layer 2.

[0150] S03, an etching stop layer 3 is formed on the surface of the buffer layer 2;

[0151] Optionally, the etching stop layer 3 is an N-type GaInP etching stop layer 3, which is used as an etching stop layer 3 for dry etching or wet etching.

[0152] Specifically, the temperature is controlled at 630-750℃, the AsH3 source is switched to a PH3 source, and a TMIn source is introduced to grow a GaInP material layer with a thickness between 100nm and 1000nm. An N-type doping source (which can be a Si / Te source) is then incorporated, with a carrier concentration of 1E17 / cm³. 3 -1E19 / cm 3 To obtain an N-type GaInP etching stop layer 3, which serves as a stop protection layer for the subsequent etching removal of the substrate 1 and the buffer layer 2.

[0153] S04. An N-type ohmic contact layer 4 is formed on the surface of the etched stop layer 3 to form a good ohmic contact.

[0154] Optionally, the N-type ohmic contact layer 4 includes an N-type GaAs ohmic contact layer;

[0155] Specifically, at a temperature range of 600-800℃, the PH3 source is switched to an AsH3 source, the TMIn source is turned off, and a GaAs material layer with a thickness between 10nm and 50nm is grown. An N-type doping source (which can be a Si / Te source) is incorporated, and the carrier concentration is 6E17 / cm³. 3 -1E20 / cm3 To obtain an N-type GaAs ohmic contact layer.

[0156] S05. An N-type current spreading layer 5 is formed on the surface of the N-type ohmic contact layer 4 for current spreading.

[0157] Optionally, the N-type current spreading layer 5 includes an N-type AlGaInP current spreading layer;

[0158] Specifically, the temperature is maintained at 600-800℃, the AsH3 source is turned off, and an AlGaInP material layer with a thickness between 1µm and 5µm is grown by controlling the TMAl, TMIn, PH3, and TMGa sources. An N-type doping source (which can be a Si / Te source) is then introduced, with a carrier concentration of 1E17 / cm³. 3 -1E20 / cm 3 To obtain an N-type AlGaInP current-spreading layer.

[0159] S06. An N-type confinement layer 6 is formed on the surface of the N-type current spreading layer 5 to prevent electron overflow.

[0160] Optionally, the N-type confinement layer 6 includes an N-type AlInP confinement layer;

[0161] Specifically, the TMGa source is turned off, and an AlInP material layer with a thickness between 100 nm and 1000 nm is grown. An N-type doping source (which can be a Si or Te source) is then incorporated, with a carrier concentration of 1E17 / cm². 3 -1E19 / cm 3 To obtain an N-type AlInP confinement layer.

[0162] S07. An AlGaInP-based active layer 7 is formed on the surface of the N-type confinement layer 6, which provides a region for providing light radiation for electron-hole recombination. Different materials can be selected according to different emission wavelengths. The AlGaInP-based active layer 7 can be a periodic structure of a single quantum well or multiple quantum wells.

[0163] Optionally, such as Figure 3 As shown, the AlGaInP-based active layer 7 includes a well layer 71 and a barrier layer 72, wherein the barrier layer 72 has a larger band gap than the well layer 71. By adjusting the composition ratio of the semiconductor material in the active layer, it is desired to radiate light of different wavelengths. In this embodiment, the AlGaInP-based active layer 7 is a multi-quantum well layer 71, and the repetition period of the well layer 71 and the barrier layer 72 is between 5 and 50; the material of the active layer is Al. x Ga 1-x InP, 0≤x≤0.8;

[0164] Specifically, by maintaining the temperature at 600-800℃ and controlling the TMAl source, TMIn source, PH3 source and TMGa source, and adjusting the Al composition, an AlGaInP-based active layer 7 is obtained.

[0165] S08. An undoped confinement layer 8 is formed on the surface of the AlGaInP-based active layer 7 to form a barrier against impurity diffusion.

[0166] Optionally, the undoped confinement layer 8 includes an undoped AIP confinement layer.

[0167] Optionally, the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0168] Specifically, the TMGa source is turned off, and an AlInP material layer with a thickness between 10nm and 100nm is grown to obtain an undoped AIP confinement layer.

