Antenna and communication equipment

Abstract

The invention relates to the technical field of antennas, in particular to an antenna and communication equipment. The antenna comprises a substrate, a pattern layer and a dielectric layer, the substrate is provided with a plurality of antenna units, the pattern layer is provided with a semiconductor pattern, the semiconductor pattern is grounded, and the semiconductor pattern is connected with the plurality of antenna units; the dielectric layer is arranged on the side, back to the substrate, of the pattern layer, and the dielectric layer is used for sealing the pattern layer between the substrate and the dielectric layer. The antenna is provided with the semiconductor pattern, electrostatic ions generated by the antenna unit can be released through the metal floor, and the influence of the electrostatic ions on the antenna is reduced.

Description

Technical Field

[0001] This application relates to the field of antenna technology, and more particularly to an antenna and communication device. Background Technology

[0002] Antenna elements are crucial components in communication systems, responsible for signal reception and transmission. During operation, antenna elements accumulate static ions, which can discharge. This discharge can damage the active circuitry within the antenna element, causing the communication system to malfunction. Furthermore, the electromagnetic interference generated during static ion discharge can also affect data transmission, degrading communication quality.

[0003] Therefore, how to reduce the impact of electrostatic ion generation by antenna elements has become an urgent problem to be solved. Summary of the Invention

[0004] This application provides an antenna and a communication device. The antenna has a semiconductor pattern, which can release electrostatic ions generated by the antenna element through a metal ground plane, thereby reducing the impact of electrostatic ions on the antenna.

[0005] In a first aspect, this application provides an antenna comprising a substrate, a patterned layer, and a dielectric layer. The substrate is provided with a plurality of antenna elements, the patterned layer has a semiconductor pattern, the semiconductor pattern is grounded, and the semiconductor pattern is connected to the plurality of antenna elements. The dielectric layer is disposed on the side of the patterned layer opposite to the substrate, and the dielectric layer is used to seal the patterned layer between the substrate and the dielectric layer.

[0006] In the antenna of this application, since the antenna elements are connected to the semiconductor pattern and the semiconductor pattern is grounded, the electrostatic ions generated by multiple antenna elements can be released through the semiconductor pattern via the metal ground plane, preventing the accumulation of electrostatic ions and thus reducing the damage of electrostatic ions to the active circuit and the impact of electrostatic ions on the data transmission of the antenna elements. Furthermore, the dielectric layer seals the pattern layer between the substrate and the dielectric layer, effectively protecting the semiconductor pattern in the pattern layer and preventing oxidation and deliquescence.

[0007] In some embodiments, the resistivity of the semiconductor pattern material is 10⁻⁶. -4 Ω·cm to 10 9 Ω·cm.

[0008] This ensures that only electrostatic ions can conduct between the antenna element and the metal ground plane, without affecting the radio frequency signal. The semiconductor pattern material can be silicon, tin, gallium arsenide, gallium nitride, indium phosphide, zinc sulfide, zinc selenide, zinc oxide, silicon carbide, semiconductor graphene, or germanium, etc.

[0009] In some embodiments, the antenna further includes a metal ground plane disposed on the side of the substrate opposite to the antenna element, and the semiconductor pattern is connected to the metal ground plane. The metal ground plane is used to release electrostatic ions.

[0010] In some embodiments, the substrate has a first surface and a second surface disposed opposite to each other. The plurality of antenna elements are disposed on the first surface of the substrate, and the dielectric layer is disposed on the second surface of the substrate. The projection of the dielectric layer onto the second surface of the substrate completely covers the projection of the pattern layer onto the second surface of the substrate, thus effectively protecting the semiconductor pattern in the pattern layer. The plurality of first antenna elements located on the first surface of the substrate facilitate adjustment of the antenna elements by the user.

[0011] In some embodiments, the substrate has a plurality of traces that connect the plurality of antenna elements to the semiconductor pattern. In this configuration, electrostatic ions generated by the plurality of antenna elements are conducted to the semiconductor pattern through the traces, and then released by the semiconductor pattern through grounding, i.e., released by the semiconductor pattern through the metal ground plane.

