Method for enhancing temperature uniformity of heating plate, heater and application of heater

Abstract

The invention relates to the technical field of semiconductor processing, and particularly provides a method for enhancing the temperature uniformity of a heating disc, a heater and application of the heater, the method for enhancing the temperature uniformity of the heating disc comprises the steps that a ceramic ring is additionally arranged between the heating disc and a supporting pipe, and the thermal conductivity of the ceramic ring is smaller than 1 / 2 of the thermal conductivity of aluminum nitride. The ceramic material with remarkably low thermal conductivity is added between the heating plate and the supporting pipe, so that heat conduction is reduced, namely, heat loss at the joint of the heating plate is reduced, the temperature uniformity of the heating plate is enhanced, the service life of the heating wire at the joint is prolonged, and the service life of the heating wire is prolonged. And on the other hand, the quality of wafers and even final products is improved. The method provided by the invention has good technical support for semiconductor processing.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a method for enhancing the temperature uniformity of a heating plate and a heater and its application. Background Technology

[0002] In wafer fabrication, the heating pad is a critical component, responsible for providing uniform and precise heat to the wafer to enable various processing steps, such as thin film deposition, photoresist curing, and ion implantation. Heating pads are typically located within the reaction chamber of the process equipment. For example, in thin film deposition equipment, the heating pad serves as a wafer carrier and the lower electrode for radio frequency circuits, and its applications are very widespread.

[0003] However, because the heating plate has a connection point with the outside (support tube), a large amount of heat is easily transferred to the outside at this point, which reduces the temperature uniformity of the heating plate. Consequently, the heating wire at this point is subjected to a relatively large current for a long time, which can easily lead to damage.

[0004] To address this problem, existing technologies typically employ methods that involve applying higher heating temperatures, but this approach has drawbacks such as increased energy consumption and reduced heater lifespan. Summary of the Invention

[0005] This invention provides a method and heater for enhancing the temperature uniformity of a heating plate, and their applications, to solve the defect in the prior art where uneven heating plate temperature is caused by heat loss at the connection point of the heating plate, thereby achieving uniform heating plate temperature and increasing the service life of the heating wire at the connection point.

[0006] In a first aspect, the present invention provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and a support tube, wherein the thermal conductivity of the ceramic ring is less than 1 / 2 of that of aluminum nitride.

[0007] Aluminum nitride (ANT) possesses high thermal conductivity, electrical insulation, and a coefficient of thermal expansion similar to silicon, making it an ideal material for manufacturing components in semiconductor processing equipment. ANT heating plates can operate in complex environments such as vacuum, plasma, and chemical gases—common conditions in wafer fabrication. Therefore, ANT is currently the most commonly used material for heating plates. Due to its high thermal conductivity, the ANT heating plate can quickly transfer heat to the wafer, thereby improving production efficiency. Typically, the support tube and heating plate are made of essentially the same material—ANT ceramic. As mentioned earlier, the connection between the heating plate and the support tube creates a significant heat transfer point, reducing the temperature uniformity of the heating plate. This, in turn, causes the heating wire at the connection point to withstand high currents for extended periods, making it prone to damage.

[0008] This invention breaks with conventional improvement ideas by adding a ceramic material with significantly low thermal conductivity between the heating plate and the support tube, thereby reducing heat conduction and heat loss at the connection of the heating plate, thus enhancing the temperature uniformity of the heating plate.

[0009] Specifically, this invention has found that the thermal conductivity of the ceramic ring needs to be less than half that of aluminum nitride to help control the temperature difference between the edge and center of the heating plate within ±0.5℃. In some embodiments of this invention, the ceramic ring is made of ceramic materials such as alumina ceramic, zirconia ceramic, and silicon nitride ceramic, whose thermal conductivity is less than half that of aluminum nitride.

