Method for producing a transparent heated glass and transparent heated glass
By using supersonic flame spraying of silver powder into transparent heating glass and combining it with high temperature and high pressure sintering, conductive circuits are encapsulated inside, solving the problem that conductive circuits are easily affected by external environmental interference, and achieving transparent heating glass with high reliability and long life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN SHENGBAILIN RUBBER PLASTIC ELECTRONICS CO LTD
- Filing Date
- 2026-04-20
- Publication Date
- 2026-07-03
AI Technical Summary
The conductive lines of existing transparent heating glass are exposed to the external environment and are susceptible to the effects of temperature, humidity, corrosive gases and mechanical friction, which can lead to problems such as changes in resistance, poor contact, short circuits or open circuits, and cannot meet the high reliability requirements of the semiconductor industry.
A silver powder conductive layer is prepared between glass layers using a supersonic flame spraying process, and an internal encapsulation structure is formed by sintering molten glass under high temperature and pressure. The conductive circuit is isolated from the external environment. The high temperature stability and transparency of quartz glass are utilized to ensure the stability and reliability of the conductive circuit.
Effective isolation of external environmental factors from the conductive circuit improves the service life and reliability of the transparent heating glass, ensuring stable current transmission and clear optical detection in high-temperature processing environments.
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Figure CN122069611B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of wafer process equipment, and in particular to a method for preparing transparent heating glass and the transparent heating glass itself. Background Technology
[0002] In the photoresist removal process of wafer fabrication, transparent heating glass plays a crucial role in RTP (Rapid Thermal Processing) technology. Specifically, after circuit etching, the residual photoresist on the wafer surface needs to be efficiently and thoroughly removed. At this point, the wafer is placed in a vacuum chamber, and the transparent heating glass acts as a physical isolation window for the chamber. In this configuration, the transparent heating glass maintains a distance of approximately 3-5 mm from the wafer surface and directly acts as a heat source, heating the wafer to a high temperature within seconds to tens of seconds, thereby causing the photoresist to rapidly decompose and detach.
[0003] Currently, the industry commonly uses indium tin oxide (ITO) thin film deposited on the glass surface as a conductive resistive layer to obtain transparent heating glass. However, this method exposes the conductive circuitry to the external environment, making it highly susceptible to interference from external factors such as changes in ambient temperature and humidity, corrosive gases, and mechanical friction.
[0004] Such external interference can directly cause changes in the microstructure of conductive circuits, leading to the degradation of material properties, resulting in unstable heating power, poor circuit contact, local overheating, or even short circuits or open circuits, thus affecting the safety and service life of transparent heating glass. Summary of the Invention
[0005] To overcome the shortcomings of the prior art, this application provides a method for preparing transparent heating glass and the transparent heating glass itself. By embedding conductive lines between glass layers, interference from external environmental factors on the conductive lines is avoided, thereby improving the reliability and service life of the transparent heating glass.
[0006] The technical solution adopted by this application to solve its technical problem is:
[0007] In a first aspect, this application provides a method for preparing transparent heating glass, the method comprising:
[0008] Select a first glass layer and spray silver powder onto the first surface of the first glass layer using a supersonic flame spraying process to form an initial silver layer;
[0009] The initial silver layer is ground to achieve a preset flatness, resulting in a planar silver layer.
[0010] Conductive lines are etched on the surface of the planar silver layer, and silver is plated at the parallel edges of the planar silver layer to create silver electrode pairs, such that the silver electrode pairs are electrically connected through the conductive lines.
[0011] Select a second glass layer that matches the first glass layer, and create a through hole in the second glass layer at the position corresponding to the silver electrode pair;
[0012] Obtain molten glass, coat the molten glass onto the surface of the second glass layer, and align and press the coated surface of the second glass layer with the first surface of the first glass layer so that the silver electrode is aligned with the through hole;
[0013] Under a preset sintering environment, the first glass layer and the second glass layer are melted together by the glass melt, and the electrode wires of the silver electrode pair are led out and welded through the through hole to obtain transparent heating glass.