[0012] In some embodiments, the substrate may have multiple vias, through which multiple traces and multiple antenna elements can be connected. It is also possible to release electrostatic ions generated by the antenna elements through a semiconductor pattern grounding.

[0013] In some embodiments, a first metallized via is provided on the dielectric layer, and the semiconductor pattern is connected to the first metallized via. The first metallized via is grounded. The provision of the first metallized via facilitates the grounding of the semiconductor pattern. When the semiconductor pattern is connected to the first metallized via, the semiconductor pattern can be connected to the inner wall of the first metallized via. The grounding of the first metallized via can be understood as the first metallized via being connected to a metal ground plane.

[0014] In some embodiments, a second metallized via is provided on the substrate, and the inner walls of the first metallized via and the second metallized via are connected. The provision of the second metallized via facilitates electrical connection between the active circuit and multiple antenna elements.

[0015] In some embodiments, the substrate has a first surface and a second surface disposed opposite to each other. The plurality of antenna elements are disposed on the first surface of the substrate, and the dielectric layer is disposed on the first surface of the substrate. The projection of the dielectric layer on the first surface of the substrate completely covers the projection of the pattern layer on the first surface of the substrate. When the dielectric layer seals the semiconductor pattern in the pattern layer, it also seals the plurality of antenna elements disposed on the first surface, which can make the plurality of antenna elements more stable during operation and less affected by the external environment.

[0016] In some embodiments, a third metallized via is provided on the substrate, and the semiconductor pattern is grounded through the third metallized via. The third metallized via facilitates the electrical connection of the active circuit with multiple antenna elements.

[0017] In some embodiments, the projections of the plurality of antenna elements onto the first surface of the substrate at least partially overlap with the projection of the semiconductor pattern onto the first surface of the substrate. This ensures that each antenna element can be connected to the semiconductor pattern, allowing the electrostatic ions generated by each antenna element to be promptly conducted to the metal ground plane.

[0018] In some embodiments, the plurality of antenna elements are arranged in an array on the substrate. The substrate may be circular, rectangular, rhomboid, or polygonal in shape.

[0019] Secondly, this application also provides a communication device, including a transmitter / receiver and an antenna as described in any of the technical solutions of the first aspect. The antenna is connected to the transmitter or receiver, and can receive radio frequency signals transmitted by the transmitter and transmit the radio frequency signals to external space, or the antenna can receive external signals and transmit the signals to the receiver. Since the antenna can stably release the electrostatic ions generated in the antenna element, it can ensure the stable operation of the antenna, thereby ensuring the stable operation of the communication device. It can also improve the stability of data transmission in the antenna element, thus improving the communication quality of the communication device. Attached Figure Description

[0020] Figure 1 A schematic diagram of the structure of a communication device provided in an embodiment of this application;

[0021] Figure 2 This is a schematic diagram of the antenna structure provided in an embodiment of this application;

[0022] Figure 3 This is a partial structural diagram of an antenna provided in an embodiment of this application;

[0023] Figure 4 A top view of an antenna provided in an embodiment of this application;

[0024] Figure 5 Another top view of the antenna provided in an embodiment of this application;

[0025] Figure 6 Another top view of the antenna provided in an embodiment of this application;

[0026] Figure 7 A top view of the dielectric layer in an antenna provided in an embodiment of this application;

[0027] Figure 8 for Figure 6 A sectional view;

[0028] Figure 9 A partial structural diagram of the antenna provided in an embodiment of this application;

[0029] Figure 10 A schematic diagram of the structure of an antenna provided in an embodiment of this application;

[0030] Figure 11 A top view of an antenna provided in an embodiment of this application;

[0031] Figure 12 Another top view of the antenna provided in an embodiment of this application;

[0032] Figure 13 This is a top view of the dielectric layer in the antenna provided in an embodiment of this application;

[0033] Figure 14 for Figure 13 A sectional view;

[0034] Figure 15 This is a partial structural diagram of an antenna provided in an embodiment of this application.

