Package carrier and manufacturing method and jig thereof

Abstract

The invention provides a packaging carrier plate, a manufacturing method thereof and a jig, and the manufacturing method of the packaging carrier plate comprises the following steps: providing a glass substrate; the glass substrate comprises at least one first through hole; the first through hole penetrates through the glass substrate along a first direction; the first through hole has a first diameter; the first direction is the thickness direction of the glass substrate; providing a jig; the jig comprises a substrate and a columnar structure formed on one side of the substrate; the columnar structure has a second diameter; the second diameter is smaller than the first diameter; the height of the columnar structure is greater than or equal to the thickness of the glass substrate; the columnar structure of the jig is inserted into the first through hole, so that a first gap is formed between the columnar structure and the glass substrate; arranging a buffer material in the first gap, and at least forming a first buffer layer on the inner wall of the first through hole; and at least part of the jig is removed from the glass substrate. The columnar structure is inserted into the first through hole to form the first gap, so that the thickness of the first buffer layer is uniquely determined by the diameter difference, and the uniformity of the first buffer layer is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to a packaging substrate, its manufacturing method, and a fixture. Background Technology

[0002] In the field of semiconductor packaging technology, the packaging substrate serves as the core intermediary layer connecting the chip to external circuits, providing electrical connections, protection, support, and heat dissipation for the chip. Driven by a combination of factors including electrical, thermal, size, functionality, and cycle cost, packaging substrates are developing towards thinner profiles, higher heat dissipation, finer circuitry, higher integration, and shorter manufacturing cycles.

[0003] However, the performance of the current packaging substrate needs to be improved. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a packaging carrier board and its manufacturing method and fixture, so as to solve the above-mentioned technical problems.

[0005] Based on the above objectives, one embodiment of this application provides a method for manufacturing a packaging substrate, comprising: providing a glass substrate; the glass substrate including at least one first through-hole; the first through-hole penetrating the glass substrate along a first direction; the first through-hole having a first diameter; the first direction being the thickness direction of the glass substrate; providing a fixture; the fixture including a substrate and a columnar structure formed on one side of the substrate; the columnar structure having a second diameter; the second diameter being smaller than the first diameter; the height of the columnar structure being greater than or equal to the thickness of the glass substrate; inserting the columnar structure of the fixture into the first through-hole, such that a first gap exists between the columnar structure and the glass substrate; disposing a buffer material in the first gap, forming a first buffer layer at least on the inner wall of the first through-hole; and removing at least a portion of the fixture from the glass substrate.

[0006] In some embodiments, the step of inserting the columnar structure of the fixture into the first through hole to create a first gap between the columnar structure and the glass substrate includes: setting a second gap between the substrate and the glass substrate; the step of disposing a buffer material in the first gap to form a first buffer layer at least on the inner wall of the first through hole further includes: disposing a second buffer layer in the second gap, and disposing a third buffer layer on the side of the glass substrate away from the substrate.

[0007] In some embodiments, the step of removing at least a portion of the fixture from the glass substrate includes: removing the columnar structure from the first buffer layer, wherein the first buffer layer forms a second through-hole.

[0008] In some embodiments, the columnar structure is detachably connected to the substrate; the columnar structure is made of a conductive material; and the step of removing at least a portion of the fixture from the glass substrate includes: separating the substrate from the columnar structure and retaining the columnar structure in the encapsulation carrier as a conductive structure penetrating the glass substrate.

[0009] In some embodiments, the buffer material is a solid film-forming material, and the step of placing the buffer material in the first gap to form a first buffer layer at least on the inner wall of the first through hole includes: melting or softening the solid film-forming material by hot pressing or vacuum pressing, filling it into the first gap, and solidifying it to form the first buffer layer.

[0010] In some embodiments, the solid film-forming material is an organic polymer dry film; the Young's modulus of the organic polymer dry film is less than or equal to 3 GPa.

[0011] One embodiment of this application provides a packaging carrier, prepared using the packaging carrier manufacturing method described in any of the above claims, comprising: the glass substrate, including at least one first through hole; and a first buffer layer disposed on the inner wall of the first through hole.

[0012] One embodiment of this application provides a fixture for fabricating a packaging carrier plate, the fixture comprising: a substrate; at least one columnar structure disposed on one side of the substrate to form a first gap for filling a buffer material after being inserted into a first through hole in a glass substrate; the height of the columnar structure is greater than or equal to the thickness of the glass substrate.

[0013] In some embodiments, the columnar structure is detachably connected to the substrate.

[0014] In some embodiments, the surface of the substrate connected to the columnar structure and / or the surface of the columnar structure is covered with a release layer; the thickness of the release layer ranges from 5 nm to 50 nm; and the water contact angle of the release layer is greater than or equal to 100 degrees.

[0015] One embodiment of this application provides a method for fabricating a packaging substrate, which, compared with the prior art, has the following advantages: A columnar structure with a diameter smaller than that of a first through-hole on a glass substrate is inserted into the first through-hole, creating a first gap between the columnar structure and the glass substrate. A buffer material is then filled into the first gap to form a first buffer layer. Finally, the fixture is removed. This method utilizes the fixture for physical positioning, achieving precise control of the thickness of the first buffer layer and uniform film formation within the high aspect ratio through-hole. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A flowchart illustrating a method for manufacturing a packaging carrier board according to one embodiment of this application; Figure 2 A process diagram illustrating the fabrication steps of a packaging carrier board according to one embodiment of this application; Figure 3 A schematic diagram of the structure of a glass substrate provided for one embodiment of this application; Figure 4 A schematic diagram of the structure of a fixture provided for one embodiment of this application; Figure 5 A process diagram illustrating the fabrication steps of a packaging carrier board according to one embodiment of this application; Figure 6 A schematic diagram of the structure of a packaging carrier provided for one embodiment of this application; Figure 7 A schematic diagram of the structure of a packaging carrier provided for one embodiment of this application; Figure 8 This is a schematic diagram of the structure of a fixture provided for one embodiment of this application.

[0018] Marker explanation: 100. Encapsulation carrier; 110. Glass substrate; 111. First through-hole; 112. Second through-hole; 113. First gap; 114. Second gap; 120. First buffer layer; 130. Second buffer layer; 140. Third buffer layer; 150. Conductive structure; 200, jig; 210, base; 220, columnar structure; 230, release layer. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0020] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0021] With the rapid development of fifth-generation and sixth-generation communication technologies, artificial intelligence, and high-performance computing, the demand for high-bandwidth, high-computing-power chips continues to grow, driving packaging substrates towards larger sizes, finer lines, higher integration, and lower losses. Glass substrates, due to their thermal expansion coefficient closely matching that of semiconductor chips, high surface flatness, low warpage, excellent high-temperature resistance, support for panel-level processing, and extremely low dielectric loss, have become an important research direction in advanced packaging and are considered the core carrier for next-generation glass through-hole packaging.

[0022] In glass through-hole technology, a buffer layer is typically prepared on the sidewall of the through-hole to alleviate thermal stress caused by the difference in thermal expansion coefficients between the glass and the metal conductor, and to avoid reliability issues such as interface delamination and orifice cracking. However, in glass through-holes with high aspect ratios, it is difficult to form a continuous and uniform buffer layer on the sidewall of the through-hole using traditional methods.

[0023] Please see Figure 1 and Figure 2 To address the aforementioned problems, one embodiment of this application provides a method for manufacturing a packaging carrier 100, which may include the following steps: Please see Figure 3 Step S10: Provide a glass substrate 110; the glass substrate 110 includes at least one first through hole 111; the first through hole 111 penetrates the glass substrate 110 along a first direction; the first through hole 111 has a first diameter; the first direction is the thickness direction of the glass substrate 110.