[0010] Meanwhile, the thickness of the ceramic ring is controlled between 0.5-1.5 mm. Optionally, the thickness of the ceramic ring can be 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, or 1.5 mm, or other values ​​within the above range, which are not limited here. This thickness is beneficial for a firm connection between the heating plate and the support tube, while also ensuring overall mechanical strength. When the thickness of the ceramic ring is less than 0.5 mm, the connection between the heating plate and the support tube may be weak. When the thickness of the ceramic ring is greater than 1.5 mm, it is not conducive to controlling the temperature difference between the edge and the center of the heating plate, resulting in an excessive temperature difference between the edge and the center of the heating plate, which in turn leads to increased heat loss.

[0011] According to the method for enhancing the temperature uniformity of the heating plate provided by the present invention, the ceramic ring and the heating plate, as well as the ceramic ring and the support tube, are welded together by glass solder. The glass solder, by weight, comprises: 40-70 parts aluminum nitride, 10-20 parts aluminum oxide, 3-5 parts yttrium oxide, 5-15 parts calcium oxide, 5-15 parts magnesium oxide, and 5-15 parts silicon oxide.

[0012] After determining the approach of adding ceramic rings, the key technical focus was on ensuring that the ceramic rings were securely and airtightly connected to the heating plate and support tube. This is because thin film deposition is mostly carried out in a vacuum environment, and poor airtightness will lead to the failure of thin film deposition and affect the deposition effect. Therefore, failure to meet the airtightness standard is completely unacceptable.

[0013] The present invention has found that when the glass solder with the above-mentioned formula is used, the above requirements can be met. Moreover, its sintering and curing temperature is low, so that the materials in the heating plate, such as the heating wire, which are sintered together with it, are protected from the effects of high temperature and prevent changes in performance.

[0014] More preferably, the glass solder, by weight, comprises: 50-70 parts aluminum nitride, 10-15 parts aluminum oxide, 4-5 parts yttrium oxide, 5-10 parts calcium oxide, 5-10 parts magnesium oxide, and 5-10 parts silicon oxide.

[0015] More preferably, the glass solder is composed of the following components by weight: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide.

[0016] Under the above formula, after the glass solder is sintered and cured, it can form a good weld with the connection between the heating plate and the support tube. As observed from the SEM image, there are almost no pores, that is, the airtightness is good.

[0017] In some embodiments of the present invention, the step of adding the ceramic ring includes: The components of the glass solder are mixed with alcohol and then ground and mixed. The ground material is applied to both sides of the ceramic ring, and then the two sides of the ceramic ring are connected and fixed to the heating plate and the support tube respectively by tooling fixtures. The fixed whole is sintered in a hot press furnace.

[0018] It should be noted that, if the complexity of the processing is not a concern, the ceramic ring can be welded to the heating plate and the support tube separately in stages. The order in which the heating plate and the support tube are welded has no substantial impact. In other words, the ceramic ring can be welded to the heating plate first and then to the support tube, or vice versa.

[0019] Furthermore, during the sintering process, a pressure of 1-5 MPa is applied, and the sintering temperature is 1300-1600℃. The applied pressure should not be too high, otherwise cracks and other defects may easily occur. The sintering temperature is 1300-1600℃, but optionally, it can be 1300℃, 1350℃, 1400℃, 1450℃, 1500℃, 1550℃, or 1600℃, or other values ​​within the above range. No limitation is made here. In some specific embodiments, the sintering temperature is 1400-1500℃, preferably 1450℃.

[0020] Further, the ratio of glass solder to alcohol is (8-12):7, and the D50 of the ground material does not exceed 0.5 micrometers. Optionally, the ratio of glass solder to alcohol can be 8:7, 9:7, 10:7, 11:7 or 12:7, etc., or other values ​​within the above range, which are not limited here, but preferably 10:7.

[0021] In the above technical solution, using alcohol as a grinding solvent can prevent aluminum nitride hydrolysis. At the same time, the solvent can evaporate faster during the later sintering process, and the dispersion effect is better than that of water. By controlling the material-liquid ratio within the above range, a grinding material with appropriate solid content can be obtained. When it is applied to the surface of the ceramic ring, it has appropriate fluidity and is conducive to forming a strong bond.