[0035] Figure label:

[0036] 1-Antenna; 11-Substrate; 110-Antenna element; 111-Trace; 112-Second metallized via; 113-Third metallized via; 12-Patterned layer; 120-Semiconductor pattern; 121-First semiconductor trace; 122-Second semiconductor trace; 123-Third semiconductor trace; 124-Fourth semiconductor trace; 125-Connection trace; 13-Dielectric layer; 130-First metallized via; 14-Metal ground plane; 2-Transmitter; 3-Receiver. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this application clearer, the application will now be described in further detail with reference to the accompanying drawings.

[0038] With the development of wireless communication systems, the requirements for antennas are becoming increasingly stringent. During the operation of antennas, a certain amount of static ions will accumulate. The accumulated static ions will discharge, which can damage the active circuits in the antenna. The electromagnetic interference generated during the discharge process can also interfere with the data transmission of wireless communication devices.

[0039] Therefore, how to reduce the impact of electrostatic ions on antennas and wireless communication equipment has become an urgent problem to be solved.

[0040] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” “the,” and “this” are intended to also include expressions such as “one or more” unless the context clearly indicates otherwise.

[0041] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0042] Figure 1 A schematic diagram of the structure of a communication device provided in an embodiment of this application; see reference Figure 1 This application provides a communication device that may include an antenna 1, a transmitter 2, and a receiver 3. The antenna 1 is connected to the transmitter 2 and the receiver 3. The antenna 1 can receive radio frequency signals transmitted by the transmitter 2 and transmit the radio frequency signals to external space, or the antenna 1 can receive external signals and transmit the signals to the receiver 3. Since the antenna 1 can release electrostatic ions generated in the antenna element, it can ensure the stable operation of the antenna 1, thereby ensuring the stable operation of the communication device. It can also improve the stability of data transmission in the antenna element and enhance the communication quality of the communication device.

[0043] In this embodiment, the communication device can be a device that provides wireless communication function services. The communication device can be located on the network side, including but not limited to: next-generation base stations (gNodeB, gNB) in 5th generation (5G) communication systems, next-generation base stations in 6th generation (6G) mobile communication systems, base stations in future mobile communication systems, or access nodes in WiFi systems, etc., evolved node B (eNB), radio network controller (RNC), node B (NB), base station controller (BSC), home base station (e.g., home evolved NodeB, or home Node B, HNB), base band unit (BBU), transmission reception point (TRP), transmitting point (TP), base transceiver station (BTS), etc. in long term evolution (LTE) systems. In a network architecture, the communication equipment may include centralized unit (CU) nodes, distributed unit (DU) nodes, radio access network (RAN) equipment including CU and DU nodes, control plane CU nodes, user plane CU nodes, and RAN equipment for DU nodes. The communication equipment provides services to a cell, and user equipment communicates with the base station through the transmission resources (e.g., frequency domain resources, or spectrum resources) used by the cell. The cell can be a cell corresponding to a base station (e.g., a base station). The cell can belong to a macro base station or a base station corresponding to a small cell. Small cells can include metro cells, micro cells, pico cells, femto cells, etc. These small cells have the characteristics of small coverage area and low transmission power, making them suitable for providing high-speed data transmission services.The communication equipment can be a macro base station, a micro base station, an indoor station, a relay node, or a donor node. It can also include devices providing wireless communication services to user equipment in a V2X communication system, wireless controllers, relay stations, vehicle-mounted devices, wearable devices, and network equipment in future evolved networks. The embodiments of this application do not limit the specific technologies or device forms used in the communication equipment.

[0044] In other embodiments, the communication device can also be a terminal, which may also be referred to as a terminal device, user equipment (UE), mobile station (MS), mobile terminal (MT), etc. It can be an entity on the user side used to receive or transmit signals, such as a mobile phone. The terminal device can be a user equipment, wherein the UE includes a handheld device, in-vehicle device, wearable device, or computing device with wireless communication capabilities. For example, the UE can be a mobile phone, tablet computer, or computer with wireless transceiver capabilities. The terminal device can also be a virtual reality (VR) terminal device, an augmented reality (AR) terminal device, a wireless terminal in industrial control, a wireless terminal in autonomous driving, a wireless terminal in telemedicine, a wireless terminal in a smart grid, a wireless terminal in a smart city, a wireless terminal in a smart home, and so on. Terminals can be widely used in various scenarios, such as device-to-device (D2D), vehicle-to-everything (V2X) communication, machine-type communication (MTC), Internet of Things (IoT), virtual reality, augmented reality, industrial control, autonomous driving, telemedicine, smart grids, smart furniture, smart offices, smart wearables, smart transportation, and smart cities. Terminals can be mobile phones, tablets, computers with wireless transceiver capabilities, wearable devices, vehicles, drones, helicopters, airplanes, ships, robots, robotic arms, smart home devices, etc.