[0014] Optionally, in the step of spraying silver powder onto the first surface of the first glass layer using a supersonic flame spraying process, the particle size of the silver powder is 2500 mesh.
[0015] Optionally, the preset flatness value range is no greater than 2μm.
[0016] Optionally, the line width of the conductive line is 10 μm.
[0017] Optionally, the shape, size, and thickness of the second glass layer are matched with those of the first glass layer.
[0018] Optionally, both the first glass layer and the second glass layer are formed using quartz glass.
[0019] Optionally, the diameter of the through hole is 5 mm.
[0020] Optionally, the preset sintering environment has a temperature of 1600℃, a pressure of 16 MPa, and a duration ranging from 10s to 30s.
[0021] Optionally, the step of obtaining molten glass includes:
[0022] Based on a preset ratio of the total mass of the first glass layer and the second glass layer, a corresponding mass of glass to be melted is selected; the glass type of the glass to be melted is the same as that of the first glass layer and the second glass layer.
[0023] The glass to be melted is heated and melted to form the molten glass.
[0024] Secondly, this application provides a transparent heating glass, which is prepared using the above-described method for preparing transparent heating glass.
[0025] The working principle of this application is as follows: First, in the fabrication stage of the conductive circuit, silver powder is sprayed onto the surface of the first glass layer using a supersonic flame spraying process. After spraying, the silver layer is ground to achieve a preset flatness, and then the conductive circuit is etched into the silver layer using photolithography.
[0026] Secondly, in the structural encapsulation stage, this application selects a second glass layer, opens through holes corresponding to the electrode positions, and uses molten glass to sinter the two glass layers together under high temperature and pressure. This process completely seals the conductive lines and silver electrode pairs inside the glass, with the electrode wires only led out through the through holes.
[0027] In summary, the beneficial effects of this application are: by isolating the conductive lines from the external environment through the internal encapsulation structure, it avoids contact and interference from external environmental factors (such as temperature, humidity, corrosive gases, and mechanical friction) on the conductive lines. Since the conductive lines are no longer exposed, their microstructure remains largely unchanged due to changes in the external environment, thereby mitigating the risks of resistance changes, poor contact, short circuits, or open circuits caused by oxidation, corrosion, or physical damage. Attached Figure Description
[0028] Figure 1 This is a schematic flowchart of the method for preparing transparent heated glass provided in the embodiments of this application;
[0029] Figure 2 This is a schematic diagram of the structure of the transparent heating glass provided in the embodiments of this application.
[0030] Figure label:
[0031] 1. First glass layer; 2. Planar silver layer; 3. Silver electrode pair; 4. Second glass layer. Detailed Implementation
[0032] The present application will be further described below with reference to the accompanying drawings and embodiments.
[0033] The following will clearly and completely describe the concept, specific structure, and resulting technical effects of this application in conjunction with embodiments and accompanying drawings, so as to fully understand the purpose, features, and effects of this application. Obviously, the described embodiments are only a part of the embodiments of this application, not all of them. Other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are all within the scope of protection of this application. Furthermore, all connections / linkages involved in the patent do not simply refer to direct contact between components, but rather to the ability to form a better connection structure by adding or reducing connecting accessories according to specific implementation conditions. The various technical features in this application can be combined interactively without contradicting each other.
[0034] In the semiconductor manufacturing industry, transparent heating glass is a key component in photolithography equipment, thin film deposition equipment, wafer bonding equipment, and rapid thermal processing (RTP) equipment. Particularly in the photoresist removal process during wafer fabrication, this glass, acting as a physical isolation window within the vacuum chamber, needs to heat the wafer to a high temperature within seconds to facilitate the separation and shedding of the photosensitive adhesive, while simultaneously requiring high light transmittance for real-time visual inspection of process quality. This application scenario places extremely high demands on the heating glass's temperature uniformity, power accuracy, and environmental tolerance.