[0024] In this embodiment, a glass substrate 110 is provided as a prerequisite for fabricating the encapsulation carrier 100. The glass substrate 110 can be a flat structure made of glass material and serves as the main substrate of the encapsulation carrier 100. The glass substrate 110 can be made of various materials. For example, it can be made of quartz glass, soda-lime glass, borosilicate glass, or aluminosilicate glass. To meet the large-size manufacturing requirements of panel-level encapsulation, the glass substrate 110 can support large-size processing specifications. For example, the size of the glass substrate 110 can be 510mm × 515mm. The thickness of the glass substrate 110 is set while ensuring the mechanical strength and electrical performance of the encapsulation carrier 100. Specifically, the thickness of the glass substrate 110 can range from 100μm to 400μm. For example, the thickness of the glass substrate 110 can be 100μm, 120μm, 150μm, 180μm, 200μm, 250μm, 280μm, 300μm, 320μm, 350μm, 390μm or 400μm.

[0025] The glass substrate 110 may include one, multiple, or an array of multiple through-holes. A first through-hole 111 may be a hole-like structure penetrating the glass substrate 110, used to form a vertical electrical interconnection channel. The first through-hole 111 can be formed using various processes. Specifically, the formation method may be laser-induced deep etching, plasma etching, wet etching, or mechanical drilling, among which laser-induced deep etching is suitable for high aspect ratio hole processing due to its high processing precision, small heat-affected zone, and suitability.

[0026] The first via 111 can extend in the same direction as the first direction (Y direction). The first direction is defined as the thickness direction of the glass substrate 110, that is, the direction perpendicular to one main surface of the glass substrate 110 and pointing to another main surface. Through-hole can be a complete penetration, with the first via 111 extending from one main surface of the glass substrate 110 to another main surface along this direction, forming a channel with openings at both ends, providing a path for subsequent vertical interconnection.

[0027] The first diameter can be the minimum dimension of the first through-hole 111 in a cross-section perpendicular to its axial direction. Specifically, for a first through-hole 111 with a circular cross-section, the first diameter is the aperture of the circular hole. The cross-sectional shape of the first through-hole 111 can be various. For example, the cross-sectional shape can be circular, elliptical, or polygonal, among which the circular cross-sectional shape of the first through-hole 111 is more commonly used due to its mature technology and uniform stress distribution. The size of the first diameter can be set according to the wiring density and filling process capability of the packaging substrate 100. Specifically, the value of the first diameter can range from 30μm to 200μm. For example, the value of the first diameter can be 30μm, 40μm, 50μm, 60μm, 70μm, 100μm, 140μm, 150μm, 180μm, or 200μm, etc. The depth-to-diameter ratio of the first via 111, i.e., the ratio of the thickness of the glass substrate 110 to its first diameter, ranges from 3:1 to 15:1 to accommodate the interconnect depth requirements of different application scenarios. For example, the depth-to-diameter ratio of the first via 111 can be 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, 11:1, 12:1, 13:1, 14:1, or 15:1.

[0028] In some embodiments, to provide a good interface condition and avoid decreased adhesion of the buffer layer, interface delamination, or process defects caused by contaminants or moisture residue, the glass substrate 110 is cleaned. Specifically, the glass substrate 110 can be ultrasonically cleaned with deionized water for 5 to 15 minutes. The deionized water can be high-purity water that has undergone ion removal treatment to remove particulate contaminants and organic residues from the surface of the glass substrate 110. Ultrasonic cleaning can be a process that utilizes the cavitation effect generated by ultrasound in a liquid to achieve efficient cleaning of the substrate surface. After ultrasonic cleaning, the glass substrate 110 is dried with nitrogen gas. The nitrogen gas can be high-purity nitrogen gas to quickly blow away residual moisture on the surface of the glass substrate 110, avoiding water stains. Subsequently, the glass substrate 110 is placed at a temperature of 120 degrees Celsius for dehydration treatment for 10 to 30 minutes. The dehydration treatment can be carried out by heating to remove water molecules adsorbed on the surface of the glass substrate 110 and inside the through-holes, so as to avoid residual moisture from adversely affecting subsequent processes.

[0029] Please see Figure 4 Step S20: Provide a fixture 200; the fixture 200 includes a substrate 210 and a columnar structure 220 formed on one side of the substrate 210; the columnar structure 220 has a second diameter; the second diameter is smaller than the first diameter; the height of the columnar structure 220 is greater than or equal to the thickness of the glass substrate 110.

[0030] In this embodiment, a jig 200 is provided to prepare for the subsequent fabrication of the first buffer layer 120. The jig 200 may include a substrate 210 and a columnar structure 220 formed on one side of the substrate 210. The second diameter of the columnar structure 220 is smaller than the first diameter of the first through-hole 111, and the height of the columnar structure 220 is greater than or equal to the depth of the first through-hole 111. The jig 200 may be a tool for assisting in forming, having microstructures corresponding to the first through-hole 111 on the glass substrate 110, used to physically define the forming space of the first buffer layer 120 in subsequent processes.

[0031] The substrate 210 can be the main support part of the fixture 200, and can be a plate-like structure. Its material needs to have a thermal expansion coefficient similar to that of the glass substrate 110 to reduce thermal mismatch during the process. For example, the material of the substrate 210 can be silicon, silicon carbide, quartz, or Invar alloy. The thermal expansion coefficient of the substrate 210 is less than 5 ppm / K. For example, the thermal expansion coefficient of the substrate 210 can be 4.9 ppm / K, 4.5 ppm / K, 4.4 ppm / K, 4 ppm / K, 3.5 ppm / K, or 3 ppm / K. One side surface of the substrate 210 is used to support the columnar structure 220. The columnar structure 220 can be integrally formed or assembled separately on the substrate 210. For example, the columnar structure 220 can be directly processed on the substrate 210 by photolithography and etching processes, or a pre-fabricated columnar structure 220 can be fixed on the substrate 210 by micro-assembly.

[0032] The columnar structure 220 can be a protrusion disposed on one side of the base 210, the shape of which is adapted to the first through hole 111 to occupy part of the space after insertion into the first through hole 111. The cross-sectional shape of the columnar structure 220 can match the cross-sectional shape of the first through hole 111. For example, both the columnar structure 220 and the first through hole 111 have circular cross-sectional shapes to ensure that a uniform annular gap is formed after insertion. The number of columnar structures 220 corresponds to the number of first through holes 111, and can be a single or multiple columnar structures 220 arranged in an array.

[0033] The second diameter can be the maximum dimension of the columnar structure 220 in a cross-section perpendicular to its axis. For a columnar structure 220 with a circular cross-section, the second diameter is the diameter of the cylinder. The machining accuracy of the second diameter directly affects the thickness control of the subsequent first buffer layer 120, therefore, it needs to be fabricated using high-precision micromachining processes. For example, deep reactive ion etching or precision machining can be used, and its dimensional accuracy can be controlled at the sub-micron level.

[0034] The second diameter is smaller than the first diameter, and the difference between the two diameters defines the subsequently formed filling space. Specifically, the difference between the second and first diameters determines the width of the first gap 113, and thus the thickness of the first buffer layer 120. For example, if the target thickness of the first buffer layer 120 is t, the second diameter can be set to the first diameter minus 2t. By controlling the difference between the second and first diameters, precise control of the buffer layer thickness can be achieved, eliminating dependence on process parameters such as solution concentration and coating time.