[0045] Figure 2 This is a schematic diagram of the antenna structure provided in an embodiment of this application, with reference to... Figure 2Antenna 1 may include a substrate 11, a pattern layer 12, a dielectric layer 13, a metal ground plane 14, and an active circuit (not shown in the figure). The substrate 11 may be provided with a plurality of antenna elements 110. The pattern layer 12 has a semiconductor pattern. The dielectric layer 13 is disposed on the side of the pattern layer 12 facing away from the substrate 11. The active circuit is electrically connected to the antenna elements 110 in antenna 1. The metal ground plane 14 is connected to the antenna elements 110 through the semiconductor pattern in antenna 1, that is, the semiconductor pattern is grounded, so that the electrostatic ions generated by the antenna elements 110 flow to the metal ground plane 14 through the semiconductor pattern to release the electrostatic ions generated by the antenna elements 110, thereby reducing the damage of electrostatic ions to the active circuit and also reducing the impact of electrostatic ions on the data transmission of antenna 1.

[0046] The antenna will be described in detail below.

[0047] Figure 3 This is a partial structural diagram of an antenna provided in an embodiment of this application. Figure 4 A top view of the antenna provided in an embodiment of this application. Figure 5 This is another top view of the antenna provided in an embodiment of this application. Figure 6 Another top view of the antenna provided in an embodiment of this application. (Refer to...) Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 6 Antenna 1 may include a substrate 11, a pattern layer 12, and a dielectric layer 13. The substrate 11 may be provided with multiple antenna elements 110. The pattern layer 12 has a semiconductor pattern 120. The dielectric layer 13 is disposed on the side of the pattern layer 12 facing away from the substrate 11, and the pattern layer 12 is located between the dielectric layer 13 and the substrate 11. The dielectric layer 13 is used to seal the pattern layer 12 between the substrate 11 and the dielectric layer 13. The semiconductor pattern 120 is grounded, that is, the semiconductor pattern 120 is connected to the metal ground plane 14. When the antenna element 110 generates electrostatic ions, since the antenna element 110 is connected to the semiconductor pattern 120 in the pattern layer 12, and the semiconductor pattern 120 is also connected to the metal ground plane 14, the electrostatic ions generated by the antenna element 110 can be conducted to the metal ground plane 14 through the semiconductor pattern 120 and released, thereby preventing the accumulation of electrostatic ions, thereby reducing the damage of electrostatic ions to the active circuit, and also reducing the impact of electrostatic ions on the data transmission of the antenna element 110.

[0048] The semiconductor pattern 120 can be made of materials such as tin, gallium arsenide, gallium nitride, indium phosphide, zinc sulfide, zinc selenide, zinc oxide, silicon carbide, semiconductor graphene, or germanium. The substrate 11, pattern layer 12, and dielectric layer 13 can have the same or different shapes. For example, the substrate 11, pattern layer 12, and dielectric layer 13 can have circular, rectangular, rhomboid, or polygonal shapes.

[0049] To ensure that the antenna element 110 and the metal ground plane 14 are connected only by electrostatic ions, the resistivity of the semiconductor pattern 120 is 10. -4 Ω·cm to 10 9 Ω·cm.