[0022] Furthermore, the coating thickness of the ground material is 100-200 μm.

[0023] In specific embodiments of the present invention, the coating method can be conventional coating methods such as brush coating or screen printing. The coating thickness can be any value within the above-mentioned range, specifically 100μm, 110μm, 120μm, 130μm, 140μm, 150μm, 160μm, 170μm, 180μm, 190μm, or 200μm, etc., or other values ​​within the above range, which are not limited here. It should be noted that the coating thickness is not necessarily equal to the thickness of the solder layer after final sintering and curing, because pressure is applied during sintering, and solder may be squeezed out, which is within a reasonable operating range. It is understood that after sintering and curing, excess solder at the weld joint can be removed by polishing or other finishing processes. Preferably, screen printing is used as the coating method, which helps to control the thickness and the flatness of the printed paste.

[0024] Secondly, the present invention provides a heater, including a heating plate and a support tube, wherein a ceramic ring is provided between the heating plate and the support tube, the thermal conductivity of the ceramic ring is less than 1 / 2 of that of aluminum nitride, and the thickness of the ceramic ring is 0.5-1.5 mm.

[0025] The heater provided by this invention reduces heat conduction and heat loss at the connection point of the heating plate by adding a ceramic material with significantly low thermal conductivity between the heating plate and the support tube, resulting in better temperature uniformity of the heating plate. The temperature difference between the edge and center of the heating plate described in this invention is controlled within ±0.5℃.

[0026] The heating plate of this invention has good temperature uniformity. On the one hand, it enhances the service life of the heating wire at the connection point. On the other hand, the heating plate provides a more uniform heating temperature, which results in better heating uniformity and stability of the wafer, and the quality of the obtained wafer is better, which is beneficial to the performance and reliability of the final product.

[0027] According to the heater provided by the present invention, a solder layer is provided between the ceramic ring and the heating plate, and between the ceramic ring and the support tube, wherein the thickness of the solder layer is less than 200 μm.

[0028] Specifically, by weight, the solder used in the solder layer consists of: 40-70 parts aluminum nitride, 10-20 parts aluminum oxide, 3-5 parts yttrium oxide, 5-15 parts calcium oxide, 5-15 parts magnesium oxide, and 5-15 parts silicon oxide.

[0029] The choice of solder layer material is crucial to ensuring a strong and airtight connection between the ceramic ring, the heating plate, and the support tube. This invention has found that using the solder with the above-mentioned formula meets these requirements. Furthermore, its lower sintering and curing temperature prevents materials in the heating plate, such as the heating wire, from being affected by high temperatures during sintering, thus preventing performance changes.

[0030] More preferably, by weight, the solder used in the solder layer comprises: 50-70 parts aluminum nitride, 10-15 parts aluminum oxide, 4-5 parts yttrium oxide, 5-10 parts calcium oxide, 5-10 parts magnesium oxide, and 5-10 parts silicon oxide.

[0031] More preferably, by weight, the solder used in the solder layer consists of: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide.

[0032] In some embodiments of the present invention, the airtightness of the solder layer is not higher than 1*10. -10 Pa·m 3 / s.

[0033] In some embodiments of the present invention, the material composition of the support tube is aluminum nitride, zirconium oxide, yttrium oxide, and a binder. Based on the weight of aluminum nitride, the amount of zirconium oxide added is 0.5-5 wt%, and the particle size is 3-5 micrometers. Optionally, the amount of zirconium oxide added can be 0.5 wt%, 1 wt%, 1.5 wt%, 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt%, 4 wt%, 4.5 wt%, or 5 wt%, etc., or other values ​​within the above range, which are not limited here. The particle size of the zirconium oxide can be 3 micrometers, 3.5 micrometers, 4 micrometers, 4.5 micrometers, or 5 micrometers, etc., or other values ​​within the above range, which are not limited here.