[0035] Currently, the commonly used technical solution in the industry is to prepare indium tin oxide (ITO) as a conductive and resistive layer on the glass surface through a coating process. However, this method has the following drawbacks:
[0036] On the one hand, ITO material itself has limited temperature resistance, with a maximum operating temperature of only 350 degrees Celsius, and its thickness as a conductive line is extremely thin, typically only 3.5 μm. This physical characteristic determines that it cannot withstand higher temperature processing environments, let alone the 1600 degrees Celsius required for high-temperature melting of double-layer glass, otherwise the ITO layer will peel off. Therefore, existing technologies cannot use high-temperature molten glass for sandwich encapsulation and can only remain at the stage of coating a single-layer glass surface;
[0037] On the other hand, since high-temperature glass melting and encapsulation is not possible, attempting to use conventional adhesives for double-layer glass bonding faces multiple technical obstacles: the moisture in the adhesive can cause hydrolysis and oxidation of the ITO layer and silver paste electrodes; the insufficient transparency and poor coating precision of the adhesive itself can lead to decreased light transmittance, a large number of residual air bubbles inside, and delamination of the upper and lower glass layers, thus affecting temperature accuracy; in addition, the penetration of adhesive at the through-holes can also form adhesive marks, further interfering with optical detection.
[0038] Therefore, the conductive circuits of transparent heating glass prepared by current mainstream methods are exposed to the environment and are easily affected by ambient temperature and humidity, corrosive gases and mechanical friction, which leads to changes in the microstructure of the conductive layer, resulting in resistance fluctuations and power instability, and even poor circuit contact, short circuit or open circuit, making it difficult to meet the stringent requirements of the semiconductor industry for high reliability.
[0039] To address the aforementioned technical deficiencies, refer to Figure 1 , Figure 1 This is a schematic flowchart of the method for preparing transparent heated glass provided in the embodiments of this application. Figure 1 The document illustrates several key steps involved in the preparation of the transparent heated glass provided in this application, which are described in detail below:
[0040] In step S1, a first glass layer 1 is selected, and silver powder is sprayed onto the first surface of the first glass layer 1 using a supersonic flame spraying process to form an initial silver layer.
[0041] The first glass layer 1 refers to the substrate glass, which carries the subsequent conductive lines and electrode pairs. Supersonic flame spraying is a process that uses a high-temperature flame to accelerate and spray powder material onto the substrate surface. The material sprayed here is silver powder, which is used to replace indium tin oxide in forming the conductive layer.
[0042] It is worth noting that in this embodiment, the silver powder being sprayed has a particle size of 2500 mesh. Particle size is a unit of measurement for particle size, referring to the number of openings per square inch on a sieve. A higher mesh number indicates a denser sieve, meaning smaller particles can pass through. This fine powder, under high-speed impact, can form a more compact and smooth aggregate structure, effectively reducing gaps between particles and the roughness of the coating surface.
[0043] Furthermore, while silver is completely opaque in its macroscopic bulk state, its light-blocking effect is significantly reduced when it is prepared into extremely fine silver powder particles, especially micron-sized particles. When these tiny silver powder particles are deposited on the glass surface to form conductive lines through a spraying process, they do not form a dense, thick metal plate, but rather a thin layer composed of stacked tiny particles. Light can pass through the silver powder particles, ensuring the light transmittance of the final transparent heated glass. This allows operators or optical sensors to clearly observe the wafer state through the circuit area while the heated glass is in operation, meeting the visualization requirements of semiconductor processes.
[0044] Specifically, firstly, the first glass layer 1 is fixed to the processing table. Then, the supersonic flame spraying equipment is activated, and fuel (such as kerosene, propane, etc.) mixes and burns with oxygen in the combustion chamber, generating high-temperature, high-pressure gas. This high-temperature, high-pressure gas is accelerated to supersonic speed through a Laval nozzle, forming a high-speed flame stream.