[0050] The substrate 11 may have a first surface and a second surface disposed opposite to each other along the thickness direction of the substrate 11. Multiple antenna elements 110 are disposed on the first surface of the substrate 11, and a dielectric layer 13 is disposed on the second surface of the substrate 11. The projection of the dielectric layer 13 onto the second surface of the substrate 11 completely covers the projection of the pattern layer onto the second surface of the substrate 11, so that the semiconductor pattern 120 in the pattern layer 12 is sealed between the substrate 11 and the dielectric layer 13, preventing the semiconductor pattern 120 from contacting air and ensuring the stability of the semiconductor pattern 120. Since the antenna elements 110 are disposed on the first surface of the substrate 11 and the pattern layer 12 is disposed on the second surface of the substrate 11, multiple traces 111 may be disposed within the substrate 11. The two ends of the traces 111 are respectively connected to the antenna elements 110 and the semiconductor pattern 120 to connect the multiple antenna elements 110 to the semiconductor pattern 120, allowing electrostatic ions generated by the antenna elements 110 to be conducted to the semiconductor pattern 120 and then discharged through the semiconductor pattern 120 to the metal ground plane 14.

[0051] It is worth mentioning that multiple antenna elements 110 can be arranged in an array on the first surface of the substrate 11, and multiple traces 111 can also be arranged in an array inside the substrate 11. The traces 111 can be elongated, L-shaped, or other shapes. In this case, the semiconductor pattern 120 can include a first semiconductor trace 121 and multiple second semiconductor traces 122. The multiple second semiconductor traces 122 are arranged in parallel and spaced apart. The extension direction of the second semiconductor traces 122 is the direction of the column where the multiple antenna elements 110 are arranged in an array. Each second semiconductor trace 122 is connected to multiple antenna elements 110 through multiple traces 111. The first semiconductor trace 121 connects the ends of the multiple second semiconductor traces 122 and is connected to the inner wall of the first metallized via 130.

[0052] In some other embodiments, a plurality of vias (not shown) may be provided on the substrate 11, and a plurality of antenna elements 110 may be connected to the semiconductor pattern 120 through the plurality of vias.

[0053] It is worth mentioning that when the dielectric layer 13 is disposed on the second surface of the substrate 11, the metal ground plane 14 is disposed on the side of the dielectric layer 13 facing away from the antenna element 110. In addition, when the dielectric layer 13 is disposed on the second surface of the substrate 11, the dielectric layer 13 can be laminated to the second surface of the substrate 11 by a multilayer board lamination process.

[0054] Figure 7 This is a top view of the dielectric layer in an antenna provided in an embodiment of this application. Figure 8 for Figure 7 The sectional view. Continue referring to... Figure 2 , Figure 4 , Figure 5 , Figure 7 and Figure 8 To ensure that the semiconductor pattern 120 can connect to the metal ground plane 14 to release electrostatic ions, the dielectric layer 13 is provided with a first metallized via 130. The semiconductor pattern 120 can connect to the first metallized via 130, and the end of the first metallized via 130 facing the metal ground plane 14 is also connected to the metal ground plane 14, that is, the first metallized via 130 is grounded. Specifically, the first metallized via 130 penetrates the dielectric layer 13 along the thickness direction of the dielectric layer 13.

[0055] Figure 9 This is a partial structural diagram of the antenna provided in an embodiment of this application, with reference to... Figure 2 , Figure 4 , Figure 5 and Figure 9 A second metallized via 112 is provided on the substrate 11, penetrating the substrate 11 along its thickness direction. The projections of the first metallized via 130 and the second metallized via 112 onto the substrate 11 coincide. This can be understood as the inner diameters of the first metallized via 130 and the second metallized via 112 being the same, and the first metallized via 130 and the second metallized via 112 being coaxially arranged. Thus, active circuitry can pass through the first metallized via 130 and the second metallized via 112 to connect with multiple antenna elements 110. Furthermore, the multiple antenna elements 110 are disposed on the first surface of the substrate 11, facilitating adjustment of the antenna elements 110. In order to ensure the ease of connection between the active circuit and the antenna unit 110, a metallized via can also be provided on the metal ground plane 14. The metallized via is connected to the first metallized through hole 130. It can be understood that the inner diameter of the first metallized through hole 130 is the same as the inner diameter of the metallized via, and the first metallized through hole 130 and the metallized via are coaxially arranged.