[0035] The height of the columnar structure 220 can be its extension dimension in the direction perpendicular to the substrate 210. The height of the columnar structure 220 is not less than the thickness of the glass substrate 110, ensuring that when the columnar structure 220 is fully inserted into the first through hole 111, it can penetrate the entire depth of the first through hole 111 and can also be slightly higher than the surface of the glass substrate 110 on the side away from the substrate 210. This ensures that there is a uniform first gap 113 along the entire depth direction of the first through hole 111, from the end near the substrate 210 to the end away from the substrate 210, thereby ensuring that the subsequently formed first buffer layer 120 can completely and continuously cover the inner wall of the entire first through hole 111, avoiding areas where the buffer layer is missing at the opening of the first through hole 111.

[0036] Step S30: Insert the columnar structure 220 of the fixture 200 into the first through hole 111, so that there is a first gap 113 between the columnar structure 220 and the glass substrate 110.

[0037] In this embodiment, by precisely inserting the columnar structure 220 of the jig 200 into the first through hole 111 of the glass substrate 110, and taking advantage of the dimensional relationship that the second diameter of the columnar structure 220 is smaller than the first diameter of the first through hole 111, a precise and regular annular space—that is, the first gap 113—is constructed between the inner wall of the first through hole 111 and the side wall of the columnar structure 220.

[0038] Insertion can be the action of placing the columnar structure 220 of the fixture 200 into the first through-hole 111 of the glass substrate 110 along a first direction, so that the columnar structure 220 and the first through-hole 111 form a nested fit. This insertion operation needs to be performed under a precision alignment system to ensure that each columnar structure 220 can accurately enter the corresponding first through-hole 111. For example, an optical alignment system can be used to control the alignment accuracy within -2μm to 2μm to avoid collision or misalignment between the columnar structure 220 and the first through-hole 111, which could cause damage. The insertion speed needs to be slow and controllable. For example, the insertion speed can be set to 20μm / s to 100μm / s to reduce friction and impact that may occur during the insertion process and protect the integrity of the columnar structure 220 and the glass substrate 110.

[0039] The first gap 113 can be the space formed between the side wall of the columnar structure 220 and the inner wall of the first through hole 111 after the columnar structure 220 is inserted into the first through hole 111. The formation of the first gap 113 is determined by the dimensional relationship that the second diameter is smaller than the first diameter. Specifically, the geometry of the first gap 113 is an annular cavity surrounding the columnar structure 220, and its extension along the first direction covers the entire area where the columnar structure 220 and the first through hole 111 overlap. The width of the first gap 113 is determined by the difference between the first diameter and the second diameter, that is, the width of the first gap 113 is equal to the first diameter minus the second diameter divided by two. This width dimension is the thickness of the subsequently formed first buffer layer 120. For example, if the first diameter is 50 μm and the second diameter is 49.6 μm, then the width of the first gap 113 is 0.2 μm, and the thickness of the subsequently formed first buffer layer 120 is also 0.2 μm. By precisely controlling the difference between the first diameter and the second diameter, nanometer-level precision control of the thickness of the first buffer layer 120 can be achieved.

[0040] In some embodiments, after the columnar structure 220 of the fixture 200 is inserted into the first through hole 111, the fixture 200 and the glass substrate 110 need to be temporarily fixed to ensure that their relative positions remain unchanged during the subsequent filling of the buffer material, thereby ensuring the dimensional stability of the first gap 113. Various methods can be used for temporary fixing. For example, a vacuum adsorption groove can be provided on the back of the substrate 210 of the fixture 200, and the glass substrate 110 can be adsorbed and fixed by applying a negative pressure of -60kPa to -90kPa; or, ultraviolet-removable adhesive can be applied to the edges of the fixture 200 and the glass substrate 110, and the adhesive layer can be cured by exposure to 365nm ultraviolet light for 10 to 30 seconds to achieve temporary bonding; mechanical clamping or low-melting-point wax cooling and curing can also be used for fixing.

[0041] Step S40: Place the buffer material in the first gap 113 to form a first buffer layer 120 at least on the inner wall of the first through hole 111.

[0042] In this embodiment, by placing the buffer material in the first gap 113 defined by the diameter difference between the columnar structure 220 and the first through hole 111, a first buffer layer 120 with controllable thickness and good shape preservation is formed on the inner wall of the first through hole 111.

[0043] The buffer material can be a substance that forms a buffer layer. Its fabrication can provide mechanical stress buffering between the glass substrate 110 and the filled metallic conductive structure 150 to alleviate thermal stress caused by the difference in their coefficients of thermal expansion, thus avoiding reliability issues such as interface delamination and orifice cracking. The selection of the buffer material needs to consider factors such as its Young's modulus, thermal stability, adhesion to the glass substrate 110, and process compatibility. For example, the buffer material can be an organic polymer material with a low Young's modulus, enabling it to effectively absorb and disperse thermal stress.

[0044] The arrangement can be an operation in which cushioning material is introduced and filled into the first gap 113. This arrangement must ensure that the cushioning material can fully enter the tiny first gap 113 and uniformly cover the inner wall of the first through hole 111. Since the width of the first gap 113 can be as small as submicron and the first through hole 111 has a high aspect ratio, the arrangement of the cushioning material must have good filling capacity to avoid defects such as voids, insufficient adhesive, or uneven thickness.

[0045] After the buffer material is filled, a continuous thin film layer, namely the first buffer layer 120, is formed on the inner wall surface of the first through hole 111. The first buffer layer 120 can be conformally attached to the inner wall of the first through hole 111, and its thickness is precisely determined by the width of the first gap 113. Since the width of the first gap 113 is preset by the difference between the first diameter and the second diameter, the thickness of the first buffer layer 120 can be precisely controlled during the design stage by selecting the second diameter of the columnar structure 220 of the fixture 200, achieving thickness adjustment in the range of 100nm to 5μm, and improving the uniformity of the first buffer layer 120.

[0046] The formation of the first buffer layer 120 not only covers the inner wall of the first through-hole 111, but may also form additional buffer layers in other areas of the glass substrate 110 depending on the process method. For example, when the amount of buffer material supplied is greater than the amount required to fill the first gap 113, the excess material will cover the surface of the glass substrate 110 away from the fixture 200, forming an additional cover layer. This cover layer can be retained as a protective layer or stress buffer layer in subsequent processes, or it can be removed as needed by means of plasma etching or other methods.

[0047] Step S50: Remove at least a portion of the fixture 200 from the glass substrate 110.

[0048] In this embodiment, by removing at least a portion of the jig 200, the space occupied by the columnar structure 220 is released, thereby forming a through channel within the already formed first buffer layer 120 that can be used for subsequent interconnection, or the remaining portion of the jig 200 is directly converted into a functional structure of the packaging carrier 100. This step realizes the removal or conversion of the physical placeholder tool, providing a regular channel for the subsequent formation of vertical interconnection or directly forming the conductive structure 150.

[0049] Removal can be an operation that separates the jig 200 or its components from the glass substrate 110 to expose or form the structure required for the encapsulation carrier 100. This removal operation must be performed after the cushioning material has solidified and the first cushioning layer 120 has been stably formed to avoid damage to the formed first cushioning layer 120. The object to be removed can be the entire jig 200 or a portion of the jig 200.

[0050] Specifically, before performing the removal operation, the temporary fixation established in step three must be released. For example, if vacuum adsorption fixation was used previously, the vacuum source must be turned off and the negative pressure released; if UV-removable adhesive fixation was used, the adhesive layer's stickiness can be reduced through secondary exposure, or a special adhesive remover can be used; if mechanical clamps or low-melting-point wax fixation was used, the clamps must be loosened or the wax layer must be melted by heating.