[0045] Meanwhile, the silver powder is fed into the flame stream, where it is heated to a molten or semi-molten state during flight and accelerated to gain extremely high kinetic energy. When these high-speed silver powder particles collide with the first surface of the first glass layer 1, they undergo violent plastic deformation, thereby rapidly cooling and solidifying to achieve the spraying effect and form a firmly adhered initial silver layer.
[0046] More specifically, compared to the current mainstream method of depositing indium tin oxide onto glass using magnetron sputtering, the supersonic flame spraying method used in this application can prepare a silver layer with a thickness far exceeding that of a conventional ITO thin film (approximately 3.5 μm) (up to 50 μm). This increased thickness directly enhances the current carrying capacity of the conductive layer, enabling it to meet the demands of instantaneous high-power heating in rapid thermal processing (RTP) processes and preventing circuit meltdown due to excessive current.
[0047] Secondly, the high-speed impact causes the silver powder particles to undergo strong plastic deformation during deposition, eliminating gaps between particles and forming a coating with extremely high density (extremely low porosity). This dense structure not only reduces resistivity but also effectively prevents the penetration of corrosive media, thereby significantly improving the service life and reliability of heated glass in harsh environments.
[0048] In step S2, the initial silver layer is ground to achieve a preset flatness, resulting in a planar silver layer 2.
[0049] Among them, the preset flatness refers to the surface flatness index set to meet the requirements of subsequent high-precision photolithography process; while the planar silver material layer 2 refers to the silver conductive layer that has reduced surface roughness and met the flatness standard after mechanical grinding and correction, and has the basis for photolithography.
[0050] Specifically, since spraying is a physical deposition process, the surface of this layer usually has microscopic particle accumulation and undulations. Step S2 involves placing the first glass layer 1 with the initial silver layer on a precision grinding device. Through the relative movement of the grinding disc and the surface of the silver layer, combined with the grinding media (such as grinding fluid or abrasive), the surface of the initial silver layer is micro-cut. This process smooths out the peaks and microscopic pits of silver powder particles formed during the spraying process, thereby transforming the rough initial silver layer into a planar silver layer 2 with a uniform surface height and a smooth surface.
[0051] More specifically, in the embodiments of this application, the preset flatness value range is no greater than 2 μm. Specifically, after the silver layer has undergone grinding, the height difference (or flatness error) between the highest and lowest points on its surface must be controlled within 2 micrometers, providing an ideal physical basis for subsequent photoresist coating and exposure development, and ensuring the accuracy of the photolithography process at the microscale.
[0052] In step S3, conductive lines are etched on the surface of the planar silver layer 2, and silver is plated at the parallel edges of the planar silver layer 2 to create silver electrode pairs 3, so that the silver electrode pairs 3 are electrically connected through the conductive lines.
[0053] Here, the conductive lines refer to metal traces of specific geometric shapes processed on the planar silver layer 2 through photolithography etching; the silver electrode pairs 3 refer to conductive terminals thickened by silver plating at opposite parallel edges (i.e., two opposite locations) of the planar silver layer 2, serving as the connection interface between the external power supply and the internal circuitry. Silver plating is a process of increasing the thickness of the silver layer in a specific area through electrochemical deposition.
[0054] Specifically, firstly, a photoresist is coated onto the flat surface of the planar silver layer 2. A pre-designed circuit pattern is then transferred onto the photoresist through exposure and development. Subsequently, an etching process is used to remove the silver layer not protected by the photoresist, leaving behind silver portions that form meandering or parallel conductive lines. Simultaneously, additional silver layers are deposited at the parallel edge regions at both ends of the conductive lines using an electroplating process, forming a thicker, more conductive silver electrode pair 3. Finally, the silver electrode pair 3 is physically integrated with the conductive lines, constructing a complete current conduction path, allowing external current to be uniformly introduced into the conductive lines through the electrode pair.