[0056] Figure 10 This is a schematic diagram of an antenna structure provided in an embodiment of this application. Figure 11 A top view of the antenna provided in an embodiment of this application. Figure 12 Another top view of the antenna provided in an embodiment of this application. (Refer to...) Figure 10 , Figure 11 and Figure 12The substrate 11 may have a first surface and a second surface disposed opposite to each other along the thickness direction of the substrate 11. Multiple antenna elements 110 are disposed on the first surface of the substrate 11 and are arranged in an array. A pattern layer 12 is disposed on the first surface of the substrate 11 and has a grounded semiconductor pattern 120 connected to the multiple antenna elements 110. A dielectric layer 13 is disposed on the side of the pattern layer 12 facing away from the substrate 11. The projection of the dielectric layer 13 onto the first surface of the substrate 11 completely covers the projection of the pattern layer 12 onto the first surface of the substrate 11. That is, the dielectric layer 13 and the substrate 11 can completely enclose the pattern layer 12, preventing the semiconductor pattern 120 in the pattern layer 12 from contacting external air, thus preventing oxidation or deliquescence of the semiconductor pattern 120 and improving the stability of antenna operation. In this configuration, the static electricity generated by the operation of the multiple antenna elements 110 can also be conducted to a metal ground plane through the semiconductor pattern 120. The metal ground plane is disposed on the side of the substrate 11 facing away from the dielectric layer 13. In addition, when the dielectric layer 13 completely covers and seals the pattern layer 12, the dielectric layer 13 also covers and seals the multiple antenna elements 110 disposed on the first surface of the substrate 11, so that the multiple antenna elements 110 are not affected by external factors when they are working.

[0057] Figure 13 This is a top view of the dielectric layer in the antenna provided in an embodiment of this application. Figure 14 for Figure 13 A sectional view. (Refer to...) Figure 10 , Figure 11 , Figure 12 , 13 and Figure 14 In order to ensure that air does not enter the antenna unit 110 and the pattern layer 12 when the dielectric layer 13 seals the pattern layer 12 and the antenna unit 110 on the first surface of the substrate 11, and to ensure that the semiconductor pattern 120 does not come into contact with the external air, no openings are provided on the dielectric layer 13.

[0058] Multiple antenna elements 110 are disposed on the first surface of the substrate 11. This can be understood as the multiple antenna elements 110 protruding from the first surface. When the pattern layer 12 is disposed on the first surface of the substrate 11, the pattern layer 12 can cover the side of the multiple antenna elements 110 facing away from the substrate 11. To ensure the stability of the connection between the semiconductor pattern 120 and the multiple antenna elements 110, the pattern layer 12 can fill the gaps between adjacent antenna elements 110. Furthermore, the projection of the semiconductor pattern 120 on the first surface of the substrate 11 at least partially overlaps with the projection of the multiple antenna elements 110 on the surface of the substrate 11, ensuring that the semiconductor pattern 120 and each antenna element 110 are in a connected state.

[0059] Figure 15 This is a partial structural diagram of an antenna provided in an embodiment of this application, with reference to... Figure 10 , Figure 11 , Figure 12 and Figure 15 When the dielectric layer 13 is disposed on the first surface of the substrate 11, the metal ground plane is disposed on the side of the substrate 11 away from the dielectric layer 13. A third metallized via 113 is disposed on the substrate 11, penetrating the substrate 11 along the thickness direction of the substrate 11. The third metallized via 113 is connected to the semiconductor pattern 120 and the metal ground plane respectively, that is, the third metallized via is grounded to ensure that the electrostatic ions generated by the antenna unit 110 can be released by the metal ground plane.

[0060] Multiple antenna elements 110 can be arrayed on the first surface of substrate 11. Semiconductor pattern 120 can include multiple third semiconductor traces 123 and two fourth semiconductor traces 124. The multiple third semiconductor traces 123 are arranged in parallel and spaced apart, and the two fourth semiconductor traces 124 are arranged in parallel and spaced apart. The third semiconductor traces 123 can extend along the row direction of the arrayed distribution of multiple antenna elements 110, and the fourth semiconductor traces 124 can extend along the column direction of the arrayed distribution of multiple antenna elements 110. One of the fourth semiconductor traces 124 is connected to one end of the multiple third semiconductor traces 123, and the other fourth semiconductor trace 124 is connected to the other end of the multiple third semiconductor traces 123. The projection of the multiple third semiconductor traces 123 on the first surface of substrate 11 at least partially overlaps with the projection of the multiple antenna elements 110 on the first surface of substrate 11. Electrostatic ions can be guided through the third semiconductor traces 123 to the fourth semiconductor traces 124, and then flow through the fourth semiconductor traces 124 to the third metallized via 113 to the metal ground plane.