[0051] After releasing the fixation, the specific removal operation is performed. The removal method can vary depending on the design of the fixture 200 and the object to be removed. For example, a mechanical extraction method can be used to smoothly pull the columnar structure 220 of the fixture 200 out of the first buffer layer 120 at a speed of 50 μm / s to 200 μm / s, so that the columnar structure 220 is detached from the first through hole 111. The extraction speed needs to be properly controlled; too fast may damage or detach the first buffer layer 120, while too slow will affect production efficiency. During the extraction process, the demolding force can be monitored in real time to ensure that it is less than 0.5 N / cm², so as to avoid excessive stress on the glass substrate 110 or the buffer layer.

[0052] After the removal operation is completed, the space originally occupied by the columnar structure 220 is released. If the entire fixture 200 is removed, a through cavity, namely the second through-hole 112, is formed in the space enclosed by the first buffer layer 120. The second through-hole 112 is used for subsequent filling with conductive material to form a vertical interconnect structure. If only part of the fixture 200 is removed, for example, the substrate 210 is removed while the columnar structure 220 is retained, the columnar structure 220 can be directly used as the permanent conductive structure 150 in the packaging carrier 100, eliminating the need for subsequent metallization filling processes.

[0053] After removal, the glass substrate 110 can be inspected or post-processed. For example, a scanning electron microscope can be used to observe the coverage and integrity of the first buffer layer 120 to ensure it is free of cracks, peeling, and residue. If a small amount of scum is present at the orifice, it can be cleaned using oxygen plasma or argon plasma at a power of 50 watts to 200 watts for a processing time of 10 to 120 seconds. Annealing can also be performed, maintaining a temperature of 100 to 150 degrees Celsius for 10 to 60 minutes to release the internal stress of the buffer layer and improve its stability.

[0054] In this embodiment, a first gap 113 is formed by inserting the columnar structure 220 in the jig 200 into the first through hole 111, and a buffer material is placed in the first gap 113 to form a first buffer layer 120. Then, at least a portion of the jig 200 is removed. Precise control of the thickness of the buffer layer is achieved through physical placement, thereby improving the uniformity of the first buffer layer 120.

[0055] Please see Figure 5 In some embodiments, the step of inserting the columnar structure 220 of the fixture 200 into the first through hole 111 to create a first gap 113 between the columnar structure 220 and the glass substrate 110 includes: setting a second gap 114 between the substrate 210 and the glass substrate 110; and disposing a buffer material in the first gap 113 to form a first buffer layer 120 at least on the inner wall of the first through hole 111. The step further includes: disposing a second buffer layer 130 in the second gap 114; and disposing a third buffer layer 140 on the side of the glass substrate 110 away from the substrate 210.

[0056] In this embodiment, a second gap 114 is provided between the substrate 210 and the glass substrate 110 when the columnar structure 220 is inserted into the first through hole 111, and a second buffer layer 130 is formed in the second gap 114 using the same buffer material filling process, and a third buffer layer 140 is formed on the side of the glass substrate 110 away from the substrate 210, thereby realizing the one-time integrated molding of the multi-layer buffer structure.

[0057] The first buffer layer 120 is used to alleviate thermal stress between the glass substrate 110 and the subsequent conductive structure 150. The second buffer layer 130 and the third buffer layer 140 can be used as buffer layers or protective layers for the substrate 210, which can be used as subsequent redistribution layers. The three buffer layers work together to provide more comprehensive and reliable stress buffering and protection for the encapsulation carrier 100.

[0058] Specifically, when inserting the columnar structure 220 of the fixture 200 into the first through hole 111, it is necessary not only to form a first gap 113 between the columnar structure 220 and the inner wall of the first through hole 111, but also to set a second gap 114 between the substrate 210 and the glass substrate 110. The height of the columnar structure 220 is greater than the thickness of the glass substrate 110.

[0059] The second gap 114 can be a space between the surface of the substrate 210 of the fixture 200 facing the glass substrate 110 and the surface of the glass substrate 110 facing the substrate 210. This second gap 114 can be achieved by creating a raised structure on the surface of the substrate 210 or the glass substrate 110, placing a spacer between them, or controlling the insertion depth. For example, support bumps with a height of 10μm to 50μm can be provided in the edge region of the substrate 210. When the columnar structure 220 is fully inserted into the first through hole 111, the support bumps maintain a preset distance between the substrate 210 and the glass substrate 110, thereby forming the second gap 114. The width of the second gap 114 can be designed according to the thickness of the second buffer layer 130 to be formed subsequently. For example, the thickness of the second buffer layer 130 can range from 100nm to 5μm.

[0060] The second buffer layer 130 can be a layered structure formed by buffer material filling the second gap 114. When the buffer material is applied by hot pressing or vacuum lamination, the material flows into and fills the second gap 114 while filling the first gap 113. After filling, it solidifies to form a second buffer layer 130 covering the side surface of the substrate 210 facing the glass substrate 110 and / or the side surface of the glass substrate 110 facing the substrate 210. This second buffer layer 130 can provide stress buffering between the substrate 210 and the glass substrate 110, reducing the thermal stress transmission caused by the difference in their coefficients of thermal expansion, and can also serve as a demolding aid layer when the substrate 210 is subsequently removed.

[0061] The third buffer layer 140 may be a buffer material cover layer formed on the surface of the glass substrate 110 away from the substrate 210. When the buffer material is disposed on the side of the glass substrate 110 away from the substrate 210, the excess buffer material, apart from the amount required to fill the first gap 113 and the second gap 114, will cover the surface of that side of the glass substrate 110, forming the third buffer layer 140. The third buffer layer 140 may cover the entire surface of the glass substrate 110 or only a local area.

[0062] By simultaneously forming the first buffer layer 120, the second buffer layer 130, and the third buffer layer 140 in the same process step, a multi-layer buffer structure is formed in one step. This integrated molding method simplifies the process flow, improves production efficiency, and ensures good bonding between the buffer layers and between the buffer layers and the glass substrate 110.

[0063] Please see Figure 6 In some embodiments, the step of removing at least a portion of the fixture 200 from the glass substrate 110 includes removing the columnar structure 220 from the first buffer layer 120, the first buffer layer 120 forming the second through-hole 112.

[0064] In this embodiment, by removing the columnar structure 220 from the formed first buffer layer 120, the space originally occupied by the columnar structure 220 is transformed into a second through hole 112 enclosed by the inner wall of the first buffer layer 120. This provides a regular-shaped, smooth-sidewalled vertical interconnection channel for subsequent filling of conductive material, while ensuring the integrity and shape retention of the first buffer layer 120 and avoiding damage to the buffer layer due to the removal operation.

[0065] The second through-hole 112 can be a through-channel formed by the inner wall of the first buffer layer 120. Specifically, the first buffer layer 120 conformally covers the inner wall of the first through-hole 111, and its inner surface is the surface that originally contacted the outer surface of the columnar structure 220. When the columnar structure 220 is removed, the cavity enclosed by the inner wall of the first buffer layer 120 is the second through-hole 112. The cross-sectional shape of the second through-hole 112 matches the cross-sectional shape of the columnar structure 220. For example, the second through-hole 112 is circular, and its diameter is determined by the second diameter of the columnar structure 220. The second through-hole 112 penetrates the entire glass substrate 110 along the first direction, forming a vertical channel with openings at both ends, for subsequent filling with conductive material to achieve vertical interconnection.

[0066] Since the thickness of the first buffer layer 120 is precisely controlled by the width of the first gap 113 and has good uniformity along the depth direction of the first through hole 111, the formed second through hole 112 has a regular geometric shape and a smooth inner wall, which provides ideal interface conditions for subsequent filling of conductive materials, which is beneficial to improving filling quality and interconnection reliability.

[0067] In some embodiments, after the columnar structure 220 is removed, a scanning electron microscope can be used to observe the coverage of the first buffer layer 120 and the morphology of the second through hole 112 to ensure that there are no cracks, no residues, and no damage.