[0055] More specifically, this application replaces traditional screen printing with photolithography etching, enabling the fabrication of conductive lines with extremely fine linewidths and high precision. This not only improves the light transmittance of the heated glass but also allows for more complex resistance distribution designs, thereby ensuring uniform heating. Secondly, a silver electrode pair 3 is fabricated by specially silver-plating at the edges, solving the problem of thin-layer silver lines easily melting or experiencing poor contact due to overheating during soldering. The thickened electrode pair provides sufficient metal volume, significantly reducing contact resistance, enhancing mechanical strength, and ensuring the reliability and stability of the connection between the electrode and external conductors under high current surges.
[0056] It is worth noting that in this embodiment, since a silver powder spraying method is used, the planar silver layer 2 formed by this method can reach 50μm, providing sufficient vertical material allowance for etching. Therefore, the thick planar silver layer 2 can be processed into a conductive line with a width of only 10μm. Specifically, after photolithography and development, excess silver layer is dissolved vertically downwards using a chemical etchant. Because the silver layer is thick enough, even if the line width is compressed to 10μm, the line still maintains a sufficient vertical cross-sectional area. This structure utilizes the volume advantage of the thick silver layer, achieving extremely fine lines while ensuring the physical strength of the current transmission channel, enabling the fine lines to withstand high current surges under high-temperature environments without melting or breakdown.
[0057] More specifically, firstly, the ultra-fine 10μm linewidth significantly improves the light transmittance of the transparent heating glass, making the lines virtually invisible and meeting the high-resolution observation requirements of photolithography. Secondly, current mainstream solutions using electroplating are limited to three layers (approximately 12.5μm) due to process limitations. If this thin layer is etched to a width of 10μm, the lines are prone to breakdown under high current due to excessive resistance or insufficient mechanical strength. This application, however, utilizes a 50μm thick silver layer, allowing the 10μm fine lines to still possess a large cross-sectional area, thus exhibiting excellent current-carrying capacity. This enables the heating glass to operate under high current for extended periods at high temperatures, achieving both high light transmittance and ensuring high-power heating and long-term reliability.
[0058] Furthermore, in the embodiments of this application, the thickness of the silver plating on each electrode in the silver electrode pair 3 is 35 μm, and the linewidth of the electrode wire is 3-5 mm.
[0059] In step S4, a second glass layer 4 that matches the first glass layer 1 is selected, and a through hole is made in the second glass layer 4 at the position corresponding to the silver electrode pair 3.
[0060] The second glass layer 4 refers to a quartz glass substrate that matches the first glass layer 1 in terms of material, coefficient of thermal expansion and optical performance. Together, they form the sandwich structure of the heating component. Specifically, the second glass layer 4 should be basically the same as the first glass layer 1 in terms of shape, size, material and thickness.
[0061] Because glass expands when heated and contracts when cooled, and the degree of expansion is determined by the coefficient of thermal expansion, if there is a significant difference in thickness between the two layers, the thermal conductivity and thermal inertia of the thin and thick layers will be different under high temperature conditions of rapid heating and cooling. This will cause the two layers of glass to expand or contract asynchronously during transient temperature changes, and this asynchrony can easily lead to component breakage.
[0062] Therefore, by strictly controlling the thickness of the second glass layer 4 to be consistent with that of the first glass layer 1 (both are about 5 mm thick), it is ensured that the upper and lower layers have the same thermal response speed during heating and cooling, thus achieving synchronization of thermal expansion and avoiding thermal stress concentration caused by thickness difference, thereby extending the service life of transparent heating glass.