[0034] This invention, by adding zirconium oxide to the support tube, utilizes the microcrack toughening mechanism to increase the flexural strength of the aluminum nitride support tube from 300-400 MPa to 500-600 MPa, significantly increasing its fracture toughness and greatly reducing the possibility of breakage. However, the amount added needs to be controlled; otherwise, excessive addition can lead to product cracking and a significant decrease in thermal conductivity due to microcracks. In some embodiments of this invention, the amount of zirconium oxide added is 3-5 wt%, with a particle size of 3-4 micrometers. In some preferred embodiments of this invention, the amount of zirconium oxide added is 4 wt%, with a particle size of 3 micrometers.

[0035] This invention investigated the effect of zirconium oxide addition on the flexural strength of aluminum nitride ceramics, and the results are shown in Table 1. The effect of zirconium oxide particle size on the flexural strength of aluminum nitride ceramics was also investigated, and the results are shown in Table 2.

[0036] Table 1

[0037] Table 2

[0038] The support tube of the present invention can be prepared by the following method: Zirconia (ZrO2) powder and yttrium oxide (Y2O3) powder were added to the aluminum nitride powder required for the preparation of the support tube. The mixture was then ball-milled and mixed evenly in a solvent of anhydrous ethanol and butanone. Finally, a binder was added and mixed evenly. The prepared solution was processed by spray granulation to obtain powder with good sphericity. After the granulated powder is molded to achieve a certain density and strength, it is taken out and placed in a cold isostatic pressing mold for cold isostatic pressing to further improve its density. After pressing, the density reaches the standard (density reaches 3.3475 g / cm³). 3 Organic matter was removed from the green body (60% of which was used), and the glue was removed by holding it at 400℃ for 6-12 hours under a nitrogen atmosphere according to the set temperature curve. The support tube is obtained by sintering the sample after the above glue removal is completed at a temperature range of 1750℃-1850℃ for 2-5 hours.

[0039] Thirdly, the present invention provides a thin film deposition apparatus, including the heater described above.

[0040] This invention provides a method and heater for enhancing the temperature uniformity of a heating plate, and their applications. By adding a ceramic material with significantly low thermal conductivity between the heating plate and the support tube, heat conduction is reduced, thus minimizing heat loss at the heating plate connection. This enhances the temperature uniformity of the heating plate, thereby increasing the lifespan of the heating wire at the connection and improving the quality of the wafer and ultimately the final product. The method of this invention provides excellent technical support for semiconductor processing. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of the heater provided by the present invention.

[0042] Figure 2 This is a schematic diagram of the welding process provided by the present invention.

[0043] Figure 3 This is a SEM image of the heating plate and solder layer provided in Embodiment 1 of the present invention.

[0044] Figure 4 This is a SEM image of the heating plate and solder layer provided in Embodiment 2 of the present invention.

[0045] Figure 5 This is a SEM image of the heating plate and solder layer provided in Embodiment 3 of the present invention.

[0046] In the diagram, 11: heating plate; 12: ceramic ring; 13: support tube. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0048] Where specific techniques or conditions are not specified in the examples, they shall be performed in accordance with the techniques or conditions described in the literature in this field, or in accordance with the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased through legitimate channels.

[0049] Example 1 This embodiment provides a heater, the structural schematic diagram of which is shown below. Figure 1 As shown, it includes a heating plate 11 and a support tube 13. A ceramic ring 12 is provided between the heating plate 11 and the support tube 13. The thermal conductivity of the ceramic ring 12 is less than 1 / 2 of that of aluminum nitride. The thickness of the ceramic ring 12 is 1 mm.

[0050] Specifically, in this embodiment, the ceramic ring 12 is made of alumina ceramic, which has a thermal conductivity of 53 W / (m·K).

[0051] Accordingly, this embodiment provides a method for enhancing the temperature uniformity of the heating plate, including: adding a ceramic ring 12 between the heating plate 11 and the support tube 13, wherein the thermal conductivity of the ceramic ring 12 is less than 1 / 2 of that of aluminum nitride, and the thickness of the ceramic ring 12 is 1 mm.

[0052] The ceramic ring 12 is welded to the heating plate 11, and the ceramic ring 12 is welded to the support tube 13 by glass solder. The glass solder is composed of 50 parts aluminum nitride, 15 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide and 10 parts silicon oxide by weight.