[0068] In some embodiments, after the columnar structure 220 is removed from the first buffer layer 120, a conductive structure 150 can be provided in the second through-hole 112. The conductive structure 150 can be a conductive material filling the second through-hole 112 to form a vertical interconnect channel penetrating the glass substrate 110. The material of the conductive structure 150 can be a metal with good conductivity, such as copper, tungsten, nickel, gold, silver, or alloys thereof. The conductive structure 150 can be provided by electroplating, chemical plating, conductive paste filling, or molten metal infusion. For example, a seed layer can be prepared first by physical vapor deposition on the inner wall of the second through-hole 112 and the surface of the glass substrate 110, and then copper can be filled into the second through-hole 112 by electroplating to form a copper conductive column.

[0069] Since the second through-hole 112 is formed by the inner wall of the first buffer layer 120, it has a regular geometric shape and a smooth surface, providing good interface conditions for the filling of the conductive structure 150, which is conducive to achieving void-free and highly reliable filling. The formed conductive structure 150 is closely attached to the first buffer layer 120. The first buffer layer 120 plays a stress buffering role between the glass substrate 110 and the conductive structure 150, effectively alleviating the thermal stress caused by the difference in the thermal expansion coefficients of the two, avoiding interface delamination and cracking, and improving the long-term reliability of the encapsulation carrier 100.

[0070] In some embodiments, after the conductive structure 150 is provided in the first via 111, a redistribution layer can be provided on at least one side along the thickness direction of the glass substrate 110. The redistribution layer can be a metal wiring layer used to lead out the ends of the conductive structure 150 and rearrange the wiring, achieving electrical interconnection between the packaging carrier 100 and the outside. The redistribution layer can be provided separately on one side of the glass substrate 110 or simultaneously on opposite sides, forming a double-sided redistribution structure. The redistribution layer can include a dielectric layer and a conductive layer, with at least a portion of the conductive layer embedded in the dielectric. This conductive layer is electrically connected to the conductive structure 150, which facilitates fine-width, high-precision wiring layout and meets the high-density interconnection requirements of high-performance packaging.

[0071] Please see Figure 7 In some embodiments, the columnar structure 220 is detachably connected to the substrate 210; the columnar structure 220 is made of a conductive material, and the step of removing at least part of the fixture 200 from the glass substrate 110 includes: separating the substrate 210 from the columnar structure 220, and retaining the columnar structure 220 in the encapsulation carrier 100 as a conductive structure 150 penetrating the glass substrate 110.

[0072] In this embodiment, the substrate 210 is separated from the columnar structure 220, which is retained in the encapsulation carrier 100 as a conductive structure 150.

[0073] The detachable connection can be a non-permanent fixation between the columnar structure 220 and the base 210, allowing them to be separated when needed without causing structural damage. There are various ways to achieve this detachable connection. For example, it can employ micro-clamp connections, threaded connections, slot connections, magnetic adsorption, or electrostatic adsorption. For instance, a micro-socket corresponding to each columnar structure 220 can be provided on the base 210, and a snap-fit ​​structure adapted to the socket can be provided at the bottom of the columnar structure 220. The columnar structure 220 is fixed to the base 210 by mechanical pressing, and can be separated from the base 210 when a certain separation force is applied or when unlocked with a specific tool. Alternatively, a micro-threaded structure can be used to screw the columnar structure 220 into the corresponding threaded hole on the base 210 to achieve the connection. This detachable connection method allows the columnar structure 220 to be replaced individually or selectively retained, improving the flexibility and ease of maintenance of the fixture 200.

[0074] The conductive material can be any material with good electrical conductivity, capable of being used as a conductor for electrical interconnection. Specifically, the conductive material can include copper, tungsten, nickel, gold, silver, aluminum or their alloys, as well as conductive composite materials. For example, copper, as the conductive material for the columnar structure 220, is a commonly used interconnect material in the semiconductor packaging field due to its excellent electrical and thermal conductivity and relatively low cost. The conductive material of the columnar structure 220 can be prepared by electroforming, precision machining, micro-electrical discharge machining, etc., ensuring that it has precise dimensions and a smooth surface.

[0075] After the buffer material has solidified and the first buffer layer 120 has been stably formed on the inner wall of the first through hole 111, a removal operation is performed. This removal operation removes only the substrate 210, leaving the columnar structure 220 in the glass substrate 110.

[0076] Specifically, before performing the separation operation, the previously established temporary fixation must be released. For example, the vacuum adsorption can be turned off or the UV adhesive can be removed. Then, the separation operation between the substrate 210 and the columnar structure 220 is performed. The separation method depends on the specific implementation of the detachable connection. For example, if a snap-fit ​​connection is used, the snap-fit ​​can be disengaged by applying a horizontal shearing force or by pressing the snap-fit ​​unlocking mechanism with a special tool, thereby separating the substrate 210 from the columnar structure 220. If a threaded connection is used, the columnar structure 220 can be unscrewed from the substrate 210 by rotating in the opposite direction. During the separation process, the magnitude and direction of the force must be controlled to avoid damage to the first buffer layer 120 or the glass substrate 110.

[0077] After the substrate 210 is removed, the columnar structure 220 remains in the encapsulation carrier 100, still positioned within the space enclosed by the first buffer layer 120. At this point, the columnar structure 220 directly serves as a conductive structure 150 penetrating the glass substrate 110, realizing the transformation from a temporary placeholder to a permanent functional component. The conductive structure 150 penetrating the glass substrate 110 can be a conductor extending along a first direction, penetrating the entire thickness of the glass substrate 110, used to achieve vertical electrical interconnection. The outer wall of this conductive structure 150 is tightly fitted to the inner wall of the first buffer layer 120, which acts as a stress buffer between the glass substrate 110 and the conductive structure 150.

[0078] In this embodiment, by setting the columnar structure 220 to be detachably connected to the substrate 210 and using a conductive material, only the substrate 210 is separated while the columnar structure 220 is retained in the encapsulation carrier 100, making it directly transformed into a conductive structure 150 that penetrates the glass substrate 110. This completely eliminates the seed layer preparation and electroplating filling processes in the traditional physical vapor deposition process, solves the problem of filling high aspect ratio through holes, simplifies the production process, reduces manufacturing costs, and at the same time ensures the precise fit and reliable bonding between the conductive structure 150 and the first buffer layer 120.

[0079] In some embodiments, the buffer material is a solid film-forming material. The step of placing the buffer material in the first gap 113 and forming a first buffer layer 120 at least on the inner wall of the first through hole 111 includes: melting or softening the solid film-forming material by hot pressing or vacuum pressing and filling it into the first gap 113, and solidifying it to form the first buffer layer 120.

[0080] In this embodiment, the buffer material can be a solid film-forming material. The fabrication of the first buffer layer 120 may also include melting or softening the solid film-forming material through hot pressing or vacuum pressing processes to allow it to flow into the first gap 113 and solidify to form the first buffer layer 120.

[0081] Solid film-forming materials can be materials that are solid at room temperature and can flow and form thin films under certain temperature and pressure conditions. Compared with liquid materials, solid film-forming materials have the characteristics of being solvent-free or containing only a small amount of solvent. Therefore, during the filling process, defects such as bubbles, shrinkage, or pinholes will not occur due to solvent evaporation, making them particularly suitable for filling high aspect ratio microstructures. Solid film-forming materials can be in the form of single-layer films, multi-layer composite films, or rolls. Before filling, the solid film-forming material can be pre-cut into a shape that adapts to the dimensions of the glass substrate 110. For example, the side length of the solid film-forming material is 10 mm to 20 mm larger than each side of the glass substrate 110 to ensure complete coverage.