[0169] S09. A doped confinement layer 9 is formed on the surface of the undoped confinement layer 8, and the doped confinement layer 9 has a built-in electric field, which can effectively block the diffusion of P-type dopant to the AlGaInP-based active layer 7, and avoid the impact of deep-level impurity defects formed in the AlGaInP-based active layer 7 on the luminous efficiency of the light-emitting diode.

[0170] Optionally, the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92, and the N-type barrier layer 91 and the P-type confinement layer 92 form a PN junction, the PN junction having a space charge region, and the space charge region extending into the interior of the undoped confinement layer 8.

[0171] Specifically, the P-type confinement layer 92 includes a first P-type confinement layer 92.1 and a second P-type confinement layer 92.2; wherein the N-type barrier layer 91 and the first P-type confinement layer 92.1 are stacked alternately to form a periodic structure, and adjacent N-type barrier layers 91 and the first P-type confinement layer 92.1 form the PN junction; the second P-type confinement layer 92.2 is disposed on the side surface of the periodic structure near the P-type window layer 10.

[0172] Based on the above embodiments, in one embodiment of this application, the number of periods of the periodic structure is 2-20, including endpoint values.

[0173] Based on the above embodiments, in one embodiment of this application, an undoped confinement layer 8 is provided on the side surface of the AlGaInP-based active layer 7 near the doped confinement layer 9, and the space charge region extends into the interior of the undoped confinement layer 8.

[0174] Based on the above embodiments, in one embodiment of this application, the thickness of the undoped confinement layer 8 is less than the thickness of the second P-type confinement layer 92.2, and the thickness of the undoped confinement layer 8 is not less than the single-layer thickness of the N-type barrier layer 91.

[0175] Based on the above embodiments, in one embodiment of this application, the thickness of the second P-type confinement layer 92.2 is 10 to 30 times the thickness of the N-type barrier layer 91.

[0176] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 includes an N-type AIP layer, the first P-type confinement layer 92.1 includes a P-type AlP confinement layer, and the second P-type confinement layer 92.2 includes a P-type AlInP confinement layer.

[0177] Based on the above embodiments, in one embodiment of this application, the thickness of the single layer of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the single layer of the P-type AlP confinement layer is 5nm-50nm, including the endpoint values; the thickness of the P-type AlInP confinement layer is 100nm-1000nm, including the endpoint values; and the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

[0178] Based on the above embodiments, in one embodiment of this application, the N-type barrier layer 91 has an N-type dopant, the first P-type confinement layer 92.1 and the second P-type confinement layer 92.2 each have a P-type dopant, and the doping concentration of the N-type barrier layer 91 is less than the doping concentration of the second P-type confinement layer 92.2.

[0179] Based on the above embodiments, in one embodiment of this application, the doping concentration of the N-type barrier layer 91 is 1E16 / cm². 3 -1E18 / cm 3 This includes endpoint values; the doping concentration of the first P-type confinement layer 92.1 is 1E16 / cm². 3 -1E18 / cm 3 This includes endpoint values; the doping concentration of the second P-type confinement layer 92.2 is 1E17 / cm². 3 -1E19 / cm 3 .

[0180] S10. A P-type window layer 10 is formed on the surface of the doped confinement layer 9 to form good ohmic contact and current spread; optionally, the window layer includes a P-type GaP window layer.

[0181] Specifically, the TMAl and TMIn sources are turned off, and the PH3 and TMGa sources are controlled to grow a GaP material layer with a thickness between 5µm and 20µm. A p-type dopant source (which can be a Mg / C / Zn dopant source) is then incorporated, with a carrier concentration of 1E17 / cm³. 3 -1E20 / cm 3 To obtain a P-type GaP window layer.

[0182] Based on the above embodiments, in one embodiment of this application, the light-emitting diode includes the semiconductor epitaxial structure described in any of the above claims.