[0053] The specific welding process is as follows: The components of the glass solder are mixed with alcohol in a ball mill jar and ground; the material-to-liquid ratio is 10:7, and the D50 of the ground material does not exceed 0.5 micrometers; The ground material is printed onto both sides of the ceramic ring 12, with a thickness of 150 μm. Then, using tooling, the two sides of the ceramic ring 12 are connected and fixed to the heating plate 11 and the support tube 13, respectively. The fixed assembly is then sintered in a hot press furnace. During sintering, a pressure of 1-5 MPa is applied, the sintering temperature is 1450℃, and the holding time is 1 hour. A schematic diagram of the welding process is shown below. Figure 2 As shown.

[0054] Specifically, in this embodiment, the material composition of the support tube 13 is aluminum nitride, zirconium oxide, yttrium oxide and binder, wherein the amount of zirconium oxide added is 4wt% with a particle size of 3μm, the amount of yttrium oxide added is 5wt%, the amount of binder added is 2wt%, and the remainder is aluminum nitride.

[0055] The preparation method of the support tube 13 is as follows: Zirconia powder and yttrium oxide powder were added to the aluminum nitride powder required for preparing the support tube 13. The mixture was then ball-milled and mixed evenly in a solvent of anhydrous ethanol and butanone (the ratio of anhydrous ethanol to butanone was 1:1.17). Finally, a binder was added and mixed evenly. The prepared solution was processed by spray granulation to obtain powder with good sphericity. After the granulated powder is molded to achieve a certain density and strength, it is taken out and placed in a cold isostatic pressing mold for cold isostatic pressing to further improve its density. After pressing, the green body with the required density is removed of organic matter, and the glue is removed by holding it at 400℃ for 6-12 hours under a nitrogen atmosphere according to the set temperature curve. The sample with the above-mentioned glue removal completed was sintered at a temperature range of 1750℃-1850℃ for 2-5 hours to obtain the support tube 13.

[0056] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.83*10. -11 Pa·m 3 / s. SEM image of the connection between the solder layer and the heating plate is shown below. Figure 3 As shown in the figure, the solder layer has distinct grains and is tightly bonded to the heating plate without any obvious gaps.

[0057] The temperature difference between the edge and center of the heating plate, measured using TC WAFER technology, is within ±0.41℃.

[0058] Example 2 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube, wherein the thermal conductivity of the ceramic ring is less than 1 / 2 that of aluminum nitride, and the thickness of the ceramic ring is 1 mm. The material selection of the ceramic ring is the same as in Embodiment 1.

[0059] The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide. The specific welding process is the same as in Example 1.

[0060] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.96*10. -11 Pa·m 3 / s. SEM image of the connection between the solder layer and the heating plate is shown below. Figure 4 As shown in the figure, the solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0061] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.43℃.

[0062] Example 3 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube, wherein the thermal conductivity of the ceramic ring is less than 1 / 2 that of aluminum nitride, and the thickness of the ceramic ring is 1 mm. The material selection of the ceramic ring is the same as in Embodiment 1.

[0063] The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 70 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 5 parts calcium oxide, 5 parts magnesium oxide, and 5 parts silicon oxide. The specific welding process is the same as in Example 1.

[0064] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.83*10. -11 Pa·m 3 / s. SEM image of the connection between the solder layer and the heating plate is shown below. Figure 5 As shown in the figure, the solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0065] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.43℃.

[0066] Example 4 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube, wherein the thermal conductivity of the ceramic ring is less than 1 / 2 that of aluminum nitride, and the thickness of the ceramic ring is 1 mm. The material selection of the ceramic ring is the same as in Embodiment 1.

[0067] The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 40 parts aluminum nitride, 20 parts aluminum oxide, 3 parts yttrium oxide, 15 parts calcium oxide, 15 parts magnesium oxide, and 15 parts silicon oxide. The specific welding process is the same as in Example 1.