[0082] Hot-press lamination is a process that uses heat and pressure to laminate solid film-forming materials onto a substrate surface and allow them to flow into the microstructure. Vacuum lamination is a process that uses heat and pressure in a vacuum environment to shape and fill solid film-forming materials. Both processes can effectively drive the flow of solid film-forming materials, achieving full filling of the first gap 113.

[0083] Specifically, the process can be divided into a preheating stage, a main pressing stage, and a cooling stage. In the preheating stage, the upper and lower pressure plates are heated to 80°C to 120°C, and a slight pressure of 0.1MPa to 0.3MPa is applied and maintained for 10 to 60 seconds to soften the solid film-forming material and allow it to initially adhere to the surface of the glass substrate 110. In the main pressing stage, the temperature is raised to near or above the glass transition temperature of the solid film-forming material; for example, for polyimide materials, the temperature can be raised to 150°C to 250°C, while the pressure is increased to 0.3MPa to 1.0MPa and maintained for 30 to 300 seconds to fully melt or soften the material and allow it to flow into the first gap 113 under pressure. If a vacuum pressing process is used, the vacuum level can be controlled to less than 1 mbar in the main pressing stage to completely eliminate air and avoid bubble formation. In the cooling stage, the pressure is kept constant, and 25°C cooling water is introduced to cool the system to below 40°C, allowing the material to solidify and solidify.

[0084] Melting or softening can be the process by which a solid film-forming material transforms from a solid state to a fluid molten or elastic state under the influence of temperature and pressure. The fluidity of this material allows it to overcome the resistance of the microchannels and gradually fill the first gap 113, progressing from one opening to the other until it completely fills the entire gap 113. Since the width of the first gap 113 is precisely controlled by the difference between the first and second diameters and is uniform along the depth direction, the melted or softened material can form a continuous layer of uniform thickness within it. The flowing solid film-forming material completely occupies the entire space of the first gap 113, making close contact with the inner wall of the first through-hole 111 and the outer wall of the columnar structure 220. During the filling process, the flow behavior of the material is influenced by temperature, pressure, material viscosity, and the size of the first gap 113. By optimizing the process parameters, it can be ensured that the material does not solidify prematurely before reaching the bottom of the hole, thus achieving complete filling without voids.

[0085] The material filling the first gap 113 changes from a fluid state to a solid state after cooling, and is shaped into a first buffer layer 120 with a defined shape and size. The solidified first buffer layer 120 forms a firm bond with the inner wall of the first through hole 111, and its thickness is determined by the width of the first gap 113, while its uniformity along the depth direction is determined by the stability of the filling process.

[0086] In this embodiment, solid film-forming materials are used in conjunction with hot pressing or vacuum pressing processes to avoid capillary blockage of liquid materials in high aspect ratio holes, thus eliminating sealing and void defects.

[0087] In some embodiments, the solid film-forming material is an organic polymer dry film; the Young's modulus of the organic polymer dry film is less than or equal to 3 GPa.

[0088] In this embodiment, the solid film-forming material can be an organic polymer dry film. The organic polymer dry film can be a solid film material with organic polymers as the main component and containing little or no solvent. Organic polymer dry films possess good film-forming properties, flexibility, and thermal stability, and can soften and flow during hot pressing processes and solidify after cooling, making them suitable for use as buffer layer materials.

[0089] The specific type of organic polymer dry film can be selected based on requirements such as coefficient of thermal expansion, Young's modulus, glass transition temperature, dielectric properties, and adhesion to the glass substrate 110. For example, polyimide dry film, liquid crystal polyimide dry film, polytetrafluoroethylene raw material tape, perfluoroalkoxy resin dry film, polyolefin dry film, thermoplastic polyurethane dry film, or silicone dry film can be selected.

[0090] Polyimide dry film can be a dry film material with polyimide as the main component, and its glass transition temperature can be in the range of 180°C to 220°C. It has high heat resistance and mechanical strength. Liquid crystal polyimide dry film can be a polyimide material with a liquid crystal structure, and its Young's modulus is relatively low, ranging from 1.5 GPa to 2 GPa. Polytetrafluoroethylene (PTFE) raw tape can be an unsintered PTFE film material, with an extremely low coefficient of friction and Young's modulus, ranging from 0.4 GPa to 0.8 GPa. Perfluoroalkoxy resin dry film can be a dry film material made of perfluoroalkoxy resin, and its Young's modulus can be in the range of 0.6 GPa to 1.0 GPa. Polyolefin dry film can be a dry film made of polyolefin materials such as polyethylene and polypropylene, and its Young's modulus can be in the range of 0.1 GPa to 0.5 GPa. Thermoplastic polyurethane dry film refers to dry film made of thermoplastic polyurethane elastomer, with a Young's modulus ranging from 0.05 GPa to 0.3 GPa. Silicone dry film can be a dry film with organosilicon materials as the main component, with a Young's modulus ranging from 0.01 GPa to 0.1 GPa, and has excellent flexibility and stress buffering capacity.

[0091] Young's modulus is a physical quantity that describes the ability of a solid material to resist deformation. It is defined as the ratio of stress to strain within the elastic deformation range of the material. The smaller the Young's modulus, the softer the material is, and the easier it is to deform under external forces, thus more effectively absorbing and buffering thermal stress. The larger the Young's modulus, the stiffer the material is, and the relatively weaker its stress buffering ability.

[0092] By controlling the Young's modulus of the organic polymer dry film to be less than or equal to 3 GPa, sufficient flexibility can be ensured, enabling it to effectively buffer stress between the glass substrate 110 and the subsequently filled metal conductor. The coefficient of thermal expansion of the glass substrate 110 is approximately 3 ppm / K to 4 ppm / K, while that of metallic copper is approximately 17 ppm / K, a significant difference. During reflow soldering, thermal cycling, or operation of high-power devices, this mismatch in coefficient of thermal expansion can generate cyclic thermal stress at the interface. The organic polymer dry film with a Young's modulus less than or equal to 3 GPa, acting as a buffer layer, can absorb and disperse interfacial stress through its own deformation, reducing stress concentration and preventing problems such as delamination at the glass-metal interface, circumferential cracking at the via opening, and blistering of electroplated copper.

[0093] The buffer material can be an organic polymer dry film with its Young's modulus controlled to be less than or equal to 3 GPa, thereby ensuring that the formed second buffer layer 130 has sufficient flexibility and stress buffering capacity.

[0094] Please see Figure 6 One embodiment of this application provides a packaging carrier 100, which is prepared using the packaging carrier 100 manufacturing method as described in any of the above claims, comprising: a glass substrate 110 including at least one first through hole 111; and a first buffer layer 120 disposed on the inner wall of the first through hole 111.

[0095] In this embodiment, the encapsulation substrate can be prepared by the encapsulation carrier 100 manufacturing method described above. The glass substrate 110 may include at least one glass substrate 110 having a first through hole and a first buffer layer 120, which is disposed on the inner wall of the first through hole 111. The first buffer layer 120 may have a uniform thickness and good shape retention.

[0096] Please see Figure 4 One embodiment of this application provides a jig 200 for fabricating a packaging carrier 100. The jig 200 includes: a substrate 210; at least one columnar structure 220 disposed on one side of the substrate 210 to form a first gap 113 for filling a buffer material after being inserted into a first through hole 111 of a glass substrate 110; the height of the columnar structure 220 is greater than or equal to the thickness of the glass substrate 110.

[0097] In this embodiment, the fixture 200 may include a base 210 and a columnar structure 220 disposed on one side of the base 210 for fabricating the encapsulation carrier plate 100.