[0063] In this embodiment, both the first glass layer 1 and the second glass layer 4 are formed using quartz glass. Quartz glass refers to a special material used in these two substrate layers, namely a special glass with an extremely high silica content. It differs significantly from common soda-lime glass (temperature resistance below 100°C) or borosilicate glass (temperature resistance approximately 850°C). Considering that the transparent heating glass provided in this application is mainly used in semiconductor processing, and given that semiconductor rapid thermal processing typically involves extreme high-temperature environments of 1000°C to 1400°C, ordinary soda-lime glass would soften and crack due to insufficient temperature resistance, and even high-temperature resistant borosilicate glass cannot meet the process limit exceeding 1000°C. Therefore, quartz glass must be selected as the substrate for the first glass layer 1 and the second glass layer 4, utilizing its extremely low coefficient of thermal expansion and extremely high softening point to ensure the stability of the component's physical form at high temperatures.
[0064] Furthermore, a through-hole refers to a through-hole structure formed on the second glass layer 4 by laser drilling or mechanical drilling. Its position strictly corresponds to the mounting position of the silver electrode pair 3 on the first glass layer 1, and is intended to provide a physical channel for external power leads. In this embodiment, the diameter of the through-hole is set to approximately 5 mm.
[0065] Specifically, a matching second glass layer 4 is used to cover the surface of the conductive circuit, providing a physical protective shell for the conductive circuit and completely isolating it from the external environment. This solves the problem that the conductive layer is easily corroded by corrosive gases and damaged by mechanical friction in traditional surface coating processes, and also meets the light transmittance requirements.
[0066] Furthermore, in the embodiments of this application, both the first glass layer 1 and the second glass layer 4 are formed using quartz glass processing.
[0067] In step S5, molten glass is obtained, the molten glass is coated on the surface of the second glass layer 4, and the coated surface of the second glass layer 4 is aligned and pressed with the first surface of the first glass layer 1 so that the silver electrode pair 3 is directly opposite the through hole.
[0068] Here, molten glass refers to glass material in a molten or semi-molten state, whose chemical composition is consistent with that of the first glass layer 1 and the second glass layer 4, serving as the raw material for the subsequent formation of the intermediate adhesive layer; coating refers to the process of uniformly spreading molten glass at high temperature onto the surface of the second glass layer 4; and alignment pressing refers to the operation of flipping the second glass layer 4 coated with molten glass onto the first glass layer 1 while maintaining a high temperature, and applying pressure to make the two glass layers adhere tightly together.
[0069] Specifically, molten glass is first coated onto the surface of the second glass layer 4. Then, alignment and pressing are performed, utilizing the fluidity of the molten glass to conform to the microstructure of the first surface, encapsulating the internal silver electrode pair 3 and conductive circuitry. During the pressing process, an optical or mechanical alignment system is used to precisely calibrate the positions of the through-holes on the second glass layer 4 and the silver electrode pair 3 on the first glass layer 1, ensuring they coincide.
[0070] It is worth noting that, in the embodiments of this application, the step of obtaining molten glass includes:
[0071] Based on a preset ratio of the total mass of the first glass layer 1 and the second glass layer 4, a corresponding mass of glass to be melted is selected; the glass type of the glass to be melted is the same as that of the first glass layer 1 and the second glass layer 4.
[0072] The glass to be melted is heated and melted to form the molten glass.
[0073] The glass to be fused refers to an independent glass material used as the raw material for the intermediate bonding layer. Its chemical composition, coefficient of thermal expansion, and material type (such as quartz glass) are completely consistent with the aforementioned first glass layer 1 and second glass layer 4 to ensure the homogeneity of the bonded materials. The preset ratio refers to a specific ratio between the mass of the glass to be fused and the total mass of the first glass layer 1 and second glass layer 4. According to process requirements, this ratio is set to 15%, meaning that the mass of the glass to be fused accounts for 15% of the total mass of the upper and lower substrate layers.
[0074] In step S6, under a preset sintering environment, the first glass layer 1 and the second glass layer 4 are melted together by the glass melt, and the electrode wires of the silver electrode pair 3 are led out and welded through the through hole to obtain transparent heating glass.