[0068] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.89*10. -11 Pa·m 3 / s. The solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0069] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.46℃.

[0070] Example 5 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube, wherein the thermal conductivity of the ceramic ring is less than half that of aluminum nitride, and the thickness of the ceramic ring is 1 mm. The ceramic ring is made of zirconium oxide, with a thermal conductivity of 5 W / (m·K). The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide. The specific welding process is the same as in Example 1.

[0071] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.93*10. -11 Pa·m 3 / s. The solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0072] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.37℃.

[0073] Example 6 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube. The ceramic ring has a thermal conductivity less than half that of aluminum nitride, and its thickness is 1 mm. The ceramic ring is made of silicon nitride, with a thermal conductivity of approximately 40 W / (m·K). The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide. The specific welding process is the same as in Example 1.

[0074] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.96*10. -11 Pa·m 3 / s. The solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0075] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.42℃.

[0076] Example 7 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube, wherein the thermal conductivity of the ceramic ring is less than 1 / 2 that of aluminum nitride, and the thickness of the ceramic ring is 0.5 mm. The material selection of the ceramic ring is the same as in Embodiment 1.

[0077] The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide. The specific welding process is the same as in Example 1.

[0078] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.96*10. -11 Pa·m 3 / s. The solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0079] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.49℃.

[0080] Example 8 This embodiment provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring between the heating plate and the support tube, wherein the thermal conductivity of the ceramic ring is less than 1 / 2 that of aluminum nitride, and the thickness of the ceramic ring is 1.5 mm. The material selection of the ceramic ring is the same as in Embodiment 1.

[0081] The ceramic ring is welded to the heating plate and to the support tube using glass solder, which, by weight, consists of: 60 parts aluminum nitride, 10 parts aluminum oxide, 5 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide, and 5 parts silicon oxide. The specific welding process is the same as in Example 1.

[0082] The heater obtained in this embodiment was tested, and the airtightness of the solder layer was 0.89*10. -11 Pa·m 3 / s. The solder layer is tightly bonded to the heating plate, with no obvious gaps.

[0083] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.41℃.

[0084] Comparative Example 1 The solder formula in Example 1 was selected and printed on both sides of the aluminum nitride ceramic ring with a thickness of 150 μm. Then, the two sides of the ceramic ring 12 were connected and fixed to the heating plate 11 and the support tube 13 respectively by tooling. The fixed whole was sintered in a hot press furnace. During the sintering process, a pressure of 1-5 MPa was applied and the sintering temperature was 1450℃, and the temperature was held for 1 hour.

[0085] The heater obtained in the comparative experiment was tested, and the airtightness of the solder layer was 0.93*10. -11 Pa·m 3 / s.

[0086] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be more than ±1.2℃. This does not meet the usage requirements.

[0087] Comparative Example 2 The same process as in Example 1 was used, but the solder consisted of 80 parts aluminum nitride, 15 parts aluminum oxide, and 5 parts yttrium oxide.

[0088] The heater obtained in the comparative example was tested, and the airtightness of the solder layer was 0.54*10. -9 Pa·m 3 / s.

[0089] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be more than ±1.5℃. Its temperature uniformity and airtightness do not meet the usage requirements.

[0090] Comparative Example 3 This comparative example provides a method for enhancing the temperature uniformity of a heating plate, comprising: adding a ceramic ring 12 between the heating plate 11 and the support tube 13, wherein the thermal conductivity of the ceramic ring 12 is less than 1 / 2 of that of aluminum nitride, and the thickness of the ceramic ring 12 is 1 mm.

[0091] The ceramic ring 12 is welded to the heating plate 11 and to the support tube 13 by means of glass solder. The glass solder is composed of 30 parts aluminum nitride, 30 parts aluminum oxide, 10 parts yttrium oxide, 10 parts calcium oxide, 10 parts magnesium oxide and 10 parts silicon oxide by weight.

[0092] The heater obtained in the comparative example was tested, and the airtightness of the solder layer was 0.98*10. -11 Pa·m 3 / s.