[0183] As can be seen from the above technical solution, the semiconductor epitaxial structure provided by the present invention includes: a substrate 1, an N-type confinement layer 6, an AlGaInP-based active layer 7, a doped confinement layer 9, and a P-type window layer 10; wherein, the N-type confinement layer 6 is located on one side surface of the substrate 1; the AlGaInP-based active layer 7 is located on the side surface of the N-type confinement layer 6 opposite to the substrate 1; the doped confinement layer 9 is disposed on the side surface of the AlGaInP-based active layer 7 opposite to the N-type confinement layer 6, and the doped confinement layer 9 has a built-in electric field; the P-type window layer 10 is located on the side surface of the doped confinement layer 9 opposite to the AlGaInP-based active layer 7. Based on this, the built-in electric field of the doped confinement layer 9 forms a drift force on charged impurity ions, which can effectively block the diffusion of P-type dopants into the AlGaInP-based active layer 7, avoid the impact of deep-level impurity defects formed in the AlGaInP-based active layer 7 on the luminous efficiency of the light-emitting diode, thereby improving the luminous efficiency and long-term reliability of the light-emitting diode.

[0184] Secondly, by setting "the doped confinement layer 9 includes an N-type barrier layer 91 and a P-type confinement layer 92, and the N-type barrier layer 91 and the P-type confinement layer 92 form a PN junction, and the PN junction has a space charge region", the doped confinement layer 9 can be easily and conveniently made to have a built-in electric field. This can be specifically implemented as follows: the P-type confinement layer 92 includes a first P-type confinement layer 92.1 and a second P-type confinement layer 92.2; wherein the N-type barrier layer 91 and the first P-type confinement layer 92.1 form a periodic structure by alternating stacking, and adjacent N-type barrier layers 91 and first P-type confinement layers 92.1 form the PN junction; the second P-type confinement layer 92.2 is disposed on the side surface of the periodic structure near the P-type window layer 10.

[0185] Furthermore, by providing an undoped confinement layer 8 on the surface of the AlGaInP-based active layer 7 near the doped confinement layer 9, and by extending the space charge region into the interior of the undoped confinement layer 8, the built-in electric field of the PN junction extends to the vicinity of the active layer, forming a secondary barrier against impurity diffusion. At the same time, it isolates the N-type dopant (N-type barrier layer 91) from direct contact with the active layer, ensuring the purity and interface quality of the active layer.

[0186] Furthermore, by setting the thickness relationship of the N-type barrier layer 91, the second P-type confinement layer 92.2, and even the undoped confinement layer 8, as well as the doping concentration relationship of the N-type barrier layer 91 and the second P-type confinement layer 92.2, the complete depletion of the N-type dopant can be ensured, thereby further improving the purity and interface quality of the active layer.

[0187] The present invention also provides a light-emitting diode, which is obtained based on the above-described semiconductor epitaxial structure and has the above-described beneficial effects.

[0188] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0189] It should also be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0190] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A light-emitting diode epitaxial structure, characterized in that, include: Substrate; An N-type confinement layer is located on one side surface of the substrate; An AlGaInP-based active layer is located on the surface of the N-type confinement layer facing away from the substrate. A doped confinement layer is disposed on the surface of the AlGaInP-based active layer away from the N-type confinement layer, and the doped confinement layer has a built-in electric field. The P-type window layer is located on the surface of the doped confinement layer opposite to the AlGaInP-based active layer.

2. The semiconductor epitaxial structure according to claim 1, characterized in that, The doped confinement layer includes an N-type barrier layer and a P-type confinement layer, and the N-type barrier layer and the P-type confinement layer form a PN junction, which has a space charge region.

3. The semiconductor epitaxial structure according to claim 2, characterized in that, An undoped confinement layer is provided on the surface of the AlGaInP-based active layer near the doped confinement layer, and the space charge region extends into the interior of the undoped confinement layer.

4. The semiconductor epitaxial structure according to claim 2, characterized in that, The doped confinement layer includes an N-type barrier layer and a P-type confinement layer stacked sequentially along a first direction, wherein the thickness of the N-type barrier layer is less than the thickness of the P-type confinement layer; wherein the first direction is perpendicular to the substrate and extends from the substrate toward the N-type confinement layer.