[0098] The substrate 210 can be the main support portion of the fixture 200, used to support the columnar structure 220 and provide overall structural stability and ease of operation during the process. The shape and size of the substrate 210 can be set according to the glass substrate 110 to be processed. For example, it can be made into a circular or rectangular plate structure. For panel-level glass substrate 110 processing, the substrate 210 can be designed as a rectangular plate adapted to the size of the glass substrate 110. For example, the size is 510mm × 515mm or slightly larger to ensure that the entire area of ​​the glass substrate 110 can be covered.

[0099] The coefficient of thermal expansion of the substrate 210 can be similar to that of the glass substrate 110 to reduce thermal mismatch and warping caused by temperature changes during the manufacturing process. For example, the substrate 210 can be made of materials such as monocrystalline silicon, silicon carbide, quartz, or Invar alloy, with a coefficient of thermal expansion preferably less than 5 ppm / K. One surface of the substrate 210 can be precision machined to ensure sufficient flatness and surface quality to facilitate the placement of the columnar structure 220 and its fit with the glass substrate 110.

[0100] The columnar structure 220 can be a protrusion disposed on one side of the substrate 210, used to occupy part of the space after insertion into the first through hole 111 of the glass substrate 110, thereby defining an annular gap for forming a buffer layer. The shape of the columnar structure 220 needs to be adapted to the shape of the first through hole 111 to ensure that a uniform gap is formed after insertion.

[0101] For example, if the first through-hole 111 is circular, the columnar structure 220 is preferably cylindrical; if the first through-hole 111 is rectangular, the columnar structure 220 is preferably rectangular. The number of columnar structures 220 corresponds to the number of first through-holes 111 on the glass substrate 110 to be processed, and can be single or multiple columnar structures 220 arranged in an array to meet the needs of different interconnect densities. The size of the columnar structure 220 is determined by the size of the first through-hole 111 into which it is inserted and the required thickness of the buffer layer. Specifically, the outer diameter of the columnar structure 220 (i.e., its maximum cross-sectional dimension) must be smaller than the inner diameter of the first through-hole 111, and the difference between the two is used to define the width of the first gap 113, thereby determining the thickness of the buffer layer. The manufacturing of the columnar structure 220 requires high-precision micromachining processes. For example, deep reactive ion etching, precision machining, electroforming, or micro-electrical discharge machining, etc., to ensure its dimensional accuracy and surface quality.

[0102] The height can be the extension dimension of the columnar structure 220 in the direction perpendicular to the substrate 210. Setting the height of the columnar structure 220 to be greater than or equal to the thickness of the glass substrate 110 ensures that when the columnar structure 220 is fully inserted into the first through hole 111, it can penetrate the entire depth of the first through hole 111, and even slightly exceed the surface of the glass substrate 110 on the side away from the substrate 210. This ensures that there is a uniform first gap 113 along the depth direction of the entire first through hole 111, from the end near the substrate 210 to the end away from the substrate 210. This ensures that the subsequently formed first buffer layer 120 can completely and continuously cover the inner wall of the entire first through hole 111, avoiding areas where the buffer layer is missing at the opening or bottom of the hole. For example, if the thickness of the glass substrate 110 is 300 μm, the height of the columnar structure 220 can be designed to be 310 μm to 320 μm to ensure that the top of the columnar structure 220 is slightly higher than the upper surface of the glass substrate 110 after insertion.

[0103] Since the structural design of the jig 200 directly determines the molding space and thickness of the first buffer layer 120, its precision requirements are high. Factors such as the dimensional accuracy, positional accuracy, and perpendicularity of the columnar structure 220 to the substrate 210 all affect the quality and uniformity of the final buffer layer. Therefore, during the manufacturing process of the jig 200, methods such as photolithographic alignment marks and precision machining references can be used to ensure that the relative positional accuracy between the columnar structure 220 and the substrate 210 is controlled within a certain range. The surface roughness of the columnar structure 220 also needs to be controlled within a certain range. For example, this surface roughness should be less than 0.1 μm to reduce friction with the buffer material and facilitate subsequent demolding.

[0104] The columnar structure 220 is aligned and inserted into the first through-hole 111 of the glass substrate 110, forming a first gap 113 between the columnar structure 220 and the inner wall of the first through-hole 111. Subsequently, a buffer material is filled into the first gap 113 by a hot-press lamination process or a vacuum lamination process, forming a first buffer layer 120 on the inner wall of the first through-hole 111. Finally, at least a portion of the fixture 200 is removed from the glass substrate 110, completing the preparation of the buffer layer.

[0105] The fixture 200, with its base 210 and at least one columnar structure 220 disposed on one side of the base 210, physically defines the forming space of the first buffer layer 120 within the first through-hole 111 of the glass substrate 110. As a key process equipment for fabricating the packaging carrier 100, the fixture 200 provides the hardware foundation for precise control of the thickness of the first buffer layer 120, uniform film formation within high aspect ratio through-holes, and mass production.

[0106] In some embodiments, the columnar structure 220 is detachably connected to the base 210.

[0107] In this embodiment, the columnar structure 220 can be detachably connected to the base 210. The detachable connection allows the columnar structure 220 and the base 210 to be joined in a non-permanent manner, enabling them to be separated when needed without structural damage, and to be reinstalled or replaced if necessary. This detachable connection enhances the flexibility and ease of maintenance of the fixture 200, providing various possibilities for different process requirements.

[0108] The method for achieving detachable connections can be selected based on factors such as process precision requirements, mechanical strength requirements, and ease of operation. For example, miniature snap-fit ​​connections, threaded connections, slot connections, magnetic adsorption, electrostatic adsorption, or vacuum adsorption can be used.

[0109] Specifically, the detachable connection can employ a miniature snap-fit ​​connection. This connection involves a snap-fit ​​structure at the bottom of the columnar structure 220, with a corresponding socket or slot on the base 210. During installation, the snap-fit ​​of the columnar structure 220 is aligned with the socket on the base 210, and pressure is applied to allow the snap-fit ​​to elastically deform and snap into the socket, thus securing the connection. When separation is required, a special tool can be used to press the unlocking mechanism of the snap-fit ​​or apply a certain pulling force to disengage the snap-fit ​​from the socket, achieving disassembly. The snap-fit ​​connection is characterized by its simple structure, quick installation, and reliable connection, making it suitable for scenarios requiring frequent replacement of the columnar structure 220.

[0110] The detachable connection between the base 210 and columnar structure 220 of fixture 200 offers several advantages. First, when the columnar structure 220 becomes worn, contaminated, or damaged due to long-term use, the damaged columnar structure 220 can be replaced individually without discarding the entire base 210 of fixture 200, significantly reducing the usage and maintenance costs of fixture 200. Second, by replacing columnar structures 220 with different diameters or shapes, the width of the first gap 113 can be flexibly adjusted to meet the fabrication requirements of buffer layers of varying thicknesses, expanding the applicability of fixture 200. Third, the detachable connection allows the columnar structure 220 to remain within the encapsulation carrier 100 as a permanent conductive structure 150, providing more possibilities for the process. Fourth, for mass production scenarios, various specifications of columnar structures 220 can be pre-prepared and quickly replaced according to product requirements, improving production efficiency and equipment utilization.

[0111] Please see Figure 8 In some embodiments, the surface of the substrate 210 connected to the columnar structure 220 and / or the surface of the columnar structure 220 are covered with a release layer 230; the thickness of the release layer 230 is in the range of 5nm to 50nm; and the water contact angle of the release layer 230 is greater than or equal to 100 degrees.

[0112] In this embodiment, the surface of the substrate 210 connected to the columnar structure 220 and / or the surface of the columnar structure 220 may be covered with a release layer 230 to facilitate the separation of the jig 200 from the encapsulation carrier 100.