[0061] In some embodiments, the projections of the two fourth semiconductor traces 124 on the first surface of the substrate 11 can at least partially coincide with the projection of the antenna unit 110 on the first surface of the substrate 11; or the projection of one of the two fourth semiconductor traces 124 on the first surface of the substrate 11 at least partially coincides with the projection of the antenna unit 110 on the first surface of the substrate 11; or, neither of the projections of the two fourth semiconductor traces 124 on the first surface of the substrate 11 coincides with the projection of the antenna unit 110 on the first surface of the substrate 11, and they are only connected to the antenna unit 110 through the third semiconductor trace 123. The specific implementation can be adjusted according to actual needs. It is worth mentioning that when the third metallized via 113 is not on the extension path of the fourth semiconductor trace 124 connected to it, the semiconductor pattern 120 may further include a connecting trace 125, which is used to connect the fourth semiconductor trace 124 to the third metallized via 113.

[0062] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the scope and intent of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application is also intended to include such modifications and variations.

Claims

1. An antenna, characterized in that, include: A substrate, wherein multiple antenna elements are disposed on the substrate; A patterned layer having a semiconductor pattern, the semiconductor pattern being grounded and connected to the plurality of antenna elements; A dielectric layer is disposed on the side of the patterned layer facing away from the substrate, and the dielectric layer is used to seal the patterned layer between the substrate and the dielectric layer.

2. The antenna as described in claim 1, characterized in that, The resistivity of the semiconductor pattern material is 10. -4 Ω·cm to 10 9 Ω·cm.

3. The antenna as described in claim 1 or 2, characterized in that, The substrate has a first surface and a second surface disposed opposite to each other. The plurality of antenna elements are disposed on the first surface of the substrate, and the dielectric layer is disposed on the second surface of the substrate. The projection of the dielectric layer on the second surface of the substrate completely covers the projection of the pattern layer on the second surface of the substrate.

4. The antenna as described in claim 3, characterized in that, The substrate has multiple traces that connect the multiple antenna elements to the semiconductor pattern.

5. The antenna as described in claim 3 or 4, characterized in that, A first metallized via is provided on the dielectric layer, the semiconductor pattern is connected to the first metallized via, and the first metallized via is grounded.

6. The antenna as described in claim 5, characterized in that, The substrate is provided with a second metallized through-hole, and the inner wall of the first metallized through-hole is connected to the inner wall of the second metallized through-hole.

7. The antenna as described in claim 1 or 2, characterized in that, The substrate has a first surface and a second surface disposed opposite to each other. The plurality of antenna elements are disposed on the first surface of the substrate. The dielectric layer is disposed on the first surface of the substrate. The projection of the dielectric layer on the first surface of the substrate completely covers the projection of the pattern layer on the first surface of the substrate.

8. The antenna as claimed in claim 7, characterized in that, A third metallized via is provided on the substrate, and the semiconductor pattern is grounded through the third metallized via.

9. The antenna as described in claim 7 or 8, characterized in that, The projections of the plurality of antenna elements onto the first surface of the substrate at least partially overlap with the projections of the semiconductor pattern onto the first surface of the substrate.

10. The antenna according to any one of claims 1 to 9, characterized in that, The semiconductor pattern is made of at least one of silicon, tin, gallium arsenide, gallium nitride, indium phosphide, zinc sulfide, zinc selenide, zinc oxide, silicon carbide, semiconductor graphene, or germanium.

11. The antenna as claimed in claim 10, characterized in that, The antenna also includes a metal ground plane, which is disposed on the side of the substrate opposite to the antenna unit, and the semiconductor pattern is connected to the metal ground plane.

12. A communication device, characterized in that, It includes a transmitter / receiver and an antenna as described in any one of claims 1 to 11, wherein the antenna is connected to the transmitter / receiver.

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