5. The semiconductor epitaxial structure according to claim 4, characterized in that, The N-type barrier layer has an N-type dopant, the P-type confinement layer has a P-type dopant, and the doping concentration of the N-type barrier layer is less than that of the P-type confinement layer.

6. The semiconductor epitaxial structure according to claim 5, characterized in that, The doping concentration of the N-type barrier layer is 1E16 / cm². 3 -1E18 / cm 3 Including endpoint values; the doping concentration of the P-type confinement layer is 1E17 / cm. 3 -1E19 / cm 3 .

7. The semiconductor epitaxial structure according to claim 3, characterized in that, The thickness of the undoped confinement layer is less than the thickness of the P-type confinement layer, and the thickness of the undoped confinement layer is not less than the thickness of the N-type barrier layer.

8. The semiconductor epitaxial structure according to claim 4, characterized in that, The thickness of the P-type confinement layer is 10 to 30 times the thickness of the N-type barrier layer.

9. The semiconductor epitaxial structure according to claim 2, characterized in that, The N-type barrier layer includes an N-type AIP layer, and the P-type confinement layer includes a P-type AlInP confinement layer.

10. The semiconductor epitaxial structure according to claim 9, characterized in that, The thickness of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the P-type confinement layer is 100nm-1000nm, including the endpoint values.

11. The semiconductor epitaxial structure according to claim 3, characterized in that, The undoped confinement layer includes an undoped AIP confinement layer.

12. The semiconductor epitaxial structure according to claim 11, characterized in that, The thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

13. The semiconductor epitaxial structure according to claim 2, characterized in that, The P-type confinement layer includes a first P-type confinement layer and a second P-type confinement layer; wherein, the N-type barrier layer and the first P-type confinement layer are stacked alternately to form a periodic structure, and adjacent N-type barrier layers and the first P-type confinement layer form the PN junction; the second P-type confinement layer is disposed on the side surface of the periodic structure near the P-type window layer.

14. The semiconductor epitaxial structure according to claim 13, characterized in that, An undoped confinement layer is provided on the surface of the AlGaInP-based active layer near the doped confinement layer, and the space charge region extends into the interior of the undoped confinement layer.

15. The semiconductor epitaxial structure according to claim 14, characterized in that, The thickness of the undoped confinement layer is less than the thickness of the second P-type confinement layer, and the thickness of the undoped confinement layer is not less than the single-layer thickness of the N-type barrier layer.

16. The semiconductor epitaxial structure according to claim 13, characterized in that, The thickness of the second P-type confinement layer is 10 to 30 times the thickness of the N-type barrier layer.

17. The semiconductor epitaxial structure according to claim 13, characterized in that, The N-type barrier layer includes an N-type AIP layer, the first P-type confinement layer includes a P-type AlP confinement layer, the second P-type confinement layer includes a P-type AlInP confinement layer, and the undoped confinement layer includes an undoped AIP confinement layer.

18. The semiconductor epitaxial structure according to claim 17, characterized in that, The thickness of the N-type AIP layer is 5nm-50nm, including the endpoint values; the thickness of the P-type AlP confinement layer is 5nm-50nm, including the endpoint values; the thickness of the P-type AlInP confinement layer is 100nm-1000nm, including the endpoint values; and the thickness of the undoped AIP confinement layer is 10nm-100nm, including the endpoint values.

19. The semiconductor epitaxial structure according to claim 13, characterized in that, The N-type barrier layer has an N-type dopant, the first P-type confinement layer and the second P-type confinement layer each have a P-type dopant, and the doping concentration of the N-type barrier layer is less than the doping concentration of the second P-type confinement layer.

20. The semiconductor epitaxial structure according to claim 19, characterized in that, The doping concentration of the N-type barrier layer is 1E16 / cm². 3 -1E18 / cm 3 Including endpoint values; the doping concentration of the first P-type confinement layer is 1E16 / cm². 3 -1E18 / cm 3 Including endpoint values; the doping concentration of the second P-type confinement layer is 1E17 / cm. 3 -1E19 / cm 3 .

21. A light-emitting diode, characterized in that, The light-emitting diode comprises the semiconductor epitaxial structure according to any one of claims 1 to 20.

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