[0075] The preset sintering environment refers to the specific high-temperature process conditions set for the solidification and interlayer bonding of the molten glass. In this embodiment, it is specifically defined as a process environment with a temperature of 1600℃, a pressure of 16 MPa, and a duration of 10 to 30 seconds. 600℃ is the peak temperature during the sintering process, which is sufficient to make the quartz glass reach a high-viscosity flow state and promote rapid diffusion between molecules. 16 MPa refers to the mechanical pressure applied to the glass assembly, which falls under the category of high-pressure sintering and is used to apply physical extrusion to the material at high temperatures. 10 to 30 seconds refers to the extremely short time that the material is held under these high-temperature and high-pressure conditions. This rapid sintering mode aims to complete densification using instantaneous energy input, avoiding the negative effects of prolonged heat treatment.
[0076] Specifically, under a pre-defined sintering environment, the molten glass not only fills the space between the first glass layer 1 and the second glass layer 4, but also gradually solidifies as the temperature is maintained and the glass slowly cools, melting the two originally separate glass substrates into one at the molecular level. Subsequently, electrode wires are introduced into the interior through through-holes and welded to the silver electrode pair 3 to obtain the transparent heating glass provided in this application.
[0077] Secondly, this application provides a transparent heating glass, which is prepared using the above-described method for preparing transparent heating glass.
[0078] The above is a detailed description of the preferred embodiments of this application. However, the invention of this application is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of this application. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.
Claims
1. A method for preparing transparent heating glass, characterized in that, The method includes: Select a first glass layer (1), and spray silver powder onto the first surface of the first glass layer (1) using a supersonic flame spraying process to form an initial silver layer; in the step of spraying silver powder onto the first surface of the first glass layer (1) using a supersonic flame spraying process, the particle size of the silver powder is 2500 mesh. The initial silver layer is ground to achieve a preset flatness, resulting in a planar silver layer (2); the preset flatness is no greater than 2μm. Conductive lines are etched on the surface of the planar silver layer (2), and silver is plated at the parallel edges of the planar silver layer (2) to create silver electrode pairs (3), so that the silver electrode pairs (3) are electrically connected through the conductive lines. A second glass layer (4) matching the first glass layer (1) is selected, and a through hole is made in the second glass layer (4) at the position corresponding to the silver electrode pair (3); both the first glass layer (1) and the second glass layer (4) are formed by processing quartz glass; Get the glass melt, coat the glass melt onto the surface of the second glass layer (4), and align and press the coated surface of the second glass layer (4) with the first surface of the first glass layer (1) so that the silver electrode pair (3) is facing the through hole; Under a preset sintering environment, the first glass layer (1) and the second glass layer (4) are melted together by the glass melt, and the electrode wires of the silver electrode pair (3) are led out and welded through the through hole to obtain transparent heating glass; The steps for obtaining molten glass include: Based on a preset ratio of the total mass of the first glass layer (1) and the second glass layer (4), a glass of the corresponding mass is selected to be melted; the glass type of the glass to be melted is the same as that of the first glass layer (1) and the second glass layer (4); The glass to be melted is heated and melted to form the molten glass.
2. The method for preparing transparent heating glass according to claim 1, characterized in that, The line width of the conductive line is 10 μm.
3. The method for preparing transparent heated glass according to claim 1, characterized in that, The shape, size and thickness of the second glass layer (4) are matched with those of the first glass layer (1).
4. The method for preparing transparent heating glass according to claim 1, characterized in that, The diameter of the through hole is 5 mm.
5. The method for preparing transparent heating glass according to claim 1, characterized in that, The preset sintering environment has a temperature of 1600℃, a pressure of 16 MPa, and a duration ranging from 10s to 30s.
6. A transparent heating glass, characterized in that, It is prepared by the method for preparing transparent heated glass as described in any one of claims 1-5.
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