[0113] The release layer 230 can be a thin film layer with low surface energy and low coefficient of friction covering the surface of the fixture 200. Its function is to reduce the adhesion between the buffer material and the fixture 200, so that the fixture 200 or its columnar structure 220 can be smoothly and without damage removed or separated from the glass substrate 110 or the formed first buffer layer 120 in subsequent steps. The release layer 230 can be positioned to cover only the surface of the columnar structure 220, or it can simultaneously cover the surface of the substrate 210 facing the glass substrate 110, or it can cover the entire outer surface of the fixture 200.

[0114] The coating may be a release layer 230, attached to at least a portion of the surface of the fixture 200 in the form of a continuous or discontinuous thin film, and may be formed by methods such as chemical adsorption, physical deposition, or spraying. The release layer 230 must have good adhesion to the substrate of the fixture 200 to ensure that it does not detach or fail during repeated use. The material of the release layer 230 must have low surface energy, good thermal stability, chemical inertness, and good adhesion to the substrate of the fixture 200.

[0115] For example, atomic layer deposition of perfluorooctyltrichlorosilane, a self-assembled monolayer material, can be used to form a dense hydrophobic film on the surface of the jig 200. Perfluorodecyltriethoxysilane, also a fluorosilane self-assembled monolayer material, can be used, exhibiting excellent hydrophobic and oleophobic properties. Diamond-like carbon, a carbon-based film material with high hardness, low coefficient of friction, and good chemical inertness, can also be used. Furthermore, perfluoroalkoxy resins or polytetrafluoroethylene coatings formed by spraying can be employed; these fluoropolymer materials possess extremely low surface energy and good release properties.

[0116] The thickness of the release layer 230 can range from 5nm to 50nm, ensuring that it fully performs its release function without significantly affecting the dimensional accuracy of the fixture 200. The thickness can be the dimension of the release layer 230 in the direction perpendicular to the surface of the fixture 200.

[0117] For example, the thickness of the release layer 230 can be 5nm, 8nm, 10nm, 12nm, 15nm, 20nm, 25nm, 28nm, 30nm, 32nm, 35nm, 40nm, 43nm, 45nm, 48nm or 50nm, etc.

[0118] When the thickness of the release layer 230 is less than 5 nm, the film is too thin and may be difficult to form a continuous and complete cover layer, resulting in insufficient release performance in local areas.

[0119] If the thickness of the release layer 230 is greater than 50nm, it may affect the dimensional accuracy of the fixture 200. In particular, for the high-precision columnar structure 220, an excessively thick release layer 230 will change its second diameter, thereby affecting the control accuracy of the width of the first gap 113 and the thickness of the buffer layer.

[0120] The water contact angle of the release layer 230 can be greater than or equal to 100 degrees, which ensures that the interface between the buffer material and the fixture 200 is easy to separate during the demolding process, avoiding problems such as damage to the buffer layer or difficulty in removing the fixture 200 due to excessive adhesion.

[0121] The water contact angle, which is the angle between the gas-liquid interface and the solid-liquid interface when a water droplet reaches equilibrium on a solid surface, is an important indicator of the hydrophobicity of a solid surface. A larger water contact angle indicates lower surface energy, stronger hydrophobicity, and weaker liquid spreading ability. For the release layer 230, a water contact angle greater than or equal to 100 degrees signifies excellent hydrophobicity and low surface energy, effectively reducing the adhesion between the cushioning material and the fixture 200, thus making the demolding process smoother.

[0122] When the water contact angle of the release layer 230 is less than 100 degrees, insufficient hydrophobicity of the release layer 230 will increase the adhesion between the buffer material and the surface of the fixture 200, increasing the demolding resistance and hindering the demolding process. Increased demolding resistance poses a risk of mechanical damage to the first buffer layer 120, potentially causing cracks, peeling, or detachment, thus compromising its integrity and stress-buffering function. For high aspect ratio through holes, poor demolding may cause the columnar structure 220 to become stuck or break, or the glass substrate 110 to crack, resulting in product scrap. Furthermore, buffer material may remain on the surface of the fixture 200, contaminating it, increasing cleaning difficulty and maintenance costs, and affecting the reusability of the fixture 200.

[0123] It should be noted that some embodiments of this application have been described above. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. In addition, the processes depicted in the drawings do not necessarily require the specific order or sequential order shown to achieve the desired result.

[0124] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; under the concept of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the above embodiments of this application, which are not provided in detail for the sake of brevity.

[0125] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A method for manufacturing a packaging carrier board, characterized in that, include: Provide glass substrates; The glass substrate includes at least one first through hole; The first through hole penetrates the glass substrate along a first direction; The first through hole has a first diameter; the first direction is the thickness direction of the glass substrate; A jig is provided; the jig includes a base and a columnar structure formed on one side of the base; the columnar structure has a second diameter; the second diameter is smaller than the first diameter; The height of the columnar structure is greater than or equal to the thickness of the glass substrate; The columnar structure of the fixture is inserted into the first through hole, so that there is a first gap between the columnar structure and the glass substrate; A buffer material is disposed in the first gap, forming a first buffer layer at least on the inner wall of the first through hole; At least a portion of the fixture is removed from the glass substrate.

2. The manufacturing method according to claim 1, characterized in that, The step of inserting the columnar structure of the fixture into the first through hole, so that there is a first gap between the columnar structure and the glass substrate, includes: A second gap is formed between the substrate and the glass substrate; The step of setting the buffer material in the first gap to form a first buffer layer at least on the inner wall of the first through hole further includes: setting a second buffer layer in the second gap, and setting a third buffer layer on the side of the glass substrate away from the substrate.

3. The manufacturing method according to claim 1, characterized in that, The step of removing at least a portion of the fixture from the glass substrate includes: The columnar structure is removed from the first buffer layer, forming a second through-hole in the first buffer layer.

4. The manufacturing method according to claim 1, characterized in that, The columnar structure is detachably connected to the substrate; the columnar structure is made of a conductive material; the step of removing at least a portion of the fixture from the glass substrate includes: The substrate is separated from the columnar structure, while the columnar structure is retained in the encapsulation carrier to serve as a conductive structure penetrating the glass substrate.

5. The manufacturing method according to claim 1, characterized in that, The buffer material is a solid film-forming material, and the step of disposing of the buffer material in the first gap to form a first buffer layer at least on the inner wall of the first through hole includes: The solid film-forming material is melted or softened by hot pressing or vacuum pressing and filled into the first gap, and then solidified to form the first buffer layer.

6. The manufacturing method according to claim 5, characterized in that, The solid film-forming material is an organic polymer dry film; the Young's modulus of the organic polymer dry film is less than or equal to 3 GPa.

7. A packaging carrier board, characterized in that, The substrate is prepared using the method for manufacturing the encapsulation carrier as described in any one of claims 1 to 6, comprising: The glass substrate includes at least one of the first through holes; The first buffer layer is disposed on the inner wall of the first through hole.

8. A fixture for fabricating a packaging carrier board, characterized in that, The fixtures include: Base; At least one columnar structure is disposed on one side of the substrate to form a first gap for filling a buffer material after being inserted into a first through hole in the glass substrate; the height of the columnar structure is greater than or equal to the thickness of the glass substrate.

9. The fixture according to claim 8, characterized in that, The columnar structure is detachably connected to the base.

10. The fixture according to claim 8, characterized in that, The surface of the substrate connected to the columnar structure and / or the surface of the columnar structure are covered with a release layer; the thickness of the release layer is in the range of 5nm to 50nm; the water contact angle of the release layer is greater than or equal to 100 degrees.

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