[0093] Using TC WAFER technology, the temperature difference between the edge and center of the heating plate was measured to be within ±0.47℃. While its temperature uniformity and airtightness meet the usage requirements, its welding strength is too low, making it extremely prone to cracking at the weld joints during use.

[0094] It should be noted that the endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0095] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "detailed implementation," or "some specific implementations," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for enhancing the temperature uniformity of a heating plate, characterized in that, include: A ceramic ring is added between the heating plate and the support tube. The thermal conductivity of the ceramic ring is less than 1 / 2 of that of aluminum nitride.

2. The method for enhancing the temperature uniformity of a heating plate according to claim 1, characterized in that, The ceramic ring comprises alumina ceramic, zirconia ceramic, or silicon nitride ceramic; and / or, the thickness of the ceramic ring is 0.5-1.5 mm.

3. The method for enhancing the temperature uniformity of a heating plate according to claim 1, characterized in that, The ceramic ring is welded to the heating plate and to the support tube by glass solder. The glass solder is composed of: 40-70 parts aluminum nitride, 10-20 parts aluminum oxide, 3-5 parts yttrium oxide, 5-15 parts calcium oxide, 5-15 parts magnesium oxide and 5-15 parts silicon oxide by weight. Preferably, the glass solder is composed of the following components by weight: 50-70 parts aluminum nitride, 10-15 parts aluminum oxide, 4-5 parts yttrium oxide, 5-10 parts calcium oxide, 5-10 parts magnesium oxide, and 5-10 parts silicon oxide.

4. The method for enhancing the temperature uniformity of a heating plate according to claim 3, characterized in that, The steps for adding the ceramic ring include: The components of the glass solder are mixed with alcohol and then ground and mixed. The ground material is applied to both sides of the ceramic ring, and then the two sides of the ceramic ring are connected and fixed to the heating plate and the support tube respectively by tooling fixtures. The fixed whole is sintered in a hot press furnace.

5. The method for enhancing the temperature uniformity of a heating plate according to claim 4, characterized in that, During the sintering process, a pressure of 1-5 MPa is applied and the sintering temperature is 1300-1600℃. And / or, the ratio of glass solder to alcohol is (8-12):7, and the D50 of the ground material does not exceed 0.5 micrometers; And / or, the coating thickness of the ground material is 100-200 μm.

6. A heater, characterized in that, It includes a heating plate and a support tube, with a ceramic ring between the heating plate and the support tube. The thermal conductivity of the ceramic ring is less than 1 / 2 of that of aluminum nitride.

7. The heater according to claim 6, characterized in that, A solder layer is provided between the ceramic ring and the heating plate, and between the ceramic ring and the support tube, wherein the thickness of the solder layer is less than 200 μm; and / or, the thickness of the ceramic ring is 0.5-1.5 mm. Preferably, the airtightness of the solder layer is not higher than 1*10. -10 Pa·m 3 / s; Preferably, the solder used in the solder layer has the following composition: 40-70 parts aluminum nitride, 10-20 parts aluminum oxide, 3-5 parts yttrium oxide, 5-15 parts calcium oxide, 5-15 parts magnesium oxide, and 5-15 parts silicon oxide. Preferably, by weight, the solder used in the solder layer is composed of: 50-70 parts aluminum nitride, 10-15 parts aluminum oxide, 4-5 parts yttrium oxide, 5-10 parts calcium oxide, 5-10 parts magnesium oxide and 5-10 parts silicon oxide.

8. The heater according to claim 6, characterized in that, The material composition of the support tube includes aluminum nitride, zirconium oxide, yttrium oxide and binder; the amount of zirconium oxide added is 0.5-5 wt% based on the weight of aluminum nitride; the particle size of the zirconium oxide is 3-5 micrometers.

9. The heater according to any one of claims 6-8, characterized in that, The temperature difference between the edge and center of the heating plate is controlled within ±0.5℃.

10. A thin film deposition apparatus, characterized in that, Includes the heater as described in any one of claims 6-8.

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